JP2000243819A - Manufacturing method of electrostatic chuck - Google Patents
Manufacturing method of electrostatic chuckInfo
- Publication number
- JP2000243819A JP2000243819A JP4144899A JP4144899A JP2000243819A JP 2000243819 A JP2000243819 A JP 2000243819A JP 4144899 A JP4144899 A JP 4144899A JP 4144899 A JP4144899 A JP 4144899A JP 2000243819 A JP2000243819 A JP 2000243819A
- Authority
- JP
- Japan
- Prior art keywords
- electrostatic chuck
- dielectric
- molded body
- manufacturing
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000012212 insulator Substances 0.000 claims abstract description 19
- 239000000919 ceramic Substances 0.000 claims abstract description 18
- 239000000843 powder Substances 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 22
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 11
- 239000002994 raw material Substances 0.000 claims description 10
- 238000000465 moulding Methods 0.000 claims description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 5
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- 239000003989 dielectric material Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000007772 electrode material Substances 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 238000005245 sintering Methods 0.000 abstract description 3
- 238000007731 hot pressing Methods 0.000 abstract description 2
- 238000010304 firing Methods 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000002270 dispersing agent Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 238000005238 degreasing Methods 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 101000701286 Pseudomonas aeruginosa (strain ATCC 15692 / DSM 22644 / CIP 104116 / JCM 14847 / LMG 12228 / 1C / PRS 101 / PAO1) Alkanesulfonate monooxygenase Proteins 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 101000983349 Solanum commersonii Osmotin-like protein OSML13 Proteins 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229920005822 acrylic binder Polymers 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000002706 hydrostatic effect Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Jigs For Machine Tools (AREA)
Abstract
(57)【要約】
【課題】 内部電極の反りが小さく、安定した吸着力を
有する静電チャックを製造する。
【解決手段】 上層にセラミックスから成る誘電体、中
層に電極、下層にセラミックスから成る絶縁体基盤を備
えたセラミックス静電チャックの製造方法において、誘
電体原料の成形体および／または絶縁体基板原料の成形
体の一主面に電極として金属粉ペーストを塗布し、重ね
合わせた後、ホットプレス焼成することにより、内部電
極の反りが小さく、吸着力が均一な静電チャックを製造
できる。
(57) [Problem] To manufacture an electrostatic chuck having a small internal electrode warpage and a stable suction force. SOLUTION: In a method of manufacturing a ceramic electrostatic chuck having an upper dielectric layer made of ceramics, an intermediate layer made of electrodes, and a lower layer made of ceramics, an insulator base is formed. By applying a metal powder paste as an electrode to one main surface of the molded body, superimposing, and then sintering by hot pressing, it is possible to manufacture an electrostatic chuck having a small internal electrode warpage and a uniform attraction force.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体製造装置等
においてウェハ等を静電的に吸着保持したり、搬送する
ための静電チャックに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic chuck for electrostatically holding and transporting a wafer or the like in a semiconductor manufacturing apparatus or the like.
【０００２】[0002]
【従来の技術】従来より、半導体製造用装置において、
Ｓｉウェハ等に成膜処理やエッチング処理する際にはウ
ェハの平坦度を保ちながら保持する必要があり、このよ
うな保持手段としては機械的保持方式、真空吸着方式、
静電吸着方式が提案されている。これらの内、静電吸着
方式は静電チャックによりウェハを保持する方法であ
り、ウェハ加工面の平坦度に優れ、真空中での使用も可
能であるため多用されつつある。2. Description of the Related Art Conventionally, in semiconductor manufacturing equipment,
When performing a film forming process or an etching process on a Si wafer or the like, it is necessary to hold the wafer while maintaining the flatness. Such a holding means includes a mechanical holding method, a vacuum suction method,
An electrostatic attraction method has been proposed. Among them, the electrostatic chucking method is a method of holding a wafer by an electrostatic chuck, and has been used widely because it has excellent flatness of a processed surface of a wafer and can be used in a vacuum.
【０００３】従来の静電チャックは吸着力としてクーロ
ン力を利用したものと、ジョンセンラーベック力を利用
したものがある。クーロン力を利用した静電チャックと
しては誘電体としてＣａＴｉＯ3、ＰｂＴｉＯ3−Ｌａ2
Ｏ3系などを用いたものがある（例えば特公平８−３１
５１７号公報など）。Conventional electrostatic chucks include those utilizing Coulomb force as an attraction force and those utilizing Johnsen-Rahbek force. As an electrostatic chuck utilizing Coulomb force, CaTiO 3 , PbTiO 3 -La 2 are used as dielectrics.
