JP2000285736A - Electrode substrate - Google Patents
Electrode substrateInfo
- Publication number
- JP2000285736A JP2000285736A JP11090502A JP9050299A JP2000285736A JP 2000285736 A JP2000285736 A JP 2000285736A JP 11090502 A JP11090502 A JP 11090502A JP 9050299 A JP9050299 A JP 9050299A JP 2000285736 A JP2000285736 A JP 2000285736A
- Authority
- JP
- Japan
- Prior art keywords
- conductive layer
- grain boundaries
- transparent
- film
- transparent electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Liquid Crystal (AREA)
- Non-Insulated Conductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、液晶表示素子な
どの薄型表示デバイスに用いられる電極基板に関する。The present invention relates to an electrode substrate used for a thin display device such as a liquid crystal display device.
【０００２】[0002]
【従来の技術】従来、液晶表示素子においては、一対の
透明なフィルム基板の対向面にそれぞれ複数の透明電極
を形成するとともに、これら透明電極を覆って配向膜を
形成し、これら配向膜にそれぞれラビング処理などの配
向処理を施した上、各透明電極を対向させた状態で、フ
ィルム基板間に液晶をシール材で囲んで封入し、この状
態で対向する透明電極間に電界を選択的に印加すること
により、情報を表示するように構成されている。このよ
うな液晶表示素子のフィルム基板に形成される透明電極
は、その素材として、例えば、インジウム合金（ＩＴ
Ｍ）、あるいは酸化インジウムの金属酸化物（ＩＴＯ）
などの２種類があり、いずれも真空蒸着、スパッタリン
グ、イオンプレーティングなどの方法により成膜され、
フォトリソグラフィ法により所定形状に形成されてい
る。2. Description of the Related Art Conventionally, in a liquid crystal display device, a plurality of transparent electrodes are formed on opposing surfaces of a pair of transparent film substrates, and an alignment film is formed to cover these transparent electrodes. After performing an alignment treatment such as rubbing treatment, with each transparent electrode facing each other, enclose the liquid crystal between the film substrates with a sealing material and seal it, and selectively apply an electric field between the transparent electrodes facing each other in this state By doing so, the information is displayed. A transparent electrode formed on a film substrate of such a liquid crystal display element is made of, for example, an indium alloy (IT
M) or metal oxide of indium oxide (ITO)
There are two types such as vacuum deposition, sputtering, ion plating, etc.
It is formed in a predetermined shape by a photolithography method.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、このよ
うな透明電極のうち、前者のインジウム合金（ＩＴＭ）
で成膜された透明電極では、成膜された状態で粒子が粗
く粒界が多く存在することにより、弾性係数が大きく、
曲げなどの応力を吸収できるため、可撓性を有するフィ
ルム基板に適しているが、粒子が粗大であるため表面に
凹凸が多く、ラビング処理などの配向処理工程で傷付き
やすく、断線の原因になりやすいばかりか、粒界が多く
存在するため電気抵抗が高いという問題がある。また、
後者の酸化インジウムの金属酸化物（ＩＴＯ）で成膜さ
れた透明電極では、成膜された状態で粒子が微細であ
り、緻密で粒界が少なく表面が平坦であるから、ラビン
グ処理などの配向処理工程で傷付きにくく、耐擦傷性に
優れ、かつ粒界が少ないので電気抵抗が低いが、逆に粒
界が少ないことにより弾性係数が小さく、曲げなどの応
力に弱く、亀裂や割れなどが生じやすく、断線しやすと
いう問題がある。However, among such transparent electrodes, the former indium alloy (ITM)
In the transparent electrode formed in the above, the elastic coefficient is large due to coarse particles and many grain boundaries in the film formed state,
It is suitable for flexible film substrates because it can absorb stresses such as bending.However, since the particles are coarse, there are many irregularities on the surface. There is a problem that the electric resistance is high due to the existence of many grain boundaries as well as the tendency to be easily formed. Also,
In the latter case, the transparent electrode formed of indium oxide metal oxide (ITO) has fine particles in a film-formed state, is dense, has few grain boundaries, and has a flat surface. Resistant to scratches in the treatment process, excellent in scratch resistance, and low in electrical resistance due to small number of grain boundaries, but conversely due to the small number of grain boundaries, elastic modulus is small, weak to stress such as bending, cracks and cracks, etc. There is a problem that it is easy to occur and disconnection is easy.
