JP2000353304A - Manufacture of magnetic head - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide the method for manufacturing a magnetic head, capable of dealing with a high-density magnetic recording medium. SOLUTION: In the manufacturing method of a magnetic head for laminating lower and upper magnetic pole layers 5 and 9 via a gap layer 6 to constitute a magnetic gap, after the gap layer 6 is formed on the lower magnetic pole layer 5, a track width regulation mask patterned corresponding to a track width is disposed. Then, etching is performed up to the middle part of the lower magnetic pole layer 5 by using the track width regulation mask as a mask to regulate the track width of the lower magnetic pole layer 5, a non- magnetic material is deposited from the track width regulation mask so as to have a thickness protruding more than the surface of the gap layer 6, the track width regulation mask is eliminated, and the upper magnetic pole layer 9 is formed by depositing a magnetic material so as to cover a recess formed by the elimination of the track width regulation mask.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for manufacturing a magnetic head.

[0002]

2. Description of the Related Art In recent years, with the development of computers and the like,
Higher recording densities are also being promoted in magnetic recording media, and it is desired to increase the recording capacity and increase the data transfer rate by further improving the recording density.

For example, in the case of a hard disk, when the recording density of the hard disk drive exceeds 10 bits / inch 2, the track width of the magnetic head becomes, for example, 0.7 μm.
A size of less than m is considered essential. However, in such a magnetic recording head having a narrow track width, if the conventional lower pole has a flat shape, problems such as deterioration of efficiency and fringing occur, so that the magnetic head can cope with a high-density magnetic recording medium. Development of a shape is desired.

Therefore, in recent years, a thin film magnetic head having a magnetoresistive effect type magnetic head (hereinafter referred to as "MR head"), which is a magnetic head suitable for narrow tracks, has been adopted in order to promote high-density recording. It is becoming.

In this thin-film magnetic head, each functional film is formed in a predetermined shape by a thin-film forming means such as a so-called vacuum evaporation method or a sputtering method. Specifically, such a thin-film magnetic head is formed by thin-filming an MR head having a magnetoresistive effect element functioning as a magnetic sensing part during reproduction and an inductive head generating a recording magnetic field during recording.

FIG. 29 is a perspective view schematically showing a conventional thin film composite head for a hard disk. In these thin-film composite heads for hard disks, an MR element layer 4 for reading and reproducing information recorded on a magnetic recording medium is formed between an upper shield layer 30 and a lower shield layer 2 made of a ferromagnetic material. 4 and the upper shield 3 of the MR element layer 4
0 is used as a lower magnetic pole, and an inductive head 31 for recording information on a magnetic recording medium is formed.

[0007]

The thin-film composite head for a hard disk shown in FIG. 29 can be manufactured by a usual manufacturing method. Specifically, after the lower magnetic layer is formed, the gap layer is formed by sputtering, and thereafter, the insulating film (resist) and the coil are formed, and then the upper magnetic pole is formed. In this case, the coil forming portion has a thickness of about 10 μm, and a step occurs between the upper surface of the coil forming portion and the gap layer. The upper magnetic pole is formed from a portion where the coil is not formed to a portion where the coil is formed. The upper magnetic pole is formed by a conventional resist frame method of forming a plating frame. When the upper magnetic pole is formed by this method, the thickness of the resist is 7 to 8 at the track forming portion.
It becomes about μm. As described above, the resist thickness is 7 to 8 μm.
When it is about m, it becomes very difficult to form a plating frame of 1 μm or less. In particular, when the thickness is 0.5 μm or less, it is impossible to form a plating frame having a fine shape by optical exposure.

The thin film composite head for a hard disk formed by the resist frame method has a flat lower magnetic layer, an upper magnetic pole having a width equal to the track width, and a thickness of about 3 μm. In this case, when the upper magnetic pole is saturated during recording of information on the magnetic recording medium, the recording magnetic field starts to leak from the upper magnetic pole side near the gap of the upper magnetic pole, and the effective recording track width is increased. Will be lowered.

Therefore, a recording head having a track width of, for example, 0.7 μm or less cannot be manufactured by the conventional method due to the above-mentioned problems.

The present invention has been proposed in view of the conventional problems, and has as its object to propose a method of manufacturing a magnetic head which can cope with a high-density magnetic recording medium.

