JP2001010064A - Production of ink-jet printer head - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a production method of an ink-jet head, capable of forming a large number of ink ejecting nozzles with a correct shape in an orifice plate collectively and homogeneously in a short time. SOLUTION: After a sticking a film for the communication prevention to the rear surface of a substrate, it is placed on a water fixing stage 62 of a helicon wave etching device. While circulating an anti-freezing liquid from a supporting base 63 into the wafer-fixing stage 62 by a low temperature circulator 65, a coolant gas 66 for promoting the heat conduction is sent into a minute gap (h) generated between the wafer fixing stage 62 and the substrate by a coolant sending pump 67. By the constitution, temperature rise of the substrate is restrained effectively at the time of helicon wave dry etching. Since the film for the communication prevention to the substrate rear surface prevents upward blowout of the coolant gas 66 from an ink ejection nozzle 44 when the ink ejection nozzle 44 is formed so as to maintain the cooling state of the substrate, overetching operation can be continued in this state to finish the formed hole into a desired correct shape.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a manufacturing method capable of collectively forming ink discharge nozzles having a correct shape on an orifice plate of an ink jet print head in a short time.

[0002]

2. Description of the Related Art In recent years, ink jet printers have been widely used. Ink jet printers include a thermal method in which ink is heated to generate air bubbles to eject ink droplets under the pressure, and a piezo method in which ink droplets are ejected by deformation of a piezoresistive element (piezoelectric element). In these methods, printing is performed by directly ejecting ink, which is a color material, as ink droplets onto recording paper, and printing energy is lower than that of an electrophotographic method using toner which is a powdery printing material. It is easy to colorize by mixing, and the print dots can be made small, so that high image quality can be obtained, the amount of ink used for printing is not wasted, and the cost performance is excellent. Therefore, it is widely used especially as a personal printer. Printing method.

The above-mentioned thermal system has two configurations depending on the ejection direction of ink droplets. One type is called a side shooter type, which discharges ink droplets in a direction parallel to the heat generating surface of the heating element, and the other discharges ink droplets in a direction perpendicular to the heat generating surface of the heat generating element. This is called a roof shooter type.

FIG. 15A is a perspective view schematically showing a configuration of a printer having such a roof shooter type ink jet printer head, and FIG. 15B is a perspective view showing the ink ejection of the ink jet printer head. FIG. 3C is a plan view schematically showing the surface, FIG. 3C is a sectional view taken along the line DD ′, and FIG. 3C is a view showing a silicon wafer on which the inkjet printer head is manufactured.

First, a printer 1 shown in FIG. 1A is a small printer used personally at home, and an ink jet printer head 3 for executing printing on a carriage 2.
And an ink cartridge 4 containing ink. The carriage 2 is slidably supported on one side by a guide rail 5 and is fixed to a toothed drive belt 6 on the other hand. As a result, the ink jet printer head 3 and the ink tank 4 move in the direction indicated by the double-headed arrow B in the figure.
Are driven back and forth in the main scanning direction of the printing indicated by. A flexible communication cable 7 is connected between the inkjet printer head 3 and a control device (not shown) of the printer 1 main body, and print data and control signals are sent from the control device to the inkjet printer head 3 via the flexible communication cable 7. Is done.

A platen 9 is provided at the lower end of a frame 8 of the apparatus main body so as to face the ink jet printer head 3 and extend in the main scanning direction of the ink jet printer head 3. The paper 1 contacts the platen 9
0 is indicated by arrow C in FIG.
Are intermittently conveyed in the print sub-scanning direction indicated by. This paper 10
While the intermittent conveyance is stopped, the ink jet printer head 3 ejects ink droplets in the state of being close to the paper 10 and prints on the paper surface while being driven by the motor 13 via the toothed drive belt 6 and the carriage 2. . Printing is performed on the entire surface of the paper 10 by repeating this intermittent conveyance of the paper 10 and printing during reciprocation by the inkjet printer head 3.

[0007] Monochrome printers have been the mainstream in the past, but full-color printers have become the mainstream in recent years. The above-described ink jet printer head 3 used for a full color printer is shown in FIG.
As shown in FIG. 5, four nozzle rows 16 in parallel with each other for discharging four colors of ink are formed on an orifice plate 15 laminated on a chip substrate 14 having a size of about 10 × 15 mm. . Each nozzle row 16 has, for example, 12
Eight orifices, that is, ink ejection nozzles 17 are arranged in a line.

As a method of manufacturing the ink jet printer head, a plurality of heating elements, a driving circuit for individually driving the heating elements, and ink discharge nozzles are integrally and monolithically formed by utilizing a silicon LSI forming technique and a thin film forming technique. There is a way to do that. According to this method, a 10 × 15 mm chip substrate 14 shown in FIG.
As shown in (c), the 128 ink discharge nozzles 1
Thus, the inkjet printer head 3 having a resolution of 360 dpi (dots / inch) in which the heating elements 18 and the driving circuits 19 corresponding to 7 are formed can be produced. If the resolution is 720 dpi, 256 heating elements, drive circuits, and ink ejection nozzles will be formed.

Such an ink jet printer head 3 is manufactured by forming a large number on a silicon wafer 21 shown in FIG. Silicon wafer 21
On each of the chip substrates 14 which are individually partitioned by a predetermined number above, in addition to the ink discharge nozzles 17, the heating elements 18, the driving circuits 19, and the like, individual wiring electrodes 22 for individually driving the heating elements 18 and A common electrode 23, wiring terminals 24 and power supply terminals 25 for these, partition walls 27 for forming ink flow paths 26, and ink receiving holes 28 for receiving ink supplied from an external ink cartridge 4 to the ink flow paths 26
And a common ink supply groove 29 and the like.

The ink jet printer head 3 having the respective parts formed in the state of the silicon wafer 21 is finally cut along a scribe line by using a dicing saw or the like, and is divided into individual parts. Bonding and terminal connection complete the ink jet printer head 3 in practical units.

This ink jet printer head 3 is
At the time of printing, the heating element 18 is selectively energized in accordance with the printing information, instantaneously generates heat to cause a film boiling phenomenon, and ink droplets are ejected from the ink ejection nozzle 17 corresponding to the heating element 18. In such an ink jet printer head 3, ink droplets are ejected in a substantially spherical shape having a size corresponding to the diameter of the ink ejection nozzle 17, and are printed on the paper surface with a diameter approximately twice as large.

[0012]

In order to form the ink discharge nozzles 17 in the orifice plate 15 on each of the chip substrates 14, the orifice plate 15 must be made of Al or Ni.
Alternatively, after laminating a metal film of Cu or the like, the metal film is patterned, and the orifice plate 15 is selectively etched by a normal dry etching apparatus or an excimer laser using the patterned metal film as a mask.