【０００４】この発明の課題は、耐擦傷性および耐屈曲
性に優れ、断線しにくい透明電極を得ることである。[0004] It is an object of the present invention to provide a transparent electrode which is excellent in scratch resistance and bending resistance and is hardly disconnected.
【０００５】[0005]
【課題を解決するための手段】この発明は、可撓性を有
する基板に透明電極が形成された電極基板において、前
記透明電極が、前記基板上に粗大な粒子で形成された透
明な第１導電層と、この第１導電層上に粒径が前記第１
導電層の粒径よりも小さい粒子で形成された透明な第２
導電層との２層構造に形成されていることを特徴とす
る。この発明によれば、基板上に形成された第１導電層
が粗大な粒子で形成されていることにより、粒界が多く
存在し、これにより弾性係数が大きくなり、曲げなどの
応力を吸収することができ、また第１導電層上に形成さ
れた第２導電層が第１導電層の粒径よりも小さい粒子で
形成されていることにより、第１導電層よりも緻密で粒
界が少なく、表面が平坦であるから、耐擦傷性に優れ、
かつ粒界が少ないので電気抵抗が低く、しかも粒界が少
ないことにより第２導電層の弾性係数が小さくなるが、
第１導電層の弾性係数が大きいので、曲げなどの応力に
より第２導電層に亀裂や割れなどが生じても、第１導電
層が曲げなどの応力を吸収して破損することがないの
で、透明電極の断線を防ぐことができ、これにより耐擦
傷性および耐屈曲性に優れ、断線しにくい透明電極を得
ることができる。According to the present invention, there is provided an electrode substrate in which a transparent electrode is formed on a flexible substrate, wherein the transparent electrode comprises a transparent first electrode formed of coarse particles on the substrate. A conductive layer, and the first conductive layer having a particle size of the first
A transparent second layer made of particles smaller than the particle size of the conductive layer
It is characterized by being formed in a two-layer structure with a conductive layer. According to the present invention, since the first conductive layer formed on the substrate is formed of coarse particles, a large number of grain boundaries exist, thereby increasing the elastic modulus and absorbing stress such as bending. In addition, since the second conductive layer formed on the first conductive layer is formed of particles smaller than the particle size of the first conductive layer, the second conductive layer is denser and has fewer grain boundaries than the first conductive layer. , Because the surface is flat, excellent scratch resistance,
Further, since the number of grain boundaries is small, the electric resistance is low, and the elastic coefficient of the second conductive layer is small due to the small number of grain boundaries.
Since the elastic modulus of the first conductive layer is large, even if a crack or a crack occurs in the second conductive layer due to stress such as bending, the first conductive layer does not absorb the stress such as bending and is not damaged. Disconnection of the transparent electrode can be prevented, whereby a transparent electrode which is excellent in scratch resistance and bending resistance and hard to be disconnected can be obtained.
【０００６】この場合、請求項２に記載のごとく、第１
導電層がインジウム合金で形成されていることにより、
粒子が粗く粒界が多く存在することになり、これにより
弾性係数が大きく、耐屈曲性に優れ、また第２導電層が
酸化インジウムの金属酸化物で形成されていることによ
り、第１導電層よりも粒子が微細であり、緻密で粒界が
少なく、表面が平坦であるから、耐擦傷性に優れ、かつ
粒界が少ないので電気抵抗が低くなり、これにより請求
項１記載の発明と同様、耐擦傷性および耐屈曲性に優
れ、断線しにくい透明電極が得られる。また、請求項３
に記載のごとく、第１導電層および第２導電層がそれぞ
れ酸化インジウムの金属酸化物で形成され、第１導電層
がその成膜時に所定の酸素分圧付近以外の状態で成膜さ
れることにより、成膜された状態で粒子が粗大で粒界が
多く存在することになり、これにより弾性係数が大き
く、耐屈曲性に優れ、また第２導電層がその成膜時の所
定の酸素分圧付近の状態で成膜されることにより、成膜
された状態で第１導電層よりも粒子が微細であり、緻密
で粒界が少なく、表面が平坦であるから、耐擦傷性に優
れ、かつ粒界が少ないので電気抵抗が低くなり、これに
より請求項１記載の発明と同様、耐擦傷性および耐屈曲
性に優れ、断線しにくい透明電極が得られる。In this case, as described in claim 2, the first
Because the conductive layer is formed of an indium alloy,
Since the grains are coarse and many grain boundaries are present, the elastic modulus is large, the bending resistance is excellent, and the second conductive layer is formed of a metal oxide of indium oxide. Since the particles are finer, denser and have fewer grain boundaries, and the surface is flatter, they have excellent scratch resistance and have less grain boundaries, resulting in lower electric resistance. A transparent electrode which is excellent in scratch resistance and bending resistance and hardly breaks can be obtained. Claim 3
As described in 1, the first conductive layer and the second conductive layer are each formed of a metal oxide of indium oxide, and the first conductive layer is formed in a state other than the vicinity of a predetermined oxygen partial pressure at the time of forming the first conductive layer. As a result, the particles are coarse and many grain boundaries are present in the film-formed state, whereby the elastic coefficient is large, the bending resistance is excellent, and the second conductive layer has a predetermined oxygen content at the time of film formation. Since the film is formed in a state near the pressure, the particles are finer than the first conductive layer in the formed state, the particles are dense, the number of grain boundaries is small, and the surface is flat. In addition, since the number of grain boundaries is small, the electric resistance is low, thereby obtaining a transparent electrode which is excellent in scratch resistance and bending resistance and hardly breaks, as in the first aspect of the present invention.