[0011]

SUMMARY OF THE INVENTION A method of manufacturing a magnetic head according to the present invention is a method of manufacturing a magnetic head in which a lower magnetic pole layer and an upper magnetic pole layer are stacked and formed with a gap layer therebetween to form a magnetic gap. After forming the gap layer on the lower magnetic pole layer, a track width regulating mask patterned corresponding to the track width is arranged, and the lower magnetic pole layer is etched by using this as a mask to an intermediate portion of the lower magnetic pole layer. A step of regulating a track width, a step of forming a non-magnetic material on the track width regulating mask so as to protrude from the surface of the gap layer, a step of removing the track width regulating mask, Forming a magnetic material so as to fill the recess formed by removing the width regulating mask,
Forming an upper magnetic pole layer.

In a method of manufacturing a magnetic head according to the present invention, after a gap layer is formed on a lower magnetic pole layer, a track width regulating mask patterned in accordance with a track width is arranged, and the lower magnetic pole layer is used as a mask. By etching to the middle part, the track width of the lower magnetic pole layer is regulated. Then, a non-magnetic material is formed on the track width regulating mask so as to protrude from the gap layer surface, and after removing the track width regulating mask, the recess formed by removing the track width regulating mask is filled. The upper magnetic pole layer is formed by depositing a magnetic material as described above. Therefore, when forming the magnetic head, the track width between the upper magnetic pole and the lower magnetic pole is reliably regulated, and the upper magnetic pole and the lower magnetic pole are surely aligned.

[0013]

FIG. 1 is a perspective view schematically showing a composite thin-film magnetic head to which the present invention is applied. FIG. 2 and FIG. 3 are cross-sectional views of main parts taken along lines X ₁ -X ₂ and X ₃ -X ₄ corresponding to the ABS plane position in FIG.

In the composite type thin film magnetic head to which the present invention is applied, a lower shield layer 2 is formed as an MR head on a substrate 1, and an MR layer is formed on the lower shield layer 2 via a first insulating layer. An element layer 4 and an electrode layer (not shown) are formed. Then, a second insulating layer 32 is formed to cover the MR element layer 4.

On the second insulating layer 32, a lower magnetic pole layer 5 is formed as an inductive head element. The lower magnetic pole layer 5 is formed by integrally forming a wide lower magnetic pole portion 51 formed on the substrate 1 side and a narrow lower magnetic pole portion 52 formed on the lower magnetic pole portion 51. And has the same width as the track width on the recording medium near the medium facing surface facing the recording medium. The lower magnetic pole layer 5 not only functions as a magnetic core of the inductive head element, but also has a function as a magnetic shield between the inductive head element and the MR head element. On the narrow lower magnetic pole portion 52 of the lower magnetic pole layer 5, a gap layer 6 having the same width as the track width is formed. A nonmagnetic high-hardness layer 11 is formed on the wide lower magnetic pole portion 51 of the lower magnetic pole layer 5. On the non-magnetic high hardness layer 11,
A third insulating layer 71 is formed, and the third insulating layer 71 has a depth end regulating surface BC that is inclined gradually higher from the tip on the gap layer 6 side to the rear side. The coil layer 8 is formed on the third insulating layer 71, and the fourth insulating layer 72 is formed so as to cover the coil layer 8.

The gap layer 6, the non-magnetic high-hardness layer 11, the third
The upper magnetic pole layer 9 is formed on the insulating layer 71 and the fourth insulating layer 72 of FIG.
Are formed. The upper magnetic pole layer 9 includes a first upper magnetic pole layer 91 formed on the gap layer 6 and the non-magnetic hard layer 11.
And a second upper magnetic pole layer formed on the first upper magnetic pole layer 91, the third insulating layer 71, and the fourth insulating layer 72 and connected to the wide lower magnetic pole portion 51 of the lower magnetic pole layer 5. 92
It is composed of

The first upper magnetic pole portion 91 is formed in a region extending from the medium facing surface to the depth end regulating surface AB of the non-magnetic high hardness layer 11, while the second upper magnetic pole portion 92 is formed in the first upper magnetic pole portion 91. It extends to the upper surface of the third insulating layer 71 and the fourth insulating layer 72 from the upper medium facing surface to the rear.

