JP2000273663A - Corrosion preventive for metal and cleaning solution - Google Patents
Corrosion preventive for metal and cleaning solutionInfo
- Publication number
- JP2000273663A JP2000273663A JP2000003568A JP2000003568A JP2000273663A JP 2000273663 A JP2000273663 A JP 2000273663A JP 2000003568 A JP2000003568 A JP 2000003568A JP 2000003568 A JP2000003568 A JP 2000003568A JP 2000273663 A JP2000273663 A JP 2000273663A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- solution
- semiconductor device
- metal
- corrosion inhibitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Detergent Compositions (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
- Preventing Corrosion Or Incrustation Of Metals (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、金属の腐食防止剤
及び洗浄液に関する。更に詳しくは、本発明は、半導体
デバイスなどの洗浄に用いられる金属腐食防止剤及び洗
浄液に関する。TECHNICAL FIELD The present invention relates to a metal corrosion inhibitor and a cleaning solution. More specifically, the present invention relates to a metal corrosion inhibitor and a cleaning liquid used for cleaning semiconductor devices and the like.
【０００２】[0002]
【従来の技術】従来半導体デバイスの配線形成は、配線
となる金属をシリコンウエハー上に成膜し、リソグラフ
ィー工程とドライエッチング工程を経ることで配線を形
成し、配線間を絶縁膜で埋めるという方法が一般的であ
った。ところが近年、特殊な研磨剤と研磨用パッドを用
いた化学的機械研磨方法（ケミカルメカニカルポリッシ
ング、以下ＣＭＰと略記することがある）が開発され、
このＣＭＰを用いたダマシン方法による配線形成法が注
目されるようになってきた。この方法は、最初に絶縁膜
を形成し、その後リソグラフィー工程とドライエッチン
グ工程により配線溝を形成し、その後金属を成膜するこ
とで溝内に金属を埋め込み、その後ＣＭＰにより溝以外
の金属膜を研磨除去するというものである。2. Description of the Related Art Conventionally, wiring of a semiconductor device is formed by forming a metal to be a wiring on a silicon wafer, forming a wiring through a lithography process and a dry etching process, and filling the space between the wirings with an insulating film. Was common. However, in recent years, a chemical mechanical polishing method (chemical mechanical polishing, sometimes abbreviated as CMP hereinafter) using a special abrasive and a polishing pad has been developed,
Attention has been paid to a wiring forming method by a damascene method using the CMP. In this method, an insulating film is first formed, then a wiring groove is formed by a lithography process and a dry etching process, and then a metal is formed to bury the metal in the groove, and then a metal film other than the groove is formed by CMP. It is to remove by polishing.
【０００３】しかしながら、このＣＭＰによる金属配線
形成では、金属の研磨を行った後の研磨剤や研磨によっ
て発生する研磨屑や、研磨剤や研磨パッド等に含まれる
金属不純物等が、ウエハー表面や裏面に多数付着するた
め、研磨後の表面を洗浄する必要がある。[0003] However, in the metal wiring formation by the CMP, the abrasive after the metal is polished, the polishing debris generated by the polishing, the metal impurities contained in the abrasive or the polishing pad, etc. are removed from the front and rear surfaces of the wafer. Therefore, it is necessary to clean the surface after polishing.
【０００４】一般的にウエハー表面の粒子を除去するた
めには、一度表面から離れた粒子を再付着させないこと
が重要であるので、アルカリ性溶液で洗浄を行うことが
望ましい。また、金属不純物を除去するためには、金属
の溶解力の強い酸性溶液で行うことが望ましい。Generally, in order to remove particles on the surface of a wafer, it is important not to re-attach the particles once separated from the surface. Therefore, it is desirable to perform cleaning with an alkaline solution. In order to remove metal impurities, it is desirable to use an acidic solution having strong metal dissolving power.
【０００５】しかしながら、金属はアルカリ溶液や酸性
溶液には容易に腐食されることが知られており、通常こ
れらの溶液で金属配線が露出しているウエハー表面を洗
浄した場合、洗浄後の金属表面が腐食により侵食され、
配線抵抗が増大したり、断線を引き起こしてしまうとい
った問題が発生する。However, it is known that metals are easily corroded by an alkaline solution or an acidic solution, and when such a solution is used to clean a wafer surface on which metal wiring is exposed, the metal surface after the cleaning is usually used. Is eroded by corrosion,
Problems such as an increase in wiring resistance and an occurrence of disconnection occur.