However, it is required that the ink discharge nozzles 17 be accurately formed at predetermined positions and in a predetermined size and shape. However, a large number of the ink discharge nozzles 17 are collectively and appropriately formed on the thick orifice plate 15. Since it is difficult to open the holes, conventionally, holes have been made by dividing the holes into appropriate numbers. For this reason, there is a problem that it takes time to form a hole in the ink discharge nozzle 17.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned conventional circumstances,
An object of the present invention is to provide a method of manufacturing an ink jet printer head in which a large number of ink ejection nozzles having a correct shape are collectively and properly vacated in an orifice plate in a short time.

[0015]

According to a first aspect of the present invention, there is provided a method of manufacturing an ink jet printer head, comprising applying pressure to ink and ejecting the ink from a plurality of ejection nozzles onto a recording medium to perform recording. In the method of manufacturing a printer head, a step of installing a partition partitioning a plurality of ink flow paths on the surface of the substrate and a pressure energy generating element provided for each of the ink flow paths, and setting a gap between the back surface and the front surface of the substrate. A step of forming a penetrating ink supply path, a step of shielding a flow path from the back surface of the substrate to the ink flow path via the ink supply path, and a step of forming the discharge nozzle on the surface of the substrate Installing the orifice plate, and positioning the plurality of discharge nozzles on the orifice plate at a predetermined position while cooling the back surface of the substrate with a cooling medium gas interposed therebetween. A step of collectively formed by dry etching, and has a step of releasing the blocking of the distribution channel.

[0016] The shielding step of the distribution channel is preferably performed by attaching a shielding sheet to the back surface of the substrate, for example, as described in claim 2. It is also possible to fill the inside with a soluble resin that is easily dissolved by a solvent or water. In this case, the soluble resin preferably covers the pressure energy generating element, for example.

Next, according to a fifth aspect of the present invention, there is provided a method of manufacturing an ink-jet printer head which applies pressure to ink to eject the ink from a plurality of discharge nozzles onto a printing medium to perform printing. In the step of installing a partition partitioning a plurality of ink flow paths on the surface of the substrate and a pressure energy generating element provided for each ink flow path, and forming an ink supply groove on the surface of the substrate Placing the orifice plate on which the discharge nozzle is to be formed on the surface of the substrate, and placing the plurality of discharge nozzles on the orifice plate at predetermined positions while cooling the back surface of the substrate with a cooling medium gas interposed therebetween. The method includes a step of performing batch formation by dry etching and a step of forming an ink receiving hole communicating with the ink supply groove on the back side of the substrate. Composed of Te.

Further, according to a sixth aspect of the present invention, there is provided a method of manufacturing an ink jet printer head which applies pressure to ink and ejects the ink from a plurality of ejection nozzles onto a recording medium to perform printing. Installing a partition partitioning a plurality of ink flow paths on the surface of the substrate and pressure energy generating elements provided for each of the ink flow paths, and forming an ink supply path penetrating from the back surface of the substrate to the surface. And a step of installing an orifice plate on which the discharge nozzle is to be formed on the surface of the substrate, and starting supply of a cooling medium gas to the back side of the substrate, and interposing the gas with the substrate. During the cooling, dry etching for forming the plurality of discharge nozzles at predetermined positions on the orifice plate was started, and the discharge nozzles penetrated. The supply of the cooling medium gas is stopped immediately after qualitative, thereafter, constructed and a dry etching process to terminate dry etching after a predetermined time.

[0019]

Embodiments of the present invention will be described below with reference to the drawings. FIGS. 1A, 1B, and 1C are diagrams showing a method of manufacturing a monolithic ink jet printer head according to the first embodiment in the order of steps. FIG. 1 schematically shows a schematic plan view and a cross-sectional view of a formed state. In these figures, for convenience of explanation, one of the ink jet printer heads for full color is shown.
Although only a plurality of print heads (the same as the configuration of the monochrome inkjet printer head) are shown, actually, as described later, a plurality of such print heads (usually four print heads) are provided.
) Are formed on one chip substrate. FIG. 3 (c) shows the ink ejection nozzles 44 as 36 orifices.
, 128, 256, etc., depending on the design policy.

FIGS. 2 (a), (b) and (c) are shown in FIG. 1 (a), (b) and
The plan view of (c) is shown in an enlarged manner in detail, and the middle section is a sectional view taken along the line EE 'of the upper section (see FIG. 3 (a)), and the lower section is a sectional view taken along the line FF' of the upper line. (See FIG. 3A). In addition, the cross-sectional views shown in the middle part of the figures (a), (b), (c) are:
These are the same as the cross-sectional views shown below FIGS. 1 (a), (b) and (c), respectively. 2 (a), 2 (b) and 2 (c), for convenience of illustration, 64, 128 or 256 ink ejection nozzles are represented by five ink ejection nozzles 44. Is shown.

First, a basic manufacturing method will be described. First, as a step 1, a drive circuit and its terminals are formed on a silicon substrate of 4 inches or more by an LSI forming process, and an oxide film (SiO ₂ ) having a thickness of 1 to 2 μm is formed. Using a thin film forming technique, a heating resistor film layer made of tantalum (Ta) -silicon (Si) -oxygen (O) and an electrode film made of Au or the like are sequentially interposed with an adhesion layer made of Ti-W or the like interposed therebetween. Lamination is formed. Then, the electrode film and the heating resistor film are respectively patterned by photolithography technology, and wiring electrodes are formed on both sides of a region serving as a heating portion on the stripe-shaped heating resistor film. In this step, the position of the heat generating portion is determined.

FIGS. 1 (a) and 2 (a) show a state immediately after the above steps 1 and 2 are completed. That is, a drive circuit 31 and drive circuit terminals 32 (see FIG. 1A) are formed below an insulating layer made of an oxide film on the chip substrate 30, and a plurality of heating resistor layers are formed on the insulating layer. And a common electrode 34 at both ends of the heat generating portion 33.
And a plurality of heating elements including the common electrode 34, the heating section 33, and the individual wiring electrodes 36 are formed in parallel at predetermined intervals in parallel, and the heating section row 33 ′ and the individual wiring electrodes are formed. A row 36 'is formed. A common electrode power supply terminal 35 is formed on the common electrode 34 (see FIG. 1A).

Subsequently, in step 3, the individual heat generating parts 33
After forming a partition member made of an organic material such as photosensitive polyimide to a height of about 20 μm by coating to form an ink pressurizing chamber corresponding to the above and an ink flow path to these, after patterning this by photolithography technology, 300
Curing (dry curing, baking) by applying heat at a temperature of 400C to 400C for 30 minutes to 60 minutes is performed to form and fix the partition walls made of the photosensitive polyimide having a height of about 10 m on the chip substrate 30. Further, as step 4, a common ink supply groove is formed in the surface of the chip substrate 30 by wet etching or sand blasting, and an ink receiving hole communicating with the common ink supply groove and opening on the lower surface of the chip substrate 30 is formed. Form.

FIGS. 1 (b) and 2 (b) show a state immediately after the steps 3 and 4 are completed. That is, the common ink supply groove 37 and the ink receiving hole 38 are formed so as to be surrounded by the common electrode 34. An ink seal partition 39-1 is formed in a portion of the common electrode 34 located on the left side of the common ink supply groove 37, and an ink seal partition 39-2 is formed in a portion where the individual wiring electrode 36 on the right side is provided. Are formed, and a partition wall 39-3 extending from the ink seal partition wall 39-2 to between the heat generating sections 33 and the heat generating sections 33 is formed.

