JP2000307194A - Manufacture of nitride semiconductor laser element and nitride semiconductor laser element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method by which a high-accuracy nitride semiconductor laser element can be manufactured by controlling the ground amount and ground angle of the resonant surface side of the laser element to the level of sub-microns at the time of finishing the resonant surface side by grinding. SOLUTION: At the time of grinding the surface 33 of the end section of a nitride semiconductor laser element on the first resonant surface 51 side of the laser element after nitride semiconductor layers (an n-type nitride semiconductor layer 11, an active layer 12, and a p-type nitride semiconductor layer 13) are grown on a substrate 10, the ground amount and ground angle of the surface 33 are controlled by arranging markers 41-44, the dimensions of which on the surface 33 vary in accordance with the ground amount of the surface 33 on the peripheral edge of the surface 33 on the surface 11a side of the n-type nitride semiconductor layer 11 which is exposed as part of the layer 11 is removed and detecting the ground amounts and ground angles of the markers 41-44.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a nitride semiconductor (I).
n _X Al _Y Ga _1-XY N, 0 ≦ X, 0 ≦ Y, X + Y ≦
1) A method for manufacturing a nitride semiconductor laser device and a nitride semiconductor laser device according to (1).

[0002]

2. Description of the Related Art In general, a laser device made of a compound semiconductor requires a resonance surface for causing light in an active layer to resonate inside the semiconductor layer. Long-wavelength light emitting semiconductor laser devices such as infrared light and red light which are currently in practical use are, for example, GaAlA.
s, GaAlAsP, GaAlInP, etc. These materials are grown on a GaAs substrate. G
Since aAs has a cleavage property in the material itself, the resonance surface of the long wavelength semiconductor laser device is often a cleavage surface utilizing the cleavage property of the GaAs substrate.

By the way, since a nitride semiconductor is often grown on a non-cleavable substrate such as sapphire (Al ₂ O ₃ ), the substrate is cleaved and the cleavage surface of the nitride semiconductor is changed. It is difficult to make it a resonance surface. On the other hand, there is a method of forming a resonance surface of a nitride semiconductor by etching, but after forming the resonance surface by etching, when the substrate is divided, a part of the substrate protruding from the resonance surface reflects and transmits outgoing light. Therefore, the emitted laser light is scattered in various directions. If such scattering occurs, it becomes difficult to couple the lens to the lens, so that application to various laser application devices such as a laser beam printer and an optical disk becomes difficult.

Therefore, in Japanese Patent Application Laid-Open No. 9-223844, a nitride semiconductor layer is grown on a substrate, and the resonance surface of the nitride semiconductor layer is formed by etching. There is disclosed a nitride semiconductor laser device in which laser light is not blocked by a portion including a substrate protruding from a resonance surface.

According to Japanese Patent Application Laid-Open No. 9-223844, a lapping, cutting or etching means is used as a means for removing part or all of a portion including a substrate protruding from a resonance surface of a nitride semiconductor laser device. It is disclosed that this is one of more selected means.

[0006]

SUMMARY OF THE INVENTION However, Japanese Patent Application Laid-Open No.
According to the method of manufacturing a nitride semiconductor laser device disclosed in JP-A-223844, when removing a portion including a substrate protruding from a resonance surface of the nitride semiconductor laser device, there is no reference to the removal amount. It is difficult to finish the removal surface with micron accuracy even if it is removed without it.

In order to prevent scattering of laser light, it is necessary to process the resonance surface with an accuracy of about 1 μm. However, according to the above-described conventional method, the removal surface of the substrate is inclined with respect to the resonance surface. There are cases. Then, if the protruding portion is obliquely removed from the resonance surface, the resonance surface may be erroneously damaged.

Accordingly, in the present invention, a nitride semiconductor laser element suitable for practical use is provided by controlling the grinding amount and the grinding angle to the micron precision when finishing the resonance surface side of the nitride semiconductor laser element by grinding. The purpose is to gain.

[0009]

According to the present invention, there is provided a nitride semiconductor laser device having a resonator formed by growing a nitride semiconductor layer on a substrate and removing a part of the nitride semiconductor layer to form a resonator. When grinding the substrate and the nitride semiconductor layer on the same substrate, a marker whose grinding surface dimension changes in accordance with the grinding amount is arranged at an end of the nitride semiconductor laser device on the resonance surface side, and the marker A method for manufacturing a nitride semiconductor laser device, characterized in that a grinding surface dimension is detected to control a grinding amount and a grinding angle of the substrate and a nitride semiconductor layer on the substrate.

