JP2000321207A - Method for calibrating reactive sensor - Google Patents

Method for calibrating reactive sensor

Info

Publication number
JP2000321207A
JP2000321207A JP11130946A JP13094699A JP2000321207A JP 2000321207 A JP2000321207 A JP 2000321207A JP 11130946 A JP11130946 A JP 11130946A JP 13094699 A JP13094699 A JP 13094699A JP 2000321207 A JP2000321207 A JP 2000321207A
Authority
JP
Japan
Prior art keywords
reaction
gas
calibration
plasma
sensing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11130946A
Other languages
Japanese (ja)
Inventor
Motohiro Hashizaki
元裕 橋崎
Kazuto Watanabe
和人 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11130946A priority Critical patent/JP2000321207A/en
Publication of JP2000321207A publication Critical patent/JP2000321207A/en
Pending legal-status Critical Current

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  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

PROBLEM TO BE SOLVED: To easily maintain a detection level with improved reproducibility by adjusting the sensing level of emission intensity with a calibration gas and eliminating the scattering of sensing accuracy. SOLUTION: While the pressure of a reaction chamber 4 is reduced by exhaust 13 and plasma is generated, a valve 16 is opened and a calibration gas 12 is supplied from a gas introducing pipe 10 to the plasma. Then, emission intensity by the calibration gas 12 is measured by a sensing part 1, and the measurement value of the emission strength is compared with the measurement value of the sensing level by a control part 3. In this case, when the emission sensing intensity is weaker than a specific value, an application voltage to a photomultiplier is increased by a high-voltage power supply 17. Otherwise, the application voltage is decreased. The measurement is repeated and calibration is completed when the comparison result reaches a specific value or a specific range, thus easily calibrating the sensing level difference of emission intensity due to the operation time of a device and the difference in each device with improved reproducibility.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明はプラズマを用いて処
理を行う装置における反応検出器の校正方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for calibrating a reaction detector in an apparatus for performing processing using plasma.

【0002】[0002]

【従来の技術】プラズマを用いて処理を行う装置の反応
検出器は、反応室内のプラズマによる発光を反応室に設
けた窓より取出し、検出部に導入し、上記検出部に導入
された光の強度を計測することにより、反応の状態を検
出している。また、上記検出部は特定波長の光を透過さ
せるためのバンドパスフィルタと光電子増倍管で構成さ
れ、光電子増倍管への印加電圧を変更することで検出レ
ベルを校正している。
2. Description of the Related Art A reaction detector of an apparatus for performing processing using plasma takes out light emitted by the plasma in a reaction chamber through a window provided in the reaction chamber, introduces the light emission into a detection section, and detects the light introduced into the detection section. The state of the reaction is detected by measuring the intensity. Further, the detection section is composed of a band-pass filter for transmitting light of a specific wavelength and a photomultiplier, and the detection level is calibrated by changing a voltage applied to the photomultiplier.

【0003】反応室内部は反応生成物により汚れるた
め、上記発光の取り出し窓から取出せる光の強度は装置
の稼動に従い次第に低下する。上記汚染によるある程度
の透過光強度の低下は、光電子増倍管への印加電圧の調
整により校正することで対応することができる。また、
上記透過光強度の低下が一定限度を超えると反応室内の
掃除を行っている。
[0003] Since the inside of the reaction chamber is contaminated with reaction products, the intensity of light that can be extracted from the emission window for the light emission gradually decreases as the apparatus operates. The reduction in the transmitted light intensity to some extent due to the contamination can be dealt with by calibrating by adjusting the voltage applied to the photomultiplier tube. Also,
If the decrease in the transmitted light intensity exceeds a certain limit, the inside of the reaction chamber is cleaned.

【0004】ところで、複数の反応室を持つ装置におい
ては、反応室毎に、また反応検出器毎に、装置による機
差を光電子増倍管への印加電圧の調整により校正しなけ
ればならない。従来において、上記反応検出器の校正
は、調整用の試料を用いて実際に反応処理を行なわせ、
検出される発光強度のデータから光電子増倍管への印加
電圧の調整量を決定していた。
[0004] In an apparatus having a plurality of reaction chambers, it is necessary to calibrate the difference between the apparatuses for each reaction chamber and each reaction detector by adjusting the voltage applied to the photomultiplier tube. Conventionally, the calibration of the reaction detector is performed by actually performing a reaction process using a sample for adjustment,
The adjustment amount of the voltage applied to the photomultiplier was determined from the data of the detected light emission intensity.

