JP2000331994A - Plasma processing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a plasma processing device in which particles producing during plasma processing of semiconductor wafer are hard to remain on the upper surface of the semiconductor wafer. SOLUTION: This plasma processing device for processing a semiconductor wafer 13 by a reactive gas converted into plasma is provided with a processing chamber, an outer peripheral ring 15 provided around the periphery of the semiconductor wafer arranged within the processing chamber, and a conductive member 16 which is provided in the outer peripheral ring 15 so as to allow particles floating on the upper surface of the semiconductor wafer to flow out outwardly in the radial direction of the semiconductor wafer to be processed without being blocked with a sheath generated on the surface of the outer peripheral ring.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus for converting a reactive gas into plasma to plasma-treat an object to be processed.

[0002]

2. Description of the Related Art Microfabrication plays an important role in, for example, a process for manufacturing an VLSI, and an etching technique is used as the microfabrication. That is,
The above-described etching technique is used as a method of transferring a fine photoresist pattern transferred by photolithography to a substrate such as a semiconductor wafer or a glass substrate for liquid crystal as an object to be processed.

[0003] There are two types of etching techniques, dry etching and wet etching. In recent years, dry etching that can realize anisotropic etching by selecting etching conditions has attracted attention.

[0004] The structure of a general apparatus used for dry etching has a processing chamber in which a substrate is accommodated, a reactive gas for etching is introduced into the processing chamber, and the reactive gas is supplied to a high frequency. Or activated by microwaves to form plasma, thereby generating active species such as halogen radicals and ions, and reacting the active species with a substrate mounted on a mounting table in the etching chamber. Etching is performed.

On the mounting table, the active species generated by the reaction gas being converted into plasma react with the substrate and are consumed, so that the concentration of the active species on the substrate decreases.

However, the reaction of the active species is less likely to occur at the peripheral portion of the substrate or outside thereof, or the reaction hardly occurs. Therefore, the concentration of the active species at the peripheral portion of the substrate is higher than that at the central portion of the substrate. It happens.
As a result, the reaction speed of the peripheral portion of the substrate is higher than that of the central portion, so that the surface to be processed of the substrate may not be uniformly processed over the whole.

Therefore, an outer peripheral ring made of the same material as that of the above-mentioned substrate is provided at the periphery of the substrate with a degree of reactivity to the reactive gas, and the reactivity of the active species at the periphery of the substrate is made substantially equal to that at the center. By doing so, it is considered that the surface to be processed of the substrate can be uniformly processed over the entire surface.

In this case, since the outer peripheral ring is worn with use, it is effective to make the outer ring thicker than the substrate in order to use it for a long period of time.

In a plasma space, a plasma state cannot be maintained around a conductor such as a substrate or an outer ring, and a sheath (charge layer) is formed. It is known that the thickness of this sheath increases as the potential of the conductor increases.

As shown in FIG. 15, sheaths 1a and 1b are formed on the upper surface of a substrate 1 which is a conductor and an outer peripheral ring 2 which are provided in a plasma space. And
When the thickness of the outer peripheral ring 2 is larger than the thickness of the substrate 1, the outer peripheral ring 2 is formed on the surface of the outer peripheral ring 2 more than the height of the sheath 1a formed on the surface of the substrate 1 according to the difference in the thickness dimension. The height of the sheath 2a increases.

As a result, particles P generated in the processing chamber during the etching process and floating on the upper surface of the substrate 1 collide with the sheath 2a formed on the upper surface of the outer peripheral ring 2 and are rebounded in the direction of the arrow. Since it is prevented from flowing outward in the radial direction of the outer peripheral ring 2, the probability of adhering to the upper surface of the substrate 1 may be increased. That is, the particles may not be removed by the sheath 2a formed on the upper surface of the outer peripheral ring 2 and may cause contamination of the substrate 1, or the particles may act as a mask and uniform etching may not be performed.

[0012]

As described above, in order to uniformly perform the plasma processing on the entire surface of the object to be processed, it is considered that an outer peripheral ring is provided at a peripheral portion of the object to be processed. I have. In that case, it is effective in practice to make the outer ring thicker than the thickness of the object to be processed and to extend the service period, but if the outer ring is made thicker, the difference in the thickness is reduced. Accordingly, the sheath formed on the upper surface of the outer peripheral ring is higher than the sheath formed on the upper surface of the workpiece.

As a result, the particles floating on the upper surface of the processing object collide with the sheath formed on the upper surface of the outer peripheral ring, and are less likely to be discharged radially outward of the outer ring. It can adhere and cause contamination.