If the ink seal partition wall 39-2 on the individual wiring electrode 36 is a comb body, the partition partition wall 39-3 extending between the heat generating portions 33 corresponds to the teeth of the comb. Shape. Accordingly, the fine ink pressurizing chamber 4 in which the heat generating portion 33 is located at the base between the teeth, with the comb-shaped partition wall 39-3 of the comb serving as a partition wall.
1 is formed by the number of heat generating parts 33.

Then, in step 5, an orifice plate of a film of polyimide having a thickness of 10 to 30 μm is placed on the uppermost layer of the laminated structure, that is, the partition wall 39 (39-1, 39-39).
2, 39-3) and pressurize while heating at 290 to 300 ° C. to fix the orifice plate. Subsequently, a metal film such as Ni, Cu, or Al having a thickness of about 0.6 to 1 μm is formed.

Further, in step 6, the metal film on the orifice plate is patterned to form a mask for selectively etching the polyimide. Subsequently, the orifice plate is formed by a helicon wave etching apparatus described later in detail. According to the metal film mask, holes of 31 μm to 15 μm φ are formed, and a large number of ink discharge nozzles are collectively formed.

FIGS. 1 (c) and 2 (c) show the process 5 described above.
And the state immediately after the end of step 6. That is, the orifice plate 42 covers the entire area except for the common power supply terminal 35 and the drive circuit terminal 32, and
An ink pressurizing chamber 41 having a height of 10 μm formed by 9-3 has an opening facing the common ink supply groove 37. In addition, an ink flow path 43 having a height of 10 μm is formed to communicate the opening of the ink pressurizing chamber 41 with the common ink supply groove 37.

The orifice plate 42 has a heat generating portion 3
An orifice, that is, an ink discharge nozzle 44, is formed in a portion facing 3. Thereby, 64, 128
A monochromatic inkjet printer head 45 having one or 256 ink ejection nozzles 44 in one row is completed.

As described above, one row of the ink discharge nozzles 44
Color ink jet printer head 45 provided with
Is a configuration of an inkjet printer head for monochrome. Usually, in full-color printing, the three primary colors of subtractive color mixing, namely yellow (Y), magenta (M), and cyan (C), and black of characters and images are used. A total of four colors of ink are required by adding black (Bk) dedicated to the portion.
Therefore, at least four nozzle rows are required.

FIG. 3A is a diagram showing a state in which a full-color ink-jet printer head is constructed by arranging the above-described mono-color ink-jet printer heads 45 in four rows, and FIG. FIG. 4 is a diagram showing a state where a large number are formed on a wafer. According to the above-described manufacturing method, as shown in FIG. 3B, the chip substrate 46 set to be larger than the chip substrate 30 shown in FIG. 1A, FIG.
7 are formed on the chip substrate 46, and the mono-color ink jet printer head 45 shown in FIG. 1C is monolithically formed in four rows on the chip substrate 46, and as shown in FIG. The head 48 can be manufactured, and the positional relationship between the nozzle rows 49 can be accurately arranged by today's semiconductor manufacturing technology.

After the silicon wafer 47 is processed in the above-described manufacturing process, the silicon wafer 47 is finally cut along a scribe line using a dicing saw or the like, and is divided into individual chip substrates 46. Thus, a full-color ink jet printer head 48 shown in FIG. This is die-bonded to a mounting substrate, and terminals are connected to complete a full-color inkjet printer head 48 in practical units.

Next, the piercing of the ink discharge nozzle by the helicon wave etching apparatus, which has been schematically described in Step 6 of the above-described method for manufacturing an ink jet printer head, will be described in more detail. The helicon wave dry etching apparatus is used in this example because the helicon wave dry etching apparatus can perform high-speed dry etching and increase work efficiency. The helicon wave is a type of electromagnetic wave that propagates in solid plasma, and is also called a Heusler (whistle) wave, and generates high-density plasma.

FIG. 4A shows an ink jet print head 48 in the process of manufacturing which has been subjected to the above-described pre-process for dry etching (however, hereinafter, for a pressure energy generating element, one heating section 33 and its vicinity are shown). FIG. 2B is a diagram showing a state in which the helicon wave dry etching device is performing dry etching on the ink jet print head 48. 1A, FIG. 1A, FIG. 1B, FIG. 2C and FIG.
1 (a), (b), (c) and 2 (a), (b), (c) are assigned the same reference numerals as in (b) and (c). ing.

As shown in FIG. 3A, the orifice plate 42
Are adhesive 51a, polyimide film 52, adhesive 5
1b. Adhesives 51a and 51b
Is, for example, a thermoplastic polyimide or an epoxy-based adhesive, and a polyimide film 5 having a thickness of about 30 μm.
2 is coated on the front and back to a thickness of about 2 to 5 μm. When the temperature of the thermoplastic material such as the adhesive material 51a or 51b becomes higher than the glass transition point, the elastic modulus sharply decreases, the tackiness increases, and the adhesive effect is exhibited.

However, this property is the same as that of the partition wall 39 (39-1,
This is a property required for the adhesive material 51b on the back surface of the orifice plate 42 to be bonded to 39-2, 39-3), and is not necessary for the surface of the orifice plate 42. Nevertheless, the adhesive 51a is provided not only on the back surface of the orifice plate 42 but also on the front surface. This is because it is wound up inside and is in a bad condition. As shown in FIG.
By making the front and back surfaces have the same thermal expansion characteristics by 1b, the problem that the polyimide film 52 is rolled up during the processing operation in the manufacturing process is prevented.

The orifice plate 42 is bonded to the
With the surface of the material 51b facing the chip substrate 46, the partition 39 (39
-1, 39-2, 39-3), and
A lid is formed in the pressure chamber 41 and the ink flow path 43, and this orifice is formed.
In order to uniformly fix and adhere the plate 42 to the partition 39,
During 0 minutes, heat to 200-250 ° C., several kg / cm ^Two
Apply pressure and fix.

Subsequently, Ni, Cu or A is used as a mask material.
and a metal film 53 having a thickness of about 0.5 to 1 .mu.m, and a pattern 54 corresponding to the ink discharge nozzles 44 shown in FIG. 1C or FIG. A mask for selectively etching the plate 42 is formed. When a helicon wave dry etching apparatus is used to form the ink discharge nozzles 44 in the orifice plate 42 as in this example, the metal film 35 of Ni, Cu or Al is used as a mask as described above. The selectivity between the polyimide film 52 and the metal film 53 is approximately 50 to 100. Therefore, about 30 μm polyimide film 5
The etching of 2 is sufficiently possible even with a mask of the metal film 53 of 1 μm or less.