【０００６】また、金属を腐食させないための腐食防止
剤としては、たとえばベンゾトリアゾールや５−メチル
ベンズイミダゾールといった芳香族炭化水素類の化合物
が知られており、これらの腐食防止剤添加による試みも
検討されている。しかしながら、近年環境中に放出され
ている多種多様な化学物質の、人の健康や生態系に与え
る影響について検討が進められており、金属の腐食防止
剤としても、従来以上に水環境を経由して人の健康や生
態系に有害な影響を与える恐れが少ないものが求められ
ていた。As corrosion inhibitors for preventing corrosion of metals, compounds of aromatic hydrocarbons such as benzotriazole and 5-methylbenzimidazole are known, and attempts to add these corrosion inhibitors are also studied. Have been. However, the effects of a variety of chemical substances released into the environment on human health and ecosystems in recent years are being studied. Therefore, there is a need for a material that has a low risk of adversely affecting human health and an ecosystem.
【０００７】[0007]
【発明が解決しようとする課題】本発明の目的は、従来
以上に水環境を経由して人の健康や生態系に有害な影響
を与える恐れが少ない金属の腐食防止剤、及び該腐食防
止剤を主成分とする半導体デバイスなどの洗浄に好適な
洗浄液を提供することにある。SUMMARY OF THE INVENTION It is an object of the present invention to provide a metal corrosion inhibitor which is less likely to have a harmful effect on human health and ecosystems via an aquatic environment than before, and the corrosion inhibitor. It is an object of the present invention to provide a cleaning liquid suitable for cleaning a semiconductor device or the like containing as a main component.
【０００８】[0008]
【課題を解決するための手段】本発明者らは、上記した
ような問題点がない金属腐食防止剤について鋭意検討を
重ねた結果、メルカプト基が結合している炭素と水酸基
が結合している炭素とが隣接して結合している化合物
が、金属腐食性を有さず、半導体デバイスなどの洗浄に
好適であり、しかも従来以上に水環境を経由して人の健
康や生態系に有害な影響を与える恐れが少ないことを見
いだし、本発明を完成させるに至った。すなわち、本発
明は、〔１〕分子内に少なくとも１つのメルカプト基を
含む化合物であり、化合物を構成する炭素数が２以上で
あり、メルカプト基が結合している炭素と水酸基が結合
している炭素とが隣接して結合している脂肪族アルコー
ル系化合物を含有してなる金属の腐食防止剤に係るもの
である。The present inventors have conducted intensive studies on a metal corrosion inhibitor which does not have the above-mentioned problems, and as a result, it has been found that carbon having a mercapto group and hydroxyl group are bonded. Compounds in which carbon is bonded adjacently do not have metal corrosivity, are suitable for cleaning semiconductor devices, etc., and are more harmful to human health and ecosystems through the water environment than before. The inventors have found that there is little possibility of having an influence, and have completed the present invention. That is, the present invention relates to [1] a compound containing at least one mercapto group in a molecule, wherein the compound has two or more carbon atoms, and the carbon to which the mercapto group is bonded and the hydroxyl group are bonded. The present invention relates to a metal corrosion inhibitor containing an aliphatic alcohol-based compound in which carbon is bonded adjacently.
【０００９】また、本発明は、〔２〕上記の腐食防止剤
を含有してなる洗浄液に係るものである。さらに、本発
明は、〔３〕半導体デバイスを前記〔２〕記載の洗浄液
で洗浄する半導体デバイスの洗浄方法に係るものであ
る。Further, the present invention relates to [2] a cleaning solution containing the above-mentioned corrosion inhibitor. Furthermore, the present invention relates to [3] a method for cleaning a semiconductor device, wherein the semiconductor device is cleaned with the cleaning liquid described in [2].
