JP2000292822A - Optical module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an optical module on which a general semiconductor optical element such as the semiconductor optical element including a refraction type photodiode and has a projection on its surface and the semiconductor element having no projection on its normal surface can be mounted on a mounting substrate on the same optical axis without increasing the number of manufacturing steps. SOLUTION: This optical module has an optical element mounting substrate 2 where a guide groove 29 for optical fiber fixation is formed, an optical fiber 30 fixed in the guide groove 29, and an optical element mounted on the substrate 2. The optical element includes an optical element which has an active are arranged right above the guide groove 29 and is optically coupled with the optical fiber 30. The optical element has the area including the active area projecting from the surface of the optical element and at least a part of the area including the active area is put in the guide groove 29. This optical element includes a refraction type photodiode 23. A semiconductor optical amplifier and the refraction type photodiode can be stored in the same guide groove 29. A semiconductor light emitting element and the refraction type photodiode can be stored in the same guide groove 29.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an optical module suitable for a transmitting and receiving module having an optical fiber and a semiconductor optical element, and more particularly to a hybrid optical module assembled by a passive alignment method using a marker.

[0002]

2. Description of the Related Art FIG. 1 shows an outline of a conventional module manufacturing method by a passive alignment method using a marker. FIG. 1 is a conceptual diagram of a mounting method including a semiconductor optical device 1 and a mounting substrate 2 thereof. The back surface of the semiconductor optical device 1 is sucked by vacuum tweezers 9 or the like, and is held above the mounting substrate 2. Then, using an infrared microscope or the like, the alignment is performed using the alignment mark 5 on the semiconductor optical element 1 and the alignment mark 7 on the mounting substrate 2, and then the metal 3 for the electrode on the semiconductor optical element 1 is mounted. The heater 11 in the mounting substrate fixing pedestal 10 is brought into contact with the solder 6 on the substrate 2.
To form an alloy and obtain electrical and mechanical coupling. Thereafter, a V-shaped groove (not shown) for fixing an optical fiber, which has been formed on the mounting substrate 2 in advance.
An optical module (not shown) is placed on the optical module, and these are fixed with an adhesive or the like to produce an optical module.

When an optical fiber and a semiconductor photodetector are coupled by such a passive alignment method, a photodetector having a large light receiving surface is effective for efficiently receiving light. However, in general, when the light receiving surface is enlarged, the band becomes narrow, and the sensitivity to high-speed signals deteriorates. Therefore, coupling tolerance with optical fiber (tolerance)
A semiconductor photodetector called a refraction photodiode has been developed as a photodetector with high sensitivity, high sensitivity and a wide band.

FIG. 2 is a sectional view of the refraction photodiode. Here, 12 is a semi-insulating InP substrate, 13 is an n-type InP layer, 14 is an InGaAs light absorbing layer, and 15 is p
Semiconductor layer (InP layer), 16 is a p-type InGaAsP contact layer, 17 is an insulating film (nitride film), 18 is a p-side ohmic electrode, 19 is an n-side ohmic electrode, 20 is a p-side electrode, and 21 is an n-side electrode. , And 22 are antireflection films (antireflection films; light receiving regions). When light enters the inclined light refracting portion 22 from the right direction in FIG. 2, the light is bent downward in FIG. Therefore, the light incident position is changed to the light absorbing layer 1.
If it is set at a position higher than 4, the light will be
Will be reached. In a normal waveguide structure photodetector, light must be directly incident on the light absorption layer,
Although the coupling tolerance is small, this refraction photodiode only needs to allow light to enter above the light absorption layer 14.
Large coupling tolerance. Further, in order to improve the tolerance of the ordinary waveguide structure photodetector, the volume of the light absorbing layer may be increased, but in this case, the traveling time of the carrier generated inside becomes longer, and the high-speed signal Can not respond. On the other hand, the refraction photodiode only needs to have the light absorbing layer 14 only in the portion where the bent light passes, and its thickness may be about 2 μm, which is sufficient to absorb the light. It has the feature of being responsive.

