JP2000306493A - Electron emission element, manufacture of electron emission element, flat-panel display, and manufacture of flat-panel display - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make potential distribution in the vicinity of a hole parallel to an electrode plane and suppress diffusion of emitted electrons in simple constitution by blocking the hole for emitting electrons to the outside with a conductive thin film. SOLUTION: A material having low electron scattering probability is filled in a hole formed with a gate electrode 6 of an FE type electron source of an electron emission element and an emitter to the same height as the top surface of the gate electrode 6. A thin film 7 thinner than an average free path of an electron is stacked on the whole surface of the gate electrode 6, and the whole gate electrode 6 is made flat and equipotential. As a result, an equipotential surface formed between an anode electrode and the gate electrode 6 is made parallel to the surface of the gate electrode 6, electrodes transmitted through the thin film 7 from the hole under the gate electrode 6 reach an anode electrode without the spread of beams. The material filled in the hole under the gate electrode 6 is preferable to have low electron scatter and to be capable of forming a conductive film such as a porous silica film.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron-emitting device for emitting electrons, a method of manufacturing the electron-emitting device, a flat display using the electron-emitting device, and a method of manufacturing a flat display.

[0002]

2. Description of the Related Art With the progress of the information society, the development of an electron emission type flat display aiming at large area and low power consumption (high efficiency) has been promoted.

[0003] One of the electron emitters that is being actively developed is a field emission (FE) type.
n).

As shown in FIG. 4, the FE type is basically composed of an electron emitting portion (emitter) 4 and an electron emitting portion 4.
A gate electrode 6 for extracting electrons from the gate electrode, and an insulating layer 3 necessary for applying a voltage between them.

Electrons extracted from the emitter by the voltage applied to the gate electrode 6 are extracted out of the hole,
In the drawing, it is attracted to an anode electrode (not shown) placed above.

[0006] A voltage of several hundred volts to several kV is applied to the anode electrode.

[0007] Further, a phosphor is applied to the anode electrode, and emits light when excited by incident electrons having energy of several hundred eV to several kVeV.

As shown in FIG. 5A, a spint type having a sharpened tip is known as the electron emitting portion 4.

As a material of the cone, a high melting point metal such as molybdenum (hereinafter referred to as Mo) or tungsten (hereinafter referred to as W) and a semiconductor material such as Si are used.

[0010] Apart from the Spindt type, a diamond film or a carbon nanotube film can be used as an emitter material.

These films do not need to be formed in a cone shape because they easily emit electrons, and can be used in a film shape 10 as shown in FIG. 5B.

The thickness of the insulating layer and the diameter of the hole formed in the gate electrode are typically 1 μm, and the design is such that the aspect ratio (hole diameter / hole depth) is about 1.

[0013]

However, in the case of the above-described prior art, the following problems have occurred.

That is, the FE type has a problem of beam spread.

As shown in FIG. 4 described above, the gate electrode necessarily has holes for extracting electrons.

Due to this hole, the potential distribution is not parallel above the hole as shown in FIG.

As a result, the electrons emitted from the holes fly in a direction in which they diverge due to the lens effect of the electric field.

Therefore, the distribution of the position of the arriving electrons on the anode electrode is much larger than the diameter of the hole.

That is, assuming that the anode voltage is Va, the gate voltage is Vg, and the distance between the anode and the gate is d, the radius r of the light-emitting point of the electrons reaching the anode electrode is r = (2Vg / Va) ^1/2 × d.

Assuming a standard structure and driving conditions, Vg
= 50V, Va = 5kV, d = 2mm, r = 28
3 μm.

For example, a 10-inch VGA (48 pixels)
In order to realize a color display corresponding to (0 × 640), r needs to be suppressed to 50 μm or less.

Attempts are currently being made to provide a focusing electrode 12 on the gate electrode as shown in FIG. 7 to display a high definition image.

In this case, the converging electrode 12 deflects the diverging electron beam by an electric field and adjusts it by an applied voltage (V2) so as to have a desired beam diameter on the anode electrode. Further, an insulating film 11 and a focusing electrode 12 for applying an adjustment voltage are provided.

However, in such a case, since a focusing electrode is required, not only the structure becomes complicated, but also the process becomes longer and the cost increases.

