JP2000260683A - Apparatus for manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a semiconductor device which uses a charged particle beam reduction transfer optical system in vacuum or an atmosphere under reduced pressure, is provided with a high-speed and high-rigidity stage and can precisely transfer a circuit pattern written on a mask onto a wafer. SOLUTION: This apparatus for manufacturing a semiconductor device has a heat sink 10 for cooling a sliding section transferring force from a driving source to stages by friction and the driving source in a stage mechanism for driving the stages 17, 1 provided with means 19, 3 for holding a wafer 18 or a mask 2 by using a friction drive mechanism in vacuum or an atmosphere under reduced pressure. Further, there is provided a heater 5 for making a sample and the holding means to a required temperature according to a temperature sensor 4 provided on the means for holding a wafer 18 or a mask 2.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing apparatus for reducing and transferring a desired semiconductor device circuit pattern drawn on a mask onto a wafer by a semiconductor lithography technique.

[0002]

2. Description of the Related Art In recent years, circuit line widths required for semiconductor devices have become increasingly narrower with the increase in integration of LSIs (Table 1). In the manufacture of these semiconductor devices, g-line, i-line, or single-wavelength light (KrF, Ar
F) or the like as a light source, and after dozens of types of original image patterns (reticles or masks) on which desired device circuit patterns are formed are highly accurately aligned with the wafer,
Means is adopted in which an image is transferred to an exposure area on a wafer after being reduced to one fifth or one fourth. Conventionally, due to the optical resolution limit derived from the wavelength of light, an exposure apparatus using a soft X-ray having a wavelength of about 1 nm as a light source for a pattern of 1 μm or less, and an electron beam direct writing apparatus, etc., are used in optical lithography. There has been debate that it will be replaced. With the progress of optical lithography technology, it is expected that the first generation of 1G DRAM and even 4G DRAM will be able to be sustained, but it is not a good idea considering the size of technical issues and the time that this technology can be used .

In order to solve the above-mentioned problems, Japanese Patent Application No. Hei 9-3
764, a charged particle beam transfer optical system based on an unconventional concept has been proposed, and an exposure apparatus using the system has been developed. Japanese Patent Application No. 9-3765
In an exposure apparatus using a charged particle beam reduction transfer optical system as proposed in (1), charged particles selectively reflected on a mask are guided onto a wafer for exposure. That is, a desired circuit pattern provided on a silicon substrate on which a material selected in consideration of the reflection efficiency of charged particles is used by using a fine processing technique such as an electron beam direct writing apparatus or the like as a mask. Becomes This mask fabrication is not impossible with current technology, given that it is reduced to a quarter and transferred onto a wafer.

[Table 1]

[0004]

The precision specifications required for a reflection type mask used in an exposure apparatus using a charged particle beam reduction transfer optical system as proposed in Japanese Patent Application No. 9-3765 are as follows. As can be seen from Table 1, it is very severe.

[0005] Therefore, the problem to be solved by the present invention is:
This is to prevent the positional accuracy of the circuit pattern from deteriorating due to the thermal expansion of the mask. Considering the use of a silicon substrate (wafer) which is also advantageous in terms of process as the substrate of the reflective mask, since the linear thermal expansion coefficient of silicon is 2.4 ppm, the area of 100 mm square is 0.24 μm / ° C. Will change at a rate of Assuming the case of a 4G DRAM (Table 1), if the temperature change occupies the entire positional accuracy of the pattern, the allowable range of the temperature change is 0.1 ° C. However, the values shown in Table 1 usually indicate that the mask is set at 50% for error distribution in the case of 1/4 reduction, and the temperature change share is one of the error factors among them. In practice, the allowable error amount for the temperature change becomes more severe.