【００１０】[0010]
【発明の実施の形態】本発明の腐食防止剤は、分子内に
少なくとも１つのメルカプト基を含む脂肪族アルコール
系化合物からなる。該脂肪族アルコール系化合物は、炭
素数が２以上であり、メルカプト基が結合している炭素
と水酸基と結合している炭素が隣接して結合しているこ
と、すなわち該両炭素が直接結合していることが、良好
な腐食防止効果を発揮するため必要である。該脂肪族ア
ルコール系化合物の好ましい具体例としては、２−メル
カプトエタノール又はチオグリセロールをあげることが
できる。BEST MODE FOR CARRYING OUT THE INVENTION The corrosion inhibitor of the present invention comprises an aliphatic alcohol compound containing at least one mercapto group in a molecule. The aliphatic alcohol compound has two or more carbon atoms, and the carbon to which the mercapto group is bonded and the carbon to which the hydroxyl group is bonded are adjacently bonded, that is, both carbons are directly bonded. Is necessary for exhibiting a good corrosion prevention effect. Preferred specific examples of the aliphatic alcohol-based compound include 2-mercaptoethanol and thioglycerol.
【００１１】本発明の腐食防止剤は、金属の腐食を防止
するものであるが、該金属としては銅又は銅を含む合金
をあげることができる。The corrosion inhibitor of the present invention prevents corrosion of metals. Examples of the metals include copper and alloys containing copper.
【００１２】本発明の腐食防止剤は、洗浄液に含有させ
ることにより、腐食性を有さない洗浄液を提供すること
ができる。ここで洗浄液としては、半導体デバイス用の
洗浄液をあげることができる。特に、銅配線を有する半
導体デバイス用の洗浄液として用いることにより、本発
明の特徴を十分に発揮することができる。洗浄液として
は、アルカリ性溶液又は酸性溶液のいずれも使用でき
る。When the corrosion inhibitor of the present invention is contained in a cleaning solution, a non-corrosive cleaning solution can be provided. Here, examples of the cleaning liquid include cleaning liquids for semiconductor devices. In particular, when used as a cleaning solution for a semiconductor device having copper wiring, the features of the present invention can be sufficiently exhibited. Either an alkaline solution or an acidic solution can be used as the cleaning solution.
【００１３】洗浄液中における腐食防止剤の濃度は、
０．０００１〜１０重量％が好ましく、更に好ましくは
０．００１〜１重量％である。該濃度が低すぎると十分
な腐食防止効果を得ることができない場合があり、一方
該濃度が高すぎると、腐食防止効果の更なる向上は発現
できず、メルカプト基を含む化合物特有の臭気により、
洗浄液の取扱いが困難になる場合がある。The concentration of the corrosion inhibitor in the cleaning solution is
The content is preferably 0.0001 to 10% by weight, and more preferably 0.001 to 1% by weight. If the concentration is too low, it may not be possible to obtain a sufficient corrosion inhibitory effect.On the other hand, if the concentration is too high, further improvement of the corrosion inhibitory effect cannot be exhibited, due to the odor peculiar to the compound containing a mercapto group.
It may be difficult to handle the cleaning liquid.
【００１４】洗浄液を得るには、洗浄液に本発明の腐食
防止剤を添加して攪拌し、腐食防止剤を溶解させればよ
い。In order to obtain a cleaning solution, the corrosion inhibitor of the present invention may be added to the cleaning solution and stirred to dissolve the corrosion inhibitor.
【００１５】本発明の洗浄液を用いる方法は、特に制限
はなく、通常の洗浄法を用いることができる。The method using the cleaning solution of the present invention is not particularly limited, and a usual cleaning method can be used.
【００１６】上記腐食防止剤を添加する洗浄液として
は、ウエハー上の微粒子除去性に有効であるが、銅配線
の腐食が発生しやすいアルカリ性溶液や、ウエハー上の
金属不純物除去性に有効であるが、同じく銅配線の腐食
が発生しやすい酸性溶液中に添加することが望ましい。The cleaning liquid to which the corrosion inhibitor is added is effective for removing fine particles on a wafer, but is effective for removing alkaline impurities which easily cause corrosion of copper wiring and metal impurities on a wafer. Similarly, it is desirable to add it to an acidic solution in which corrosion of the copper wiring is likely to occur.
【００１７】アルカリ性溶液としては特に制限はなく、
水酸化ナトリウムや水酸化カリウム、水酸化アンモニウ
ムといった無機化合物の水溶液や、水酸化テトラメチル
アンモニウムやコリンといった有機化合物の水溶液を用
いることができる。中でも、半導体デバイス用として、
金属不純物や微粒子を除去、精製された水酸化アンモニ
ウムや水酸化テトラメチルアンモニウム、コリンといっ
た化合物の水溶液を用いることが好ましい。The alkaline solution is not particularly limited.