[0010] This makes it possible to control the grinding amount and the grinding angle of the substrate on the resonance surface side of the nitride semiconductor laser device and the nitride semiconductor layer on the substrate to micron accuracy, and the ground surface is unexpectedly inclined. It is possible to obtain a highly accurate ground surface at will without causing damage to the resonance surface due to grinding or excessive grinding.

[0011]

According to the first aspect of the present invention, there is provided a semiconductor laser device having a resonator formed by growing a nitride semiconductor layer on a substrate and removing a part of the nitride semiconductor layer to form a resonator. When grinding and finishing the nitride semiconductor layer on the surface side substrate and the same substrate, a marker whose grinding surface size changes according to the grinding amount is arranged at the end of the nitride semiconductor laser device on the resonance surface side, A method of manufacturing a nitride semiconductor laser device, characterized in that a grinding surface dimension of a marker is detected to control a grinding amount and a grinding angle of the substrate and a nitride semiconductor layer on the substrate. This makes it possible to detect the amount of grinding based on the size of the ground surface of the marker, which changes in a larger unit than the amount of grinding, so that the substrate on the resonance surface side of the nitride semiconductor laser device and the nitride semiconductor on the substrate It is possible to control the grinding amount and grinding angle of the layer to micron precision, and the grinding surface will not be suddenly inclined or unnecessarily ground, and the resonance surface will not be damaged. A highly accurate ground surface can be obtained.

According to a second aspect of the present invention, there is provided the method for manufacturing a nitride semiconductor laser device according to the first aspect, wherein the grinding is performed only on a portion protruding from the resonance surface. Thereby, the laser light emitted from the resonance surface is a surface on which a part of the nitride semiconductor layer on the substrate is removed,
That is, it is possible to obtain a nitride semiconductor laser device finished with high precision of a micron so as not to interfere with a portion protruding from the resonance surface of the nitride semiconductor laser device. In the nitride semiconductor laser device thus obtained, since the laser light emitted from the resonance surface does not interfere with the portion protruding from the resonance surface, the emitted laser light does not scatter.

According to a third aspect of the present invention, there is provided the method for manufacturing a nitride semiconductor laser device according to the first aspect, wherein the finishing is performed including the resonance surface. By controlling the grinding amount and the grinding angle of the nitride semiconductor laser device by the grinding amount or the grinding angle of the marker arranged at the end of the nitride semiconductor laser device on the resonance surface side, the resonance surface can be made micron. Can be ground with high precision, and the resonance surface can be formed perpendicular to the substrate and in a mirror-like state.

According to a fourth aspect of the present invention, in the nitride semiconductor laser device according to the first or second aspect, the grinding and finishing are performed so that an angle between the surface of the substrate and the ground surface is 90 ° or less. It is a manufacturing method. As a result, even if the grinding angle is slightly shifted, the probability of damaging the resonance surface on the substrate surface side can be reduced.

According to a fifth aspect of the present invention, there is provided the method of manufacturing a nitride semiconductor laser device according to any one of the first to fourth aspects, wherein a plurality of the markers are arranged at intervals on the periphery of the ground surface. It is. The grinding angle is easily calculated by forming a plurality of markers on the periphery of the ground surface at the end on the resonance surface side of the nitride semiconductor laser device and comparing the grinding amount of each of the plurality of markers. Therefore, it is easy to control the grinding angle so that the ground surface is parallel to the resonance surface. Further, it is possible to process the nitride semiconductor laser device at an angle at which the grinding is most easily performed by controlling the grinding angle of the ground surface.

Hereinafter, an embodiment of the present invention will be described with reference to FIG.
This will be described with reference to FIG.

(First Embodiment) FIG. 1 is a perspective view of a nitride semiconductor laser device according to a first embodiment of the present invention.

As shown in FIG. 1, the nitride semiconductor laser device according to the first embodiment of the present invention has an n-type nitride semiconductor layer 11 made of a nitride semiconductor having a thickness of 2 μm on a sapphire substrate 10. An n-type optical confinement layer (not shown) made of a nitride semiconductor having a thickness of 0.3 μm;
an active layer 12 made of a nitride semiconductor having a thickness of 0.3 μm;
A p-type optical confinement layer (not shown) made of a nitride semiconductor having a thickness of 1 μm and a p-type nitride semiconductor layer 13 made of a nitride semiconductor having a thickness of 1 μm are sequentially grown, and a part of these nitride semiconductor layers is removed. A resonator that has a first resonance surface 51 on the near side in FIG. 1 and a second resonance surface 52 on the back side in FIG. 2 and emits laser light from the first resonance surface 51 is provided. Make up.

