JP2000293821A - Spin bulb thin film magnetic element, its production, and thin film magnetic head - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a spin bulb thin film magnetic element which is superior in stability to satisfactorily control the magnetic domain of a free magnetic layer. SOLUTION: A spin bulb type thin film magnetic element 1 is provided with a laminated body 10 consisting of a free magnetic layer 12, a nonmagnetic conductive layer 13, and a fixed magnetic layer 14, bias layers 16 which are placed on both sides of the laminated body 10 and aligns the direction of magnetization of the free magnetic layer 12, an anti-ferromagnetic layer 18 which fixes the direction of magnetization of the fixed magnetic layer 14 by an exchange coupling magnetic field, and a pair of conductive layers 20 which give a detection current to the free magnetic layer 12. The bias layers 16 are provided on a substrate 7 and are placed in the same hierarchy as the laminated body 10, and the anti-ferromagnetic layer 18 is so laminated that it may be brought into contact with at least a part of bias layers and the laminated body 10.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a spin-valve thin-film magnetic element in which a fixed magnetic layer and an antiferromagnetic layer are laminated on a free magnetic layer, a thin-film magnetic head provided with the spin-valve thin-film magnetic element, and The present invention relates to a method for manufacturing a spin-valve thin-film magnetic element.

[0002]

2. Description of the Related Art A magnetoresistive head has an MR (Magnetoresistive) having an element exhibiting a magnetoresistive effect.
GMR with head and element showing giant magnetoresistance effect
(GiantMagnetoresistive) head. In the MR head, the element exhibiting the magnetoresistance effect has a single-layer structure made of a magnetic material. On the other hand, the GMR head has a multilayer structure in which elements exhibiting a magnetoresistance effect are formed by laminating a plurality of materials. There are several types of structures that produce the giant magnetoresistance effect. A spin-valve thin-film magnetic element has a relatively simple structure and a high resistance change rate to an external magnetic field. The spin valve thin film magnetic element includes a single spin valve thin film magnetic element and a dual spin valve thin film magnetic element.

FIG. 28 is a sectional view of a conventional spin-valve thin-film magnetic element viewed from a magnetic recording medium side. A shield layer is formed above and below the conventional spin-valve thin-film magnetic element via a gap layer, and the spin-valve thin-film magnetic element, the gap layer and the shield layer constitute a GMR head for reproduction. Have been. Note that an inductive head for recording may be laminated on the GMR head for reproduction. The GMR head is provided together with the inductive head at the trailing end of the flying slider to constitute a thin-film magnetic head, and detects a recording magnetic field of a magnetic recording medium such as a hard disk. In FIG. 28, the moving direction of the magnetic recording medium is the Z direction in the figure, and the direction of the leakage magnetic field from the magnetic recording medium is the Y direction.

In FIG. 28, reference numeral 73 denotes a spin-valve thin-film magnetic element. The spin-valve thin-film magnetic element 73 is a so-called top-type single spin-valve thin-film magnetic element in which a free magnetic layer, a nonmagnetic conductive layer, a fixed magnetic layer, and an antiferromagnetic layer are sequentially stacked one by one. In FIG. 28, reference numeral 111 indicates an underlayer formed of, for example, Ta (tantalum). A free magnetic layer 112 is stacked on the underlayer 111, and a nonmagnetic conductive layer 113 made of Cu or the like is stacked on the free magnetic layer 112. A fixed magnetic layer 114 is stacked thereon, an antiferromagnetic layer 118 is stacked on the fixed magnetic layer 114, and a protective layer 119 made of Ta or the like is formed on the antiferromagnetic layer 118. Are laminated. Thus, the underlayer 11
1 to a protective layer 119 are sequentially laminated to form a laminate 110
Is composed. The antiferromagnetic layer 118 is
4 and the pinned magnetic layer 114 and the antiferromagnetic layer 1
An exchange coupling magnetic field (exchange anisotropic magnetic field) is generated at the interface with, and the magnetization direction of the fixed magnetic layer 114 is fixed in the Y direction in the figure.

[0005] On both sides of the laminate 110, for example, Co-P
a bias layer 116 made of a t (cobalt-platinum) alloy,
116 are formed. The bias layers 116 and 11
Numeral 6 is for aligning the magnetization direction of the free magnetic layer 112 with the X1 direction in the drawing to make the free magnetic layer 112 a single magnetic domain, thereby suppressing Barkhausen noise. This allows
The magnetization direction of the free magnetic layer 112 and the fixed magnetic layer 1
14 intersects with the magnetization direction.

Reference numeral 120 indicates a conductive layer formed of Cu or the like. Further, between the bias layer 116 and the substrate 7 and between the bias layer 116 and the stacked body 110, a bias underlayer 117 made of, for example, a nonmagnetic metal such as Cr is provided. Further, the bias layer 11
Between the conductive layer 6 and the conductive layer 120, an intermediate layer 115 made of, for example, a nonmagnetic metal such as Ta or Cr is provided.

In the spin-valve thin-film magnetic element 73, when the magnetization direction of the free magnetic layer 112 aligned in the X1 direction changes due to a leakage magnetic field from a recording medium such as a hard disk, the fixed direction fixed in the Y direction in the drawing. The electric resistance changes in relation to the magnetization of the magnetic layer 114, and the leakage magnetic field from the recording medium is detected by a voltage change based on the change in the electric resistance value.

[0008]

Incidentally, in the conventional spin-valve thin-film magnetic element 73, a part of the bias layers 116, 116 rides on the inclined side surface 110a of the stacked body 110 via the bias underlayer 117. ,
It protrudes in a direction away from the substrate 7. The cross-sectional shape of this portion is such that the thickness decreases as the distance from the substrate 7 increases, and the bias layer 1 near the upper surface of the stacked body 110
The tip portions 116a, 116a of the 16, 16 have a sharp cross-sectional shape.

For this reason, as shown in FIG. 29, the leakage magnetic flux from the tip portion 116a of one bias layer 116 passes through the upper shield layer laminated on the spin-valve thin film magnetic element 73, and then the other. The magnetic field (arrow A in the drawing) easily reaches the bias layer 116, and the free magnetic layer 112
However, there is a disadvantage that the effective magnetic field applied to the substrate decreases. Therefore, it is difficult to control the magnetic domain of the free magnetic layer 112 satisfactorily, and the stability is poor.

Further, another leakage magnetic field from the tip portions 116a, 116a of the bias layers 116, 116 becomes a demagnetizing field (arrows B and C in the drawing) of the bias layer 116 and is applied to both ends of the free magnetic layer 112. The direction of the demagnetizing field (arrows B and C) is determined by the bias layers 116 and 116.
The direction of the magnetization of the free magnetic layer 112 (arrow D in the drawing) is different from that of the free magnetic layer 112, so that the free magnetic layer 112 is multi-domain and Barkhausen noise increases, which is a problem.

The present invention has been made in view of the above circumstances, and it is difficult for the effective magnetic field applied to the free magnetic layer to decrease, and the free magnetic layer is not multi-domain. It is an object of the present invention to provide a spin-valve thin-film magnetic element which is excellent in stability and can control the magnetic domain well. It is another object of the present invention to provide a method for manufacturing the spin-valve thin-film magnetic element. Another object of the present invention is to provide a thin-film magnetic head including the spin-valve thin-film magnetic element.

[0012]

In order to achieve the above object, the present invention employs the following constitution. The spin-valve thin-film magnetic element according to the present invention includes: a laminated body including at least a free magnetic layer, a nonmagnetic conductive layer, and a fixed magnetic layer laminated on a substrate; and the free magnetic layer located on both sides of the laminated body. A pair of bias layers for aligning the magnetization directions of the fixed magnetic layers in one direction, and contacting the fixed magnetic layer to fix the magnetization direction of the fixed magnetic layer in a direction crossing the magnetization direction of the free magnetic layer by an exchange coupling magnetic field. An antiferromagnetic layer and a pair of conductive layers that apply a detection current to the free magnetic layer, and the pair of bias layers are provided on the substrate and are positioned on the same layer as the stacked body, The antiferromagnetic layer is stacked in contact with at least a part of the bias layer and the stacked body. Further, it is preferable that an upper surface of the bias layer is substantially flush with an upper surface of the laminate. It is preferable that the antiferromagnetic layer is stacked in contact with the entire hard bias layer and the stacked body. Further, the antiferromagnetic layer may be formed wider than the stacked body in contact with the upper surface of the stacked body, and may be stacked in contact with a part of the pair of bias layers.

In the above-described spin-valve thin-film magnetic element, the bias layer is located at the same level as that of the laminate, and the upper surface thereof is substantially flush with the upper surface of the laminate.
Further, since the antiferromagnetic layer is laminated on the bias layer and the laminated body, unlike a conventional spin-valve thin-film magnetic element, a part of the bias layer has a protruding and sharp cross section. In addition, since the free magnetic layer does not have multiple magnetic domains due to the leakage magnetic field from the bias layer, Barkhausen noise of the free magnetic layer can be reduced. Here, "the bias layer is located at the same level as the laminate" means that the bias layer and the laminate are stacked at substantially the same level with respect to the substrate. The case where the thickness of the layer is smaller than the thickness of the laminate is also included.

Further, a spin-valve thin-film magnetic element according to the present invention is the spin-valve thin-film magnetic element described above,
The laminate is formed by laminating the free magnetic layer, the nonmagnetic conductive layer, the fixed magnetic layer, and the antiferromagnetic thin film,
The antiferromagnetic layer is in contact with the antiferromagnetic thin film. Further, it is preferable that the materials constituting the antiferromagnetic thin film and the antiferromagnetic layer have the same composition.

In the above-described spin-valve thin-film magnetic element, the pinned magnetic layer and the antiferromagnetic thin film are laminated at the same time in advance, so that no impurities are mixed into the interface between these layers. When the layers are integrated, an exchange coupling magnetic field is easily generated at the interface between the fixed magnetic layer and the antiferromagnetic thin film, and the magnetization direction of the fixed magnetic layer can be firmly fixed in a predetermined direction. .

Further, a spin-valve thin-film magnetic element according to the present invention is the above-described spin-valve thin-film magnetic element,
A ferromagnetic thin film is provided at least between the laminate and the antiferromagnetic layer.

In the above-described spin-valve thin film magnetic element, the ferromagnetic thin film and the antiferromagnetic layer are simultaneously laminated, so that no impurities are mixed into the interface between the ferromagnetic thin film and the antiferromagnetic layer. , An exchange coupling magnetic field easily appears between the antiferromagnetic layer and the ferromagnetic thin film,
This exchange coupling magnetic field is applied to the fixed magnetic layer via the ferromagnetic thin film, so that the magnetization direction of the fixed magnetic layer can be fixed in a predetermined direction.

The antiferromagnetic layer is made of X-Mn (X
Represents one element selected from Pt, Pd, Ru, Ir, Rh, and Os. ), And X is preferably in the range of 37 atomic% to 63 atomic%. Further, the antiferromagnetic layer is made of X′-Pt.
-Mn (where X 'is Pd, Cr, Ru, Ni, I
One or more elements selected from r, Rh, Os, Au, and Ag are shown. ), And the total amount of X ′ and Pt may be in the range of 37 atomic% to 63 atomic%. Further, the antiferromagnetic thin film is made of X-Mn (where X is Pt, Pd, Ru, I
One element selected from r, Rh, and Os is shown. ), And X is preferably in the range of 37 atomic% to 63 atomic%. Furthermore,
The antiferromagnetic thin film is X'-Pt-Mn (where X '
Represents Pd, Cr, Ru, Ni, Ir, Rh, Os, A
One or two or more elements selected from u and Ag. X 'and Pt
May be in the range of 37 atomic% or more and 63 atomic% or less.

X-Mn is used for the antiferromagnetic layer and the antiferromagnetic thin film.
Or an alloy represented by the formula of X'-Pt-Mn, a NiO alloy, a FeMn alloy, which has been conventionally used for the antiferromagnetic layer, Compared to those using a NiMn alloy or the like, a spin-valve thin-film magnetic element having a large exchange coupling magnetic field, a high blocking temperature, and excellent properties such as excellent corrosion resistance can be obtained. .

The spin-valve thin-film magnetic element of the present invention comprises:
The spin-valve thin-film magnetic element described above, wherein the antiferromagnetic layer is stacked in contact with the entire bias layer and the stacked body, and the pair of conductive layers are separated from each other and the antiferromagnetic layer It is characterized by being laminated on top. This conductive layer is preferably laminated at a position that does not overlap with the laminate. When the pair of conductive layers are stacked so as to be separated from each other at a position not overlapping with the stacked body, it is possible to reliably apply the detection current to the stacked body.

The antiferromagnetic layer is formed to be wider than the stacked body in contact with the upper surface of the stacked body, and is stacked so as to be in contact with a part of the pair of bias layers. May be adjacent to both sides of the antiferromagnetic layer and stacked on the bias layer. In this case, the conductive layer and the bias layer are adjacent, and the bias layer is a nonmagnetic conductive layer. Because it is adjacent to the layered body containing, the detection current from the conductive layer can be supplied to the nonmagnetic conductive layer without passing through the antiferromagnetic layer having a large specific resistance, and the amount of change in the magnetoresistance due to the external magnetic field And the detection sensitivity of the spin-valve thin-film magnetic element can be increased.

The spin-valve thin-film magnetic element of the present invention is the spin-valve thin-film magnetic element described above,
Ta or Cr between the bias layer and the conductive layer and / or between the bias layer and the antiferromagnetic layer.
And an intermediate layer comprising: Ta,
By providing an intermediate layer made of a non-magnetic material such as Cr, the bias magnetic field necessary for forming a single magnetic domain in the free magnetic layer can be increased without magnetic coupling between the bias layer and the antiferromagnetic layer. be able to. In addition, it is possible to prevent thermal diffusion between the conductive layer and the bias layer caused by heat treatment (UV curing) in a manufacturing process of the inductive head, which is a later step, and to prevent deterioration of magnetic properties of the bias layer.

Further, a spin-valve thin-film magnetic element according to the present invention is the spin-valve thin-film magnetic element described above,
A bias underlayer made of Cr is provided between the bias layer and the stacked body and between the bias layer and the substrate. By providing a bias underlayer made of Cr having a body-centered cubic structure (bcc structure), the bias layer can be epitaxially grown on the bias underlayer and the easy axis of the bias layer can be aligned in a predetermined direction. As a result, the coercive force and the squareness ratio of the bias layer are increased, and the bias magnetic field required for making the free magnetic layer a single magnetic domain can be increased.

Further, the free magnetic layer includes a non-magnetic intermediate layer, a first free magnetic layer and a second free magnetic layer sandwiching the non-magnetic intermediate layer.
A free magnetic layer, wherein the first free magnetic layer and the second free magnetic layer are antiferromagnetically coupled to each other, and a magnetization direction of the first free magnetic layer and a magnetization direction of the second free magnetic layer. May be antiparallel to each other. At this time, the first and second free magnetic layers preferably have slightly different thicknesses. Further, the fixed magnetic layer includes another non-magnetic intermediate layer, a first fixed magnetic layer and a second fixed magnetic layer sandwiching the another non-magnetic intermediate layer,
The first pinned magnetic layer and the second pinned magnetic layer are antiferromagnetically coupled to each other such that the magnetization direction of the first pinned magnetic layer and the magnetization direction of the second pinned magnetic layer are antiparallel to each other. May be available. At this time, it is preferable that the first and second pinned magnetic layers have slightly different thicknesses.

