JP2000267259A - Photomask, exposing method and aligner - Google Patents

Abstract

PROBLEM TO BE SOLVED: To realize an accurate exposure pattern by exactly obtaining optimum exposure corresponding to the change of the sensitivity of a resist. SOLUTION: A chip pattern and a pattern for measuring sensitivity are exposed on the resist (S1), the film thickness of a part on which the pattern for measuring sensitivity on the resist is exposed is measured (S2), and correction exposure is decided from the measured result and a resist film thickness and exposure table previously obtained (S3), then, correction exposure is performed with the correction exposure (S4).

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a photomask, an exposure method, and an exposure apparatus used for manufacturing a semiconductor device.

[0002]

2. Description of the Related Art In recent years, there is a chemically amplified resist as one of resists frequently used for electron beam exposure.
The chemically amplified resist has a problem that the optimal exposure dose changes depending on whether the resist is left before or after exposure.

The following three are considered as the causes. That is, it is conceivable that the reaction is inhibited by contaminants in the air, the resist components evaporate in a vacuum, and the dark reaction progresses in the resist. These causes a problem that the exposure sensitivity of the resist in the plane changes, and as a result, the optimum exposure amount changes.

[0004] Contaminants in the air are being solved by cleaning the air, but evaporation of the resist components and dark reactions are still insufficient with electron beam exposure because the resist is left in a vacuum for a long time. Has not been resolved.

Therefore, a method has been proposed in which the exposure amount is changed within the resist surface in accordance with a change in the optimum exposure amount due to a change in the exposure sensitivity of the resist. However, in this method, since the degree of change in the exposure sensitivity of the resist is determined based on experience, the exposure correction amount is not always accurate, and it is difficult to perform pattern exposure with high accuracy.

In the above method, if the resists are of the same type (standard), the degree of change in the exposure sensitivity of the resist is regarded as the same. However, even for resists of the same type (standard), variations in characteristics and the like exist among the resists, so that it is difficult to perform pattern exposure with high precision also from this point.

[0007]

As described above, the conventional method of changing the exposure amount within the resist surface in accordance with the degree of change of the optimum exposure amount due to the change of the exposure sensitivity of the resist is as follows. Since the degree of change of the optimum exposure amount due to the change is determined uniformly based on experience, it is difficult to perform highly accurate pattern exposure.

The present invention has been made in view of the above circumstances, and has as its object to provide a photomask which can be formed with high precision, and an exposure which can expose a pattern such as a photomask on a resist with high precision. It is an object of the present invention to provide a method and an exposure apparatus effective for implementing the exposure method.

[0009]

Means for Solving the Problems [Structure] In order to achieve the above object, a photomask according to the present invention comprises a main pattern and a correction formed in a region different from the region where the main pattern is formed. And a pattern for exposure. The main pattern is, for example, a circuit pattern.

[0010] The exposure method according to the present invention comprises the steps of:
Exposing a main pattern in a region, and a correction exposure pattern in a second region, obtaining a correction exposure amount based on the correction exposure pattern, and exposing the first region based on the correction exposure amount. And exposing the correction exposure pattern to the main pattern and the second region again.

The resist is provided on a transparent substrate such as a quartz substrate through a film such as a Cr film serving as a light shielding film. Alternatively, it is provided on a semiconductor substrate such as a Si substrate via a conductive film such as an Al film serving as an electrode.

An exposure apparatus according to the present invention comprises: an exposure apparatus main body for exposing a desired pattern on a resist; a means for obtaining a correction exposure amount based on the pattern exposed on the resist by the exposure apparatus main body; And an exposure assisting chamber connected to the exposure apparatus main body.

According to another aspect of the present invention, there is provided an exposure apparatus main body for exposing a desired pattern on a resist, means for obtaining a correction exposure amount based on the pattern exposed on the resist by the exposure apparatus main body, and The exposure apparatus further comprises means for heating the resist and an exposure auxiliary chamber connected to the exposure apparatus main body.

[Operation] Since the photomask according to the present invention can be formed with high precision by the exposure method according to the present invention, a desired pattern can be formed by using the photomask according to the present invention. .

In the exposure method according to the present invention, since the correction exposure pattern is exposed simultaneously with the main pattern to be originally exposed to the resist, it is possible to cope with a change in the exposure sensitivity of the main pattern based on the correction exposure pattern. The correction exposure amount can be quantitatively obtained for each resist, thereby enabling highly accurate pattern exposure.