There are those using an O 3 system or the like (for example,
517, etc.).
【０００４】また、ジョンセン・ラーベック力は、誘電
体とウェーハとの界面の小さなギャップに微少電流が流
れ、帯電分極して誘起させことによって生じる力であ
り、誘電体の体積固有抵抗率が約１０12〜１０13Ω・ｃ
ｍ以下になると発生する。ジョンセン・ラーベック力を
利用した静電チャックには、誘電体としてＡｌ2Ｏ3−Ｔ
ｉＯ2系などアルミナに遷移金属元素を添加したセラミ
ックス、あるいはＡｌＮを主成分としたセラミックスが
用いられている（例えば、特公平６−９７６７５、特開
平２−１６０４４、特開平８−５５８９９号公報な
ど）。[0004] The Johnsen-Rahbek force is a force generated when a minute current flows through a small gap at an interface between a dielectric and a wafer, and is induced by charging and polarization. 12 to 10 13 Ω · c
m. Al 2 O 3 -T is used as a dielectric for an electrostatic chuck utilizing the Johnsen-Rahbek force.
Ceramics in which a transition metal element is added to alumina, such as iO 2 , or ceramics containing AlN as a main component are used (for example, Japanese Patent Publication No. 6-97675, JP-A-2-16044, JP-A-8-55899, etc.). ).
【０００５】[0005]
【発明が解決しようとする課題】静電チャックの製造方
法としては、テープ成形した複数のセラミックスシート
を積層し、その積層体上に電極をスクリーン印刷等で印
刷し、更に別のセラミックスシートの積層体を重ね、加
圧成形した後、常圧下で一体焼成して製造するのが一般
的である。しかしながら、この様な方法では焼成工程に
おいて内部電極に５０〜２００μｍ以上の反りが発生す
ることを避けられず、吸着面と内部電極の間の距離が一
定とならないため、吸着力が不均一になってしまう問題
があった。更に、ウェハサイズ１２インチ以上の大型の
静電チャック製造においては、反りが非常に大きくなる
ため、製造歩留りが大幅に低下するという問題も発生し
ていた。As a method for manufacturing an electrostatic chuck, a plurality of tape-formed ceramic sheets are laminated, electrodes are printed on the laminated body by screen printing or the like, and another ceramic sheet is laminated. It is common to stack the bodies, press-mold them, and then fire them together under normal pressure to produce them. However, in such a method, it is inevitable that a warp of 50 to 200 μm or more occurs in the internal electrode in the firing step, and the distance between the suction surface and the internal electrode is not constant, so that the suction force becomes uneven. There was a problem. Further, in the manufacture of a large electrostatic chuck having a wafer size of 12 inches or more, since the warpage is extremely large, there has been a problem that the manufacturing yield is significantly reduced.
【０００６】[0006]
【課題を解決するための手段】本発明者らは成形体の焼
成時の反りを低減する方法として、従来の常圧下での一
体焼成ではなく、ホットプレスによる一体焼成を施すこ
とにより、反りを著しく抑えられることを見い出し、本
発明を完成させるに至った。即ち、本発明は以下の通り
である。 （１）上層にセラミックスからなる誘電体、中層に電
極、下層にセラミックスからなる絶縁体基板を備えた静
電チャックの製造方法において、誘電体原料の成形体
（Ａ）と絶縁体基板原料の成形体（Ｂ）とを作製し、次
いで成形体（Ａ）および／または成形体（Ｂ）の一主面
に電極原料として金属粉ペーストを塗布し、次いで成形
体（Ａ）と成形体（Ｂ）との間に上記電極層が挟まれる
ように重ね合わせた後、ホットプレスにより一体焼成す
ることを特徴とする静電チャックの製造方法。 （２）誘電体原料の成形体（Ａ）または絶縁体基板原料
の成形体（Ｂ）の少なくとも一方がＣＩＰ成形により作
製されることを特徴とする（１）項記載の静電チャック
の製造方法。 （３）誘電体原料の成形体（Ａ）または絶縁体基板原料
の成形体（Ｂ）の少なくとも一方がドクターブレード成
形により作製されることを特徴とする（１）項記載の静
電チャックの製造方法。 （４）誘電体と絶縁体の主組成が同一の化合物であるこ
とを特徴とする（１）〜（３）項の何れかに記載の静電
チャックの製造方法。 （５）電極がＷまたはＭｏであることを特徴とする
（１）〜（４）項の何れかに記載の静電チャックの製造
方法。 （６）誘電体がアルミナ質セラミックスであることを特
徴とする（１）〜（５）項の何れかに記載の静電チャッ
クの製造方法。 （７）誘電体がＴｉＯ2を含有したアルミナであること
を特徴とする（６）項記載の静電チャックの製造方法。 （８）誘電体がＴｉ2Ｏ3を含有したアルミナであること
を特徴とする（６）項記載の静電チャックの製造方法。 （９）誘電体が窒化アルミニウム質セラミックスである
ことを特徴とする（１）〜（５）項の何れかに記載の静