On the p-type nitride semiconductor layer 13, an insulator layer (not shown) made of a silicon oxide film having a thickness of 0.5 μm, and a part of the insulator layer is removed to remove the p-type nitride semiconductor. A first positive electrode 21 made of nickel and gold (see FIG. 3) having a thickness of 0.08 μm and formed on the layer 13 and a thickness formed on the insulating layer and connected to the first positive electrode 21 A second positive electrode 22 made of 0.3 μm made of gold is arranged. On the other hand, a negative electrode 2 is provided on the n-type nitride semiconductor layer 11.
3 are arranged.

First resonance surface 5 of nitride semiconductor laser device
Depending on the amount of grinding, the surface 11a of the n-type nitride semiconductor layer 11, which is a peripheral edge of a ground surface 33 to be described later at the end on one side and which is exposed by removing a part of the nitride semiconductor layer, Wrap markers 41, 4 whose dimensions of the grinding surface 33 change
2 are formed. Similar markers 43 and 44 are formed on the first resonance surface 51 side end of the nitride semiconductor laser device, on the back surface 10 a side of the substrate 10. .

These markers 41 to 44 are provided at portions protruding from the first resonance surface 51 of the nitride semiconductor laser device,
That is, the portion of the substrate 10 and the n-type nitride semiconductor layer 11 sandwiched between the markers 41 and 42 and the markers 43 and 44 projecting beyond the first resonance surface 51 is defined as the first resonance surface 5.
Both sides are ground by lapping. Since the dimensions of the ground surface 33 of the markers 41 to 44 on the peripheral edge of the ground surface 33 change according to the grinding amount, the dimensions of the ground surface 33 are detected to control the grinding amount and the grinding angle of the protruding portion.

By controlling the grinding amount and the grinding angle of the portion of the nitride semiconductor laser device projecting from the first resonance surface 51 based on the grinding amount or the removal angle detected from the markers 41 to 44, the first Since a portion protruding from the resonance surface 51 can be ground with high precision of a micron, the ground surface 33 of the protruding portion becomes unexpectedly inclined,
The ground surface 33 can be formed in parallel with the first resonance surface 51 without being ground unnecessarily or damaging the first resonance surface 51.

As a result, the laser light emitted from the first resonance surface 51 is emitted from the surface of the substrate 10 from which a part of the nitride semiconductor layer is removed, that is, from the first resonance surface 51 of the nitride semiconductor laser device. A nitride semiconductor laser device finished with high precision of microns so as not to interfere with the protruding portion can be obtained. The nitride semiconductor laser device obtained in this manner has a first resonance surface 5 at a portion protruding from the first resonance surface 51.
Since the laser light emitted from No. 1 does not interfere, the emitted laser light does not scatter.

Next, a method for manufacturing such a nitride semiconductor laser device will be described. 2 to 4 are explanatory views of a method for manufacturing the nitride semiconductor laser device according to the first embodiment of the present invention. FIG. 5 shows the nitride semiconductor laser device according to the first embodiment of the present invention. Is a perspective view from the front side, FIG. 6B is a perspective view from the back side, FIG. 6 is a plan view showing details of the vicinity of the marker of the nitride semiconductor laser device according to the first embodiment of the present invention, and FIG. It is explanatory drawing about the lap processing of the nitride semiconductor laser element in 1st Embodiment of this invention, (a) is a front view of the nitride semiconductor laser element seen from the grinding surface side, (b) is a jig for lap. FIG. 4C is a perspective view, and FIG.

First, as shown in FIG. 2A, an n-type nitride semiconductor layer 11 made of a nitride semiconductor having a thickness of 2 μm and an n-type nitride semiconductor layer 11 made of a nitride semiconductor having a thickness of 0.3 μm are formed on a sapphire substrate 10. -Type optical confinement layer (not shown), active layer 12 made of 0.1 μm-thick nitride semiconductor, p-type optical confinement layer made of 0.3 μm-thick nitride semiconductor (not shown), and 1 μm-thick Made of nitride semiconductor
The type nitride semiconductor layer 13 is formed in order by a crystal growth method.