【０００７】[0007]
【発明の実施の形態】［第１実施形態］以下、図１およ
び図２を参照して、この発明の電極基板を適用した液晶
表示素子の第１実施形態について説明する。図１は液晶
表示素子の拡大断面図、図２（ａ）および図２（ｂ）は
その電極基板の製造工程を示した各拡大断面図である。
この液晶表示素子は、図１に示すように、上下一対の透
明な電極基板１、２を備えている。下側の電極基板２
は、可撓性を有する透明な合成樹脂からなるフィルム基
板３の上面に帯状の透明電極４が複数配列されていると
ともに、これら複数の透明電極４を覆って配向膜５が形
成された構成になっている。この場合、配向膜５は、そ
の表面にラビング処理などの配向処理が施されている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS [First Embodiment] A first embodiment of a liquid crystal display device to which an electrode substrate according to the present invention is applied will be described below with reference to FIGS. FIG. 1 is an enlarged cross-sectional view of a liquid crystal display element, and FIGS. 2A and 2B are enlarged cross-sectional views showing a manufacturing process of the electrode substrate.
As shown in FIG. 1, the liquid crystal display element includes a pair of upper and lower transparent electrode substrates 1 and 2. Lower electrode substrate 2
Has a configuration in which a plurality of strip-shaped transparent electrodes 4 are arranged on an upper surface of a film substrate 3 made of a flexible transparent synthetic resin, and an alignment film 5 is formed to cover the plurality of transparent electrodes 4. Has become. In this case, the alignment film 5 has its surface subjected to an alignment treatment such as a rubbing treatment.
【０００８】また、上側の電極基板１は、下側の電極基
板２と同様、可撓性を有する透明な合成樹脂からなるフ
ィルム基板６の下面に帯状の透明電極７が下側の電極基
板２の透明電極４と直交するように配列されているとと
もに、これら透明電極７を覆って配向膜８が形成されて
いる。この場合にも、配向膜８は、その表面にラビング
処理などの配向処理が施されている。そして、上下の電
極基板１、２は、透明電極７、４を対向させた状態で、
周縁部がシール材９により接合されている。これら上下
の電極基板１、２間には、液晶１０がスペーサ１１と共
にシール材９で囲われて封入されている。この液晶表示
素子は、上下の電極基板１、２の対向する透明電極７、
４間に選択的に電界を印加することにより、情報を表示
するように構成されている。[0008] Similarly to the lower electrode substrate 2, the upper electrode substrate 1 has a band-shaped transparent electrode 7 on the lower surface of a film substrate 6 made of a flexible transparent synthetic resin. Are arranged so as to be orthogonal to the transparent electrodes 4, and an alignment film 8 is formed so as to cover the transparent electrodes 7. Also in this case, the alignment film 8 is subjected to an alignment process such as a rubbing process on its surface. The upper and lower electrode substrates 1 and 2 have the transparent electrodes 7 and 4 facing each other,
The periphery is joined by a seal material 9. A liquid crystal 10 is enclosed between the upper and lower electrode substrates 1 and 2 together with a spacer 11 by a sealing material 9. This liquid crystal display element comprises transparent electrodes 7 opposed to upper and lower electrode substrates 1 and 2.
It is configured to display information by selectively applying an electric field between the four.
