JP2000237580A - Surface treating device, electron emitting element, electron source, image forming device, and these production - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a surface treating device capable of performing surface treatment small in intra-plane fluctuation or the like, to provide an electron emitting element having excellent electron emitting characteristic, to provide an electron source high in uniformity, to provide an image forming device having excellent displaying quality and high in uniformity, and to provide the method capable of producing them in a high yield. SOLUTION: This surface treating device for surface-treating a substrate 200 to be treated, which is arranged in a treating vessel 202, by supplying a treating agent in a gaseous state is provided with a treating agent supply means 203 to the treating vessel 202, a treating agent introducing port 204, a treating agent exhausting port 205 and a treating agent exhausting means 206 from the treating vessel 202 and the treating agent introducing port 204 is movably formed to change the discharging direction of the treating agent.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface treatment device, an electron-emitting device manufactured by using the device, an electron source having a large number of the electron-emitting devices, and a display device using the electron source. And an image forming apparatus such as an exposure apparatus, and a manufacturing method thereof.

[0002]

2. Description of the Related Art Conventionally, two types of electron-emitting devices are known, namely, a thermionic electron-emitting device and a cold cathode electron-emitting device. Field emission type (hereinafter, referred to as "FE")
Type ". ), Metal / insulating layer / metal type (hereinafter referred to as “MI
M type ". ) And surface conduction electron-emitting devices.

[0003] As an example of the FE type, W. P. Dyke
and W. W. Dolan, "Field Em
issue ", Advance in Elect
ron Physics, 8, 89 (1956) or C.I. A. Spindt, “Physical
Properties of thin-filmfi
eld emission cathodes wit
h molybdenum cones ", JA
ppl. Phys. , 47, 5248 (1976).
And the like are known.

As an example of the MIM type, C.I. A. Mea
d, “Operation of Tunnel-Em
issue Devices ", J. Appl.
Phys. , 32, 646 (1961).

As an example of the surface conduction electron-emitting device,
M. I. Elinson, Radio Eng.
Electron Phys. , 10, 1290 (1
965).

[0006] The surface conduction electron-emitting device utilizes a phenomenon in which electrons are emitted by passing a current through a small-area thin film formed on an insulating substrate in parallel with the film surface. Examples of the surface conduction electron-emitting device include a device using an SnO ₂ thin film by Elinson et al. And a device using an Au thin film [G. Dittmer: "Thin Solid
Films ", 9, 317 (1972)], In ₂
O ₃ / SnO ₂ thin film [M. Hartwell
and C.I. G. FIG. Fonstad: "IEEE T
rans. ED Conf. ", 519 (197
5)], using a carbon thin film [Hisashi Araki et al .: Vacuum,
26, No. 1, p. 22 (1983)].

As a typical example of these surface conduction electron-emitting devices, the above-mentioned M.P. Figure 2 shows the device configuration of Hartwell
FIG. In FIG. 1, reference numeral 1 denotes a substrate. Reference numeral 4 denotes a conductive film, which is formed of a metal oxide thin film or the like formed in an H-shaped pattern. The electron emission portion 5 is formed by an energization process called energization forming described later. In the drawing, the element electrode interval L is 0.5 to 1 mm, and W ′ is 0.1 m.
m.

In these surface conduction electron-emitting devices, it is general that the electron-emitting portion 5 is formed beforehand by performing an energization process called energization forming on the conductive film 4 before electron emission. That is, the energization forming means that a voltage is applied to both ends of the conductive film 4, and the conductive film 4 is locally destroyed, deformed or deteriorated to change the structure, and the electrons in an electrically high-resistance state are formed. This is a process for forming the emission unit 5. Note that a crack is generated in a part of the conductive film 4 in the electron emitting portion 5, and electrons are emitted from the vicinity of the crack.

The above-mentioned surface conduction electron-emitting device has an advantage that a large number of devices can be arrayed over a large area because of its simple structure. Therefore, various applications for utilizing this feature are being studied. For example, a charged beam source,
Application to an image forming apparatus such as a display device is exemplified.

Conventionally, as an example in which a large number of surface conduction electron-emitting devices are arrayed, surface conduction electron-emitting devices are arranged in parallel, and both ends (both device electrodes) of each surface conduction electron-emitting device are wired. (Also referred to as a common wiring). An electron source in which rows each connected by a common line (also referred to as a ladder-type arrangement) are provided (for example, JP-A-64-31332, JP-A-1-283737, 2-257552).

In particular, in the case of a display device, a flat panel display device similar to a display device using liquid crystal can be used, and a self-luminous display device that does not require a backlight is used as a surface conduction type electron emission device. There has been proposed a display device in which an electron source in which a number of elements are arranged and a phosphor that emits visible light when irradiated with an electron beam from the electron source are combined (US Pat. No. 5,066,883).

[0012]

SUMMARY OF THE INVENTION The applicant of the present invention has proposed a method of manufacturing a surface conduction electron-emitting device which employs a conductive film as a manufacturing method advantageous for a large area, regardless of a sputtering method or a vapor deposition method using a vacuum. Are proposed. One example is a method for manufacturing an electron-emitting device in which a solution containing an organic metal is applied onto a substrate by a spinner, then patterned into a desired shape, and the organic metal is thermally decomposed to obtain a conductive film.

In Japanese Patent Application Laid-Open No. Hei 8-171850, in a step of patterning a conductive film into a desired shape, a lithography method is not used, but an ink jet method such as a bubble jet method or a piezo jet method is used. To give a droplet of a solution containing an organic metal,
A manufacturing method for forming a conductive film having a desired shape has been proposed.

Further, in Japanese Patent Application Laid-Open No. 9-69334, in order to form a conductive film with good reproducibility, prior to the step of applying a solution containing an organic metal to a substrate, an HMD is used.
It has been proposed to apply a liquid such as S (hexamethyldisilazane) to a substrate to make the surface of the substrate hydrophobic.

However, in a method for manufacturing an electron-emitting device in which a solution containing an organic metal is applied to a substrate and the organic metal is thermally decomposed to obtain a conductive film, the surface energy of the substrate and the surface of the solution containing the organic metal are reduced. If the energy is not a desired value, a uniform film thickness cannot be obtained when the composition is applied by a spinner, and a desired shape cannot be obtained when a droplet is applied by an inkjet method.

Further, even when a liquid containing HMDS or the like is applied to the substrate to make the surface of the substrate hydrophobic, uneven coating may occur particularly in a large area, and a desired shape can be obtained. There were no cases. If the conductive film does not have the desired shape, it may affect the process of forming an electron emission portion in the conductive film, etc. In order to form an electron source having a plurality of elements with less variation in the electron emission characteristics of each element, it is desired to more stably form a conductive film having a desired shape.

For this reason, the present inventors are studying a method of surface treatment by supplying a treatment agent in a gaseous state into a treatment container as a surface treatment method for adjusting uniform surface energy. There is a problem that the processing container becomes large with the increase in area, and it takes time to fill the processing agent in the container, and the amount of the processing agent used increases. In addition, there is a problem that if the processing container is made as small as possible with respect to the substrate, distribution and fluctuation of the processing agent concentration are likely to occur.

In view of the above problems, an object of the present invention is to provide a surface treatment method for adjusting the surface energy, in which a processing agent is supplied to a substrate to be processed in a gaseous state and surface treatment is performed, thereby achieving high throughput and low cost. Surface treatment device capable of performing surface treatment with little in-plane variation, new configuration of electron-emitting device having good electron emission characteristics, highly uniform electron source, high uniformity and good display quality It is an object of the present invention to provide an image forming apparatus and a method of manufacturing the same that can be manufactured with a high yield.

[0019]

The structure of the present invention to achieve the above object is as follows.

That is, the first aspect of the present invention is a surface treatment apparatus for supplying a treatment agent in a gaseous state to a substrate to be treated disposed in a treatment container and performing a surface treatment. Means, a processing agent introduction port, a processing agent exhaust port, and a processing agent exhaust means from the processing container. The processing agent introduction port is movably formed in the processing container so that the processing agent discharge direction changes. The surface treatment apparatus is characterized in that:

A second aspect of the present invention is a step of forming a pair of device electrodes on the substrate, a step of adjusting the surface energy of the substrate on which the device electrodes are formed, and applying a solution containing an organic metal to the substrate. A step of thermally decomposing the applied solution to form a conductive film, and a forming step of forming an electron emission portion in the conductive film by applying a current between the device electrodes. In the method of manufacturing the electron-emitting device, the surface of the base is treated by using the first surface treatment apparatus of the present invention in the step of adjusting.

A third aspect of the present invention resides in an electron-emitting device manufactured by the above-mentioned second method of the present invention.

A fourth aspect of the present invention is an electron source for emitting electrons in response to an input signal, wherein a plurality of the third electron-emitting devices of the present invention are arranged on a substrate. In the electron source.

A fifth aspect of the present invention is a method of manufacturing the fourth electron source of the present invention, wherein a plurality of electron-emitting devices are manufactured by the second method of the present invention. In a method of manufacturing an electron source.

A sixth aspect of the present invention is an apparatus for forming an image based on an input signal, comprising at least the fourth electron source of the present invention and irradiation of an electron beam emitted from the electron source. And an image forming member for forming an image by using the image forming apparatus.

According to a seventh aspect of the present invention, there is provided a method of manufacturing the sixth image forming apparatus of the present invention, wherein the electron source is manufactured by the fifth method of the present invention. A method for manufacturing a forming apparatus.

According to the surface treatment apparatus of the present invention, since the introduction port of the treatment agent is movable in the treatment container, it is easy to supply the treatment agent to the whole inside of the container, and the uniformity of the atmosphere in the container is improved. Is improved.

In addition, since the substrate moving mechanism is provided, even if the uniformity of the atmosphere in the container is uneven, the substrate is moved in accordance with the distribution of the atmosphere, thereby averaging over time and thereby distributing the in-plane distribution of the processing. And the occurrence of processing variations between substrates can be suppressed.