As described above, in the current FE-type electron-emitting device (or the electron source including the FE-type electron-emitting device), there is a problem such as a complicated structure in order to achieve high definition.

The present invention has been made in order to solve the above-mentioned problems of the prior art, and it is an object of the present invention to provide a simple structure and excellent quality for suppressing the diffusion (beam spread) of emitted electrons. Another object of the present invention is to provide an electron-emitting device, a method for manufacturing the electron-emitting device, a flat display, and a method for manufacturing the flat display.

[0027]

According to the present invention, there is provided an electron-emitting device including a pair of electrodes and an electron-emitting portion provided between the pair of electrodes. An electron emission element that emits electrons emitted from the electron emission portion to the outside through a hole formed in one of the pair of electrodes, wherein a conductive thin film that covers the hole is provided. It is characterized by.

Therefore, the potential distribution formed near the hole can be made parallel to the electrode plane.

The thickness of the thin film is preferably smaller than the length of the mean free path of the electrons emitted from the electron emitting portion.

Therefore, the emitted electrons can be prevented from being captured by the thin film.

It is preferable that an insulating layer is provided between the pair of electrodes, a hollow portion communicating with the hole is formed in the insulating layer, and the electron emission portion is provided in the hollow portion.

It is preferable that the hollow part is filled with porous silica.

Therefore, scattering of electrons in the hollow portion can be suppressed.

The porosity of the porous silica is 85% or more and 1
It is good to be less than 00%.

Preferably, the electron-emitting portion includes a diamond fine particle film.

[0036] It is preferable that the electron emission section includes a carbon nanotube film.

According to the method of manufacturing an electron-emitting device of the present invention, one of the pair of electrodes is formed in a hollow formed in an insulating layer provided between the pair of electrodes. Filling the raw material solution of the porous silica through the pores, gelling the solution filled by the solution filling step, and maintaining the silica skeleton formed by the gelling step After the porous silica is formed in the hollow portion by the solution filling step, the gelling step, and the processing step of removing the solvent while removing the solvent, the electrode surface on which the pores are formed and the pores are formed. A vapor deposition step of vapor-depositing a conductive thin film on the exposed surface of the porous silica.

A flat display according to the present invention includes a plurality of the above-described electron-emitting devices, and a display unit that receives the electrons emitted from these electron-emitting devices and performs light-emitting display. It is characterized by the following.

According to the method of manufacturing a flat display of the present invention, a plurality of electron-emitting devices are formed in a matrix by the above-described method of manufacturing an electron-emitting device, and the electron-emitting devices formed in a matrix are formed. A display portion for displaying light emission by electrons emitted from the electron-emitting device is provided at a position facing the light-emitting device.

[0040]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments and examples of the present invention will be illustratively described in detail below with reference to the drawings. However, the dimensions, materials, shapes, relative arrangements, and the like of the components described in this embodiment are not intended to limit the scope of the present invention thereto unless otherwise specified. Absent.

FIG. 1 is a schematic sectional view of the structure of an electron-emitting device according to an embodiment of the present invention.

For the sake of simplicity, the same components as those shown in the above description of the prior art will be denoted by the same reference numerals.

As shown in the figure, in the present embodiment, a porous silica film 5 and a thin film 7 are provided in addition to the basic structure described in the above-mentioned prior art.

That is, in the electron-emitting device according to the embodiment of the present invention, a material having a low electron scattering probability is formed in the hole formed by the gate electrode and the emitter of the FE type electron source at the same height as the upper surface of the gate electrode. 1 and a conductive film (thin film 7) having a thickness smaller than the mean free path of electrons is laminated on the entire surface of the gate electrode as shown in FIG. It is characterized by having become.

As a result, the equipotential surface formed between the anode and the gate electrode became parallel to the surface of the gate electrode as shown in FIG. 1, and came out of the hole below the gate electrode through the conductive film. Electrons can reach the anode electrode without beam spreading.

Here, the material to be filled in the hole below the gate electrode is desirably a structural material having as small an electron scattering as possible and having a mechanical strength capable of forming a conductive film thereon.

That is, a material having a skeleton structure with as high a porosity as possible is required.

As a candidate for this material, a porous silica film can be cited.

As a method for producing porous silica, a method using a sol-gel method is known.

In a solvent, silicon alkoxide (TEO)
(S, TMOS) to form a wet gel composed of SiO ₂ .

