JP2001006932A - Magnetoresistive film and magnetic reading sensor using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce temperature dependency of an MR ratio of a change rate in magnetic resistance and to improve heat resistance. SOLUTION: A magnetoresistive film 11 comprises a regular antiferromagnetic layer 1, a solid magnetic structure 2 bonded thereon, a non-magnetic conductive layer 3, and a free magnetic layer part 4 having at least one magnetic layer. The solid magnetic structure 2 has a multilayer film structure including one or more three-layer structure, which is constituted by a first ferromagnetic layer 21, a non-magnetic intermediate layer 23, and a second ferromagnetic layer 22. Further, the first and second ferromagnetic layers are parallel with each other in a magnetization direction, or parallel components are included therein.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive film and a magnetic reading sensor having a so-called spin valve type structure.

[0002]

2. Description of the Related Art Conventionally, a pinned magnetic layer bonded to an antiferromagnetic layer in a spin valve film is generally made of a crystalline ferromagnetic material having an fcc structure, such as NiFe, CoFe, CoFeB.
A single layer film is used. By the way, a spin valve film using an ordered antiferromagnetic material as the antiferromagnetic layer requires a high-temperature heat treatment for ordered transformation. However, the conventional spin-valve film has a problem in that the linear response of the magnetoresistive characteristic is reduced by the high-temperature heat treatment, and at the same time, the interlayer insulating layer coupling magnetic field Hf is increased. A sensor using an ordered antiferromagnetic layer is disclosed in
No. 6247.

On the other hand, the fixed magnetic structure has a three-layer structure of a magnetic layer / nonmagnetic layer / magnetic layer in which a nonmagnetic coupling film is inserted, and the magnetization directions of the two magnetic layers separated by the nonmagnetic layer are opposite to each other. Japanese Unexamined Patent Publication No. Hei 6-23652
No. 7 is disclosed in the official gazette.

[0004]

In the present invention, an ordered antiferromagnetic material is used as the antiferromagnetic layer.
In the magnetoresistive film having a fixed magnetic structure portion of a magnetic layer / non-magnetic layer / magnetic layer structure, a sufficiently high magnetoresistance ratio (MR ratio) is ensured even at a high temperature heat treatment, and higher heat resistance is obtained. And a magnetic reading sensor.

That is, in the present invention, a spin valve type magnetoresistive film and a magnetic reading sensor using the magnetoresistive film are used. In this configuration, the fixed magnetic structure in the spin valve film is described above. Magnetic layer /
Although it depends on the non-magnetic layer / magnetic layer structure, it has been determined that the specification of the magnetization direction of the magnetic layer affects the MR ratio and the heat resistance. Based on this, the temperature dependence of the MR ratio,
Another object of the present invention is to provide a magnetoresistive film having improved heat resistance and a magnetic reading sensor.

[0006]

A magnetoresistive film according to the present invention comprises an ordered antiferromagnetic layer, a fixed magnetic structure joined thereto, a nonmagnetic conductive layer, and at least one magnetic layer. And a pinned magnetic structure, wherein the pinned magnetic structure includes at least one set of three-layer structure of a first ferromagnetic layer, a non-magnetic intermediate layer, and a second ferromagnetic layer. The first and second ferromagnetic layers have a magnetization direction parallel or parallel to each other.

Further, the magnetic reading sensor according to the present invention comprises:
The magneto-sensitive portion is constituted by the above-described magnetoresistive film according to the present invention.

