JP2000286103A - Electrode of high-temperature ptc ceramics and method of producing the same - Google Patents
Electrode of high-temperature ptc ceramics and method of producing the sameInfo
- Publication number
- JP2000286103A JP2000286103A JP8817999A JP8817999A JP2000286103A JP 2000286103 A JP2000286103 A JP 2000286103A JP 8817999 A JP8817999 A JP 8817999A JP 8817999 A JP8817999 A JP 8817999A JP 2000286103 A JP2000286103 A JP 2000286103A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- ptc
- ptc ceramics
- temperature
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Thermistors And Varistors (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、特に300℃以上の高温
で使用されるPTCセラミックスの電極とその製造方法に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a PTC ceramic electrode used at a high temperature of 300 DEG C. or more, and a method for producing the same.
【0002】[0002]
【従来の技術】従来から、PTCセラミックスの電極構成
としてはAgにガラス成分を添加し、ペースト状にして印
刷を施し、乾燥後、焼成、いわゆる焼き付けを行い、電
極を構成する物。また、Ni等の金属をメッキで熱処理
後、不要部の電極を研削するやり方等がある。さらに特
開昭59−111290号や特開平4−133403号には溶射を施す
といったやり方が示されている。2. Description of the Related Art Conventionally, a PTC ceramic electrode is formed by adding a glass component to Ag, printing it in a paste form, drying it, and then baking it, so-called baking, to form an electrode. Further, there is a method in which a metal such as Ni is heat-treated by plating, and then an unnecessary portion of the electrode is ground. Further, Japanese Patent Application Laid-Open Nos. 59-111290 and 4-133403 disclose methods of spraying.
【0003】[0003]
【発明が解決しようとする課題】しかしながら、従来の
方法によると、300℃以上の環境下で使用する場合にお
いては以下のような問題が生じる。焼き付けを行う方法
では、PTCセラミックスの使用環境温度が高いため、電
極層に含まれるガラスが移動し、電極が安定しないとい
った問題点があった。一方、Ni等の金属をメッキで熱処
理後、不要部の電極を研削するやり方では使用環境温度
が高温下であり、表面の金属が耐熱性に乏しく、表面の
酸化が進み、見掛け上の抵抗値が上昇し、最後には絶縁
体になってしまうといったことがあった。また、溶射に
よる電極形成方法では、昇温時の高温環境と室温環境で
は温度差が大きく、そのため母体と電極間に応力が発生
し、長期的に使用に耐えないことがあった。ところで、
高温即ち高キュリー点を有するPTCセラミックスは材料
に多く含まれるPbが焼成時に蒸発し、開気孔はもちろ
ん、閉気孔も多く形成される。更に焼結時においてこれ
らは蒸発したPb化合物によって封孔され、保護して焼結
体の特性を安定させる役目を果たす。従って、焼成後に
おいて焼結体に加工を施すことで、特性の劣化が生じる
ことがあった。However, according to the conventional method, the following problems occur when used in an environment of 300 ° C. or higher. In the method of baking, there is a problem that the glass contained in the electrode layer moves due to the high use environment temperature of the PTC ceramics, and the electrode becomes unstable. On the other hand, in the method of grinding unnecessary electrodes after heat-treating metals such as Ni by plating, the operating environment temperature is high, the metal on the surface has poor heat resistance, oxidation of the surface progresses, and the apparent resistance value Rises and eventually becomes an insulator. Further, in the electrode forming method by thermal spraying, there is a large temperature difference between the high temperature environment and the room temperature environment when the temperature is raised, so that stress is generated between the base body and the electrode, which may not endure use for a long term. by the way,
In PTC ceramics having a high temperature, that is, a high Curie point, Pb contained in a large amount of the material evaporates at the time of firing, and many closed pores as well as open pores are formed. Further, at the time of sintering, these are sealed by the evaporated Pb compound and serve to protect and stabilize the characteristics of the sintered body. Therefore, when the sintered body is processed after firing, the characteristics may be deteriorated.
【0004】[0004]
【課題を解決するための手段】この目的を達成するため
に本発明は焼結上がり面に対して溶射によって電極を形
成し、電極形成時にPTCセラミックスを加熱しながら、
行うことで目的を達成することが出来る。In order to achieve this object, the present invention forms an electrode by thermal spraying on a surface after sintering, and heats the PTC ceramic while forming the electrode.