Further, since the exposure apparatus according to the present invention has a dedicated exposure means for the correction exposure, the conditions of the exposure means of the exposure apparatus main body can be set so as to be suitable for the correction exposure, or after the correction exposure, Since there is no need to set conditions so as to match the original pattern exposure, a decrease in exposure throughput can be effectively prevented.

Further, since the other exposure apparatus according to the present invention has means for heating the resist, it is possible to form a correction exposure pattern and then heat the correction exposure pattern so that the resist is not heated. The change in the film thickness of the correction exposure pattern due to the change in the exposure sensitivity of the resist can be increased as compared to Therefore, if the correction exposure amount is determined based on the film thickness of the correction exposure pattern,
It becomes possible to perform pattern exposure with higher precision than when no heating is performed.

[0018]

Embodiments of the present invention (hereinafter, referred to as embodiments) will be described below with reference to the drawings.

(First Embodiment) FIG. 1 shows a first embodiment of the present invention.
FIG. 4 is a schematic diagram showing an electron beam exposure apparatus used for producing a photomask according to the embodiment. This device has an acceleration voltage of 50
It is a keV variable shaping type electron beam exposure apparatus. In addition,
Although a backscattered electron detector actually exists as in the conventional apparatus, it is omitted because it does not relate to the description of the present invention. That is, this apparatus is basically the same as the conventional apparatus except that the film thickness measuring device 14 is provided.

In FIG. 1, reference numeral 1 denotes an electron gun, and an electron beam 2 emitted from the electron gun 1 is formed by a first shaping aperture 3, a first beam deflection system 4, a second shaping aperture 5, and a second shaping aperture 5.
The sample 10 placed on the stage 9 via the beam deflection system 6, the third beam deflection system 7, and the fourth beam deflection system 8
Is irradiated.

The sample 10 includes a quartz substrate 10q, a Cr film 10
c, the resist 10r is sequentially laminated. In the figure, reference numeral 10s denotes a region where a sensitivity measurement pattern is formed. The resist 10r has a thickness of 0.5 μm
The acetal-based chemically amplified positive resist is used. Since the reaction of the acetal-based chemically amplified positive resist proceeds even at room temperature, its film thickness decreases immediately after exposure. In the present embodiment, the correction exposure amount is determined from a change in the film thickness, as described later, so that such characteristics do not pose any problem.

The shape of the electron beam 2 is determined by the first and second shaping apertures 3, 5 and the first to fourth beam deflection systems 4, 6 to 8. These 3 to 8 are controlled by the control circuit system 11. On the other hand, the stage 9 is controlled by the stage control system 12. Further, the control circuit system 11 and the stage control system 12 are connected to the control computer 1
3 is controlled. Note that the drawing does not show a lens system for forming an electron beam image on the resist 10r of the sample 10.

Then, a resist 1 is provided above the sample 10.
Measure the film thickness of the sensitivity measurement pattern exposed to 0r
A film thickness measuring device 14 is provided. Here, the membrane
As the thickness measuring device 14, a spectral interference reflectance measuring device is used. Figure
Medium, 14₁Is a white light source, 14 _TwoIs a beam splitter, 1
4_ThreeIs a focusing optical system, 14_FourIs a spectroscope, 14_FiveIs detective
Are shown respectively.

FIG. 2 is a plan view showing a pattern to be transferred to the resist 10c. In the figure, reference numeral 15 denotes a main circuit pattern constituting a chip, and 16 denotes a peripheral circuit pattern thereof. These patterns 15 and 16 (chip patterns) exist conventionally.

In this embodiment, a sensitivity measuring pattern 17 is further provided. The sensitivity measurement pattern 17 is arranged outside the main circuit pattern 15 for each one beam deflection area 18 of the charged electron beam exposure apparatus. The size of the sensitivity measurement pattern 17 is, for example, 50
μm square. In the figure, the sensitivity measurement pattern 17 is provided outside the peripheral pattern 15, but it is sufficient that the sensitivity measurement pattern 17 is provided in an area that is simultaneously exposed when exposing the chip patterns 15 and 16 in each beam deflection area 18. Individually,
Although a plurality of sensitivity measurement patterns 17 are used, a single stripe pattern connecting these may be used. In this case, only the region corresponding to the sensitivity measurement pattern 17 is irradiated with the electron beam.