After the formation of the metal mask, the chip substrate 4
6, that is, the silicon wafer 47 shown in FIG. 3 (b) is put into a helicon wave etching apparatus, and as shown in FIG. 4 (b), holes are formed in the ink discharge nozzles 44 by dry etching. Oxygen is used as a process gas for dry etching using a helicon wave etching apparatus. The oxygen O ₂ for processing is placed in the helicon wave etching device, as shown in FIG.
As shown in FIG. 5, oxygen plasma 55 is formed, and oxygen ions 56 and oxygen radical atoms 57 are sprayed on the metal mask surface.
4 is drilled.

By the way, the adhesive 51a on the upper surface of the orifice plate 42 does not cause a serious problem when holes are formed by a usual dry etching apparatus or holes formed by an excimer laser. However, when a helicon wave etching apparatus is used to perform a hole drilling operation at high speed as in the present invention, the helicon wave etching uses a large ion current, so that the temperature rise of the workpiece is higher than when other etching methods are employed. It is extremely large, and as a result, the following problems occur.

FIG. 5 (a) is a view showing a defect in a case where a hole is normally formed by a helicon wave etching apparatus, and FIG. 5 (b) is a diagram showing a defect hole in FIG. FIG. As shown in FIGS. 5 (a) and 5 (b), when holes are normally formed by a helicon wave etching apparatus, wrinkles 58 are generated on the surface of the orifice plate 42, and as a result, the In this case, an etching residue remains or the shape of the discharge port 44 'is distorted. For this reason, during printing,
That is, there is a problem that ink is ejected in a direction different from the direction perpendicular to the surface of the orifice plate 42, and a problem that minute unnecessary dots called satellites land around the landed dots.

As a cause of the wrinkles generated on the surface of the orifice plate 42, a large difference in the coefficient of thermal expansion between the metal mask such as Al, Cu or Ni and the adhesive 51a can be mentioned. However, as described above, the orifice plate 42
The adhesive 51a on the front surface is for preventing the orifice plate 42 from rolling up during the working process and cannot be omitted.

Therefore, in the method of piercing the ink discharge nozzle 44 to the orifice plate 42 by the helicon wave etching apparatus of the present invention, it is noted that the glass transition point Tg of the thermoplastic polyimide used as the adhesive 51a is about 200 ° C. Then, etching is performed while cooling the silicon wafer 29 to 200 ° C. or lower.

FIG. 6 (a) is a diagram schematically showing a helicon wave etching apparatus, FIG. 6 (b) is a plan view of the wafer fixing stage, and FIG. 6 (c) is a plan view of FIG. It is a partial enlarged view. As shown in FIG. 1A, the helicon wave etching apparatus includes a process chamber (processing chamber) 61 and a wafer fixing stage 62 projecting into the processing chamber 61. The silicon wafer 47 shown in FIG.
As shown by an arrow G in FIG. 6A, the wafer is carried in from the left side of the apparatus, and is mounted on the wafer fixing stage 62 described above.

The silicon wafer 47 is fixed by a mechanical chucking method (a fixing method performed mechanically) or an electrostatic chuck method (a fixing method performed electrostatically). The wafer fixing stage 62 is formed integrally with the support 63 on the support 63, for example, at 13.56 MHz via the support 63.
RF (radio-frequency) bias is applied from the ground side AC power supply 64.

On the wafer fixing stage 62, an antifreeze solution from a low-temperature circulator 65 is supported.
Circulates through. Further, H for promoting heat conduction is provided in a minute gap h generated between the wafer fixing stage 62 and the silicon wafer 47 which is a feature of the present invention.
The refrigerant gas 66 such as e-gas is supplied from a refrigerant supply pump 67 via a support 63 and a refrigerant supply passage 68 provided in the wafer fixing stage 62 to the wafer fixing stage 6.
2 from the coolant outlet 69 opening on the wafer support surface of the silicon wafer 47 and the low-temperature circulator 65 of the silicon wafer 47.
Promotes cooling.

That is, the wafer fixing stage 62 of the helicon wave etching apparatus is cooled to -10 ° C. or lower with a circulating antifreeze solution, and the refrigerant gas 66 is interposed between the wafer fixing stage 62 and the silicon wafer 47, so that the helicon wave The temperature rise of the silicon wafer 47 during the wave dry etching is effectively suppressed.

A magnet (magnet) 71 for confining the oxygen (O ₂ ) plasma 55 in the processing chamber 61 is provided around the processing chamber 61, and a source is provided at the upper center of the processing chamber 61. A chamber (head flow chamber) 72 is provided. Antennas 73 are arranged in upper and lower stages around the source flow chamber 72, and outside thereof, in order to contain plasma,
An inner coil (inner coil) 74 and an outer coil (outer coil) 75 are arranged inside and outside.

A pipeline 76 is opened above the source flow chamber 72, from which a process gas (processing oxygen) is supplied. Further, a 13.56 MHz voltage corresponding to, for example, the cycle of the ground side AC power supply 64 is applied to the two-stage antenna 73 from the source power supply (source power supply) 77.

With this configuration, the processing oxygen supplied from the pipeline 76 in the source flow chamber 72 is
3 and is sent into the processing chamber 61 by the inner coil 74 and the outer coil 75. The oxygen plasma 55 is supplied to the silicon wafer 47 (that is, the chip substrate 46 of the ink jet printer head 48) through the support 63 and the wafer fixing stage 62 in the processing chamber 61.
Hereinafter, although the processing is actually performed in the state of the silicon wafer 47, the processing is described as the chip substrate 46).

The magnet 71 disposed on the peripheral wall of the processing chamber 61 prevents the electrons of the oxygen plasma 55 from disappearing on the wall. As a result, the oxygen plasma 55 falls down onto the chip substrate 46 in a uniform distribution, and the metal film 53
Orifice plate 4 exposed by mask pattern 54
2 Crash against the surface and etch. The processed process gas is discharged to the right of the apparatus as indicated by arrow J in FIG. 6 (a).

In the helicon wave etching, the electrode arrangement is not parallel plate type as in RIE (reactive ion etching), but similarly, the potential of the chip substrate 46 draws oxygen ions into the oxygen plasma 55. In the direction. As a result, oxygen ions 56 are sputtered on the workpiece (orifice plate 47), and at the same time, radical atoms 57 are sputtered.
Chemical etching is also performed by using.

For example, when the workpiece is polyimide, its main component is carbon, so that CxHy + O → CO ₂ ↑ +
Etching is performed by a chemical reaction of H ₂ O ↑. Therefore, in the helicon wave etching, anisotropic etching such as hole processing can be performed at a high selectivity by using sputtering (physical etching) + radical reaction (chemical etching).

By the way, despite the fact that the chip substrate 46 is etched while being sufficiently cooled, the above-described cooling method alone causes the problems shown in FIGS. 5A and 5B. . Examining the reasons revealed the following.

FIG. 7 is a diagram for explaining the cause of the problem that occurs even when the chip substrate 46 is etched while being cooled. That is, as shown in the figure, since the ink receiving hole 38 is opened on the back surface of the chip substrate 46, the refrigerant gas 66 is discharged from the moment the ink discharge nozzle 44 penetrates by the helicon wave dry etching. As shown by an arrow K in FIG. 10, the ink escapes from the ink discharge nozzle 44 to the upper portion through the ink receiving hole 38, the common ink supply groove 37, and the ink flow path 43.