When the free magnetic layer is composed of first and second free magnetic layers antiferromagnetically coupled via a non-magnetic intermediate layer, the first and second free magnetic layers are magnetically coupled by an exchange coupling magnetic field. To a ferrimagnetic state. At this time, for example, if the thickness of the first free magnetic layer is slightly larger than that of the second free magnetic layer, the magnetization direction of the first free magnetic layer is aligned in a certain direction by the magnetization of the bias layer, and The magnetization direction of the magnetic layer is opposite to the magnetization direction of the first free magnetic layer. Therefore, although the magnetic moments of the first and second free magnetic layers cancel each other, the first
Since the thickness of the free magnetic layer is larger than that of the second free magnetic layer, the magnetization corresponding to the difference in the thickness becomes the magnetization of the free magnetic layer, and the magnetization becomes smaller. The magnetization direction of the magnetic layer changes with high sensitivity.

When the fixed magnetic layer is composed of first and second fixed magnetic layers antiferromagnetically coupled via a non-magnetic intermediate layer, the first and second fixed magnetic layers are formed by an exchange coupling magnetic field. It is magnetically coupled to a ferrimagnetic state. At this time,
When the thicknesses of the first and second pinned magnetic layers are slightly different,
Even if the magnetic moments of the first and second pinned magnetic layers cancel each other, a small amount of spontaneous magnetization of the pinned magnetic layer remains, and this spontaneous magnetization is further amplified by the exchange coupling magnetic field with the antiferromagnetic layer, It is possible to firmly fix the magnetization direction of the layer.

Further, a thin-film magnetic head according to the present invention is characterized in that a slider is provided with the spin-valve thin-film magnetic element according to any one of claims 1 to 13.

In the method of manufacturing a spin-valve thin-film magnetic element according to the present invention, at least a free magnetic layer, a nonmagnetic conductive layer, and a fixed magnetic layer are laminated on a substrate to form a laminated precursor.
Forming a first lift-off resist on the laminated precursor;
A laminate is formed by removing the laminate precursor that is not covered with the first lift-off resist and exposing the substrate, a bias layer is laminated on the exposed substrate, and the upper surface thereof is laminated with the laminate. At the same position as the upper surface of
The first lift-off resist is removed, an antiferromagnetic layer is laminated on at least a part of the bias layer and the laminate, and a pair of conductive layers is formed in contact with the antiferromagnetic layer. And

In the above manufacturing method, before the antiferromagnetic layer is laminated, the oxide layer on the upper surface of the laminate (in this case, the upper surface of the fixed magnetic layer) is etched by means such as ion milling or reverse sputtering. Is preferred.

In the above manufacturing method, when forming the bias layers on both sides of the laminate, the bias layers are laminated so that the upper surface of the bias layer is substantially at the same position as the upper surface of the laminate. Since the ferromagnetic layers are stacked, the cross-sectional shape of a part of the bias layer does not become protruding and sharp as in the related art, and the free magnetic layer is not multi-domaind by the leakage magnetic field from the bias layer. In addition, it becomes possible to manufacture a spin-valve thin-film magnetic element in which the free magnetic layer is formed into a single magnetic domain. Also, since the removal of the first lift-off resist is usually performed at atmospheric pressure, the laminate (fixed magnetic layer)
If an impurity such as oxygen in the atmosphere adheres to the upper surface of the layer and the antiferromagnetic layer is laminated as it is, the expression of the exchange coupling magnetic field is inhibited by the influence of the impurity. Therefore, if the upper surface of the pinned magnetic layer is etched before stacking the antiferromagnetic layer, the impurities are removed and the exchange coupling magnetic field can be developed.

In the method of manufacturing a spin-valve thin-film magnetic element according to the present invention, as the lamination precursor, the free magnetic layer, the non-magnetic conductive layer, the fixed magnetic layer, and the antiferromagnetic thin film are laminated. The antiferromagnetic layer may be stacked in contact with the antiferromagnetic thin film. At this time, it is preferable that the material of the antiferromagnetic thin film and the material of the antiferromagnetic layer are the same. Also in this case, it is preferable to etch the oxide layer on the upper surface of the stacked body (in this case, the upper surface of the antiferromagnetic thin film) by means such as ion milling or reverse sputtering before stacking the antiferromagnetic layer.

In the above manufacturing method, since the pinned magnetic layer and the antiferromagnetic thin film are simultaneously laminated, impurities such as oxygen do not enter the interface between them, and the antiferromagnetic layer is formed on the antiferromagnetic thin film. Since the antiferromagnetic thin film is substantially included in the antiferromagnetic layer by laminating and integrating them, an exchange coupling magnetic field is generated at the interface between the fixed magnetic layer and the antiferromagnetic thin film, A spin-valve thin-film magnetic element having a fixed magnetic layer whose magnetization direction is firmly fixed by the exchange coupling magnetic field can be manufactured. Further, by etching the upper surface of the stacked body (antiferromagnetic thin film) before stacking the antiferromagnetic layer, impurities such as oxygen are removed, and the antiferromagnetic thin film and the antiferromagnetic layer are integrated and exchanged. Deterioration of the coupling magnetic field is prevented.

Further, in the method of manufacturing a spin-valve thin-film magnetic element according to the present invention, after removing the first lift-off resist, a ferromagnetic thin film is formed on at least the laminate, and the ferromagnetic thin film is formed on the ferromagnetic thin film. Ferromagnetic layers may be stacked. At this time, it is preferable that the material of the pinned magnetic layer and the material of the ferromagnetic thin film forming the upper surface of the laminate are the same. In this case, it is preferable to etch the upper surface of the stacked body (in this case, the upper surface of the pinned magnetic layer) by means such as sputtering before stacking the ferromagnetic thin films.

In the above-described manufacturing method, since the ferromagnetic thin film and the antiferromagnetic layer are formed simultaneously, impurities such as oxygen are not mixed into the interface between the ferromagnetic thin film and the antiferromagnetic layer. In this case, the exchange coupling magnetic field is easily developed, and the ferromagnetic thin film is laminated on the fixed magnetic layer, and these are integrated, so that the ferromagnetic thin film is substantially contained in the fixed magnetic layer. The exchange coupling magnetic field can firmly fix the magnetization direction of the fixed magnetic layer. Further, by etching the upper surface of the laminated body (fixed magnetic layer) before laminating the ferromagnetic thin film, impurities such as oxygen are removed, and the fixed magnetic layer and the ferromagnetic thin film are substantially integrated with each other. It is possible to firmly fix the magnetization direction of the layer.

According to a second aspect of the present invention, there is provided a method of manufacturing a spin-valve thin-film magnetic element, comprising the steps of: forming a second lift-off resist on the antiferromagnetic layer; The pair of conductive layers are stacked on the antiferromagnetic layer not covered with the second lift-off resist, and the second lift-off resist is removed. Here, it is preferable that the second lift-off resist is formed so as to overlap with the stacked body.

In the above-described manufacturing method, the second lift-off resist is removed after the conductive layer is laminated, so that the conductive layer can be laminated only on the portion where the second lift-off resist is not formed. In particular, if the second lift-off resist is formed at a position overlapping the laminate, the conductive layer can be formed so as to be located on both sides of the laminate.

Further, a method of manufacturing a spin-valve thin-film magnetic element according to the present invention is the above-described method of manufacturing a spin-valve thin-film magnetic element, wherein a third lift-off resist is formed on the antiferromagnetic layer. Removing the antiferromagnetic layer not covered by the third liftoff resist, laminating the pair of conductive layers on both sides of the remaining antiferromagnetic layer, and removing the third liftoff resist. And Here, the third lift-off resist is preferably formed so as to overlap the laminate.

In the above-mentioned manufacturing method, the bias layer is exposed by removing a part of the antiferromagnetic layer using the third lift-off resist, and the conductive layer is laminated thereon. Adjacent to both sides of the substrate, and can be stacked on the bias layer.
It can be applied to the nonmagnetic conductive layer without the intervention of an antiferromagnetic layer having a large specific resistance, and the amount of change in magnetic resistance due to an external magnetic field becomes large, so that a spin-valve thin-film magnetic element with high detection sensitivity can be manufactured. .

[0039]

Embodiments of the present invention will be described below in detail with reference to the drawings. (First Embodiment) FIGS. 1 and 2 show sectional views of a spin-valve thin-film magnetic element according to a first embodiment of the present invention, and FIGS. 3 and 4 show a spin-valve thin-film magnetic element of the present invention. 2 shows a thin-film magnetic head provided with the above.

The thin-film magnetic head 150 shown in FIG. 3 mainly includes a slider 151, and a GMR head h1 and an inductive head h2 provided on an end surface 151d of the slider 151. Reference numeral 155 denotes the slider 1
Reference numeral 51 denotes a leading side which is an upstream side in the moving direction of the magnetic recording medium, and reference numeral 156 denotes a trailing side.
A rail 1 is provided on the medium facing surface 152 of the slider 151.
51a, 151a, and 151b are formed, and the air grooves 151c and 151c are formed between the rails.

As shown in FIG. 4, the GMR head h1 is
A lower shield layer 163 made of a magnetic alloy formed on an end face 151 d of the slider 151;
3 and the medium facing surface 1
52, the spin-valve thin-film magnetic element 1 according to the present invention, which is exposed from the base layer 52, an upper gap layer 166 covering the spin-valve thin-film magnetic element 1 and the lower gap layer 164, and an upper shield layer 167 covering the upper gap layer 166. ing. The upper shield layer 167 is also used as the lower core layer of the inductive head h2.

The inductive head h2 includes a lower core layer (upper shield layer) 167, a gap layer 174 laminated on the lower core layer 167, a coil 176, and a coil 1
And an upper core layer 178 joined to the gap layer 174 and joined to the lower core layer 167 on the coil 176 side. The coil 176 is patterned so as to be spiral in a plane. Further, a base end portion 178b of the upper core layer 178 is magnetically connected to the lower core layer 167 at a substantially central portion of the coil 176. Also, the upper core layer 178 includes
A protective layer 179 made of alumina or the like is laminated.

The spin-valve thin-film magnetic element 1 of the present invention
Is a so-called top-type single spin-valve thin-film magnetic element in which a free magnetic layer, a nonmagnetic conductive layer, a fixed magnetic layer, and an antiferromagnetic layer are laminated one by one. In the spin-valve thin-film magnetic element 1 shown in FIG. 1, reference numeral 11 denotes an underlayer made of Ta (tantalum) or the like provided on the substrate 7. The free magnetic layer 1 is formed on the underlayer 11.
2 and a nonmagnetic conductive layer 13 made of Cu or the like is stacked on the free magnetic layer 12.
The fixed magnetic layer 14 is laminated on the layer 3. In this way, the laminated body 10 is configured by sequentially laminating the underlayer 11 to the fixed magnetic layer 14. The laminated body 10 has a substantially trapezoidal shape in cross section, and two inclined side surfaces 10a and 10a are formed on both sides of the laminated body 10 in the X1 direction (track width direction). The inclined side surfaces 10a, 10a are inclined so as to approach each other in a direction away from the substrate 7, that is, in the Z direction in the drawing. 1 and 2, the Z direction in the drawing indicates the moving direction of the magnetic recording medium, and the Y direction in the drawing indicates the direction of the leakage magnetic field from the magnetic recording medium.

On both sides of the laminated body 10 in the X1 direction in the drawing, a pair of bias layers 16,
16 are adjacent. The bias layers 16, 16 are provided on the substrate 7 via the bias underlayers 15, 15 and are located at the same level as the stacked body 10, and their upper surfaces 16 b, 16 b are substantially flush with the upper surface 10 b of the stacked body 10. And a part thereof rides on the inclined side surfaces 10a, 10a of the laminate 10. An antiferromagnetic layer 18 is stacked on the stack 10 and the bias layers 16 and 16. The antiferromagnetic layer 18 is stacked in contact with the fixed magnetic layer 14.

Here, “the bias layers 16 and 16 are located on the same level as the laminated body 10” means that the bias layer 1
6, 16 and the stacked body 10 are stacked at substantially the same level in the Z direction with respect to the substrate 7;
Further, a case where the thickness of the bias layers 16 is smaller than the thickness of the stacked body 10 is also included.

In FIG. 1, the bias layers 16, 1
Although the upper surfaces 16b, 16b of 6 appear to be located closer to the substrate 7 than the upper surface 10b of the laminate 10, this illustrates the intermediate layers 17, 17 stacked on the bias layers 16, 16. Therefore, the actual thickness of the intermediate layers 17 and 17 is about 1/5 of the thickness of the bias layers 16 and 16 and is extremely thin.
6b, 16b and the upper surface 10b of the multilayer body 10 are located at substantially the same distance from the substrate 7,
0b, 16b, and 16b form substantially the same plane.
Therefore, the antiferromagnetic layer 18 is laminated on the substantially same plane via the intermediate layers 17 and 17. Therefore, the bias layers 16 and 16 shown in FIG.
Although it rides on the 0 inclined side surfaces 10a and 10a,
Unlike a conventional spin-valve thin-film magnetic element, it does not have a shape protruding in the Z direction in the figure.

Therefore, as shown in FIG. 2, the magnetic flux (arrow E) from one bias layer 16 (right bias layer in the figure) passes through the free magnetic layer 12 and the other bias layer 16 (left side in the figure). (Arrow F), the magnetization directions of the free magnetic layer 12 are aligned in the X1 direction (arrow G) by the bias magnetic fields of the bias layers 16, 16, and the free magnetic layer 12 is made into a single magnetic domain. You. Since the portions riding on the inclined side surfaces 10a, 10a of the bias layers 16, 16 do not protrude from the other portions, the demagnetizing field of the bias layers 16, 16 is not applied to the free magnetic layer 12, and the free magnetic layer 12 is free. The layer 12 is not multi-domain.

The antiferromagnetic layer 18 is preferably made of a PtMn alloy. PtMn alloys include NiMn alloys and FeMn alloys conventionally used as antiferromagnetic layers.
It has better corrosion resistance, higher blocking temperature and larger exchange coupling magnetic field than alloys and the like. Further, instead of the PtMn alloy, X-Mn (where X is Pd, Ru, I
One element selected from r, Rh, and Os is shown. ) Or X′-Pt-Mn
(Where X ′ is Pd, Ru, Ir, Rh, Os, A
One or two or more elements selected from u and Ag. ) May be formed of an alloy represented by the formula:

Further, the PtMn alloy and the XM
In the alloy represented by the formula of n, Pt or X is 37
It is desirably in the range of ~ 63 atomic%. More preferably, it is in the range of 47 to 57 atomic%. Furthermore,
In the alloy represented by the formula of X'-Pt-Mn, X '+
Pt is desirably in the range of 37 to 63 atomic%.
More preferably, it is in the range of 47 to 57 atomic%. Further, in the alloy represented by the formula of X'-Pt-Mn, X 'is preferably in the range of 0.2 to 10 atomic%. As the antiferromagnetic layer 18, an alloy having the above-described appropriate composition range is used, and the alloy is annealed, whereby the antiferromagnetic layer 18 that generates a large exchange coupling magnetic field can be obtained. Particularly, in the case of a PtMn alloy, 800 (O
An excellent antiferromagnetic layer 18 having an exchange coupling magnetic field exceeding e) and having an extremely high blocking temperature of 380 ° C. at which the exchange coupling magnetic field is lost can be obtained.