An aqueous solution of an inorganic compound such as sodium hydroxide, potassium hydroxide, or ammonium hydroxide, or an aqueous solution of an organic compound such as tetramethylammonium hydroxide or choline can be used. Among them, for semiconductor devices,
It is preferable to use an aqueous solution of a compound such as ammonium hydroxide, tetramethylammonium hydroxide, or choline which is purified by removing metal impurities and fine particles.
【００１８】酸性溶液としても特に制限はなく、塩酸や
フッ酸、硫酸や硝酸のような無機系の酸性溶液や、シュ
ウ酸、クエン酸、マロン酸、リンゴ酸、フマル酸、マレ
イン酸といった有機系の酸性溶液を用いることができ
る。中でも、半導体デバイス用として、金属不純物や微
粒子を除去、精製された塩酸、フッ酸、硫酸、硝酸、シ
ュウ酸、クエン酸といった酸性の水溶液を用いることが
好ましい。There is no particular limitation on the acidic solution. An inorganic acidic solution such as hydrochloric acid, hydrofluoric acid, sulfuric acid or nitric acid, or an organic acid solution such as oxalic acid, citric acid, malonic acid, malic acid, fumaric acid or maleic acid is used. Can be used. Above all, for semiconductor devices, it is preferable to use an acidic aqueous solution such as hydrochloric acid, hydrofluoric acid, sulfuric acid, nitric acid, oxalic acid, or citric acid, which is obtained by removing metal impurities and fine particles.
【００１９】また、これら腐食防止剤を添加したアルカ
リ性溶液や酸性溶液は、そのまま使用する他に、腐食抑
制剤の性能を妨害しないその他の薬液と混合して使用し
てもよい。中でも、半導体デバイス用として精製され
た、過酸化水素水、フッ化アンモニウム等と混合して使
用しても良い。The alkaline solution or acidic solution to which the corrosion inhibitor is added may be used as it is, or may be used by mixing with another chemical solution which does not hinder the performance of the corrosion inhibitor. Above all, it may be used as a mixture with a hydrogen peroxide solution, ammonium fluoride or the like purified for use in semiconductor devices.
【００２０】上記腐食防止剤を添加した洗浄液によるウ
エハーの洗浄には、ウエハーを洗浄液に直接浸漬するこ
とによる浸漬洗浄法や、浸漬洗浄法に超音波照射を併用
した方法、洗浄液をウエハー表面に吹きかけながらブラ
シにより洗浄するブラシ洗浄法や、ブラシ洗浄と超音波
照射を併用する方法等を用いることができる。洗浄する
際に洗浄液を加熱することもできる。The cleaning of the wafer with the cleaning liquid to which the corrosion inhibitor has been added is performed by immersion cleaning by directly immersing the wafer in the cleaning liquid, by immersion cleaning using ultrasonic irradiation, or by spraying the cleaning liquid onto the wafer surface. A brush cleaning method of cleaning with a brush while using a brush, a method of using both brush cleaning and ultrasonic irradiation, or the like can be used. When washing, the washing liquid can be heated.