As described above, the magnetoresistive film according to the present invention comprises the first and second fixed magnetic structures.
The configuration is such that the magnetization directions of the magnetic layers are parallel or parallel to each other. In this case, it has been confirmed that the temperature dependency of the MR ratio and the heat resistance can be improved. The magnetic reading sensor according to the present invention improves the stability and reliability of magnetic reading by forming the magneto-sensitive portion with the magnetoresistive film.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a schematic sectional view showing an example of one embodiment of the present invention.
1 is a free magnetic layer having a regular antiferromagnetic layer 1 having a so-called spin valve structure, a fixed magnetic structure 2 joined thereto, a nonmagnetic conductive layer 3, and at least one magnetic layer. And a fixed magnetic structure 2 having at least one three-layer structure of a first ferromagnetic layer 21, a non-magnetic intermediate layer 23, and a second ferromagnetic layer 22. Structure and
In addition, the magnetization directions of the first and second ferromagnetic layers 21 and 22 are set to be parallel or include parallel components.

The ordered antiferromagnetic layer 1 is made of, for example, PtMn,
NiMn, IrMn, PdMn, PdPtMn, RhM
It can be constituted by at least one or more of n.

The non-magnetic intermediate layer 23 is made of Ta, Ru,
Cr, Rh, Ir, Au, Ag, Cu, Zr, Pt, M
It can be constituted by at least one of o and W.

When the nonmagnetic intermediate layer 23 is made of a Ta layer, its average thickness is selected to be 1 ° to 7 °. When the non-magnetic intermediate layer 23 is formed of a Ru layer, the average layer thickness is 1Å to 3Å or 13Å.
Å17Å. By selecting such a thickness, the first and second ferromagnetic layers 21 and 22 can have a configuration in which the magnetization directions are parallel to each other or include parallel components. That is, it is known that the coupling of the ferromagnetic layers separated by Ru repeats the ferromagnetic coupling and the antiferromagnetic coupling together with the Ru layer thickness of the nonmagnetic intermediate layer 23. When the average layer thickness of Ru is 1Å to 3Å, or 13Å to 17Å,
It has been confirmed that ferromagnetic coupling, that is, coupling in a direction having an inclination in which the magnetizations of the first and second ferromagnetic layers 21 and 22 are parallel or have at least a parallel component can be obtained.

Each of the above-mentioned layers can be formed by a known forming method, for example, sputtering.

Further, the magnetic reading sensor according to the present invention comprises:
FIG. 2 is a perspective view of an example of the embodiment, which is a magnetic reading sensor having a magnetically sensitive portion 31. The magnetically sensitive portion 31 is constituted by the above-described magnetoresistive film 11 according to the present invention. You.

An embodiment of the magnetoresistive film according to the present invention will be described, but the present invention is not limited to this embodiment. [Embodiment 1] In this embodiment, as shown in FIG. 1, an underlayer 13 made of Ta having a thickness of 5 nm is formed on a glass substrate 12, and a free magnetic layer portion 4 having a thickness of 3 nm is formed thereon. A magnetic layer 41 of 0.8 nm NiFe and a thickness of 2.0
A magnetic layer 42 of CoFe with a thickness of 2.5 nm is formed, and a nonmagnetic conductive layer 3 of Cu with a thickness of 2.5 nm is formed thereon. Then, a first ferromagnetic layer 21 made of CoFe having a thickness of 1.1 nm is formed thereon as the fixed magnetic structure 2,
A non-magnetic intermediate layer 23 of Ta and a 1.1 nm thick Co
A second ferromagnetic layer 22 made of Fe is formed, a regular antiferromagnetic layer 14 made of PtMn having a thickness of 20 nm is formed thereon, and a surface layer 14 made of Ta having a thickness of 10 nm for performing surface protection or the like is formed thereon. Was formed. That is, substrate / Ta / Ni
Fe / CoFe / Cu / CoFe / Ta / CoFe / P
The configuration was tMn / Ta. These layers were formed by sputtering. Then, each sample in which the thickness t of the nonmagnetic intermediate layer 23 due to Ta was changed in the range of 1 ° to 7 °, specifically, t = 1 °, t = 2 °, t = 5 °, t =
Samples of 7 ° were prepared, and heat treatment was performed in a magnetic field at temperatures described below.