Since the antiferromagnetic layer 18 is stacked in contact with the fixed magnetic layer 14, an exchange coupling magnetic field (exchange anisotropic magnetic field) appears at the interface between the antiferromagnetic layer 18 and the fixed magnetic layer 14. The magnetization direction of the fixed magnetic layer 14 is fixed in the illustrated Y direction. Therefore, the magnetization direction of the free magnetic layer 12 and the magnetization direction of the pinned magnetic layer 14 have an intersecting relationship.

The pinned magnetic layer 14 is formed of a ferromagnetic thin film, for example, Co, NiFe alloy, CoNiFe alloy,
It is preferably formed of a CoFe alloy, a CoNi alloy, or the like. The nonmagnetic conductive layer 13 is made of Cu, Cr, A
It is preferable to be made of a non-magnetic material represented by u, Ag and the like. The free magnetic layer 12 is preferably formed of the same material as the pinned magnetic layer 14. Although the free magnetic layer 12 is a single layer in FIG.
It may have a multilayer structure in which Fe alloy films are stacked. In the giant magnetoresistance effect generating mechanism having a structure in which the nonmagnetic conductive layer 13 is sandwiched between the fixed magnetic layer 14 and the free magnetic layer 12, it is preferable that the fixed magnetic layer 14 and the free magnetic layer 12 be made of the same material. As compared with the case of using different kinds of materials, it is less likely that a factor other than the spin-dependent scattering of conduction electrons occurs, and it is possible to obtain a higher magnetoresistance effect. The bias layers 16 are preferably made of a Co-Pt alloy, a Co-Cr-Pt alloy, or the like.

A protective layer 19 made of, for example, Ta or the like is laminated on the antiferromagnetic layer 18.
A pair of conductive layers 20, 20 made of a, Au, Cu, or the like are stacked. It is preferable that the conductive layers 20 and 20 are arranged at positions that do not overlap with the stacked body 10 and are stacked while being separated from each other. When the pair of conductive layers 20 and 20 are stacked so as to be positioned on both sides of the stacked body 10 as described above, it is possible to reliably apply the detection current to the nonmagnetic conductive layer 13 of the stacked body 10.

Further, between the bias layers 16 and 16 and the substrate 7 and between the bias layers 16 and 16 and the stacked body 10, bias underlayers 15 and 15 made of, for example, Cr, which is a nonmagnetic metal, are provided. Is provided. Body-centered cubic structure (bcc
By providing the bias underlayers 15 and 15 made of Cr as the structure), the bias layers 16 and 16 are epitaxially grown on the bias underlayers 15 and 15 and the easy axes of the bias layers 16 and 16 are aligned in a predetermined direction. As a result, the coercive force and the squareness of the bias layers 16 are increased, and the bias magnetic field for making the free magnetic layer 12 a single magnetic domain can be increased.

Further, between the bias layers 16 and 16 and the antiferromagnetic layer 18, intermediate layers 17 and 17 made of, for example, a nonmagnetic metal such as Ta or Cr are provided. By providing the intermediate layers 17, 17, the bias layers 16, 1
There is no magnetic coupling between the free magnetic layer 6 and the antiferromagnetic layer 18, and the bias magnetic field for making the free magnetic layer 12 a single magnetic domain can be increased.

In this spin-valve thin-film magnetic element 1,
When the magnetization direction of the free magnetic layer 12 fluctuates due to a leakage magnetic field from a recording medium such as a hard disk, the electric resistance changes in relation to the magnetization of the fixed magnetic layer 14 fixed in the Y direction in the drawing, and this electric resistance value changes. , A leakage magnetic field from the recording medium is detected.

Next, a method of manufacturing the spin-valve thin-film magnetic element 1 will be described with reference to FIGS. First, as shown in FIG.
To form This laminated precursor 10c is formed by sequentially laminating an underlayer, a free magnetic layer, a nonmagnetic conductive layer, and a fixed magnetic layer. Next, as shown in FIG.
A first lift-off resist 80 is formed on c. The first lift-off resist 80 is a PEB (Post Expose Bake)
It is preferably formed by a method such as a method. Next, FIG.
As shown in FIG. 8, portions not covered by the first lift-off resist 80 are removed by ion milling (physical ion beam etching) to expose the substrate 7,
The laminated body 10 having a substantially trapezoidal shape in cross section including the inclined side surfaces 10a, 10a is formed.

Next, as shown in FIG. 19, the bias underlayers 15, 15, the bias layers 16, 16 and the intermediate layer 17,
17, the substrate 7 exposed in the previous step and the inclined side surface 10
a, 10a and the first lift-off resist 80 are sequentially laminated. Here, around the first lift-off resist 80, the bias underlayer 15, the bias layer 16, and the intermediate layer 1
The adhesion layer 80a of the constituent material of each layer of No. 7 adheres. The bias layers 16, 16 are partially inclined side surfaces 10a, 10a.
And the upper surfaces 16b, 16b are preferably formed so as to be substantially at the same position as the upper surface 10b of the multilayer body 10. Further, each of these layers 15, 16, 17
Are preferably laminated by a sputtering method.

Next, the whole is immersed in an etchant capable of removing the first lift-off resist 80, and the etchant penetrates into a boundary portion where the first lift-off resist 80 and the stacked body 10 are joined to each other to form the first lift-off resist 80. Lift-off resist 80
Then, the first lift-off resist 80 is removed as shown in FIG. When the first lift-off resist 80 is formed, if the groove 80b is formed in the bottom peripheral edge, the etchant can enter the groove 80b and the first lift-off resist 80 can be reliably removed. Next, as shown in FIG. 21, an antiferromagnetic layer 18 and a protective layer 19 are added to the laminate 10 and the intermediate layers 17 and 17.
Are sequentially laminated. Before laminating the antiferromagnetic layer 18,
It is necessary to etch the upper surface 10b of the laminate 10 by means such as sputtering. This is because the substrate 7 and the like are temporarily exposed to an atmospheric pressure atmosphere in order to perform the above-described first lift-off resist 80 removing process by an etching process outside a sputtering apparatus or the like. Contaminants the upper surface 10b of the stacked body 10 (the fixed magnetic layer 14). Even if the antiferromagnetic layer 18 is laminated on the upper surface of the contaminated fixed magnetic layer 14, an exchange coupling magnetic field cannot be generated at the interface between these layers. Laminate 10 (pinned magnetic layer 14)
This is because it is necessary to remove the impurities by etching the upper surface 10b.

Next, as shown in FIG. 22, a second lift-off resist 81 is formed on the protective layer 19, and then a conductive layer 20 is laminated on the protective layer 19 and the second lift-off resist 81. Here, an adhesion layer 81 a of the constituent material of the conductive layer 20 adheres around the second lift-off resist 81.
The second lift-off resist 81 is preferably formed at a position overlapping with the stacked body 10 in that the conductive layers 20 can be positioned on both sides of the stacked body 10. Then, as shown in FIG. 23, the second lift-off resist 81 is removed,
The spin-valve thin-film magnetic element 1 shown in FIG. 1 is obtained.

In the spin-valve thin-film magnetic element 1 described above, the bias layers 16 and 16 are provided on the substrate 7 and are located at the same level as the laminate 10, and the upper surfaces 16 b and 1
6b and the upper surface 10b of the laminate 10 constitute substantially the same surface,
Further, since the antiferromagnetic layer 18 is stacked on the bias layers 16 and 16 and the multilayer body 10, the bias layer 16 and the
Part 16 does not protrude in the Z direction in the drawing, the demagnetizing field of the bias layers 16 and 16 does not cause the free magnetic layer 12 to have multiple magnetic domains, and the generation of Barkhausen noise is suppressed. The sensitivity of the magnetic element 1 can be increased.

The antiferromagnetic layer 18 is made of a PtMn alloy or X-Mn (where X is Pd, Ru, Ir, R
h represents one element selected from Os. ) Or X'-Pt-Mn (however,
X ′ represents one or more elements selected from Pd, Ru, Ir, Rh, Os, Au, and Ag. ), The antiferromagnetic layer 18 that generates a large exchange coupling magnetic field can be obtained. In particular, a PtMn alloy has an exchange coupling magnetic field exceeding 800 (Oe). And an excellent antiferromagnetic layer 18 having a very high blocking temperature of 380 ° C. at which the exchange coupling magnetic field is lost.
Can be obtained.

In the above-described method of manufacturing the spin-valve thin-film magnetic element, the bias layers 16 are formed so that their upper surfaces 16b are substantially at the same position as the upper surface 10b of the multilayer body 10. Bias layers 16, 1
6 does not protrude and the bias layers 16 and 16
Thus, the spin-valve thin-film magnetic element 1 in which the free magnetic layer 12 is made into a single magnetic domain can be manufactured without applying a demagnetizing field to the free magnetic layer 12.

Further, a second lift-off resist 81 is formed at a position that does not overlap with the stacked body 10,
After laminating 20, the second lift-off resist 81 is removed, so that the conductive layers 20, 20 can be formed so as to be located on both sides of the laminated body 10.

(Second Embodiment) FIG. 5 is a sectional view showing a spin-valve thin film magnetic element according to a second embodiment of the present invention. In FIG. 5, the same components as those shown in FIG. 1 and FIG.
The components will be described briefly.

The spin-valve thin-film magnetic element 2 shown in FIG.
The underlayer 11, the free magnetic layer 12, and the nonmagnetic conductive layer 1
3, a laminated body 60 is formed by sequentially laminating the pinned layer 3, the pinned magnetic layer 14, and the antiferromagnetic thin film 18a. The laminate 60 has a substantially trapezoidal shape in cross section, and two inclined sides 60a, 60a on both sides in the X1 direction of the laminate 60 in the drawing.
Reference numerals 0a and 60a are inclined so as to approach each other in a direction away from the substrate 7, that is, in the illustrated Z direction. In addition,
In FIG. 5, the Z direction in the drawing indicates the moving direction of the magnetic recording medium, and the Y direction in the drawing indicates the direction of the leakage magnetic field from the magnetic recording medium.

On both sides of the stacked body 60 in the X1 direction in the drawing, a pair of bias layers 16,
16 are adjacent. The bias layers 16, 16 are provided on the substrate 7 via the bias underlayers 15, 15, and are located at the same level as the stacked body 60, and their upper surfaces 16 b, 16 b are substantially flush with the upper surface 60 b of the stacked body 60. And a part thereof rides on the inclined side surfaces 60a, 60a of the laminate 60. The antiferromagnetic layer 18 is stacked on the stacked body 60 and the bias layers 16 and 16. The antiferromagnetic layer 18 is stacked in contact with the antiferromagnetic thin film 18a.
The antiferromagnetic thin film 18a and the antiferromagnetic layer 18 are preferably made of an alloy having the same composition.

Although a part of the bias layers 16 and 16 shown in FIG. 5 ride on the inclined side surface 60a of the laminated body 60, they project in the Z direction as in the conventional spin-valve thin film magnetic element. The shape does not change. The antiferromagnetic layer 18 has a protective layer 19 made of, for example, Ta.
Are stacked, and a pair of conductive layers 20 and 20 are stacked thereon.

Since the antiferromagnetic layer 18 is stacked in contact with the antiferromagnetic thin film 18a, the antiferromagnetic layer 18 and the antiferromagnetic thin film 18a are integrated, and the antiferromagnetic layer 18 and the antiferromagnetic thin film 18a are integrated. 18a is simultaneously annealed, an exchange coupling magnetic field is generated at the interface between the antiferromagnetic thin film 18a and the fixed magnetic layer 14, and the magnetization direction of the fixed magnetic layer 14 is fixed in the Y direction in the figure.

As described above, the antiferromagnetic thin film 18a is preferably made of an alloy having the same composition as the antiferromagnetic layer 18, and is preferably made of a PtMn alloy. P
The tMn alloy has excellent corrosion resistance, a high blocking temperature, and a large exchange coupling magnetic field as compared with a NiMn alloy, a FeMn alloy, or the like which has been conventionally used as an antiferromagnetic layer. Further, instead of the PtMn alloy, an alloy represented by the formula of X—Mn (where X represents one element selected from Pd, Ru, Ir, Rh, and Os) or X′- Pt-Mn (where X 'is Pd, Ru,
1 selected from Ir, Rh, Os, Au, and Ag
Indicates a species or two or more elements. ) May be formed of an alloy represented by the formula:

Further, the PtMn alloy and the XM
In the alloy represented by the formula of n, Pt or X is 37
It is desirably in the range of ~ 63 atomic%. More preferably, it is in the range of 47 to 57 atomic%. Furthermore,
In the alloy represented by the formula of X'-Pt-Mn, X '+
Pt is desirably in the range of 37 to 63 atomic%.
More preferably, it is in the range of 47 to 57 atomic%. Further, in the alloy represented by the formula of X'-Pt-Mn, X 'is preferably in the range of 0.2 to 10 atomic%. As the antiferromagnetic thin film 18a, an alloy having the above-described proper composition range is used, and an alloy having the same composition as the antiferromagnetic thin film 18a is used for the antiferromagnetic layer 18, and these are annealed to obtain a large alloy. An exchange coupling magnetic field can be developed. Particularly, in the case of a PtMn alloy, 800 (O
An exchange coupling magnetic field exceeding e) is developed, and the blocking temperature at which the exchange coupling magnetic field is lost is extremely high at 380 ° C., so that the thermal stability of the spin-valve thin-film magnetic element 2 can be enhanced.

The method of manufacturing the spin-valve thin-film magnetic element 2 described above uses the spin-valve thin-film magnetic element 1 described above.
The manufacturing method is almost the same as that of the spin valve type described above, except that an antiferromagnetic thin film is also laminated in addition to the underlayer, the free magnetic layer, the nonmagnetic conductive layer, and the fixed magnetic layer to form a laminated precursor. This is different from the case of the thin-film magnetic element 1. The subsequent manufacturing steps are almost the same as those shown in FIGS. 17 to 23, and the first
A lift-off resist is formed, and a portion not covered with the first lift-off resist is removed by an ion milling method to expose the substrate, thereby forming a laminate. Next, a bias underlayer, a bias layer, and an intermediate layer are sequentially laminated on the exposed substrate, the inclined side surface, and the first lift-off resist, and the first
The lift-off resist is removed.

Next, an antiferromagnetic layer and a protective layer are laminated on the laminate and the intermediate layer. Before stacking the antiferromagnetic layer,
It is necessary to etch the upper surface of the laminate by means such as ion milling or reverse sputtering. This is the first
In order to perform the step of removing the lift-off resist outside the sputtering apparatus or the like, the substrate or the like is temporarily exposed to an atmospheric pressure atmosphere. At this time, the upper surface of the laminated body (antiferromagnetic thin film) is exposed to impurities such as oxygen in the atmosphere. Is contaminated, so even if an antiferromagnetic layer is stacked on this contaminated antiferromagnetic thin film,
Since the antiferromagnetic thin film and the antiferromagnetic layer cannot be integrated and a sufficient exchange coupling magnetic field sufficient to fix the magnetization direction of the fixed magnetic layer cannot be obtained,
This is because it is necessary to remove impurities by etching the upper surface of the stacked body (antiferromagnetic thin film).

Next, a second lift-off resist is formed on the protective layer, a conductive layer is laminated, and finally, the second lift-off resist is removed to obtain the spin-valve thin-film magnetic element 2 shown in FIG. .