Another problem to be solved by the present invention is to provide a high-speed and relatively low-speed scanning system for relatively scanning a mask and a wafer around an optical system for irradiating a charged particle beam in a vacuum.
This is a highly rigid stage. If a drive source is installed near the stage in order to reduce weight and reduce inertia and enhance responsiveness, it is conceivable to use an ultrasonic motor composed of piezo or the like from the viewpoint of non-magnetism. When the vibrator of the ultrasonic motor is driven to generate a traveling wave in a direction parallel to the stage guide, the force transmitted by the frictional force moves the stage member with which the vibrator is in contact. By changing the driving frequency of the vibrator, the stage member is driven in a desired direction and at a desired speed.
It becomes possible to control. Therefore, the frictional force generated between the vibrator of the ultrasonic motor and the stage member plays an important role, but there is a possibility that the frictional force changes over time and the traveling accuracy of the stage deteriorates. is there.
This may be caused by thermal distortion caused by heat generation of the ultrasonic motor itself, abrasion of a contact portion between the vibrator and the guide, and the like.

In view of the above, the present invention uses a charged particle beam reduction transfer optical system in a vacuum or reduced-pressure atmosphere, has a high-speed and high-rigidity stage, and has a circuit pattern drawn on a mask with high precision. It is an object of the present invention to provide an apparatus for manufacturing a semiconductor device capable of transferring an image onto a wafer.

[0008]

In order to solve the above-mentioned problems, a first means of the present invention comprises a sample holding means for detachably holding a sample in a vacuum or reduced-pressure atmosphere, and has a flat surface. A stage capable of freely scanning, a stage guide for guiding the stage in at least two axes orthogonal to each other, and a friction drive mechanism for scanning the stage along the stage guide. In the stage mechanism, it is possible to provide a heat sink for cooling the sliding portion and the drive source of the friction drive mechanism portion on an attachment member of the friction drive mechanism portion, and to cool the slide portion and the drive source. Based on temperature information from a temperature sensor provided in the sample holding unit, at least the sample and the sample holding unit of the sample holding unit are set at an arbitrary temperature. There is provided an apparatus for manufacturing a semiconductor apparatus that includes a heater that can be Yutakaka.

According to a second aspect of the present invention, there is provided a stage having sample holding means for detachably holding a sample in a vacuum or reduced-pressure atmosphere and capable of freely scanning a plane. A stage guide for guiding the stage in at least two orthogonal trajectories, and a friction drive mechanism for scanning the stage along the stage guide; An ultrasonic motor fixed to a member provided with the stage guide for driving along the driving source is used as a driving source, and a desired frictional force is generated between a driving force generating portion of the ultrasonic motor and the stage. Therefore, the ultrasonic motor can be moved in a direction perpendicular to the stage guide, and the ultrasonic motor is A screw for pressing the stage guide with a more constant force, a torque sensor capable of measuring the torque of the screw, and releasing the lock so that the screw can be fixed at a desired position or freely rotated. A semiconductor device manufacturing apparatus, comprising: a screw lock mechanism capable of performing the following operations; and a pressurizing adjustment mechanism including a rotation drive mechanism for selectively releasing the screw lock mechanism and rotating the screw according to the torque sensor. To provide.

Here, the sliding member of the friction drive mechanism may be made of hard ceramics, and the sliding surface of the sliding member may be coated with a conductive metal having a solid lubricating action.

Further, the sliding member of the friction drive mechanism is T
It may be made of at least one or more types of hard ceramics containing i, Si, and Al and composed of parts.

Further, in the sliding member of the friction drive mechanism, the conductive metal having a solid lubricating action coated on the sliding surface may be gold or silver.

According to a third aspect of the present invention, there is provided a light source for irradiating a charged particle beam in a vacuum or reduced-pressure atmosphere, and a first sample holder for detachably holding the first sample. A first stage having means and capable of freely scanning in a plane; and a second sample holding means for detachably holding a second sample, and freely scanning in a plane. And a charged beam reflected on the first sample surface among the charged beams incident on the first sample surface on the first stage. 2 was scanned from the light source by scanning the electron optical system having an optical axis bent so as to be incident on the sample surface and the first stage and the second stage in synchronization with each other. First sample by charged particle beam A circuit pattern of order provided a semiconductor device, there is provided an apparatus for manufacturing a semiconductor device characterized by comprising a stage controller for reducing transfer to a desired position on the second sample.

