JP2000353655A - Position detecting mark, mark detecting device using the same, and aligner - Google Patents

Abstract

PROBLEM TO BE SOLVED: To shorten a process time, while restraining cost increase for high- accuracy alignment, related to a position detecting mark, a mark detecting device using it as well as an aligner. SOLUTION: Since a region 42z, where a first pattern 42x crosses with a second pattern 42y is blank, both a first axis direction and second axis direction are easily detected at the same time with the first and second patterns crossing each other, and since the crossing region is blank, effects of one pattern is reduced at the detection of the other pattern, for high-accuracy detection.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a position detecting mark used in an exposure step in the manufacture of, for example, a liquid crystal display device or a semiconductor device, a mark detecting device using the same, and an exposing device.

[0002]

2. Description of the Related Art When a liquid crystal display element or a semiconductor element is manufactured by using a photolithography technique, a reticle pattern is projected via a projection optical system onto a substrate coated with a photosensitive material on a stage. Exposure equipment is used. In general, a liquid crystal display element or the like is manufactured by forming a large number of circuit patterns on a substrate by superposing them. Need to be done with precision. For this purpose, for example, when exposing a second-layer circuit pattern on a photosensitive substrate, the first circuit pattern already formed on the photosensitive substrate is exposed.
It is necessary to perform high-accuracy alignment between the circuit pattern of the layer and the reticle on which the transfer circuit pattern for the second layer is formed.

[0003] One of the methods for aligning the photosensitive substrate is as follows.
There is an alignment method using image processing. This alignment method will be described in the following steps in a projection exposure apparatus for manufacturing a liquid crystal display element with reference to FIGS. First, a glass plate G shown in FIG.
P is placed on a Z stage (not shown) movable in the Z direction (vertical direction) by a glass plate transport system (not shown). At this time, the glass plate GP is placed with an error of about ± 2 mm with respect to the movement of the XY stage movable in the X direction and the Y direction (two horizontal directions orthogonal to each other). This error is positioned to about ± 50 μm by a mechanical method.

[0006] Next, as shown in FIG. 4, a position where a Y-direction detection alignment mark 30y previously formed on the glass plate GP will come under the plate alignment microscopes 16a and 16b (a plurality of marks are provided at the mark design positions). The XY stage (not shown) is moved to a position taking into account the imaging dimensions of the CCD by screen capture. At this time,
The alignment marks are arranged so that the alignment marks can be observed under at least two of the plate alignment microscopes 16a to 16d. If you can actually observe,
As shown in FIG. 4, there is almost no rotation error with respect to the movement of the XY stage of the glass plate GP.

Then, an image is input over a plurality of screens while the XY stage is stepped so that all the information of the Y-direction detection alignment mark 30y under the plate alignment microscopes 16a and 16b is taken into an image processing device (not shown). Thus, the reason that a plurality of screen inputs are required is that the alignment mark
If there are 10 μmL / S (line / space), the total length of the mark is about 190 μm. Further, when the number of pixels in the Y direction of the CCD is, for example, 480 and the size of one pixel in the Y direction is 7
μm, the CCD imaging area is 3360 μm (48
0 × 7), and when the magnification of the alignment optical system is, for example, 12 times, the dimension in the Y direction on the glass plate GP that can be imaged is 280 μm (3360/12). Strictly, it also depends on the configuration (performance) of the image signal digitizing unit inside the image processing apparatus.

On the other hand, since the position error of the alignment mark is about ± 50 μm with respect to the design value, a capture area of at least 290 μm (190 + 50 × 2) is required to capture the alignment mark by capturing one image. Therefore, the dimension becomes larger than the dimension in the Y direction on the glass plate GP of the CCD. Incidentally, in the X direction of the CCD, if the number of pixels in the X direction of the CCD is, for example, 640 and the size of one pixel in the X direction is 7 μm, the CCD
Assuming that the imaging area is 4480 μm and the magnification of the alignment optical system is 12 times, the dimension in the X direction on the glass plate GP which can be imaged is 373 μm.