The above-described spin-valve thin-film magnetic element 2 has the following effects in addition to the same effects as those of the above-described spin-valve thin-film magnetic element 1. That is, in the spin-valve thin-film magnetic element 2, the fixed magnetic layer 14 and the antiferromagnetic thin film 18a are simultaneously laminated, so that no impurities or the like enter the interface between the fixed magnetic layer 14 and the antiferromagnetic thin film 18a. When the antiferromagnetic thin film 18a and the antiferromagnetic layer 18 are integrated, a large exchange coupling magnetic field is easily generated at the interface between the fixed magnetic layer 14 and the antiferromagnetic thin film 18a, and the fixed magnetic layer 14 Can be firmly fixed in the illustrated Y direction.

In the above-described manufacturing method, since the pinned magnetic layer 14 and the antiferromagnetic thin film 18a are formed at the same time, impurities such as oxygen do not enter the interface between them, and the antiferromagnetic thin film 18a By laminating the antiferromagnetic layers 18 and integrating them, the antiferromagnetic thin film 18a is substantially included in the antiferromagnetic layer 18 and the pinned magnetic layer 14
An exchange coupling magnetic field is easily developed at the interface between the magnetic layer and the antiferromagnetic thin film 18a, and the spin-valve thin-film magnetic element 2 in which the magnetization direction of the fixed magnetic layer 14 is firmly fixed can be manufactured.

(Third Embodiment) FIG. 6 is a sectional view of a spin-valve thin film magnetic element according to a third embodiment of the present invention. In FIG. 6, the same components as those shown in FIGS. 1 and 2 are denoted by the same reference numerals, and the components will be described briefly.

The spin-valve thin-film magnetic element 3 shown in FIG.
The underlayer 11, the free magnetic layer 12, and the nonmagnetic conductive layer 1
3 in which a magnetic layer 3 and a pinned magnetic layer 14 are sequentially laminated
Is provided. A pair of bias layers 16, 16 are adjacent to each other on both sides in the X1 direction of the laminate 10 via the bias underlayers 15, 15. Bias layers 16, 16
Are provided on the substrate 7 via the bias underlayers 15 and 15, are located on the same level as the laminate 10,
b, 16b constitute substantially the same plane as the upper surface 10b of the laminated body 10, and a part thereof is inclined side surfaces 10a, 10a,
a. Therefore, the bias layer 1 shown in FIG.
6, 16 are partially inclined side surfaces 10a of the laminate 10;
Although it rides on 10a, it does not have a shape protruding in the Z direction in the drawing as in the conventional spin-valve thin-film magnetic element.

The bias layers 16, 16 have intermediate layers 17, 1
7 are laminated, and the intermediate layers 17 and 17 and the upper surface 1 of the laminate 10 are stacked.
A ferromagnetic thin film 14a is laminated on 0b. An antiferromagnetic layer 18 and a protective layer 19 are laminated on the ferromagnetic thin film 14a. Further, on the protective layer 19, a pair of conductive layers 20, 2
0 are stacked.

Since the antiferromagnetic layer 18 is stacked in contact with the ferromagnetic thin film 14a, an exchange coupling magnetic field is generated at the interface between the ferromagnetic thin film 14a and the antiferromagnetic layer 18. Since the ferromagnetic thin film 14a is laminated on the fixed magnetic layer 14,
The exchange coupling magnetic field generated at the interface between the ferromagnetic thin film 14a and the antiferromagnetic layer 18 is applied to the fixed magnetic layer 14, and the magnetization direction of the fixed magnetic layer 14 is fixed in the Y direction in the drawing. The ferromagnetic thin film 14a is preferably made of the same material as the pinned magnetic layer 14, and is preferably made of, for example, a ferromagnetic material such as Co, NiFe alloy, CoNiFe alloy, CoFe alloy, or CoNi alloy.

The method for manufacturing the spin-valve thin-film magnetic element 3 described above uses the spin-valve thin-film magnetic element 1 described above.
Is similar to that of the spin-valve thin-film magnetic element 1 described above, except that a ferromagnetic thin film is stacked on the stacked body and the bias layer, and then an antiferromagnetic layer is stacked.

The other points are almost the same as those in the manufacturing method shown in FIGS. 16 to 23, in which a laminated precursor is formed on a substrate,
Forming a first lift-off resist on the layered precursor;
A portion which is not covered with the lift-off resist is removed by an ion milling method to expose the substrate and form a laminate. Next, a bias underlayer, a bias layer, and an intermediate layer are sequentially laminated on the exposed substrate, the inclined side surfaces, and the first lift-off resist, and the first lift-off resist is removed.

Next, a ferromagnetic thin film, an antiferromagnetic layer, and a protective layer are laminated on the laminate and the intermediate layer. Before laminating the ferromagnetic thin films, it is necessary to etch the upper surface of the laminate by means such as sputtering. This is because the substrate or the like is temporarily exposed to the atmospheric pressure atmosphere in order to perform the first step of removing the first lift-off resist outside the sputtering apparatus or the like, and at this time, the stacked body ( Since the upper surface of the fixed magnetic layer is contaminated, impurities are removed by etching the upper surface of the stacked body (fixed magnetic layer), and the fixed magnetic layer and the ferromagnetic thin film are substantially integrated, and the fixed magnetic layer is fixed. This is because it becomes possible to firmly fix the magnetization direction of.

Next, a second lift-off resist is formed on the protective layer, a conductive layer is laminated, and finally the second lift-off resist is removed, thereby obtaining the spin-valve thin-film magnetic element 3 shown in FIG. .

The above-described spin-valve thin-film magnetic element 3 has the following effects in addition to the same effects as those of the above-described spin-valve thin-film magnetic element 1. That is, in the above-described spin-valve thin-film magnetic element 3, the ferromagnetic thin film 1
Since the ferromagnetic layer 4a and the antiferromagnetic layer 18 are simultaneously laminated, no impurities or the like enter the interface between the ferromagnetic thin film 14a and the antiferromagnetic layer 18, and the ferromagnetic thin film 14a The antiferromagnetic layer 18 and the ferromagnetic thin film 1
Exchange magnetic field developed at the interface with the fixed magnetic layer 1
4 to fix the magnetization direction of the fixed magnetic layer 14 in the Y direction in the figure.

In the above-described manufacturing method, since the ferromagnetic thin film 14a and the antiferromagnetic layer 18 are simultaneously laminated, impurities such as oxygen do not enter the interface between them, and the ferromagnetic thin film 14a and the antiferromagnetic layer 18 An exchange coupling magnetic field is easily developed at the interface with the magnetic layer 18, and the ferromagnetic thin film 14a is laminated on the fixed magnetic layer 14 so that they are integrated to form the ferromagnetic thin film 14a substantially. Therefore, the spin-valve thin-film magnetic element 3 in which the magnetization direction of the fixed magnetic layer 14 is firmly fixed can be manufactured.

(Fourth Embodiment) FIG. 7 is a sectional view showing a spin-valve thin film magnetic element according to a fourth embodiment of the present invention. In FIG. 7, the same components as those shown in FIG. 1 are denoted by the same reference numerals, and the components will be described in brief.

The spin-valve thin-film magnetic element 4 shown in FIG.
The underlayer 11, the free magnetic layer 12, and the nonmagnetic conductive layer 1
3 in which layer 3 and pinned magnetic layer 24 are sequentially laminated
Is provided.

The fixed magnetic layer 24 includes the non-magnetic intermediate layer 22 and
The first fixed magnetic layer 21 and the second fixed magnetic layer 23 sandwich the nonmagnetic intermediate layer 22. The first and second pinned magnetic layers 21 and 23 preferably have slightly different thicknesses. In FIG. 7, the thickness of the first pinned magnetic layer 21 is smaller than that of the second pinned magnetic layer 23. It is said to be large. The antiferromagnetic layer 18 is stacked so as to cover the stacked body 30 and the intermediate layers 17 and 17 in contact with the second pinned magnetic layer 23.

The magnetization direction of the second pinned magnetic layer 23 of the pinned magnetic layer 24 is fixed in the illustrated Y direction by the exchange coupling magnetic field with the antiferromagnetic layer 18, and the first pinned magnetic layer 21 is 23 and the magnetization direction is Y
It is fixed in the opposite direction. Since the magnetization directions of the first and second pinned magnetic layers 21 and 23 are antiparallel to each other, the magnetic moments of the first and second fixed magnetic layers 21 and 23 cancel each other. Fixed magnetic layer 2
Since the thickness of the fixed magnetic layer 1 is slightly larger, the spontaneous magnetization of the fixed magnetic layer 24 itself slightly remains. This spontaneous magnetization is further amplified by the exchange coupling magnetic field with the antiferromagnetic layer 18, and The magnetization direction is fixed in the direction opposite to the illustrated Y direction.

First fixed magnetic layer 21 and second fixed magnetic layer 2
3 is preferably formed of, for example, Co, a NiFe alloy, a CoFe alloy, a CoNiFe alloy, a CoNi alloy, or the like. The nonmagnetic intermediate layer 22 sandwiched between the first pinned magnetic layer 21 and the second pinned magnetic layer 23
It is preferable to be formed of one or more alloys of Ru, Rh, Ir, Cr, Re, and Cu.

On both sides of the laminate 30 in the X1 direction in the drawing, a pair of bias layers 16,
16 are adjacent. The bias layers 16, 16 are located at the same level as the stacked body 30, and the upper surfaces 16 b, 16 b constitute substantially the same surface as the upper surface 30 b of the stacked body 30, and a part thereof has inclined side surfaces 30 a, I am on 30a. Therefore, although a part of the bias layers 16 and 16 shown in FIG. 7 ride on the inclined side surface 30a of the stacked body 30, like the conventional spin-valve thin-film magnetic element,
The shape does not protrude toward the illustrated Z direction. A protective layer 19 is laminated on the antiferromagnetic layer 18, and a pair of conductive layers 20, 20 are laminated on the protective layer 19.

The above-described spin-valve thin-film magnetic element 4 comprises:
The spin valve described above, except that a laminated precursor is formed by laminating an underlayer, a free magnetic layer, a nonmagnetic conductive layer, a first pinned magnetic layer, a nonmagnetic intermediate layer, and a second pinned magnetic layer on a substrate. It is manufactured in the same manner as the thin-film magnetic element 1.

In the above-described spin-valve thin-film magnetic element 4, the following effects can be obtained in addition to the same effects as those of the above-described spin-valve thin-film magnetic element 1. That is, in the above-described spin-valve thin-film magnetic element 4, the fixed magnetic layer 2
Numeral 4 comprises a nonmagnetic intermediate layer 22, a first fixed magnetic layer 21, and a second fixed magnetic layer 23. The magnetization direction of the second fixed magnetic layer 23 is fixed in the Y direction in the drawing, and the magnetization direction of the first fixed magnetic layer 21. Are fixed in the direction opposite to the Y direction in the figure, so that the magnetic moments of the first and second fixed magnetic layers 21 and 23 cancel each other, but the thickness of the first fixed magnetic layer 21 is slightly reduced. As a result, the spontaneous magnetization of the pinned magnetic layer 24 itself slightly remains, and this spontaneous magnetization is further amplified by the exchange coupling magnetic field with the antiferromagnetic layer 18, and
Magnetization direction is firmly fixed in the direction opposite to the illustrated Y direction,
The stability of the spin-valve thin-film magnetic element 4 can be improved.

(Fifth Embodiment) FIG. 8 is a sectional view showing a spin-valve thin film magnetic element according to a fifth embodiment of the present invention. In FIG. 8, the same components as those shown in FIGS. 1 and 7 are given the same reference numerals.
The components will be described briefly.

The spin-valve thin-film magnetic element 5 shown in FIG.
The underlayer 11, the free magnetic layer 12, and the nonmagnetic conductive layer 1
3 is provided with a laminated body 61 in which the pinned layer 3, the pinned magnetic layer 24, and the antiferromagnetic thin film 18a are sequentially laminated.

The fixed magnetic layer 24 includes the non-magnetic intermediate layer 22 and
The first fixed magnetic layer 21 and the second fixed magnetic layer 23 sandwich the nonmagnetic intermediate layer 22. The first and second pinned magnetic layers 21 and 23 preferably have slightly different thicknesses. In FIG. 8, the thickness of the first fixed magnetic layer 21 is smaller than that of the second fixed magnetic layer 23. It is said to be large. The antiferromagnetic layer 18 is stacked so as to cover the stacked body 61 and the intermediate layers 17 and 17 in contact with the antiferromagnetic thin film 18a.

Since the antiferromagnetic layer 18 is stacked in contact with the antiferromagnetic thin film 18a, the antiferromagnetic layer 18 and the antiferromagnetic thin film 18a are integrated, and the antiferromagnetic layer 18 and the antiferromagnetic thin film 18a are integrated. 18a are simultaneously annealed to generate an exchange coupling magnetic field at the interface between the antiferromagnetic thin film 18a and the second pinned magnetic layer 23, and the magnetization direction of the second pinned magnetic layer 23 is
Fixed in the direction. Further, the first pinned magnetic layer 21 is
It is antiferromagnetically coupled to the fixed magnetic layer 23 and its magnetization direction is fixed in the direction opposite to the Y direction in the figure. Since the magnetization directions of the first and second pinned magnetic layers 21 and 23 are antiparallel to each other, the magnetic moments of the first and second fixed magnetic layers 21 and 23 cancel each other. Since the thickness of the pinned magnetic layer 21 is slightly large, the spontaneous magnetization of the pinned magnetic layer 24 itself slightly remains, and the spontaneous magnetization is further amplified by the exchange coupling magnetic field with the antiferromagnetic layer 18.
The magnetization direction of the fixed magnetic layer 24 is fixed in a direction opposite to the Y direction in the figure.

On both sides of the laminate 61 in the X1 direction in the drawing, a pair of bias layers 16,
16 are adjacent. The bias layers 16, 16 are located on the same level as the stacked body 61, and the upper surfaces 16 b, 16 b constitute substantially the same surface as the upper surface 61 b of the stacked body 61, and a part thereof has inclined side surfaces 61 a, I am riding on 61a. Therefore, although a part of the bias layers 16 and 16 shown in FIG. 8 ride on the inclined side surface 61a of the multilayer body 61, like the conventional spin-valve thin film magnetic element,
The shape does not protrude toward the illustrated Z direction.

A protective layer 19 is laminated on the antiferromagnetic layer 18, and a pair of conductive layers 20, 20 are laminated on the protective layer 19.

The above-described spin-valve thin-film magnetic element 5
The spin valve described above, except that a laminated precursor is formed by laminating an underlayer, a free magnetic layer, a nonmagnetic conductive layer, a first pinned magnetic layer, a nonmagnetic intermediate layer, and a second pinned magnetic layer on a substrate. It is manufactured in the same manner as the thin-film magnetic element 2.

The above-described spin-valve thin-film magnetic element 5 has the following effects in addition to the same effects as those of the spin-valve thin-film magnetic element 1 described above. That is, in the above-described spin-valve thin-film magnetic element 5, the second fixed magnetic layer 23 and the antiferromagnetic thin film 18a are simultaneously laminated, and an exchange coupling magnetic field is generated at the interface between these layers. The magnetization direction of the layer 23 is firmly fixed in the direction opposite to the Y direction in the figure, and the spontaneous magnetization of the fixed magnetic layer 24 itself is further amplified by the exchange coupling magnetic field with the antiferromagnetic layer 18. The magnetization direction can be firmly fixed in the direction opposite to the illustrated Y direction, and the stability of the spin-valve thin-film magnetic element 5 can be further improved.