Normally, in the dry etching, when the ink discharge nozzle 44 penetrates, residues such as the adhesive 51a adhere to the wall of the hole. Then, over-etching is performed for about 1 to 3 minutes. However, at this time, as described above, the refrigerant gas 66
When it comes out from the upper side, the wafer fixing stage 6
2, the degree of vacuum in the gap h between the back surface of the chip substrate 46 and
The thermal conductivity decreases by that amount, and the temperature of the chip substrate 46 rises sharply.

As a result, wrinkles are generated on the surface of the orifice plate 42 as shown in FIGS. 5 (a) and 5 (b). Further, at this time, the density of the oxygen plasma 55 'becomes non-uniform due to a large amount of the refrigerant gas 66 blown out above the orifice plate 42. As a result, the destruction or deterioration of the MOS transistor or the capacitor of the drive circuit 31 may occur. It has also been found that this may cause the drive circuit 31 to be damaged.

In the first embodiment, in order to eliminate the problem caused by the refrigerant gas 66 escaping from the ink receiving hole 38 to the upper portion through the ink discharge nozzle 44 when the ink discharge nozzle 44 penetrates, The ink receiving hole 38 is temporarily sealed.

FIG. 8A is a view showing an example in which a sheet with an adhesive is attached to the back surface of the chip substrate 46 to temporarily seal the ink receiving holes 38, and FIG. FIG. 7C is an enlarged cross-sectional view of a portion in the vicinity of the ink discharge nozzle 44 having a correct shape when a hole is formed in the discharge nozzle 44.
FIG. 4B is a plan view showing the hole of the ink discharge nozzle 44 having the correct shape in FIG.

The sheet with adhesive 78 shown in FIG. 7A is a sheet having a two-layer structure in which a heat-peelable adhesive 81 is laminated on a polyester film 79 as a base material. The above-mentioned thermal peeling adhesive 81 has an adhesive force at room temperature, but has a property of easily peeling off from the interface with the chip substrate 46 at a certain temperature or higher. The peeling temperature is, for example, 90 ° C. or more for α type, 120 ° C. or more for β type, and 150 ° C. or more for γ type.

FIG. 9 is a table showing the results of a test of the adhesive force of the heat-peelable adhesive 81 using a PET film as the adherend. In the table, the types α, β, and γ are shown in the leftmost column, and the thermal peeling temperature (° C.) for each type is shown as “90, 120, 150”. As shown in the table, the adhesive of type β having a thermal peeling temperature of 120 ° C. has an adhesive force before peeling of 500 g / 20 m even if its coating thickness is 15 μm thinner than the γ type having a thermal peeling temperature of 150 ° C.
m and the strongest compared to the other two types.

When a sheet 78 with an adhesive is attached to the chip substrate 46, if air is entrained at the interface between the chip substrate 46 and the heat release adhesive 81, the chip substrate 46 is carried into the helicon wave etching apparatus. Then, the above-mentioned entrained air expands in a vacuum, causing a problem that the chip substrate 46 is lifted from the wafer fixing stage 62. Therefore, a roller or a brush is used so that the air is not entrained. Use tools to ensure close contact.

In this manner, when the helicon wave etching shown in FIG. 6A is performed, even after the ink discharge nozzle 44 penetrates, the uniform cooling state similar to that shown in FIG. 6C can be maintained. Thus, over-etching can be performed with a margin, and as shown in FIGS. 8 (b) and 8 (c), it is possible to form the ink discharge nozzle 44 having a desired and appropriate shape.

After the helicon wave etching process is completed, the chip substrate 46 with the adhesive-attached sheet 78 adhered thereto is placed in an oven, and is heated to 90 ° C., 120 ° C., or 150 ° C. depending on the thermal peeling temperature of each adhesive. Heat at ℃ for 3 minutes or more. As a result, as shown in FIG. 8B, the thermal peeling adhesive 81 can be easily peeled off without being left on the chip substrate 46 side.

Incidentally, the following setting data is obtained when the thermal peeling temperature 90
Adhesive-attached sheet 78 coated with a heat release adhesive 81
4 shows an example of a process of forming a hole in the orifice plate 42 by helicon wave etching on the chip substrate 46 in the case of using.

Thickness of orifice plate; 16 μm Ultimate vacuum: 5.6 × 10E-4 Process gas (oxygen): 50 sccm Process pressure: 0.5 Pa Source power: 1000 W Bias power: 300 W Process time: 13 minutes Circulator set temperature: -30 ° C Cooling He flow rate: 10 sccm Polyimide etching rate: about 1.6 μm / min Under the above conditions, the etching time until penetration of the orifice plate is 10 minutes, and the over-etching time is 3 minutes. There was no decrease in the adhesive strength of the sheet with adhesive 78 during the processing, and the expansion of the chip substrate 46 by closing the ink receiving hole 38 did not adversely affect the helicon wave dry etching.

The temporary sealing of the ink receiving holes 38 of the chip substrate 46 is not limited to the sheet 78 with an adhesive, but may be, for example, a dry film. FIG. 10 is a diagram illustrating an example in which the dry film 82 is laminated (laminated) on the back surface of the chip substrate 46 at 80 to 90 ° C. Thus, even with the use of the dry film 82, the ink receiving hole 38 can be closed. In this case, after the hole forming process by the helicon wave dry etching is completed, peeling is performed using a peeling liquid such as monoethanolamine.

FIGS. 11A to 11E are diagrams schematically showing a method of manufacturing an ink jet printer head according to the second embodiment. The configurations shown in FIGS.
4 (a) and 8 (b) and 8 (c), except that the order of the manufacturing steps is slightly different.
8A and 8B and 8C are denoted by the same reference numerals.

In the second embodiment, first,
As shown in FIG. 11A, after a drive circuit (not shown) is formed on the chip substrate 46, a heat generating portion 33, a common electrode 34, an individual wiring electrode 36, and a common ink supply groove 37 are formed. The partition wall 39 (39-1, 39-2, 39-3 (not shown)) is formed. Further, as shown in FIG. 3B, an orifice plate 42 is laminated, a metal film 53 is formed as shown in FIG. 3C, and a mask pattern 54 is formed. In this manner, only the processing from the front side of the chip substrate 46 is performed, and the process proceeds to a hole forming process by helicon wave dry etching, and the ink discharge nozzles 44 are formed as shown in FIG. Thereafter, as shown in FIG.
An ink receiving hole 38 is formed from the back surface to communicate with the common ink supply groove 37 on the front side, and penetrates the ink flow passage of the chip substrate 46.