【0005】[0005]

【発明が解決しようとする課題】前述のような複数の反
応室を持つ装置において、従来では反応室毎に複数の調
整用試料の準備が必要であった。しかも調整用試料のバ
ラツキが避けられず、これが検出レベルの校正のバラツ
キにつながり、精度管理が困難でもあった。
In an apparatus having a plurality of reaction chambers as described above, conventionally, it has been necessary to prepare a plurality of adjustment samples for each reaction chamber. In addition, the variation of the adjustment sample is inevitable, which leads to the variation of the calibration of the detection level, and the accuracy control is also difficult.

【0006】また、検出レベルの校正は測定データを基
に設定するため、設定結果をリアルタイムで確認するこ
とができなかった。そのため、調整用試料のバラツキ、
反応室、反応検出器の機差によるバラツキなどの微妙な
調整が困難であり、そのため検出レベルの維持、機差の
解消は困難であった。
Further, since the calibration of the detection level is set based on the measurement data, the setting result cannot be confirmed in real time. Therefore, variation of the adjustment sample,
It was difficult to make fine adjustments such as variations due to differences between the reaction chambers and reaction detectors, and thus it was difficult to maintain the detection level and eliminate the differences.

【0007】本発明の目的は、プラズマ処理装置におけ
る反応処理により発生したガスとプラズマによる発光を
検出部で検出し、検出した発光の強度から反応状態を検
知する反応検出器において、検出精度のバラツキを無く
し、容易に再現性よく検出レベルを維持できる反応検出
器の校正方法を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a reaction detector in which a detector detects gas and plasma generated by a reaction process in a plasma processing apparatus and detects a reaction state based on the intensity of the detected light emission. It is an object of the present invention to provide a method for calibrating a reaction detector that can easily maintain a detection level with good reproducibility.

【0008】[0008]

【課題を解決するための手段】上記目的を達成するため
に、本発明では反応室に検出レベル校正用のガス導入口
を設け、検出部の光電子増倍管の印加電圧を制御部によ
り調整することで、校正ガスとプラズマによる発光強度
を計測しながら光電子増倍管の印加電圧を調整する手段
を設けたことを特徴とする。
In order to achieve the above object, in the present invention, a gas inlet for calibrating a detection level is provided in a reaction chamber, and a voltage applied to a photomultiplier tube of a detection unit is adjusted by a control unit. Thus, a means is provided for adjusting the voltage applied to the photomultiplier while measuring the emission intensity of the calibration gas and the plasma.

【0009】[0009]

【発明の実施の形態】図1に本発明の実施態様を、図2
に本発明の校正方法のフローを示す。
FIG. 1 shows an embodiment of the present invention, and FIG.
2 shows a flow of the calibration method of the present invention.

【0010】図1の検出部1は光電子増倍管(図示せ
ず)と検出する波長を限定するためのバンドパスフィル
タ(図示せず)で構成する。反応室4内での発光の検出
ができるように、反応室窓14の近傍に光ファイバ18
の一端を設置し、他端を検出部1に設置して検出部1に
発光を導入する。判定部2は検出部1からの検出結果を
アナログまたはデジタル出力に変換して発光強度のデー
タを制御部3に出力する。
The detecting section 1 shown in FIG. 1 comprises a photomultiplier tube (not shown) and a band-pass filter (not shown) for limiting a wavelength to be detected. An optical fiber 18 is provided near the reaction chamber window 14 so that light emission in the reaction chamber 4 can be detected.
Is installed at one end, and the other end is installed at the detection unit 1 to emit light to the detection unit 1. The determination unit 2 converts the detection result from the detection unit 1 into an analog or digital output and outputs emission intensity data to the control unit 3.

【0011】制御部3は取り込んだ発光強度のデータよ
り、反応処理装置に対しては処理の制御を行い、反応検
出器に対しては高圧電源17で光電子増倍管への印加電
圧を調整し、検出レベルを校正する。
The control unit 3 controls the processing for the reaction processing device based on the data of the luminescence intensity taken in, and adjusts the voltage applied to the photomultiplier tube by the high voltage power supply 17 for the reaction detector. Calibrate the detection level.