(Sixth Embodiment) FIG. 9 is a sectional view showing a spin-valve thin film magnetic element according to a sixth embodiment of the present invention. In FIG. 9, the same components as those shown in FIGS. 1 and 7 are denoted by the same reference numerals.
The components will be described briefly.

The spin-valve thin-film magnetic element 6 shown in FIG.
The underlayer 11, the free magnetic layer 12, and the nonmagnetic conductive layer 1
3 in which layer 3 and pinned magnetic layer 24 are sequentially laminated
Is provided.

The pinned magnetic layer 24 includes the non-magnetic intermediate layer 22 and
The first fixed magnetic layer 21 and the second fixed magnetic layer 23 sandwich the nonmagnetic intermediate layer 22. The first and second pinned magnetic layers 21 and 23 preferably have slightly different thicknesses. In FIG. 9, the thickness of the first pinned magnetic layer 21 is smaller than that of the second pinned magnetic layer 23. It is said to be large.

On both sides of the laminate 30 in the X1 direction in the figure, a pair of bias layers 16,
16 are adjacent. The bias layers 16, 16 are located at the same level as the stacked body 30, and the upper surfaces 16 b, 16 b constitute substantially the same surface as the upper surface 30 b of the stacked body 30, and a part thereof has inclined side surfaces 30 a, I am on 30a. Therefore, although a part of the bias layers 16 and 16 shown in FIG. 9 rides on the inclined side surface 30a of the stacked body 30, like the conventional spin-valve thin film magnetic element,
The shape does not protrude toward the illustrated Z direction.

The bias layers 16, 16 have intermediate layers 17, 1
7 are stacked, and the intermediate layers 17 and 17 and the upper surface 3 of the laminate 30 are stacked.
A ferromagnetic thin film 14a is laminated on 0b. An antiferromagnetic layer 18 and a protective layer 19 are laminated on the ferromagnetic thin film 14a. Further, on the protective layer 19, a pair of conductive layers 20, 2
0 are stacked.

By stacking the antiferromagnetic layer 18 in contact with the ferromagnetic thin film 14a, an exchange coupling magnetic field is generated at the interface between the ferromagnetic thin film 14a and the antiferromagnetic layer 18. Since the ferromagnetic thin film 14a is stacked on the second pinned magnetic layer 23, the exchange coupling magnetic field developed at the interface between the ferromagnetic thin film 14a and the antiferromagnetic layer 18 is applied to the second pinned magnetic layer 23. The magnetization direction is fixed in the illustrated Y direction. The first pinned magnetic layer is antiferromagnetically coupled to the second pinned magnetic layer 23, and its magnetization direction is fixed in the direction opposite to the Y direction in the figure.

Since the magnetization directions of the first and second pinned magnetic layers 21 and 23 are antiparallel to each other, the magnetic moments of the first and second fixed magnetic layers 21 and 23 cancel each other. Since the thickness of the first pinned magnetic layer 21 is slightly large, the spontaneous magnetization of the pinned magnetic layer 24 itself slightly remains, and this spontaneous magnetization is further amplified by the exchange coupling magnetic field with the antiferromagnetic layer 18. The magnetization direction of the fixed magnetic layer 24 is fixed in the direction opposite to the Y direction in the figure.

The ferromagnetic thin film 14a is formed of the second pinned magnetic layer 24.
And the same material, for example, a ferromagnetic material such as Co, a NiFe alloy, a CoNiFe alloy,
It is preferable to be made of an Fe alloy, a CoNi alloy, or the like.

The spin-valve thin-film magnetic element 6 described above
The spin valve described above, except that a laminated precursor is formed by laminating an underlayer, a free magnetic layer, a nonmagnetic conductive layer, a first pinned magnetic layer, a nonmagnetic intermediate layer, and a second pinned magnetic layer on a substrate. It is manufactured in the same manner as the thin-film magnetic element 3.

In the above-described spin-valve thin-film magnetic element 6, the following effects are obtained in addition to the same effects as those of the above-described spin-valve thin-film magnetic element 1. That is, in the above-described spin-valve thin film magnetic element 6, the ferromagnetic thin film 1
4a and the antiferromagnetic layer 18 are in contact with each other without any impurities or the like, and since the ferromagnetic thin film 14a is in contact with the second pinned magnetic layer 23, the antiferromagnetic layer 18 and the ferromagnetic thin film 14a The exchange coupling magnetic field generated between the two layers is applied to the second pinned magnetic layer 14, and the magnetization direction of the second pinned magnetic layer 23 is fixed in the Y direction in the drawing, whereby the magnetization direction of the first fixed magnetic layer 21 is changed in the Y direction in the drawing. And the fixed magnetic layer 2
As a result, the spontaneous magnetization of itself 4 slightly remains, and this spontaneous magnetization is further amplified by the exchange coupling magnetic field with the antiferromagnetic layer 18, so that the magnetization direction of the fixed magnetic layer 24 can be firmly fixed in the direction opposite to the Y direction in the figure. Thus, the stability of the spin-valve thin-film magnetic element 6 can be further improved.

(Seventh Embodiment) FIG. 10 shows a seventh embodiment of the present invention.
1 shows a sectional view of a spin-valve thin-film magnetic element according to an embodiment of the present invention. In FIG. 10, the same components as those shown in FIGS. 1 and 7 are denoted by the same reference numerals, and the components will be described in brief.

The spin-valve thin-film magnetic element 7 shown in FIG. 10 has a laminated body 5 in which an underlayer 11, a free magnetic layer 28, a nonmagnetic conductive layer 13, and a fixed magnetic layer 24 are sequentially laminated.
0 is provided.

On both sides of the laminate 50 in the X1 direction in the drawing, a pair of bias layers 16,
16 are adjacent. The bias layers 16, 16 are located at the same level as the stacked body 50, and the upper surfaces 16 b, 16 b constitute substantially the same plane as the upper surface 50 b of the stacked body 50, and a part thereof is inclined side surfaces 50 a, I am on 50a. Therefore, the bias layers 16 shown in FIG.
Although a part thereof rides on the inclined side surface 50a of the stacked body 50, it does not have a shape protruding in the Z direction in the drawing unlike the conventional spin-valve thin-film magnetic element.

The pinned magnetic layer 24 includes the non-magnetic intermediate layer 22 and
The first fixed magnetic layer 21 and the second fixed magnetic layer 23 sandwich the nonmagnetic intermediate layer 22. The first and second pinned magnetic layers 21 and 23 preferably have slightly different thicknesses. In FIG. 10, the thickness of the first fixed magnetic layer 21 is smaller than that of the second fixed magnetic layer 23. It is said to be large. The antiferromagnetic layer 18 is in contact with the second pinned magnetic
And the intermediate layers 17, 17. Further, a protective layer 19 is laminated on the antiferromagnetic layer 18, and a pair of conductive layers 20, 20 are laminated on the protective layer 19.

The magnetization direction of the second pinned magnetic layer 23 is fixed in the Y direction in the figure by an exchange coupling magnetic field with the antiferromagnetic layer 18, and the first pinned magnetic layer 21 is And the magnetization direction is fixed in the direction opposite to the Y direction in the figure. Since the magnetization directions of the first and second pinned magnetic layers 21 and 23 are antiparallel to each other, the first and second pinned magnetic layers 21 and 23 are
Although the magnetic moments of the pinned magnetic layers 21 and 23 cancel each other, the spontaneous magnetization of the pinned magnetic layer 24 itself slightly remains because the thickness of the first pinned magnetic layer 21 is slightly large. This spontaneous magnetization is further amplified by the exchange coupling magnetic field with the antiferromagnetic layer 18, and the magnetization direction of the fixed magnetic layer 24 is fixed in the direction opposite to the Y direction in the figure.

The free magnetic layer 28 comprises the non-magnetic intermediate layer 26
And a first free magnetic layer 25 and a second free magnetic layer 27 sandwiching a non-magnetic intermediate layer 26. It is preferable that the thicknesses of the first and second free magnetic layers 25 and 27 are slightly different. In FIG. 10, the thickness of the first free magnetic layer 25 is smaller than that of the second free magnetic layer 27. It is said to be large.

The first and second free magnetic layers 25 and 27 are magnetically coupled to each other by an exchange coupling magnetic field to be in a ferrimagnetic state. That is, the magnetization direction of the first free magnetic layer 25 is aligned in the X1 direction by the magnetization of the bias layers 16, and the second free magnetic layer 27 is antiferromagnetically coupled to the first free magnetic layer 25. The magnetization direction is aligned in the direction opposite to the X1 direction in the figure. First and second free magnetic layers 2
Since the magnetization directions of 5 and 27 are antiparallel to each other,
Although the magnetic moments of the first and second free magnetic layers cancel each other, since the thickness of the first free magnetic layer 25 is larger than that of the second free magnetic layer 27, the difference between the thicknesses is different. Becomes the magnetization of the entire free magnetic layer 28, the magnetization direction of the free magnetic layer 28 is aligned with the X1 direction in the figure, and the magnitude of this magnetization is reduced. The magnetization direction changes with high sensitivity.

The first free magnetic layer 25 and the second free magnetic layer 27 are preferably made of, for example, Co, NiFe alloy, CoFe alloy, CoNiFe alloy, CoNi alloy or the like. The nonmagnetic intermediate layer 26 is made of Ru,
It is preferable to use one or more alloys of Rh, Ir, Cr, Re, and Cu.

The above-described spin-valve type thin-film magnetic element 7
A base layer, a first free magnetic layer, a non-magnetic intermediate film, a second free magnetic layer, a non-magnetic conductive layer, a first fixed magnetic layer, another non-magnetic intermediate layer, and a second fixed magnetic layer are laminated on a substrate. The spin-valve thin-film magnetic element 1 is manufactured in the same manner as described above, except that the layered precursor is formed.

The above-described spin-valve thin-film magnetic element 7 has the following effects in addition to the same effects as those of the spin-valve thin-film magnetic element 1 described above. That is, in the above-described spin-valve thin-film magnetic element 7, the fixed magnetic layer 2
Numeral 4 comprises a nonmagnetic intermediate layer 22, a first fixed magnetic layer 21, and a second fixed magnetic layer 23. The magnetization direction of the second fixed magnetic layer 23 is fixed in the Y direction in the drawing, and the magnetization direction of the first fixed magnetic layer 21. Are fixed in the direction opposite to the Y direction in the figure, so that the magnetic moments of the first and second fixed magnetic layers 21 and 23 cancel each other, but the thickness of the first fixed magnetic layer 21 is slightly reduced. As a result, the spontaneous magnetization of the pinned magnetic layer 24 itself slightly remains, and this spontaneous magnetization is further amplified by the exchange coupling magnetic field with the antiferromagnetic layer 18, and
Magnetization direction is firmly fixed in the direction opposite to the illustrated Y direction,
The stability of the spin-valve thin-film magnetic element 7 can be improved.

The first and second free magnetic layers 25 and 27
Are antiferromagnetically coupled to each other to be in a ferrimagnetic state, and the magnetic moments of the first and second free magnetic layers cancel each other out, but the first free magnetic layer 25 and the second free magnetic layer 27 The magnetization corresponding to the difference in thickness becomes the magnetization of the entire free magnetic layer 28, and this magnetization is reduced.
The magnetization direction of the free magnetic layer 28 can be changed with high sensitivity to a change in the external magnetic field, and the sensitivity of the spin-valve thin-film magnetic element 7 can be improved.

(Eighth Embodiment) FIG. 11 shows an eighth embodiment of the present invention.
1 shows a sectional view of a spin-valve thin-film magnetic element according to an embodiment of the present invention. In FIG. 11, the same components as those shown in FIGS. 1 and 8 are denoted by the same reference numerals, and the components will be described briefly.

The spin-valve thin-film magnetic element 8 shown in FIG. 11 has a laminate in which an underlayer 11, a free magnetic layer 28, a nonmagnetic conductive layer 13, a fixed magnetic layer 24, and an antiferromagnetic thin film 18a are sequentially laminated. 62 are provided.

The pinned magnetic layer 24 includes the non-magnetic intermediate layer 22 and
The first fixed magnetic layer 21 and the second fixed magnetic layer 23 sandwich the nonmagnetic intermediate layer 22. The first and second pinned magnetic layers 21 and 23 preferably have slightly different thicknesses. In FIG. 11, the thickness of the first pinned magnetic layer 21 is smaller than that of the second pinned magnetic layer 23. It is said to be large. The free magnetic layer 28 includes a non-magnetic intermediate layer 26, and a first free magnetic layer 25 and a second free magnetic layer 27 sandwiching the non-magnetic intermediate layer 26. It is preferable that the first and second free magnetic layers 25 and 27 have slightly different thicknesses.
, The thickness of the first free magnetic layer 25 is larger than that of the second free magnetic layer 27.

On both sides of the stacked body 62 in the X1 direction in the drawing, a pair of bias layers 16,
16 are adjacent. The bias layers 16, 16 are located on the same level as the stacked body 62, and the upper surfaces 16 b, 16 b constitute substantially the same surface as the upper surface 62 b of the stacked body 62, and a part thereof is inclined side surfaces 62 a, I am riding on 62a. Therefore, the bias layers 16 shown in FIG.
Although a part thereof rides on the inclined side surface 62a of the stacked body 62, it does not have a shape protruding in the Z direction in the drawing as in the conventional spin-valve thin-film magnetic element.

Further, the antiferromagnetic layer 18 is
8a are laminated so as to cover the laminate 62 and the intermediate layers 17 and 17 in contact with 8a. In addition, a protective layer 19 is laminated on the antiferromagnetic layer 18, and a pair of conductive layers 20 are formed on the protective layer 19.
20 are stacked. Since the antiferromagnetic layer 18 is stacked in contact with the antiferromagnetic thin film 18a, the antiferromagnetic layer 18
And the antiferromagnetic thin film 18a are integrated with each other, and the antiferromagnetic layer 18 and the antiferromagnetic thin film 18a are simultaneously annealed, so that an exchange coupling magnetic field is generated at the interface between the antiferromagnetic thin film 18a and the second fixed magnetic layer 23. And the magnetization direction of the second pinned magnetic layer 23 is fixed in the Y direction in the figure. Also, the first fixed magnetic layer 2
1 is antiferromagnetically coupled to the second pinned magnetic layer 23, and its magnetization direction is fixed in the direction opposite to the Y direction in the figure. First,
Since the magnetization directions of the second pinned magnetic layers 21 and 23 are antiparallel to each other, the magnetic moments of the first and second pinned magnetic layers 21 and 23 cancel each other.
Since the thickness of the pinned magnetic layer 21 is slightly large, the spontaneous magnetization of the pinned magnetic layer 24 itself slightly remains, and the spontaneous magnetization is further amplified by the exchange coupling magnetic field with the antiferromagnetic layer 18, The magnetization direction of the layer 24 is fixed in the direction opposite to the illustrated Y direction.

The first and second free magnetic layers 25 and 27 are magnetically coupled to each other by an exchange coupling magnetic field to be in a ferrimagnetic state. That is, the magnetization direction of the first free magnetic layer 25 is aligned in the X1 direction by the magnetization of the bias layers 16, and the second free magnetic layer 27 is antiferromagnetically coupled to the first free magnetic layer 25. The magnetization direction is aligned in the direction opposite to the X1 direction in the figure. First and second free magnetic layers 2
Since the magnetization directions of 5 and 27 are antiparallel to each other,
Although the magnetic moments of the first and second free magnetic layers cancel each other, since the thickness of the first free magnetic layer 25 is larger than that of the second free magnetic layer 27, the difference between the thicknesses is different. Becomes the magnetization of the entire free magnetic layer 28, the magnetization direction of the free magnetic layer 28 is aligned with the X1 direction in the figure, and the magnitude of this magnetization is reduced. The magnetization direction changes with high sensitivity.