Further, since the means for diffusing the substrate is provided in the processing container, the flow of the processing agent in the container is less likely to be uneven, and the processing agent can be easily supplied to the entire container. Is improved.

Further, since the processing agent introduction port and the processing agent exhaust port are arranged on the surfaces facing each other across the substrate to be processed, and the substrates are arranged perpendicular to the opposing surfaces, a large number of substrates are provided. Are simultaneously processed, the processing agent easily flows evenly to each substrate, and variations in processing for each substrate can be reduced.

Further, since the treatment agent circulation system is provided, it is easy to make the atmosphere uniform.

Further, a sensor for processing agent information in the processing container, a valve between the processing agent supply means and the processing agent introduction port, and a valve between the processing agent exhaust means and the processing agent exhaust port are provided. A control circuit for issuing a command to a valve between the processing agent supply means and the processing agent introduction port or / and a valve between the processing agent exhaust means and the processing agent exhaust port based on the processing agent information from Therefore, it becomes easy to control the concentration of the treatment agent in the container.

That is, according to the present invention, in the step of adjusting the surface energy of the substrate, since the above-described surface treatment apparatus is used, an electron-emitting device having in-plane variations and the like and having good electron-emitting characteristics is manufactured. can do. As a result, even when a large number of electron-emitting devices are formed over a large area, uniform electron emission characteristics can be obtained, an electron source with high uniformity, and an image forming apparatus with high uniformity and good display quality can be provided. Can be.

[0034]

Next, preferred embodiments of the present invention will be described.

FIG. 1 is a schematic view showing an example of the structure of an electron-emitting device according to the present invention. FIG. 1 (a) is a plan view and FIG. 1 (b).
Is a longitudinal sectional view. In FIG. 1, 1 is a substrate, 2 and 3 are electrodes (element electrodes), 4 is a conductive film, and 5 is an electron emitting portion.

Examples of the substrate 1 include quartz glass, glass having a reduced impurity content such as Na, blue plate glass, a laminate obtained by laminating SiO ₂ on a blue plate glass by sputtering or the like, ceramics such as alumina, and a Si substrate. Can be used.

The materials of the opposing device electrodes 2 and 3 are as follows.
General conductor materials can be used, for example, Ni, C
metals or alloys such as r, Au, Mo, W, Pt, Ti, Al, Cu, Pd and Pd, Ag, Au, RuO ₂ , Pd
Metal or metal oxide and printed conductor composed of glass or the like, such as -ag, is appropriately selected from a semiconductor conductive materials such as transparent conductor and polysilicon or the like In ₂ O ₃ -SnO _2.

The element electrode interval L, the element electrode length W, the shape of the conductive film 4 and the like are designed in consideration of the applied form and the like. The element electrode interval L can be preferably in the range of several hundred nm to several hundred μm, and more preferably several μm to several tens μm in consideration of the voltage applied between the element electrodes.
In the range. The element electrode length W is set to several μm to several hundred μm in consideration of the resistance value of the electrode and the electron emission characteristics.
In the range. Film thickness d of device electrodes 2 and 3
Can be in the range of several tens nm to several μm.

In addition to the structure shown in FIG. 1, a structure in which a conductive film 4 and device electrodes 2 and 3 are formed on a substrate 1 in this order may be adopted.

As a material for forming the conductive film 4, for example, Pd, Pt, Ru, Ag, Au, Ti, In, Cu,
It is appropriately selected from metals such as metals such as Cr, Fe, Zn, Sn, Ta, W, and Pb. These metals form an organometallic compound of the conductive film forming material.

The thickness of the conductive film 4 is appropriately set in consideration of the step coverage of the device electrodes 2 and 3 and the resistance value between the device electrodes 2 and 3, and is usually several to several hundreds. nm, more preferably 1 nm to 50 n
m. The resistance value of Rs is 10 ²
The value is preferably from Ω / □ to 10 ⁷ Ω / □. Note that Rs is a value that appears when a resistance R measured in the length direction of a thin film having a width w and a length 1 is set as R = Rs (l / w).

The electron-emitting portion 5 is constituted by a high-resistance crack formed in a part of the conductive film 4,
In some cases, conductive fine particles having a particle size ranging from several times 0.1 nm to several tens nm are present. The conductive fine particles contain some or all of the elements of the material constituting the conductive film 4. Further, the electron-emitting portion 5 and the conductive film 4 in the vicinity thereof may have carbon or a carbon compound formed by an activation step described later.

There are various methods for manufacturing the electron-emitting device of the present invention. One example will be described with reference to FIG. In FIG. 2, the same parts as those shown in FIG. 1 are denoted by the same reference numerals as those in FIGS. In FIG. 2, reference numeral 31 denotes a surface treatment device, and 33 denotes a droplet of a solution containing an organic metal provided on a substrate.

1) Device electrodes 2 and 3 are formed on a substrate 1 so as to face each other. The device electrodes 2 and 3 are formed, for example, by forming a film of the device electrode material on the cleaned blue glass substrate 1 by a vacuum evaporation method, a sputtering method, or the like, and patterning the film by lift-off, etching, or the like. It is formed by a method of printing and firing a paste including the paste (FIG. 2A).

2) The surface energy of the substrate 1 on which the device electrodes 2 and 3 are formed is initialized. That is, the device electrodes 2 and 3
The substrate 1 on which is formed is subjected to pure water ultrasonic cleaning and warm water cleaning. By this step, the surface energy of the substrate becomes a hydrophilic surface.

3) Next, a step of adjusting the surface energy of the substrate is performed (FIG. 2B). First, the substrate prepared in the above step 2) is placed in the processing container 31. next,
The inside of the processing container is set as a processing agent atmosphere, and the atmosphere is maintained for a certain time to adjust the surface energy of the substrate. As for the order, the processing container atmosphere may be set in the processing container, and then the substrate manufactured in the above step 2) may be installed in the processing container.

Means for setting the inside of the processing container to a processing agent atmosphere include a method of introducing the processing agent from outside the processing container together with a carrier gas such as nitrogen, a method of disposing a processing agent in a solution state in the processing container and evaporating the same. There is a method.

In order to obtain a desired substrate surface with good reproducibility, it is preferable that the concentration of the processing agent in the processing container is controlled, and that the surface of each substrate be spread over the entire surface of the substrate and between a plurality of substrates. It is preferable that the treating agent is supplied evenly.

The treatment agent adheres to the surface of the substrate,
Those capable of providing a hydrophobic group such as a methyl group or an ethyl group on the substrate are suitable. For example, a silane coupling agent, an organic compound such as an aliphatic or aromatic compound, or the like can be used.

In this step, the treatment agent adheres to the substrate surface,
The surface energy of the substrate becomes lower, and the surface state of the substrate changes to a water emitting surface. Regarding the surface state of the substrate, the contact angle between the element electrode surface on the substrate and the surface between the element electrodes is 20 to 50 degrees with respect to the aqueous solution containing an organic metal applied on the substrate in the step 4) described later. It is desirable that the applied droplet form a stable shape on the substrate.

The conditions for applying the processing agent to the substrate are set by the partial pressure and the temperature of the processing agent. The temperature is not limited to room temperature, and a suitable value may be selected depending on the type of the treatment agent and the type of the base, and the desired surface energy value and the adhesion speed of the treatment agent.

4) An aqueous solution containing an organic metal is applied to the substrate after the surface treatment (FIG. 2C). Specifically, droplets of an aqueous solution containing an organic metal are applied between the element electrodes 2 and 3 and the element electrodes by an ink jet method such as a bubble jet method or a piezo jet method.
The shape of the applied droplet 33 is determined by the surface energy of the main surface of the substrate and the surface energy of the droplet of the aqueous solution containing the organic metal prepared in advance in the step 3).

5) Next, the droplets provided on the substrate are thermally decomposed to form a conductive film (FIG. 2D). The solution containing the organic metal provided on the substrate in the step 4) is
By heating the substrate on a firing furnace or a hot plate, the substrate is thermally decomposed in an atmosphere such as the air, and the conductive film 4 made of metal or metal oxide is formed.

6) Next, an energization process called forming is performed. When an electric current is applied between the device electrodes 2 and 3, an electron-emitting portion 5 is formed at the portion of the conductive film 4 (FIG. 2E).
In the forming step, heat energy is locally concentrated on a part of the conductive film 4 instantaneously, and the electron emitting portion 5 having a changed structure is formed at that portion.

FIG. 3 shows an example of the voltage waveform of the energization forming.

The voltage waveform is particularly preferably a pulse waveform.
The method shown in FIG. 3A in which a pulse with a constant pulse crest value is applied continuously and the method shown in FIG. 3B in which a pulse is applied while increasing the pulse crest value are used for this purpose. is there.

First, the case where the pulse peak value is a constant voltage will be described with reference to FIG. T ₁ in FIG.
And T ₂ are the pulse width and the pulse interval of the voltage waveform. Usually, T ₁ is 1 μsec to 10 μsec, and T ₂ is 10 μsec to 100 μsec.
It is set in the range of m seconds. The peak value (peak voltage) of the triangular wave is appropriately selected according to the form of the electron-emitting device.
Under such conditions, for example, a voltage is applied for several seconds to several tens minutes. The pulse waveform is not limited to a triangular wave, and a desired waveform such as a rectangular wave can be adopted.

Next, a case where a voltage pulse is applied while increasing the pulse peak value will be described with reference to FIG.
T ₁ and T ₂ in FIG. 3B can be the same as those shown in FIG. 3A. The peak value (peak voltage) of the triangular wave can be increased by, for example, about 0.1 V steps.

The end of the energization forming process can be detected by applying a voltage that does not locally destroy or deform the conductive film 4 during the pulse interval T ₂ and measuring the current. For example, a current flowing when a voltage of about 0.1 V is applied is measured, and a resistance value is obtained. When a resistance of 1 MΩ or more is indicated, the energization forming is terminated.

The electrical processing after the forming processing can be performed in, for example, a vacuum processing apparatus as shown in FIG. This vacuum processing device also has a function as a measurement evaluation device. Also in FIG. 4, the same portions as those shown in FIG. 1 are denoted by the same reference numerals.