Next, as shown in FIG. 2B, an insulating layer 14 made of a 0.5 μm thick silicon oxide film is formed on the p-type nitride semiconductor layer 13 by a vapor deposition method. A pattern of a resonator is formed on the substrate by photolithography. Thereafter, as shown in FIG. 2C, the p-type nitride semiconductor layer 13, the p-type optical confinement layer, the active layer 12, the n-type optical confinement layer, and a part of the n-type nitride semiconductor layer 11 are dry-etched. To make the n-type nitride semiconductor layer 11 exposed on the surface. Further, in order to surely expose the n-type nitride semiconductor layer 11, an additional dry etching of 0.2 μm is performed. The insulating layer 14 is reduced in thickness by this series of dry etching to have a thickness of 0.3 μm.

Then, as shown in FIG. 3A, a connection pattern between the positive electrode and the p-type nitride semiconductor layer 13 is formed on the insulator layer 14 by photolithography, and the insulator layer 14 is wetted with buffered hydrofluoric acid. It is removed by an etching method. Thereafter, a first positive electrode 21 made of nickel and gold having a thickness of 0.08 μm is formed on the upper portion by a vapor deposition method. At this time, the n-type nitride semiconductor layer 11 on the periphery of the ground surface 33 at the end on the first resonance surface 51 side of the nitride semiconductor laser device, which is exposed by removing a part of the nitride semiconductor layer
On the surface 11a side, the dimensions of the grinding surface 33 change according to the grinding amount, and the lap markers 41, 4 of the same shape, respectively.
2 is formed of the same material as the first positive electrode 21. The surface on the first resonance surface 51 side of the portion protruding from the first resonance surface 51 of the nitride semiconductor laser device becomes the ground surface 33.

As shown in FIG. 6, the lap marker 41 has a base 47 of 100 μm and a height H of 50 μm.
m, is an isosceles triangular prism having a thickness of about 0.08 μm, and is arranged such that the bottom side 47 is parallel to the first resonance surface 51. In addition, the first resonance surface 51 is formed so that a position of 5 μm from the bottom side 47 toward the grinding surface 33 becomes the first resonance surface 51. When the marker 41 having such a shape is ground from the grinding surface 33 side, the size of the width of the grinding surface 33 changes so as to gradually increase with respect to the grinding amount. At this time, marker 4
1 is formed with micron precision (about 1 μm).

The wrap marker 41 may have another shape such as an equilateral triangle. In addition, it is also possible to form an inverted triangle in which the width of the surface to be ground of the marker 41 changes so as to gradually decrease with respect to the grinding amount when lapping is performed.

However, since the marker 41 is measured from the direction perpendicular to the ground surface 33 by an optical microscope, it is desirable that the marker 41 be formed of a glossy substance which is easy to observe in a metallic color. Thereby, the marker 41 can be easily recognized and the measurement can be easily performed, so that the processing accuracy is improved. In addition, since the marker 41 is formed with higher precision when it is formed simultaneously with the surface or pattern for which verticality is desired, the marker 41 is formed in the same step as the first positive electrode 21 or the first resonance surface 51. Is good.

Further, as shown in FIG. 3B, a pattern of the second positive electrode 22 is formed on the insulator layer 14 by photolithography, and the pattern of the insulator layer 14 and the p-type nitride semiconductor layer 13 is formed. Second positive electrode 2 made of gold having a thickness of 0.3 μm
2 is formed by an evaporation method. Similarly, as shown in FIG. 3C, a negative electrode pattern is formed on the n-type nitride semiconductor layer 11 by photolithography, and the n-type nitride semiconductor layer 11 is formed.
A negative electrode 23 made of gold having a thickness of 0.3 μm is formed thereon by a vapor deposition method.

As shown in FIGS. 4A and 4B, similarly, on the back surface 10a side of the substrate 10, the markers 41 and 42 on the front surface 11a side of the n-type nitride semiconductor layer 11 are located symmetrically. Markers 43 and 44 each having the same shape as marker 41
To form Note that the markers 43 and 44 are formed of a metal having good adhesion such as titanium.