The above-described spin-valve thin-film magnetic element 8 comprises:
An underlayer, a first free magnetic layer, a nonmagnetic intermediate film, a second free magnetic layer, a nonmagnetic conductive layer, a first fixed magnetic layer, another nonmagnetic intermediate layer, a second fixed magnetic layer, and an antiferromagnet on a substrate. It is manufactured in the same manner as the spin-valve thin-film magnetic element 2 described above, except that the thin films are stacked to form a stacked precursor.

The above-described spin-valve thin-film magnetic element 8 has the following effects in addition to the same effects as those of the above-described spin-valve thin-film magnetic element 1. That is, in the above-described spin-valve thin-film magnetic element 8, the fixed magnetic layer 2
Numeral 4 comprises a nonmagnetic intermediate layer 22, a first fixed magnetic layer 21, and a second fixed magnetic layer 23. The magnetization direction of the second fixed magnetic layer 23 is fixed in the Y direction in the drawing, and the magnetization direction of the first fixed magnetic layer 21. Are fixed in the direction opposite to the Y direction in the figure, so that the magnetic moments of the first and second fixed magnetic layers 21 and 23 cancel each other, but the thickness of the first fixed magnetic layer 21 is slightly reduced. As a result, the spontaneous magnetization of the pinned magnetic layer 24 itself slightly remains, and this spontaneous magnetization is further amplified by the exchange coupling magnetic field with the antiferromagnetic layer 18, and
Magnetization direction is firmly fixed in the direction opposite to the illustrated Y direction,
The stability of the spin-valve thin-film magnetic element 8 can be improved.

Further, since the second pinned magnetic layer 23 and the antiferromagnetic thin film 18a are simultaneously laminated, the second pinned magnetic layer 23
If the antiferromagnetic thin film 18a and the antiferromagnetic layer 18 are integrated with each other without mixing impurities or the like at the interface between the second pinned magnetic layer 23 and the antiferromagnetic thin film 18a,
An exchange coupling magnetic field is easily generated at the interface with a, and the magnetization direction of the second fixed magnetic layer 23 can be fixed in the Y direction in the figure.

Further, the first and second free magnetic layers 25 and 27
Are antiferromagnetically coupled to each other to be in a ferrimagnetic state, and the magnetic moments of the first and second free magnetic layers cancel each other out, but the first free magnetic layer 25 and the second free magnetic layer 27 The magnetization corresponding to the difference in thickness becomes the magnetization of the entire free magnetic layer 28, and this magnetization is reduced.
The magnetization direction of the free magnetic layer 28 can be changed with high sensitivity to changes in the external magnetic field, and the sensitivity of the spin-valve thin-film magnetic element 8 can be improved.

(Ninth Embodiment) FIG. 12 shows a ninth embodiment of the present invention.
1 shows a sectional view of a spin-valve thin-film magnetic element according to an embodiment of the present invention. In FIG. 12, the same components as those shown in FIGS. 1 and 9 are given the same reference numerals, and the components will be described briefly.

The spin-valve thin-film magnetic element 9 shown in FIG. 12 has a laminate 5 in which an underlayer 11, a free magnetic layer 28, a nonmagnetic conductive layer 13, and a fixed magnetic layer 24 are sequentially laminated.
0 is provided.

The pinned magnetic layer 24 includes the non-magnetic intermediate layer 22 and
The first fixed magnetic layer 21 and the second fixed magnetic layer 23 sandwich the nonmagnetic intermediate layer 22. The thickness of the first fixed magnetic layer 21 is larger than that of the second fixed magnetic layer 23. The free magnetic layer 28 includes a non-magnetic intermediate layer 26 and a non-magnetic intermediate layer 26.
Free magnetic layer 25 and second free magnetic layer 27 sandwiching
Consists of Also, the first and second free magnetic layers 25 and 27
Is preferably slightly different. In FIG. 12, the thickness of the first free magnetic layer 25 is larger than that of the second free magnetic layer 27.

On both sides of the stacked body 50 in the X1 direction in the drawing, a pair of bias layers 16
16 are adjacent. The bias layers 16, 16 are located at the same level as the stacked body 50, and the upper surfaces 16 b, 16 b constitute substantially the same plane as the upper surface 50 b of the stacked body 50, and a part thereof is inclined side surfaces 50 a, I am on 50a. Therefore, the bias layers 16 shown in FIG.
Although a part thereof rides on the inclined side surface 50a of the stacked body 50, it does not have a shape protruding in the Z direction in the drawing unlike the conventional spin-valve thin-film magnetic element.

The bias layers 16, 16 have intermediate layers 17, 1.
7 and the upper surfaces 5 of the intermediate layers 17 and 17 and the laminate 50
A ferromagnetic thin film 14a is laminated on 0b. An antiferromagnetic layer 18 and a protective layer 19 are laminated on the ferromagnetic thin film 14a. Further, a protective layer 19 is laminated on the antiferromagnetic layer 18, and a pair of conductive layers 20, 20 are laminated on the protective layer 19.

By stacking the antiferromagnetic layer 18 in contact with the ferromagnetic thin film 14a, an exchange coupling magnetic field is generated at the interface between the ferromagnetic thin film 14a and the antiferromagnetic layer 18. Since the ferromagnetic thin film 14a is stacked on the second pinned magnetic layer 23, the exchange coupling magnetic field developed at the interface between the ferromagnetic thin film 14a and the antiferromagnetic layer 18 is applied to the second pinned magnetic layer 23. The magnetization direction is fixed in the illustrated Y direction. The first pinned magnetic layer is antiferromagnetically coupled to the second pinned magnetic layer 23, and its magnetization direction is fixed in the direction opposite to the Y direction in the figure.

Since the magnetization directions of the first and second fixed magnetic layers 21 and 23 are antiparallel to each other, the magnetic moments of the first and second fixed magnetic layers 21 and 23 cancel each other. Since the thickness of the first pinned magnetic layer 21 is slightly large, the spontaneous magnetization of the pinned magnetic layer 24 itself slightly remains. This spontaneous magnetization is further amplified by the exchange coupling magnetic field with the antiferromagnetic layer 18. The magnetization direction of the fixed magnetic layer 24 is fixed in the direction opposite to the Y direction in the figure.

The first and second free magnetic layers 25 and 27 are magnetically coupled to each other by an exchange coupling magnetic field to be in a ferrimagnetic state. That is, the magnetization direction of the first free magnetic layer 25 is aligned in the X1 direction by the magnetization of the bias layers 16, 16, and the second free magnetic layer 27 is antiferromagnetically coupled to the first free magnetic layer 25. The magnetization direction is aligned in the direction opposite to the X1 direction in the figure. First and second free magnetic layers 2
Since the magnetization directions of 5 and 27 are antiparallel to each other,
Although the magnetic moments of the first and second free magnetic layers cancel each other, since the thickness of the first free magnetic layer 25 is larger than that of the second free magnetic layer 27, the difference between the thicknesses is different. Becomes the magnetization of the entire free magnetic layer 28, the magnetization direction of the free magnetic layer 28 is aligned with the X1 direction in the figure, and the magnitude of this magnetization is reduced. The magnetization direction changes with high sensitivity.

The spin-valve thin-film magnetic element 9 described above
A base layer, a first free magnetic layer, a non-magnetic intermediate film, a second free magnetic layer, a non-magnetic conductive layer, a first fixed magnetic layer, another non-magnetic intermediate layer, and a second fixed magnetic layer are laminated on a substrate. It is manufactured in the same manner as the spin-valve thin-film magnetic element 3 described above, except that the laminated precursor is formed.

The above-described spin-valve thin-film magnetic element 9 has the following effects in addition to the same effects as those of the above-described spin-valve thin-film magnetic element 1. That is, in the above-described spin-valve thin-film magnetic element 9, the ferromagnetic thin film 1
4a and the antiferromagnetic layer 18 are in close contact with each other without any intervening impurities, and the ferromagnetic thin film 14a is in contact with the second pinned magnetic layer 23. Is applied to the second pinned magnetic layer 23, and the magnetization direction of the second pinned magnetic layer 23 is fixed in the Y direction in the drawing, whereby the magnetization direction of the first fixed magnetic layer 21 is changed to the Y direction in the drawing. As a result, the spontaneous magnetization of the pinned magnetic layer 24 itself slightly remains, and this spontaneous magnetization is further amplified by the exchange coupling magnetic field with the antiferromagnetic layer 18 to change the magnetization direction of the pinned magnetic layer 24. The spin-valve thin-film magnetic element 9 can be firmly fixed in the direction opposite to the Y direction in the drawing.
Stability can be further improved.

In addition, the first and second free magnetic layers 25 and 27
Are antiferromagnetically coupled to each other to be in a ferrimagnetic state, and the magnetic moments of the first and second free magnetic layers cancel each other out, but the first free magnetic layer 25 and the second free magnetic layer 27 The magnetization corresponding to the difference in thickness becomes the magnetization of the entire free magnetic layer 28, and this magnetization is reduced.
The magnetization direction of the free magnetic layer 28 can be changed with high sensitivity to changes in the external magnetic field, and the sensitivity of the spin-valve thin-film magnetic element 9 can be improved.

(Tenth Embodiment) FIG. 13 is a sectional view of a spin-valve thin film magnetic element according to a tenth embodiment of the present invention. In FIG. 13, the same components as those shown in FIG. 1 described above are denoted by the same reference numerals, and the components will be described briefly.

The spin-valve thin-film magnetic element 70 shown in FIG. 13 includes a laminated body 10 in which an underlayer 11, a free magnetic layer 12, a nonmagnetic conductive layer 13, and a fixed magnetic layer 14 are sequentially laminated. I have. A pair of bias layers 16, 16 are adjacent to each other on both sides in the X1 direction of the laminate 10 via the bias underlayers 15, 15. Bias layers 16, 16
Are located on the same level as the laminate 10 and have upper surfaces 16b,
16b constitutes substantially the same surface as the upper surface 10b of the laminate 10;
In addition, a part thereof rides on the inclined side surfaces 10a, 10a of the laminated body 10. Therefore, the bias layer 1 shown in FIG.
6, 16 are partially inclined side surfaces 10a of the laminate 10;
Although it rides on 10a, it does not have a shape protruding in the Z direction in the drawing as in the conventional spin-valve thin-film magnetic element.

The bias layers 16, 16 have intermediate layers 17, 1,
7 and a part of the intermediate layers 17 and 17 and the laminate 10
An antiferromagnetic layer 31 is laminated on the upper surface 10b of the substrate. The antiferromagnetic layer 31 is formed in a substantially trapezoidal shape in cross section as in the case of the multilayer body 10. Both sides of the antiferromagnetic layer 31 in the X1 direction are two inclined side surfaces 31a. Inclined side 31
a and 31a are inclined so as to approach each other in a direction away from the substrate 7, that is, in the illustrated Z direction. The antiferromagnetic layer 31 is formed such that its length in the X1 direction is substantially the same as the length of the multilayer body 10. This antiferromagnetic layer 31 is made of the same material as the antiferromagnetic layer 18 in FIG. The antiferromagnetic layer 31 has, for example, T
The protective layer 32 made of a is laminated.

On both sides of the antiferromagnetic layer 31 in the X1 direction in the drawing,
A pair of conductive layers 33, 33 are arranged. The conductive layers 33 are stacked on the intermediate layers 17 and are formed in contact with the inclined side surfaces 31 a of the antiferromagnetic layer 31.

Next, a method of manufacturing the above-described spin-valve thin-film magnetic element 70 will be described with reference to FIGS. 16 to 20 and FIGS. Since the description of FIGS. 16 to 20 here is exactly the same as the description of FIGS. 16 to 20 in the method of manufacturing the spin-valve thin-film magnetic element 1 described above, only FIGS. 24 to 27 will be described here. .

The pre-process of the process shown in FIG. 24 is as shown in FIG. 20, and FIG. 20 will be described again to facilitate the description of FIG. 24. FIG. The underlayers 15, 15, the bias layer 16 and the intermediate layers 17, 17 are sequentially laminated to form a first lift-off resist 8.
The state after removing 0 is shown. Subsequently, in FIG. 24, an antiferromagnetic layer 31 and a protective layer 32 are laminated on the laminate 10 and the intermediate layers 17 and 17. Before laminating the antiferromagnetic layer 31, it is necessary to etch the upper surface 10b of the laminated body 10 by means such as ion milling or reverse sputtering. This is because the first step of removing the first lift-off resist 80 is performed outside the sputtering apparatus or the like.
The substrate 7 and the like are temporarily exposed to the atmospheric pressure atmosphere. At this time, the upper surface 10b of the stacked body 10 (fixed magnetic layer) is contaminated with impurities such as oxygen in the atmosphere. Even if the antiferromagnetic layer 18 is laminated on the upper surface, an exchange coupling magnetic field cannot be generated at the interface between these layers.
This is because it is necessary to etch the upper surface 10b of the multilayer body 10 (fixed magnetic layer) before removing the antiferromagnetic layer 18 to remove impurities.

Next, as shown in FIG. 25, a third lift-off resist 82 is formed on the protective layer 32, and portions not covered with the third lift-off resist 82 are ion-milled (physical ion beam etching). Then, the intermediate layers 17 and 17 are exposed, and the antiferromagnetic layer 31 and the protective layer 32 are processed into a substantially trapezoidal shape in cross section. At this time, the inclined side surfaces 31a, 31a are formed in the antiferromagnetic layer 31.
It is preferable that the third lift-off resist 82 be formed at a position overlapping with the stacked body 10 in that only the antiferromagnetic layer 31 in a portion in contact with the stacked body 10 can be left.

Next, as shown in FIG.
17, the conductive layer 33 is laminated on the inclined side surfaces 31a, 31a and the third lift-off resist 82. The conductive layer 33 stacked on the intermediate layers 17, 17 is in contact with the inclined side surfaces 31a, 31a and is stacked on the inclined side surfaces 31a, 31a. The adhesion layer 82a of the constituent material of the conductive layer 33 is adhered to the third lift-off resist 82. Finally, as shown in FIG. 27, the third lift-off resist 82 is removed, and the spin-valve thin-film magnetic element 70 shown in FIG. 13 is obtained.

The above-described spin-valve thin-film magnetic element 70 has the following effects in addition to the same effects as those of the above-described spin-valve thin-film magnetic element 1. That is, in the spin-valve thin-film magnetic element 70, the conductive layers 33, 3
3 is connected to the bias layers 16, 16 through the intermediate layers 17, 17.
And the inclined side wall surface 3 of the antiferromagnetic layer 31.
1a and 31a, the conductive layers 33 and 33 and the bias layers 16 and 16 are adjacent to each other via the intermediate layers 17 and 17, and the bias layers 16 and 16 are stacked including the nonmagnetic conductive layer 13. Since it is adjacent to the body 10, the conductive layer 3
3 and 33, the detection current can be supplied to the nonmagnetic conductive layer 13 without passing through the antiferromagnetic layer 31 having a large specific resistance. The detection sensitivity of the magnetic element 70 can be increased. Further, the conductive layers 33, 33 and the bias layer 1
Since the intermediate layers 17 and 17 are provided between the layers 6 and 16, thermal diffusion between the conductive layer 20 and the bias layer 16 caused by heat treatment (UV curing) in a manufacturing process of the inductive head, which is a later process, is prevented. Prevented, bias layer 1
It is possible to prevent the deterioration of the magnetic properties of 6, 16.