[0005]

However, when the above-described refraction photodiode is mounted on a substrate by the mounting method shown in FIG. 1, the light absorbing portions 14 to 20 protruding from the surface are mounted. In order to hit the surface of the mounting substrate (semiconductor optical element mounting substrate) 2, a groove for accommodating a projection such as a light absorbing portion must be formed on the mounting substrate 2 side in advance. There was a problem to be solved that became complicated.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a semiconductor optical device having a projection on a surface, including a refraction photodiode, and a conventional optical device without increasing the number of manufacturing steps. It is an object of the present invention to provide an optical module capable of mounting all semiconductor optical devices having no projection on the surface on the same optical axis on a mounting substrate.

[0007]

In order to achieve the above object, the present invention is directed to an optical element mounting substrate having at least one guide groove for fixing an optical fiber, and an optical element mounting substrate fixed to the guide groove. One or more optical fibers, and one or more optical elements mounted on the optical element mounting substrate, and the optical element has an active region disposed directly above the guide groove, An optical element for optically coupling with an optical fiber is included.

Here, the optical element in which the active region is disposed right above the guide groove and optically couples with the optical fiber,
The optical device may include a region including the active region protruding from the surface of the optical device, and at least a part of the region including the active region is an optical device housed in the guide groove.

[0009] The optical element may include at least a refraction photodiode.

The semiconductor optical amplifier and the refraction type photodiode as the optical element may be housed in the same guide groove.

Further, the semiconductor light emitting element as the optical element and the refraction type photodiode are housed in the same guide groove.

[0012]

Embodiments of the present invention will be described below in detail with reference to the drawings.

(First Embodiment) An optical module according to a first embodiment of the present invention comprises a combination of a substrate on which a guide groove for fixing an optical fiber is formed, an optical fiber, and a refraction photodiode. You. FIG. 3 shows the basic structure of the optical module. FIG. 3A is a diagram illustrating a cross-sectional structure of a receiving module (optical module) including an optical fiber, a refraction photodiode, and a mounting substrate, and FIG. 3B is a diagram illustrating a surface of the mounting substrate directly above. FIG. FIG. 3C is a view of the surface of the refraction photodiode as viewed from directly above.

As shown in the cross-sectional view of FIG. 2, the refraction type photodiode 23 comprises a semi-insulating InP substrate 12, an n-type InP layer 13, an InGaAs light absorbing layer 14, and a p-type semiconductor layer formed thereon. 15 and has a structure in which the end face is inclined by wet etching using the crystal orientation. Further, as shown in the top view of the refraction photodiode 23 in FIG.
A p-side electrode 20 and an n-side electrode 21 are respectively taken out from the layer, and an alignment mark 5 for passive alignment is formed in a portion where these electrodes and the light absorbing layer are not provided.

An example of a method for manufacturing such a refractive photodiode 23 and the substrate 2 for mounting a semiconductor optical element will be described below.

First, a manufacturing process of the refraction photodiode 23 will be described with reference to FIG.

First, an n-type InP layer 13 is formed on a semi-insulating InP substrate 12 to have a thickness of 1.0 μm and a non-doped InGaAs layer.
When the light absorption layer 14 is 2.0 μm and the non-doped InP layer 15 is
And a non-doped InGaAsP contact layer 16 having a forbidden band width of 1.5 μm corresponding to a wavelength of 1.5 μm are sequentially grown. Thereafter, a nitride film is formed on the entire surface, and the nitride film is etched only at a portion used as a light absorbing layer. Thereafter, zinc is diffused by a diffusion method, and only the portion where the nitride film is etched is made to be p-type. After removing the nitride film, the photoresist is left in an island shape only in a portion to be used as a light absorbing layer, and the n-type InP layer 13 is exposed by etching. Again nitride film 17 on the entire surface
Is formed, and a part of the p-type InGaAsP contact layer 16 and a part of the n-type InP layer 13 above the light absorption layer are exposed.

Next, Ni (10 nm) and Zn are deposited by vapor deposition.
(30 nm) and Au (100 nm) are p-type InGaAs
It is formed on the P contact layer 16. At this time, the alignment mark 5 is formed in a portion where there is no InGaAsP contact layer 16 by the resist pattern formed at the same time. Similarly, AuGe is formed on the n-type InP layer 13.
(100 nm), Ni (20 nm) and Au (500 n)
m). Then, the temperature is raised to 420 ° C. in a hydrogen atmosphere to form a p-side ohmic electrode 18 and an n-side ohmic electrode 19. Further, Ti (50 nm), Pt (100 nm) and A are deposited on the p-side ohmic electrode 18 by vapor deposition.
u (800 nm) is deposited, and a p-side electrode 20 is formed.
Similarly, Ti (50 nm) is formed on the n-side ohmic electrode 19.
And Pt (100 nm) and Au (300 nm),
The n-side electrode 21 is manufactured. Then, the photoresist is left in a portion other than the end surface portion that becomes the light incident portion, and wet etching is performed to form a light refraction portion with an inclination on the end surface. Finally, by cleaving to a size of 500 μm × 350 μm and forming an anti-reflection film 22 on the surface of the light refraction portion,
The refractive photodiode 23 is manufactured.