【0012】上記反応処理においては、反応室4に被処
理物8を載置台9に載せ、排気13により反応室内を減
圧した状態に保つ。また、高周波電源5で発生した高周
波をマッチングボックス6で整合を取り、コイル7に印
加することで反応室内にプラズマ(図示せず)を発生さ
せる。
In the above-mentioned reaction process, the object 8 to be processed is placed on the mounting table 9 in the reaction chamber 4, and the pressure in the reaction chamber is kept reduced by the exhaust 13. Further, a high frequency generated by the high frequency power supply 5 is matched by a matching box 6 and applied to a coil 7 to generate plasma (not shown) in the reaction chamber.

【0013】反応処理は、弁15を開いてガス道入管1
0より反応ガス11を供給し、上記発生したプラズマに
反応ガス11を通すことで発生する活性ガスにより行わ
れる。この活性ガスと被処理物8との反応処理により発
生したガスは、プラズマにより発光し、検出部1で発光
強度を測定し、制御部3で反応処理の制御を行う。
In the reaction process, the valve 15 is opened and the gas passage inlet pipe 1 is opened.
The reaction is performed by an active gas generated by supplying the reaction gas 11 from 0 and passing the reaction gas 11 through the generated plasma. The gas generated by the reaction between the active gas and the object to be processed 8 emits light by plasma, the light emission intensity is measured by the detection unit 1, and the reaction processing is controlled by the control unit 3.

【0014】反応検出器の校正においては、反応室4を
排気13により減圧し、プラズマを発生させている状態
で弁16を開いてガス道入管10より校正ガス12をプ
ラズマに供給する。検出部1で校正ガスによる発光強度
を測定し、制御部3で発光強度の測定値と検出レベルの
既定値を比較し、一致しない場合は、高圧電源17で検
出部への印加電圧を調整し、検出レベルの既定値に達す
るように校正を行う。
In the calibration of the reaction detector, the reaction chamber 4 is depressurized by the exhaust 13, the valve 16 is opened in a state where the plasma is generated, and the calibration gas 12 is supplied to the plasma from the gas passage inlet 10. The light emission intensity due to the calibration gas is measured by the detection unit 1, the measured value of the light emission intensity is compared with a predetermined value of the detection level by the control unit 3, and when they do not match, the voltage applied to the detection unit is adjusted by the high voltage power supply 17. The calibration is performed so as to reach the default value of the detection level.

【0015】図2のフローは上記校正方法の一例を示す
ものである。すなわち校正ガスの導入(19)による発
光を検出し(20)、発光強度を所定値と比較する(2
1)。上記発光検出強度が所定値よりも弱ければ(2
2)その程度に従って印加電圧を上げ(23)、上記発
光検出強度が所定値以上に強ければ(24)その程度に
従って印加電圧を下げる(25)。上記測定を繰り返
し、上記比較結果が所定値(あるいは所定範囲内)にな
れば校正を終了する。
FIG. 2 shows an example of the calibration method. That is, light emission due to the introduction of the calibration gas (19) is detected (20), and the light emission intensity is compared with a predetermined value (2).
1). If the emission detection intensity is lower than a predetermined value, (2
2) The applied voltage is increased according to the degree (23), and if the emission detection intensity is higher than a predetermined value (24), the applied voltage is reduced according to the degree (25). The measurement is repeated, and when the comparison result reaches a predetermined value (or within a predetermined range), the calibration is completed.

【0016】上記校正ガスとしては、実際の被処理物の
処理反応で発生するガスと同一の元素を含むガスを使用
し、上記元素の発光波長にて校正を行うことが望まし
い。
As the calibration gas, it is desirable to use a gas containing the same element as the gas generated by the actual processing reaction of the object to be processed, and to perform calibration at the emission wavelength of the element.

【0017】[0017]

【発明の効果】本発明によれば、校正ガスを用いること
で装置の稼動時間や装置ごとの機差による発光強度の検
出レベル差を容易かつ再現性よく校正できる。これによ
り複数台の反応検出器の検出レベルを機差なく調整で
き、装置毎、処理室毎のプロセスの再現性が安定し、半
導体装置製造などにおける製造歩留まりを向上させるこ
とができる。
According to the present invention, by using the calibration gas, it is possible to easily and reproducibly calibrate the difference in the detection level of the light emission intensity due to the operation time of the apparatus and the machine difference of each apparatus. As a result, the detection levels of a plurality of reaction detectors can be adjusted without any machine difference, the reproducibility of the process for each apparatus and each processing chamber can be stabilized, and the production yield in the manufacture of semiconductor devices can be improved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施例における反応検知システムの
構成を示すブロック図。
FIG. 1 is a block diagram showing a configuration of a reaction detection system according to an embodiment of the present invention.