In the method of manufacturing the spin-valve thin-film magnetic element 70 described above, the portion of the antiferromagnetic layer 31 that overlaps with the stacked body 10 is left, and the bias is adjacent to both sides of the antiferromagnetic layer 31. Conductive layer 3 laminated on the layer
Since the layers 3 and 33 are formed, the detection current from the conductive layers 33 and 33 can be supplied to the nonmagnetic conductive layer 13 without passing through the antiferromagnetic layer 32 having a large specific resistance. The spin valve type thin film magnetic element 70 having a large amount and high detection sensitivity can be manufactured.

(Eleventh Embodiment) FIG. 14 is a sectional view of a spin-valve thin film magnetic element according to an eleventh embodiment of the present invention. In FIG. 14, the same components as those shown in FIGS. 4 and 13 are denoted by the same reference numerals, and the components will be described briefly.

The spin-valve thin-film magnetic element 71 shown in FIG. 14 is provided with a laminate 30 in which an underlayer 11, a free magnetic layer 12, a nonmagnetic conductive layer 13, and a fixed magnetic layer 24 are sequentially laminated. I have.

On both sides of the stacked body 30 in the X1 direction in the drawing, a pair of bias layers 16,
16 are adjacent. The bias layers 16, 16 are located at the same level as the stacked body 30, and the upper surfaces 16 b, 16 b constitute substantially the same surface as the upper surface 30 b of the stacked body 30, and a part thereof has inclined side surfaces 30 a, I am on 30a. Therefore, the bias layers 16 and 16 shown in FIG.
Although a part thereof rides on the inclined side surface 30a of the stacked body 30, it does not have a shape protruding in the Z direction in the drawing as in the conventional spin-valve thin film magnetic element.

The pinned magnetic layer 24 includes the non-magnetic intermediate layer 22 and
The first fixed magnetic layer 21 and the second fixed magnetic layer 23 sandwich the nonmagnetic intermediate layer 22. It is preferable that the first and second pinned magnetic layers 21 and 23 have slightly different thicknesses. In FIG. 14, the thickness of the first fixed magnetic layer 21 is smaller than that of the second fixed magnetic layer 23. It is said to be large.

The bias layers 16, 16 have intermediate layers 17, 1,
7 and a part of the intermediate layers 17 and 17 and the laminate 30
An antiferromagnetic layer 31 is laminated on the upper surface 30b of the substrate. The antiferromagnetic layer 31 is formed in a substantially trapezoidal shape in cross section as in the case of the multilayer body 30, and the antiferromagnetic layer 31 has two inclined side surfaces 31 a on both sides in the X1 direction in the drawing. Inclined side 31
a and 31a are inclined so as to approach each other in a direction away from the substrate 7, that is, in the illustrated Z direction. Further, a protective layer 32 made of, for example, Ta is laminated on the antiferromagnetic layer 31.

The magnetization direction of the second pinned magnetic layer 23 is fixed in the Y direction in the figure by the exchange coupling magnetic field with the antiferromagnetic layer 31, and the first pinned magnetic layer 21 is And the magnetization direction is fixed in the direction opposite to the Y direction in the figure. Since the magnetization directions of the first and second pinned magnetic layers 21 and 23 are antiparallel to each other, the first and second pinned magnetic layers 21 and 23 are
Although the magnetic moments of the fixed magnetic layers 21 and 23 cancel each other, the spontaneous magnetization of the fixed magnetic layer 24 itself slightly remains because the thickness of the first fixed magnetic layer 21 is slightly large. This spontaneous magnetization is further amplified by the exchange coupling magnetic field with the antiferromagnetic layer 31, and the magnetization direction of the fixed magnetic layer 24 is fixed in the direction opposite to the Y direction in the figure.

On both sides of the antiferromagnetic layer 31 in the X1 direction in the drawing,
A pair of conductive layers 33, 33 are formed. The conductive layers 33, 33 are formed on the inclined side surfaces 31a, 31 of the antiferromagnetic layer 31.
a, and is laminated on the intermediate layers 17 and 17.

The above-described spin-valve thin-film magnetic element 71
Is the same as that described above except that a laminated precursor is formed by laminating an underlayer, a free magnetic layer, a nonmagnetic conductive layer, a first fixed magnetic layer, a nonmagnetic intermediate layer, and a second fixed magnetic layer on a substrate. It is manufactured in the same manner as the spin-valve thin-film magnetic element 70.

The above-described spin-valve thin-film magnetic element 71 has the following effects in addition to the same effects as those of the above-described spin-valve thin-film magnetic element 70. That is, in the spin-valve thin-film magnetic element 71, the fixed magnetic layer 2
Numeral 4 comprises a nonmagnetic intermediate layer 22, a first fixed magnetic layer 21, and a second fixed magnetic layer 23. The magnetization direction of the second fixed magnetic layer 23 is fixed in the Y direction in the drawing, and the magnetization direction of the first fixed magnetic layer 21. Are fixed in the direction opposite to the Y direction in the figure, so that the magnetic moments of the first and second fixed magnetic layers 21 and 23 cancel each other, but the thickness of the first fixed magnetic layer 21 is slightly reduced. As a result, the spontaneous magnetization of the pinned magnetic layer 24 itself slightly remains, and this spontaneous magnetization is further amplified by the exchange coupling magnetic field with the antiferromagnetic layer 31, and
Magnetization direction is firmly fixed in the direction opposite to the illustrated Y direction,
The stability of the spin-valve thin-film magnetic element 71 can be improved.

(Twelfth Embodiment) FIG. 15 is a sectional view of a spin-valve thin film magnetic element according to a twelfth embodiment of the present invention. In FIG. 15, the same components as those shown in FIGS. 5 and 13 are denoted by the same reference numerals, and the components will be described briefly.

The spin-valve thin-film magnetic element 72 shown in FIG. 15 includes a laminate 50 in which the underlayer 11, the free magnetic layer 28, the nonmagnetic conductive layer 13, and the fixed magnetic layer 24 are sequentially laminated. I have. On both sides of the laminate 50 in the X1 direction in the drawing, a pair of bias layers 1
6, 16 are adjacent. The bias layers 16, 16 are located on the same level as the stacked body 50, and have upper surfaces 16b, 16b
Constitutes substantially the same surface as the upper surface 50b of the laminate 50, and a part thereof rides on the inclined side surfaces 50a, 50a of the laminate 50. Therefore, the bias layers 16, 1 shown in FIG.
Although the part 6 rides on the inclined side surface 50a of the stacked body 50, the part 6 does not have a shape protruding in the Z direction in the drawing unlike the conventional spin-valve thin film magnetic element.

The pinned magnetic layer 24 includes the non-magnetic intermediate layer 22 and
The first fixed magnetic layer 21 and the second fixed magnetic layer 23 sandwich the nonmagnetic intermediate layer 22. The first and second pinned magnetic layers 21 and 23 preferably have slightly different thicknesses. In FIG. 15, the thickness of the first pinned magnetic layer 21 is smaller than that of the second pinned magnetic layer 23. It is said to be large.

The bias layers 16 and 16 have the intermediate layers 17 and 1
7 and a part of the intermediate layers 17 and 17 and the laminate 50
The antiferromagnetic layer 31 is laminated on the upper surface 50b of the substrate. The antiferromagnetic layer 31 is formed in a substantially trapezoidal shape in cross section similarly to the stacked body 50, and two inclined side surfaces 31a on both sides in the X1 direction in the drawing of the antiferromagnetic layer 31 are formed. Inclined side 31
a and 31a are inclined so as to approach each other in a direction away from the substrate 7, that is, in the illustrated Z direction. Further, a protective layer 32 made of, for example, Ta is laminated on the antiferromagnetic layer 31.

The magnetization direction of the second pinned magnetic layer 23 is fixed in the Y direction in the figure by an exchange coupling magnetic field with the antiferromagnetic layer 31, and the first pinned magnetic layer 21 is And the magnetization direction is fixed in the direction opposite to the Y direction in the figure. Since the magnetization directions of the first and second pinned magnetic layers 21 and 23 are antiparallel to each other, the first and second pinned magnetic layers 21 and 23 are
Although the magnetic moments of the fixed magnetic layers 21 and 23 cancel each other, the spontaneous magnetization of the fixed magnetic layer 24 itself slightly remains because the thickness of the first fixed magnetic layer 21 is slightly large. This spontaneous magnetization is further amplified by the exchange coupling magnetic field with the antiferromagnetic layer 31, and the magnetization direction of the fixed magnetic layer 24 is fixed in the direction opposite to the Y direction in the figure.

The free magnetic layer 28 comprises the non-magnetic intermediate layer 26
And a first free magnetic layer 25 and a second free magnetic layer 27 sandwiching a non-magnetic intermediate layer 26. Further, it is preferable that the thicknesses of the first and second free magnetic layers 25 and 27 are slightly different. In FIG. 15, the thickness of the first free magnetic layer 25 is smaller than that of the second free magnetic layer 27. It is said to be large.

The first and second free magnetic layers 25 and 27 are magnetically coupled to each other by an exchange coupling magnetic field to be in a ferrimagnetic state. That is, the magnetization direction of the first free magnetic layer 25 is aligned in the X1 direction by the magnetization of the bias layers 16, 16, and the second free magnetic layer 27 is antiferromagnetically coupled to the first free magnetic layer 25. The magnetization direction is aligned in the direction opposite to the X1 direction in the figure. First and second free magnetic layers 2
Since the magnetization directions of 5 and 27 are antiparallel to each other,
Although the magnetic moments of the first and second free magnetic layers cancel each other, since the thickness of the first free magnetic layer 25 is larger than that of the second free magnetic layer 27, the difference between the thicknesses is different. Becomes the magnetization of the entire free magnetic layer 28, the magnetization direction of the free magnetic layer 28 is aligned with the X1 direction in the figure, and the magnitude of this magnetization is reduced. The magnetization direction changes with high sensitivity.

On both sides of the antiferromagnetic layer 31 in the X1 direction in the drawing,
A pair of conductive layers 33, 33 are formed. The conductive layers 33, 33 are formed on the inclined side surfaces 31a, 31 of the antiferromagnetic layer 31.
a, and is laminated on the intermediate layers 17 and 17.

The above-described spin-valve thin-film magnetic element 72
Comprises a base layer, a first free magnetic layer, a non-magnetic intermediate film, a second free magnetic layer, a non-magnetic conductive layer, a first fixed magnetic layer, another non-magnetic intermediate layer, and a second fixed magnetic layer on a substrate. It is manufactured in the same manner as the spin-valve thin-film magnetic element 70 described above, except that it is laminated to form a laminated precursor.

In the above-described spin-valve thin-film magnetic element 72, the following effects are obtained in addition to the same effects as those of the above-described spin-valve thin-film magnetic element 71. That is, in the above-described spin-valve thin-film magnetic element 72, the first,
The second free magnetic layers 25 and 27 are antiferromagnetically coupled and enter a ferrimagnetic state, and the first and second free magnetic layers
The magnetic moments of the first free magnetic layer 25 and the second free magnetic layer 27 cancel each other.
The magnetization corresponding to the difference in the thickness of the free magnetic layer 28 becomes the magnetization of the entire free magnetic layer 28, and this magnetization is reduced. Therefore, the magnetization direction of the free magnetic layer 28 can be changed with high sensitivity to a change in the external magnetic field. The sensitivity of the valve-type thin-film magnetic element 72 can be improved.

[0173]

As described above in detail, in the spin-valve thin-film magnetic element of the present invention, the laminated body is provided with two inclined side surfaces, and the bias layer is arranged on the same layer as the laminated body. A part thereof rides on the inclined side surface, and an upper surface thereof is formed so as to be substantially at the same position as an upper surface of the multilayer body. The antiferromagnetic layer is formed by combining at least a part of the bias layer with the multilayer body. Since it is covered and laminated, like a conventional spin-valve thin film magnetic element,
The cross-sectional shape of the bias layer riding on the inclined side surface of the laminate does not protrude and become sharp, and the free magnetic layer does not become multi-domain due to the leakage magnetic field from the bias layer. Housen noise can be reduced.

Further, in the spin-valve thin film magnetic element of the present invention, since the antiferromagnetic layer is constituted so as to be in contact with the antiferromagnetic thin film and to be integrated with the antiferromagnetic thin film, No impurities enter the interface,
If the antiferromagnetic thin film and the antiferromagnetic layer are integrated, an exchange coupling magnetic field is easily generated at the interface between the fixed magnetic layer and the antiferromagnetic thin film, and the magnetization direction of the fixed magnetic layer is changed to a predetermined direction. It becomes possible to fix firmly.

Further, in the spin-valve thin film magnetic element of the present invention, since a ferromagnetic thin film is provided at least between the laminated body and the antiferromagnetic layer, impurities are mixed into the interface between these layers. Since the ferromagnetic thin film is in contact with the fixed magnetic layer, an exchange coupling magnetic field is easily generated between the antiferromagnetic layer and the ferromagnetic thin film, and the exchange coupling magnetic field is transmitted through the ferromagnetic thin film. Applied to the fixed magnetic layer,
The magnetization direction of the fixed magnetic layer can be fixed in a predetermined direction.

Further, X is added to the antiferromagnetic layer and the antiferromagnetic thin film.
By forming a spin-valve thin film magnetic element using an alloy represented by the formula of -Mn or an alloy represented by the formula of X'-Pt-Mn, Ni which has been conventionally used for the antiferromagnetic layer can be used.
Compared to those using an O alloy, a FeMn alloy, a NiMn alloy, etc., a spin valve type thin film magnetic element having a large exchange coupling magnetic field, a high blocking temperature, and excellent properties such as excellent corrosion resistance. It becomes possible to do.

In the spin-valve thin-film magnetic element of the present invention, since the pair of conductive layers are stacked on the antiferromagnetic layer while being separated from each other, it is possible to reliably apply a detection current to the stack. it can.

The pair of conductive layers may be stacked on the bias layer adjacent to both sides of the antiferromagnetic layer. In this case, the conductive layer and the bias layer are adjacent to each other. However, since the bias layer is adjacent to the laminate including the nonmagnetic conductive layer, it is possible to apply the detection current from the conductive layer to the nonmagnetic conductive layer without passing through the antiferromagnetic layer having a large specific resistance. Further, the detection sensitivity of the spin-valve thin-film magnetic element can be increased by increasing the amount of change in the magnetic resistance due to the external magnetic field.

By providing an intermediate layer made of a non-magnetic material such as Ta or Cr, the free magnetic layer can be formed into a single magnetic domain without magnetic coupling between the bias layer and the antiferromagnetic layer. The required bias magnetic field can be increased. In addition, it is possible to prevent thermal diffusion between the conductive layer and the bias layer caused by heat treatment (UV curing) in a manufacturing process of the inductive head, which is a later step, and to prevent deterioration of magnetic properties of the bias layer. Further, by providing a bias underlayer made of Cr having a body-centered cubic structure (bcc structure), the bias layer can be epitaxially grown on the bias underlayer and the easy axis of the bias layer can be aligned in a predetermined direction. As a result, the coercive force and the squareness ratio of the bias layer are increased, and the bias magnetic field required for making the free magnetic layer a single magnetic domain can be increased.