Still further, in a fourth aspect of the present invention, the first stage and the second stage are formed on the same plane, and the electron optical system having the bent optical axis includes the first stage. An object of the present invention is to provide an apparatus for manufacturing a semiconductor device in which the direction of a charged particle beam reflected by a sample surface is changed by 180 degrees and guided again onto the second sample surface.

Still further, according to a fifth aspect of the present invention, there is provided a light source for irradiating a charged particle beam in a vacuum or reduced pressure atmosphere, and a first sample for detachably holding the first sample. A first stage having holding means and capable of freely scanning in a plane; and a second sample holding means for detachably holding a second sample, and freely scanning in a plane. An optical axis such that a charged beam incident on a first sample surface on the first stage is incident on a second sample surface on the second stage. By scanning the electron optical system having a bent shape, the first stage and the second stage in synchronization with each other, a charged particle beam emitted from the light source is provided on the first sample in advance. Circuit pattern of semiconductor device , A stage control device for reducing transfer to a desired position on the second sample, temperature information from a first temperature sensor provided in the first sample holding means, and the first sample The first sample holding unit of the first sample holding unit can be set to an arbitrary temperature in accordance with the dimensional accuracy of the circuit pattern of the semiconductor device provided in advance.
The temperature of the sample holding unit of the second sample holding unit can be set to an arbitrary temperature based on the temperature control unit and the temperature information from the second temperature sensor provided in the second sample holding unit. And a second temperature control means. Further, in the above invention, a cooling means for cooling a plate-like member formed in a closed vessel for realizing a vacuum or reduced-pressure atmosphere and an inlet of a pump for exhausting may be provided.

As described above, according to the first means of the present invention, the slide of the stage driving mechanism capable of freely holding a sample in a vacuum or reduced-pressure atmosphere and scanning the plane freely. It acts to maintain the sample at a desired temperature while cooling the unit and the drive source.

Further, according to the second means of the present invention, in a vacuum or reduced-pressure atmosphere, a sample is detachably held and a stage is used as a driving source of a stage capable of freely scanning a plane. Acts to make the thrust of the sonic motor constant.

Further, the slide member of the drive mechanism is made of hard ceramics, and its surface is coated with a conductive metal having a solid lubricating action, so that the stage can operate smoothly and for a long time even in a vacuum or reduced pressure atmosphere. Acts to be.

In the third means of the present invention, a desired circuit pattern drawn on a mask detachably held on a mask stage is irradiated with a charged particle beam as an irradiation light source in a vacuum or reduced pressure atmosphere. A desired pattern is obtained on the wafer by controlling the mask stage and the wafer stage in synchronization with each other by guiding the wafer stage through the electron optical system whose optical axis is bent and detachably holding the wafer stage. To act.

The fourth means of the present invention uses an electron optical system having a bent optical axis such that the scanning surface of the mask stage and the scanning surface of the wafer stage become the same in a vacuum or reduced-pressure atmosphere. By doing so, it works so as to facilitate manufacture and adjustment.

Further, in the fifth means of the present invention, by controlling the mask holding temperature in accordance with the dimensional accuracy of the mask, it is possible to reduce the influence of a mask manufacturing error and a change in the mask temperature caused by the transfer. Also, it acts so as to transfer onto a wafer while being controlled at a desired temperature.

Further, the degree of vacuum and the quality of vacuum in the container are reduced by cooling means for cooling a plate-like member inside the closed container for realizing a vacuum or reduced-pressure atmosphere and an inlet of a pump for exhausting. Acts to improve.

[0023]

FIG. 1 is a configuration diagram of an apparatus for manufacturing a semiconductor device according to an embodiment of the present invention.

According to the first means of the present invention, a mask 2 is placed on a mask stage 1 housed in a closed container (not shown) for making a vacuum or reduced-pressure atmosphere.
Is transported onto the holding means 3 by a transport means (not shown). The transferred mask 2 is fixed by the holding means 3 by an electrostatic chuck or the like. Although not shown here, means for mechanically clamping the end face of the mask may be used in order to prevent deformation of the mask pattern due to foreign matter or the like adhering to the back surface of the mask.