Next, an exposure method in the method for producing a photomask of the present embodiment will be described with reference to the flowchart of FIG.

First, each beam deflection area 18 is sequentially scanned with the electron beam 2, and the chip pattern 1 is placed on the resist 10r.
The patterns 5, 16 and the sensitivity measurement pattern 17 are exposed (step S1). Here, the exposure amount is 20 μC / cm ² and the exposure time is 10 hours.

Next, the film thickness (resist film thickness) of the resist 10r at the portion where the sensitivity measurement pattern 17 is exposed is obtained by using the film thickness measuring device 14 (step S2). FIG. 4 shows the resulting resist film thickness of each beam deflection area after exposure. Here, the resist film thickness is determined after exposing all the beam deflection regions 18. Note that the timing for obtaining the resist film thickness is not limited to this as described later.

Next, a corrected exposure amount is determined from the film thickness of the resist 10r and a previously determined resist film thickness / exposure amount table (step S3). FIG. 5 shows the resist film thickness obtained in advance.
7 shows a relationship between a resist film thickness after exposure and an exposure amount, which is an exposure amount table. FIG. 6 is a diagram showing the relationship between the beam deflection area and the corrected exposure amount obtained from FIG. 4 which is the measurement result and FIG. 5 which is the resist film thickness / exposure amount table. The correction exposure amount is obtained from the difference between ²⁰ μC / cm ² and the actual exposure amount. From the figure, it can be seen that the correction exposure amount is larger for the first exposure, and the resist sensitivity is deteriorated.

Next, based on FIG.
A predetermined amount of the electron beam 2 is again irradiated on the resist 10r where the chip patterns 15 and 16 and the sensitivity measurement pattern 17 have been exposed, and correction exposure is performed (step S4). Here, the electron beam 2 is applied to the portion where each pattern is exposed so that the electron beam 2 is surely irradiated.
Correction exposure is performed by blurring to a diameter of about 0 μm.

Next, as in step 2, the variation in the resist film thickness is determined by determining the film thickness of the resist 10r where the sensitivity measurement pattern 17 has been exposed (step S5).

Next, it is determined whether or not the variation in the resist film thickness falls within a predetermined range (step S6).
As a result, if it is within the predetermined range, the exposure is completed, and if not, steps S3 to S5 are performed until the exposure is completed.
repeat. In this way, the resist film thickness becomes uniform as shown in FIG. 7, and it becomes possible to perform correction exposure with the optimum exposure amount.

Thereafter, the resist 10r is developed as usual, and the Cr film 1 is developed using the remaining resist 10r as a mask.
By etching 0c, a photomask having the chip patterns 15, 16 and the sensitivity measurement pattern 17 is completed.

As described above, in the present embodiment, a change in the sensitivity of the resist 10r can be quantitatively evaluated based on the thickness of the resist 10r where the sensitivity measurement pattern 17 has been exposed. Exposure can be performed.

Moreover, without developing the resist,
Since it can be quantitatively evaluated by in-situ observation (in-situ), changes in the sensitivity of each lot of the resist and changes in the resist sensitivity due to the processing conditions before exposure can be accurately performed without reducing the exposure throughput. You can ask for it.

In general, even if the resist (sample) has the same standard, there is a variation. However, even if there is a change in the resist sensitivity due to such variation, pattern exposure with high accuracy can be performed. Further, even if there is a change in resist sensitivity due to a process variation such as a difference in the number of days after resist application, pattern exposure with high accuracy can be performed.

In this embodiment, the acceleration voltage is 50 ke
Although the case of the variable-shaped electron beam exposure apparatus of V has been described, the present invention is not limited to the type of the electron beam exposure apparatus. For example, a CP-type electron beam exposure apparatus, a batch transfer type electron beam exposure apparatus Also applicable to
Further, even if the acceleration voltage is 100 keV, there is no problem.

In the present embodiment, the resist film thickness of all the beam deflection regions 18 is obtained after scanning all the beam deflection regions 18 with the electron beam 2. By repeating the process of obtaining the resist film thicknesses of the beam deflection regions 18 after the exposure of 18, the resist film thicknesses of all the beam deflection regions 18 may be obtained. Alternatively, the correction exposure may be performed by obtaining the resist film thickness not only for all the beam deflection regions 18 but only for a part thereof, for example, only for the odd-numbered beam deflection regions 18.