Comparative Example 1 In Comparative Example 1, the thickness t of the Ta layer of the nonmagnetic intermediate layer 23 in the configuration of the magnetoresistive film 11 of Example 1 was set to t = 0, ie, Ta = 0. The structure was the same as that of Example 1 except that the layer was omitted. That is, substrate / Ta / NiFe / CoF
The configuration was e / Cu / CoFe / PtMn / Ta. This was heat-treated in a magnetic field at a temperature described below.

The samples of Example 1 and Comparative Example 2 described above were sequentially subjected to 265 ° C., 280 ° C., and 295 ° C., respectively.
3 and FIG. 4 show the results of measurement of the MR ratio MR ratio and the interlayer coupling magnetic field Hf after each heat treatment. 3 and 4, the mark ● plots the measurement results when the heat treatment temperature was set to 265 ° C., the mark Δ plots the measurement results when the heat treatment temperature was set to 280 ° C., and the mark Δ plots the measurement results when the heat treatment temperature was set to 295 ° C. It is.

First, looking at the dependency of the MR ratio on the thickness of the Ta layer, ie, the nonmagnetic intermediate layer 23, as shown in FIG. 3, t = 0 according to Comparative Example 1, ie, without the nonmagnetic intermediate layer 23, that is, the conventional structure. , The heat treatment temperature is set to a high temperature (295
° C), the heat treatment temperature is relatively low, for example, 265
As is clear from the comparison with the case of C, the MR ratio is greatly reduced.
In the case of the present invention in which the nonmagnetic intermediate layer 23 is provided with t ≧ 1Å, the change in the MR ratio is suppressed even by the high-temperature heat treatment.

Further, looking at the dependence of the interlayer coupling magnetic field Hf on the film thickness of the nonmagnetic intermediate layer 23 due to the same Ta as shown in FIG. 4, the comparative example 1 in which the nonmagnetic intermediate layer 23 does not exist, that is, t = 0. In this case, Hf rises sharply with an increase in the heat treatment temperature. However, in the magnetoresistive film according to the present invention provided with the nonmagnetic intermediate layer 23, the change is hardly observed. That is, heat resistance is improved. As is clear from FIGS. 3 and 4, the nonmagnetic intermediate layer 23 has an improved heat resistance with a thickness of only 1 mm.

[Embodiment 2] In this embodiment 2, the first and second ferromagnetic layers 21 and 22 of the fixed magnetic structure 2 are made of different materials. The ferromagnetic layer 21 is made of CoFe having a thickness of 1.1 nm, the second ferromagnetic layer 22 is made of NiFe having a thickness of 1.1 nm, and the non- Thickness t = 1 of magnetic intermediate layer 23
Set to. Other configurations were the same as those of the first embodiment.
That is, in the second embodiment, the substrate / Ta / Ni
Fe / CoFe / Cu / CoFe / Ta / NiFe / P
The configuration was tMn / Ta. Then, this was heat-treated in a magnetic field at a temperature described later.

Then, in particular, t =
The magnetoresistive film of 1 ° was designated as Sample 1, the magnetoresistive film of Example 2 was designated as Sample 2, and the magnetoresistive film of Comparative Example 1 was designated as Sample 3. For each sample, 265 ° C., 280 ° C. Heat treatment was performed in a magnetic field at 295 ° C. and 310 ° C. After each heat treatment, the MR ratio MR ratio and the interlayer coupling magnetic field Hf were measured.
The temperature dependence of the R ratio and Hf was measured. The measurement results are shown in FIGS. In FIGS. 5 and 6,
The mark ● plots the measurement results of sample 1, the mark ○ of sample 2 and the mark Δ of the sample 3.

Referring to the temperature dependence of the MR ratio in FIG. 5, the sample 1 according to the present invention having the non-magnetic intermediate layer provided in the fixed magnetic structure portion of the sample 3 does not include the non-magnetic intermediate layer. Further, it can be seen that Sample 2 has a small decrease in the MR ratio even by the high-temperature heat treatment.