In FIG. 4, reference numeral 55 denotes a vacuum vessel,
Reference numeral 6 denotes an exhaust pump. An electron-emitting device is provided in the vacuum vessel 55. Reference numeral 51 denotes a power supply for applying a device voltage _Vf to the electron-emitting device, 50 denotes an ammeter for measuring a device current _If flowing between the device electrodes 2 and 3, and 54 denotes an electron-emitting portion 5 of the device. An anode electrode for capturing the emission current _Ie emitted, 53 is a high-voltage power supply for applying a voltage to the anode electrode 54, and 52 is a current for measuring the emission current _Ie emitted from the electron emission unit 5. It is total. As an example, the voltage of the anode electrode 54 is 1 kV to 1 kV.
The measurement can be performed with the range of 0 kV and the distance H between the anode electrode 54 and the electron-emitting device in the range of 2 mm to 8 mm.

In the vacuum vessel 55, equipment necessary for measurement in a vacuum atmosphere such as a vacuum gauge (not shown) is provided.
The measurement and evaluation can be performed in a desired vacuum atmosphere.

The exhaust pump 56 is composed of a normal high vacuum system such as a turbo pump and a rotary pump, and an ultrahigh vacuum system such as an ion pump. The entire vacuum processing apparatus provided with the electron-emitting device substrate shown here can be heated by a heater (not shown).

7) Next, a process called an activation step is performed on the element after the forming (FIG. 2 (f)). The activation step can be performed, for example, by repeatedly applying a pulse between the device electrodes 2 and 3 in an atmosphere containing an organic substance gas in the same manner as in energization forming. _f and the emission current _Ie change remarkably.

The atmosphere containing the organic substance gas in the activation step is formed by utilizing the organic gas remaining in the atmosphere when the inside of the vacuum vessel is evacuated using, for example, an oil diffusion pump or a rotary pump. Alternatively, it can be obtained by introducing a gas of an appropriate organic substance into a vacuum once sufficiently evacuated by an ion pump or the like that does not use oil. The preferable gas pressure of the organic substance at this time varies depending on the form of the above-described element, the shape of the vacuum vessel, the type of the organic substance, and the like, and is appropriately set according to the case. Suitable organic substances include aliphatic hydrocarbons of alkanes, alkenes, and alkynes, aromatic hydrocarbons, alcohols, aldehydes, ketones, amines, and organic acids such as phenols, carboxylic acids, and sulfonic acids. And specifically, C, methane, ethane, propane, etc.
saturated hydrocarbons represented by _n H _{2n + 2} , unsaturated hydrocarbons represented by a composition formula such as C _n H _2n such as ethylene and propylene,
Benzene, toluene, methanol, ethanol, formaldehyde, acetaldehyde, acetone, methyl ethyl ketone, methylamine, ethylamine, phenol,
Formic acid, acetic acid, propionic acid and the like can be used.

By this treatment, carbon or a carbon compound is deposited on the device from organic substances existing in the atmosphere,
The element current _If and the emission current _Ie change remarkably.

The carbon or carbon compound includes, for example, graphite (so-called HOPG, PG, GC), and HOPG has an almost perfect graphite crystal structure, P
G indicates that the crystal grain is about 20 nm and the crystal structure is slightly disordered, and GC indicates that the crystal grain is about 2 nm and the disorder of the crystal structure is further increased. ), Amorphous carbon (refers to amorphous carbon and a mixture of amorphous carbon and the microcrystals of graphite);
The film thickness is preferably in the range of 50 nm or less,
More preferably, the thickness is 30 nm or less.

The termination of the activation step can be determined as appropriate while measuring the device current _If and the emission current _Ie .

8) The electron-emitting device obtained through such a step is preferably subjected to a stabilization step. This step is a step of exhausting the organic substance in the vacuum container. It is preferable to use a vacuum exhaust device that does not use oil so that the oil generated from the device does not affect the characteristics of the element. Specifically, a vacuum exhaust device such as a sorption pump or an ion pump can be used.

The partial pressure of the organic component in the vacuum vessel is 10 partial pressure at which the carbon or carbon compound is not newly deposited.
^-6 Pa or lower is preferable, and 10 ^-10 Pa or lower is particularly preferable. Further, when evacuating the inside of the vacuum vessel, it is preferable to heat the entire vacuum vessel to facilitate evacuating the organic substance molecules adsorbed on the inner wall of the vacuum vessel and the electron-emitting device. The heating conditions at this time are desirably 80 to 250 ° C., preferably 150 ° C. or more, and it is desirable to perform the treatment as long as possible. However, the present invention is not particularly limited to this condition, and the size and shape of the vacuum vessel, the configuration of the electron-emitting device, The conditions are appropriately selected according to the above conditions. The pressure in the vacuum vessel needs to be as low as possible, and is preferably 10 ^-5 Pa or less, more preferably 10 ^-6 Pa or less.

The atmosphere at the time of driving after the stabilization step is preferably the same as the atmosphere at the end of the stabilization process, but is not limited to this. If the organic substance is sufficiently removed, Even if the pressure itself increases somewhat, it is possible to maintain sufficiently stable characteristics. By adopting such a vacuum atmosphere, the deposition of new carbon or a carbon compound can be suppressed, and as a result, the device current _If and the emission current _Ie can be suppressed.
But it stabilizes.

The basic characteristics of the electron-emitting device of the present invention obtained through the above steps will be described with reference to FIG.

FIG. 5 is a diagram schematically showing the relationship between the emission current _Ie and the device current _If measured using the vacuum processing apparatus shown in FIG. 4, and the device voltage _Vf . In FIG. 5, since the emission current _Ie is significantly smaller than the device current _If , it is shown in arbitrary units. The vertical and horizontal axes are linear scales.

As is clear from FIG. 5, the electron-emitting device of the present invention has the following three characteristic properties with respect to the emission current _Ie .

First, when an element voltage higher than a certain voltage (referred to as a threshold voltage; V _{th in} FIG. 5) is applied to the present element, the emission current I _e sharply increases, and on the other hand, the threshold voltage V _th or lower. , The emission current _Ie is hardly detected. That is, it is a non-linear element having a clear threshold voltage V _th with respect to the emission current I _e .

Second, since the emission current _Ie depends monotonically on the device voltage _Vf , the emission current _Ie can be controlled by the device voltage _Vf .

Third, the emission charge trapped by the anode electrode 54 (see FIG. 4) depends on the time during which the device voltage _Vf is applied. That is, the amount of charge captured by the anode electrode 54 can be controlled by the time during which the device voltage _Vf is applied.

As understood from the above description, the electron-emitting device of the present invention can easily control the electron-emitting characteristics according to the input signal. By utilizing this property, it is possible to apply to various fields such as an electron source and an image forming apparatus having a plurality of electron-emitting devices.

[0079] In Figure 5, although the device current I _f showed (MI characteristic) Example monotonically increasing with respect to the device voltage V _f,
The element current _If may exhibit a voltage-controlled negative resistance characteristic (VCNR characteristic) with respect to the element voltage _Vf (not shown).
These properties can be controlled by controlling the steps described above.

Next, application examples of the electron-emitting device of the present invention will be described below. By arranging a plurality of electron-emitting devices of the present invention on a substrate, for example, an electron source or an image forming apparatus can be configured.

Various arrangements of the electron-emitting devices can be adopted. As an example, each of a large number of electron-emitting devices arranged in parallel is connected at both ends, a large number of rows of electron-emitting devices are arranged (referred to as a row direction), and a direction perpendicular to the wiring (referred to as a column direction). There is a ladder-type arrangement in which electrons from the electron-emitting devices are controlled and driven by control electrodes (also referred to as grids) disposed above the electron-emitting devices. Separately, a plurality of electron-emitting devices are arranged in a matrix in the X and Y directions, and one of the electrodes of the plurality of electron-emitting devices arranged in the same row is commonly connected to a wiring in the X direction. One example is one in which the other of the electrodes of a plurality of electron-emitting devices arranged in the same column is commonly connected to a wiring in the Y direction. This is a so-called simple matrix arrangement. First, the simple matrix arrangement will be described in detail below.

The electron-emitting device of the present invention has three characteristics as described above. That is, the emission electrons from the surface conduction electron-emitting device can be controlled by the peak value and the width of the pulse-like voltage applied between the opposing device electrodes when the electrons are equal to or higher than the threshold voltage. On the other hand, below the threshold voltage, almost no emission occurs. According to this characteristic, even when a large number of electron-emitting devices are arranged, if a pulse-like voltage is appropriately applied to each device,
The electron emission amount can be controlled by selecting the surface conduction electron-emitting device according to the input signal.

Hereinafter, based on this principle, an electron source substrate obtained by disposing a plurality of electron-emitting devices of the present invention will be described with reference to FIG. 6, reference numeral 71 denotes an electron source substrate;
Reference numeral 2 denotes an X-direction wiring, and 73 denotes a Y-direction wiring. 74 is an electron-emitting device, and 75 is a connection.

The m X-direction wirings 72 are Dx1, Dx
2,..., Dxm, and can be formed of a conductive metal or the like formed using a vacuum deposition method, a printing method, a sputtering method, or the like. The material, thickness and width of the wiring are appropriately designed.
The Y-directional wiring 73 includes n wirings Dy1, Dy2,..., Dyn, and is formed in the same manner as the X-directional wiring 72. An interlayer insulating layer (not shown) is provided between the m X-directional wirings 72 and the n Y-directional wirings 73 to electrically separate them (m and n are both Positive integer).

The interlayer insulating layer (not shown) is made of SiO ₂ or the like formed by using a vacuum deposition method, a printing method, a sputtering method, or the like. For example, it is formed in a desired shape on the entire surface or a part of the substrate 71 on which the X-directional wiring 72 is formed. The material and the production method are appropriately set. The X-direction wiring 72 and the Y-direction wiring 73 are respectively drawn out as external terminals.