(Second Embodiment) This embodiment is different from the first embodiment in that the relationship between the contrast of the latent image of the resist 10r in the portion where the sensitivity measurement pattern 17 has been exposed and the exposure amount is determined in advance. In this case, the correction exposure amount is obtained.

When the resist 10r is irradiated with an electron beam, the photosensitive agent is decomposed at the irradiated portion to generate an acid, and the conductivity (electric resistance) of the portion changes. There is a one-to-one relationship between the degree of conductivity and the amount of electron irradiation (exposure).
Therefore, if the relationship between the degree of conductivity and the amount of exposure is determined in advance instead of the resist film thickness, effects such as high-precision pattern exposure can be obtained as in the first embodiment.

The degree of conductivity can be determined as follows. As the conductivity increases, the resist 10r is less likely to be charged. Usually, it becomes easier to be negatively charged.
Therefore, when the latent image is irradiated with an electron beam and the amount of secondary electrons generated at that time is measured, as shown in FIG. The contrast C2 / C1 increases with the image. Therefore, the degree of conductivity can be determined by the contrast C2 / C1.

Alternatively, the change in the resist sensitivity can also be obtained by measuring the distance L (see FIG. 8A) between two positions where the peak of the secondary electron amount is detected.

The contrast C2 / C1 and the distance L can be easily obtained by a conventional measuring technique. For example, there is a method of detecting secondary electrons. FIG. 9 shows a configuration of an electron beam exposure apparatus for obtaining the contrast C2 / C1 and the distance L by this method. 1 are given the same reference numerals as in FIG. 1, and detailed description is omitted.

The electron beam exposure apparatus of the present embodiment has a first
The exposure auxiliary chamber 2 for measuring the contrast C2 / C1 and the distance L is used as the exposure apparatus body of the embodiment.
0 is connected. The auxiliary exposure chamber 20 includes an electron gun 21, a beam deflection system 22, and a secondary electron detector 23.

After the exposure by the electron beam 2, the sample 10 is moved to the auxiliary exposure chamber 20, where the measurement electron beam 24 emitted from the electron gun 21 scans the surface of the sample 10 by the beam deflection system 22, and at this time, The generated secondary electrons 25 are detected by the secondary electron detector 23, and the contrast C2 / C1 and the distance L are obtained based on the detection result. Thereafter, the secondary electrons 25 are returned to the exposure apparatus main body and corrected exposure is performed.

The acceleration voltage of the electron beam 24 is 80
0 eV and the range in the resist 10r is 50 n
m. If the acceleration voltage is 1 keV or less, the adverse effect of exposure of the resist 10r by the electron beam 24 can be avoided. Alternatively, by applying a voltage to the sample 10 to lower the landing energy of the electron beam 24, the adverse effect of the exposure can be avoided.

(Third Embodiment) FIG. 10 is a schematic view showing an electron beam exposure apparatus used for producing a photomask according to a third embodiment of the present invention. 1 are given the same reference numerals as in FIG. 1, and detailed description is omitted.

This embodiment is different from the first embodiment in that correction exposure is performed using ultraviolet rays. To achieve this, the electron beam exposure apparatus of the present embodiment is:
The exposure apparatus according to the first embodiment is used as an exposure apparatus main body, and an exposure auxiliary chamber 30 that can irradiate the sample 10 with ultraviolet light is connected to the exposure apparatus main body.

In the auxiliary exposure chamber 30, an ultraviolet light source 31, a lens 32 and a film thickness measuring device 14 are provided. The ultraviolet light source 31 emits an ultraviolet light beam 34 having a wavelength of 240 nm. The correction with the ultraviolet light beam 34 is preferably performed by blur exposure similarly to the first embodiment.

In this embodiment, the same effects as in the first embodiment can be obtained. Furthermore, according to the present embodiment, since the correction exposure is performed by the dedicated ultraviolet light beam 34, the beam intensity and the like of the electron beam 2 are adjusted so as to match the correction exposure, and after the correction exposure, the electron beam 2 matches the original pattern exposure. As described above, there is no need to adjust the beam intensity or the like, so that a decrease in exposure throughput can be effectively prevented.