Next, a manufacturing process of the mounting substrate will be described with reference to FIGS.

First, a 1 μm thick SiO ₂ film (insulating film) 25 is formed by thermally oxidizing the p-type Si substrate 24. Thereafter, a guide groove pattern for fixing the fiber is formed using a photoresist. S by dry etching
After the etching of the iO ₂ film 25, the photoresist is removed, and etching is performed in an aqueous solution of potassium hydroxide to form a V groove 2
9 is formed. Then, an electrode pattern and a pattern for an alignment mark are formed using a photoresist.
Then, Cr (50 nm) and Au (500 n
By depositing m), a current injection electrode 26 and an alignment mark 27 are formed. Further, the current injection electrode 2
6, electrodes 20 and 2 of the refraction photodiode 23
AuSn solder 28 is 2.5 μm
Evaporate. Finally, after removing the photoresist, a mounting substrate 2 having a size of 3 mm × 7 mm is manufactured using a dicing saw.

Using the refraction photodiode 23 and the mounting substrate 2 manufactured as described above, mounting is performed as follows.

First, the mounting substrate 2 is fixed to a pedestal 10 having a heater 11 (see FIG. 1). Next, the refraction photodiode 23 is placed so that the p side faces downward, and the semi-insulating substrate 12 side is sucked by the vacuum tweezers 9 (see FIG. 1). Then, the refraction photodiode 23 is moved onto the mounting substrate 2, and the refraction photodiode 2 is
The alignment is performed while viewing the alignment mark 5 on the alignment mark 3 and the alignment mark 27 on the mounting substrate 2. Thereafter, as shown in FIG. 3A, the half-refractive photodiode 23 is pressed at 300 ° C. onto the mounting substrate 2.
Thus, the refraction type photodiode 23 and the mounting substrate 2 are bonded to each other. Then, the optical fiber 30 is inserted into the V-groove 29 of the mounting substrate 2, a UV curable resin is poured into a gap in the V-groove 29, and the resin is cured by irradiating UV light (ultraviolet light). The fiber 30 is fixed in the V-groove 29.

When the characteristics of the receiving module manufactured as described above were examined, when the positional deviation between the optical fiber 30 and the refraction type photodiode 23 was ± 15 μm in the horizontal direction, 1 dB degradation in the receiving sensitivity was observed. . Similarly, when the position of the optical fiber 30 and the position of the refraction photodiode 23 are shifted by ± 7 μm in the vertical direction and by 100 μm in the optical axis direction, 1 dB of reception sensitivity degradation was observed.

In this embodiment, the case where the refraction type photodiode 23 is an InP-based light emitting element has been described, but it may be a GaAs-based or II-VI semiconductor. further,
In the present embodiment, the Si substrate is used as the mounting substrate 2, but it goes without saying that an insulator such as ceramic, glass, plastic, or a metal may be used. The electrodes 20 and 21 on the semiconductor optical device side are Ti / Pt /
Although Au was used and Cr / Au was used for the electrode 26 on the mounting substrate side, a combination of these metals and other materials may be used, or a metal such as Ni may be used to improve the adhesion. In this embodiment, the SiO ₂ film 25 on the mounting substrate is manufactured by thermal oxidation, but may be manufactured by a sputtering method, a plasma CVD method, or the like. Further, the guide groove 29 for fixing the optical fiber was formed by wet etching.
It may be formed by machining by dicing, and the shape may be not only V-shaped but also rectangular or semi-circular. When an insulator or metal such as ceramic, glass, or plastic is used as the mounting substrate, a guide groove for fixing the optical fiber may be formed by molding using a mold.