The wet gel contains a solvent in a skeleton consisting of a three-dimensional network of Si—O—Si bonds.

When the solvent is air-dried as it is, the silica skeleton is broken by the surface tension acting on the skeleton, and a silica film having a high density is obtained.

In order to remove the solvent while maintaining the silica skeleton, a method of reducing the surface tension to zero by a supercritical drying method or a surface modification method of hydrophobically treating the surface of the skeleton is known.

The porous silica thus obtained has pores of about 100 ° inside.

The porosity is controlled by the amount of the diluting solvent, and a maximum of 99.9% can be prepared.

As described above, since the porosity is increased to nearly 100%, the probability that electrons emitted from the emitter electrode are scattered before passing through the upper electrode is very small.

Further, since the dielectric constant can be made substantially 1, even if the hole is filled, the capacitance does not increase and the switching speed does not decrease.

Further, by filling the hole with porous silica, the ratio of the electron emission point of the emitter directly exposed to the vacuum is reduced, and the residual gas is adsorbed on the electron emission portion to change the electron emission characteristics. The FE element has an effect of reducing a remarkable deterioration phenomenon.

[0059]

EXAMPLES (First Example) Hereinafter, more specific examples based on the above embodiment will be described.

The steps up to the point where the FE type electron source is produced are the same as those in the ordinary manufacturing method.

Referring to FIG. 2, a method for manufacturing an electron-emitting device and an electron-emitting device according to the first embodiment of the present invention will be described.

The illustrated example shows a method for manufacturing a Spindt-type electron source.

First, a conductive cathode film 2, a resistance film 8 made of amorphous silicon, an insulating film (thickness: about 1 μm) 3 made of SiO ₂ , and a gate electrode film 6 are sequentially formed on a glass substrate 1 (FIG. 2A). )).

The conductive cathode film 2 and the gate electrode film 6 constitute a pair of electrodes.

Next, the gate to a hole diameter of about 1μm by ion etching method (FIG. 2 (b)), then SiO ₂
Only the layer is removed by etching or ion etching (FIG. 2C).

As a result, a hole 61 is formed in the gate electrode film 6, which is one of the electrodes, and the hollow portion 3 is formed in the insulating film 3.
2 are formed.

Next, after a Ni sacrificial layer 9 is formed on the gate (FIG. 2D), the material of the Spindt-type cold cathode, M
o is formed.

Then, Mo is deposited in the hollow portion 32, and a conical structure (electron emission portion 4) having a sharp tip is naturally formed (FIG. 2E).

The unnecessary Mo layer formed on the Ni film can be simultaneously peeled off by removing the Ni layer, and a Spindt-type cold cathode is completed (FIG. 2 (f)).

Next, the porous silica (film) 5 is filled in the hollow portion 32 in which the cold cathode is formed.

First, a raw material solution of porous silica is prepared.

As a first solution, TEOS (tetraethoxysilane), ethanol, water, and hydrochloric acid were used in a molar ratio of 1: 3.
The mixture was mixed at a ratio of 8: 1.1: 0.0007.

Thereafter, the mixture was refluxed at 60 ° C. for 90 minutes.

This mixed solution, 0.2 M ammonia water and ethanol were mixed at a volume ratio of 10: 1: x,
Stir for 15 minutes.

Here, x is a dilution amount of ethanol and is changed in a range of 10 to 50.

The viscosity of the liquid immediately after mixing was about 2 mPa · sec, showing almost the same viscosity as water.

This solution was flowed on a substrate on which a cold cathode held horizontally was formed, and the mixture was filled in the hole of the cold cathode.

Thereafter, the substrate was slightly tilted, and the liquid was allowed to flow away from the surface of the gate electrode.

In this way, only the hollow portion 32 was filled with the raw material solution of porous silica (solution filling step).

Next, in order to gel the filled liquid without evaporating the solvent, the substrate was placed in a container saturated with ethanol vapor and gelled for several hours (gelling step).

After gelation, the substrate was immersed in an ethanol solution to ripen the gel.

Next, this substrate was placed in an autoclave, and ethanol contained in the gel was replaced with liquid CO ₂ .

Thereafter, the temperature was raised to 40 ° C., and the internal pressure was set to 90 atm.

In this state, the supercritical condition of CO ₂ (31 ° C.,
(72.8 atm) or more, so that CO ₂ in the film is a supercritical fluid without surface tension.