The first upper magnetic pole portion 91 has an end opposite to the medium facing surface and both ends in the track width direction from a connecting surface with the second upper magnetic pole portion 92 to a surface facing the gap layer 6. And has the same width as the track width on the recording medium in the medium facing surface. Thus, the information recording efficiency of the inductive head is improved.

The second upper magnetic pole portion 92 has a width near the medium facing surface that is wider than the track width on the recording medium.

The lower magnetic pole layer 5 of the lower magnetic pole layer 5 has a narrow width.
2, the lower magnetic pole portion 5 of the lower magnetic pole layer 5 is provided on both sides of the gap layer 6 and the first upper magnetic pole portion 91 in the track width direction.
1, a non-magnetic high-hardness layer 11 is formed, and the upper surface of the non-magnetic high-hardness layer 11 and the upper surface of the first upper magnetic pole portion 91 are respectively formed in a plane, and are flush with each other. Then, a protective layer 12 is formed so as to cover the second upper magnetic pole portion 92 of the upper magnetic pole layer 9.

Next, a method of manufacturing the composite type thin film magnetic head will be specifically described with reference to FIGS. In addition, in the drawings used in the following description, in order to clearly illustrate the features, the characteristic portions may be enlarged in some cases, and the dimensional ratio of each member is not necessarily the same as the actual one. . Also, in the actual manufacturing process, a number of magnetic head elements are formed on the substrate by thin film technology,
In the drawings used in the following description, portions corresponding to one magnetic head element are extracted and shown.

First, as shown in FIG. 4, a lower shield layer 2 and a lower insulating layer 3 are formed on a substrate 1 as an MR head element.
1. An MR element layer 4, an electrode layer (not shown), and an upper insulating layer 32 are sequentially formed. The above steps are based on conventional well-known steps.

Subsequently, as shown in FIG. 5 (the MR head element portion is omitted in the following drawings), the first insulating layer 3 is formed.
The lower magnetic pole layer 5 is formed on the entire surface of the substrate 2. As the lower magnetic layer 5, for example, CoZrNb is formed to a thickness of 3 μm by sputtering.

Next, a gap layer 6 is formed on the entire surface of the lower magnetic layer 5. As the gap layer 6, for example, Al
₂ O ₃ is formed to a thickness of 0.2 μm by sputtering.

Next, a spacer layer 13 for forming a track portion is formed on the entire surface of the gap layer 6. The spacer layer 13 is formed from the first spacer layer 1 from the gap layer 6 side.
4, the second spacer layer 15 and the third spacer layer 16. The spacer layer 6 is formed, for example, by depositing Ti to a thickness of 5 nm by sputtering to form a first Ti layer serving as the first spacer layer 14. Then, 300 n of Cu is deposited on the first Ti layer by sputtering.
A Cu layer as the second spacer layer 15 is formed by being applied to a thickness of m. Then, Ti is deposited on the Cu layer to a thickness of 5 nm by sputtering to form the third spacer layer 16.
Is formed as a second Ti layer.

The first spacer layer 14 functions to improve the adhesion between Al ₂ O _{3 as} the gap layer 6 and the second spacer layer 15 of the spacer layer 13. Also, the first
The spacer layer 14 is not limited to Ti, but may be any material that satisfies the above conditions. Specifically, Cr or the like can be used in addition to Ti.

The second spacer layer 15 is for providing a gap between the gap layer 6 and a mask layer 17 which is a mask for controlling the track width of the lower magnetic pole layer 5 and the upper magnetic pole layer 9 described later. is there. Specifically, before the track width of the first upper magnetic pole portion 91 is regulated, the track width of the first upper magnetic pole portion 91 is regulated by removing the second spacer layer 15 by wet etching using an etchant. A gap is provided between the gap layer 6 and a mask layer which is a mask for performing the process. The second spacer layer 15 is not limited to Cu, and may be any material that can be peeled off by wet etching using an acid or the like. However, between the lower magnetic pole layer 5, the second spacer layer 15, and the etching solution,
The etching solution needs to be combined so as to etch the second spacer layer 15 but not the lower pole layer 5. As a combination that satisfies the above conditions, specifically, for example, Cu or Permalloy is used for the second spacer layer 15, Enstrip 92 (manufactured by Meltex Corporation) is used for the etchant, and the lower magnetic layer is CoZrN
Combination using an amorphous metal such as b. The film thickness is 0.05 μm.
m to 1 μm is preferred.