【０００９】ところで、上下の電極基板１、２の透明電
極７、４は、それぞれ、フィルム基板６、３に形成され
た透明な第１導電層１２と、この第１導電層１２上に形
成された透明な第２導電層１３との２層構造に形成され
ている。すなわち、透明電極７、４のうち、下側の電極
基板２の透明電極４の第１導電層１２は、図２（ａ）に
示すように、フィルム基板３上にインジウム−スズなど
のインジウム合金（ＩＴＭ）を真空蒸着、スパッタリン
グ、イオンプレーティングなどの方法により成膜してな
り、この成膜された状態で、粒子が粗く粒界が多く存在
し、かつ電気抵抗が数百Ω程度と高く形成されている。
また、第２導電層１３は、図２（ｂ）に示すように、第
１導電層１２上に酸化インジウム、または少量の酸化ス
ズを添加した酸化インジウムの金属酸化物（ＩＴＯ）を
真空蒸着、スパッタリング、イオンプレーティングなど
の方法により成膜してなり、この成膜された状態で、粒
子が第１導電層１２よりも微細で緻密に形成されて粒界
が少なく、表面が平坦に形成されている。なお、これら
第１、第２導電層１２、１３は、フィルム基板３上に第
１導電層１２を成膜し、この第１導電層１２上に第２導
電層１３を成膜した後に、フォトリソグラフィ法により
一括して所定形状に形成されている。また、上側の電極
基板１の透明電極７も、下側の電極基板２の透明電極４
と同様に形成されている。The transparent electrodes 7, 4 of the upper and lower electrode substrates 1, 2 are formed on the transparent first conductive layer 12 formed on the film substrates 6, 3, respectively, and are formed on the first conductive layer 12. It has a two-layer structure with the transparent second conductive layer 13. That is, among the transparent electrodes 7 and 4, the first conductive layer 12 of the transparent electrode 4 of the lower electrode substrate 2 is formed on the film substrate 3 on an indium alloy such as indium-tin as shown in FIG. (ITM) is formed by a method such as vacuum evaporation, sputtering, or ion plating. In this formed state, the particles are coarse, many grain boundaries are present, and the electric resistance is as high as several hundred Ω. Is formed.
As shown in FIG. 2B, the second conductive layer 13 is formed by depositing indium oxide or indium oxide metal oxide (ITO) to which a small amount of tin oxide is added on the first conductive layer 12 by vacuum evaporation. A film is formed by a method such as sputtering or ion plating. In this formed state, particles are formed finer and more densely than the first conductive layer 12, the number of grain boundaries is reduced, and the surface is formed flat. ing. The first and second conductive layers 12 and 13 are formed by forming a first conductive layer 12 on the film substrate 3, forming the second conductive layer 13 on the first conductive layer 12, They are collectively formed into a predetermined shape by lithography. Further, the transparent electrode 7 of the upper electrode substrate 1 is also connected to the transparent electrode 4 of the lower electrode substrate 2.
It is formed similarly.
【００１０】このような液晶表示素子の上下の電極基板
１、２では、各フィルム基板６、３に形成された各透明
電極７、４の第１導電層１２がインジウム−スズなどの
インジウム合金（ＩＴＭ）で成膜されていることによ
り、成膜された状態で、粒子が粗大で粒界が多く存在
し、これにより電気抵抗は数百Ω程度と高いが、弾性係
数が大きくなり、曲げなどの応力を十分に吸収すること
ができる。また、第１導電層１２上に形成された第２導
電層１３が酸化インジウム、または少量の酸化スズを添
加した酸化インジウムの金属酸化物（ＩＴＯ）で成膜さ
れていることにより、成膜された状態で、粒子が第１導
電層１２よりも微細で緻密に形成されて粒界が少なく、
表面が平坦であるから、配向膜５、８にラビング処理な
どの配向処理を施す際に第２導電層１３の表面が傷付く
ことがなく、耐擦傷性に優れ、かつ粒界が少ないので電
気抵抗を低くすることができる。しかも、第２導電層１
３は粒界が少ないことにより弾性係数が小さくなるが、
第１導電層１２の弾性係数が大きいので、フィルム基板
３、６が曲げられた際、その曲げなどの応力により第２
導電層１３に亀裂や割れなどが生じても、第１導電層１
２が曲げなどの応力を吸収して破損することがないの
で、透明電極４、７の断線を防ぐことができ、これによ
り耐擦傷性および耐屈曲性に優れ、断線しにくい透明電
極４、７を得ることができる。In the upper and lower electrode substrates 1 and 2 of such a liquid crystal display element, the first conductive layers 12 of the transparent electrodes 7 and 4 formed on the film substrates 6 and 3 are formed of an indium alloy such as indium-tin. Since the film is formed by ITM), in the formed state, the particles are coarse and many grain boundaries are present, so that the electric resistance is as high as several hundred Ω, but the elastic coefficient is large, Can be sufficiently absorbed. Further, the second conductive layer 13 formed on the first conductive layer 12 is formed of indium oxide or metal oxide of indium oxide (ITO) to which a small amount of tin oxide is added, so that the second conductive layer 13 is formed. In this state, the particles are formed finer and denser than the first conductive layer 12 and have less grain boundaries,
Since the surfaces are flat, the surface of the second conductive layer 13 is not damaged when the alignment films 5 and 8 are subjected to an alignment treatment such as a rubbing treatment, has excellent scratch resistance, and has few grain boundaries. Resistance can be reduced. Moreover, the second conductive layer 1
In No. 3, the elastic modulus is reduced due to the small number of grain boundaries.