A pair of device electrodes (not shown) constituting the electron-emitting device 74 are electrically connected to m X-direction wires 72 and n Y-direction wires 73 by a connection 75 made of a conductive metal or the like. It is connected.

The material forming the wiring 72 and the wiring 73, the material forming the connection 75, and the material forming the pair of element electrodes may be partially or entirely the same or different from each other. Good. These materials are appropriately selected, for example, from the above-described materials for the device electrodes. When the material forming the element electrode is the same as the wiring material, the wiring connected to the element electrode can also be called an element electrode.

The X-direction wiring 72 is connected to a scanning signal applying means (not shown) for applying a scanning signal for selecting a row of the electron-emitting devices 74 arranged in the X-direction. On the other hand, a modulation signal generating means (not shown) for modulating each column of the electron-emitting devices 74 arranged in the Y direction according to an input signal is connected to the Y-direction wiring 73. The driving voltage applied to each electron-emitting device is supplied as a difference voltage between a scanning signal and a modulation signal applied to the device.

In the above configuration, individual elements can be selected and driven independently using simple matrix wiring.

An image forming apparatus configured using such an electron source having a simple matrix arrangement will be described with reference to FIGS. FIG. 7 is a schematic diagram illustrating an example of a display panel of the image forming apparatus, and FIG. 8 is a schematic diagram of a fluorescent film used in the image forming apparatus of FIG.

In FIG. 7, reference numeral 71 denotes an electron source substrate on which a plurality of electron-emitting devices are arranged; 81, a rear plate on which the electron source substrate 71 is fixed; 86, a fluorescent film 84 on the inner surface of a glass substrate 83;
And a face plate on which a metal back 85 and the like are formed. Reference numeral 82 denotes a support frame, and a rear plate 81 and a face plate 86 are connected to the support frame 82 using frit glass or the like. Reference numeral 88 denotes an envelope, which is sealed by firing at a temperature range of 400 to 500 ° C. for 10 minutes or more in the atmosphere or nitrogen, for example.

Reference numeral 74 denotes an electron-emitting device as shown in FIG. Reference numerals 72 and 73 denote an X-direction wiring and a Y-direction wiring connected to a pair of device electrodes of the surface conduction electron-emitting device.

The envelope 88 includes the face plate 86, the support frame 82, and the rear plate 81, as described above. Since the rear plate 81 is provided mainly for the purpose of reinforcing the strength of the substrate 71, if the substrate 71 itself has sufficient strength, the separate rear plate 81 can be unnecessary. That is, the support frame 82 is directly sealed to the substrate 71, and the envelope 8 is formed by the face plate 86, the support frame 82 and the substrate 71.
8 may be configured. On the other hand, by providing a support (not shown) called a spacer between the face plate 86 and the rear plate 81, the envelope 88 having sufficient strength against atmospheric pressure can be configured.

FIG. 8 is a schematic diagram showing a fluorescent film. The fluorescent film 84 can be composed of only a phosphor in the case of monochrome. In the case of a color fluorescent film, it may be composed of a black conductive material 91 called a black stripe (FIG. 8A) or a black matrix (FIG. 8B) and a fluorescent material 92 depending on the arrangement of the fluorescent materials. it can. The purpose of providing a black stripe and black matrix is
In the case of color display, the color separation between the phosphors 92 of the necessary three primary color phosphors is made black so that color mixing and the like become inconspicuous, and the reduction in contrast due to reflection of external light on the phosphor film 84 is suppressed. It is in. Black conductive material 91
As the material of, other than a commonly used material containing graphite as a main component, a material having conductivity and low light transmission and reflection can be used.

As a method of applying the phosphor on the glass substrate 83, a precipitation method or a printing method can be adopted regardless of monochrome or color. Usually, a metal back 85 is provided on the inner surface side of the fluorescent film 84. The purpose of providing a metal back is
The light emitted from the phosphor toward the inner surface is converted into a face plate 8.
Improving the brightness by specular reflection on the 6 side,
The purpose is to function as an electrode for applying an electron beam acceleration voltage, and to protect the phosphor from damage due to collision of negative ions generated in the envelope. The metal back can be manufactured by performing a smoothing process (usually called “filming”) on the inner surface of the fluorescent film after manufacturing the fluorescent film, and then depositing Al using vacuum evaporation or the like.

The face plate 86 further has the fluorescent film 8
A transparent electrode (not shown) may be provided on the outer surface side of the fluorescent film 84 in order to increase the conductivity of the phosphor film 84.

When performing the above-mentioned sealing, in the case of color, it is necessary to make each color phosphor correspond to the electron-emitting device, and sufficient alignment is indispensable.

The image forming apparatus shown in FIG. 7 is manufactured, for example, as follows.

[0099] in the envelope 88 is evacuated from a suitable heating Shinano, ion pump, through an exhaust pipe (not shown) by an exhaust device not using oil, such as a sorption pump, ^10-5
After the atmosphere is made sufficiently low in the organic substance with a degree of vacuum of about Pa, sealing is performed. In order to maintain a vacuum degree after the envelope 88 is sealed, a getter process may be performed. This is, immediately before or after sealing the envelope 88,
This is a process of heating a getter (not shown) arranged at a predetermined position in the envelope 88 by heating using resistance heating, high-frequency heating, or the like to form a vapor deposition film. The getter usually contains Ba or the like as a main component, and maintains a degree of vacuum of, for example, 1 × 10 ⁻⁵ Pa or more by the adsorption action of the deposited film. Here, steps after the forming process of the electron-emitting device can be set as appropriate.

Next, an example of a method for manufacturing the image forming apparatus of the present invention will be described with reference to FIG. FIG. 9 is an explanatory diagram illustrating a manufacturing process of the image forming apparatus of the present invention.

Step-1 First, a step of forming a substrate, element electrodes, wirings and the like is performed. An element electrode is formed on a substrate by a method similar to the step 1) in the above-described method for manufacturing an electron-emitting device. Further, the row direction wiring and the column direction wiring are formed by a screen printing method, a known photolithography technique, and a semiconductor manufacturing method such as a sputtering method.

Step-2 A step of initializing the surface energy of the substrate is performed in the same manner as in the step 2) in the method for manufacturing an electron-emitting device.

Step-3 A step of adjusting the surface energy of the substrate is performed in the same manner as in the step 3) in the above-described method for manufacturing an electron-emitting device.

Step-4 A step of applying a droplet of an aqueous solution containing an organic metal on a substrate is performed in the same manner as in the step 4) in the above-described method for manufacturing an electron-emitting device.

Step-5 A step of thermally decomposing droplets of a solution containing an organic metal applied on a substrate to form a conductive film in the same manner as in the step 5) in the above-described method for manufacturing an electron-emitting device. I do.

Step-6 The substrate after the above step-5 is placed in a vacuum chamber, and the inside of the vacuum chamber is sufficiently evacuated. Then, the energization forming step is performed by the same method as the step 6) in the method for manufacturing the electron-emitting device.

Step-7 The above-mentioned organic gas is introduced into the vacuum chamber, and an activation step is performed in the same manner as in the step 7) in the above-described method for manufacturing an electron-emitting device.

Step-8 Next, the face plate, the support frame, and the rear plate are bonded via a frit to form an envelope.

Step-9 The envelope is sufficiently evacuated from an exhaust pipe (not shown), and a stabilization step is performed in the same manner as in the step 8) in the method for manufacturing an electron-emitting device. Finally, flash the getter.

The method of manufacturing the image forming apparatus of the present invention as described above is not limited to this, and the process-6 and subsequent steps may be performed after the envelope is formed as in the embodiment described later. The order of the steps and the contents of the steps are not limited thereto.

Next, a description will be given of a surface treatment apparatus used in the method of manufacturing an image forming apparatus according to the present invention. This surface treatment apparatus is an apparatus suitable for performing the surface treatment step in Step 3 of the method for manufacturing the electron-emitting device, the electron source, and the image forming apparatus described above. Hereinafter, the surface treatment apparatus of the present invention will be described with reference to FIGS.

1) FIG. 10 is a schematic diagram showing a surface treatment apparatus in which a treatment agent inlet is movably formed in a treatment container. In FIG. 10, reference numeral 200 denotes a substrate to be processed, 202 denotes a processing container, 203 denotes a processing agent supply unit to the processing container, 204
Denotes a processing agent introduction port, 205 denotes a processing agent exhaust port, 206 denotes a processing agent exhausting unit from the processing container, and 301 denotes an opening / closing unit (valve).

As the processing agent supply means, for example, FIG.
As shown in (2), there is a method in which nitrogen, air, or the like is used as a carrier gas, and the carrier gas in the atmosphere of the treatment agent is supplied into the container by bubbling in the treatment agent. In FIG. 11, reference numeral 207 denotes a flow meter for adjusting the flow rate of the carrier gas, and reference numeral 208 denotes a container for containing the processing agent.

The processing agent introduction port 204 is connected to the processing agent supply means 2.
In the portion where the processing agent from step 03 is introduced into the processing container 202, examples of the method of introducing the processing agent into the container include a method of introducing the treatment agent from a single point, a method of introducing the treatment agent in a line or a plane, and the like.

The processing agent exhaust means 206 is constituted by an exhaust pump or the like, and is a means for exhausting the processing agent in the processing container 202 through the processing agent exhaust port 205.

Opening / closing means such as a valve is provided between the processing agent supply means 203 and the processing agent introduction port 204 and between the processing agent exhaust means 206 and the processing agent exhaust port 205.

In this apparatus, the processing agent introduction port 204 to the processing container 202 is formed so as to be movable in the processing container 202, for example, so as to be able to change its direction or change its position. . In the apparatus shown in FIG. 10, as shown in FIG. 12, a line-shaped nozzle extending from the front to the back can change the ejection direction by changing the inclination angle of the nozzle. 12 (a) to 12 (c) show that the tip nozzle portion of the treatment agent inlet 204 has changed direction when viewed from the same front direction as FIG. 10, and FIG. 12 (d). Figure 10
Is seen from the side.