According to the present invention, even if an outer peripheral ring is provided on the periphery of the object, particles floating on the upper surface of the object are easily discharged without being blocked by the sheath formed on the upper surface of the outer ring. It is another object of the present invention to provide a plasma processing apparatus.

[0015]

According to a first aspect of the present invention, there is provided a plasma processing apparatus for performing plasma processing on an object to be processed by a plasma-converted reactive gas, a processing chamber accommodating the object to be processed, An outer peripheral ring provided in the peripheral portion of the object to be installed installed in the chamber, and particles floating on the upper surface of the object provided in the outer peripheral ring are not blocked by the sheath generated on the surface of the outer ring. And discharge means for causing the particles to flow outward in the radial direction of the object to be processed while controlling the temperature.

Accordingly, the particles floating on the upper surface of the object to be processed are discharged radially outward from the upper surface of the object to be processed by the discharging means, so that it is possible to reduce stagnation and adhesion to the upper surface of the object to be processed. Is done.

According to a second aspect of the present invention, in the first aspect of the present invention, the outer peripheral ring is made of a material having substantially the same degree of reactivity with the reactive gas as that of the object to be processed, and has a greater thickness dimension than the object to be processed. The discharge means is formed by a conductive member formed of a material having higher conductivity than the outer peripheral ring and provided along a radial direction of the outer peripheral ring.

As a result, the potential at the location where the conductive member is provided is reduced and the thickness of the sheath is reduced, so that the particles floating on the upper surface of the object to be processed are easily discharged from that location.

According to a third aspect of the present invention, in the second aspect of the present invention, the width dimension of the conductive member is at least half the thickness of a sheath formed on the upper surface of the workpiece. And

Thus, a portion where the thickness of the sheath is reduced can be secured with a sufficient width on the upper surface side of the outer peripheral ring, so that particles floating on the upper surface of the object to be processed can be satisfactorily discharged from the portion. become.

According to a fourth aspect of the present invention, in the first aspect of the present invention, the outer peripheral ring is made of a material having substantially the same degree of reactivity with respect to the reactive gas as that of the object to be processed, and has a greater thickness than the object to be processed. The discharge means is formed as a discharge groove formed along the radial direction of the outer peripheral ring.

As a result, a concave portion is formed in the sheath on the upper surface side of the outer peripheral ring in accordance with the depth of the discharge groove, so that the particles floating on the upper surface of the object to be processed are discharged well from that portion. Will be.

According to a fifth aspect of the present invention, in the fourth aspect of the present invention, the width dimension of the discharge groove is at least one fourth of the thickness of the sheath formed on the upper surface of the workpiece. And

Thus, the width of the recessed portion of the sheath on the upper surface side of the outer peripheral ring can be sufficiently ensured, so that the particles floating on the upper surface of the object to be processed can be satisfactorily discharged from the portion. Become.

[0025]

Embodiments of the present invention will be described below with reference to the drawings.

FIGS. 1 to 3 show a first embodiment of the present invention. The plasma processing apparatus of the present invention shown in FIG. A mounting table 12 is provided in the processing chamber 11.
A semiconductor wafer 13 as an object to be processed to be subjected to plasma processing, for example, etching processing, is held on the upper surface of 2. The semiconductor wafer 13 is placed on the mounting table 12
For example, an electrostatic chuck or the like is used as a means for holding on the upper surface of the device.

The mounting table 12 is electrically insulated from the processing chamber 11, and the mounting table 12
Is connected to a high-frequency power supply 14 via an introduction cable 14a. The mounting table 12 is a He (not shown).
It is designed to be cooled by a cooling mechanism.

An outer peripheral ring 15 is provided around the semiconductor wafer 13 on the upper surface of the mounting table 12 so as to surround the outer peripheral surface at a predetermined interval. The outer peripheral ring 15 is made of a material such that the degree of reactivity with respect to the etching gas is substantially the same as that of the semiconductor wafer 13 when the semiconductor wafer 13 is subjected to an etching process by using an etching gas which is a reactive gas converted into plasma.
It is formed by iO ₂ .

As a result, not only the semiconductor wafer 13 but also the outer peripheral ring 15
Therefore, the degree of decrease in the concentration of the active species contained in the etching gas is substantially the same in the central portion and the peripheral portion of the semiconductor wafer 13, and the upper surface of the semiconductor wafer 13 is substantially uniformly etched throughout. Will be. In other words, when the outer peripheral ring 15 is not provided, the degree of reaction in the peripheral portion of the semiconductor wafer 13 is higher than that in the central portion.