Since the elastic modulus of the first conductive layer 12 is large, when the film substrates 3 and 6 are bent, the second conductive layer 12 is subjected to a stress such as bending.
Even if cracks or cracks occur in the conductive layer 13, the first conductive layer 1
2 does not break due to absorption of stress such as bending, so that disconnection of the transparent electrodes 4 and 7 can be prevented, whereby the transparent electrodes 4 and 7 are excellent in scratch resistance and bending resistance and are hard to be disconnected. Can be obtained.
【００１１】［第２実施形態］次に、図３および図４を
参照して、この発明の電極基板を液晶表示素子に適用し
た第２実施形態について説明する。なお、図１および図
２に示された第１実施形態と同一部分には同一符号を付
し、その説明は省略する。この液晶表示素子は、上下の
電極基板１、２の透明電極２０、２１が第１実施形態と
異なり、これ以外は第１実施形態と同じ構成になってい
る。すなわち、上下の電極基板１、２の透明電極２０、
２１は、それぞれ、フィルム基板６、３に形成された透
明な第１導電層２２と、この第１導電層２２上に形成さ
れた透明な第２導電層２３との２層構造に形成されてい
る。[Second Embodiment] Next, a second embodiment in which the electrode substrate of the present invention is applied to a liquid crystal display device will be described with reference to FIGS. The same parts as those in the first embodiment shown in FIGS. 1 and 2 are denoted by the same reference numerals, and description thereof will be omitted. This liquid crystal display element has the same configuration as the first embodiment except that the transparent electrodes 20, 21 of the upper and lower electrode substrates 1, 2 are different from the first embodiment. That is, the transparent electrodes 20 of the upper and lower electrode substrates 1 and 2,
Reference numeral 21 denotes a two-layer structure of a transparent first conductive layer 22 formed on the film substrates 6 and 3 and a transparent second conductive layer 23 formed on the first conductive layer 22, respectively. I have.
【００１２】この場合、各透明電極２０、２１のうち、
下側の電極基板２の透明電極２１の第１、第２導電層２
２、２３は、それぞれ、酸化インジウム、または少量の
酸化スズを添加した酸化インジウムの金属酸化物（ＩＴ
Ｏ）を真空蒸着、スパッタリング、イオンプレーティン
グなどの方法により成膜してなるが、その成膜条件が第
１、第２導電層２２、２３でそれぞれ異なっている。す
なわち、第１導電層２２は、図４（ａ）に示すように、
フィルム基板３の上面に金属酸化物（ＩＴＯ）を成膜す
るときに、所定の酸素分圧（１０-3Ｐａ）付近よりも低
い状態で成膜され、これにより成膜された状態で、粒子
が粗大で粒界が多く存在した組成で形成されている。ま
た、第２導電層２３は、図４（ｂ）に示すように、第１
導電層２２上に金属酸化物（ＩＴＯ）を成膜するとき
に、所定の酸素分圧（１０-3Ｐａ）付近の状態で成膜さ
れ、これにより成膜された状態で、粒子が第１導電層２
２よりも微細で緻密に形成されて粒界が少ない組成で形
成されている。なお、これら第１、第２導電層２２、２
３は、第１実施形態と同様、フィルム基板３の上面に第
１導電層２２を成膜し、この第１導電層２２上に第２導
電層２３を成膜した後に、フォトリソグラフィ法により
一括して所定形状に形成されている。また、上側の電極
基板１の透明電極２０も、下側の電極基板２の透明電極
２１と同様に形成されている。In this case, of the transparent electrodes 20 and 21,
First and second conductive layers 2 of transparent electrode 21 of lower electrode substrate 2
2, 23 are metal oxides of indium oxide or indium oxide to which a small amount of tin oxide is added (IT
O) is formed by a method such as vacuum evaporation, sputtering, or ion plating, and the film forming conditions are different between the first and second conductive layers 22 and 23. That is, as shown in FIG. 4A, the first conductive layer 22
When a metal oxide (ITO) is formed on the upper surface of the film substrate 3, the film is formed in a state lower than the vicinity of a predetermined oxygen partial pressure (10 −3 Pa). Is formed with a composition having coarse grains and many grain boundaries. Further, as shown in FIG. 4B, the second conductive layer 23
When a metal oxide (ITO) is formed on the conductive layer 22, the film is formed in a state near a predetermined oxygen partial pressure (10 −3 Pa). Conductive layer 2
It is formed with a composition that is finer and denser than 2, and has few grain boundaries. The first and second conductive layers 22, 2
3, a first conductive layer 22 is formed on the upper surface of the film substrate 3, and a second conductive layer 23 is formed on the first conductive layer 22, as in the first embodiment. It is formed in a predetermined shape. Further, the transparent electrode 20 of the upper electrode substrate 1 is formed similarly to the transparent electrode 21 of the lower electrode substrate 2.