(Second Embodiment) FIG. 4 shows the configuration of an optical module according to a second embodiment of the present invention. The optical module according to the second embodiment of the present invention includes a substrate having a guide groove for fixing an optical fiber, an optical fiber, a combination of a semiconductor optical amplifier and a refraction photodiode. FIG. 4A is a diagram showing a cross-sectional structure of a receiving module including an optical fiber, a semiconductor optical amplifier, a refraction photodiode, and a mounting substrate, and FIG. 4B is a diagram showing the mounting substrate surface from directly above. FIG. 4C is a diagram in which the surface of the semiconductor optical amplifier is viewed from directly above.

As shown in FIG. 4A, the semiconductor optical amplifier 45 comprises an n-type InP substrate 31, an InGaAsP active layer 32 formed thereon, a p-type InP cladding layer and a p-type InGaAsP contact layer. And a p-type semiconductor layer 33 composed of Further, on both sides of the InGaAsP active layer 32, vertical tapered spot size conversion regions 34 are integrated. In a section perpendicular to this, a current confinement layer is formed around the InGaAsP active layer 32. p-type InGaAsP of the p-type semiconductor layer 33
A p-side electrode 35 is formed on the contact layer, and n-type In
On the P substrate 31, an n-side electrode 36 is formed. The semiconductor optical amplifier 45 is joined to the mounting substrate 2 by solder 28. Alignment marks 37 for alignment are formed on portions of the surface of the semiconductor optical amplifier 45 which are not covered by the p-side electrode 35. Reference numeral 40 denotes a dummy electrode for supporting the element. On the other hand, a V-groove 29 for fixing an optical fiber, an electrode 26 for current injection, a solder 28 for bonding for mounting a semiconductor optical element, and an alignment mark 39 for a semiconductor optical amplifier are formed on the surface of the substrate 2 for mounting a semiconductor optical element. ing.

An example of a method for manufacturing the semiconductor optical amplifier 45 and the semiconductor optical element mounting substrate 2 as described above will be described below.

First, a manufacturing process of the semiconductor optical amplifier 45 will be described with reference to FIGS.

First, a non-doped InG substrate having a forbidden bandwidth corresponding to a wavelength of 1.55 μm is formed on an n-type InP substrate 31.
The thickness of the aAsP active layer 32 is 0.5 μm and the p-type InP layer 33 is
Is grown 0.1 μm. Thereafter, a SiO ₂ film is deposited on the surface, and a resist pattern having a length of 600 μm corresponding to the length of the light emitting region is formed. The SiO ₂ film and the semiconductor are etched using the photoresist as a mask. After removing the photoresist, InGaAsP is grown to grow InG.
Vertically tapered spot size conversion regions 34 are integrated on both sides of the aAsP active layer 32. After removing the SiO ₂ film, a SiO ₂ film is deposited again on the entire surface. A stripe having a width of 0.5 μm is formed thereon with a photoresist, and the SiO ₂ film and the semiconductor are etched. After removing the resist, p-In
A P layer 33 and an n-InP layer 31 are grown, and
The periphery of the aAsP active layer 32 is buried. After removing the SiO ₂ film, the p-InP layer 33 is 1.5 μm and 0.3 μm on the entire surface.
By growing the m-type p-type InGaAsP layers 32 in order, the p-type semiconductor layer 33 is formed, and the embedded structure is completed.

Then, after removing the 1 nGaAsP contact layer above the spot size conversion region 34, an SiO ₂ film is deposited on the entire surface, and then the SiO ₂ film is etched only on the active layer. Next, Ni (10 nm) is deposited by vapor deposition.
And Zn (30 nm) and Au (100 nm) with InGaAs
It is formed on the sP contact layer and near the end face. At this time, the alignment marks 37 are simultaneously formed by lift-off using a photoresist. Then, the n-type InP substrate 31 side is polished to a thickness of about 100 μm, and then AuGe (1) is deposited on the n-type InP substrate 31 side by vapor deposition.
00 nm), Ni (20 nm), and Au (500 nm). At this time, the spot size conversion region 34 is protected with a photoresist so that the electrode metal is not attached. After removal of the photoresist, 420
℃ and further p-side and n-side
(50 nm), Pt (100 nm) and Au (800 n)
m) is deposited, and a p-side electrode 35 and an n-side electrode 36 are formed. Finally, the semiconductor optical amplifier 45 is manufactured by cleaving to a size of 500 μm in width and 1200 μm in length, and depositing an antireflection film 38 on both end surfaces by an electron beam evaporator.