In the top view of the mask holding portion of the present invention shown in FIG. 3, a temperature sensor 4 for measuring the temperature of the back surface of the transferred mask 2 and a mask 2 are provided on the holding means 3.
Is provided with a heater 5 for controlling the temperature of the entire rear surface of the heater. Although not shown here, another heat sink and another heater for controlling the temperature of the mask surface by radiation may be provided on the inner surface of the closed container facing the mask.

In the sectional side view of the semiconductor device manufacturing apparatus according to the embodiment of the present invention shown in FIG. 2, the mask stage 1 has a stage guide 6 such as a cross roller guide.
The trajectory is determined by a stage guide 7 (not shown), and the intermediate block 8 and the stage base 9
Has an ultrasonic motor 1 for driving each stage
1 is attached. Here, in the configuration diagram of FIG. 1, in order to eliminate heat generation of the ultrasonic motor itself (not shown) and heat generation of a sliding portion that generates a driving force, water whose temperature is controlled outside a closed container (not shown) is removed. A heat sink 10 is provided to remove heat by introduction. In addition, in consideration of leakage in the closed container, an inert liquid such as Freon substitute or Fluorinert may be used as the refrigerant.

In the second means of the present invention, as shown in the side sectional view of FIG. 2, the mask 2 is held by mask holding means 3, and a stage for scanning these along a predetermined orbit. It is fixed to the intermediate block 8 via the guide 6. Further, the vibrating part 12 of the ultrasonic motor 11 fixed to the intermediate block 8 is in contact with a part of the stage 1 and generates a traveling wave of a predetermined frequency in the contact part, so that a desired direction can be obtained in a desired direction. Speed driving is possible. Therefore, the fixed portion of the ultrasonic motor 11 is made movable by a small guide mechanism 12 such as an LM guide, and is pressed by a feed screw mechanism 13 from the back surface of the ultrasonic motor 11 toward a contact portion with the stage. . The feed screw mechanism 13 includes a screw torque sensor 14 for monitoring the pressing force and a lock / unlock mechanism (not shown) that can be released so as to be fixed or freely rotatable at a predetermined position. further,
The feed screw mechanism 13 released by the lock / unlock mechanism is connected to the external power transmission mechanism 1 provided in the closed container 15.
6, the position of the ultrasonic motor 11 can be moved to a desired position according to the screw torque sensor 14.

The vibrating section 12 of the ultrasonic motor 11
The stage 1 including a contact portion with which a part of the stage 1 is in contact is scanned during the irradiation of the charged particle beam, and moves along the trajectory of the charged particle beam when transferring the pattern drawn on the mask 2 onto the wafer 18. It is necessary to be a non-magnetic material so as not to exert an influence, and to be a conductive material so that the potential is not locally distributed by charge-up. Therefore, a hard ceramic such as SiC or TiC is used as the material of the stage 1. In addition, a contact portion between the stage 1 and the vibrating portion 12 of the ultrasonic motor 11 is formed by depositing a non-magnetic metal having a solid lubricating action of gold or silver to provide lubrication.
Prevents heat generation and improves service life.

In the third means of the present invention, as shown in FIG. 1, in a mask stage 1 housed in a closed vessel (not shown) for making a vacuum or reduced pressure atmosphere, a mask 2 is shown in FIG. The wafer is conveyed onto the mask holding means 3 by an unconveyed conveying means. The transferred mask 2 is fixed by an electrostatic chuck or the like by the mask holding means 3. Although not shown here, a means such as mechanical clamping may be used in order to prevent deformation of the mask pattern due to foreign matter or the like attached to the back surface of the mask.

Similarly, on a wafer stage 17 housed in a closed container (not shown) for making a vacuum or reduced-pressure atmosphere, the wafer 18 is transferred onto the wafer holding means 19 by a transfer means (not shown). . The transferred wafer 18 is fixed by a wafer holding means 19 by an electrostatic chuck or the like. Although not shown here, a means such as mechanical clamping may be used in order to prevent deformation of the underlying pattern on the wafer due to foreign matter or the like attached to the back surface of the wafer.