Referring to the temperature dependence of Hf in FIG. 6, when the non-magnetic intermediate layer is not provided in the fixed magnetic structure portion of Sample 3, Hf tends to increase sharply with an increase in the heat treatment temperature. Compared to what can be seen, in samples 1 and 2, the increase in Hf is significantly suppressed even at high temperatures. With respect to the temperature dependence of Hf, there is almost no difference between the samples 1 and 2, but when considering the MR ratio, the sample 2, that is, the first ferromagnetic layer on the ordered antiferromagnetic layer 1 side is made of CoFe. Since the MR ratio is higher than that of the sample 1 made of NiFe, when applied to a magnetic read sensor described later, for example, a magnetic sensing portion of a read head for a magnetic recording medium, the read output can be increased. It turns out that it is advantageous when possible.

[Embodiment 3] In this embodiment 3, Ru having a thickness t = 0.2 nm (t = 2Å) is replaced with Ta of the nonmagnetic intermediate layer 23 of the fixed magnetic structure 2 in the embodiment 1. The other configuration was the same as that of the first embodiment. That is, in the third embodiment, the substrate / Ta /
NiFe / CoFe / Cu / CoFe / Ru (t = 0.
2 nm) / CoFe / PtMn / Ta. The magnetoresistive film having this configuration is referred to as Sample 4.

[Embodiment 4] In the embodiment 4, the Ru thickness t of the nonmagnetic intermediate layer 23 in the embodiment 3 is t = 1.3.
nm (t = 13 °). Other configurations were the same as those of the third embodiment. That is, in the fourth embodiment, the substrate / Ta / NiFe / CoFe / Cu / CoFe / Ru
(T = 13 °) / CoFe / PtMn / Ta. The magnetoresistive film having this configuration is referred to as Sample 5.

Samples 4 and 5 according to Examples 3 and 4
And the magnetoresistance ratio MR ratio of Sample 3 in which the nonmagnetic intermediate layer 23 according to Comparative Example 1 was not provided (t = 0),
By measuring the interlayer coupling magnetic field Hf, the MR ratio and H
The temperature dependence of f was measured. The measurement results are shown in FIG. 7 and FIG. 7 and 8, the mark ● plots the measurement results for sample 4, the mark ○ plots the measurement results for sample 5, and the symbol Δ plots the measurement results for sample 3. It is.

According to FIG. 7, Sample 3 without the non-magnetic intermediate layer shows a remarkable temperature dependence of the magnetoresistance ratio MR ratio.
It can be seen that the temperature dependence is significantly reduced. In other words, it can be seen that the reduction of the MR ratio due to thermal deterioration is suppressed and the heat resistance is excellent. Also, according to FIG. 8, the interlayer coupling coefficient Hf of sample 3 sharply increases as the temperature rises, whereas in the case of samples 4 and 5 of the present invention, the thermal dependence is reduced. ing.
Further, with respect to the heat resistance, the sample 5 in which the Ru thickness of the nonmagnetic intermediate layer 23 is larger shows more excellent heat resistance. This tendency is due to the fact that the thicknesses of Ru are 1 to 7 ° and 1 mm.
It was confirmed that it was shown in the entire range of 3 ° to 17 °.

As described above, it has been found that when Ru is used as the non-magnetic intermediate layer 23, the heat resistance is superior to that of the conventional structure in which the non-magnetic intermediate layer 23 is not provided. The magnitude of the MR ratio depends on the thickness of the Ru layer when the first and second ferromagnetic layers 21 and 22 separated by Ru of the nonmagnetic intermediate layer 23 show typical ferromagnetic coupling. Turned out to be independent.

[Embodiment 5] This embodiment is the same as the embodiment 4 described above, except that the nonmagnetic intermediate layer 23 of the fixed magnetic structure 2 has a Ru thickness of 0.2 nm (2 °). Sample 6 having the same configuration as that of Example 4 was produced. Then, the sample 6 was subjected to a heat treatment in a magnetic field described later.