[0007] Each of the plurality of two-dimensional images captured in this manner is converted into a primary image as shown in FIGS. 6 and 7 in the vertical direction (X direction) of the alignment of the Y-direction detection alignment marks 30y shown in FIG. The center of the mark is detected from the image (waveform) obtained by the original projection. As a detection method (algorithm), the obtained one-dimensional image shown in FIG. 7 is first-order differentiated as shown in FIG. 8, and the midpoint between the left and right peak values of the waveform is obtained.

[0008] plate alignment microscope 16a,
The rotation amount of the glass plate GP is obtained from the detection position of each Y-direction detection alignment mark 30y below 16b. The rotation angle θ is determined by the plate alignment microscope 16
a, 16b distance D, plate alignment microscope 16
a, the position detection result Ya of the Y direction detection alignment mark 30y under the position a, the Y under the plate alignment microscope 16b.
Position detection result Y of direction detection alignment mark 30y
Assuming that b, it can be obtained by the following equation. θ = tan ⁻¹ ((Ya−Yb) / D)

If the obtained rotation amount is equal to or more than a predetermined allowable value, the θ table is rotated by the rotation amount, and if the rotation amount is smaller than the allowable value, the rough alignment ends. When the θ table is rotated, the above processing is repeated until the θ table is within the allowable value or the specified number of times is executed.

Next, the plate alignment microscope 1
The XY stage is moved to a position where the X-direction detection alignment mark 30x will be located below 6c (a position in which a mark design position is added to an imaging dimension by taking in a plurality of screens). An image is input over a plurality of images while the XY stage is stepped so that all information of the alignment mark 30x for Y direction detection under the plate alignment microscope 16c is taken into the image processing apparatus, and the position in the X direction is obtained in the same manner as in the Y direction. . By the above processing, the position (X, Y) of the glass plate GP in the projection exposure apparatus can be roughly obtained.

After the rough alignment, one or more plate alignment microscopes are used to detect the mark positions of the plurality of alignment marks by using the same position detection method as that of the rough alignment.
Calculate (fine alignment) components such as P scaling, rotation, and shift components, and perform XY stage and
Feedback is provided to a reticle stage or the like.

[0012]

However, the above-mentioned conventional alignment means has the following problems. Conventionally, since the number of image capturing times is large, the processing speed is slow, and the plate alignment microscope 16a,
16b is acquired three times (two screens of plural acquisitions + one screen of confirmation (only one retry is necessary), and two times of acquisition for X-direction detection (two screens of plural acquisitions).
It is necessary to take in the number of times. The taking in of the plate alignment microscopes 16a and 16b is performed at the same time. Image capture is performed by a general CCD.
Since about 33 msec is required for one screen, it takes a total of 165 msec just to capture an image. In order to avoid this, it is conceivable to lower the magnification of the alignment optical system to further expand the field of view. However, in this case, there are two types of magnifications, rough and fine. Therefore, the cost is increased, and if a magnification switching mechanism is provided in the same optical system, the time required for the switching is also required, and the purpose of shortening the time required for the alignment is missed.
Further, if separate optical systems for low magnification and high magnification are provided to eliminate the magnification switching mechanism, the CCD and its peripheral parts are required twice, which also increases the cost.
Further, it is conceivable to provide a mark for rough alignment separately from the fine alignment, but it is not practical because it complicates processing and sequence.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and a position detecting mark capable of shortening a processing time and achieving high-precision alignment without increasing the cost, a mark detecting device using the mark, and an exposure method. It is intended to provide a device.

[0014]

The present invention has the following features to attain the object mentioned above. In other words, the position detection mark according to claim 1 is formed on a substrate (GP), and has a predetermined first axis direction and a second axis direction orthogonal to the predetermined first axis direction. A first pattern (42x) in which a plurality of linear marks (L1) are arranged in parallel in the first axial direction, wherein the first pattern is a mark (42) for detecting the position of the substrate; A second pattern (42y) in which a plurality of linear marks (L2) are arranged in parallel in the second axial direction, wherein the first pattern and the second pattern intersect each other; (42z)
Is used.

In the position detection mark, since the area (42z) where the first pattern (42x) and the second pattern (42y) intersect each other is blank, the first and second patterns are not used. Since they intersect with each other, it is easy to simultaneously detect the first axis direction and the second axis direction, and the intersection area is blank, so that when detecting one pattern, the influence of the other pattern can be reduced.