An illumination optical system 21 for guiding a charged particle beam irradiated from an irradiation light source 20 for irradiating a charged particle beam of a desired size onto the mask 2, and a charged beam reflected on the mask 2. And a reduction transfer optical system 22 for reducing the particle beam to a desired size and guiding the particle beam to a desired position on the wafer 18. At this time, since the reduction optical system 22 is bent in order to reduce aberration, the mask stage 1 and the wafer stage 17 are configured not to be parallel but to face each other at a certain angle.

In the fourth means of the present invention, as shown in the sectional view of the semiconductor device manufacturing apparatus according to the embodiment of the present invention shown in FIG. In the mask stage 1 housed in a closed container not shown, the mask 2 is transferred onto the mask holding means 3 by a transfer means (not shown). The transferred mask 2 is fixed by an electrostatic chuck or the like by the mask holding means 3. Although not shown here, a means such as mechanical clamping may be used in order to prevent deformation of the mask pattern due to foreign matter or the like attached to the back surface of the mask.

Similarly, on a wafer stage 17 housed in a closed container (not shown) for making a vacuum or reduced-pressure atmosphere, the wafer 18 is transferred onto the wafer holding means 19 by a transfer means (not shown). . The transferred wafer 18 is fixed by a wafer holding means 19 by an electrostatic chuck or the like. Although not shown here, a means such as mechanical clamping may be used in order to prevent deformation of the underlying pattern on the wafer due to foreign matter or the like attached to the back surface of the wafer.

An illumination optical system 21 for guiding a charged particle beam irradiated from an irradiation light source 20 for irradiating a charged particle beam of a desired size onto the mask 2, and a charged beam reflected on the mask 2. And a reduction transfer optical system 22 for reducing the particle beam to a desired size and guiding the particle beam to a desired position on the wafer 18. At this time, a trajectory correcting / deflecting optical system 23 for correcting the trajectory is added to the reduction optical system 22 to guide the trajectory of the charged particle beam to the wafer stage 17 formed on the same plane as the mask stage 1. The orbit correcting / deflecting optical system 23 reduces the degree of freedom from the viewpoint of reducing aberrations, but makes designing difficult, but facilitates design and assembly around the stage.

In the fifth means of the present invention, referring to FIG. 1, a mask stage 1 in a closed vessel (not shown) for holding in a vacuum or reduced-pressure atmosphere, It is transported onto the mask holding means 3 by a transport means not shown. The transferred mask 2 is fixed by an electrostatic chuck or the like by the mask holding means 3. Further, as shown in FIG. 3, the temperature of the mask 2 can be controlled by a temperature control means 5 including a temperature sensor 4 and a heater provided in the mask holding unit. By the way, although not shown here, a means such as mechanical clamping may be used in order to prevent deformation of the mask pattern due to foreign matter or the like attached to the back surface of the mask.

Further, in FIG. 1, a wafer 18 is placed on a wafer holding means 19 by a transfer means (not shown) on a wafer stage 17 housed in a closed vessel (not shown) for holding in a vacuum or reduced pressure atmosphere. Transported to The transferred wafer 18 is stored in the wafer holding unit 1.
9 is fixed by an electrostatic chuck or the like. In addition, the temperature of the wafer 18 can be controlled by a temperature sensor (not shown) and a temperature control unit (not shown) provided in the wafer holding unit. Further, although not shown here, a means such as mechanical clamping may be used in order to prevent deformation of the underlying pattern on the wafer due to foreign matter or the like attached to the back surface of the wafer.

An illumination optical system 21 for guiding a charged particle beam emitted from an irradiation light source 20 for irradiating a charged particle beam of a desired size onto the mask 2, and a charged beam reflected on the mask 2. And a reduction transfer optical system 22 for reducing the particle beam to a desired size and guiding the particle beam to a desired position on the wafer 18.