The method of manufacturing the mounting substrate 2 is the same as that of the first embodiment of the present invention.

The semiconductor optical amplifier 45 manufactured as described above is positioned so that the alignment marks 37 and 39 coincide with each other, and mounted on the mounting substrate 2 as in the first embodiment. After that, the refraction photodiode 23 is aligned so that the alignment marks 5 and 27 are aligned, and is mounted on the mounting substrate 2. Finally, the optical fiber 30 is inserted into the V-groove 29, and the optical fiber 30 is fixed to the V-groove 29 using a UV curable resin.

When the characteristics of the receiving module manufactured as described above were examined, when the positional deviation between the optical fiber 30 and the semiconductor optical amplifier 45 was ± 2 μm in the horizontal direction, 1 dB degradation in the receiving sensitivity was observed. Similarly, the optical fiber 3
0 and the position of the semiconductor optical amplifier 45 are ± 1.5 in the vertical direction.
When the wavelength was shifted by 10 μm in the optical axis direction by 1 μm, the reception sensitivity degradation of 1 dB was observed. When a current of 70 mA flows through the semiconductor optical amplifier 45, a 2.5 Gbps signal is
The receiving sensitivity is -3 when the bit error rate is 10 ^-10
It was 0.5 dBm.

(Third Embodiment) As shown in FIG. 5, an optical module according to a third embodiment of the present invention comprises a substrate having a guide groove for fixing an optical fiber, an optical fiber, and a semiconductor laser. (Semiconductor light-emitting element) and a refraction photodiode. FIG. 5A is a diagram illustrating a cross-sectional structure of a transmission module including an optical fiber, a semiconductor laser, a refraction photodiode, and a mounting substrate. FIG. FIG. 5C is a diagram in which the surface of the semiconductor laser is viewed from directly above.

An example of a method for manufacturing the optical module according to the present embodiment will be described below.

The refraction type photodiode 23 is manufactured in the same manner as in the first embodiment of the present invention.

The semiconductor laser 46 is manufactured in the same process as the method of manufacturing the semiconductor optical amplifier 45 according to the second embodiment of the present invention, and has a half size before the anti-reflection film is formed on the end face. It is produced by making the reflectance of the film (dielectric film) 41 formed on both end surfaces to be 30% or more in geometric mean.

The semiconductor optical laser 46 manufactured in this manner is connected to the alignment mark 42 of the semiconductor laser 46 and the mounting substrate 2 in the same manner as in the above-described second embodiment of the present invention.
The semiconductor laser 46 is mounted on the mounting substrate 2 so that the alignment mark 43 coincides with the alignment mark 43. Thereafter, the refraction photodiode 23 is aligned so that the alignment marks 5 and 27 are aligned, and the refraction photodiode 23 is mounted on the mounting substrate 2. Finally, the optical fiber 30 is inserted into the V-groove 29, and the optical fiber 30 is fixed to the V-groove 29 using a UV curable resin.

When the characteristics of the transmission module manufactured as described above were examined, the optical fiber 30 and the semiconductor laser 4
When the position shift of No. 6 was ± 2 μm in the horizontal direction, a degradation of 1 dB in the coupling efficiency was observed. Similarly, the optical fiber 30
± 1.5 μ in the vertical direction
The coupling efficiency was degraded by 1 dB when the wavelength was shifted by 10 μm in the optical axis direction. Also, the output of the semiconductor laser 46 was monitored by the refraction photodiode 23, and by applying an electrical feedback corresponding to the output to the semiconductor laser 46, a constant optical output from the optical fiber 30 could be obtained.

(Other Embodiments) In each of the above embodiments of the present invention, the case where the number of the guide grooves for fixing the optical fiber formed in the substrate for mounting the semiconductor optical element is one is exemplified. The invention is not limited thereto, and includes a case where a plurality of optical fiber fixing guide grooves are formed in the semiconductor optical element mounting substrate.

[0041]

As described above, according to the present invention,
An optical element mounting substrate having one or more optical fiber fixing guide grooves formed therein, one or more optical fibers fixed in the guide grooves, and one or more optical elements mounted on the optical element mounting substrate The optical element includes an optical element in which an active region is disposed immediately above the guide groove and optically couples with an optical fiber. Therefore, the optical element can be refracted without increasing the number of manufacturing steps. A semiconductor optical device having a projection on its surface and a general semiconductor optical device having no projection on its surface, including a type photodiode, can be mounted on the mounting substrate on the same optical axis.