電チャックの製造方法。Means for Solving the Problems As a method of reducing the warpage of the molded body during firing, the present inventors have performed an integrated firing by a hot press instead of the conventional integrated firing under normal pressure to reduce the warpage. The inventors have found that the present invention can be significantly suppressed, and have completed the present invention. That is, the present invention is as follows. (1) In a method of manufacturing an electrostatic chuck having an upper dielectric layer made of ceramics, an intermediate layer made of electrodes, and a lower layer made of an insulating substrate made of ceramics, the molded body (A) of the dielectric raw material and the molding of the insulating substrate raw material are formed. Body (B), and then apply a metal powder paste as an electrode raw material to one main surface of the formed body (A) and / or the formed body (B). Then, the formed body (A) and the formed body (B) And stacking the electrodes so that the electrode layers are interposed therebetween, and then integrally firing by hot pressing. (2) The method for producing an electrostatic chuck according to (1), wherein at least one of the molded body (A) of the dielectric raw material and the molded body (B) of the insulating substrate raw material is manufactured by CIP molding. . (3) The production of the electrostatic chuck according to (1), wherein at least one of the molded body (A) of the dielectric raw material and the molded body (B) of the insulating substrate raw material is manufactured by doctor blade molding. Method. (4) The method for manufacturing an electrostatic chuck according to any one of (1) to (3), wherein the main composition of the dielectric and the insulator is the same compound. (5) The method for manufacturing an electrostatic chuck according to any one of (1) to (4), wherein the electrode is W or Mo. (6) The method for manufacturing an electrostatic chuck according to any one of (1) to (5), wherein the dielectric is alumina ceramics. (7) The method for manufacturing an electrostatic chuck according to (6), wherein the dielectric is alumina containing TiO 2 . (8) The method for manufacturing an electrostatic chuck according to (6), wherein the dielectric is alumina containing Ti 2 O 3 . (9) The method for manufacturing an electrostatic chuck according to any one of (1) to (5), wherein the dielectric is aluminum nitride ceramics.
【０００７】本発明によれば、内部電極を挟んだ誘電
体、絶縁体基板の成形体をホットプレス焼成するため、
焼結体の反りが小さくなる。そのため内部電極の反りを
２０μｍ以下に抑えることができ、吸着力が均一な高性
能の静電チャックを製造することができる。また、ウェ
ハサイズが１２インチ以上の大型静電チャックも容易に
製造が可能である。According to the present invention, a molded body of a dielectric or insulator substrate sandwiching an internal electrode is fired by hot press.
Warpage of the sintered body is reduced. Therefore, the warpage of the internal electrodes can be suppressed to 20 μm or less, and a high-performance electrostatic chuck having a uniform suction force can be manufactured. Also, a large electrostatic chuck having a wafer size of 12 inches or more can be easily manufactured.
【０００８】[0008]
【発明の実施の形態】次に本発明による静電チャックの
製造方法を具体的に説明する。誘電体としては公知の誘
電体セラミックスが使用可能であり、請求項６〜９に示
したようにアルミナ質セラミックス、窒化アルミニウム
質セラミックス等が使用される。アルミナ質セラミック
スの場合、ＴｉＯ2、Ｔｉ2Ｏ3などの遷移金属酸化物の
添加により誘電体の体積固有抵抗率を１０9〜１０13Ω
・ｃｍの範囲で制御でき、ジョンセン・ラーベック力に
よる強い吸着力が発現する。絶縁体基板としてはアルミ
ナ、窒化アルミニウム、窒化珪素、等が使用可能である
が、請求項４に示したように誘電体と主組成が同一の化
合物を用いると焼成時の誘電体、絶縁体基板間の反応や
収縮率の違いによる反り、クラックの発生などのトラブ
ルを防止することができ、より好ましい。ここで言う主
組成が同一とは、当該セラミックスの焼成収縮挙動、熱
膨張率がほぼ同一となる組成ということである。従っ
て、アルミナ、窒化アルミニウムの場合、焼成収縮挙
動、熱膨張率がほぼ同一である限り、添加する助剤の種
類、量に若干の差があってもかまわない。誘電体、絶縁
体基板の成形体は原料粉末にバインダー、分散剤、等を
加え、ＣＩＰ（静水圧加圧）成形、プレス成形、あるい
はドクターブレード成形等により作製したものが用いら
れる。電極材料としては高温で焼成される関係から、請
求項５に示したように高融点のＷ、Ｍｏを用いるのが一
般的であるが、場合によりＰｔ、Ｐｄ、Ａｕ等を使用し
ても良い。電極は金属粉ペーストをスクリーン印刷等に
より誘電体もしくは絶縁体基板の成形体上に塗布され
る。電極を挟んで、誘電体、絶縁体基板の成形体を重ね
合わせ、必要により脱脂を行った後、ホットプレス装置
にセットし、加圧一体焼成を行う。焼成後のサンプルを
所定形状に加工し、静電チャックが完成する。Next, a method for manufacturing an electrostatic chuck according to the present invention will be specifically described. Known dielectric ceramics can be used as the dielectric, and alumina ceramics, aluminum nitride ceramics, and the like are used as described in claims 6 to 9. In the case of alumina ceramics, the volume specific resistivity of the dielectric is set to 10 9 to 10 13 Ω by adding a transition metal oxide such as TiO 2 or Ti 2 O 3.
・ It can be controlled in the range of cm, and a strong adsorption force due to the Johnsen-Rahbek force appears. Alumina, aluminum nitride, silicon nitride, or the like can be used as the insulator substrate. However, when a compound having the same main composition as the dielectric is used as described in claim 4, the dielectric or the insulator substrate during firing is used. This is more preferable because troubles such as warpage and crack generation due to differences in the reaction and shrinkage between the two can be prevented. Here, the term "main composition is the same" means that the ceramics have substantially the same firing shrinkage behavior and thermal expansion coefficient. Therefore, in the case of alumina and aluminum nitride, as long as the firing shrinkage behavior and the coefficient of thermal expansion are substantially the same, there may be a slight difference in the type and amount of the auxiliary agent to be added. As the molded body of the dielectric or insulator substrate, one obtained by adding a binder, a dispersant, and the like to the raw material powder and performing CIP (hydrostatic pressure) molding, press molding, doctor blade molding, or the like is used. Since the electrode material is fired at a high temperature, it is common to use W or Mo having a high melting point as described in claim 5, but Pt, Pd, Au or the like may be used in some cases. . The electrode is formed by applying a metal powder paste on a formed body of a dielectric or insulator substrate by screen printing or the like. After sandwiching the electrodes, the formed bodies of the dielectric and insulating substrates are overlapped, degreased if necessary, and then set in a hot press apparatus, followed by pressurized integrated firing. The fired sample is processed into a predetermined shape to complete an electrostatic chuck.
【０００９】[0009]
【実施例】以下、実施例に基づき本発明を詳細に説明す
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail based on embodiments.
【００１０】（実施例１）α−Ａｌ2Ｏ3の粉末に５重量
％のＴｉＯ2の粉末を加え、蒸留水、バインダー、分散
剤を加えてボールミル混合した。スラリーをスプレード
ライヤーで造粒し、粒径約７０μｍの造粒粉とした。こ
れを円盤状に２枚、ＣＩＰ成形し、それぞれ誘電体、絶
縁体基板の成形体とした。誘電体の成形体上にＷペース
トをスクリーン印刷した後、絶縁体基板の成形体を重ね
合わせた。６００℃、アルゴンガス中で脱脂後、ホット
プレス装置にセットし、アルゴンガス中で１５００℃、
３０ＭＰａで２時間、加圧焼成した。得られた焼結体の
誘電体部分を厚さ３００μｍになるように研削加工し、
更に全体を直径２００ｍｍ、厚さ５ｍｍの円盤状に加工
した。絶縁体部分に直径５ｍｍの穴をあけ、リード電極
を結合し、図１に示すような静電チャックを製造した。(Example 1) 5% by weight of TiO 2 powder was added to α-Al 2 O 3 powder, distilled water, a binder, and a dispersant were added, followed by ball mill mixing. The slurry was granulated with a spray drier to obtain granulated powder having a particle size of about 70 μm. Two of these were disc-shaped and CIP-molded to obtain molded bodies of dielectric and insulator substrates, respectively. After the W paste was screen-printed on the dielectric molded body, the molded body of the insulating substrate was overlaid. After degreasing in an argon gas at 600 ° C., it was set in a hot press, and in an argon gas at 1500 ° C.
It baked under pressure at 30 MPa for 2 hours. Grinding the dielectric part of the obtained sintered body to a thickness of 300 μm,
Further, the whole was processed into a disk shape having a diameter of 200 mm and a thickness of 5 mm. A hole having a diameter of 5 mm was made in the insulator portion, and a lead electrode was connected thereto, thereby producing an electrostatic chuck as shown in FIG.
【００１１】この静電チャックに真空中で５００Ｖの直
流電圧を２０秒間印加し、シリコンウェーハを吸着した
ときの吸着力を測定したところ、４５００ｇ／ｃｍ2の
均一な吸着力を示した。静電チャックを切断し、内部電
極の反りを測定したところ、反りは最大１２μｍと非常
に小さいことが分かった。When a DC voltage of 500 V was applied to this electrostatic chuck in a vacuum for 20 seconds, and a suction force was measured when the silicon wafer was suctioned, a uniform suction force of 4500 g / cm 2 was shown. The electrostatic chuck was cut, and the warpage of the internal electrode was measured. As a result, it was found that the warpage was extremely small at a maximum of 12 μm.
【００１２】（実施例２）焼結助剤としてＹ2Ｏ3を１．
０重量％含むＡｌＮの粉末にエタノール、バインダー、
分散剤を加えてボールミル混合した。スラリーをスプレ
ードライヤーで造粒し、粒径約５０μｍの造粒粉とし
た。これを実施例１と同様に円盤状に２枚ＣＩＰ成形
し、それぞれ誘電体、絶縁体基板の成形体とした。誘電
体の成形体上にＷペーストをスクリーン印刷した後、絶
縁体基板の成形体を重ね合わせた。８００℃、窒素中で
脱脂後、ホットプレス装置にセットし、窒素中で１８５
０℃、３０ＭＰａで２時間、加圧焼成した。得られた焼
結体の誘電体部分を厚さ３００μｍになるように研削加
工し、更に全体を直径２００ｍｍ、厚さ５ｍｍの円盤状
に加工した。絶縁体部分に直径５ｍｍの穴をあけ、リー
ド電極を結合し、図１に示すような静電チャックを作製
した。この静電チャックを切断し、内部電極の反りを測
定したところ、反りは最大９μｍと非常に小さいことが
分かった。Example 2 Y 2 O 3 was used as a sintering aid.
0 wt% AlN powder, ethanol, binder,
The ball mill was mixed with the dispersant. The slurry was granulated with a spray drier to obtain granulated powder having a particle size of about 50 μm. Two pieces of this were CIP-molded into a disk shape in the same manner as in Example 1 to obtain molded bodies of dielectric and insulator substrates, respectively. After the W paste was screen-printed on the dielectric molded body, the molded body of the insulating substrate was overlaid. After degreasing in nitrogen at 800 ° C., it was set in a hot press, and 185 in nitrogen.
Pressure sintering was performed at 0 ° C. and 30 MPa for 2 hours. The dielectric part of the obtained sintered body was ground to a thickness of 300 μm, and the whole was further processed into a disk shape having a diameter of 200 mm and a thickness of 5 mm. A hole having a diameter of 5 mm was made in the insulator portion, and a lead electrode was connected thereto, thereby producing an electrostatic chuck as shown in FIG. This electrostatic chuck was cut, and the warpage of the internal electrode was measured. As a result, it was found that the warpage was extremely small at a maximum of 9 μm.