In the surface treatment apparatus of the present invention, since the treatment agent inlet 204 is formed so that the nozzle discharge direction is movable in the treatment container 202, it is easy to supply the treatment agent to the entire inside of the treatment container. And the uniformity of the atmosphere in the container is improved.

2) FIG. 13 is a schematic diagram showing a surface processing apparatus having a substrate moving mechanism in a processing container. In FIG. 13, members 200 to 206 except for a processing agent introduction port 204 have substantially the same configuration as the surface processing apparatus shown in FIG. 10. 210 is provided with a substrate moving mechanism 209.

In FIG. 13, the substrate moving mechanism 209
A mechanism for rotating the substrate 200, for example,
Mechanism 2 for raising and lowering the substrate position as shown in FIG.
11 and a combination of the substrate rotating mechanism 209 and the substrate lifting / lowering mechanism 211.

Since the present apparatus has the substrate moving mechanism 209, even if the uniformity of the processing agent atmosphere in the processing container 202 becomes uneven, the substrate can be moved according to the distribution of the atmosphere. Average the unevenness over time,
It is possible to suppress the occurrence of in-plane distribution of processing, processing variation between substrates, and the like.

3) FIG. 15 is a schematic diagram showing a surface treatment apparatus provided with a means for diffusing a treatment agent into the treatment container 202. In FIG. 15, members 200 to 206 except for the treatment agent inlet 204 have substantially the same configuration as that of the surface treatment device shown in FIG. A diffusion plate is provided as the means 212. As the diffusion plate as a means for diffusing the processing agent into the processing container 202, for example, a mesh-shaped metal plate or the like can be used.

Since the present apparatus is provided with the means 212 for diffusing the processing agent into the processing container 202, the flow of the processing agent in the processing container is less likely to be uneven, and the processing agent can be easily supplied to the entire container. And the uniformity of the atmosphere in the container is improved.

4) FIG. 16 shows a surface where the processing agent introduction port and the processing agent exhaust port are arranged on the surface facing each other across the substrate to be processed, and the substrate is arranged perpendicular to the opposite surface. It is a schematic diagram which shows a processing apparatus. In FIG. 16, members 200 to 206 except for the treatment agent inlet 204 have substantially the same configuration as the surface treatment apparatus shown in FIG. 10, and in this apparatus, particularly, the treatment agent introduction port 204 and the treatment agent exhaust port. 20
5 are disposed on surfaces facing each other across the substrate 200 to be processed, and the substrate 200 is disposed perpendicularly to the facing surface.

In FIG. 16, a processing agent introduction port 204 is provided at the center of the processing container 202, and a plurality of substrates 200 to be processed are provided on both sides thereof.
Of course, a processing agent introduction port and a processing agent exhaust port may be arranged at both ends, and a substrate to be processed may be installed between them.

In the present apparatus, the processing agent introduction port 204 and the processing agent exhaust port 205 are arranged on surfaces opposed to each other across the substrate 200 to be processed, and the substrate is arranged perpendicular to the opposite surface. Therefore, even when a large number of substrates are simultaneously processed, when the processing agent is introduced into the container, the flow of the processing agent is not blocked by the substrate, and the processing agent is evenly applied to each substrate. It is easy to flow, and the variation in processing for each substrate can be reduced.

5) FIG. 17 is a schematic diagram showing a surface treatment apparatus having a treatment agent circulation system. In FIG. 17, 200
Members 206 to 206 have substantially the same configuration as the surface treatment apparatus shown in FIG. 10, and in this apparatus, in particular, a treatment agent circulation pump is provided as the treatment agent circulation system 213.
Specifically, the downstream side of the processing agent supply unit 203 and the upstream side of the processing agent exhaust unit 206 are connected by a circulation bypass, and a processing agent circulation pump 213 is interposed in the circulation bypass.

In the present apparatus, since the processing agent circulation system 213 is provided, the processing agent is forcibly stirred even if the processing agent concentration in the processing container 202 has a distribution. It is easy to make the atmosphere.

6) FIG. 18 is a schematic diagram showing a surface treatment apparatus having a control circuit for issuing a command to a treatment agent exhaust means based on treatment agent information from a sensor. In FIG. 18, 200
Denotes a substrate to be processed, 202 denotes a processing container, 203 denotes a processing agent supply unit to the processing container, 204 denotes a processing agent introduction port, 214 denotes a sensor relating to processing agent information in the processing container, 205 denotes a processing agent exhaust port, and 206 denotes a processing agent. Means for exhausting treatment agent from container, 21
Reference numeral 5 denotes a control circuit for issuing a command to the processing agent exhaust means based on the processing agent information from the sensor.

As the sensor 214, a pressure sensor or a concentration sensor can be used. In FIG. 18, for example, a pressure sensor 214 is provided facing the inside of the processing container 202, and detects processing agent information in the container. This sensor 21
4, a processing agent control circuit 215 is connected to the processing agent pressure control circuit 215. The processing agent pressure control circuit 215 issues a command to the processing agent exhausting unit 206 based on pressure information of the processing agent from the sensor 214, and an opening / closing unit provided in the processing agent pressure control circuit 215. The processing agent pressure is controlled by opening and closing the (valve) 301.

In FIG. 19, for example, the density sensor 2
16 is provided facing the inside of the processing container 202, and detects concentration information of the processing agent in the container. A processing agent concentration control circuit 217 is connected to the sensor 216, and the sensor 216
The processing agent control circuit 217 uses the processing agent control circuit 217 to output the valve 301 between the processing agent supply unit 203 and the processing agent introduction port 204, the processing agent exhaust unit 206, and the processing agent exhaust port 20.
5 to adjust the supply amount and exhaust amount of the processing agent, thereby controlling the processing agent concentration in the container.

In the present apparatus, the processing agent control circuit 215 issues a command to the processing agent exhausting means 206 based on information from the sensor 214 on the processing agent information in the processing container 202, and the processing agent can be controlled. Processing agent control in the container 202 becomes more reliable and easier.

Next, an example of the configuration of a drive circuit for performing television display based on NTSC television signals on a display panel configured using electron sources in a simple matrix arrangement will be described with reference to FIG. . In FIG.
101 is an image display panel, 102 is a scanning circuit, 103 is a control circuit, 104 is a shift register, 105 is a line memory, 106 is a synchronization signal separation circuit, 107 is a modulation signal generator, and Vx and Va are DC voltage sources.

The display panel 101 has terminals Dox1 to Dox1
oxm, terminals Doy1 to Doyn, and a high voltage terminal 87 are connected to an external electric circuit. Terminals Dox1 to Doxm are used to sequentially drive electron sources provided in the display panel 101, that is, electron emission element groups arranged in a matrix of m rows and n columns, one row (n elements) at a time. A scanning signal is applied. To the terminals Doy1 to Doyn, a modulation signal for controlling an output electron beam of each of the electron-emitting devices in one row selected by the scanning signal is applied. The high-voltage terminal 87 is supplied with a DC voltage of, for example, 10 kV from a DC voltage source Va. This is for applying sufficient energy to the electron beam emitted from the electron-emitting device to excite the phosphor. Is the accelerating voltage.

Next, the scanning circuit 102 will be described. The circuit includes m switching elements (S1 to S
m is schematically shown). Each switching element selects either the output voltage of the DC voltage power supply Vx or 0 [V] (ground level),
It is electrically connected to terminals Dox1 to Doxm of the display panel 101. Each of the switching elements S1 to Sm operates based on a control signal Tscan output from the control circuit 103, and can be configured by combining switching elements such as FETs, for example.

In this case, the DC voltage source Vx is such that the drive voltage applied to the non-scanned element is equal to or lower than the electron emission threshold voltage based on the characteristics of the electron emission element (electron emission threshold voltage). It is set to output a constant voltage.

The control circuit 103 has a function of matching the operation of each unit so that appropriate display is performed based on an image signal input from the outside. The control circuit 103 controls the synchronization signal Tsync sent from the synchronization signal separation circuit 106.
, Tscan, Tsft and T
mry control signals are generated.

The synchronizing signal separating circuit 106 is a circuit for separating a synchronizing signal component and a luminance signal component from an NTSC television signal input from the outside, and uses a general frequency separating (filter) circuit or the like. Can be configured. The synchronizing signal separated by the synchronizing signal separating circuit 106 includes a vertical synchronizing signal and a horizontal synchronizing signal, but is shown here as a Tsync signal for convenience of explanation. The luminance signal component of the image separated from the television signal is represented as a DATA signal for convenience. This DATA signal is output to the shift register 10
4 is input.

The shift register 104 is for serially / parallel converting the DATA signal input serially in time series for each line of an image, and is based on a control signal Tsft sent from the control circuit 103. (In other words, the control signal Tsft may be rephrased as a shift clock of the shift register 104). Data for one line of serial / parallel converted image (equivalent to drive data for n electron-emitting devices)
Are output from the shift register 104 as n parallel signals of Id1 to Idn.

The line memory 105 is a storage device for storing data of one line of an image for a necessary time only, and stores the contents of Id1 to Idn as appropriate according to a control signal Tmry sent from the control circuit 103. The stored contents are output as Id′1 to Id′n and input to the modulation signal generator 107.

The modulation signal generator 107 outputs the image data I
A signal source for appropriately driving and modulating each of the electron-emitting devices in accordance with each of d'1 to Id'n, and an output signal thereof is supplied to the display panel 1 through terminals Doy1 to Doyn.
01 is applied to the electron-emitting device.

As described above, the electron-emitting device of the present invention has the following basic characteristics with respect to the emission current _Ie . That is, electron emission has a clear threshold voltage _Vth , and electron emission occurs only when a voltage equal to or higher than _Vth is applied. For a voltage equal to or higher than the electron emission threshold, the emission current also changes according to the change in the voltage applied to the device. From this, when a pulse-like voltage is applied to this element, for example, when a voltage lower than the electron emission threshold voltage is applied, electron emission does not occur, but when a voltage higher than the electron emission threshold voltage is applied, electrons are not emitted. A beam is output. At that time, the intensity of the output electron beam can be controlled by changing the peak value Vm of the pulse. Further, by changing the pulse width Pw, it is possible to control the total amount of charges of the output electron beam.