When the free magnetic layer is composed of first and second free magnetic layers antiferromagnetically coupled via a non-magnetic intermediate layer, the first and second free magnetic layers are exchanged by an exchange coupling magnetic field. When the first free magnetic layer is slightly thicker than the second free magnetic layer, for example, the magnetization direction of the first free magnetic layer is changed to the bias layer. The magnetization is aligned in a certain direction by the magnetization, the magnetization direction of the second free magnetic layer is made opposite to the magnetization direction of the first free magnetic layer, and the magnetic moments of the first and second free magnetic layers cancel each other. However, since the thickness of the first free magnetic layer is larger than that of the second free magnetic layer, the magnetization corresponding to the difference between the thicknesses becomes the magnetization of the free magnetic layer, and the magnetization becomes smaller. Free by change The magnetization direction of the sexually layer varies sensitively,
The detection sensitivity of the spin valve thin film magnetic element can be increased.

In the case where the fixed magnetic layer is composed of first and second fixed magnetic layers antiferromagnetically coupled via a non-magnetic intermediate layer, the first and second fixed magnetic layers are formed by an exchange coupling magnetic field. Magnetically coupled to a ferrimagnetic state, the first and second
If the thickness of the pinned magnetic layer is made slightly different, the first and second
Even if the magnetic moments of the fixed magnetic layer cancel each other, a small amount of spontaneous magnetization of the fixed magnetic layer remains, and this spontaneous magnetization is further amplified by the exchange coupling magnetic field with the antiferromagnetic layer,
The magnetization direction of the fixed magnetic layer can be firmly fixed, and the stability of the spin-valve thin-film magnetic element can be enhanced.

In the method of manufacturing a spin-valve thin-film magnetic element of the present invention, a laminate is formed on a substrate, bias layers are formed on both sides of the laminate, and the upper surface of the bias layer is substantially flush with the upper surface of the laminate. Since the antiferromagnetic layer is laminated on the same position, the cross-sectional shape of the bias layer riding on the inclined side surface of the laminated body does not become protruding and sharp as in the past, and the leakage magnetic field from the bias layer Thereby, the free magnetic layer is not formed into multiple magnetic domains, and a spin-valve thin-film magnetic element in which the free magnetic layer is formed into a single magnetic domain can be manufactured.

Further, in the method of manufacturing a spin-valve thin-film magnetic element of the present invention, the lamination precursor is formed by laminating the free magnetic layer, the non-magnetic conductive layer, the fixed magnetic layer, and the antiferromagnetic thin film. May be formed and the antiferromagnetic layer may be stacked in contact with the antiferromagnetic thin film. In this case, since the pinned magnetic layer and the antiferromagnetic thin film are simultaneously stacked, the interface between these layers may be oxygen or the like. Since the antiferromagnetic thin film is substantially contained in the antiferromagnetic layer by integrating the antiferromagnetic layer onto the antiferromagnetic thin film without mixing the An exchange coupling magnetic field is generated at the interface between the layer and the antiferromagnetic thin film, and a spin-valve thin-film magnetic element including a fixed magnetic layer whose magnetization direction is firmly fixed by the exchange coupling magnetic field can be manufactured.

Further, in the method for manufacturing a spin-valve thin-film magnetic element of the present invention, after removing the first lift-off resist, a ferromagnetic thin film is formed on at least the laminate, and the ferromagnetic thin film is formed on the ferromagnetic thin film. A ferromagnetic layer may be laminated. In this case, since the ferromagnetic thin film and the antiferromagnetic layer are formed simultaneously, impurities such as oxygen are not mixed into the interface between the ferromagnetic thin film and the antiferromagnetic layer. The exchange coupling magnetic field is easily developed at the interface with the magnetic layer, and the ferromagnetic thin film is laminated on the fixed magnetic layer, and these are integrated into the ferromagnetic thin film substantially contained in the fixed magnetic layer. Therefore, the generated exchange coupling magnetic field can firmly fix the magnetization direction of the fixed magnetic layer.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a structure of a spin-valve thin-film magnetic element according to a first embodiment of the present invention when viewed from a surface facing a recording medium.

FIG. 2 is a schematic diagram for explaining directions of magnetization of a bias layer and a free magnetic layer of the spin-valve thin-film magnetic element shown in FIG.

FIG. 3 is a perspective view of a thin-film magnetic head including a spin-valve thin-film magnetic element according to the first embodiment of the present invention.

4 is a sectional view of a main part of the thin-film magnetic head shown in FIG.

FIG. 5 is a cross-sectional view illustrating a structure of a spin-valve thin-film magnetic element according to a second embodiment of the present invention when viewed from a surface facing a recording medium.

FIG. 6 is a cross-sectional view illustrating a structure of a spin-valve thin-film magnetic element according to a third embodiment of the present invention when viewed from a surface facing a recording medium.

FIG. 7 is a cross-sectional view showing a structure of a spin-valve thin-film magnetic element according to a fourth embodiment of the present invention when viewed from a surface facing a recording medium.

FIG. 8 is a cross-sectional view showing a structure of a spin-valve thin-film magnetic element according to a fifth embodiment of the present invention when viewed from a surface facing a recording medium.

FIG. 9 is a cross-sectional view illustrating a structure of a spin-valve thin-film magnetic element according to a sixth embodiment of the present invention when viewed from a surface facing a recording medium.

FIG. 10 is a sectional view showing a structure of a spin-valve thin-film magnetic element according to a seventh embodiment of the present invention when viewed from a surface facing a recording medium.

FIG. 11 is a cross-sectional view showing a structure of a spin-valve thin-film magnetic element according to an eighth embodiment of the present invention when viewed from a side facing a recording medium.

FIG. 12 is a cross-sectional view illustrating a structure of a spin-valve thin-film magnetic element according to a ninth embodiment of the present invention when viewed from a surface facing a recording medium.

FIG. 13 is a cross-sectional view showing a structure of a spin-valve thin-film magnetic element according to a tenth embodiment of the present invention when viewed from a surface facing a recording medium.

FIG. 14 is a sectional view showing a structure of a spin-valve thin-film magnetic element according to an eleventh embodiment of the present invention when viewed from a surface facing a recording medium.

FIG. 15 is a cross-sectional view showing a structure of a spin-valve thin-film magnetic element according to a twelfth embodiment of the present invention when viewed from a surface facing a recording medium.

FIG. 16 is a process chart for illustrating the method for manufacturing a spin-valve thin-film magnetic element of the present invention.

FIG. 17 is a process chart for illustrating the method of manufacturing a spin-valve thin-film magnetic element according to the present invention.

FIG. 18 is a process chart illustrating a method for manufacturing a spin-valve thin-film magnetic element of the present invention.

FIG. 19 is a process chart illustrating a method for manufacturing a spin-valve thin-film magnetic element of the present invention.

FIG. 20 is a process chart for illustrating the method for manufacturing a spin-valve thin-film magnetic element of the present invention.

FIG. 21 is a process chart illustrating a method for manufacturing a spin-valve thin-film magnetic element of the present invention.

FIG. 22 is a process chart for explaining the method for manufacturing a spin-valve thin-film magnetic element of the present invention.

FIG. 23 is a process chart for illustrating the method of manufacturing a spin-valve thin-film magnetic element according to the present invention.

FIG. 24 is a process chart for explaining another method for manufacturing a spin-valve thin-film magnetic element of the present invention.

FIG. 25 is a process diagram for explaining another method for manufacturing a spin-valve thin-film magnetic element of the present invention.

FIG. 26 is a process chart for explaining another method for manufacturing a spin-valve thin-film magnetic element of the present invention.

FIG. 27 is a process diagram for describing another method for manufacturing a spin-valve thin-film magnetic element of the present invention.

FIG. 28 is a cross-sectional view showing a structure of a conventional spin-valve thin-film magnetic element when viewed from the side facing a recording medium.

FIG. 29 is a schematic diagram for explaining the directions of magnetization of a bias layer and a free magnetic layer of the spin-valve thin-film magnetic element shown in FIG. 28.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Spin valve thin film magnetic element 7 Substrate 10, 30, 50, 60, 61, 62 Stack 11 Underlayer 12, 28 Free magnetic layer 13 Nonmagnetic conductive layer 14, 24 Fixed magnetic layer 14a Ferromagnetic thin film 15 Bias underlayer Reference Signs List 16 bias layer 17 intermediate layer 18, 31 antiferromagnetic layer 18a antiferromagnetic thin film 19, 32 protective layer 20, 33 conductive layer 80 first lift-off resist 81 second lift-off resist 82 third lift-off resist

Claims (22)

[Claims] 1. A laminate in which at least a free magnetic layer, a nonmagnetic conductive layer, and a pinned magnetic layer are laminated on a substrate, and the free magnetic layer is positioned on both sides of the laminate in one direction. A pair of bias layers, and an antiferromagnetic layer that is in contact with the fixed magnetic layer and fixes the magnetization direction of the fixed magnetic layer in a direction that intersects the magnetization direction of the free magnetic layer by an exchange coupling magnetic field. A pair of conductive layers for applying a detection current to the free magnetic layer, wherein the pair of bias layers are provided on the substrate and are positioned on the same layer as the laminate, and the antiferromagnetic layer is A spin-valve thin-film magnetic element, which is stacked in contact with at least a part of the bias layer and the stacked body. 2. The spin-valve thin-film magnetic element according to claim 1, wherein an upper surface of said bias layer is substantially flush with an upper surface of said stacked body. 3. The spin-valve thin-film magnetic element according to claim 1, wherein the antiferromagnetic layer is stacked in contact with the entire bias layer and the stacked body. 4. The antiferromagnetic layer is formed to be wider than the stacked body in contact with the upper surface of the stacked body, and is stacked so as to be in contact with a part of the pair of bias layers. The spin-valve thin-film magnetic element according to claim 1. 5. The laminated body is formed by sequentially laminating the free magnetic layer, the nonmagnetic conductive layer, the fixed magnetic layer, and an antiferromagnetic thin film, wherein the antiferromagnetic layer is the antiferromagnetic thin film. 5. The spin-valve type thin-film magnetic element according to claim 1, wherein the spin-valve thin-film magnetic element is in contact with a thin film. 6. The spin-valve thin-film magnetic element according to claim 1, wherein a ferromagnetic thin film is provided at least between the stacked body and the antiferromagnetic layer. 7. The method according to claim 1, wherein the antiferromagnetic layer comprises X-Mn (where
X represents one element selected from Pt, Pd, Ru, Ir, Rh, and Os. 7. The spin-valve thin-film magnetic element according to claim 1, wherein X is in the range of 37 at% to 63 at%. 8. The antiferromagnetic layer is made of X′-Pt—Mn.
(Where X 'is Pd, Cr, Ru, Ni, Ir, R
One or more elements selected from h, Os, Au, and Ag are shown. The spin valve according to any one of claims 1 to 6, wherein the total amount of X 'and Pt is in the range of 37 atomic% to 63 atomic%. Type thin film magnetic element. 9. The antiferromagnetic thin film is represented by a formula of X-Mn (where X represents one element selected from Pt, Pd, Ru, Ir, Rh, and Os). 6. The spin-valve thin-film magnetic element according to claim 5, wherein X is in the range of 37 atomic% to 63 atomic%. 10. The antiferromagnetic thin film is made of X′-Pt-M
n (where X ′ is Pd, Cr, Ru, Ni, Ir,
One or more elements selected from Rh, Os, Au, and Ag are shown. 6. The spin-valve thin-film magnetic element according to claim 5, wherein the total amount of X 'and Pt is in the range of 37 at% to 63 at%. 11. The anti-ferromagnetic layer may be stacked in contact with the entire bias layer and the stacked body, and the pair of conductive layers may be stacked on the anti-ferromagnetic layer apart from each other. The spin-valve thin-film magnetic element according to any one of claims 1 to 10, wherein: 12. The antiferromagnetic layer is formed to be wider than the stacked body in contact with an upper surface of the stacked body, and is stacked so as to be in contact with a part of the pair of bias layers. 11. The spin-valve thin-film magnetic element according to claim 1, wherein the spin-valve thin film magnetic element is adjacent to both sides of the antiferromagnetic layer and laminated on the bias layer. 13. An intermediate layer made of Ta or Cr is provided between the bias layer and the conductive layer and / or between the bias layer and the antiferromagnetic layer. The spin-valve thin-film magnetic element according to claim 1. 14. A bias underlayer made of Cr is provided between the bias layer and the multilayer body and between the bias layer and the substrate.
A spin-valve thin-film magnetic element according to claim 12. 15. The non-magnetic intermediate layer, a first free magnetic layer sandwiching the non-magnetic intermediate layer, and a second non-magnetic intermediate layer.
A free magnetic layer, wherein the first free magnetic layer and the second free magnetic layer are antiferromagnetically coupled to each other, so that a magnetization direction of the first free magnetic layer and a magnetization direction of the second free magnetic layer 15. The spin-valve thin-film magnetic element according to claim 1, wherein the spin valves are antiparallel to each other. 16. The fixed magnetic layer includes another non-magnetic intermediate layer, a first fixed magnetic layer and a second fixed magnetic layer sandwiching the another non-magnetic intermediate layer. The second pinned magnetic layer is antiferromagnetically coupled to each other, and a magnetization direction of the first pinned magnetic layer and a magnetization direction of the second pinned magnetic layer are antiparallel to each other. A spin-valve thin-film magnetic element according to any one of claims 1 to 14. 17. The slider according to claim 1, further comprising:
A thin-film magnetic head comprising the spin-valve thin-film magnetic element according to any one of the above. 18. A laminated precursor is formed by laminating at least a free magnetic layer, a non-magnetic conductive layer, and a fixed magnetic layer on a substrate, forming a first lift-off resist on the laminated precursor, (1) A laminate is formed by removing the laminate precursor that is not covered with the lift-off resist and exposing the substrate. A bias layer is laminated on the exposed substrate, and the upper surface thereof is formed on the upper surface of the laminate. And removing the first lift-off resist, stacking an antiferromagnetic layer on at least a part of the bias layer and the stack, and contacting the antiferromagnetic layer to form a pair of conductive layers. Forming a spin-valve thin film magnetic element. 19. The laminated precursor in which the free magnetic layer, the nonmagnetic conductive layer, the fixed magnetic layer, and the antiferromagnetic thin film are laminated, and the antiferromagnetic layer is formed of the antiferromagnetic layer 2. The method according to claim 1, wherein the thin film is laminated in contact with the thin film.
9. The method for manufacturing a spin-valve thin-film magnetic element according to item 8. 20. The method according to claim 18, wherein after removing the first lift-off resist, a ferromagnetic thin film is formed on at least the laminate, and the antiferromagnetic layer is laminated on the ferromagnetic thin film. A method for manufacturing a spin-valve type thin-film magnetic element. 21. A second lift-off resist is formed on the anti-ferromagnetic layer, and the pair of conductive layers is stacked on the anti-ferromagnetic layer not covered by the second lift-off resist. 21. The method for manufacturing a spin-valve thin-film magnetic element according to claim 18, wherein the resist is removed. 22. A third lift-off resist is formed on the anti-ferromagnetic layer, the anti-ferromagnetic layer not covered by the third lift-off resist is removed, and the third lift-off resist is formed on both sides of the remaining anti-ferromagnetic layer. 21. The method of manufacturing a spin-valve thin-film magnetic element according to claim 18, wherein a pair of conductive layers are stacked, and the third lift-off resist is removed.