【００１３】このような液晶表示素子の各電極基板１、
２では、各フィルム基板６、３に形成される各透明電極
２０、２１の第１導電層２２が、酸化インジウム、また
は少量の酸化スズを添加した酸化インジウムの金属酸化
物（ＩＴＯ）を成膜するときに、所定の酸素分圧（１０
-3Ｐａ）付近よりも低い状態で成膜されることにより、
成膜された状態で、粒子が粗大で粒界が多く存在する組
成であるから、電気抵抗が高くなるが、弾性係数は大き
くなり、曲げなどの応力を十分に吸収することができ
る。また、第１導電層２２上に形成された第２導電層２
３が、酸化インジウム、または少量の酸化スズを添加し
た酸化インジウムの金属酸化物（ＩＴＯ）を成膜すると
きに、所定の酸素分圧（１０-3Ｐａ）付近の状態で成膜
されることにより、成膜された状態で、粒子が第１導電
層２２よりも微細で緻密に形成されて粒界が少ない組成
であるから、表面が平坦になり、配向膜５、８にラビン
グ処理などの配向処理を施す際に第２導電層２３の表面
が傷付くことがなく、耐擦傷性に優れ、かつ粒界が少な
いので電気抵抗を低くすることができる。Each of the electrode substrates 1 of such a liquid crystal display element,
In 2, the first conductive layer 22 of each of the transparent electrodes 20 and 21 formed on each of the film substrates 6 and 3 is formed of indium oxide or indium oxide metal oxide (ITO) to which a small amount of tin oxide is added. When performing a predetermined oxygen partial pressure (10
-3 Pa), the film is formed in a state lower than around
In a film-formed state, since the composition is such that the particles are coarse and many grain boundaries are present, the electric resistance is high, but the elastic coefficient is large and stress such as bending can be sufficiently absorbed. The second conductive layer 2 formed on the first conductive layer 22
3 is to be formed in the vicinity of a predetermined oxygen partial pressure (10 −3 Pa) when forming a film of indium oxide or indium oxide metal oxide (ITO) to which a small amount of tin oxide is added. As a result, in the film-formed state, the particles are formed finer and more densely than the first conductive layer 22 and have a smaller number of grain boundaries, so that the surfaces become flat and the alignment films 5 and 8 are subjected to rubbing treatment or the like. When the orientation treatment is performed, the surface of the second conductive layer 23 is not damaged, the scratch resistance is excellent, and the number of grain boundaries is small, so that the electric resistance can be reduced.
【００１４】この場合、第２導電層２３は粒界が少ない
ことにより弾性係数が小さくなるが、第１導電層２２の
弾性係数が大きいので、フィルム基板３、６が曲げられ
た際、その曲げなどの応力により第２導電層２３に亀裂
や割れなどが生じても、第１導電層２２が曲げなどの応
力を吸収して破損することがなくので、透明電極２０、
２１の断線を防ぐことができ、これにより耐擦傷性およ
び耐屈曲性に優れ、断線しにくい透明電極２０、２１を
得ることができる。また、この電極基板１、２の各透明
電極２０、２１では、酸化インジウム、または少量の酸
化スズを添加した酸化インジウムの金属酸化物（ＩＴ
Ｏ）を成膜するときに、同一の蒸着源を用いて酸素分圧
を変えるだけで、第１、第２導電層２２、２３を成膜す
ることができるので、同じ装置内で連続して第１、第２
導電層２２、２３を成膜することができ、製造工程の簡
素化を図ることができ、量産性が良い。In this case, the elastic modulus of the second conductive layer 23 is small due to the small number of grain boundaries, but the elastic modulus of the first conductive layer 22 is large, so that when the film substrates 3 and 6 are bent, Even if cracks or cracks occur in the second conductive layer 23 due to such stress, the first conductive layer 22 does not break by absorbing stress such as bending.