After maintaining in the supercritical state for 15 minutes, the temperature was raised to 40
While keeping the temperature at 0 ° C., CO ₂ was gradually discharged to return the pressure to 1 atm.

Subsequently, the temperature was gradually lowered and returned to room temperature, and the substrate was taken out of the autoclave.

Since the hydroxyl group and the alkyl group are adsorbed in the porous silica in this state, the porous silica is annealed at 450 ° C. for 2 hours in a nitrogen gas to desorb these adsorbed substances (the above-mentioned treatments). Process).

With the above-described method, porous silica could be filled in the hollow portion 32 of the cold cathode.

When the inside of the hollow portion was observed using a scanning electron microscope, it was confirmed that the porous silica was embedded to the same position as the upper surface of the gate electrode (FIG. 2).
(G)).

Next, a gold film (thin film 7) having a thickness of 10 nm was formed on the entire surface of the substrate by a vapor deposition method (vapor deposition step).

As a result, a flat gate electrode film having no unevenness on the surface could be obtained (FIG. 2 (h)).

The above element was put in a vacuum apparatus, and 10 ^-6
Evacuated to Torr.

A voltage was applied between the cathode film and the gate electrode film with the gate electrode being positive, and the gate current flowing therethrough was monitored.

At the same time, an anode plate was set at a position 5 mm above the substrate.

The anode plate was formed by laminating an ITO conductive film and a phosphor film on a glass substrate. The voltage of 1 kV was applied to measure the emission current, and at the same time, the size of the light emitting point of the phosphor was measured.

For comparison, an electron-emitting device in which holes were not filled with porous silica was also experimentally manufactured, and the same measurement as above was performed.

The table shown in FIG. 8 summarizes the electron emission characteristics with respect to the porosity of the porous silica film thus obtained.

The porosity was calculated from the X-ray reflectivity of one pattern formed using the same solution, and the film density was calculated from the density of the film and the density of bulk silica (2.2 g / cc).

As can be seen from the table, the higher the porosity, the better the electron emission characteristics.

The size of the light emitting point was much smaller than that of a normal FE element, and it was confirmed that the potential distribution was flattened by the electrode film provided on the hole.

(Second Embodiment) In the first embodiment, an example in which the hollow portion is filled with porous silica has been described for the configuration in the case of the Spindt-type electron source, but the present invention is applied to the configuration in such a case. The present invention is not limited to this, and as another example, in this embodiment, a configuration in the case of a diamond electron source will be described in which a hollow portion is filled with porous silica.

First, a conductive cathode film made of Pt is formed on a glass substrate.

This substrate is immersed in an acetone solvent in which diamond particles are suspended, and subjected to ultrasonic treatment.

By this operation, nuclei for forming a diamond film are formed on the entire surface of the Pt film.

The nuclear density is determined by the degree of suspension of the diamond particles and the ultrasonic treatment time.

Next, an insulating film made of SiO ₂ (having a thickness of about 1
μm) and a gate electrode film are sequentially formed, and a hole having a diameter of about 1 μm is formed in the gate electrode by ion etching.
Thereafter, only the SiO ₂ layer is removed by etching or ion etching.

In this way, Pt is filled in the hole (hollow portion).
Expose the electrodes.

This substrate is exposed to plasma generated by applying a high-frequency voltage to a mixed gas of methane gas and hydrogen.

As a result, diamond nuclei are generated only on the surface of the Pt electrode exposed in the hole, and no film is formed on the gate electrode.

The resulting diamond film is not a continuous film but a fine particle film having facets made of crystal faces exposed, and thus has a shape suitable for electron emission.

Next, the hollow portion was filled with porous silica in the same manner as in the first embodiment, and thereafter an Au electrode film was formed on the entire surface, whereby an electron emission source with a small beam spread could be obtained.

(Third Embodiment) In the present embodiment, an example in which a hollow portion is filled with porous silica will be described for the configuration of an electron source using carbon nanotubes.

In this embodiment, an example will be described in which the inside of the hole of the electron source using carbon nanotubes is filled with porous silica.

A conductive cathode film made of Pt is formed on a glass substrate.