The outer peripheral ring 15 is consumed by a reaction with an etching gas during use. Therefore, the thickness dimension is formed sufficiently thicker than the thickness of the semiconductor wafer 13 so that the semiconductor wafer 13 can be used for a long time.

As shown in FIGS. 1 (a) and 1 (b), the outer peripheral ring 15 has a stepped portion 15a on the inner peripheral portion with which the peripheral portion of the semiconductor wafer 13 is engaged, and further has a circumferential direction on the upper surface. A plurality of buried grooves 15b are formed at a predetermined depth at intervals of 90 degrees and communicate with the radially inner and outer peripheral surfaces. A conductive member 16 made of a material having a higher conductivity than the material forming the outer ring 15, for example, aluminum or the like is buried in each buried groove 15b. The width of the conductive member 16 is set to be at least half the thickness of the sheath formed on the upper surface of the semiconductor wafer 13 during etching.

Note that the semiconductor wafer 13 may be directly mounted on the mounting table 12 without forming the step 15a on the outer peripheral ring 15.

On the other hand, the upper wall 11 of the processing chamber 11
An etching gas introduction passage 17 is formed in a.
The introduction path 17 has one end communicating with the internal space of the processing chamber 1 and the other end open to the outside. One end of a gas supply pipe 18 is connected to the other end of the introduction path 17, and the other end is connected to an etching gas supply source 19. Therefore, an etching gas can be supplied from the introduction path 17 into the processing chamber 11.

On the inner surface side of the upper wall 16, the introduction path 1 is provided.
There is provided a nozzle plate 21 having a nozzle hole 21a for uniformly dispersing the etching gas supplied from the nozzle 7 into the processing chamber 11.

An exhaust pipe 2 is provided at the bottom of the processing chamber 11.
2 is connected to one end, and the other end is connected to the exhaust pump 23. Thereby, the inside of the processing chamber 11 can be decompressed.

On the upper and outer peripheral portions of the processing chamber 11, magnets 24 of several thousands Gauss are arranged. These magnets 24 can be rotated by driving means (not shown). Since the magnetic field can be rotated by rotating the magnet 24, the plasma generated in the processing chamber 11 can be rotated as described later to make the distribution state of the plasma uniform. .

Next, the case where the semiconductor wafer 13 is etched by the plasma processing apparatus having the above configuration will be described.

First, the periphery of the semiconductor wafer 13 is placed on the mounting table 12 by engaging the peripheral portion thereof with the step 15a of the outer peripheral ring 15.
Is placed. Although not shown, the semiconductor wafer 13 has a resist pattern formed on the upper surface.

After the semiconductor wafer 13 has been mounted on the mounting table 12, the evacuation pump 23 is operated to reduce the pressure inside the processing chamber 11 and to use O as an etching gas.
₂ , a mixed gas such as CF ₄ , CHF ₃ , and Ar is supplied from the supply source 19 into the processing chamber 11 through the gas supply pipe 18.

On the other hand, when the pressure in the processing chamber 11 is reduced to a predetermined pressure, a high frequency (RF wave) generated by the high frequency power supply 14 is introduced into the introduction cable 14a, so that the mounting table 12 and the nozzle Plasma is generated between the plate 21.

As a result, the etching gas supplied into the processing chamber 11 is excited and activated by the plasma, so that active species contained therein are extracted and collide with the upper surface of the semiconductor wafer 13, and the upper surface of the semiconductor wafer 13 collides with the active species. The portion of the oxide film exposed from the resist pattern is etched.

At the time of etching, the semiconductor wafer 13
Since the peripheral portion is surrounded by the outer peripheral ring 15 formed of a material having substantially the same degree of reaction to the etching gas, the consumption of the active species in the peripheral portion and the central portion of the semiconductor wafer 13 is substantially the same. Become. As a result, the upper surface of the semiconductor wafer 13 is etched at substantially the same rate in the central portion and the peripheral portion. That is, the upper surface of the semiconductor wafer 13 is substantially uniformly etched over the entirety.

At the time of etching, it is inevitable that particles adhere to the inner wall of the processing chamber 1 or the nozzle plate 21 due to peeling off. Then, the particles are prevented from being discharged from the upper surface of the semiconductor wafer 13 by the sheath formed on the upper surface of the outer peripheral ring 15 higher than the sheath formed on the upper surface of the semiconductor wafer 13. As a result, the particles may act as a mask on the upper surface of the semiconductor wafer 13 to hinder etching, or may adhere to the upper surface of the semiconductor wafer 13 and be brought to a subsequent process, adversely affecting the film forming process.