According to a fourth aspect of the present invention, the position detecting mark formed on the substrate has a first axial direction (X direction) and a second axial direction (Y direction) orthogonal thereto. 4. A mark detection device (MD) for detecting a position in a direction, wherein the substrate stage is provided with a substrate on which the position detection mark according to claim 1 is formed and is movable in a reference plane. (7) an image processing type mark detection system (19) for photoelectrically detecting the position detection mark when the substrate stage is stationary, and processing a detection signal detected by the mark detection system, A technology including an image processing device (20) for determining the position of the position detection mark in the first axis direction and the second axis direction is employed.

In this mark detecting device, the first to third aspects are described.
And an image processing type mark detection system (19) for photoelectrically detecting the position detection mark, and processing the detection signal detected by the mark detection system to obtain the first axis of the position detection mark. An image processing device (20) for determining the position in the direction and the second axial direction, so that the position detection mark can be photoelectrically detected, and the substrate can be detected at the position in the first and second axial directions determined by the image processing device. Can be detected in a short time.

In the exposure apparatus according to the fifth aspect, the mask (R)
An exposure apparatus for projecting and exposing an image of a pattern formed on a substrate (GP) coated with a photosensitive material via a projection optical system (PL), wherein the mark detection apparatus (MD) according to claim 4. For detecting the position of the substrate.

In this exposure apparatus, since the mark detecting device (MD) according to the fourth aspect is provided for detecting the position of the substrate (GP), the processing time for the alignment of the substrate can be reduced.

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a position detecting mark, a mark detecting apparatus and an exposure apparatus using the same according to the present invention will be described below with reference to FIGS.

FIG. 1 shows a projection exposure apparatus 1 provided with a mark detection apparatus MD according to the present embodiment.
Is an exposure apparatus for manufacturing a large liquid crystal display using image processing for alignment. In this projection exposure apparatus 1, exposure light emitted from a light source 2 such as an ultra-high pressure mercury lamp
After being condensed, the light enters the condenser lens system 4 via an optical integrator or the like.

The exposure light appropriately condensed by the condenser lens system 4 illuminates the reticle R with substantially uniform illuminance. The pattern of the reticle R is projected on the photosensitive substrate via the projection optical system PL, that is, onto each shot area on the glass plate (substrate) GP on which the photosensitive material is applied, by the exposure light. Thereafter, a large-sized liquid crystal display element is manufactured by sequentially exposing a plurality of layers of circuit patterns on the glass plate GP for exposure.

The glass plate GP is mounted on a Z stage 6
The Z stage 6 is held on the XY stage 7. The XY stage 7 is a glass plate GP
Is a plane perpendicular to the optical axis AX of the projection optical system PL (XY plane).
The Z stage 6 positions the glass plate GP in the optical axis AX (Z direction) of the projection optical system PL.
Incidentally, between the Z stage 6 and the glass plate GP,
A θ table for rotating the glass plate GP is provided. In the vicinity of the glass plate GP on the Z stage 6, a reference mark assembly 8 on which various alignment marks are formed is fixed. A movable mirror 9 for distance measurement in the X and Y directions is fixed near the reference mark assembly 8.

The movable mirror 9 is irradiated with a laser beam from a laser interferometer 10, and the position of the XY stage 7 is constantly measured by receiving the reflected light reflected by the mirror surface by the laser interferometer 10. . Drive device 11
Drives the XY stage 7 based on the coordinate values and the like measured by the laser interferometer 10.

When aligning the reticle R, the reticle alignment microscope 12 transmits the alignment light to the mirror 13.
Irradiates the alignment mark RM in the vicinity of the pattern area of the reticle R via the. The reflected light from the alignment mark RM is reflected by the mirror 13 and returned to the reticle alignment microscope 12. For example, the reticle R is aligned by adjusting the position of the reticle R based on the position of the image of the alignment mark RM re-imaged inside the reticle alignment microscope 12.

The alignment mark RM of the reticle R and the alignment mark in the reference mark assembly 8 on the Z stage 6 are simultaneously observed by the reticle alignment microscope 12, and the reticle R is aligned based on the positional relationship between the two images. You may. Further, the reticle alignment microscope 12 can simultaneously observe the alignment mark of the reticle R and the alignment mark on the glass plate GP to determine the positional relationship between the two.