In the second embodiment, the correction exposure can be performed by using the ultraviolet rays as in the present embodiment. In this case, the electron gun 21 and the like in the auxiliary exposure chamber 20 are changed to the ultraviolet light source 31 and the like.

(Fourth Embodiment) FIG. 11 is a schematic view showing an electron beam exposure apparatus used for producing a photomask according to a fourth embodiment of the present invention. 1 are given the same reference numerals as in FIG. 1, and detailed description is omitted.

The present embodiment differs from the first embodiment in that the resist thickness is measured after selectively heating the resist 10r where the sensitivity measurement pattern 17 has been exposed. In order to realize this, the electron beam exposure apparatus according to the present embodiment employs the exposure apparatus body of the first embodiment as an exposure apparatus main body, and can selectively irradiate a desired region of the resist 10r with the infrared beam 43. 40 are connected. In the auxiliary exposure chamber 40, an infrared light source 41, a lens 42, and a film thickness measuring device 14 are provided.

Next, the exposure method in the method for producing a photomask of the present embodiment will be described with reference to the flowchart of FIG.

First, the chip pattern 1 is formed on the resist 10r.
The patterns 5, 16 and the sensitivity measurement pattern 17 are exposed (step S11). The steps so far are the same as in the first embodiment.

Next, the sample 10 is transferred to the exposure assisting chamber 40, and the resist 10 in the portion where the sensitivity measurement pattern 17 is exposed is exposed.
r is selectively irradiated with an infrared beam 43 and heated (step S12). The spot diameter of the infrared beam 43 is 50
μm. The heating temperature is controlled by the output of the infrared beam 43 and the irradiation time.

When the resist 10r is irradiated with the infrared beam 43, the temperature of the irradiated portion rises. When the temperature rises, the chemical reaction in the resist 10r is accelerated. Specifically, the diffusion of the acid and the accompanying decomposition of the inhibitor are promoted. As a result, as compared with the first embodiment, the film thickness of the resist 10r with respect to the change in the exposure amount increases.

Next, in the same manner as in the first embodiment, the thickness of the resist 10r and the corrected exposure amount in the portion where the sensitivity measurement pattern 17 has been exposed are obtained (step S13). At this time, in step 12, since the film thickness of the resist 10r with respect to the change in the exposure amount is large, a more accurate corrected exposure amount can be obtained. As a result, pattern exposure with higher precision can be performed as compared with the first embodiment.

Next, the sample 10 is returned to the exposure apparatus main body, and the first
Correction exposure is performed in the same manner as in the first embodiment (step S1).
4). Steps S15 and S16 thereafter are the same as steps S5 and S6 shown in FIG.

In this embodiment, the sensitivity measurement pattern 17
Although the infrared beam 43 is selectively irradiated on the exposed portion of the resist 10r, the entire resist 10r may be irradiated with the infrared beam 43 in order to increase the exposure throughput. However, the adverse effect of the selective irradiation on the chip pattern is smaller.

In this embodiment, the electron beam 2 is used for the correction exposure, but the ultraviolet beam 33 may be used as in the third embodiment. Further, the method of obtaining the corrected exposure amount after heating the resist according to the present embodiment can be applied to the second embodiment.

The present invention is not limited to the above embodiment. For example, in the above embodiment, the case where a photomask is formed has been described.
The present invention can also be applied to a mask used when etching an insulating film or a metal film formed on a wafer or GaAs.

The present invention is also applicable to an exposure method / apparatus using other charged beams such as an ion beam in addition to an electron beam.

In addition, various modifications can be made without departing from the spirit of the present invention.

[0065]

As described in detail above, according to the present invention, a correction exposure amount corresponding to a change in resist sensitivity can be quantitatively obtained for each sample, so that a mask having a highly accurate pattern can be easily obtained. It can be realized.

[Brief description of the drawings]

FIG. 1 is a schematic view showing an electron beam exposure apparatus used for producing a photomask according to a first embodiment of the present invention.

FIG. 2 is a plan view showing a pattern transferred to a resist of the sample of FIG. 2;

FIG. 3 is a flowchart for explaining an exposure method in the photomask forming method according to the first embodiment;

FIG. 4 is a view showing a resist film thickness after exposure of each beam deflection area.