However, the outer peripheral ring 15 has
Formed with a material having higher conductivity than the semiconductor wafer 13
Provided conductive member 16 is provided. Therefore, FIG.
As shown in (a) and (b), the location of the conductive member 16
Of the outer ring 15 has a lower potential than other portions of the outer ring 15,
Of the sheath S₁The height of the sheath S at other points₂ To
It will be lower than that. In other words, the top surface of the outer ring 15 is
A groove of the sheath is formed at the position of the electrical member 16.

Therefore, the particles floating on the upper surface of the semiconductor wafer 13 are easily discharged from the groove of the sheath S ₂ formed on the upper surface of the outer peripheral ring 15 by the suction force of the discharge pump 23, and stay on the upper surface of the semiconductor wafer 13. Adversely affect the etching process,
Contamination of the semiconductor wafer 13 is prevented.

The width dimension of the conductive member 16 is shown in FIG.
As shown in, it is set to 1/2 or more of the thickness of the sheath S ₃ formed on the upper surface of the semiconductor wafer 13.
Thereby, it is possible to sufficiently ensure the width dimension of the groove of the sheath S ₂ formed on the upper surface of the peripheral ring 15, to perform the discharging of particles from the upper surface of the semiconductor wafer 13 efficiently has been confirmed experimentally.

FIGS. 4A and 4B show a modification of the outer peripheral ring 15A according to the second embodiment of the present invention. The outer peripheral ring 15A of this embodiment is configured by being divided into four arc-shaped divided pieces 31 and joining these divided pieces 31 in a ring shape via four conductive members 16a. That is, the conductive member 16 is provided over the entire length of the outer peripheral ring 15A in the thickness direction.

As in the first embodiment, each of the divided pieces 31 has a degree of reactivity to the etching gas with respect to the semiconductor wafer 1.
3 and the conductive member 16
a is the same in that it is formed of a material having higher conductivity than the semiconductor wafer 13.

The four conductive members 16a are provided at intervals of 90 degrees in the circumferential direction of the outer ring 15A, but the number is not limited.

FIGS. 5A and 5B show a case where an outer peripheral ring 15 having the same shape as that of the first embodiment shown in FIG. 1 is used, but an orientation flat 13a is formed on a semiconductor wafer 13. FIG. In such a case, the semiconductor wafer 13 is held on the outer peripheral ring 15 so that the orientation flat 13 a faces the conductive member 16.

As a result, even if the gap 32 formed between the orientation flat 13a of the semiconductor wafer 13 and the inner peripheral surface of the outer peripheral ring 15 becomes large, a groove of the sheath is formed at a portion facing the gap 32. Therefore, it is possible to prevent the particles from falling into the gap 32 and staying there.

The semiconductor wafer 13 has an orientation flat 13a.
In the case where a notch is formed instead of the semiconductor wafer 13, if the semiconductor wafer 13 is provided so that the notch faces the conductive member 16, it is possible to prevent particles from being trapped in that portion.

FIGS. 6 (a) and 6 (b) show a fourth embodiment of the present invention. In this embodiment, a hollow groove 33 is formed in an outer ring 15B so as to communicate with its inner and outer peripheral surfaces. The conductive member 16b is mounted thereon.

FIGS. 7A and 7B show a fifth embodiment of the present invention. In this embodiment, the entire outer peripheral ring 15C is formed of a material having higher conductivity than the semiconductor wafer 13. FIG. According to such a configuration, particles floating on the upper surface of the semiconductor wafer 13 can be discharged from the entire circumferential direction of the outer peripheral ring 15C.

FIGS. 8A, 8B and 9 show a sixth embodiment of the present invention.
Instead of providing the conductive member 16 in D, a discharge groove 35 was formed. The bottom surface 35a of the discharge groove 35 is formed to be lower than the upper surface of the semiconductor wafer 13 held by the step 15a of the outer peripheral ring 15D.

When the discharge groove 35 is formed in the outer peripheral ring 15D, the sheath S ₁ formed on the upper surface of the outer peripheral ring 15D is formed.
Portion S ₂ corresponding to the discharge groove 35 becomes lower groove than other parts of the. Therefore, since particles floating from the portion S ₂ of the groove of the sheath S ₁ on the upper surface of the semiconductor wafer 13 is discharged radially outward of the outer peripheral ring 15D, it is possible to prevent an adverse effect caused by the particles during etching .