The autofocus detection system includes a light transmitting system 14 and a light receiving system 15, and the light transmitting system 14 is a glass plate G
An image of a detection pattern such as a slit pattern is projected toward P obliquely with respect to the optical axis AX of the projection optical system PL. The image of the detection pattern is re-imaged in the light receiving system 15 by the reflected light of the image of the detection pattern. The height of the exposure surface of the glass plate GP is obtained from the positional deviation amount of the image of the re-formed detection pattern, and the height of the exposure surface of the glass plate GP is adjusted by the Z stage 6 to the best focus with respect to the projection optical system PL. The position has been set.

A mark detecting device MD having an alignment optical system for image processing beside the projection optical system PL.
Is arranged. The mark detection device MD uses a plate alignment microscope 16 as an alignment optical system to reflect light reflected from an observation area on the glass plate GP.
(16a, 16b) through the charge-coupled imaging device (CC
The image is focused on the imaging surface of a CCD camera (mark detection system) 19 using D), and an image of the pattern of the observation region is formed on the imaging surface. Reference numeral 17 denotes a mirror, 1
8 is a relay lens. A total of four systems from the plate alignment microscope 16 to the CCD camera 19 are provided around the projection optical system PL. All outputs from the CCD camera 19 are input to the image processing device 20.

As shown in FIGS. 2 and 3, an alignment mark (position detection mark) 42 is formed on the surface of the glass plate GP.
Is an X direction detection pattern (first pattern) 4 in which four linear marks L1 are arranged in parallel in the X direction (first axis direction).
2x and four linear marks L2 in the Y direction (second axis direction).
And a Y-direction detection pattern (second pattern) 42y arranged in parallel. In the X direction detection pattern 42x and the Y direction detection pattern 42y, a region 42z that intersects each other is blank.

The area 42z is set wider than the positioning error of the XY stage 7 on which the glass plate GP is mounted. That is, assuming that an error due to mechanical positioning in the XY stage 7 is about ± 50 μm, the width of the region 42z is set to be equal to or longer than the length obtained by adding the detection width to 100 μm.

The processing sequence of the rough alignment in the glass plate GP will be described in the following order of steps.

First, the glass plate GP placed on the Z stage 6 by a glass plate transport system (not shown) has an error of about 2 mm with respect to the running of the XY stage 7, but this error is mechanical. About 50μ
m. The XY stage 7 is moved to a position where an alignment mark 42 formed in advance on the glass plate GP will come under the plate alignment microscope 16 (a position where a mark detection position is added to an imaging dimension by taking in a plurality of screens). At this time, the alignment marks 42 are arranged so that the alignment marks 42 can be observed under at least two plate alignment microscopes 16.

An image of the alignment mark 42 under the plate alignment microscope 16 is captured by the image processing apparatus 20 in an image capturing field of view 40 as shown in FIGS. With respect to the two-dimensional image (unprocessed image) from each plate alignment microscope 16 captured at the same time, the alignment mark 42 is moved one-dimensionally in the X direction and the Y direction according to the X-direction one-dimensional projection window 41x and the Y-direction one-dimensional projection window 41y. Projection is performed, and the mark center is detected from the obtained image.

The detection method (algorithm) is such that the obtained one-dimensional image is first-order differentiated, and the midpoint between the left and right peak values of the waveform is obtained. Note that the position to be obtained is a linear mark L indicated by a “○” mark shown in FIGS.
1 and L2 (two positions in each direction in the rough alignment, but eight positions in the fine alignment, respectively). The width of the one-dimensional projection window in the projection direction is the alignment mark 4
2 is set from the center of the image capturing field of view 40 of the image processing device 20 so that even if a deviation of ± 50 μm, which is the maximum error in the above processing, does not affect the waveform after one-dimensional projection.

From the result of the above processing, the rotation amount of the glass plate GP is obtained. The rotation angle θ is the distance D between the two plate alignment microscopes 16 and the alignment mark 42 below one plate alignment microscope 16.
The Y direction position detection result Ya and the Y direction position detection result Yb of the alignment mark 42 under the other plate alignment microscope 16 can be obtained by the same formula as in the conventional example.