The third spacer layer is a lower magnetic pole layer 5 described later.
And a role of improving the adhesion between the mask layer serving as a mask for regulating the track width of the upper magnetic pole layer 9 and the second spacer layer. The third spacer layer may be any material that satisfies the above conditions and can be etched by reactive ion etching, and specifically, Ti, Ta, or the like can be used.

Next, a mask layer 17 for forming a track portion is formed on the entire surface of the spacer layer 13. The mask layer 17 includes the first mask layer 17 and the second mask layer 17 from the spacer layer 13 side.
It is composed of two layers, that is, a mask layer 19. Mask layer 17
Is, for example, 1.5 μm of SiO ₂ by sputtering.
m, and the first mask layer 18 of SiO ₂
Form a layer. Then, on the SiO ₂ layer, for example, Cr is applied to a thickness of 70 nm to form the second mask layer 19 C
An r layer is formed.

The first mask layer serves as a mask for regulating the track width of the lower magnetic pole layer 5 and the upper magnetic pole layer 9 described later. The first mask layer may be any one that can be anisotropically etched by reactive ion etching or the like, and specifically, SiO ₂ or Al ₂ O ₃ can be used. The film thickness to be formed is 0.5 μm to 2.0 μm.
μm is preferred.

The second mask layer serves as a mask when the first mask layer is formed by reactive ion etching described later. The second mask layer only needs to be difficult to be etched when the reactive ion etching is performed, and specifically, Cr, CoZrNb, or the like can be used. The film thickness to be formed is 20 nm to 200 nm.
nm is preferred.

Next, as shown in FIG.
The substrate 1 on which the mask layer 17 is formed is, for example, about 300
While rotating at 0 rpm, a resist, for example, an electron beam resist 20 is applied on the Cr film by spin coating. The resist need not be an electron beam resist, but may be a normal resist.

Here, the electron beam resist 20 means that a polymer constituting the resist receives energy by collision with an electron and a part of a chain of the polymer is cut to reduce the molecular weight, or the other It refers to a polymer that combines with a polymer and is polymerized into a polymer having a large molecular weight. Further, it is preferable that the electron beam resist 20 is a positive resist in which a portion irradiated with the electron beam has increased solubility in a developing solution. Specifically, such a positive type electron beam resist 20 is, for example, a product name OE manufactured by Tokyo Ohka Kogyo Co., Ltd.
BR-1000 and trade name ZEP- manufactured by Zeon Corporation
520 (12) and the like. Further, it is preferable to perform pre-bake on the electron beam resist 20 before exposure. By performing the pre-bake, the electron beam resist 20
The sensitivity at the time of exposure is improved, and a fine pattern can be formed with high accuracy.

Next, as shown in FIG. 7, the electron beam resist 20 is drawn by irradiating the electron beam resist 20 with a predetermined pattern using an electron beam exposure apparatus.
A predetermined pattern latent image is formed therein. Specifically, an electron beam is applied to a portion to be a track forming portion, and the track forming portion is smaller than the square at the center of one side of the wide track forming portion having a rectangular shape as shown in FIG. It has a shape in which a narrow track forming portion having a rectangular shape is joined with the short side as a contact piece.

Next, as shown in FIG. 8, the electron beam resist 20 on which the pattern latent image has been formed is developed to form a mask pattern. When a positive resist is used as the electron beam resist 20, a portion of the resist that has not been irradiated with the electron beam remains to form a mask pattern.

Next, etching is performed using the mask pattern formed as described above as a mask, and the second mask layer 19 which is exposed from the mask pattern is Cr.
Remove the layer. The etching is performed by, for example, ion etching.

Subsequently, the electron beam resist 20 is peeled off.
As a result, a Cr layer as a second mask layer patterned into a predetermined shape as shown in FIG. 9 is obtained. Specifically, the pattern has a Cr layer that is the second mask layer 19 in a portion to be a track forming portion.