Therefore, as a method of modulating the electron-emitting device according to the input signal, a voltage modulation method, a pulse width modulation method, or the like can be adopted. When implementing the voltage modulation method, the modulation signal generator 107 generates a voltage pulse of a fixed length, and a voltage modulation circuit capable of appropriately modulating the peak value of the voltage pulse according to input data. Can be used. When implementing the pulse width modulation method, the modulation signal generator 107 generates a voltage pulse having a constant peak value and modulates the width of the voltage pulse appropriately according to input data. A circuit can be used.

The shift register 104 and the line memory 10
5 can be a digital signal type or an analog signal type. This is because the serial / parallel conversion and storage of the image signal may be performed at a predetermined speed.

When the digital signal type is used, it is necessary to convert the output signal DATA of the synchronization signal separation circuit 106 into a digital signal. For this purpose, an A / D converter is provided at the output of the synchronization signal separation circuit 106. Just do it. In this connection, the circuit used for the modulation signal generator 107 is slightly different depending on whether the output signal of the line memory 105 is a digital signal or an analog signal. That is, in the case of the voltage modulation method using a digital signal, the modulation signal generator 107 includes:
For example, a D / A conversion circuit is used, and an amplification circuit and the like are added as necessary. In the case of the pulse width modulation method, the modulation signal generator 107 includes, for example, a high-speed oscillator, a counter for counting the number of waves output from the oscillator, and a comparator for comparing the output value of the counter with the output value of the memory. (Comparator) is used. If necessary, an amplifier for amplifying the pulse width modulated signal output from the comparator to the drive voltage of the electron-emitting device can be added.

In the case of the voltage modulation method using an analog signal, an amplification circuit using, for example, an operational amplifier or the like can be used as the modulation signal generator 107, and a level shift circuit or the like can be added as necessary. In the case of the pulse width modulation method, for example, a voltage controlled oscillator (VCO) can be employed, and an amplifier for amplifying the voltage up to the driving voltage of the electron-emitting device can be added as necessary.

In the image forming apparatus of the present invention which can take such a configuration, each of the electron-emitting devices is provided with an external terminal Do.
By applying a voltage via x1 to Doxm and Doy1 to Doyn, electron emission occurs. High voltage terminal 8
A high voltage is applied to the metal back 85 or the transparent electrode (not shown) via the, and the electron beam is accelerated. The accelerated electrons collide with the fluorescent film 84 and emit light to form an image.

The configuration of the image forming apparatus described here is an example of the image forming apparatus of the present invention, and various modifications are possible based on the technical idea of the present invention. N for input signal
Although the TSC system has been described, the input signal is not limited to this, and a PAL, SECAM system, or other TV signal including a larger number of scanning lines (eg, a high-quality TV including the MUSE system). A method can also be adopted.

Next, an electron source and an image forming apparatus having the ladder-type arrangement will be described with reference to FIGS. 21 and 22. FIG.

FIG. 21 is a schematic diagram showing an example of a ladder-type electron source. In FIG. 21, reference numeral 110 denotes an electron source substrate, and 111 denotes an electron-emitting device. 112 denotes common wirings Dx1 to Dx10 for connecting the electron-emitting devices 111.
These are drawn out as external terminals. A plurality of electron-emitting devices 111 are arranged on the substrate 110 in parallel in the X direction (this is called an element row). A plurality of the element rows are arranged to constitute an electron source. By applying a drive voltage between the common wires of each element row, each element row can be driven independently. That is, a voltage equal to or higher than the electron emission threshold is applied to an element row in which an electron beam is to be emitted, and a voltage equal to or lower than the electron emission threshold is applied to an element row in which an electron beam is not desired to be emitted. The common wirings Dx2 to Dx9 located between the element rows are, for example, Dx2 and Dx3,
Dx4 and Dx5, Dx6 and Dx7, and Dx8 and Dx9 may be formed as one and the same wiring.

FIG. 22 is a schematic diagram showing an example of a panel structure in an image forming apparatus provided with a ladder type electron source. Reference numeral 120 denotes a grid electrode, 121 denotes an opening through which electrons pass, Dox1 to Doxm denote external terminals, and G1 to Gn denote external terminals connected to the grid electrode 120. Reference numeral 110 denotes an electron source substrate in which the common wiring between each element row is the same wiring. In FIG. 22, the same portions as those shown in FIGS. 7 and 21 are denoted by the same reference numerals as those shown in these drawings. An image forming apparatus shown here;
The major difference from the image forming apparatus having the simple matrix arrangement shown in FIG.
Between the grid electrodes 120.

In FIG. 22, a grid electrode 120 is provided between the substrate 110 and the face plate 86. The grid electrode 120 is for modulating the electron beam emitted from the electron-emitting device 111,
In order to allow an electron beam to pass through stripe-shaped electrodes provided orthogonally to the ladder-type element rows, one circular opening 121 is provided for each element. The shape and arrangement position of the grid electrode are not limited to those shown in FIG. For example, a large number of passage openings can be provided in a mesh shape as openings, and a grid electrode can be provided around or near the electron-emitting device.

The external terminals Dox1 to Doxm and the external terminals G1 to Gn are electrically connected to a control circuit (not shown).

In the image forming apparatus of this embodiment, a modulation signal for one line of an image is simultaneously applied to the grid electrode rows in synchronization with sequentially driving (scanning) the element rows one by one. This makes it possible to control the irradiation of each electron beam to the phosphor and display an image one line at a time.

The image forming apparatus of the present invention described above is a display apparatus of a television broadcast, a display apparatus such as a video conference system and a computer, and an image forming apparatus as an optical printer using a photosensitive drum or the like. Etc. can also be used.

[0156]

EXAMPLES The present invention will be described below with reference to specific examples. However, the present invention is not limited to these examples, and the present invention is not limited to these examples. This includes the case where the element is replaced or the design is changed.

[Embodiment 1] FIG. 10 is a schematic diagram showing a surface treatment apparatus of Embodiment 1. The present embodiment is a surface treatment apparatus in which a treatment agent inlet to a treatment container is movably formed in the treatment container. In FIG. 10, reference numeral 200 denotes a substrate, 202 denotes a processing container in which the substrate is placed, 203 denotes a processing agent supply unit to the processing container, 204 denotes a processing agent introduction port, 205 denotes a processing agent exhaust port, and 206 denotes a processing agent from the processing container. An exhaust unit 301 is an opening / closing unit (valve).

As the treatment agent supply means 203, a supply system as shown in FIG. 11 was used. In FIG. 11, reference numeral 207 denotes a flow meter for adjusting the flow rate of the carrier gas, and reference numeral 208 denotes a container for accommodating the processing agent and hubring the carrier gas.

The treatment agent introduction port 204 used was a line extending from the front to the back as shown in FIG. 12 and whose discharge direction could be changed by changing the inclination angle.

As the treatment agent exhaust means 206, an exhaust system constituted by a dry pump or the like was used. Further, between the processing agent supply means 203 and the processing agent introduction port 204, the processing agent exhausting means 2 is provided.
06 between the processing agent exhaust port 205 and the processing agent exhaust port 205.
A valve or the like is provided.

In this apparatus, as shown in FIGS. 10 and 12, the discharge direction can be changed by a linear nozzle. 12 (a) to 12 (c) show FIG.
0 shows that the tip nozzle portion of the processing agent introduction port 204 changes its direction when viewed from the same front direction,
FIG. 12D shows a case where FIG. 1 is viewed from the side.

In the surface treatment apparatus of the present invention, since the treatment agent inlet 204 is formed movably in the treatment container 202, the treatment agent inlet 204 is formed in the entire container as compared with the case where the inlet is used in a fixed state. It became easy to supply the agent, and the uniformity of the atmosphere in the container was improved.

Next, an example of a substrate surface treatment method performed by using the surface treatment apparatus of this embodiment will be described.

As a carrier gas, nitrogen was used.
As a treating agent, D is a kind of silane coupling agent.
DS (dimethyldiethoxysilane) was used. Treatment agent D
The DS is supplied into the processing vessel by bubbling nitrogen of the carrier gas into the DDS so that the carrier gas has a DDS atmosphere. The substrate to be processed used was one on which element electrodes, row direction wiring, column direction wiring, and an interlayer insulating layer were formed.

As a processing procedure, first, a substrate to be processed is set in a processing container. Next, the inside of the processing container is evacuated using an exhaust unit. Then, the processing agent is supplied from the processing agent supply unit until the inside of the processing container becomes atmospheric pressure. Next, processing is performed for 40 minutes in a state where the inside of the processing container is at atmospheric pressure. Then, after the processing agent is exhausted using the processing agent exhaust means, the inside of the processing container is returned to the atmospheric pressure by opening a leak valve (not shown).
Finally, the process was performed in the order of taking out the substrate.

For the substrate subjected to the above surface treatment,
When droplets of an aqueous solution containing an organic metal were applied to each device electrode by an ink-jet method of a pable jet method, droplets having a desired shape were obtained with little variation.

[Embodiment 2] FIG. 13 is a schematic diagram showing a surface treatment apparatus of Embodiment 2. This embodiment is a surface treatment apparatus provided with a substrate moving mechanism. In FIG. 13, 2
00 is a substrate, 202 is a processing container in which the substrate is placed, 203
Denotes a processing agent supply unit to the processing container, 204 denotes a processing agent introduction port, 205 denotes a processing agent exhaust port, 206 denotes a processing agent exhaust unit from the processing container, 209 denotes a substrate rotating mechanism, and 210 denotes a plurality of substrates. Substrate cassette.

As the processing agent supply means 203, the first embodiment
The same supply system was used. The treatment agent exhaust means 206 includes:
An exhaust system composed of a dry pump and the like was used. An opening / closing unit 301 such as a valve is provided between the processing agent supply unit 203 and the processing agent introduction port 204 and between the processing agent exhaust unit 206 and the processing agent exhaust port 205.