[Embodiment 6] In this embodiment, the second ferromagnetic layer 22 of the nonmagnetic intermediate layer 23 of the pinned magnetic structure 2 is replaced with the 1.1 nm NiFe
A sample 7 having the same configuration as that of the example 5 except that the configuration was used was prepared. Then, the sample 7 was subjected to a heat treatment in a magnetic field described later.

The samples 6 and 7 and the sample 3 described above were subjected to the heat treatment in the magnetic field, and the samples were subjected to the heat treatments in the magnetic field of 265 ° C., 280 ° C., 295 ° C., and 310 ° C., respectively. , The MR ratio MR ratio and the interlayer coupling magnetic field Hf are measured, and these M
The temperature dependence of the R ratio and Hf was measured. The measurement results are shown in FIG. 9 and FIG. In FIGS. 9 and 10, a circle plots the measurement results for sample 6, a black circle plots the measurement results for sample 7, and a triangle plots the measurement results for sample 3. According to FIG.
Sample 3 using a single layer of CoFe as fixed magnetic structure 2
It can be seen that the deterioration of the MR ratio due to the temperature rise of the samples 6 and 7 is suppressed and the thermal deterioration is small as compared with Also,
Comparing Sample 6 with Sample 7, Sample 7 in which the second ferromagnetic layer 22 was NiFe was slightly different from Sample 8 in which the first and second ferromagnetic layers 21 and 22 were CoFe. Although it drops, there is not much difference between them.

According to FIG. 10, the non-magnetic intermediate layer 2
Compared to the sample 3 without the sample 3, the sample 6 and the sample 7 each provided with the nonmagnetic intermediate layer 23 made of Ru have improved temperature dependency. The sample 7 in which the second ferromagnetic layer 22 on the side joined to the ordered antiferromagnetic layer 1 is made of NiFe is compared with the sample 6 in which the second ferromagnetic layer 22 is made of CoFe. It can be seen that thermal degradation can be improved.

From these facts, when the nonmagnetic intermediate layer 23 of the fixed magnetic structure 2 is made of Ru, the second ferromagnetic layer 22 joined to the ordered antiferromagnetic layer 1 is made of H
Regarding f, it is advantageous to use NiFe from the controllability of the bias point due to the increase in Hf.

As described above, the magnetoresistive film according to the present invention has a magnetoresistance ratio MR ratio and an interlayer coupling magnetic field Hf.
Is reduced, that is, heat resistance is improved.

In each of the above examples, the substrate 12 is disposed on the free magnetic layer portion 4 side. Needless to say, the configuration in which the substrate 12 is disposed on the regular antiferromagnetic layer side is adopted. You can also.

As described above, the magnetoresistive film according to the present invention can improve the MR ratio and improve the heat resistance. When configured as a magnetic sensing part in a reproducing head or the like, high reproducing sensitivity can be obtained.

One embodiment of the magnetic reading sensor according to the present invention will be described with reference to FIG. In this example, the magnetic read sensor according to the present invention, that is, a combined configuration of a read / write head having a magnetoresistive read head RH and an inductive thin film write head WH is exemplified. Alternatively, a configuration using only the reproducing head may be adopted.

In the example shown in FIG. 2, on the substrate 12 made of a magnetic material, if it is conductive, the insulating layer 32
The magneto-sensitive portion 31 is formed by the magnetoresistive effect film 11 according to the present invention via. Electrodes 33 are provided at both ends of the magnetic sensing portion 31.
And a magnetic substrate 34 is further bonded thereon via an insulating layer 32 to form a spin valve type magnetoresistive read head RH.