If the obtained rotation amount is equal to or more than the predetermined allowable value, the θ table is rotated by the rotation amount, and if the rotation amount is smaller than the allowable value, the rough alignment is terminated. When the θ table is rotated in the above processing, the processing from the above is repeated, and the processing is executed until the rotation falls within the allowable value or a specified number of times. Through the above processing, the position (X, Y) of the glass plate GP in the projection exposure apparatus 1 can be roughly obtained.

After the rough alignment, one or a plurality of plate alignment microscopes 16 are used to detect the mark positions of the plurality of alignment marks 42 using the same position detection method as the rough alignment, and the scaling of the glass plate GP is performed. , Rotation, shift components and the like are calculated (fine alignment) and fed back to the XY stage 7, a reticle stage (not shown), etc. at the time of exposure.

The detection accuracy of the rough alignment may be such that the alignment mark 42 can be almost captured at the center of the field of view of the plate alignment microscope 16 in the fine alignment. However, the detection accuracy of the fine alignment is a portion related to the quality of the exposure pattern. Therefore, high accuracy is required. Therefore, in the edge detection, all the mark edges are detected, and the mark center is obtained. Also,
By making the one-dimensional projection window larger than the width at the time of rough alignment, the contrast of the waveform after one-dimensional projection is improved, and a more accurate result can be expected.

As described above, the number of times of image capturing is two (the first one) by the plate alignment microscope 16.
Screen (no need to import multiple) + 1 screen for confirmation (Retry 1
Is unnecessary), and it is not necessary to separately perform acquisition for the X-direction detection as in the related art, and processing can be performed with a total of two acquisitions (the acquisition of each plate alignment microscope 16 is time-consuming). At the same time). As described above, in the present embodiment, it is possible to reduce the time for three image capturing operations as compared with the conventional example.

As described above, if the mark position in the X direction and the Y direction is detected by at least one plate alignment microscope 16 and the mark position in the X direction or the Y direction is detected by another plate alignment microscope 16, Rough alignment including rotation can be performed, the number of image captures can be reduced, and the total processing time can be reduced. Further, since the alignment mark 42 used for rough alignment uses a part of the mark shape inside the mark used for fine alignment, the optical system is not complicated, and a separate mark for rough alignment needs to be provided. Is eliminated, and the processing and the sequence can be simply configured.

Further, the alignment mark 42 includes an X direction detection pattern 42x and a Y direction detection pattern 42y.
Intersect each other in the region 42z, so that the X direction and the Y direction
The direction can be simultaneously detected by one plate alignment microscope, and since the intersection area 42z is blank, the influence of the other pattern can be reduced when detecting one pattern, and the detection accuracy can be improved by reducing the noise component at the time of detection. be able to.

The blank area 42z indicates the positioning error (± 50) of the θ stage on which the glass plate GP is mounted.
μm), a mechanical error due to the θ stage can be tolerated. Further, since the linear marks L1 and L2 of the X-direction detection pattern 42x and the Y-direction detection pattern are all arranged four each, at the time of rough alignment, detection is performed using only two linear marks. At the time of fine alignment, detection is performed using all four linear marks.
Alignment can be performed in a short time and with high accuracy.

The present invention also includes the following embodiments. In the above embodiment, the linear marks L1,
Two L2s are formed, but any number may be used as long as at least two or more L2s are provided. The exposure apparatus of the above embodiment can be applied to a proximity exposure apparatus that exposes a mask pattern by bringing a mask and a substrate into close contact with each other instead of a reticle without using a projection optical system. The application of the exposure apparatus is not limited to an exposure apparatus for a liquid crystal that exposes a liquid crystal display element pattern to a square glass plate, but may be, for example, an exposure apparatus for manufacturing a semiconductor or an exposure apparatus for manufacturing a thin film magnetic head. Widely applicable to equipment.