Further, since the height of the bottom surface of the discharge groove 35 is formed lower than the height of the upper surface of the semiconductor wafer 13, the height of the bottom surface of the groove of the sheath S ₂ formed by the discharge groove 35 is sufficient. Can be lowered. Therefore, it is possible to efficiently discharge particles. Note that the bottom surface of the discharge groove 35 does not have to be lower than the upper surface of the semiconductor wafer 13, but it is clear that the lower the discharge surface, the more efficiently particles can be discharged.

As shown in FIG. 9, when the width W of the discharge groove 35 is set to a quarter or more of the height H of the sheath formed on the upper surface of the outer peripheral ring 15D, the semiconductor wafer 1
Experiments confirmed that particles floating on the upper surface of No. 3 can be efficiently discharged.

In the experiment, the surface was made of SiO₂1000A
Plasma processing of the semiconductor wafer 13 formed with a thickness of
The number of particles adhering to the surface was measured. Processing conditions are
O₂ / CH₄/ CF₄= 20/160 / 80scc
m, pressure 40mTorr, RF power 1400W semiconductor
The temperature of the wafer 13 is 25 ° C. and the processing time is 180 seconds.

In the case of the conventional type having no discharge groove in the outer peripheral ring, the diameter remaining on the upper surface of the semiconductor wafer 13 is 0.2
Although the number of particles having a size of μm or more was 50, FIG.
When the discharge groove 35 is formed as shown in FIG.
It was confirmed that the number was less than the number. That is, the width of the groove formed in the sheath on the upper surface of the outer peripheral ring 15D can be sufficiently ensured according to the width of the discharge groove 35, so that the above-described effects are considered to be obtained.

FIG. 10 shows a seventh embodiment of the present invention.
In this embodiment, the discharge groove 35a is formed so that the width dimension decreases from the inner peripheral side to the outer peripheral side of the outer peripheral ring 15E. FIG. 11 shows that the discharge groove 35b is formed along the peripheral direction of the outer peripheral ring 15F. It is turned into an arc shape, and with such a shape, the suction force of the discharge pump 23 can be strongly applied to the inner peripheral portions of the outer rings 15E and 15F.

In the sixth to eighth embodiments, when a notch 13b is formed on the semiconductor wafer 13 instead of the orientation flat 13a, the notch 13b is replaced with the discharge grooves 35a of the outer peripheral rings 15D, 15E, 15F. 35
If the semiconductor wafer 13 is placed so as to face the b and 35c, it is possible to prevent or reduce particles from being trapped in the notch 13b. The same applies to the case where the orientation flat 13a is formed on the semiconductor wafer 13 instead of the notch 13b.

FIGS. 12 to 14 show ninth to eleventh embodiments of the present invention. These embodiments are the same as the eighth embodiment in that a discharge groove 35 is formed in the outer peripheral ring 15. However, the ninth embodiment shown in FIG. The upper end corner on the side is formed in a circular arc portion 41.

In the tenth embodiment shown in FIG. 13, the upper end corner of the inner peripheral side of the outer ring 15 is also formed in a tapered portion 42 which is highly inclined radially outward, and the eleventh embodiment shown in FIG. In this embodiment, the entire upper surface of the outer peripheral ring 15 is formed on a tapered surface 43 that is inclined high toward the outside in the radial direction.

According to the ninth to eleventh embodiments, it has been experimentally confirmed that particles floating on the upper surface of the semiconductor wafer 13 are discharged from the portion of the outer peripheral ring 15 where the discharge groove 35 is not formed. confirmed. Therefore, the effect of discharging particles can be enhanced as compared with a case where only the discharge groove 35 is formed in the outer peripheral ring 15.

The round portion 41, the tapered portion 42, and the tapered surface 43 shown in the ninth to eleventh embodiments can be applied to the first to fifth embodiments in which a conductive member is provided on the outer peripheral ring. Of course.

[0067]

As described above, according to the present invention, the discharge means for discharging the particles floating on the upper surface of the object to be processed is provided on the outer peripheral ring provided at the peripheral portion of the object to be processed. .

As a result, particles are less likely to remain on the upper surface of the object to be processed, thereby preventing the particles from obstructing or contaminating the plasma processing of the object to be processed.

[Brief description of the drawings]

FIG. 1A is a plan view of an outer peripheral ring showing a first embodiment of the present invention, and FIG. 1B is a sectional view of the same.