Thereafter, as shown in FIGS. 5A and 5B, portions of the nitride semiconductor laser device projecting beyond the first resonance surface 51, ie, the markers 41 and 42 and the marker 4
Portions of the substrate 10 and the n-type nitride semiconductor layer 11 that are sandwiched between the first and second resonance surfaces 51 and 43 are ground by lapping from the first resonance surface 51 side. At this time, the markers 41 to 44 formed on the back surface 10a side and the front surface 11a side of the substrate 10 and the n-type nitride semiconductor layer 11 are also ground at the same time, and the surface to be ground by the lap, that is, the marker on the ground surface 33 side 41-44
The width dimension changes.

Specifically, when the bottom side 47 as described above is 10
An isosceles triangle marker 41 having a height of 0 μm and a height H of 50 μm
In the case of (1), when lapping is performed by 1 μm from the grinding surface 33 side, the length of the marker 41 viewed from the grinding surface 33 side is increased by 2 μm.
When the marker 41 is arranged so that the position of 5 μm from the base 47 to the side of the grinding surface 33 becomes the first resonance surface 51, the grinding surface 3 until the width of the marker 41 becomes 80 μm.
When lapping is performed from the 3rd side, 5μ before the first resonance surface 51
This means that lapping has been performed up to the position of m.

In this lapping process, the grinding surface 33 of the bar 31 in which the nitride semiconductor laser device is continuously formed in a rod shape as shown in FIG. The jig 30 is mounted so as to be exposed so as to be parallel to the back surface of the jig 30, and the ground surface 33 is brought into contact with a rotating lapping machine 32 as shown in FIG. Thus, the grinding surface 33 is ground. At this time, the width of the four markers 41, 43, 45, and 46 arranged at both ends of the bar 31 is controlled to be the same, and the width of the four markers 41, 43, 45, and 46 is fixed to a certain length. Stop lapping when it is no longer necessary.

If lapping is performed until the width of the marker 41 becomes 90 μm, lapping is performed to the same plane as the first resonance surface 51. If lapping is further performed until the width becomes 100 μm, the first formed by etching is formed. Will be damaged. Therefore, if the lap is stopped when the width of the marker 41 becomes 80 to 90 μm, the optimum removal amount of the first resonance surface 51 is 5 μm or less.

The ground surface 33 formed by such a method is parallel to the first resonance surface 51 and the back surfaces 10a of the substrate 10 and the n-type nitride semiconductor layer 11, respectively.
Side and the surface 11a side. In addition, since the grinding amount can be defined by the width of the marker, it is possible to accurately machine the first resonance surface 51 within 0 to 5 μm. In order to make the grinding surface 33 closer to a mirror surface, polishing may be performed thereafter. Finally, the nitride semiconductor laser device is formed into chips, and individual nitride semiconductor laser devices are completed.

In this embodiment, the substrate 10
Since a plurality of markers 41 to 46 are formed on the back surface 10a side and the front surface 11a side of each of the n-type nitride semiconductor layers 11 and the grinding amounts of the plurality of markers 41 to 46 are compared, It is possible to easily calculate the grinding angle, and it is easy to form the grinding surface 33 so as to be parallel to the first resonance surface 51 by controlling the grinding angle.

(Embodiment 2) FIGS. 8 and 9 are views showing a nitride semiconductor laser device according to a second embodiment of the present invention, wherein (a) is a front view seen from the ground surface side, b)
Is a right side view.

With respect to the same nitride semiconductor laser device as in the first embodiment, as shown in FIG. 8, the grinding angle θ at the time of lapping the nitride semiconductor laser device (see FIG. 9), ie, the surface of the substrate, In order to detect the angle between 11a and the grinding surface 33, the width of the markers 41 to 46 may be measured. For example, the markers 41 and 45 are 80 μm, the markers 43 and 46 are 90 μm, and the thickness of the substrate 10 is 40 μm.
In the case of 0 μm, the grinding angle θ can be calculated as 89.3 degrees.
When the markers 41 to 46 are 85 μm and have the same width, the grinding angle θ is 90 degrees. Markers 41 and 43 and marker 4
If the widths of 5, 46 are different, the bar 31 is inclined in the longitudinal direction.

On the other hand, as shown in FIG. 9, when the widths of the markers 41, 42, 45 on the front surface 11a of the n-type nitride semiconductor layer 11 and the markers 43, 44, 46 on the back surface 10a of the substrate 10 are different. By comparing the removal amounts of the markers 41 to 46 on the front surface 11a side and the back surface 10a side, the substrate 1 can be easily removed from the front surface 11a side of the n-type nitride semiconductor layer 11.
It is possible to calculate the grinding angle θ of the ground surface 33 reaching the back surface 10a side of 0, and to control the grinding angle θ of the ground surface 33 to process the nitride semiconductor laser device at the grinding angle that is most easily removed. Becomes possible.