In transferring a desired circuit pattern, the temperature of the mask 2 carried on the mask stage 1 is measured by a temperature sensor 4 as shown in FIG. The temperature of the mask is controlled by the temperature control means 5 so that the temperature is determined according to the known pattern position accuracy of the mask 2. Separately, the temperature of the wafer 18 transferred onto the wafer stage 17 is measured by a temperature sensor (not shown),
The temperature of the wafer 18 is set to a predetermined temperature by a temperature control means (not shown) so that the temperature is maintained during the exposure. Here, the temperature of the wafer 18 is set to a surrounding environmental temperature or a temperature at which an exposure apparatus such as a stepper is managed.

[0039]

As described above, according to the present invention, a lightweight and rigid stage which can be scanned at high speed in a vacuum or reduced-pressure atmosphere is provided, and the pattern position accuracy due to the thermal expansion of the mask and wafer during exposure is improved. The effect of reducing the influence of deterioration and the like can be obtained.

[Brief description of the drawings]

FIG. 1 is a perspective view showing a schematic configuration of an apparatus for manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a side sectional view of a semiconductor device manufacturing apparatus according to an embodiment of the present invention.

FIG. 3 is a top view of a mask stage used in the semiconductor device manufacturing apparatus of the present invention.

FIG. 4 is a perspective view showing a configuration of a semiconductor device manufacturing apparatus according to an embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Mask stage 2 Mask 3 Mask holding means 4 Temperature sensor 5 Heater 6 Stage guide 7 Stage guide 8 Intermediate block part 9 Stage base part 10 Heat sink 11 Ultrasonic motor 12 Small guide mechanism 13 Feed screw mechanism 14 Screw torque sensor 15 Hermetic container 16 External power transmission mechanism 17 Wafer stage 18 Wafer 19 Wafer holding means 20 Irradiation light source 21 Illumination optical system 22 Reduction transfer optical system 23 Orbit correction deflection optical system

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Kiyoji Hattori 1st Toshiba R & D Center, Komukai-shi, Kawasaki-shi, Kanagawa Prefecture (72) Inventor Kenichi Murooka Toshiba Komukai-shi, Kawasaki-shi, Kanagawa No. 1 in the Toshiba R & D Center, Inc. (72) Inventor Shigehiro Hara 1 in Komukai Toshiba-cho, Koyuki-ku, Kawasaki-shi, Kanagawa F-term (reference) 2H097 BA02 DA11 DB11 LA10 5F046 AA22 CC17 DA26 DB02 GA07 GA11 GA12 GA14 5F056 BA10 CB40 EA13 EA14 EA16

Claims (9)