As described above, the formation of the ink receiving holes 38 shown in FIG. 9E for performing the drilling operation from the back surface of the chip substrate 46 has not yet been performed at the stage of the helicon wave dry etching shown in FIG. Therefore, when the ink discharge nozzle 44 penetrates, the ink flow path of the chip substrate 46 does not penetrate. Therefore, the refrigerant gas shown in FIG. As shown in FIG. 8A or FIG. 10, the ink 66 does not flow out to the front side, so that the ink receiving hole 38 on the back surface of the chip substrate 46 is temporarily sealed as in the case of FIG. Even after the discharge nozzle 44 penetrates, a uniform cooling state similar to that shown in FIG. 6C can be maintained, whereby over-etching can be performed with a margin, and ink discharge of a desired appropriate shape can be performed. No It is possible to form the LE 44.

FIGS. 12A and 12B are diagrams schematically showing a method of manufacturing an ink jet printer head according to the third embodiment. Incidentally, the configuration shown in FIGS.
(a) and the configuration shown in FIGS. 8 (b) and 8 (c).
12 (a) and 12 (b) are given the same numbers as in FIG. 4 (a) and FIGS. 8 (b) and 8 (c).

In the third embodiment, first,
As shown in FIG. 12A, the helicon wave dry etching shown in FIG. 6A, FIG.
Drill hole 4. The processing conditions in this case are the same as in the first embodiment. Then, as shown in FIG. 12 (b), immediately after the ink discharge nozzle 44 penetrates, the coolant supply pump 67 is stopped to stop the blowing of the coolant gas 66 from the coolant outlet 69 of the wafer fixing stage 62. (See FIGS. 6 (a), (b) and (c)). The detection of the penetration of the ink discharge nozzle 44 will be described later.

By stopping the blowing of the refrigerant gas 66 from the refrigerant blowing port 69 of the wafer fixing stage 62, the flow of the refrigerant gas 66 is stopped, and the inertia and pressure of the flow are reduced. In the direction 44, the refrigerant gas 66 near the ink receiving hole 38 only slightly escapes, and most of the refrigerant gas uniformly stays in the gap between the bottom surface of the chip substrate 46 and the upper surface of the wafer fixing stage 62. As a result, the refrigerant function of cooling the substrate by the staying refrigerant gas 66 is maintained for a short period. This retained refrigerant gas 6
Over-etching is performed before 6 is dissipated.

FIG. 13 is a flow chart showing the procedure of the helicon wave dry etching in the third embodiment. As shown in the figure, first, the orifice plate 42 is placed on the substrate (silicon wafer 47), that is, the orifice plate 42 is laminated and fixed on the partition wall 39 (step S1). Next, a metal film 53 is formed on the surface of the orifice plate 42,
An etching mask 54 is formed on the metal film 53 (Step S2).

Subsequently, the substrate is placed in a helicon wave etching apparatus and fixed on a wafer fixing stage 62.
The low-temperature circulator 65 (see FIG. 6) is driven to circulate the antifreeze liquid, and the refrigerant supply pump 67 is driven to start the flow of the refrigerant gas.
6 is sent between the substrate 47 and the wafer fixing stage 62 (step S3).

Subsequently, helicon wave dry etching is started and the penetration of the ink discharge nozzle is monitored (step S4). This etching process requires about 10 minutes to pass through the ink discharge nozzle. Then, when the time point at which the ink discharge nozzle penetrates is detected after a lapse of about 10 minutes (step S5), the refrigerant supply pump 67
Is stopped to stop the flow of the refrigerant gas between the substrate 47 and the wafer fixing stage 62 (step S6). In this process, a time of about 100 msec elapses.

Subsequently, the etching is continued for one minute, that is, after the over-etching is performed for one minute, the helicon wave dry etching is stopped (step S7). Thus, the opening of the ink discharge nozzle 44 in the orifice plate 42 is completed.

As described above, in this example, the time required for the orifice plate to penetrate through the ink discharge nozzles is about 10 minutes among the conditions shown in the case of the first embodiment. In order to use only the residual refrigerant gas for cooling the substrate, the processing time of over-etching is set short,
The over-etching time is 1 minute.

Next, the detection of the penetration point of the ink discharge nozzle 44, which is a main part of this embodiment, will be described. There are various methods such as emission spectroscopy, reflected light analysis, gas analysis, pressure measurement, and flow measurement for detecting the time when the ink ejection nozzle 44 penetrates, and any of these methods is used. Used.

First, in the emission spectroscopy, a reaction product or light having a specific wavelength of a reaction gas generated in the plasma etching process in the helicon wave dry etching described above is detected, and a temporal change in the light intensity is monitored. In the vicinity of the end point, a change occurs in the monitored signal because a substance contributing to the reaction decreases. In the present embodiment, light having a specific wavelength of a reaction product or reaction gas generated by polyimide is detected.

Next, in the reflected light spectroscopy, when the target is composed of the object to be etched and the substrate, the reflected light of the object to be etched is observed during the etching, and the reflected light of the substrate is observed after the etching. You will see the light. In the case of the present embodiment, the reflected light of the polyimide as the orifice plate during the etching, Si and the wiring material (Au, Al) after the etching.
) Or reflected light from a resistor (such as Ta-Si-O).

In the gas analysis method, during etching, the refrigerant gas flowing in the gap between the back surface of the substrate and the wafer fixing stage does not flow out to the surface of the substrate because the ink discharge nozzle of the orifice plate does not penetrate. Then, the refrigerant gas blows out to the substrate surface immediately after penetrating the ink discharge nozzle. The gas is detected. In the case of this example, for example, He is detected.

In the pressure measurement method, the coolant gas flowing in the gap between the back surface of the substrate and the wafer fixing stage does not flow out to the surface of the substrate because the ink discharge nozzle of the orifice plate does not penetrate during etching. Then, the refrigerant gas blows out to the substrate surface immediately after penetrating the ink discharge nozzle. That is, the etching end point is detected by the change in the pressure of the refrigerant gas before and after the ink discharge nozzle penetrates.

The flow rate measuring method is as follows.
As described above, the refrigerant gas flowing in the gap between the substrate back surface and the wafer fixing stage does not flow out to the substrate surface, and the refrigerant gas blows out to the substrate surface immediately after penetrating the ink discharge nozzle, so that the refrigerant gas is controlled. The point in time at which the flow meter changes is detected as the etching end point.

FIGS. 14A to 14F are diagrams schematically showing a method of manufacturing an ink jet printer head according to the fourth embodiment. FIG. 2A shows the state of the chip substrate immediately after completing the above-described manufacturing steps 1 to 4, that is, the same state as FIG. 1B or FIG.
The same numbers as those in FIG. 1B or FIG. 2B are given.

In this example, the processing method is slightly different from the state shown in FIG. That is, as shown in FIG. 4B, first, a water-soluble resin material such as PVA (polyvinyl alcohol) is coated on the surface of the chip substrate 46 as a protective film 84. Since the ink receiving hole 38 penetrates through the back surface of the chip substrate 46, when the protective film 84 enters the ink receiving hole 38 from the common ink supply groove 37, it is necessary to prevent the protective film 84 from further wrapping around the back surface of the chip substrate 46. It is preferable to attach an outflow prevention film (not shown) or the like to the chip substrate 46, that is, the back surface of the silicon wafer 47.