By doing so, the purpose can be achieved.
【0005】[0005]
【発明の実施の形態】請求項1に記載の本発明はキュリ
ー点が300℃以上のPTCセラミックスにアルミニウムまた
はアルミニウム合金を溶射によって形成したもので、高
温でも酸化せず、安定的であり、アンカー効果による電
極層の密着によって接合されており、高温の使用環境下
においてもその密着性は変化することがない。焼結上が
り面の表面状態は溶射による電極を形成し易い状態にな
り、特性的にも安定である。また、PTCセラミックスと
アルミニウムはオーミック特性を示し、PTCセラミック
スの真に近い抵抗値を示す。請求項2に記載の本発明は
電極の形成されるPTCセラミックスの表面粗さが1μm以
上であることで、十分なアンカー効果を得やすい。また
PTCセラミックスのキュリー点が300℃以上で、高温にな
る程材料に多く含まれるPbが焼成時に表面から蒸発し、
表面状態が溶射による電極を形成し易い状態になる。請
求項3に記載の本発明は溶射による電極形成時にPTCセ
ラミックスをキュリー点の±50℃以内に加熱することに
よって、キュリー点付近で使用する状態でも、熱応力に
よる剥離や接触状態の変化による抵抗値の増加が生じな
いうえ、密着性が安定して抵抗値の変化が小さくなる。 実施例 以下、本発明の実施例について図面を用いて説明する。
図1は本発明の第1の実施形態におけるPTCセラミック
スの構造断面図である。図1において1はPTCセラミッ
クス、2a,2bは電極である。 実施例1 まず、チタン酸バリウム鉛を主成分とし、副成分として
微量の稀土類元素等を添加した原料を成形後、焼成して
酸化物半導体であるキュリー点350℃にもつ板状のPTCセ
ラミックスを得た。このPTCセラミックス1の上、下面
全体の焼結上がり面(表面粗さ1〜1.5μm)上にア
ルミニウムを主とした電極をプラズマ溶射で形成した。
得られたPTCセラミックスを20min ON-40min OFFの断続
試験を行い、抵抗変化を測定した。5000時間経過後の抵
抗変化率は15%であった。抵抗変化率が20%より大き
いと特性の急激な低下があり耐久性に問題があるが、本
発明のPTCセラミックスはこれより小さいので高温でも
使用できることがわかった。BEST MODE FOR CARRYING OUT THE INVENTION The present invention according to claim 1 is formed by spraying aluminum or an aluminum alloy on PTC ceramics having a Curie point of 300 ° C. or higher by thermal spraying. The electrodes are joined by the adhesion of the electrode layers due to the effect, and the adhesion does not change even in a high-temperature use environment. The surface condition of the surface after sintering is such that an electrode is easily formed by thermal spraying and is stable in characteristics. In addition, PTC ceramics and aluminum exhibit ohmic characteristics and exhibit a resistance value close to that of PTC ceramics. According to the second aspect of the present invention, when the surface roughness of the PTC ceramic on which the electrodes are formed is 1 μm or more, a sufficient anchor effect can be easily obtained. Also
When the Curie point of PTC ceramics is 300 ° C or higher, the higher the temperature, the more Pb contained in the material evaporates from the surface during firing,
The surface state becomes a state in which an electrode is easily formed by thermal spraying. According to the present invention, the PTC ceramic is heated to within ± 50 ° C. of the Curie point at the time of forming the electrode by thermal spraying, so that even when the PTC ceramic is used near the Curie point, the resistance due to the peeling due to thermal stress and the change in the contact state. The value does not increase, the adhesion is stable, and the change in the resistance value is small. Examples Hereinafter, examples of the present invention will be described with reference to the drawings.
FIG. 1 is a structural sectional view of a PTC ceramic according to the first embodiment of the present invention. In FIG. 1, 1 is a PTC ceramic, and 2a and 2b are electrodes. Example 1 First, a plate-like PTC ceramic having a Curie point of 350 ° C., which is an oxide semiconductor, was formed by molding a raw material containing barium lead titanate as a main component and a trace amount of a rare earth element or the like as an auxiliary component. I got An electrode mainly composed of aluminum was formed by plasma spraying on the sintered surface (surface roughness: 1 to 1.5 μm) of the entire lower surface of the PTC ceramic 1.