On the magnetic substrate 44, if it has conductivity, a lower magnetic core 35 of a magnetic layer is similarly formed via an insulating layer 32, for example, and a thin film is formed on the lower magnetic core 35 via an insulating layer, for example. A coil 32 is formed, and an upper magnetic core 37 of a magnetic layer is formed on the coil 32 via an insulating layer. The front ends of the magnetic cores 35 and 37 are opposed to each other via a nonmagnetic layer having a required thickness to form a magnetic gap g. Also, the upper magnetic core 37 is located behind the lower magnetic core 3 at the center of the thin film coil 32.
5, the lower magnetic core 35 and the upper magnetic core 37 form a closed magnetic path in which a magnetic gap g is formed, thereby forming an inductive thin film recording head WH.

The magnetic sensing part 31 and the magnetic gap g are formed facing a surface or a surface facing a magnetic recording medium (not shown) for performing magnetic recording and reading.

In the magnetic reading sensor according to the present invention, in this example, the magnetic head, particularly the reproducing head, the magneto-sensitive portion 31 is constituted by the magnetoresistive film 11 having a high MR ratio and excellent heat resistance. Therefore, it is possible to form a head having excellent reproduction sensitivity and stable reproduction characteristics even at a high temperature during the manufacture of the head or in a use state thereafter.

In the above-described example, a composite head in which a thin-film recording magnetic head is integrated is configured. However, a configuration using a reproducing head alone or a reproducing head for a magnetic recording medium is possible. Instead, the present invention can be applied to a magnetic reading sensor that performs various types of magnetic detection.

[0043]

As described above, according to the spin valve type magnetoresistive effect film using the ordered antiferromagnetic layer according to the present invention, compared with the conventional fixed magnetic structure composed of a single-layer film, This has the effect of suppressing deterioration due to heat treatment. Therefore, controllability of manufacturing conditions is facilitated by increasing the degree of freedom of the heat treatment process. Further, since the reduction in the MR ratio due to the heat treatment can be suppressed well, the magnetic read sensor according to the present invention, such as a read magnetic head, using this magnetoresistive film as a magnetically sensitive portion,
It is possible to constitute a highly reliable magnetic reading sensor having excellent sensitivity and stability.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view of an example of a magnetoresistive film according to the present invention.

FIG. 2 is a schematic perspective view of an example of a magnetic reading sensor according to the present invention.

FIG. 3 is a diagram showing a measurement result of a thickness of a Ta nonmagnetic intermediate layer of a fixed magnetic structure portion of a magnetoresistive effect film and a dependence of a magnetoresistance change rate (MR ratio) on a heat treatment temperature.

FIG. 4 is a diagram showing a measurement result of a dependency of a thickness of a nonmagnetic intermediate layer (Ta) of a fixed magnetic structure portion of a magnetoresistive effect film and a heat treatment temperature of an interlayer coupling magnetic field (Hf).

FIG. 5 is an MR of each example of the fixed magnetic structure of the magnetoresistive film.
It is a figure showing the result of having measured temperature dependence of a ratio.

FIG. 6 shows the Hf of each example of the fixed magnetic structure of the magnetoresistive film.
FIG. 9 is a diagram showing the results of measuring the temperature dependence of the slab.

FIG. 7 shows MR of each example of the fixed magnetic structure of the magnetoresistive film.
It is a figure showing the result of having measured temperature dependence of a ratio.

FIG. 8 shows Hf of each example of the fixed magnetic structure of the magnetoresistive film.
FIG. 9 is a diagram showing the results of measuring the temperature dependence of the slab.

FIG. 9 shows MR of each example of the fixed magnetic structure of the magnetoresistive film.
It is a figure showing the result of having measured temperature dependence of a ratio.

FIG. 10 shows H of each example of the fixed magnetic structure of the magnetoresistive film.
It is a figure showing the result of having measured temperature dependence of f.