Next, as shown in FIG. 10, etching is performed using the Cr layer, which is the second mask layer 19 patterned as described above, as a mask, and the SiO ₂ film and the third The second spacer layer 16
And the upper layer 1 of the Cu layer as the second spacer layer 15
About 0 nm is removed. The etching is performed by reactive ion etching.

The gas used for etching is such that a polymer is unlikely to be generated on the surface of the SiO ₂ film layer due to the reaction between the Cr film and the etching gas. For example, CF ₄ , and optionally CF ₄ and oxygen are used. Is used. Further, in order to prevent the temperature of the substrate surface from rising, the etching power is set low. Specifically, a power of about 300 to 500 W (when using DEA506, a reactive ion etching apparatus manufactured by Anelva Co., Ltd.) is preferable. The etching time is about 50 to 60 minutes (reactive ion etching apparatus manufactured by Anelva Co., Ltd., DEA5
06 at 300 W).

Here, the first mask layer 18 of SiO ₂
Cr, which is the second mask layer 19 constituting the mask when the film is etched, is a material having a selectivity to reactive ion etching that is about 40 times or more as large as that of SiO ₂ . By using a mask made of a metal material having a selectivity to reactive ion etching of 40 times or more as compared with that of SiO ₂ , a track-shaped nonmagnetic film can be formed with high precision. As such a metal material, specifically, in addition to Cr, NiF
e, CoZrNb and the like. The reason why the selectivity to the reactive ion etching is set to 40 times or more is that the material having such a large selectivity is used as a mask so that the shape and pattern of the mask do not change until the etching is completed, and the desired shape and This is because a desired etching amount can be etched. In addition, by using a mask made of a material having high selectivity to reactive ion etching, the thickness of the mask can be reduced, so that cost can be reduced and production time can be reduced.

Next, as shown in FIG. 11, etching is performed using the mask pattern formed as described above as a mask, and the Cu layer and the first spacer layer 15, which are exposed from the mask pattern, are exposed. The Ti layer serving as the spacer layer 14 is removed. The etching is performed by, for example, wet etching. At this time, the etching solution contains, for example, C
An etchant used for wet etching u is used. The etching solution for wet etching Cu is Ti
This is because Al ₂ O ₃ forming the gap layer 6 is not etched. Further, the etchant is not limited to these, and the gap layer 6, the first spacer layer 14, the second spacer layer 15,
It can be changed as appropriate depending on the combination of materials used for the spacer layer 16. Here, in the track forming section 22, since the Cr layer of the second mask layer 19 and the SiO ₂ layer of the first mask layer 18 are present, the wide track forming section 23 is formed.
Is etched and only the lower portion of the narrow track forming portion 24 is etched to remove the Cu layer and the Ti layer of the spacer. The lower part of the narrow track forming portion 24 has a narrow width in the track width direction.
The Ti of No. 4, the Cu layer of the second spacer layer 15, and the Ti layer of the third spacer layer 16 are all removed. Therefore, in the narrow track forming section 24, as shown in FIG. 12, the SiO ₂ layer of the first mask layer 18 is separated from the Al ₂ O ₃ layer forming the gap layer 6, and the wide track is formed. The formation part 23 is suspended in the air as a support part. Thereby, a mask pattern for performing the etching in the next step is formed.

Next, as shown in FIGS. 13 and 14, etching is performed using the mask pattern formed as described above as a mask, and Al ₂ O ₃ which is the gap layer 6 exposed from the mask pattern is etched. The layer and the CoZrNb layer as the lower magnetic pole layer 5 are removed by a thickness of about 0.5 μm. Thus, the SiO ₂ layer is left only in the track forming section, SiO ₂ left on track forming section 24 of the narrow
The position of the layer ultimately forms the pole of the top pole of the inductive head element. The lower magnetic pole layer 5, ie, C
By removing the oZrNb layer by a thickness of about 0.5 μm, the wide lower magnetic layer portion 51 formed on the substrate 1 side is removed.
And a narrow lower magnetic layer portion 5 formed on the gap layer 6 side.
2 are integrally formed. The narrow lower magnetic layer portion 52 has the same width as the track width on the recording medium near the medium facing surface facing the recording medium, that is, near the boundary surface with the gap layer 6. . Etching is
For example, the etching is performed by ion etching using Ar gas, and the incident angle is set to 5 to 30 degrees. Thereby, it is possible to accurately etch to a desired shape and dimensions. Accordingly, the narrow lower magnetic layer portion 52 is inclined in a direction that spreads from the boundary surface with the gap layer 6 to the etching surface in two directions on both sides in the track width direction and three directions on the opposite side to the sliding surface. It has a shaped shape.