Disconnection of the transparent electrodes 21 and 21 can be prevented, whereby the transparent electrodes 20 and 21 which are excellent in scratch resistance and bending resistance and hard to be disconnected can be obtained. In addition, in each of the transparent electrodes 20 and 21 of the electrode substrates 1 and 2, a metal oxide of indium oxide or indium oxide to which a small amount of tin oxide is added (IT
When forming O), the first and second conductive layers 22 and 23 can be formed only by changing the oxygen partial pressure using the same evaporation source, so that they can be continuously formed in the same apparatus. 1st, 2nd
The conductive layers 22 and 23 can be formed, the manufacturing process can be simplified, and mass productivity is good.
【００１５】なお、上記第１、第２実施形態では、液晶
表示素子に適用した場合について述べたが、これに限ら
ず、例えば、エレクトロルミネッセンス表示素子などの
薄型形状のディスプレイ、あるいはタッチパネルや平面
発光素子などにも広く適用することができる。In the first and second embodiments, the case where the present invention is applied to a liquid crystal display element has been described. However, the present invention is not limited to this. For example, a thin display such as an electroluminescence display element, a touch panel, It can be widely applied to devices and the like.
【００１６】[0016]
【発明の効果】以上説明したように、この発明によれ
ば、可撓性を有する基板に形成される透明電極を第１導
電層と第２導電層の２層構造にし、基板上に形成される
第１導電層を粗大な粒子で成膜したことにより、粒界が
多く存在し、これにより弾性係数が大きくなり、曲げな
どの応力を吸収することができ、また第１導電層上に形
成される第２導電層を第１導電層の粒径よりも小さい粒
子で成膜したことにより、第１導電層よりも緻密で粒界
が少なく、これにより表面が平坦になり耐擦傷性に優
れ、かつ粒界が少ないので電気抵抗を低くすることがで
き、しかも粒界が少ないことにより第２導電層の弾性係
数が小さくなるが、第１導電層の弾性係数が大きいの
で、曲げなどの応力により第２導電層に亀裂や割れなど
が生じても、第１導電層が曲げなどの応力を吸収して破
損することがないので、透明電極の断線を防ぐことがで
き、これにより耐擦傷性および耐屈曲性に優れ、断線し
にくい透明電極を得ることができる。As described above, according to the present invention, the transparent electrode formed on the flexible substrate has a two-layer structure of the first conductive layer and the second conductive layer, and is formed on the substrate. The first conductive layer formed of coarse particles has many grain boundaries, thereby increasing the elastic coefficient, absorbing stress such as bending, and forming the first conductive layer on the first conductive layer. By forming the second conductive layer to be formed with particles smaller than the particle size of the first conductive layer, the second conductive layer is denser and has fewer grain boundaries than the first conductive layer, so that the surface becomes flat and has excellent scratch resistance. In addition, since the number of grain boundaries is small, the electric resistance can be reduced. In addition, since the number of grain boundaries is small, the elastic coefficient of the second conductive layer is small. Causes cracks or cracks in the second conductive layer, Since no bending damaged by absorbing stress such can prevent disconnection of the transparent electrodes, thereby excellent in abrasion resistance and flex resistance can be obtained disconnection hard transparent electrode.
【図１】この発明の電極基板を液晶表示素子に適用した
第１実施形態を示した拡大断面図。FIG. 1 is an enlarged sectional view showing a first embodiment in which an electrode substrate according to the present invention is applied to a liquid crystal display device.
【図２】図１の電極基板の製造工程を示し、（ａ）はフ
ィルム基板に第１導電層を成膜した状態の要部拡大断面
図、（ｂ）はその第１導電層上に第２導電層を成膜した
状態の要部拡大断面図。FIGS. 2A and 2B show a manufacturing process of the electrode substrate of FIG. 1, wherein FIG. 2A is an enlarged sectional view of a main part in a state where a first conductive layer is formed on a film substrate, and FIG. The principal part expanded sectional view in the state which formed 2 conductive layers.