[Explanation of symbols]

1 ... ordered antiferromagnetic layer, 2 ... fixed magnetic structure,
3 non-magnetic conductive layer, 4 free magnetic layer, 11
..Magnetoresistance effect film, 12 substrate, 13 base layer, 14 surface layer, 21 first ferromagnetic layer, 2
2 ... second ferromagnetic layer, 23 ... non-magnetic intermediate layer, 3
0, 34: magnetic substrate, 31: magnetic sensing part, 32
..Insulating layer, 33 ... electrode, 35 ... lower magnetic core, 36 ... thin film coil, 37 ... upper magnetic core,
41, 42: magnetic layer, 61: first crystalline ferromagnetic intermediate layer, 62: second crystalline ferromagnetic intermediate layer, RH
... Reproduction head, WH ... Recording head, g ...
・ Magnetic gap

Continued on the front page (72) Inventor Masafumi Takiguchi 6-35, Kita-Shinagawa, Shinagawa-ku, Tokyo Sony Corporation F-term (reference) 2G017 AA01 AB05 AB07 AC04 AD55 5D034 BA05 BA21 DA07 5E049 AA07 AA10 AC05 BA12 BA16 CB02 CC01 DB12

Claims (10)

[Claims] 1. A magnetoresistive film having an ordered antiferromagnetic layer, a fixed magnetic structure joined thereto, a nonmagnetic conductive layer, and a free magnetic layer having at least one magnetic layer. Wherein the pinned magnetic structure is a multilayer film structure including at least one set of three-layer structure of a first ferromagnetic layer, a non-magnetic intermediate layer, and a second ferromagnetic layer; And a magnetization direction of the second ferromagnetic layer includes a parallel component or a parallel component. 2. The method according to claim 1, wherein the ordered antiferromagnetic layer comprises PtMn, N
iMn, IrMn, PdMn, PdPtMn, RhMn
2. The method according to claim 1, wherein at least one of
3. The magnetoresistive effect film according to item 1. 3. The method according to claim 1, wherein the nonmagnetic intermediate layer is made of Ta, Ru, C
r, Rh, Ir, Au, Ag, Cu, Zr, Pt, M
2. The magnetoresistive film according to claim 1, wherein at least one of o and W is used. 4. The non-magnetic intermediate layer comprises a Ta layer,
2. The magnetoresistive film according to claim 1, wherein the average layer thickness is selected from 1 to 7 degrees. 5. The non-magnetic intermediate layer comprises a Ru layer,
2. The magnetoresistive film according to claim 1, wherein the average layer thickness is selected from 1 to 3 or 13 to 17 degrees. 6. A magnetic read sensor having a magnetically sensitive portion, wherein the magnetically sensitive portion includes at least one of a regular antiferromagnetic layer, a fixed magnetic structure bonded thereto, a nonmagnetic conductive layer, and a nonmagnetic conductive layer. A fixed magnetic structure portion comprising a first ferromagnetic layer, a non-magnetic intermediate layer, and a second ferromagnetic layer. A magnetic reading sensor having a multilayer structure including at least one set of three layers, wherein the first and second ferromagnetic layers are configured such that the magnetization directions thereof are parallel or include parallel components. 7. The method according to claim 1, wherein the ordered antiferromagnetic layer comprises PtMn, N
iMn, IrMn, PdMn, PdPtMn, RhMn
7. The method according to claim 6, wherein at least one of the following is used.
4. The magnetic reading sensor according to claim 1. 8. The method according to claim 1, wherein the nonmagnetic intermediate layer is made of Ta, Ru, C
r, Rh, Ir, Au, Ag, Cu, Zr, Pt, M
The magnetic reading sensor according to claim 6, wherein at least one of o and W is used. 9. The non-magnetic intermediate layer comprises a Ta layer,
7. The magnetic reading sensor according to claim 6, wherein the average layer thickness is selected to be 1 to 7 degrees. 10. The non-magnetic intermediate layer is made of a Ru layer, and has an average layer thickness of 1 ° to 3 ° or 13 ° to 17 °.
The magnetic reading sensor according to claim 6, wherein the magnetic reading sensor is selected from the group consisting of: