JP2000247437A - Substrate surface treatment device and method, surface conduction type electron source substrate and image forming device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable cutting-off of liquid on a substrate simultaneously at the time of pulling up the substrate from treatment liquid, and ensure an even surface treatment for a large sized substrate by additionally providing a substrate conveying means to a treatment tank capable of storing treatment liquid therein, and providing an air knife to a delivery outlet of the tank. SOLUTION: A substrate is held on a substrate cassette 24, then mounted at a fixed position 25 on a conveying means 13, and conveyed to the inside of a device by the means 13. The substrate cassette 24 is held toy a carrying robot 11 and sank in a treatment liquid 17 from a delivery inlet 18 of a treatment tank 16. By repeating the above steps while working a conveying means 14, the cassette 24 reaches a terminal end, and when the cassette 24 is held by a carrying robot 12, air knives 20, 21 mounted to a delivery outlet 19 of the tank 16 work. Thereafter, the substrate held by the cassette 24 is pulled up from a substrate treatment liquid 17 and the liquid on the substrate is cut off simultaneously therewith.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate surface treatment apparatus for performing a surface treatment of a substrate in manufacturing an electronic element such as a surface conduction electron source substrate. The present invention also relates to a method for treating a surface of a substrate. The present invention also relates to a surface conduction electron source substrate capable of emitting electrons from a plurality of arbitrary locations on a substrate manufactured by applying this surface treatment method. The present invention also relates to an image forming apparatus using a surface conduction electron source substrate.

[0002]

2. Description of the Related Art Conventionally, as a substrate surface treatment apparatus for performing surface treatment by immersing a substrate in a treatment liquid, for example, Japanese Patent Laid-Open No.
Japanese Patent No. 76507 describes a substrate surface treatment apparatus shown in FIG. This apparatus performs a wet process such as cleaning, etching, and resist stripping on a substrate used for a liquid crystal display or the like. In FIG. 9, reference numeral 112 denotes a cassette containing a plurality of substrates. The substrates are taken out one by one at regular time intervals in the loader unit 101 and are transported to the immersion processing unit 106 by the transport rollers 114. After being made vertical by the substrate direction changing unit 102, the substrate 113 is immersed in the single wafer immersion tank 105 for a certain period of time by the operation of the single wafer transfer system 104 and the transfer robot 115, and is leveled in the substrate direction changing unit 103. .
Subsequently, the substrate is spray nozzle 1
19 for rinsing. Subsequently, the substrate is washed with water 1
At 08, a water washing process is performed by the spray nozzle 119. Subsequently, the substrate is subjected to a water washing process by an ultrasonic washing machine 120 in an ultrasonic washing section 109. Subsequently, the substrate is dried by the air knife 121 in the drying unit 110. In the figure, reference numeral 118 denotes a lower tank for collecting a rinsing liquid or cleaning water. Thereafter, the substrate is unloaded by the unloader unit 111.
Is stored in another cassette 122.

Further, a manufacturing method for forming wiring on an electron source substrate by a printing technique is described in Japanese Patent Application Laid-Open No. 9-283060. This will be described with reference to FIG. First, FIG.
Element electrodes 132 and 133 are formed on a substrate 131 (outline not shown) as shown in FIG. Next, as shown in FIG. 8B, a conductive paste is printed and fired to form the lower wiring 140. Next, as shown in FIG. 8C, the insulating paste is printed and baked to form the strip-shaped insulating layer 142. Next, as shown in FIG. 8D, an insulating paste is printed and baked to form the intersection insulating layer 144.
To form Next, as shown in FIG. 8E, a conductive paste is printed and baked to form the upper wiring 145. Next, FIG.
A conductive thin film 134 is formed as shown in FIG. The conductive thin film is then subjected to an energization process called a forming process to form an electron emission portion. Further, in a process called activation, a process of increasing the amount of electron emission is performed by performing an energization process in an atmosphere containing an organic substance gas. Thus, the manufacture of the electron source substrate is performed.

[0004]

However, when the present inventors used a conventional surface treatment apparatus to produce a surface conduction electron source substrate, they had the following problems.

In a conventional immersion type surface treatment apparatus, a treatment tank for performing surface treatment and a portion for removing a treatment liquid from a substrate are separated. Therefore, after the substrate is pulled up from the processing liquid, the substrate is left with the processing liquid attached thereto while being transported to a portion where the processing liquid is removed. During this time, the reaction by the processing liquid proceeds on the substrate. In the case where the surface of the substrate has little irregularities and the substrate size is small, there is little unevenness in the processing liquid remaining on the surface of the substrate. However, as in the case of manufacturing a surface conduction electron source substrate, this is a substrate on which printed wiring is formed, and when the substrate size is large, the processing liquid accumulates in recesses between the wirings, and the surface of the substrate is In some cases, the processing solution remaining on the surface was uneven, resulting in uneven processing.

An object of the present invention is to provide a substrate on which printed wiring and the like are formed, and even when the substrate size is large.
An object of the present invention is to provide a substrate surface treatment apparatus capable of performing a surface treatment uniformly.

[0007] Further, as a processing liquid (hydrophobizing agent) for producing a surface conduction type electron source substrate, for example, an organosilicon compound represented by a silane coupling agent such as trimethylmethoxysilane, dimethyldimethoxysilane, methyltrimethoxysilane and the like. May be used. These organic silicon compounds can also be treated by immersing the substrate in a treatment solution, draining the solution, and allowing the solution to stand. But after draining,
For example, by performing heat treatment at about 80 ° C. to 150 ° C., fixation of bonds on the substrate surface and evaporation of unreacted compounds can be completed in a short time. Therefore, another object of the present invention is to provide a surface treatment apparatus having a more preferable configuration when an organic silicon compound or the like is used for such surface treatment.

[0008]

The present invention firstly provides a substrate surface treatment apparatus provided with a processing tank capable of storing a processing liquid therein, a substrate transfer means, and an air knife. A carry-in port for carrying in and a carry-out port for carrying out the substrate are provided, and the substrate carrying means has a function of carrying the substrate from the carry-in port into the processing bath, a function of moving the substrate inside the processing bath, The substrate is provided with a function of transporting the air from the processing port to the outside of the processing tank, and the air knife is provided at the processing port of the processing tank.

According to the substrate surface treatment apparatus of the present invention, the substrate can be drained at the same time as the substrate is pulled up from the treatment liquid. Therefore, surface treatment can be performed evenly on a large-sized substrate on which printed wiring is formed.

A second aspect of the present invention is a substrate surface treatment apparatus provided with a treatment tank capable of storing a treatment liquid therein, a substrate transfer means, an air knife, and a substrate heating means. A transfer port for loading and unloading the substrate is provided.The substrate transfer means has a function to transfer the substrate from the transfer port into the processing tank, a function to move the substrate inside the processing tank, and a function to transfer the substrate. It has the function of transporting the substrate out of the processing tank from the outlet and the function of passing the substrate to the substrate heating means.The air knife is provided at the exit of the processing tank. A substrate surface treatment apparatus is provided at the rear.

According to the substrate surface treatment apparatus of the present invention, the substrate can be drained at the same time as the substrate is pulled up from the treatment liquid. Therefore, surface treatment can be performed evenly on a large-sized substrate on which printed wiring is formed. Further, by the substrate heating means, the substrate can be heated subsequent to the immersion treatment, and more preferable treatment can be performed when an organosilicon compound is used as the treatment liquid.

The present invention also provides a method for treating a surface of a substrate, comprising dipping the substrate in a treatment solution containing an organosilicon compound, removing the substrate from the treatment solution, and simultaneously draining the substrate. is there. As a result, the surface treatment can be performed evenly on a large-sized substrate on which the printed wiring is formed.

The present invention is also characterized in that, after the substrate is immersed in a processing solution containing an organosilicon compound, the substrate is pulled up from the processing solution, and at the same time, the substrate is drained, and then the substrate is heated. This is a method for treating the surface of a substrate. As a result, the surface treatment can be performed evenly on a large-sized substrate on which the printed wiring is formed. Further, when an organosilicon compound is used for the treatment liquid, more preferable treatment can be performed. The present invention is also a surface conduction electron source substrate manufactured by the above-described substrate surface treatment method. According to the surface conduction electron source substrate of the present invention, a uniform surface treatment can be performed, so that an element film can be formed uniformly. Therefore, a surface conduction electron source substrate having uniform characteristics can be obtained.

According to another aspect of the present invention, there is provided an image forming apparatus comprising the above-mentioned surface conduction electron source substrate. According to the image forming apparatus of the present invention, it is possible to obtain an image forming apparatus without display unevenness.

[0015]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention relates to a method for forming an electronic element, a method for forming a liquid containing a material for forming various functional films such as a conductive film, particularly an aqueous liquid, on a functional film forming region provided on a substrate surface. When applied to form a functional film, it is preferably applied to a surface treatment for stabilizing or improving the applicability of the liquid to the surface by applying a hydrophobizing agent to the functional film forming region. Particularly, it is particularly suitable when the surface has irregularities as in the formation of the electron source substrate in the image forming apparatus, and the hydrophilic portion and the hydrophobic portion are finely mixed. In addition, in the formation of the electron source substrate, it is particularly suitable when a conductive thin film including an electron emitting portion provided between element electrodes is formed by a droplet applying method such as an inkjet method.

Hereinafter, the present invention will be described by taking the case of forming the electron source substrate as a representative example.

FIG. 1 illustrates a substrate surface treatment apparatus according to the present invention. In the surface treatment apparatus 10 of FIG.
Is for producing an electron source substrate, and has a pair of opposing device electrodes formed on a predetermined portion of the surface through, for example, the process of FIG. The substrate 24 is surface-treated after being held in the substrate cassette 24 so that the substrate 24 can be easily fixed to the transfer means or transferred by a transfer robot. Reference numeral 16 denotes a processing tank in which the processing liquid 17 can be stored at a depth at which the entire vertically held substrate cassette is immersed. Processing tank 1
6 has a carry-in port 18 and a carry-out port 19, and the carry-out port 19 is provided with air knives 20 and 21.
After the substrate is pulled out of the processing liquid, it is desirable that the liquid be removed by an air knife immediately. The mounting positions of the air knives 20 and 21 are adjacent to the liquid surface of the processing liquid 17 stored in the processing layer. Is preferred. However, when approaching too much, the processing liquid may scatter from the gas injected from the air knife. The attachment positions of the air knives 20 and 21 are preferably in a range from about 2 cm to about 20 cm from the liquid level of the processing liquid 17. The transfer means 14 is provided inside the processing tank 16, and a plurality of individual positions 26 for holding the substrate cassette are provided. 13 and 15 are transfer means for transferring the substrate outside the processing tank. These also have a plurality of individual positions 25 and 27 for holding the substrate cassette. 11 and 12 are transfer robots. The transfer robot 11 grasps the substrate cassette by the transfer unit 13, enters the inside through the transfer port 18 of the processing tank 16, and attaches the substrate cassette to the individual position 26 of the transfer unit 14. Further, the transfer robot 12 performs an operation of holding the substrate cassette by the transfer means 14, moving in and out of the processing tank 16 through the carry-out port 19, and attaching the substrate cassette to the individual position 27 of the transfer means 15.

Next, the operation of the surface treatment apparatus of the present invention will be described with reference to FIGS. As shown in FIG. 3A, the substrate is held in the substrate cassette, and the transfer means 13 is moved to the position 31.
It is attached to the upper fixed position. And the transport means 13
Is transported inside the apparatus. The substrate cassette transferred to the position 32 is gripped by the transfer robot 11. Then, as shown in FIG. 3B, the transfer means 14 is submerged in the processing liquid from the carrying-in port of the processing tank 16,
It is attached to a fixed position. By repeating the above operation while operating the transfer means 14, the substrate cassette reaches the position 34 as shown in FIG. When the transfer robot 12 grasps the substrate cassette at the position 34, the air knives 20, 21 attached to the carry-out port of the processing tank operate. Then, as shown in FIG. 4A, the substrate cassette is carried out to the position 35, whereby the substrate is pulled up from the processing liquid and the liquid is drained at the same time. If the moving speed of the substrate when passing through the air knife is too high, the liquid cannot be drained sufficiently. However, if it is too late, it takes time from when the substrate comes out of the surface of the processing liquid to when it reaches the air knife, which is not preferable. The moving speed of the substrate when passing through the air knife is about 0.5 cm / sec to 10
A range up to about cm / sec is preferred. Subsequently, FIG.
As described above, the transfer robot 12 attaches the substrate cassette at the position 36 to the fixed position on the transfer means 15. These operations are repeated, and as shown in FIG.
When it reaches the position 7, it is removed from the conveying means 15, and a series of surface treatments is completed.

FIG. 2 is a view showing another embodiment of the surface treatment apparatus of the present invention. In FIG. 2, in addition to the configuration of the apparatus shown in FIG.
2 are provided. A heating unit 23 is provided inside the heating chamber 22. As the heating means 23, an infrared heater, a warm air heater, or the like can be used.

The operation of the surface treatment apparatus shown in FIG. 2 is the same as that shown in FIG. 3 until the substrate cassette is set in the surface treatment apparatus, immersion treatment is performed in the treatment tank, and the immersion treatment is performed.
4 to 4, which is the same as the operation of the surface treatment apparatus of FIG. Thereafter, the substrate cassette is transported by the transporting unit 15 in FIG. During this time, the substrate is subjected to a heat treatment by the heating means 23. When the substrate cassette reaches the end of the transfer means 15, the substrate cassette is removed from the transfer means 15, and a series of surface treatments is completed.

In the apparatus described above, the processing tank 1 for the substrate 24 is used.
In 6, the processing surface is processed while being fixed perpendicular to the transport direction, but the orientation of the processing surface of the substrate with respect to the transport direction is not limited to this. For example, the direction in which the substrate is fixed by the fixing means at the individual position 26 is variable, and the angle of the surface to be processed of the substrate with respect to the transport direction is 0 degrees (parallel to the transport direction) to 90 degrees (transport) for the purpose of improving the processing effect. (Perpendicular to the direction).

Further, a stirring means may be provided in the processing tank 16 to improve the efficiency of supplying the processing liquid to the surface to be processed.

In the surface treatment of the substrate for forming the electron source substrate, the hydrophobizing agent filled in the processing tank 16 used for hydrophobizing the substrate surface for forming a conductive thin film has a desired surface treatment effect, That is, a material containing a hydrophobizing agent capable of imparting desired droplet imparting characteristics to the substrate surface, for example, imparting desired hydrophobicity is used. As the hydrophobizing agent, various ones can be used.For example, a liquid containing an organosilicon compound represented by a silane coupling agent such as trimethylmethoxysilane, dimethyldimethoxysilane, and methyltrimethoxysilane may be used. it can.

When the method of the present invention is applied to the manufacture of an electron source substrate, when a conductive thin film is formed by an ink jet method, for example, a method described in Japanese Patent Application Laid-Open No. 9-115428 or the like is applied. Can be. That is, an organic metal compound for mainly generating a component for obtaining conductivity and an organic compound such as acetylene alcohol or acetylene glycol for mainly securing a good property of applying a liquid to a substrate surface are mixed with water. The liquid contained in the main solvent is applied as droplets at a predetermined position in the arrangement region of the pair of element electrodes by an ink jet method, dried, and baked to form a conductive film, for example, a conductive film having a thickness of 50 to 200 mm. A thin film can be obtained.

As the organic metal compound, a metal organic acid can be used. Examples of the organic acid include formic acid, acetic acid, propionic acid, butyric acid, isobutyric acid, oxalic acid, and the like.
Examples thereof include organic acids having a carboxyl group having 1 to 4 carbon atoms, such as malonic acid and succinic acid. As the metal, platinum, palladium, platinum group elements such as ruthenium, gold, copper, chromium, tantalum, iron, lead, zinc, tin,
Tungsten and the like can be mentioned. This organometallic compound can be used with a hydroxyalkylamine. Preferred organometallic compounds in such a form include a metal and an ethanolamine-carboxylic acid complex, for example, an ethanolamine-palladium acetate complex. The concentration of the metal contained in the liquid is appropriately selected, but is preferably 0.01% by weight to 5% by weight.

Specific examples of acetylene alcohol or acetylene glycol are disclosed in JP-A-9-11 / 1999.
Compounds described in Japanese Patent No. 5428 can be used, and the content thereof can be, for example, 0.01% by weight to 5% by weight.

As the medium mainly composed of water, water or a mixture of water and various additives as necessary can be used, and the content of water is, for example, about 50 to 99% by weight.

[0028]

(Example 1) A substrate surface treatment apparatus shown in FIG. 1 was prepared. In the present surface treatment apparatus, the substrate is held in the substrate cassette 24 and then subjected to surface treatment so that the substrate can be fixed to the transfer means or transferred easily by the transfer robot. A 0.5% ethanol solution of dimethyldimethoxysilane was stored as a processing liquid 17 in the processing tank 16. The processing tank 16 was provided with a carry-in port 18 and a carry-out port 19, and the carry-out port 19 was provided with air knives 20 and 21.
The mounting positions of the air knives 20 and 21 are
5 cm from the liquid level. Further, the transfer means 14 is provided inside the processing tank 16, and the transfer means 14 is provided with a plurality of individual positions 26 for holding the substrate cassette. 13 and 1
Reference numeral 5 denotes a transfer means for transferring the substrate outside the processing tank. These transfer means also include individual positions 25 and 27 for holding the substrate cassette.
Are provided. 11 and 12 are transfer robots. The transfer robot 11 grasps the substrate cassette by the transfer means 13 and
It is introduced into the processing tank 16 through the loading port 18,
The operation of attaching to the individual position 26 is performed. Further, the transfer robot 12 grasps the substrate cassette by the transfer means 14, enters and exits the outside through the outlet of the processing tank 16, and
The operation of attaching the device 5 to the individual fixed position 27 is performed. The operating speed of the apparatus was adjusted so that the time during which the substrate was immersed in the processing liquid was 5 minutes.

Next, a surface conduction electron source substrate was manufactured using this substrate surface treatment apparatus. As shown in FIG. 6A, a device electrode 2, 3 made of Pt having a thickness of 40 nm is formed on a glass substrate 1 by a sputtering method and a lift-off method.
Was formed. Next, paste material (NP manufactured by Noritake Co., Ltd.)
-4035C) is printed on a substrate using a screen printing method, and is baked at 450 ° C. to obtain FIG.
A printed wiring (column wiring) 90 was formed as shown in FIG. The printed wiring 90 was made conductive with the element electrode 2. Next, a paste material (NP-7710 manufactured by Noritake Co., Ltd.) is printed on the substrate using a screen printing method,
By baking, an insulating film 85 was formed as shown in FIG. Next, paste material (NP- manufactured by Noritake Co., Ltd.)
4035C) is printed on a substrate using a screen printing method, and is baked at 450 ° C. to obtain FIG.
The printed wiring 91 was formed as shown in FIG. The printed wiring (row wiring) 91 and the element electrode 3 were made conductive. Further, the printed wiring 90 and the printed wiring 91 are insulated by the insulating film 85.

After washing the substrate thus formed on which the element electrodes and the printed wiring were formed, the substrate was subjected to a surface treatment by a prepared substrate surface treatment apparatus. Figure 1 shows the surface treatment process
Will be described. First, after holding the substrate in the substrate cassette, the substrate was mounted at a position 24 on the transfer means 13 at an individual position. Then, the sheet was conveyed to the inside of the apparatus by the conveying means 13. The substrate cassette transferred into the apparatus was removed from the transfer unit 13 by the transfer robot 11. Then, it was immersed in the processing liquid from the loading port of the processing tank 16 and attached to the individual position of the transfer means 14. When the transfer means 14 was operated and the substrate cassette reached the position directly below the exit 19, the transfer robot 12 gripped the substrate cassette. Then, the air knives 20, 21 attached to the carry-out port of the processing tank were operated. Then, by taking out the substrate cassette, the substrate was pulled up from the processing liquid and the liquid was drained at the same time. By setting the substrate pulling speed at this time to 1 cm / sec, it was confirmed that good drainage was performed. Also, it was confirmed that good drainage was performed at the lifting speeds of 0.5 cm / sec and 10 cm / sec.
Subsequently, the substrate cassette was mounted on the transfer means 15 at a fixed position by the transfer robot 12. When the transfer means 15 was operated and the substrate cassette reached the outside of the substrate processing apparatus 10, the substrate cassette was removed from the transfer means 15, and a series of surface treatments was completed.

As shown in FIG. 7A, the substrate after the surface treatment is applied to a palladium acetate-ethanolamine complex alcohol using a bubble jet type jetting device (BJ-10V manufactured by Canon Inc.) between device electrodes. The aqueous solution was applied in droplets 9 one by one (one dot). At this time, the applied droplets spread in a circular shape as shown at 9 'in FIG. 7A to form adhering droplets in regions including the ends of the device electrodes 2 and 3 on the substrate.

After the application of the droplets, the substrate was heated at 350 ° C. for 30 minutes to form a conductive thin film 4 made of palladium oxide at a position where the device electrodes 2 and 3 were connected as shown in FIG. . When the formed conductive thin films 4 were observed with a microscope, it was confirmed that each of the conductive thin films 4 was almost circular in shape and almost even on the substrate, and that all the conductive thin films were formed to have the same diameter and uniformity. . Further, an electric current is applied between the printed wirings in the vertical and horizontal directions of the substrate, and the conductive thin film 4 is formed as shown in FIG.
The electron emission portion 5 was formed at the center of the. As described above, a surface conduction electron source substrate having no unevenness on the substrate was formed.

Example 2 A substrate surface treatment apparatus shown in FIG. 2 was prepared. The substrate is held in a substrate cassette 24 and then subjected to a surface treatment so that the substrate can be easily fixed to a transfer means or transferred by a transfer robot. A 0.5% ethanol solution of dimethyldimethoxysilane was stored as a processing liquid 17 in the processing tank 16. In the processing tank 16,
A carry-in port 18 and a carry-out port 19 were provided, and the carry-out port 19 was provided with air knives 20 and 21. The mounting positions of the air knives 20 and 21 were 5 cm from the liquid surface of the processing liquid 17. Further, a transfer means 14 is provided inside the processing tank 16,
The transfer means 14 is provided with a plurality of individual positions 26 for holding the substrate cassette. A heating chamber 22 was provided behind the processing tank 16 in the substrate transport direction. An infrared heater was provided as a heating means 23 inside the heating chamber 22. 13 and 15
Is a transporting means for transporting the substrate outside the processing bath. In particular, the transporting means 15 is configured to allow the substrate cassette to pass through the heating chamber 22. In addition, a plurality of individual positions 25 and 27 for holding the substrate cassette are also provided on these transport means 13 and 15. 11 and 12 are transfer robots. The transfer robot 11 holds the substrate cassette by the transfer means 13 and
6 was inserted into the interior through the carry-in port 18 and attached to the individual position 26 of the transfer means 14. The transfer robot 12 grips the substrate cassette by the transfer means 14, enters and exits the outside through the transfer port of the processing tank 16, and mounts the substrate cassette at the individual position 27 of the transfer means 15. The operating speed of the apparatus was adjusted so that the time during which the substrate was immersed in the processing liquid was 5 minutes. In the heating chamber 22, the output of the infrared heater was adjusted so that the substrate was heated to about 120 ° C. during the transfer.

Next, a surface conduction electron source substrate was manufactured using this substrate surface treatment apparatus. By the same process as in Example 1, a substrate on which device electrodes and printed wiring were formed as shown in FIG. After washing the substrate, the substrate was subjected to surface treatment using a prepared substrate surface treatment apparatus. The surface treatment step will be described with reference to FIG. First, after holding the substrate in the substrate cassette, the substrate was mounted at a position 24 on the transfer means 13 at an individual position. Then, the sheet was conveyed to the inside of the apparatus by the conveying means 13. The substrate cassette transferred into the apparatus was removed from the transfer unit 13 by the transfer robot 11. Then, it was immersed in the processing liquid from the loading port of the processing tank 16 and attached to the individual position of the transfer means 14. When the transfer means 14 was operated and the substrate cassette reached the position directly below the exit 19, the transfer robot 12 gripped the substrate cassette.
And an air knife 2 attached to the carry-out port of the processing tank
0, 21 were activated. Then, by taking out the substrate cassette, the substrate was pulled up from the processing liquid and the liquid was drained at the same time. At this time, the lifting speed of the substrate was 1 cm / sec. Subsequently, the substrate cassette is moved by the transfer robot 12.
It was attached to the individual position 27 on the transfer means 15. Subsequently, the transfer means 15 was operated, the substrate cassette was passed through the heating chamber 22, and the substrate was heated. Then, when the substrate cassette reaches the outside of the substrate processing apparatus 10, the transport unit 1
5 to complete a series of surface treatments.

Thereafter, a conductive thin film 4 made of palladium oxide was formed as shown in FIG. 7B through the ink jet process in the same process as in the first embodiment. When the formed conductive thin films 4 were observed with a microscope, it was confirmed that each of the conductive thin films 4 was almost circular in shape and almost even on the substrate, and that all the conductive thin films were formed to have the same diameter and uniformity. . Further, an electric current was applied between the printed wirings on the vertical and horizontal sides of the substrate to form an electron emitting portion 5 at the center of the conductive thin film 4 as shown in FIG. As described above, a surface conduction electron source substrate having no unevenness on the substrate was formed.

Example 3 Using the surface conduction electron source substrate formed in Example 2, an image forming apparatus as shown in FIG. 5 was manufactured. The surface conduction type electron source substrate was placed in a rear plate 6, a support frame 7, and a face plate (light emitting display panel) 100 made of a glass material, and the respective members were bonded. A frit glass was used for bonding, and heated to 450 ° C. for bonding.
A metal back 98 and a phosphor 99 are formed inside the face plate, and a high voltage terminal 97 connected to the metal back is drawn out of the image forming apparatus. The printed wirings 90 and 91 formed on the surface conduction electron source substrate are connected to X-direction terminals 9 extending outside the image forming apparatus.
5. The structure was connected to the Y-direction terminal 96. Further, the inside air was exhausted using a vacuum pump through an exhaust pipe (not shown). After the internal pressure becomes about 1 × 10 ⁻⁶ Pa, benzonitrile vapor is internally dispersed to a partial pressure of 1.3 × 1.
Introduced at 0 ^-4 Pa, X-direction terminal 95 and Y-direction terminal 9
A pulse voltage was applied during 6 to activate for 30 minutes. The pulse is a rectangular pulse of 15 V, 1 ms, and -15
V and a 1 ms rectangular pulse were alternately applied at 100 Hz. This process is for depositing carbon near the electron emitting portion formed on the substrate to increase the amount of emitted electrons. After the activation step, the inside was sufficiently evacuated again, and the exhaust pipe was welded with a gas burner to complete the image forming apparatus. A 4 kV potential is applied to the metal back 98 of this image forming apparatus through the high voltage terminal 97, and the X direction terminal 95 is applied.
An image was displayed by inputting an image signal to the Y-direction terminal 96. It was observed that uniform display without unevenness was obtained over the entire display screen.

[0037]

According to the substrate surface treating apparatus of the present invention, even a large-sized substrate on which printed wiring and the like are formed can be subjected to an even surface treatment. Further, when an organic silicon compound or the like is used for the treatment liquid, more preferable treatment can be performed.

According to the surface conduction electron source substrate of the present invention,
Uniform characteristics without in-plane unevenness can be obtained. According to the image forming apparatus provided with the surface conduction electron source substrate of the present invention, uniform display without display unevenness can be obtained.

[Brief description of the drawings]

FIG. 1 is a schematic view showing one example of a substrate surface treatment apparatus of the present invention.

FIG. 2 is a schematic view showing another example of the substrate surface treatment apparatus of the present invention.

FIGS. 3A to 3C are schematic diagrams illustrating the operation of the substrate surface treatment apparatus of the present invention.

FIGS. 4A to 4C are schematic views illustrating the operation of the substrate surface treatment apparatus of the present invention.

FIG. 5 is a schematic view of the image forming apparatus of the present invention, with a part thereof omitted.

FIGS. 6A to 6D are schematic diagrams illustrating a process of manufacturing a surface conduction electron-emitting device.

FIGS. 7A to 7C are schematic diagrams showing a manufacturing process of the surface conduction electron-emitting device.

FIG. 8 is a schematic view showing a manufacturing process of the surface conduction electron-emitting device.

FIG. 9 is a schematic view showing an example of a conventional substrate surface treatment apparatus.

[Explanation of symbols]

 1 Substrate 2-3 Electrode 4 Conductive thin film 5 Electron emission section 6 Rear plate 7 Support frame 8 Inkjet device 9 Droplet 9 'Droplet 10 Surface treatment device 11-12 Transport robot 13-15 Transport means 16 Processing tank 17 Treatment liquid 18 Carry-in 19 Carry-out 20-21 Air knife 22 Heating chamber 23 Heating means 24 Substrate cassette 25-27 Fixed position 31-37 Substrate cassette 85 Insulating film 90-91 Print wiring 95 X-direction terminal 96 Y-direction terminal 97 High voltage terminal 98 Metal back 99 Phosphor 100 Face plate 101 Loader unit 102-103 Substrate direction conversion unit 104 Single wafer transfer system 105 Single wafer immersion tank 106 Immersion treatment unit 107 Rinse unit 108 Rinse unit 109 Ultrasonic rinsing unit 110 Drying unit 111 Unloader section 112 Cassette 113 Substrate 114 Transfer roller 115 Transfer robot 116 Substrate fixing position 118 Lower tank 119 Spray nozzle 120 Ultrasonic cleaner 121 Air knife 122 Other cassette 131 Substrate 132-133 Device electrode 134 Conductive thin film 140 Lower wiring 142 Strip-shaped insulating layer 144 Intersection insulating layer 145 Upper wiring

Claims (13)

[Claims] 1. A substrate surface processing apparatus comprising: a processing tank capable of storing a processing liquid therein; a substrate transfer means; and an air knife; wherein the processing tank has a loading port for loading a substrate; A carry-out port for carrying out the substrate is provided, and the substrate carrying means has a function of carrying the substrate from the carry-in port into the processing tank, a function of moving the substrate inside the treatment tank, and a processing of the substrate from the carry-out port. A substrate surface treatment apparatus having a function of transferring the air knife outside the tank, wherein the air knife is provided at a carry-out port of the processing tank. 2. A substrate surface processing apparatus comprising: a processing tank capable of storing a processing liquid therein; a substrate transporting unit; an air knife; and a substrate heating unit. And a carry-out port for carrying out the substrate. The substrate carrying means has a function of carrying the substrate from the carry-in port into the processing tank, a function of moving the substrate inside the processing tank, and a function of Has a function of transporting the substrate out of the processing tank from the carry-out port, and a function of passing the substrate to the substrate heating means. The air knife is provided at the carry-out port of the processing tank, and the substrate heating means A substrate surface treatment apparatus provided behind a tank in the direction of substrate transport. 3. The substrate according to claim 1, wherein the substrate is for forming an electronic element, and the surface of the substrate includes a region for forming a functional film.
A substrate surface treatment apparatus according to any one of claims 1 to 4. 4. An electronic device, comprising: a conductive film on an insulating substrate, which communicates between a pair of device electrodes and has an electron emission portion;
Intersecting portions intersect via an insulating film, and have a row direction wiring and a column direction wiring that are insulated from each other, and one of the pair of element electrodes is connected to the row direction wiring and the other is connected to the column direction wiring. An electron source substrate, wherein the functional film is the conductive film, and the functional film forming region is a region in which the pair of element electrodes partitioned by the row direction wiring and the column direction wiring are arranged. 4. The substrate surface treatment apparatus according to claim 3, wherein at least one of the row-directional wiring, the column-directional wiring, and an insulating film for ensuring insulation of these wirings is formed by a printing method. 5. The treatment liquid according to claim 1, wherein the treatment liquid contains a hydrophobizing agent.
A substrate surface treatment apparatus according to any one of claims 1 to 4. 6. The substrate surface treatment apparatus according to claim 5, wherein the hydrophobizing agent is an organosilicon compound. 7. A method for treating a surface of a substrate, comprising: immersing a substrate in a treatment liquid containing a hydrophobizing agent; and removing the substrate at the same time as lifting the substrate from the treatment liquid. 8. The surface of a substrate, wherein the substrate is dipped in a processing solution containing a hydrophobizing agent, and then the substrate is pulled up from the processing solution, and at the same time, the substrate is drained, and then the substrate is heated. Processing method. 9. The surface treatment method according to claim 7, wherein the hydrophobizing agent is an organosilicon compound. 10. The substrate for forming an electronic element,
The surface treatment method according to claim 7, wherein the substrate surface includes a region for forming a functional film. 11. A row in which said electronic element communicates between a pair of element electrodes on an insulating substrate, and a conductive film having an electron emitting portion, and a crossing portion intersected by an insulating film and insulated from each other. An electron source substrate having a direction wiring and a column direction wiring, wherein one of the pair of element electrodes is connected to the row direction wiring and the other is connected to the column direction wiring, and the functional film is the conductive film. The functional film formation region is a region where the pair of element electrodes partitioned by the row direction wiring and the column direction wiring are arranged, and the row direction wiring, the column direction wiring, and insulation of these lines are provided. The surface treatment method according to claim 10, wherein at least one of the insulating films for securing the property is formed by a printing method. 12. A conductive film having a pair of device electrodes on an insulating substrate, the conductive film having an electron emitting portion, and a crossing portion intersected by an insulating film and intersecting with each other in a row direction wiring and a column direction. A method of manufacturing an electron source substrate in which one of the pair of element electrodes is connected to the row-direction wiring and the other is connected to the column-direction wiring. Providing a row direction wiring and a column direction wiring that intersect with each other and insulated from each other; and forming a pair of element electrodes in a region defined by the row direction wiring and the column direction wiring, one of which is provided in the row. For directional wiring,
The other is connected to the column-directional wiring and disposed, and the surface of the insulating substrate provided with the element electrode is provided.
A step of treating with a treatment liquid containing a hydrophobizing agent as the treatment liquid according to the surface treatment method described in the above, and connecting the device electrodes between the pair of device electrodes after the surface treatment, thereby forming an electron emission portion. Providing a conductive film having the following formula: 13. An image forming apparatus comprising a surface conduction electron source substrate obtained by the manufacturing method according to claim 12.