[Claims] 1. A stage provided with a sample holding means for detachably holding a sample in a vacuum or reduced-pressure atmosphere and capable of freely scanning in a plane, wherein said stage is orthogonal to at least two axes. In a stage mechanism having a stage guide for guiding into a track and a friction drive mechanism for scanning the stage along the stage guide, for cooling a sliding portion and a drive source of the friction drive mechanism. The heat sink is provided on the mounting member of the friction drive mechanism, the sliding portion and the drive source can be cooled, and the sample and the sample can be cooled based on temperature information from a temperature sensor provided in the sample holding means. An apparatus for manufacturing a semiconductor device, comprising: a heater capable of keeping a temperature of a sample holding section of the sample holding means at an arbitrary temperature. 2. A stage provided with sample holding means for detachably holding a sample in a vacuum or reduced-pressure atmosphere and capable of freely scanning in a plane, wherein said stage is orthogonal to at least two axes. In a stage mechanism having a stage guide for guiding in a track and a friction drive mechanism for scanning the stage along the stage guide, the stage guide for driving the stage along the stage guide An ultrasonic motor fixed to a member provided with a drive source,
In order to generate a desired frictional force between the driving force generating portion of the ultrasonic motor and the stage, the ultrasonic motor is movable in a direction perpendicular to the stage guide, and the ultrasonic motor A screw for pressing the stage guide against the stage guide with a constant force, a torque sensor capable of measuring the torque of the screw, and releasing the lock so that the screw can be fixed at a desired position or freely rotated. Manufacturing a semiconductor device, comprising: a screw lock mechanism capable of turning on the screw; and a pressurizing adjustment mechanism including a rotation drive mechanism for selectively releasing the screw lock mechanism and turning the screw in accordance with the torque sensor. apparatus. 3. A stage provided with a sample holding means for detachably holding a sample in a vacuum or reduced-pressure atmosphere and capable of freely scanning in a plane, and said stage being orthogonal to at least two axes. In a stage mechanism having a stage guide for guiding into a track and a friction drive mechanism for scanning the stage along the stage guide, a sliding member of the friction drive mechanism is made of hard ceramic, 3. The apparatus according to claim 2, wherein the sliding surface of the sliding member is coated with a conductive metal having a solid lubricating action. 4. The sliding member of the friction drive mechanism is Ti, S
4. The semiconductor device manufacturing apparatus according to claim 2, wherein the component is made of at least one or more kinds of hard ceramics containing i and Al. 5. The sliding member of the friction drive mechanism,
4. The semiconductor device manufacturing apparatus according to claim 2, wherein the conductive metal having a solid lubricating action coated on the sliding surface is gold or silver. 6. A vacuum or decompressed atmosphere comprising a light source for irradiating a charged particle beam and first sample holding means for detachably holding a first sample, and freely scans within a plane. A second stage that includes a first sample stage that can perform scanning, a second sample holding unit that detachably holds a second sample, and that can freely scan in a plane; The charged beam reflected on the first sample surface among the charged beams incident on the first sample surface on the first stage is incident on the second sample surface on the second stage. An electron optical system with a bent optical axis,
By scanning the first stage and the second stage in synchronization with each other, the circuit pattern of the semiconductor device previously provided on the first sample by the charged particle beam emitted from the light source is changed to a second pattern. 2. A semiconductor device manufacturing apparatus, comprising: a stage control device for reducing and transferring the image to a desired position on the second sample. 7. A vacuum or reduced-pressure atmosphere including a light source for irradiating a charged particle beam and first sample holding means for detachably holding a first sample, and freely scans a plane. A first stage capable of performing scanning, a second stage including second sample holding means for detachably holding a second sample, and capable of freely scanning in a plane; The first stage and the second stage are configured on the same plane, and the electron optical system having the bent optical axis changes the direction of the charged particle beam reflected by the first sample surface by 180 degrees. A semiconductor device manufacturing apparatus, wherein the semiconductor device is guided on the second sample surface again. 8. A vacuum or reduced-pressure atmosphere including a light source for irradiating a charged particle beam and first sample holding means for detachably holding a first sample, and freely scans a plane. A second stage that includes a first sample stage that can perform scanning, a second sample holding unit that detachably holds a second sample, and that can freely scan in a plane; The charged beam incident on the first sample surface on the first stage is moved to the second stage on the second stage.
By scanning the electron optical system whose optical axis is bent so as to be incident on the sample surface and the first stage and the second stage in synchronization with each other, the charged light emitted from the light source is A stage control device for reducing and transferring a circuit pattern of the semiconductor device provided in advance on the first sample to a desired position on the second sample by the particle beam, and provided on the first sample holding means; In accordance with the temperature information from the first temperature sensor provided and the dimensional accuracy of the circuit pattern of the semiconductor device provided in advance on the first sample, the sample holding section of the first sample holding means is set to an arbitrary temperature. A first temperature control unit that can be used as a first sample control unit and a sample holding unit of the second sample holding unit based on temperature information from a second temperature sensor provided in the second sample holding unit. Any temperature is possible Apparatus for manufacturing a semiconductor device, characterized in that it comprises a second temperature control means. 9. A cooling device for cooling a local space on an inner surface of a sealed container for realizing a vacuum or reduced-pressure atmosphere and an inlet of a pump for exhausting. Terms 1, 2, 3, 4, 5, 6, 7
9. The semiconductor device manufacturing apparatus according to claim 8.