【００１３】（実施例３）α−Ａｌ2Ｏ3の粉末に０．５
重量％のＴｉ2Ｏ3の粉末を加え、蒸留水、アクリルバイ
ンダー、分散剤を加えてボールミル混合し、粘度約１５
０００ｃＰのスラリーを得た。これをドクターブレード
成形後、乾燥して、厚さ約３００μｍのシート成形体を
得た。これを数枚ずつ積層し、円盤状に切断して、誘電
体、絶縁体基板の成形体とした。絶縁体基板の成形体上
にＭｏペーストをスクリーン印刷した後、絶縁体基板の
成形体を積層した。６００℃、アルゴンガス中で脱脂
後、ホットプレス装置にセットし、アルゴンガス中で１
６００℃、４０ＭＰａで２時間、加圧焼成した。得られ
た焼結体の誘電体部分を厚さ３００μｍになるように研
削加工し、更に全体を直径３００ｍｍ、厚さ４ｍｍの円
盤状に加工した。絶縁体部分に直径５ｍｍの穴をあけ、
リード電極を結合し、静電チャックを製造した。静電チ
ャックを切断し、内部電極の反りを測定したところ、反
りは最大１５μｍと非常に小さいことが分かった。(Example 3) 0.5 to α-Al 2 O 3 powder
Weight% of Ti 2 O 3 powder, distilled water, acrylic binder and dispersant were added and mixed with a ball mill.
A slurry of 000 cP was obtained. This was molded into a doctor blade and then dried to obtain a sheet molded body having a thickness of about 300 μm. This was laminated on several sheets at a time, and cut into a disk to obtain a molded body of a dielectric or insulator substrate. After the Mo paste was screen-printed on the insulator substrate compact, the insulator substrate compact was laminated. After degreasing in argon gas at 600 ° C., set in a hot press,
Pressure calcination was performed at 600 ° C. and 40 MPa for 2 hours. The dielectric portion of the obtained sintered body was ground to a thickness of 300 μm, and the whole was further processed into a disk shape having a diameter of 300 mm and a thickness of 4 mm. Drill a 5mm diameter hole in the insulator,
The lead electrode was connected to produce an electrostatic chuck. The electrostatic chuck was cut, and the warpage of the internal electrode was measured. As a result, it was found that the warpage was extremely small at a maximum of 15 μm.
【００１４】比較のため、同様の方法で作製した誘電
体、電極、絶縁体基板の積層成形体をアルゴンガス中、
１６００℃で４時間、常圧焼成したところ、内部電極の
反りは大きく、約１５０μｍであった。For comparison, a laminate formed of a dielectric, an electrode, and an insulator substrate manufactured by the same method was placed in argon gas.
When baked at 1600 ° C. for 4 hours under normal pressure, the warpage of the internal electrode was large and about 150 μm.
【００１５】[0015]
【発明の効果】以上説明した通り、本発明の静電チャッ
クの製造方法を用いると、吸着力が均一な高性能の静電
チャックを容易に製造することができるため、産業上極
めて有益である。As described above, when the method for manufacturing an electrostatic chuck according to the present invention is used, a high-performance electrostatic chuck having a uniform suction force can be easily manufactured, which is extremely useful in industry. .
【図１】本発明の静電チャック断面の概略を示す図であ
る。FIG. 1 is a view schematically showing a cross section of an electrostatic chuck according to the present invention.