The above-mentioned protective film 84 is formed later on the chip substrate 46.
Water-soluble resin materials such as water-soluble PVA, polyvinyl ether, and polyethylene oxide, and resin materials such as nylon, urea resin, glyptal resin, and cellulose resin that are soluble in acidic solvents. Alternatively, a resin material such as polyester, urea resin, and melamine resin that is soluble in an alkaline solvent, or a resin material that is soluble in another solvent such as acetone, benzene, ethanol, and chloroform is used.

As a method of coating the protective film 84, there are various methods such as spin coating, roll coating, spray coating, printing, potting, and molding, and any of these methods can be used.

Since the protective film 84 coated on the partition wall 39 shown in FIG. 9B obstructs the subsequent attachment of the orifice plate 42, the protective film 84 is wiped off, scraped off or other appropriate method. After removal as shown in (c), the protection film 84 is cured by drying or the like. Further, the unnecessary outflow prevention film is peeled off. Next, in the same manner as in a normal manufacturing process, the orifice plate 42 was heated and bonded onto the partition wall 39 by an adhesive layer as shown in FIG. A metal film 53 is formed, and a pattern 54 is formed.

Subsequently, holes are formed in the ink discharge nozzles 44 and, particularly, not shown in the drawing, by a helicon wave dry etching, as shown in FIG. In this case as well, after the holes such as the ink discharge nozzles penetrate, the over-etching is performed for an appropriate time, but the etching process by the over-etching is applied to the surface of the protective film 84 and is located under the protective film 84. The heating element 33, the electrode portion, or the drive circuit 31 is not directly subjected to the etching process, and therefore, there is no problem that the heating element 33 and the drive circuit 31 are damaged due to over-etching.

In addition, since the blowing of the refrigerant gas when the ink discharge nozzle penetrates in the helicon wave dry etching described in the first to third embodiments is blocked by the protective film 84 that blocks the ink flow path, the ink flow is prevented. The cooling of the chip substrate 46 is maintained even after the discharge nozzle has penetrated, whereby normal over-etching can be performed, and the risk of a drive circuit failure due to blowing of the refrigerant gas is eliminated.

Thereafter, the unnecessary protective film 84 is washed away with warm water, and the chip substrate 4 is removed as shown in FIG.
Remove from 6. When a resin material other than water-soluble is used for the protective film 84, the protective film 84 is dissolved by an acid, an alkali, a solvent, or the like that can dissolve the protective film 84. Further, by the process of removing the protective film 84, the residue due to dry etching remaining on the surface of the protective film 84 can be removed together.

In the above-mentioned helicon wave dry etching, etching is performed using oxygen plasma. This oxygen plasma has a higher etching effect on organic substances such as resin materials than on inorganic substances and metals.
Therefore, in forming the protective film 84 in this example, a resin material containing a metal or an inorganic substance having high etching resistance has a higher function as a protective film than using only a resin material. Specifically, a resin material such as PVA contains ceramics such as alumina and silicon nitride or glass particles, or Al, Ni, Cu, Fe, Co, A
A material containing a metal such as g may be used as the protective film material.

Further, instead of the resin or the resin material containing a metal or an inorganic substance as described above, the protective film may be formed of a polyvinyl cinnamate-based photoresist or a rubber-based negative (cyclized polyisoprene / bis azide) photoresist. A resist, a novolak resin-based positive photoresist, an azide compound-based photoresist, or the like may be used.

In this case, after a protective film is coated on the chip substrate, patterning is performed by exposing and developing so that the protective film remains on portions other than the partition walls, and then baking is performed to cure the protective film. . Then, an orifice plate is attached, a metal film mask is formed, and holes are formed in the ink discharge nozzles by dry etching. Then, the unnecessary protective film is peeled off with an alkali peeling liquid or a solvent or the like.

Since the photosensitivity is imparted to the protective film, it is possible to form a fine pattern using a photolithography technique, and there is an advantage that fine processing can be performed in accordance with miniaturization of an ink jet print head. .
Further, instead of the liquid photoresist, a dry film resist material may be used. In this case, the application of the dry film resist is performed by applying heat and pressure using a heating roller. Since this is a material that does not have fluidity compared to a liquid resist material,
There is no need to attach an outflow prevention film to the back surface of the silicon wafer, and the process can be simplified.

Further, in the above embodiment, the ink discharge nozzle of the roof shooter type ink jet printer head has been described. However, the present invention is not limited to this, and may be applied to the ink discharge nozzle of the side shooter type ink jet printer head. Good. Further, the present invention is not limited to the thermal type ink jet printer head, but can be applied to ink discharge nozzles of a piezo type ink jet printer head.

[0098]

As described above in detail, according to the present invention, a helicon wave etching apparatus capable of simultaneously opening a large number of ink discharge nozzles at a high speed is used. In order to prevent the temperature of the inkjet head being manufactured from rising due to the coolant gas leaking from the ink discharge nozzle that has been made, the holes of the ink discharge nozzles are drilled, so that wrinkles are generated on the orifice plate surface and residues generated by the hole drilling work are removed. Inconveniences such as dripping into the ink discharge nozzles are eliminated, and thus, despite the helicon wave dry etching that generates high temperatures, it is possible to form ink discharge nozzles of a desired and correct shape, thereby improving product yield. And contribute to lower product costs.

Further, since a large amount of refrigerant gas does not blow out to the upper surface of the substrate when penetrating the ink discharge nozzle, there is no danger of the drive circuit being destroyed by the refrigerant gas despite the use of the refrigerant gas. A helicon wave etching apparatus capable of simultaneously opening a large number of ink discharge nozzles at a high speed can be effectively used.

Further, by using the ink flow path shielding member to block the passage of the refrigerant gas and to cover the heating element, damage to the heating element due to over-etching can be prevented.

[Brief description of the drawings]

FIGS. 1A, 1B, and 1C are diagrams showing a method of manufacturing an ink jet printer head according to an embodiment in the order of steps, each being formed on a silicon chip substrate in a series of steps. Schematic plan and cross-sectional views of the state are schematically shown.

2 (a), 2 (b) and 2 (c) are enlarged views of the plan views of FIGS. 1 (a), 1 (b) and 1 (c), respectively.
The lower section is a sectional view taken along line FF 'of the upper section.

3A is a diagram illustrating a state in which a full-color inkjet printer head is configured by arranging four rows of mono-color inkjet printer heads, and FIG. 3B is a diagram illustrating a state in which many full-color inkjet printer heads are formed on a silicon wafer; It is.

FIG. 4A is an enlarged cross-sectional view showing a state before forming an ink discharge nozzle hole near an ink discharge nozzle, and FIG. 4B is a diagram showing a state in which a hole is normally started by a helicon wave etching apparatus. .

FIG. 5A is a diagram showing a defect when a hole is normally formed by a helicon wave etching apparatus, and FIG. 5B is a plan view showing the defect hole of FIG.

6A is a diagram schematically showing a helicon wave etching apparatus, FIG. 6B is a plan view of a wafer fixing stage, and FIG.
It is the elements on larger scale of (a).