【図2】本発明の一実施例の校正手順を示すフロー図。FIG. 2 is a flowchart showing a calibration procedure according to an embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1…検出部、2…判定部、3…制御部、4…反応室、5
…RF電源(高周波電源)、6…マッチングボックス、
7…プラズマ発生コイル、8…被処理物、9…被処理物
載置台、10…ガス導入管、11…反応ガス、12…校
正ガス、13…排気、14…反応室窓、15…反応ガス
導入バルブ、16…校正ガス導入バルブ、17…高圧電
源、18…光ファイバ。
DESCRIPTION OF SYMBOLS 1 ... Detection part, 2 ... Judgment part, 3 ... Control part, 4 ... Reaction chamber, 5
... RF power supply (high frequency power supply), 6 ... matching box,
7 Plasma generating coil, 8 Workpiece, 9 Workpiece mounting table, 10 Gas introduction pipe, 11 Reaction gas, 12 Calibration gas, 13 Evacuation, 14 Reaction chamber window, 15 Reaction gas Introduction valve, 16: Calibration gas introduction valve, 17: High voltage power supply, 18: Optical fiber.

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 2G043 AA01 CA01 CA02 DA05 EA08 GA06 GA09 GB11 GB21 HA05 JA03 LA02 NA01 NA05 NA06 NA11 2G059 AA01 BB01 DD12 EE06 JJ03 JJ17 KK02 MM01 MM05 MM09 MM10 MM12 4G075 AA62 AA65 CA47 CA51 EB01 EB32  ──────────────────────────────────────────────────続 き Continued on front page F-term (reference) 2G043 AA01 CA01 CA02 DA05 EA08 GA06 GA09 GB11 GB21 HA05 JA03 LA02 NA01 NA05 NA06 NA11 2G059 AA01 BB01 DD12 EE06 JJ03 JJ17 KK02 MM01 MM05 MM09 MM10 MM12 4G075AA51

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】反応処理を行う反応室を有し、反応室内で
プラズマを発生させ、プラズマと供給ガスにより被処理
物の反応処理を行わせ、上記反応処理により発生したガ
スとプラズマによる発光を検出部で検出し、検出した発
光強度から反応状態を検知する反応検出器において、発
光強度の検出レベルを校正ガスを用いて調整することを
特徴とした反応検出器の校正方法。
1. A reaction chamber for performing a reaction process, a plasma is generated in the reaction chamber, a reaction process is performed on an object to be processed by the plasma and a supply gas, and light generated by the gas generated by the reaction process and the plasma is emitted. A method for calibrating a reaction detector, comprising: adjusting a detection level of light emission intensity using a calibration gas in a reaction detector that detects a reaction state based on the light emission intensity detected by a detection unit.
【請求項2】反応検出器の校正に用いる校正ガスは反応
処理により発生したガスと同一の元素を含むガスを使用
し、上記元素の発光波長にて校正を行うことを特徴とし
た請求項1に記載の反応検出器の校正方法。
2. The method according to claim 1, wherein a calibration gas used for calibrating the reaction detector is a gas containing the same element as the gas generated by the reaction process, and the calibration is performed at the emission wavelength of the element. 2. The method for calibrating a reaction detector according to 1.
JP11130946A 1999-05-12 1999-05-12 Method for calibrating reactive sensor Pending JP2000321207A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11130946A JP2000321207A (en) 1999-05-12 1999-05-12 Method for calibrating reactive sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11130946A JP2000321207A (en) 1999-05-12 1999-05-12 Method for calibrating reactive sensor

Publications (1)

Publication Number Publication Date
JP2000321207A true JP2000321207A (en) 2000-11-24

Family

ID=15046368

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11130946A Pending JP2000321207A (en) 1999-05-12 1999-05-12 Method for calibrating reactive sensor

Country Status (1)

Country Link
JP (1) JP2000321207A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1199179A1 (en) 2000-10-20 2002-04-24 Seiko Epson Corporation Ink-jet recording device and ink cartridge
EP1199178A1 (en) 2000-10-20 2002-04-24 Seiko Epson Corporation Ink cartridge for ink jet recording device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1199179A1 (en) 2000-10-20 2002-04-24 Seiko Epson Corporation Ink-jet recording device and ink cartridge
EP1199178A1 (en) 2000-10-20 2002-04-24 Seiko Epson Corporation Ink cartridge for ink jet recording device
EP1967367A2 (en) 2000-10-20 2008-09-10 Seiko Epson Corporation Ink cartridge for ink jet recording device

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