In particular, when lapping is performed by controlling the grinding angle θ to be 90 ° or less, when the portion of the nitride semiconductor laser device projecting from the first resonance surface 51 is cut, this grinding angle is reduced. Even if θ slightly shifts, the first
Can be reduced, and the lapping can be performed more safely and efficiently.

(Embodiment 3) In the third embodiment, the resonance surface 51 of the nitride semiconductor laser device is formed by using the same markers as the markers 41 to 46 described in the first and second embodiments. A method for forming the will be described. FIG. 10 is a plan view showing details of the vicinity of a marker of the nitride semiconductor laser device according to the third embodiment of the present invention.
FIG. 1 is an explanatory diagram of a method for manufacturing a nitride semiconductor laser device according to a third embodiment of the present invention.

First, in the same manner as described with reference to FIGS. 2 to 4, a nitride semiconductor layer is grown on the substrate 10, and the second resonance surface 52 is formed by etching. On the other hand, as shown in FIG. 10, the first resonance surface 51 may remain on the same surface as the ground surface 33, or may be formed by etching.

The substrate 10 and the nitride semiconductor layer (the n-type nitride semiconductor layer 11, the n-type optical confinement layer, the active layer 12, and the p-type layer) are provided at the end of the nitride semiconductor laser device on the first resonance surface 51 side. The markers 10 to 44 for grinding together with the mold light confinement layer and the p-type nitride semiconductor layer 13) are arranged, and the amount of grinding or the grinding angle is detected by these markers 41 to 44, thereby forming the substrate 10 and the nitride semiconductor layer. The grinding finish is performed including the first resonance surface 51 by controlling the grinding amount and the grinding angle.

Thus, the grinding amount and the grinding angle of the substrate 10 and the nitride semiconductor layer are controlled by the grinding amount or the grinding angle of the markers 41 to 44 disposed at the end of the nitride semiconductor laser device on the resonance surface 51 side. When the first resonance surface 51 is formed by the above method, the first resonance surface 51 can be removed with a micron accuracy, and the first resonance surface 51 can be formed perpendicularly to the substrate 10 and in a mirror state. It becomes possible. In the nitride semiconductor laser device obtained as a result, the beam emission direction of the laser light emitted from the first resonance surface 51 becomes parallel to the horizontal plane of the substrate 10, and it is possible to output a stable laser light.

[0047]

According to the present invention, the following effects can be obtained.

(1) According to the first aspect of the present invention, it is possible to control the grinding amount and the grinding angle of the substrate on the resonance surface side of the nitride semiconductor laser device and the nitride semiconductor layer on the substrate to submicron accuracy. Therefore, the ground surface is not suddenly inclined, or is ground more than necessary, and does not damage the resonance surface, and a highly accurate ground surface can be obtained at will.

(2) According to the second aspect of the present invention, the laser light emitted from the resonance surface protrudes from the surface of the substrate from which a part of the nitride semiconductor layer has been removed, that is, from the resonance surface of the nitride semiconductor laser device. The nitride semiconductor laser device finished with high precision of submicron so as not to interfere with the part,
Since the beam emission direction of the laser light emitted from the resonance surface is parallel to the surface of the substrate from which part of the nitride semiconductor layer has been removed, stable laser light can be output.

(3) According to the third aspect of the present invention, the grinding amount and the grinding angle of the nitride semiconductor laser device are determined by the grinding amount or the grinding angle of the marker arranged at the end on the resonance surface side of the nitride semiconductor laser device. If the resonance surface is formed by controlling, the resonance surface can be ground with high precision of submicron, and the resonance surface can be formed perpendicularly to the substrate and in a mirror state. In the nitride semiconductor laser device thus obtained, the beam emission direction of the laser light emitted from the resonance surface becomes parallel to the horizontal plane of the substrate, and it is possible to output stable laser light.

(4) According to the fourth aspect of the present invention, when a portion protruding from the resonance surface of the nitride semiconductor laser element is cut, the resonance surface on the front surface side of the substrate even if the grinding angle is slightly shifted. Can be reduced, and lapping can be performed more safely and efficiently.