Next, an insulating film made of SiO ₂ (about 1 μm thick)
m) and a gate electrode film are sequentially formed, a hole having a diameter of about 1 μm is formed in the gate electrode by ion etching, and then only the SiO ₂ layer is removed by etching or ion etching.

In this way, Pt is filled in the hole (hollow portion).
Expose the electrodes.

The substrate was kept at 550 ° C., and was exposed to a mixed gas atmosphere of ethylene gas and argon gas for 2 hours.

As a result, carbon nanotubes were formed only on the Pt electrode which is a catalytic metal, so that carbon nanotubes were formed only inside the hollow portion.

The obtained carbon nanotube film does not become a continuous film but has a very thin columnar structure, and thus has a shape suitable for electron emission.

Next, the hole was filled with porous silica in the same manner as in the first embodiment, and thereafter an Au electrode film was formed on the entire surface, whereby an electron emission source with a small beam spread could be obtained.

(Fourth Embodiment) In the above-described embodiment and the first to third embodiments, the electron-emitting device has been described.

As an application of the FE type electron-emitting device configured as described above, in which the electron beam does not spread, it can be suitably applied to, for example, a flat display device capable of displaying a high-definition image.

In this embodiment, a case where the electron-emitting device having the above structure is applied to a flat display device will be described with reference to FIG.

FIG. 3 is a schematic perspective view for explaining a method of manufacturing a flat display device according to this embodiment.

In the present embodiment, as shown in FIG. 3, the flat display device generally includes an electron emission source 31 in which the electron emission elements described in the first embodiment are integrated, and an electron emission source 31. And a display unit 30 that receives light emitted from the device and performs light-emitting display.

A method for manufacturing this electron emission source will be described with reference to FIG.

First, the conductive cathode film formed on the substrate 1 and the resistive layer made of amorphous silicon are etched to form a large number of strip-shaped base electrodes 2 adjacent in the X direction.
An address line is created by dividing it into ones.

On this, an SiO ₂ insulating layer 3 is formed with a thickness of 1 μm on the entire surface, and further, the gate electrode 22 is also laminated on the entire surface.

Thereafter, the gate electrode film is divided into strips by etching so as to be adjacent in the y direction orthogonal to the base electrode.

Thus, a data line is created.

At the time of this etching, a hole 23 for forming the FE type electron-emitting portion described in the first embodiment is formed in the gate electrode at the intersection of the address line and the data line.

Since the diameter of the hole is 1 μm, the intersection plane is about 5 μm.
In the case of 0 μm square, one hole of about 100 (10 × 10)
Form pixels.

Next, using the same process as in the first embodiment, only the SiO ₂ layer in the hole is removed by etching or ion etching (a hollow portion is formed).

After forming a Ni sacrificial layer on the entire surface, Mo is subsequently formed to form a Mo tip in the hollow portion.

Thereafter, the Mo film on the entire surface is removed by removing the Ni layer.

After filling the hollow portion with porous silica in the same manner as in the first embodiment, a 10 nm thick A
An electron-emitting device is formed by forming a u-electrode (thin film 7).

Through the above steps, an electron emission source 31 obtained by integrating a large number of electron-emitting devices in a matrix can be obtained.

On the other hand, the display section 30 is composed of a transparent substrate 26, a light emitting phosphor 25 applied thereon, and a metal film (metal back) 24 formed thereon.

[0139] The metal back surface of the display section and the electron emission source are arranged so as to face each other, and they are bonded to each other with an outer frame (not shown) therebetween, thereby forming a vacuum container.

In the flat display device thus configured, each of the above-described electron-emitting devices constitutes one pixel.

In the flat display device, a driving method similar to that of an active matrix type liquid crystal display device using TFTs can be employed.

That is, the address line constituted by the base electrode and the data line constituted by the conductive film are respectively connected to a drive driver.

Then, by operating this driver, an arbitrary address line and data line are selected and a voltage is applied to emit electrons from the electron-emitting devices provided at the intersections of the respective lines.

At this time, when a high voltage is applied to the metal film 24 provided in the display section 30, the emitted electrons are attracted to the metal film 24, pass through the metal film 24, and pass therethrough. Can emit light.

[0145]

As described above, according to the present invention, since the hole for emitting electrons to the outside is closed by the conductive thin film, the potential distribution formed near the hole is reduced with respect to the electrode plane. In this case, diffusion (emission distribution) of emitted electrons can be suppressed with a simple configuration, and the quality is excellent.