FIG. 5 is a table showing a relationship between a resist film thickness after exposure and an exposure amount, which is a table of a resist film thickness and an exposure amount obtained in advance.

FIG. 6 is a diagram showing a relationship between a beam deflection area and a corrected exposure amount obtained from FIG. 4 which is a measurement result and FIG. 5 which is a resist film thickness / exposure amount table.

FIG. 7 is a diagram showing a distribution of a resist film thickness after correction exposure.

FIG. 8 is a view for explaining a method of irradiating a resist with electrons and evaluating a degree of conductivity in a portion where conductivity is changed due to decomposition of a photosensitizer at an irradiated portion to generate an acid.

FIG. 9 is a schematic view showing an electron beam exposure apparatus used for producing a photomask according to a second embodiment of the present invention.

FIG. 10 is a schematic view showing an electron beam exposure apparatus used for producing a photomask according to a third embodiment of the present invention.

FIG. 11 is a schematic view showing an electron beam exposure apparatus used for producing a photomask according to a fourth embodiment of the present invention.

FIG. 12 is a flowchart for explaining an exposure method in a photomask forming method according to a fourth embodiment;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Electron gun 2 ... Electron beam 3 ... 1st shaping aperture 4 ... 1st beam deflection system 5 ... 2nd shaping aperture 6 ... 2nd beam deflection system 7 ... 3rd beam deflection system 8 ... 4th beam deflection system 9 ... Stage 10 ... Sample 11 ... Control circuit system 12 ... Stage control system 13 ... Control computer 14 ... Film thickness measuring device 15 ... Main circuit pattern 16 ... Peripheral circuit pattern 17 ... Sensitivity measurement pattern 18 ... Beam deflection area 20 ... Exposure auxiliary chamber DESCRIPTION OF SYMBOLS 21 ... Electron gun 22 ... Beam deflection system 23 ... Secondary electron detector 24 ... Electron beam 25 ... Secondary electron 30 ... Exposure auxiliary chamber 31 ... Ultraviolet light source 32 ... Lens 33 ... Ultraviolet beam 40 ... Exposure auxiliary chamber 41 ... Infrared light source 42 ... Lens 43 ... Infrared beam

Continuation of the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat II (reference) H01L 21/30 541S 541M (72) Inventor Hideaki Abe 8 Shinsugita-cho, Isogo-ku, Yokohama-shi, Kanagawa Pref. F term (reference) 2H095 BB10 BB11 BB32 5F046 AA08 AA09 AA22 BA07 DA02 DA26 DB14 5F056 AA17 AA31 CB11 CD11

Claims (8)

[Claims] 1. A photomask having a main pattern and a correction exposure pattern formed in a region different from the region where the main pattern is formed. 2. A main pattern and a second pattern in a first region of a resist.
Exposing a correction exposure pattern to each of the regions, obtaining a correction exposure amount based on the correction exposure pattern, and forming the main pattern and the second region in the first region based on the correction exposure amount. Exposing each of the correction exposure patterns again to the region (a). 3. The exposure method according to claim 2, wherein the correction exposure amount is an exposure amount necessary for correcting a change in an optimum exposure amount corresponding to a change in exposure sensitivity of the resist. . 4. The exposure method according to claim 2, wherein the correction exposure amount is obtained based on a film thickness of the resist at a portion where the correction exposure pattern is exposed. 5. The correction exposure amount according to claim 2, wherein when the correction exposure pattern is irradiated with a charged beam, the correction exposure amount is obtained based on charged particles generated in the correction exposure pattern. Exposure method. 6. An exposure apparatus main body for exposing a desired pattern on a resist, a means for obtaining a correction exposure amount based on the pattern exposed on the resist by the exposure apparatus main body, and a means for performing correction exposure, An exposure apparatus comprising: an exposure auxiliary chamber connected to the exposure apparatus main body. 7. The exposure apparatus according to claim 6, wherein the means for performing the correction exposure irradiates the resist with ultraviolet rays or X-rays. 8. An exposure apparatus main body for exposing a desired pattern on a resist, a means for obtaining a correction exposure amount based on the pattern exposed on the resist by the exposure apparatus main body, and a means for heating the resist. And an exposure auxiliary chamber connected to the exposure apparatus main body.