Next, as shown in FIGS. 15, 16 and 17, for example, Al ₂ O ₃ is deposited on the entire surface to a thickness of about 1 μm by sputtering to form the non-magnetic high-hardness layer 11. At this time, the sputtering is preferably performed by collimated sputtering. The collimating sputtering uses a high frequency (RF: Radio Frequency, hereinafter referred to as RF) magnetron apparatus, and a control plate for collimation in which a lattice filter of a predetermined size is provided between the substrate 1 and the target material 26. RF collimated sputtering performed by disposing 25 is preferable, and the incident angle of flying particles of alumina is preferably within 20 degrees. FIG. 27 shows a conceptual diagram of RF magnetron collimating sputtering. Further, as shown in FIG. 28, the collimating control plate 25
For example, stainless steel (SUS304) with a substrate thickness of 10 mm
A disk provided with a grid-like filter section 27 made of stainless steel (SUS304) having a thickness of 0.5 mm and having a pitch of 2.5 mm is provided at the center of a disk made of such a material. Thereby, the rotation of the film to the concave portion at the time of sputtering is improved, and it is possible to prevent the corner portion of the concave portion from being hollow.
Reliability to CSS (Contact Start Stop) can be improved.

Then, Al ₂ O _{3 as the} gap layer 6 on the narrow lower magnetic layer portion 52 and A
By joining l ₂ O ₃ , a guide for regulating the shape of the upper magnetic pole is formed. That is, in the track forming portion, there is a mask made of the Cr layer that is the second mask layer 19 and the SiO ₂ layer that is the first mask layer 18.
Al ₂ O ₃ is deposited in the gap below the narrow track forming portion 24 in which the Cu layer serving as the second spacer layer 15 and the Ti layer serving as the first spacer layer 14 have been etched by the wet etching described above. Never do.

The non-magnetic high-hardness layer 11 is separated from the boundary surface with the gap layer 6 in two directions on both sides in the track width direction and in three directions on the side opposite to the sliding surface. It has a shape inclined toward the spreading direction toward the upper surface. The non-magnetic high-hardness layer 11 is formed in a shape having an inclination in a direction spreading from both ends of the upper surface of the gap layer 6 in the track width direction to the upper surface of the non-magnetic high-hardness layer 11.
Thereby, the nonmagnetic high-hardness layer 11 is integrated with the gap layer 6, and a guide for regulating the shape of the upper pole layer 9 and the track width of the upper pole layer 9 is formed. The position of the upper magnetic pole is determined by using the mask made of the Cr film and the SiO ₂ film used when forming the lower magnetic pole, so that the alignment is reliably performed, and the track alignment between the upper magnetic pole and the lower magnetic pole is performed. No deviation occurs. Therefore, a head with little fringing can be manufactured.

Next, as shown in FIGS. 18 and 19, wet etching is performed, and a Cr film and a Si film used as a mask when RF ₂ collimating sputtering of Al ₂ O ₃ is performed.
The O ₂ film is removed. At this time, for example, an etchant used for wet etching of Cu is used as an etchant. The etching solution for wet etching Cu is C
This is because r and SiO ₂ can be etched, but Al ₂ O ₃ forming the non-magnetic hard layer and the gap layer is not etched. Further, the etchant is not particularly limited as long as it satisfies the above-described conditions.

There are two methods for forming the upper magnetic pole thereafter, and the first method is as shown in FIGS.
The third insulating layer 71 is formed by a well-known process.
After the coil layer 8 is formed on the insulating layer 71 of FIG.
And a fourth insulating layer 72 is formed by plating or the like.
At this time, since the track width of the upper magnetic pole is already regulated in the above-described process, the plating width of the track portion of the upper magnetic pole may be 3 μm or more. Then, the protective film 12 is formed, and the medium facing surface is polished to complete the composite thin-film magnetic head.