FIG. 7 is a diagram illustrating a cause of a problem that occurs even when etching is performed while cooling a chip substrate.

8A is a diagram showing an example in which a sheet with an adhesive is attached to the back surface of a chip substrate to temporarily seal an ink receiving hole, and FIG.
FIG. 3 is an enlarged cross-sectional view of a portion in the vicinity of an ink discharge nozzle of a correct shape formed by this method, and FIG. 3C is a plan view showing the hole of the ink discharge nozzle of FIG.

FIG. 9 is a table showing the results of a test of the adhesive strength of a heat-peelable adhesive using a PET film as an adherend.

FIG. 10 is a diagram showing an example in which a dry film is laminated on the back surface of a chip substrate at 80 to 90 ° C.

FIGS. 11A to 11E are diagrams schematically showing a method of manufacturing an ink jet printer head according to the second embodiment.

FIGS. 12A and 12B are diagrams schematically illustrating a method of manufacturing an ink jet printer head according to a third embodiment.

FIG. 13 is a flowchart showing a processing procedure of helicon wave dry etching in the third embodiment.

FIGS. 14A to 14F are diagrams schematically showing a method of manufacturing an ink jet printer head according to a fourth embodiment.

FIG. 15A is a perspective view schematically illustrating a configuration of a printer including a conventional roof shooter type inkjet printer head, FIG. 15B is a plan view schematically illustrating an ink ejection surface of the inkjet printer head, (c) is the DD '
FIG. 3C is a view showing a silicon wafer on which an ink jet printer head is manufactured, as viewed from a cross-sectional arrow.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Printer 2 Carriage 3 Ink-jet printer head 4 Ink cartridge 5 Guide rail 6 Toothed drive belt 7 Flexible communication cable 8 Main frame 9 Platen 10 Paper 11 Paper feed roller 12 Paper discharge roller 13 Motor 14 Chip substrate 15 Orifice plate 16 Nozzle row 17 Ink discharge nozzle 18 Heating element 19 Drive circuit 21 Silicon wafer 22 Individual wiring electrode 23 Common electrode 24 Wiring terminal 25 Power supply terminal 26 Ink flow path 27 Partition wall 28 Ink receiving hole 29 Common ink supply groove 30 Chip substrate 31 Drive circuit 32 Drive circuit terminal 33 Heating part 33 'Heating part row 34 Common electrode 35 Common electrode power supply terminal 36 Individual wiring electrode 36' Individual wiring electrode row 37 Common ink supply groove 38 Ink receiving hole 39 Partition walls 39-1, 39-2 a. Cusile partition 39-3 Partition partition 41 Ink pressurizing chamber 42 Orifice plate 43 Ink flow path 44 Ink ejection nozzle 45 Mono color inkjet printer head 46 Chip substrate 47 Silicon wafer 48 Full color inkjet printer head 49 Nozzle row 51a, 51b Adhesive 52 Polyimide Film 53 Metal film 54 Pattern 55, 55 'Oxygen (O2) plasma 56 Oxygen ion 57 Oxygen radical atom 61 Process chamber (processing chamber) 62 Wafer fixing stage 63 Support 64 Ground-side AC power supply 65 Low temperature circulator h Gap 66 Refrigerant Gas 67 Refrigerant inlet pump 68 Refrigerant inlet channel 69 Refrigerant outlet 71 Magnet (magnet) 72 Source chamber (source flow chamber) 73 Antenna 74 Inner coil (inner coil) 7 Reference Signs List 5 outer coil (outer coil) 76 pipeline 77 source power supply (source power supply) 78 sheet with adhesive 79 polyester film 81 heat release adhesive 82 dry film

Continued on the front page (72) Inventor Junji Shioda 3-10-6 Imai, Ome-shi, Tokyo Casio Computer Co., Ltd. Ome Office (72) Inventor Satoshi Kanemitsu 3-10-6 Imai, Ome-shi, Tokyo Casio Computer Stock (72) Inventor Yoshihiro Kawamura 3-10-6 Imai, Ome-shi, Tokyo Casio Computer Co., Ltd. Ome Office F-term (reference) 2C057 AF91 AF93 AG14 AP02 AP13 AP22 AP23 AP32 AP33 AP47 AQ02

Claims (6)

[Claims] 1. A method of manufacturing an ink jet printer head for performing printing by applying pressure to ink and ejecting the ink from a plurality of ejection nozzles to a recording medium, comprising: a partition partitioning a plurality of ink flow paths on a surface of a substrate; Installing a pressure energy generating element provided for each ink flow path, forming an ink supply path penetrating between the back surface of the substrate and the front surface, and forming the ink supply path from the back surface of the substrate. Blocking a flow path leading to the ink flow path through the substrate, installing an orifice plate on which the discharge nozzle is to be formed on the surface of the substrate, and cooling the back surface of the substrate while interposing a cooling medium gas therebetween. A step of collectively forming the plurality of discharge nozzles at predetermined positions on the orifice plate by dry etching, and a step of releasing shielding of the flow path. A method for manufacturing an inkjet printer head, comprising: 2. The method for manufacturing an ink jet printer head according to claim 1, wherein the step of shielding the distribution channel is performed by attaching a shielding sheet to the back surface of the substrate. 3. The method for manufacturing an ink jet printer head according to claim 1, wherein the step of shielding the flow path is performed by filling the flow path with a soluble resin easily dissolved by a solvent or water. . 4. The ink jet printer head according to claim 3, wherein said soluble resin covers said pressure energy generating element. 5. A method of manufacturing an ink jet printer head for performing printing by applying pressure to ink and ejecting the ink from a plurality of ejection nozzles to a recording medium, comprising: a partition partitioning a plurality of ink flow paths on a surface of a substrate; A step of installing a pressure energy generating element provided for each ink flow path; a step of forming an ink supply groove on the surface of the substrate; and an orifice plate on which the discharge nozzle is to be formed on the surface of the substrate Installing the plurality of discharge nozzles at predetermined positions on the orifice plate by dry etching while cooling the back surface of the substrate with a cooling medium gas interposed therebetween; and forming the plurality of discharge nozzles on the back surface side of the substrate. Forming an ink receiving hole communicating with the ink supply groove. 6. A method for manufacturing an ink jet printer head for applying pressure to ink and ejecting the ink from a plurality of ejection nozzles to a recording medium to perform recording, comprising: a partition partitioning a plurality of ink flow paths on a surface of a substrate; Installing a pressure energy generating element provided for each ink flow path, forming an ink supply path penetrating from the back surface of the substrate to the front surface, and forming the discharge nozzle on the front surface of the substrate Setting the orifice plate to be provided, and starting the supply of the cooling medium gas to the back surface side of the substrate, and setting the plurality of discharge nozzles to the orifice plate while cooling the substrate with the gas interposed therebetween. Start dry etching to form a position, stop the supply of the cooling medium gas substantially immediately after the discharge nozzle has penetrated,
A dry etching step of terminating the dry etching after a predetermined time, and a method for manufacturing the ink jet printer head.