The substrate cassette 210 includes the substrate rotating mechanism 20.
9 and the substrate rotation mechanism 209 operates,
The substrate 200 rotates around the substrate center together with the cassette.

In this apparatus, during the surface treatment, the substrate 20
By rotating 0, even when the processing agent concentration is distributed between the inlet side and the outlet side of the processing agent in the processing container 202, the influence can be reduced.
The influence of the time until the treatment agent reaches the entire inside of the container in the initial stage of introduction of the treatment agent can be reduced.

[Embodiment 3] FIG. 15 is a schematic diagram showing a surface treatment apparatus of Embodiment 3. In this embodiment, a diffusion plate is provided in a processing container. In FIG. 15, reference numeral 201 denotes a substrate, 202 denotes a processing container in which the substrate is set, 203 denotes a processing agent supply unit to the processing container, 204 denotes a processing agent inlet,
Reference numeral 5 denotes a processing agent exhaust port, and reference numeral 206 denotes a processing agent exhaust means from the processing container.

As the treatment agent supply means 203, the first embodiment
Similarly, a supply system as shown in FIG. 11 was used. As the treatment agent exhausting means 206, an exhaust system composed of a dry pump or the like was used. An opening / closing unit such as a valve is provided between the processing agent supply unit 203 and the processing agent introduction port 204 and between the processing agent exhaust unit 206 and the processing agent exhaust port 205. As the diffusion plate 212, a mesh-shaped metal plate was used.

In this apparatus, since the diffusion plate 212 is provided in the processing container 202, the flow of the processing agent in the processing container 202 is less likely to be uneven, and the processing agent can be easily supplied to the entire container. The uniformity of the atmosphere in the container is improved.

[Embodiment 4] FIG. 16 is a schematic diagram showing a surface treatment apparatus of Embodiment 4. In the present embodiment, a processing agent introduction port is provided at the center of the processing container, and the processing agent exhaust port is disposed on a surface opposed to the substrate to be processed. The substrate is vertical, and the substrate is placed on both sides of the processing agent introduction port. In FIG. 16, 201 is a substrate, 202 is a processing container in which the substrate is placed,
Reference numeral 203 denotes a processing agent supply unit to the processing container, reference numeral 204 denotes a processing agent introduction port provided at the center of the processing container, and reference numeral 205 denotes a processing agent exhaust port provided at both ends of the processing container with the substrate installation portion interposed therebetween. . Further, the substrate 200 is installed perpendicularly to the inlet port and the outlet port so as not to block the flow of the processing agent from the inlet port (face) to the outlet port (face). 20
Reference numeral 6 denotes a processing agent exhaust means from the processing container.

As the treatment agent supply means 203, the first embodiment
Similarly, a supply system as shown in FIG. 11 was used. An exhaust system constituted by a dry pump or the like was used as the treatment agent exhaust means 206. Further, between the processing agent supply means 203 and the processing agent introduction port 204, the processing agent exhaust means 206 and the processing agent exhaust port 2 are provided.
Between 05, opening / closing means 301 such as a valve is provided.

In this apparatus, the treatment agent inlet 204,
The processing agent exhaust port 205 is disposed on the surface facing the substrate 200 with the substrate 200 interposed therebetween, and the processing agent exhaust port 205 is disposed perpendicular to the surface facing the substrate 200. However, when the processing agent is introduced into the container, the flow of the processing agent is not obstructed by the substrate, the processing agent easily flows evenly to each substrate, and the variation in processing between the substrates can be reduced. it can.

[Embodiment 5] FIG. 17 is a schematic diagram showing a surface treatment apparatus of Embodiment 5. This embodiment has a treatment agent circulation system. In FIG. 17, 200 is a substrate,
Reference numeral 202 denotes a processing container for installing a substrate, 203 denotes a processing agent supply unit to the processing container, 204 denotes a processing agent introduction port, 205 denotes a processing agent exhaust port, and 206 denotes a processing agent exhaust unit from the processing container.

As the treatment agent supply means 203, the first embodiment
Similarly, a supply system as shown in FIG. 11 was used. An exhaust system including a dry pump or the like was used as the treatment agent exhaust unit 206. An opening / closing unit 301 such as a valve is provided between the processing agent supply unit 203 and the processing agent introduction port 204 and between the processing agent exhaust unit 206 and the processing agent exhaust port 205.

In the present invention, a processing agent circulation system 213 using a membrane pump is provided as a processing agent circulation pump, and it is possible to circulate a carrier gas containing a processing agent in the processing container 202.

In this apparatus, the processing agent supply means 203
After supplying the carrier gas containing the treating agent into the treating container 202 from the container, the carrier gas containing the treating agent in the container is circulated and stirred by using the treating agent circulating system 213, whereby the concentration of the treating agent in the container is increased. Irregularities can be prevented. Further, even when the treatment agent concentration in the container has a distribution, it is easy to provide a uniform atmosphere in a short time.

[Embodiment 6] FIG. 23 is a schematic diagram showing a surface treatment apparatus of Embodiment 6. This embodiment is another example having a treatment agent circulation system. In FIG. 23, reference numeral 200 denotes a substrate; 202, a processing container in which the substrate is placed; 203, a processing agent supply unit for the processing container;
Denotes a processing agent exhaust port, and 206 denotes a processing agent exhaust means from the processing container.

As the treatment agent supply means 203, a supply system similar to that shown in FIG. 11 was used, and the carrier gas supplied was a carrier gas alone and a carrier gas containing a treatment agent supplied from a circulation system. It is possible to switch and use both. The treatment agent exhaust means 206 includes:
An exhaust system composed of a dry pump and the like was used. Also,
Between the processing agent supply means 203 and the processing agent introduction port 204, and between the processing agent exhaust means 206 and the processing agent exhaust port 205,
Opening / closing means 301 such as a valve is provided.

In this embodiment, a treating agent circulating system 213 using a membrane pump as a treating agent circulating pump is used.
And the carrier gas containing the processing agent in the processing container 202 can be circulated.

In this apparatus, the processing agent supply means 203
Supply the carrier gas containing the treating agent into the treating container 202 from the carrier gas 202 and then introduce the carrier gas 3 into the treating agent circulating system 213.
By circulating and agitating the carrier gas containing the treatment agent in the container by utilizing 02, it is possible to prevent the concentration of the treatment agent in the container from becoming uneven. In addition, even when the treatment agent concentration in the container has a distribution, it is easy to provide a uniform atmosphere in a short time.

[Seventh Embodiment] FIG. 18 is a schematic diagram showing a surface treatment apparatus of a seventh embodiment. This embodiment has a processing agent pressure control circuit. In FIG. 18, reference numeral 200 denotes a substrate, 202 denotes a processing container in which the substrate is placed, 203 denotes a processing agent supply unit to the processing container, 204 denotes a processing agent inlet, 21
A sensor 4 detects the pressure of the carrier gas containing the processing agent in the processing container. 205 is a processing agent exhaust port,
Reference numeral 206 denotes a processing agent exhaust unit from the processing container, and 215 denotes a processing agent pressure control circuit that issues a command to a valve between the processing agent exhaust unit and the processing agent exhaust port based on information from a sensor.

As the processing agent supply means 203, the first embodiment
Similarly, a supply system as shown in FIG. 11 was used. As the treatment agent exhausting means 206, an exhaust system composed of a dry pump or the like was used. An opening / closing unit 301 such as a valve is provided between the processing agent supply unit 203 and the processing agent introduction port 204 and between the processing agent exhaust unit 206 and the processing agent exhaust port 205. , Treatment agent exhaust means 206
The valve 301 between the processing agent exhaust port 205 and the processing agent exhaust port 205 can adjust the amount of exhaust by a command from the processing agent pressure control circuit 215. For example, when the pressure in the processing container 202 exceeds the atmospheric pressure, exhaust is performed. You can use it to get started.

In this apparatus, since the pressure of the processing agent (carrier gas containing the processing agent) can be adjusted by the information from the sensor 214 regarding the processing agent information in the processing container 202, the control of the processing agent in the container can be further improved. Becomes easier.

[Eighth Embodiment] FIG. 19 is a schematic view showing a surface treatment apparatus of an eighth embodiment. This embodiment has a processing agent concentration control circuit. In FIG. 19, reference numeral 200 denotes a substrate, 202 denotes a processing container in which the substrate is placed, 203 denotes a processing agent supply unit to the processing container, 204 denotes a processing agent inlet, 21
Reference numeral 6 denotes a sensor for detecting the concentration of the processing agent in the processing container. Reference numeral 205 denotes a processing agent exhaust port, reference numeral 206 denotes a processing agent exhausting means from the processing container, reference numeral 217 denotes a valve between the processing agent supply means and the processing agent introduction port based on information from a sensor, and processing agent exhausting means and processing agent exhausting. This is a processing agent concentration control circuit that issues a command to a valve between the opening and the mouth.

As the treatment agent supply means 203, the first embodiment
Similarly, a supply system as shown in FIG. 11 was used. An exhaust system composed of a dry pump or the like was used as the treatment agent exhaust means 206. Further, an opening / closing unit such as a valve is provided between the processing agent supply unit 203 and the processing agent introduction port 204 and between the processing agent exhaust unit 206 and the processing agent exhaust port 205. In response to a command from the processing agent concentration control circuit 217 receiving the information from the sensor 216, the valve 301 between the processing agent supply means 203 and the processing agent introduction port 204, the processing agent exhaust means 206 and the processing agent exhaust port 205 are connected. The intermediate valve 301 is adjusted to adjust the supply amount and exhaust amount of the processing agent to control the processing agent concentration in the container.

In the present apparatus, the concentration of the processing agent can be adjusted based on the information from the sensor 216 on the processing agent information in the processing container 202, so that the control of the processing agent concentration in the container is more reliable and easier.

[Embodiment 9] The basic structure of an electron-emitting device according to the present invention is the same as that of FIG. FIG. 24 shows a substrate on which ten electron-emitting devices similar to those of FIG. 1 are arranged.

Hereinafter, a method for manufacturing an electron-emitting device according to the present invention will be described step by step with reference to FIGS.