Further, according to the present invention, a refraction type photodiode having a large position tolerance can be mounted on an optical element mounting substrate without increasing the number of manufacturing steps, so that a passive alignment method using alignment marks becomes easy. Module manufacturing costs can be significantly reduced.

[Brief description of the drawings]

FIG. 1 is a diagram showing a conventional mounting method, and is a conceptual diagram showing a cross-sectional structure of an optical module and a mounting substrate.

FIG. 2 is a conceptual diagram illustrating a configuration of a refraction photodiode.

FIG. 3 is a conceptual diagram showing a configuration of an optical module according to a first embodiment of the present invention, where (a) is a cross-sectional view of the optical module,
(B) is a top view showing the configuration of the surface of the mounting substrate,
(C) is a top view showing the configuration of the surface of the refraction photodiode.

FIG. 4 is a conceptual diagram illustrating a configuration of an optical module according to a second embodiment of the present invention, where (a) is a cross-sectional view of the optical module,
(B) is a top view showing the configuration of the surface of the mounting substrate,
(C) is a top view showing the configuration of the surface of the semiconductor optical amplifier.

FIG. 5 is a conceptual diagram showing a configuration of an optical module according to a third embodiment of the present invention, where (a) is a cross-sectional view of the optical module,
(B) is a top view showing the configuration of the surface of the mounting substrate,
(C) is a top view showing the configuration of the surface of the semiconductor laser.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Semiconductor optical element 2 Semiconductor optical element mounting substrate 3 Metal for electrodes, 4 Metal for electrodes 5 Alignment mark 6 Solder, 7 Alignment mark 8 Metal for electrode 9 Vacuum tweezers 10 Mounting base fixing base 11 Heater 12 Semi-insulating property InP substrate 13 n-type InP layer 14 InGaAs light absorption layer 15 p-type semiconductor layer (InP layer) 16 p-type InGaAsP contact layer 17 insulating film (nitride film) 18 p-side ohmic electrode 19 n-side ohmic electrode 20 p-side electrode (Ti / Pt / Au electrode) 21 n-side electrode (Ti / Pt / Au electrode) 22 Anti-reflection film 23 Refractive photodiode 24 Si substrate 25 Insulating film (SiO ₂ film) 26 Current injection electrode (Cr / Au electrode) 27 Alignment mark 28 Solder 29 Optical fiber fixing guide groove (V groove) 30 Optical fiber Fiber 31 n-type InP substrate 32 InGaAsP active layer 33 p-type semiconductor layer 34 spot size conversion area 35 p-side electrode 36 n-side electrode 37 alignment mark 38 antireflection film 39 alignment mark 40 element supporting dummy electrode 41 dielectric film 42 alignment Mark 43 alignment mark 45 semiconductor optical amplifier 46 semiconductor laser

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2H037 AA01 BA02 BA11 DA03 DA04 DA06 DA12 DA17 DA38 5F073 AA83 AA86 AA87 AA89 AB22 AB28 FA07 FA13 FA23 5F088 AA03 AB07 BA16 BB01 DA01 DA17 EA07 EA09 GA05 GA07 GA03 JA03 JA03

Claims (5)

[Claims] 1. An optical element mounting substrate having at least one guide groove for fixing an optical fiber, at least one optical fiber fixed to the guide groove, and an optical fiber mounted on the optical element mounting substrate. And at least one optical element, wherein the optical element includes an optical element in which an active region is disposed right above the guide groove and optically couples with the optical fiber. Optical module. 2. An optical element in which the active region is disposed right above the guide groove and optically couples with the optical fiber has a region including the active region protruding from a surface of the optical device,
The optical module according to claim 1, wherein at least a part of a region including the active region is an optical element housed in the guide groove. 3. The optical module according to claim 2, wherein the optical element includes at least a refraction photodiode. 4. The optical module according to claim 2, wherein the semiconductor optical amplifier as the optical element and the refraction photodiode are housed in the same guide groove. 5. The optical module according to claim 2, wherein a semiconductor light emitting element as the optical element and a refraction photodiode are housed in the same guide groove.