In the second method, as shown in FIGS. 20 to 23, collimated sputtering or RF
For example, CoZrNb is formed as the upper magnetic pole material 21 by bias sputtering. Then, the upper magnetic pole material 21
Mechanical polishing is performed on the surface on which
An upper pole layer 91 is formed. Subsequent steps are, as shown in FIGS.
1 is formed, the coil layer 8 is formed on the third insulating layer 71, and then the fourth insulating layer 72 is formed to cover the coil layer 8 by plating or the like. At this time, since the track width of the upper magnetic pole is already regulated in the above-described process, the plating width of the track portion of the upper magnetic pole may be 3 μm or more. Then, a protective film 12 is formed, and the medium facing surface is polished,
Complete a composite thin-film magnetic head.

In the above description, a material mainly used in the dry process is selected for the two-layer mask in order to improve the track width accuracy. However, a positive resist for i-line is used for the mask and an antireflection film is used for the spacer. It is also possible.

Although the composite type thin-film magnetic head has been described above, the present invention is not limited to the above, and can be applied to various magnetic heads.

The present invention is not limited to the above, and can be appropriately changed without departing from the gist of the present invention.

[0052]

As described above, according to the method of manufacturing a magnetic head according to the present invention, the upper magnetic pole and the lower magnetic pole are formed with high precision even in a magnetic head having a narrow track width, and the upper magnetic pole and the lower magnetic pole are formed. Therefore, it is possible to manufacture a magnetic head compatible with a high-density magnetic recording medium.

[Brief description of the drawings]

FIG. 1 is a perspective view showing one configuration example of a composite thin-film magnetic head according to the present embodiment.

FIG. 2 is a sectional view showing an essential part of the composite thin film magnetic head of FIG. 1;

FIG. 3 is a sectional view showing an essential part of the composite thin film magnetic head of FIG. 1;

FIG. 4 is a diagram for explaining a method of manufacturing the composite thin-film magnetic head. As a MR head element, a lower shield layer, a first insulating layer, an MR element layer, an electrode layer, and a second insulating layer are formed on a substrate. FIG. 4 is a perspective view showing a state in which is formed.

FIG. 5 is a diagram for explaining a method of manufacturing the composite thin-film magnetic head, and is a perspective view showing a state in which a lower magnetic pole layer is formed on a first insulating layer.

FIG. 6 is a diagram for explaining the method of manufacturing the composite thin-film magnetic head, and is a perspective view showing a state where an electron beam resist is applied on a mask layer.

FIG. 7 is a diagram illustrating a method of manufacturing the composite thin-film magnetic head, and is a perspective view illustrating a state where a predetermined pattern latent image is formed in an electron beam resist.

FIG. 8 is a diagram illustrating a method of manufacturing the composite thin-film magnetic head, and is a perspective view illustrating a state where a mask pattern is formed by developing an electron beam resist.

FIG. 9 is a view for explaining the method of manufacturing the composite thin-film magnetic head, and is a perspective view showing a state where a Cr layer as a second mask layer is patterned into a predetermined shape.

FIG. 10 is a diagram for explaining a method of manufacturing the composite type thin-film magnetic head, in which a mask pattern of a Cr layer as a second mask layer is used as a mask, and a SiO ₂ layer as a first mask layer;
FIG. 9 is a perspective view showing a state where an upper layer of about 10 nm is etched as a second Ti layer as a third spacer layer and a Cu layer as a second spacer layer.

[Figure 11] is a diagram for explaining a method of manufacturing a composite thin film magnetic head, a Cr layer is SiO ₂ layer and the second mask layer is a first mask layer as a mask, Cu layer and a second spacer layer It is a perspective view showing the state where the 1st Ti layer which is the 1st spacer layer was etched.

FIG. 12 is a sectional view taken along line X ₁ -X ₂ in FIG. 11;

FIG. 13 is a diagram for explaining a method of manufacturing the composite thin-film magnetic head, wherein a gap layer is formed by using a SiO ₂ layer as a first mask layer and a Cr layer as a second mask layer as masks;
FIG. 5 is a perspective view showing a state in which a l ₂ O ₃ layer and a CoZrNb layer serving as a lower magnetic pole layer are etched to a thickness of about 0.5 μm.