１．誘電体層 ２．内部電極（導体層） ３．絶縁体基板 ４．リード電極 ５．シリコンウェーハ 1. 1. dielectric layer 2. Internal electrode (conductor layer) 3. Insulator substrate Lead electrode 5. Silicon wafer
───────────────────────────────────────────────────── フロントページの続き (72)発明者 成木 紳也 川崎市中原区井田３丁目35番１号 新日本 製鐵株式会社技術開発本部内 Ｆターム(参考） 3C016 GA10 5F031 FA07 GA24 GA26 GA30 PA13 PA30 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Shinya Nariki 3-35-1, Ida, Nakahara-ku, Kawasaki-shi F-term in the Technology Development Division of Nippon Steel Corporation (reference) 3C016 GA10 5F031 FA07 GA24 GA26 GA30 PA13 PA30
Claims (9)
層に電極、下層にセラミックスからなる絶縁体基板を備
えた静電チャックの製造方法において、誘電体原料の成
形体（Ａ）と絶縁体基板原料の成形体（Ｂ）とを作製
し、次いで成形体（Ａ）および／または成形体（Ｂ）の
一主面に電極原料として金属粉ペーストを塗布し、次い
で成形体（Ａ）と成形体（Ｂ）との間に上記電極層が挟
まれるように重ね合わせた後、ホットプレスにより一体
焼成することを特徴とする静電チャックの製造方法。1. A method for manufacturing an electrostatic chuck comprising a ceramic dielectric material in an upper layer, an electrode in an intermediate layer, and an insulating substrate in a lower layer, comprising: a molded body (A) of a dielectric material; Then, a metal powder paste is applied as an electrode material to one main surface of the molded body (A) and / or the molded body (B), and then the molded body (A) and the molded body ( A method for manufacturing an electrostatic chuck, comprising: laminating the electrodes so that the electrode layer is sandwiched between them;
基板原料の成形体（Ｂ）の少なくとも一方がＣＩＰ成形
により作製されることを特徴とする請求項１記載の静電
チャックの製造方法。2. The electrostatic chuck according to claim 1, wherein at least one of the molded body (A) of the dielectric raw material and the molded body (B) of the insulating substrate raw material is manufactured by CIP molding. Method.
基板原料の成形体（Ｂ）の少なくとも一方がドクターブ
レード成形により作製されることを特徴とする請求項１
記載の静電チャックの製造方法。3. The molded body of dielectric material (A) or the molded body of insulator substrate material (B), at least one of which is manufactured by doctor blade molding.
A manufacturing method of the electrostatic chuck according to the above.
であることを特徴とする請求項１乃至３の何れかに記載
の静電チャックの製造方法。4. The method for manufacturing an electrostatic chuck according to claim 1, wherein the main composition of the dielectric and the insulator is the same compound.
する請求項１乃至４の何れかに記載の静電チャックの製
造方法。5. The method according to claim 1, wherein the electrode is W or Mo.
ことを特徴とする請求項１乃至５の何れかに記載の静電
チャックの製造方法。6. The method of manufacturing an electrostatic chuck according to claim 1, wherein the dielectric is an alumina ceramic.
あることを特徴とする請求項６記載の静電チャックの製
造方法。7. The method according to claim 6, wherein the dielectric is alumina containing TiO 2 .
あることを特徴とする請求項６記載の静電チャックの製
造方法。8. The method of manufacturing an electrostatic chuck according to claim 6, wherein the dielectric is alumina containing Ti 2 O 3 .
スであることを特徴とする請求項１乃至５の何れかに記
載の静電チャックの製造方法。9. The method according to claim 1, wherein the dielectric is aluminum nitride ceramics.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4144899A JP2000243819A (en) | 1999-02-19 | 1999-02-19 | Manufacturing method of electrostatic chuck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4144899A JP2000243819A (en) | 1999-02-19 | 1999-02-19 | Manufacturing method of electrostatic chuck |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000243819A true JP2000243819A (en) | 2000-09-08 |
Family
ID=12608669
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4144899A Pending JP2000243819A (en) | 1999-02-19 | 1999-02-19 | Manufacturing method of electrostatic chuck |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000243819A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002110772A (en) * | 2000-09-28 | 2002-04-12 | Kyocera Corp | Electrode built-in ceramic and its manufacturing method |
| WO2022250394A1 (en) * | 2021-05-24 | 2022-12-01 | 주식회사 아모센스 | Electrostatic chuck, electrostatic chuck heater comprising same, and semiconductor holding device |
| CN115894045A (en) * | 2022-11-02 | 2023-04-04 | 无锡海古德新技术有限公司 | Aluminum nitride-based dielectric ceramic and preparation method thereof |
-
1999
- 1999-02-19 JP JP4144899A patent/JP2000243819A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002110772A (en) * | 2000-09-28 | 2002-04-12 | Kyocera Corp | Electrode built-in ceramic and its manufacturing method |
| WO2022250394A1 (en) * | 2021-05-24 | 2022-12-01 | 주식회사 아모센스 | Electrostatic chuck, electrostatic chuck heater comprising same, and semiconductor holding device |
| CN115894045A (en) * | 2022-11-02 | 2023-04-04 | 无锡海古德新技术有限公司 | Aluminum nitride-based dielectric ceramic and preparation method thereof |
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