When the thickness of the thin film is made smaller than the length of the mean free path of the electrons emitted from the electron emitting portion, it is possible to prevent the electrons from being caught by the thin film.

[0147] If the hollow portion provided with the electron emission portion is filled with porous silica, scattering of electrons in the hollow portion can be suppressed.

Further, by applying an electron-emitting device which suppresses the diffusion (beam spread) of emitted electrons to the flat display and is excellent in quality as described above, a high-definition image can be displayed.

[Brief description of the drawings]

FIG. 1 is a basic schematic configuration diagram of an electron-emitting device according to an embodiment of the present invention and a potential distribution diagram thereof.

FIG. 2 is a diagram illustrating a method of manufacturing an electron-emitting device according to a first embodiment of the present invention.

FIG. 3 is a schematic perspective view illustrating a method of manufacturing a flat display device according to a fourth embodiment of the present invention.

FIG. 4 is a schematic sectional view of a basic field emission (FE) type electron-emitting device.

FIG. 5 is a schematic cross-sectional view of a basic field emission (FE) type electron-emitting device.

FIG. 6 is a diagram showing a potential distribution on a gate electrode of a basic field emission (FE) type electron-emitting device.

FIG. 7 is a schematic sectional view of a field emission (FE) type electron-emitting device provided with a focusing electrode.

FIG. 8 is a table showing electron emission characteristics with respect to porosity of a porous silica film.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate 2 Conductive cathode film 3 Insulating film 32 Hollow part 4 Electron emission part 5 Porous silica film 6 Gate electrode (film) 61 Hole 7 Thin film (Data electrode) 8 Resistance film 9 Sacrificial film 10 Film form (Emission part) DESCRIPTION OF SYMBOLS 11 Insulating film 12 Focusing electrode 21 Base electrode (address line) 22 Gate electrode (data line) 23 Hole 24 Metal film (metal back) 25 Phosphor 26 Glass substrate 30 Display part 31 Electron emission source

Claims (10)

[Claims] 1. An electron-emitting device comprising: a pair of electrodes; and an electron-emitting portion provided between the pair of electrodes, wherein an electron emitted from the electron-emitting portion is included in the pair of electrodes. An electron-emitting device for emitting electrons from a hole formed in one of the electrodes to the outside, wherein a conductive thin film that covers the hole is provided. 2. The electron-emitting device according to claim 1, wherein a thickness of said thin film is smaller than a length of a mean free path of electrons emitted from said electron-emitting portion. 3. An insulating layer is provided between the pair of electrodes, a hollow portion communicating with the hole is formed in the insulating layer, and the electron emitting portion is provided in the hollow portion. The electron-emitting device according to claim 1 or 2, wherein 4. The electron-emitting device according to claim 1, wherein said hollow portion is filled with porous silica. 5. The porosity of the porous silica is 85% or more and 1% or less.
The electron-emitting device according to claim 4, wherein the electron-emitting device is less than 00%. 6. The electron-emitting device according to claim 1, wherein said electron-emitting portion includes a diamond fine particle film. 7. The electron-emitting device according to claim 1, wherein said electron-emitting portion includes a carbon nanotube film. 8. A porous silica raw material solution is filled into a hollow portion formed in an insulating layer provided between a pair of electrodes through a hole formed in one of the pair of electrodes. A solution filling step, a gelling step of gelling the solution filled in the solution filling step, a treatment step of extracting a solvent while maintaining a skeleton of silica formed in the gelling step, After porous silica is formed in the hollow portion by the filling step, the gelling step, and the processing step, a conductive thin film is deposited on the electrode surface where the holes are formed and on the porous silica surface exposed from the holes. A method for manufacturing an electron-emitting device, comprising: a vapor deposition step. 9. An electron-emitting device according to claim 1, wherein a plurality of the electron-emitting devices are arranged, and a display unit that performs light-emitting display by receiving electrons emitted from the electron-emitting devices is provided. A flat display, comprising: 10. A method for manufacturing an electron-emitting device according to claim 8, wherein a plurality of electron-emitting devices are formed in a matrix and the electron-emitting devices are arranged at positions facing the electron-emitting devices formed in a matrix. A method of manufacturing a flat panel display, comprising: providing a display unit for displaying light emission by electrons emitted from an element.