FIG. 14 is a sectional view taken along line X ₃ -X ₄ in FIG. 13;

FIG. 15 is a view for explaining a method of manufacturing the composite thin-film magnetic head, and is a perspective view showing a state in which Al ₂ O _{3 as the} nonmagnetic high-hardness layer 11 is formed on the CoZrNb layer as the lower magnetic pole layer. is there.

FIG. 16 is a sectional view taken along line X ₅ -X ₆ in FIG.

FIG. 17 is a sectional view taken along line X ₇ -X ₈ in FIG.

FIG. 18 is a view for explaining the method of manufacturing the composite thin-film magnetic head, and is a perspective view showing a state where the SiO ₂ layer as the first mask layer and the Cr layer as the second mask layer are etched.

19 is a sectional view taken along line X ₉ -X ₁₀ in FIG. 18.

FIG. 20 is a diagram illustrating a method of manufacturing the composite thin-film magnetic head, and is a perspective view illustrating a state in which CoZrNb as an upper magnetic material is formed on the gap layer and the nonmagnetic high-hardness layer.

[21] In FIG. 20 is a sectional view of X ₁₁ -X ₁₂ line.

FIG. 22 is a diagram for explaining a method of manufacturing the composite thin-film magnetic head, in which CoZrNb having an upper magnetic material on a gap layer;
It is a perspective view which shows the state in which was formed.

23 is a sectional view taken along line X ₁₃ -X ₁₄ in FIG. 22.

FIG. 24 is a view for explaining the method of manufacturing the composite thin-film magnetic head, and is a perspective view showing a state where a third insulating layer, a fourth insulating layer, a coil layer, and an upper magnetic pole layer are formed.

FIG. 25 is a diagram illustrating the method for manufacturing the composite thin-film magnetic head, and is a perspective view illustrating a state where the protective layer is formed.

FIG. 26 is a diagram for explaining the method of manufacturing the composite thin-film magnetic head, and is a perspective view showing a state where a surface serving as a sliding surface with the magnetic recording medium is polished.

FIG. 27 is a diagram illustrating the concept of collimated sputtering.

FIG. 28 is a top view showing a collimating control plate.

FIG. 29 is a perspective view showing a composite thin-film magnetic head manufactured by a conventional manufacturing method.

[Explanation of symbols]

1 substrate, 5 lower magnetic pole layers, 51 wide lower magnetic pole layers,
52 Narrow lower pole layer, 6 gap layer, 9 upper pole layer, 13 spacer layer, 14 first spacer layer, 15
Second spacer layer, 16 Third spacer layer, 17 mask layer, 18 First mask layer, 19 Second mask layer

Claims (10)

[Claims] 1. A method of manufacturing a magnetic head, comprising: forming a lower magnetic pole layer and an upper magnetic pole layer via a gap layer to form a magnetic gap, comprising: forming a gap layer on the lower magnetic pole layer; A step of arranging a track width regulating mask patterned corresponding to the width, and using the mask as a mask to etch the middle of the lower magnetic pole layer to regulate the track width of the lower magnetic pole layer; A step of forming a non-magnetic material to a thickness that protrudes from the gap layer surface, a step of removing the track width regulating mask, and a step of filling the recess formed by removing the track width regulating mask. Forming a material and forming an upper pole layer. 2. The method according to claim 1, wherein the track width regulating mask is formed of a multilayer film, and a spacer layer in contact with the gap layer is removed by dissolution during patterning so as to be separated from the gap layer. A method for manufacturing a magnetic head. 3. The method according to claim 2, wherein the multilayer film has a two-layer structure of a first mask layer and a second mask layer from the lower pole layer side. 4. The method according to claim 3, wherein the first mask layer is made of SiO ₂ . 5. The method according to claim 3, wherein the second mask layer is made of Cr. 6. The method according to claim 2, wherein the spacer layer has a multilayer structure. 7. The magnetic head according to claim 2, wherein the spacer layer has a three-layer structure of a first spacer layer, a second spacer layer, and a third spacer layer from the lower pole layer side. Manufacturing method. 8. The method according to claim 7, wherein the first spacer layer is made of Ti. 9. The method according to claim 7, wherein the second spacer layer is made of Cu. 10. The method according to claim 7, wherein the third spacer layer is made of Ti.