In this embodiment, the light source of the exposure apparatus is
g-line (436 nm), i-line (365 nm), KrF excimer laser (248 nm), ArF excimer laser (1
93 nm), an F2 laser (157 nm), or a light source having a shorter wavelength. Further, the present invention can be applied to an exposure apparatus using a charged particle beam such as an X-ray or an electron beam. For example, when an electron beam is used, the configuration of an exposure apparatus uses thermionic emission type lanthanum hexaborite (LaB6) or tantalum (Ta) as an electron gun, and the optical system at that time uses an electron lens and a deflector. Is used. The optical path through which the electron beam passes is in a vacuum state. The magnification of the projection optical system may be not only a reduction system but also an equal magnification and an enlargement system.

As a projection optical system, when far ultraviolet rays such as an excimer laser are used, a material that transmits the far ultraviolet rays such as quartz or fluorite is used as a glass material. When an F2 laser or X-ray is used, a catadioptric system or a refracting system is used. If the reticle is of a reflection type, an electron optical system including an electron lens and a deflector may be used as the optical system. It goes without saying that the optical path through which the electron beam passes is in a vacuum state.

A linear motor (USP 5,623,853 or USP 5,528,118) is mounted on a glass plate stage or a reticle stage.
), Any of an air levitation type using an air bearing and a magnetic levitation type using Lorentz force or reactance force may be used. The stage may be of a type that moves along a guide or a guideless type that does not have a guide.

The reaction force generated by the movement of the stage of the glass plate may be mechanically released to the floor (ground) using a frame member (as described in US Pat. No. 5,528,118). The reaction force generated by the movement of the reticle stage may be mechanically released to the floor (ground) using a frame member (as described in US S / N 416558).

As described above, the exposure apparatus of the present embodiment is
Each component (e) recited in the claims of the present application (claims)
It is manufactured by assembling various subsystems including lements) so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. In order to secure these various systems,
Before and after this assembly, adjustments to achieve optical accuracy for various optical systems, adjustments to achieve mechanical accuracy for various mechanical systems, and adjustments to achieve electrical accuracy for various electrical systems Adjustments are made. The process of assembling the exposure apparatus from various subsystems includes mechanical connections, wiring connections of electric circuits, and piping connections of pneumatic circuits among the various subsystems. It goes without saying that there is an assembling process for each subsystem before the assembling process from these various subsystems to the exposure apparatus. When the process of assembling the various subsystems into the exposure apparatus is completed, comprehensive adjustment is performed, and various precisions of the entire exposure apparatus are secured. It is desirable that the manufacture of the exposure apparatus be performed in a clean room in which the temperature, cleanliness, and the like are controlled.

In the semiconductor device, a step of designing the function and performance of the device, a step of manufacturing a reticle based on this design step, a step of manufacturing a wafer from a silicon material, and a step of forming a reticle pattern by the exposure apparatus of the above-described embodiment. It is manufactured through a step of exposing a wafer, a device assembling step (including a dicing step, a bonding step, and a package step), an inspection step, and the like.

[0050]

According to the present invention, the following effects can be obtained.
According to the position detection mark of the first aspect, since the area where the first pattern and the second pattern intersect each other is blank, the first and second patterns intersect in the first axial direction. And the second axis direction can be simultaneously detected, so that the processing time can be shortened, and since the intersection area is blank, the influence of the other pattern can be reduced when detecting one pattern, and the noise at the time of detection can be reduced. The detection accuracy can be increased by reducing the components.

According to the position detection mark of the second aspect, the blank area of the first pattern and the second pattern is set wider than the positioning error of the apparatus for mounting the substrate, Mechanical errors due to the device at the time can be tolerated.

According to the position detecting mark of the third aspect, at least four linear marks of the first pattern and the second pattern are arranged, so that at least two linear marks are provided. By performing rough alignment and using all four linear marks in fine alignment, alignment can be performed in a short time and with high accuracy.

According to the mark detecting device of the fourth aspect,
An image processing type mark detection system for photoelectrically detecting the position detection mark according to any one of claims 1 to 3, and a detection signal detected by the mark detection system, thereby processing the position detection mark. Since the image processing apparatus includes an image processing device that obtains the positions in the one axis direction and the second axis direction, the position detection mark can be photoelectrically detected, and the position of the substrate can be detected at the positions in the first and second axis directions obtained by the image processing device. The displacement can be detected in a short time.

According to the fifth aspect of the present invention, since the mark detecting device according to the fourth aspect is provided for detecting the position of the substrate, the processing time for the alignment of the substrate can be reduced, and the throughput can be improved. be able to.