FIG. 2 is a schematic configuration diagram of the plasma processing apparatus.

FIGS. 3A and 3B are explanatory views of a sheath formed on the upper surface of a semiconductor wafer and an outer peripheral ring, respectively.

FIG. 4A is a plan view of an outer peripheral ring showing a second embodiment of the present invention, and FIG. 4B is a sectional view of the same.

FIG. 5A is a plan view of an outer peripheral ring showing a third embodiment of the present invention, and FIG. 5B is a sectional view of the same.

FIG. 6 (a) is a plan view of an outer peripheral ring showing a fourth embodiment of the present invention, and FIG. 6 (b) is a sectional view thereof.

FIG. 7A is a plan view of an outer peripheral ring showing a fifth embodiment of the present invention, and FIG. 7B is a sectional view of the same.

FIG. 8A is a plan view of an outer peripheral ring showing a sixth embodiment of the present invention, and FIG. 8B is a sectional view of the same.

FIG. 9 is an explanatory view of a sheath formed on the upper surface of the outer peripheral ring.

FIG. 10 is a plan view of an outer peripheral ring according to a seventh embodiment of the present invention.

FIG. 11 is a plan view of an outer peripheral ring showing an eighth embodiment of the present invention.

FIG. 12 is a sectional view of an outer peripheral ring showing a ninth embodiment of the present invention.

FIG. 13 is a sectional view of an outer peripheral ring showing a tenth embodiment of the present invention.

FIG. 14 is a sectional view of an outer peripheral ring showing an eleventh embodiment of the present invention.

FIG. 15 is an explanatory view of a sheath formed on the upper surface of the outer peripheral ring and the semiconductor wafer when the discharge means is not provided on the outer peripheral ring.

[Explanation of symbols]

 11 processing chamber 15 outer ring 16 conductive member (discharge means) 35 discharge groove (discharge means)

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Osamu Yamazaki 33, Shinisogo-cho, Isogo-ku, Yokohama-shi, Kanagawa Prefecture Inside the Toshiba Production Technology Laboratory Co., Ltd. Inside the Toshiba Yokohama Office (72) Inventor Yukimasa Yoshida 8 Shinsugita-cho, Isogo-ku, Yokohama, Kanagawa Prefecture Inside the Toshiba Yokohama Office (72) Inventor Wang Lu Bin 1 Address Toshiba R & D Center (72) Inventor Isao Matsui 1 Koko Toshiba-cho, Yuki-ku, Kawasaki-shi, Kanagawa Prefecture Toshiba R & D Center (72) Inventor Toshimitsu Omine Sachi-ku, Kawasaki-shi, Kanagawa 1 Kuko Toshiba Town F-term in Toshiba R & D Center (Reference) 4K057 DA20 DB06 DD01 DE06 DE08 DE14 DE20 DM40 DN01 WA2 0 5F004 AA01 AA13 BA08 BB13 BB22 BB23 BB25 BB29 CA06 DA01 DA16 DA23 DA26 DB03 5F045 AA08 BB01 BB14 DP03 EB02 EB13 EC05 EF05 EG01 EG08 EJ10 EM05 EM05

Claims (5)

[Claims] 1. A plasma processing apparatus for plasma-processing an object to be processed by a plasma-converted reactive gas, comprising: a processing chamber for accommodating the object to be processed; An outer peripheral ring provided in a peripheral portion; and controlling the particles provided on the outer peripheral ring and floating on the upper surface of the object to be processed while controlling the particles to be blocked by a sheath generated on the surface of the outer peripheral ring. A plasma processing apparatus, comprising: discharge means for causing the fluid to flow radially outward. 2. The outer peripheral ring is formed of a material having a degree of reactivity to the reactive gas that is substantially the same as that of the object to be processed, and has a thickness greater than that of the object to be processed. 2. The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus is a conductive member formed of a material having higher conductivity than the ring and provided along a radial direction of the outer peripheral ring. 3. The plasma processing apparatus according to claim 2, wherein a width dimension of the conductive member is at least one half of a thickness of a sheath formed on an upper surface of the workpiece. 4. The outer peripheral ring is formed of a material having a degree of reactivity to the reactive gas that is substantially the same as that of the object to be processed and having a greater thickness dimension than the object to be processed. 2. The plasma processing apparatus according to claim 1, wherein the discharge groove is formed along a radial direction of the ring. 5. The plasma processing apparatus according to claim 4, wherein a width dimension of the discharge groove is at least one fourth of a thickness of a sheath formed on an upper surface of the workpiece.