【００２１】[0021]
【実施例】本発明を実施例により更に詳細に説明する
が、本発明はこれら実施例に限定されるものではない。 実施例１、２及び比較例１〜５ ０．１重量％のアンモニア水を洗浄液とし、表１に記載
した本発明の腐食防止剤を所定量添加し、本発明の腐食
防止効果をもつ洗浄液とした。比較として、腐食防止剤
を添加しないままの洗浄液、本発明の腐食防止剤に化学
構造的に類似の化合物を添加した洗浄液、及び芳香族炭
化水素類の腐食防止剤としてベンゾトリアゾールを添加
した洗浄液をそれぞれ調製した。この洗浄液中に、スパ
ッタ法によりＣｕ膜１００００Åを成膜したシリコンウ
エハーを試験片として３０分間浸漬し、浸漬前後のＣｕ
膜の膜厚を測定し、膜厚変化量から溶解速度を算出し、
腐食防止効果を判定した。また、浸漬前後の表面を電子
顕微鏡で観察し、Ｃｕ膜表面の状態状態を観察した。な
お、膜厚の測定にはナプソン社製のシート抵抗測定装置
を用い、シート抵抗値の値より膜厚換算する方法を用い
た。EXAMPLES The present invention will be described in more detail with reference to examples, but the present invention is not limited to these examples. Examples 1 and 2 and Comparative Examples 1 to 5 0.1% by weight of aqueous ammonia was used as a cleaning solution, and a predetermined amount of the corrosion inhibitor of the present invention described in Table 1 was added. did. As a comparison, a cleaning solution without adding a corrosion inhibitor, a cleaning solution in which a chemical structurally similar compound was added to the corrosion inhibitor of the present invention, and a cleaning solution in which benzotriazole was added as a corrosion inhibitor for aromatic hydrocarbons were used. Each was prepared. A silicon wafer on which a Cu film having a thickness of 10000 ° was formed by a sputtering method was immersed in the cleaning solution for 30 minutes as a test piece, and Cu before and after immersion was used.
Measure the film thickness, calculate the dissolution rate from the change in film thickness,
The corrosion prevention effect was determined. The surface before and after the immersion was observed with an electron microscope, and the state of the Cu film surface was observed. The film thickness was measured using a sheet resistance measuring device manufactured by Napson Corporation, and a method of converting the film thickness from the sheet resistance value was used.
【００２２】結果を表１に示す。表１より、本発明の腐
食防止剤が、アルカリ溶液による銅腐食防止に極めて有
効であることが確認され、また、ベンゾトリアゾールの
ような芳香族化合物ではないことから、従来以上に水環
境を経由して人の健康や生態系に有害な影響を与える恐
れが少ない。The results are shown in Table 1. From Table 1, it is confirmed that the corrosion inhibitor of the present invention is extremely effective in preventing copper corrosion by an alkali solution, and is not an aromatic compound such as benzotriazole. It is less likely to have harmful effects on human health and ecosystems.
【００２３】実施例３、４及び比較例６、７ ０．１重量％のフッ酸水溶液、又は１重量％の塩酸水溶
液を洗浄液とし、表２に記載した本発明の腐食防止剤を
所定量添加し、本発明の腐食防止効果をもつ洗浄液とし
た。比較として、腐食防止剤を添加しないままの洗浄液
を調製した。この洗浄液中に、スパッタ法によりＣｕ膜
１００００Åを成膜したシリコンウエハーを試験片とし
て３０分間浸漬し、浸漬前後のＣｕ膜の膜厚を測定し、
膜厚変化量から溶解速度を算出し、腐食防止効果を判定
した。また、浸漬前後の表面を電子顕微鏡で観察し、Ｃ
ｕ膜表面の表面状態を観察した。結果を表２に示す。表
２より、本発明腐食防止剤が、酸性溶液による銅腐食防
止に極めて有効であることが確認される。Examples 3 and 4 and Comparative Examples 6 and 7 A 0.1% by weight aqueous solution of hydrofluoric acid or a 1% by weight aqueous solution of hydrochloric acid was used as a washing solution, and a predetermined amount of the corrosion inhibitor of the present invention shown in Table 2 was added. Thus, a cleaning solution having a corrosion preventing effect according to the present invention was obtained. As a comparison, a cleaning solution without adding a corrosion inhibitor was prepared. In this cleaning solution, a silicon wafer on which a Cu film having a thickness of 10,000 Å was formed by a sputtering method was immersed for 30 minutes as a test piece, and the thickness of the Cu film before and after immersion was measured.
The dissolution rate was calculated from the change in film thickness, and the corrosion prevention effect was determined. Also, the surface before and after immersion was observed with an electron microscope, and C
The surface condition of the u film surface was observed. Table 2 shows the results. Table 2 confirms that the corrosion inhibitor of the present invention is extremely effective in preventing copper corrosion by an acidic solution.