[Brief description of the drawings]

FIG. 1 is an overall configuration diagram showing a position detection mark according to the present invention, a mark detection device using the same, and a projection exposure apparatus in an embodiment of an exposure apparatus.

FIG. 2 is a plan view showing an alignment mark visible in an image capturing field of view of an image processing apparatus without a rotation error in an embodiment of a position detection mark, a mark detection apparatus using the same, and an exposure apparatus according to the present invention. FIG.

FIG. 3 shows an embodiment of a position detection mark, a mark detection apparatus using the same, and an exposure apparatus according to the present invention, in which an alignment mark visible in an image capturing field of view of an image processing apparatus with a maximum rotation error is detected. FIG.

FIG. 4 is an arrangement conceptual diagram showing a positional relationship between a plate alignment microscope and an alignment mark on a glass plate in a position detection mark according to the present invention, a mark detection apparatus using the same, and a conventional example of an exposure apparatus.

FIG. 5 is a plan view showing a Y-direction detection alignment mark in a conventional example of a position detection mark, a mark detection apparatus using the same, and an exposure apparatus according to the present invention.

FIG. 6 is a graph showing an overall one-dimensional projection waveform of a Y-direction detection alignment mark in a position detection mark according to the present invention, a mark detection apparatus using the same, and a conventional example of an exposure apparatus.

FIG. 7 shows a partial (one line) one-dimensional projection waveform of a Y-direction detection alignment mark in a position detection mark according to the present invention, a mark detection apparatus using the mark, and a conventional example of an exposure apparatus. FIG.

FIG. 8 is a graph showing a first-order differentiated waveform of a partial one-dimensional projection waveform of a Y-direction detection alignment mark in a conventional position detection mark, a mark detection device using the same, and a conventional exposure apparatus according to the present invention. FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Projection exposure apparatus 7 XY stage (substrate stage) 19 CCD camera (mark detection system) 20 Image processing apparatus 42 Alignment mark 42x X-direction detection pattern 42y Y-direction detection pattern 42z Blank area GP glass plate (substrate) L1, L2 Linear mark MD Mark detector PL Projection optical system R Reticle (mask)

Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat II (Reference) H01L 21/30 502M 522B (72) Inventor Seiji Fujitsuka 3-2-3 Marunouchi, Chiyoda-ku, Tokyo Nikonai F Terms (reference) 2F065 AA04 AA07 AA12 AA14 AA17 AA23 AA24 BB02 BB28 CC17 DD06 FF01 FF04 FF55 GG04 HH05 HH12 HH13 JJ00 JJ03 JJ26 LL12 PP12 QQ31 2H097 GB01 KA03 KA12 KA13 KA13 KA13 KA13 KA13 KA15

Claims (5)

[Claims] 1. A position detection mark formed on a substrate for detecting a position of the substrate in a predetermined first axis direction and a second axis direction orthogonal to the predetermined first axis direction, wherein the position detection mark is provided in the first axis direction. A first pattern in which a plurality of linear marks are arranged in parallel; and a second pattern in which a plurality of linear marks are arranged in parallel in the second axial direction. The second pattern is a position detection mark in which areas that intersect each other are blank. 2. The position according to claim 1, wherein the blank areas of the first pattern and the second pattern are set wider than a positioning error of an apparatus for mounting the substrate. Mark for detection. 3. The position detecting mark according to claim 1, wherein at least four linear marks are arranged in each of the first pattern and the second pattern. 4. A mark detection device for detecting a position of a position detection mark formed on a substrate in a predetermined first axis direction and a second axis direction orthogonal thereto. A substrate stage mounted on a substrate on which a position detection mark is formed and movable within a reference plane; and an image processing mark for photoelectrically detecting the position detection mark when the substrate stage is stationary. A detection system, and an image processing device that processes a detection signal detected by the mark detection system to determine the position of the position detection mark in the first axis direction and the second axis direction. Mark detection device. 5. An exposure apparatus for projecting and exposing an image of a pattern formed on a mask onto a substrate coated with a photosensitive material via a projection optical system, wherein the mark detection device according to claim 4 is used for the substrate. An exposure apparatus provided for detecting the position of an object.