The obtained PTC ceramics was subjected to an intermittent test of 20 min ON-40 min OFF, and the resistance change was measured. After 5000 hours, the resistance change rate was 15%. If the rate of change in resistance is greater than 20%, the characteristics are sharply reduced and there is a problem in durability. However, since the PTC ceramics of the present invention is smaller than this, it was found that they can be used even at high temperatures.
【0006】比較例1 実施例1と同様に作成したPTCセラミックス表面を鏡面
(表面粗さ0.01μm以下)に研磨した後、実施例1
と同様の試験を行った。5000時間経過後の抵抗変化率は
25%であった。その他、PTCセラミックス表面粗さが1μ
mより小さいものについても同様の結果となった。抵抗
変化率が20%より大きいので耐久性に問題があり、本
発明のようにPTCセラミックスの表面の粗さを1 μm以
上とする必要があることがわかる。 実施例2 実施例1と同様に作成したPTCセラミックス素子1の
上、下面全体にアルミニウムを主とした電極をプラズマ
溶射で形成する際、350℃に加熱しながら、実施例1と
同様の試験を行った。5000時間経過後の抵抗変化率は2
%であった。その他、電極をプラズマ溶射で形成する際P
TCセラミックスのキュリー点(350℃)の±50℃以内
に加熱しても同様の結果となった。本発明のPTCセラミ
ックス素子は電極形成時にPTCセラミックスのキュリー
点の±50℃以内に加熱するので高温で使用しても抵抗変
化率が小さく耐久性があることがわかる。また、溶射の
方法にはフレーム溶射、アーク溶射、プラズマ溶射等が
あり、操作性、機能性等からプラズマ溶射が本方法には
適している。さらに、焼結体の表面粗さが小さいときに
は、熱処理によって表面を粗した後、溶射を施す方法も
考えられる。Comparative Example 1 A PTC ceramics surface prepared in the same manner as in Example 1 was polished to a mirror surface (with a surface roughness of 0.01 μm or less).
The same test was performed. After 5000 hours, the resistance change rate is
25%. In addition, PTC ceramic surface roughness is 1μ
Similar results were obtained for those smaller than m. Since the rate of change in resistance is larger than 20%, there is a problem in durability, and it is understood that the surface roughness of the PTC ceramic needs to be 1 μm or more as in the present invention. Example 2 When forming an electrode mainly composed of aluminum on the entire upper and lower surfaces of the PTC ceramic element 1 prepared in the same manner as in Example 1 by plasma spraying, the same test as in Example 1 was performed while heating to 350 ° C. went. After 5000 hours, the resistance change rate is 2
%Met. In addition, when forming electrodes by plasma spraying,
Similar results were obtained even when heating was performed within ± 50 ° C of the Curie point (350 ° C) of TC ceramics. Since the PTC ceramic element of the present invention is heated to within ± 50 ° C. of the Curie point of the PTC ceramic at the time of forming the electrode, it can be seen that the resistance change rate is small even when used at a high temperature and has durability. The thermal spraying method includes flame spraying, arc thermal spraying, plasma thermal spraying and the like, and plasma thermal spraying is suitable for the present method because of its operability and functionality. Further, when the surface roughness of the sintered body is small, a method of performing thermal spraying after roughening the surface by heat treatment may be considered.
【0007】[0007]
【発明の効果】本発明によると、長時間300℃以上の高
温使用下においても、安定した特性を有するPTCセラミ
ックスを得ることができる。According to the present invention, it is possible to obtain PTC ceramics having stable characteristics even when used at a high temperature of 300 ° C. or more for a long time.
【図1】図1は本発明のPTCサーミスタの構造断面図を
示す。FIG. 1 is a structural sectional view of a PTC thermistor of the present invention.