(5) According to the fifth aspect of the present invention, a plurality of markers are formed on the periphery of the ground surface at the end on the resonance surface side of the nitride semiconductor laser device, and the grinding amount of each of the plurality of markers is reduced. The comparison makes it possible to easily calculate the grinding angle, so that it is easy to control the grinding angle so that the ground surface is parallel to the resonance surface. Further, it is possible to process the nitride semiconductor laser device at an angle at which the grinding is most easily performed by controlling the grinding angle of the ground surface.

[Brief description of the drawings]

FIG. 1 is a perspective view of a nitride semiconductor laser device according to a first embodiment of the present invention.

FIG. 2 is a diagram illustrating a method of manufacturing the nitride semiconductor laser device according to the first embodiment of the present invention.

FIG. 3 is a diagram illustrating a method of manufacturing the nitride semiconductor laser device according to the first embodiment of the present invention.

FIG. 4 is a diagram illustrating a method of manufacturing the nitride semiconductor laser device according to the first embodiment of the present invention.

FIG. 5 is a diagram illustrating a method for manufacturing the nitride semiconductor laser device according to the first embodiment of the present invention.

FIG. 6 is a plan view showing details of the vicinity of a marker of the nitride semiconductor laser device according to the first embodiment of the present invention.

FIG. 7A is a front view of the nitride semiconductor laser device according to the first embodiment of the present invention viewed from the ground surface side in lapping of the nitride semiconductor laser device. FIG. 7B is a first embodiment of the present invention. Perspective view of a lap jig in lapping of a nitride semiconductor laser device in (c) Explanatory view showing a state of lapping in lapping of a nitride semiconductor laser device in a first embodiment of the present invention.

FIG. 8A is a front view of a nitride semiconductor laser device according to a second embodiment of the present invention as viewed from the ground surface side. FIG. 8B is a right side view of the nitride semiconductor laser device according to the second embodiment of the present invention. Figure

FIG. 9A is a front view of the nitride semiconductor laser device according to the second embodiment of the present invention viewed from the ground surface side. FIG. 9B is a right side view of the nitride semiconductor laser device according to the second embodiment of the present invention. Figure

FIG. 10 is a plan view showing details in the vicinity of a marker of a nitride semiconductor laser device according to a third embodiment of the present invention.

FIG. 11 is a diagram illustrating a method for manufacturing a nitride semiconductor laser device according to a third embodiment of the present invention.

[Explanation of symbols]

 Reference Signs List 10 substrate 11 n-type nitride semiconductor layer 12 active layer 13 p-type nitride semiconductor layer 14 insulating film layer 21 first positive electrode 22 second positive electrode 23 negative electrode 30 jig for lap 31 bar 32 lapping machine 33 ground surface 41 to 46 Marker 47 Base 51 First resonance surface 52 Second resonance surface

Continuing on the front page (72) Inventor Shinichiro Kaneko 1006 Kazuma Kadoma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. Reference) 5F073 CA17 CB05 DA35

Claims (6)

[Claims] A nitride semiconductor layer is formed on a substrate and a part of the nitride semiconductor layer is removed to form a resonator. When grinding and finishing the object semiconductor layer, a marker whose grinding surface dimension changes in accordance with the amount of grinding is arranged at the end of the nitride semiconductor laser device on the resonance surface side, and the grinding surface size of the marker is detected and A method for manufacturing a nitride semiconductor laser device, comprising controlling a grinding amount and a grinding angle of a substrate and a nitride semiconductor layer on the substrate. 2. The method for manufacturing a nitride semiconductor laser device according to claim 1, wherein said grinding is performed only on a portion protruding from said resonance surface. 3. The method for manufacturing a nitride semiconductor laser device according to claim 1, wherein said finishing is performed including said resonance surface. 4. The method for manufacturing a nitride semiconductor laser device according to claim 1, wherein said grinding finish is performed so that an angle between a surface of said substrate and a ground surface is 90 ° or less. 5. The method for manufacturing a nitride semiconductor laser device according to claim 1, wherein a plurality of said markers are arranged at intervals on a peripheral edge of a ground surface. 6. A resonator is formed by growing a nitride semiconductor layer on a substrate and removing a part of the nitride semiconductor layer to form a resonator, and further comprising a substrate on at least one resonance surface side of the resonator and the substrate. A nitride semiconductor laser device in which an upper nitride semiconductor layer is ground and finished, wherein an angle between a surface of the substrate and a ground surface is 90 ° or less.