【００２４】[0024]
【表1】 【table 1】
【００２５】[0025]
【表2】 [Table 2]
【００２６】・腐食防止剤 ＊１：チオグリセロール SHCH2CH(OH)CH2(OH) ＊２：２−メルカプトエタノール SHCH2CH2(OH) ＊３：グリセロール OHCH2CH(OH)CH2(OH) ＊４：チオグリコール酸 SHCH2COOH ＊５：ベンゾトリアゾール C6H5N3 ＊６：３―メルカプト１―プロパノール SHCH2CH2CH
2OH ・洗浄液 ＊７：０．１重量％フッ酸 ＊８：１重量％塩酸 ・表面状態 ○：変化なし ×：表面荒れCorrosion inhibitor * 1: Thioglycerol SHCHTwoCH (OH) CHTwo(OH) * 2: 2-mercaptoethanol SHCHTwoCHTwo(OH) * 3: Glycerol OHCHTwoCH (OH) CHTwo(OH) * 4: Thioglycolic acid SHCHTwoCOOH * 5: Benzotriazole C6HFiveNThree * 6: 3-mercapto 1-propanol SHCHTwoCHTwoCH
TwoOH ・ Cleaning solution * 7: 0.1% by weight hydrofluoric acid * 8: 1% by weight hydrochloric acid ・ Surface condition ○: No change ×: Surface roughness
【００２７】[0027]
【発明の効果】本発明により、従来以上に水環境を経由
して人の健康や生態系に有害な影響を与える恐れが少な
い金属の腐食防止剤、及び該腐食防止剤を主成分とする
半導体デバイスなどの洗浄に好適な洗浄液を提供するこ
とができる。Industrial Applicability According to the present invention, a metal corrosion inhibitor which is less likely to have a harmful effect on human health and an ecosystem via a water environment than ever before, and a semiconductor containing the corrosion inhibitor as a main component A cleaning liquid suitable for cleaning a device or the like can be provided.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｃ２３Ｇ 1/18 Ｃ２３Ｇ 1/18 5/032 5/032 Ｈ０１Ｌ 21/304 ６４７ Ｈ０１Ｌ 21/304 ６４７Ａ // Ｂ０８Ｂ 3/08 Ｂ０８Ｂ 3/08 Ｚ ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification code FI Theme coat ゛ (Reference) C23G 1/18 C23G 1/18 5/032 5/032 H01L 21/304 647 H01L 21/304 647A // B08B 3/08 B08B 3/08 Z
Claims (10)
含む化合物であり、化合物を構成する炭素数が２以上で
あり、メルカプト基が結合している炭素と水酸基が結合
している炭素とが隣接して結合している、脂肪族アルコ
ール系化合物を含有してなる金属の腐食防止剤。1. A compound containing at least one mercapto group in a molecule, wherein the compound has two or more carbon atoms, and the carbon to which the mercapto group is bonded and the carbon to which the hydroxyl group are bonded are adjacent to each other. A metal corrosion inhibitor containing an aliphatic alcohol compound, which is bound by bonding.
トエタノール又はチオグリセロールである請求項１記載
の腐食防止剤。2. The corrosion inhibitor according to claim 1, wherein the aliphatic alcohol compound is 2-mercaptoethanol or thioglycerol.
１又は２記載の腐食防止剤。3. The corrosion inhibitor according to claim 1, wherein the metal is copper or an alloy containing copper.
剤を含有してなる洗浄液。4. A cleaning solution containing the corrosion inhibitor according to claim 1.
載の洗浄液。5. The cleaning solution according to claim 4, which is used for cleaning a semiconductor device.
いる請求項４記載の洗浄液。6. The cleaning solution according to claim 4, which is used for cleaning a semiconductor device having copper wiring.
６のいずれかに記載の洗浄液。7. The cleaning liquid according to claim 4, wherein the cleaning liquid is an alkaline solution.
7. The cleaning solution according to any one of 6.
ずれかに記載の洗浄液。8. The cleaning solution according to claim 4, wherein the cleaning solution is an acidic solution.
に記載の洗浄液で洗浄する半導体デバイスの洗浄方法。9. A method for cleaning a semiconductor device, comprising cleaning the semiconductor device with the cleaning liquid according to claim 4.
４〜８のいずれかに記載の洗浄液で洗浄する半導体デバ
イスの洗浄方法。10. A semiconductor device cleaning method for cleaning a semiconductor device having copper wiring with the cleaning liquid according to claim 4.
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| JP2000003568A JP4114296B2 (en) | 1999-01-20 | 2000-01-12 | Metal corrosion inhibitor and cleaning solution |
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| JP11-11740 | 1999-01-20 | ||
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