1 PTCセラミックス 2a,2b 電極 1 PTC ceramics 2a, 2b electrode
Claims (3)
おいて、電極材質がアルミニウムまたはアルミニウム合
金からなり、焼結上がり面に溶射によって形成されたも
のであることを特徴とする高温PTCセラミックスの電
極。1. An electrode of high-temperature PTC ceramics having a Curie point of 300 ° C. or higher, wherein the electrode material is made of aluminum or an aluminum alloy and formed by spraying on a sintered surface.
粗さは1 μm以上であることを特徴とする請求項1に記
載の高温PTCセラミックスの電極。2. The high-temperature PTC ceramic electrode according to claim 1, wherein the surface roughness of the PTC ceramic on which the electrode is formed is 1 μm or more.
おいて、電極材質がアルミニウムまたはアルミニウム合
金からなり、焼結上がり面に溶射によって形成された高
温PTCセラミックスの電極の溶射による電極形成時にPTC
セラミックスをキュリー点の±50℃以内に加熱すること
を特徴とする高温PTCセラミックスの電極の製造方法。3. A PTC ceramic having a Curie point of 300 ° C. or higher, wherein the electrode material is made of aluminum or an aluminum alloy, and the PTC is formed by thermal spraying of an electrode of a high-temperature PTC ceramic formed on a sintered surface by thermal spraying.
A method for manufacturing a high-temperature PTC ceramic electrode, comprising heating the ceramic to within ± 50 ° C of the Curie point.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8817999A JP2000286103A (en) | 1999-03-30 | 1999-03-30 | Electrode of high-temperature ptc ceramics and method of producing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8817999A JP2000286103A (en) | 1999-03-30 | 1999-03-30 | Electrode of high-temperature ptc ceramics and method of producing the same |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2000286103A true JP2000286103A (en) | 2000-10-13 |
Family
ID=13935692
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8817999A Withdrawn JP2000286103A (en) | 1999-03-30 | 1999-03-30 | Electrode of high-temperature ptc ceramics and method of producing the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2000286103A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020087549A (en) * | 2018-11-19 | 2020-06-04 | ニチコン株式会社 | Heater unit and manufacturing method of the same |
-
1999
- 1999-03-30 JP JP8817999A patent/JP2000286103A/en not_active Withdrawn
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020087549A (en) * | 2018-11-19 | 2020-06-04 | ニチコン株式会社 | Heater unit and manufacturing method of the same |
JP7061553B2 (en) | 2018-11-19 | 2022-04-28 | ニチコン株式会社 | Heater unit and its manufacturing method |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4879929B2 (en) | Electrostatic chuck and manufacturing method thereof | |
JP2001196152A (en) | Ceramics heater | |
JP6446155B1 (en) | Double-sided circuit non-oxide ceramic substrate and manufacturing method thereof | |
WO2016031951A1 (en) | Heater | |
JP2000286103A (en) | Electrode of high-temperature ptc ceramics and method of producing the same | |
JP2004259610A (en) | Ceramic heater, manufacturing method thereof, and glow plug | |
JPH01289089A (en) | Ceramics heating body | |
JPWO2006095709A1 (en) | Thin film heating element | |
JP2537606B2 (en) | Ceramic Heater | |
JP2001332525A (en) | Ceramic heater | |
JP4044244B2 (en) | Silicon nitride ceramic heater | |
KR20200142319A (en) | The surface heater and the manufacturing method for the same | |
JPH10255959A (en) | Glow plug ceramic heating element | |
KR102280244B1 (en) | Plane-type heating element, preparation method thereof and heater comprising same | |
JP4034390B2 (en) | Protective film regeneration method for molybdenum disilicide heating elements | |
JP2001043960A (en) | Silicon nitride ceramic heater | |
JPH08321404A (en) | Batio3-based thermistor and its production | |
JP4199604B2 (en) | Aluminum nitride ceramic heater | |
JPS63136485A (en) | Ceramic heater | |
JP2000277239A (en) | Ceramic heater | |
JP3813685B2 (en) | Ceramic heater | |
JP2002299015A (en) | Ceramic heater | |
JP2000286045A (en) | Ceramic heater | |
JPH03138885A (en) | Silicon carbide-boride heating element and manufacture thereof | |
JPH10209582A (en) | Manufacture of ceramic substrate and ceramic circuit substrate |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20060606 |