【図３】この発明の電極基板を液晶表示素子に適用した
第２実施形態を示した拡大断面図。FIG. 3 is an enlarged sectional view showing a second embodiment in which the electrode substrate of the present invention is applied to a liquid crystal display device.
【図４】図３の電極基板の製造工程を示し、（ａ）はフ
ィルム基板に第１導電層を成膜した状態の要部拡大断面
図、（ｂ）はその第１導電層上に第２導電層を成膜した
状態の要部拡大断面図。4A to 4C show a manufacturing process of the electrode substrate of FIG. 3, wherein FIG. 4A is an enlarged sectional view of a main part in a state where a first conductive layer is formed on a film substrate, and FIG. The principal part expanded sectional view in the state which formed 2 conductive layers.
１、２ 電極基板 ３、６ フィルム基板 ４、７、２０、２１ 透明電極 １２、２２ 第１導電層 １３、２３ 第２導電層 1, 2 electrode substrate 3, 6 film substrate 4, 7, 20, 21 transparent electrode 12, 22 first conductive layer 13, 23 second conductive layer
Claims (3)
た電極基板において、 前記透明電極が、前記基板上に粗大な粒子で形成された
透明な第１導電層と、この第１導電層上に粒径が前記第
１導電層の粒径よりも小さい粒子で形成された透明な第
２導電層との２層構造に形成されていることを特徴とす
る電極基板。1. An electrode substrate having a transparent electrode formed on a flexible substrate, wherein the transparent electrode comprises a transparent first conductive layer formed of coarse particles on the substrate; An electrode substrate having a two-layer structure including a transparent second conductive layer formed of particles having a particle size smaller than that of the first conductive layer on the layer.
れ、前記第２導電層は酸化インジウムの金属酸化物で形
成されていることを特徴とする請求項１記載の電極基
板。2. The electrode substrate according to claim 1, wherein said first conductive layer is formed of an indium alloy, and said second conductive layer is formed of a metal oxide of indium oxide.
それぞれ酸化インジウムの金属酸化物で形成され、前記
第１導電層はその成膜時に所定の酸素分圧付近以外の状
態で成膜され、前記第２導電層はその成膜時に所定の酸
素分圧付近の状態で成膜されていることを特徴とする請
求項１記載の電極基板。3. The first conductive layer and the second conductive layer,
The first conductive layer is formed of a metal oxide of indium oxide, the first conductive layer is formed in a state other than the vicinity of a predetermined oxygen partial pressure at the time of film formation, and the second conductive layer is formed of a predetermined oxygen partial pressure at the time of film formation. 2. The electrode substrate according to claim 1, wherein the electrode substrate is formed in the vicinity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP09050299A JP3972508B2 (en) | 1999-03-31 | 1999-03-31 | Electrode substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP09050299A JP3972508B2 (en) | 1999-03-31 | 1999-03-31 | Electrode substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000285736A true JP2000285736A (en) | 2000-10-13 |
| JP3972508B2 JP3972508B2 (en) | 2007-09-05 |
Family
ID=14000285
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP09050299A Expired - Fee Related JP3972508B2 (en) | 1999-03-31 | 1999-03-31 | Electrode substrate |
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| Country | Link |
|---|---|
| JP (1) | JP3972508B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7137903B2 (en) | 2004-04-21 | 2006-11-21 | Acushnet Company | Transitioning hollow golf clubs |
| US7942760B2 (en) | 2004-04-21 | 2011-05-17 | Cobra Golf Incorporated | Transitioning hollow golf clubs |
| WO2011070801A1 (en) * | 2009-12-10 | 2011-06-16 | 凸版印刷株式会社 | Conductive substrate, method for producing same, and touch panel |
-
1999
- 1999-03-31 JP JP09050299A patent/JP3972508B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7137903B2 (en) | 2004-04-21 | 2006-11-21 | Acushnet Company | Transitioning hollow golf clubs |
| US7147571B2 (en) | 2004-04-21 | 2006-12-12 | Acushnet Company | Transitioning hollow golf clubs |
| US7942760B2 (en) | 2004-04-21 | 2011-05-17 | Cobra Golf Incorporated | Transitioning hollow golf clubs |
| WO2011070801A1 (en) * | 2009-12-10 | 2011-06-16 | 凸版印刷株式会社 | Conductive substrate, method for producing same, and touch panel |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3972508B2 (en) | 2007-09-05 |
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