Step-1 A device electrode pattern (RD-2000N-41 manufactured by Hitachi Chemical Co., Ltd.) was formed on the cleaned blue plate glass substrate 1, and Pt having a thickness of 50 nm was deposited by vacuum evaporation. The photoresist pattern was dissolved in an organic solvent, and the deposited film was lifted off to form device electrodes 2 and 3. The element electrode interval L was 30 microns. Then, the substrate was washed with pure water.

Step-2 Next, the substrate 1 on which the element electrodes 2 and 3 were formed was subjected to pure water ultrasonic cleaning and hot water cleaning at 80 ° C., and was pulled up and dried.

Step-3 First, the substrate 1 prepared in Step-2 was placed in a processing vessel. After the inside of the processing container is evacuated using the evacuation unit, the processing agent is supplied from the processing agent supply unit until the inside of the processing container reaches atmospheric pressure. And it processed for 40 minutes in the state of the inside of a processing container being atmospheric pressure. Next, after the treatment agent was evacuated using the evacuation means, the inside of the treatment container was returned to the atmospheric pressure by opening a leak valve (not shown). Finally, the substrate was taken out of the processing container.

DDS (dimethyldiethoxysilane) was used as a treating agent, and nitrogen was used as a carrier gas. DDS is supplied into the processing vessel together with the carrier gas. As the surface treatment apparatus, the same apparatus as that described in Example 3 was used.

The processing time was set to 40 minutes when the blue glass substrate used in this example and the substrate made of Pt used for the device electrode under the same conditions were processed in 40 minutes, respectively. The contact angles to the aqueous solution of the Pd organometallic compound described later were 45 degrees and 48 degrees, respectively.

Step-4 Droplets of an aqueous solution of a Pd organometallic compound (Pd concentration 0.15%), isopropyl alcohol 15%, ethylene glycol 1%, and polyvinyl alcohol 0.05% were formed by a bubble jet method using an inkjet method. -3 was applied four times between the device electrodes on the substrate subjected to the surface treatment.

Step-5 The sample prepared in step-4 was fired at 350 ° C. in the air. The conductive film 4 made of PdO thus formed was formed.

Through the above steps, the device electrodes 2 and 3 and the conductive film 4 were formed on the substrate 1.

Next, it was set in the measuring apparatus of FIG. 5, evacuated by a vacuum pump, and after reaching a degree of vacuum of 1.3 × 10 ⁻⁶ Pa, the resistance of the conductive film on the element electrode was measured. A pulse voltage of 0.1 V was applied between the device electrodes 2 and 3 of each device from a power source, and a current flowing between the device electrodes was measured. The voltage waveform of the pulse has a pulse width of 0.1 m.
sec, the pulse interval was 10 msec, the measurement was repeated ten times, and the average value was taken as the resistance value.

The above-described steps are performed for ten substrates,
When the resistance value is measured, the average value of 10 elements is 2000Ω.
The variation was as small as ± 80Ω. This is considered to be because the shape when the aqueous solution containing the organic metal was applied as droplets by the ink jet method was stabilized, so that the resistance value of the conductive film also had little variation among the substrates.

[Embodiment 10] In this embodiment, an electron-emitting device is manufactured by performing a number of further steps after Step-5 in Embodiment 9. An element similar to that shown in FIG. 1 was prepared, and the same steps were performed for the comparative example.

Hereinafter, the steps after the step-5 will be described step by step.

Step-6 Subsequently, a forming step was performed in the measuring apparatus shown in FIG. When current was applied between the device electrodes 2 and 3, a crack was formed at the portion of the conductive film 4. The voltage waveform of the energization forming was a pulse waveform, and a voltage pulse for increasing the pulse peak value from 0 V in 0.1 V steps was applied. The pulse width and pulse interval of the voltage waveform are 1 msec and 10 msec, respectively.
Rectangular wave. The end of the energization forming process
It was determined that the resistance value of the conductive film reached 1 MΩ or more. FIG. 25 shows a forming waveform used in this embodiment. still,
In the device electrodes 2 and 3, one of the electrodes is set to a low potential,
The voltage is applied with the other being on the high potential side.

Step-7 The element after the forming was subjected to a process called an activation step. The activation step is to form the carbon inside the crack formed by the forming as described above so that the crack becomes narrower, so that the device current _If and the emission current _{Ie are formed.}
Is a step that changes significantly.

In the activation step, acetone gas was introduced into the measuring apparatus to 1.3 × 10 ^-1 Pa, and the pulse peak value was increased to 15 × 10 ^-1 Pa.
V, pulse width of 1 msec, pulse interval of 10 msec, and application of a rectangular pulse was repeated for 20 minutes. FIG. 26 shows a pulse waveform used in the activation step. In this embodiment, the low and high potentials are applied to the device electrodes 2 and 3 alternately at every pulse interval.

Step-8 Subsequently, a stabilizing step was performed. The stabilization step is a step of exhausting an organic gas present in an atmosphere or the like in the vacuum vessel, suppressing the deposition of carbon or a carbon compound, and stabilizing the device current _If and the emission current _Ie . 250 whole vacuum container
The organic substance molecules adsorbed on the inner wall of the vacuum vessel and the electron-emitting device were evacuated by heating at ℃. At this time, the degree of vacuum is 1.
It was 3 × 10 ⁻⁶ Pa. Thereafter, the characteristics of the electron-emitting device were measured at this degree of vacuum.

The above process is performed for 10 substrates, and
When the measurement of electron emission characteristics, the device current at an average value of 10 elements I _f is 2.0 mA ± 0.02 mA, the emission current I _e
Was 3.0 μA ± 0.04 μA with little variation.

As described above, it has been found that adjusting the surface energy of the substrate also contributes to a reduction in variations in the characteristics of the electron-emitting devices.

[Embodiment 11] This embodiment is an example in which an image forming apparatus is manufactured by the manufacturing process shown in FIG.
In FIG. 9, only the electron source substrate closely related to the present invention is described in detail. FIG. 27A is a plan view of a part of the electron source, and FIG. 27B is a longitudinal sectional view thereof. In FIG. 27, 191 is a substrate, 198 is Dxm
199, a column direction wiring corresponding to Dyn; 194, a conductive film; 192, 193, device electrodes; and 197, an interlayer insulating layer. The image forming apparatus of this embodiment is the same as that of FIG. 8, but uses an electron source substrate 191 as a rear plate.

Hereinafter, a method for manufacturing an electron source will be specifically described in the order of steps.

Step-1 An element electrode 19 was placed on a cleaned blue glass substrate 191.
2,193 was prepared by the offset printing method. The element electrode interval L was 20 μm, and the element electrode width W was 125 μm. Next, a column-directional wiring 199 having a thickness of 10 μm and a thickness of 3
A 0 μm interlayer insulating layer 197 and a 25 μm-thick row-direction wiring 198 were sequentially formed by a screen printing method.

Step-2 The row-direction wiring 198 and the column-direction wiring 19 created in Step-1
9. The substrate 191 on which the device electrodes 192 and 193 are formed is
The substrate was subjected to pure water ultrasonic cleaning and hot water cleaning at 80 ° C., and was pulled up and dried.

Step-3 First, the substrate 191 prepared in Step-2 was set in a processing container. After the inside of the processing container is evacuated using the evacuation unit, the processing agent is supplied from the processing agent supply unit until the inside of the processing container reaches atmospheric pressure. Then, when the inside of the processing container is at atmospheric pressure, 40
Minutes. Next, after the treatment agent was evacuated using the evacuation means, the inside of the treatment container was returned to the atmospheric pressure by opening a leak valve (not shown). Finally, the substrate was taken out of the processing container.

DDS (dimethyldiethoxysilane) was used as a treating agent, and nitrogen was used as a carrier gas. DDS is supplied into the processing vessel together with the carrier gas. As the surface treatment apparatus, the same apparatus as that described in Example 6 was used.

Step-4 Drops of an aqueous solution of 0.15% of a Pd organometallic compound, 15% of isopropyl alcohol, 1% of ethylene glycol, and 0.05% of polyvinyl alcohol were applied to each of the element electrodes 192 and 192 by a piezo jet type inkjet method. 193 and four times between the device electrodes.

Step-5 The sample prepared in step-4 was fired at 350 ° C. in the air. The conductive film 194 made of PdO thus formed
Was formed.

Through the above steps, the row wiring 198, the column wiring 199, the device electrodes 192, 1
93, a conductive film 194 and the like were formed.

Step-6 Next, a face plate was formed. The face plate had a configuration in which a fluorescent film on which a phosphor was disposed and a metal back were formed on the inner surface of a glass substrate. The arrangement of the phosphors is
A black stripe between the three primary color phosphors was provided. As a material of the black stripe, a commonly used material mainly composed of graphite was used. These were all formed by a screen printing method.

Step-7 A face plate was sealed via a support frame using the substrate formed in steps-1 to 5 as a rear plate. An exhaust pipe used for ventilation is previously bonded to the support frame.

Step-8 After evacuating to 1.3 × 10 ⁻⁵ Pa, each wiring Dxm, Dyn
Forming was performed line by line with a manufacturing apparatus capable of supplying a voltage to each element. The forming conditions are the same as in the tenth embodiment.

Step-9 After evacuating to 1.3 × 10 ⁻⁵ Pa, acetone was added to 1.3 × 1 ⁻⁵ Pa.
0 ^-1 Pa from the exhaust pipe, and each wiring Dxm, Dyn
In a manufacturing apparatus capable of supplying a voltage to each element, a voltage was applied such that a pulse voltage similar to that in Example 7 was applied to each element in line sequential scanning, and an activation step was performed. The activation step was completed when the device current was 3 mA on average for each line when a voltage was applied for 25 minutes for each line.

Step-10 Subsequently, the air was sufficiently exhausted from the exhaust pipe, and then the air was exhausted while heating the entire vessel at 250 ° C. for 3 hours. Finally, the getter was flushed and the exhaust pipe was sealed.

A driving circuit for performing a television display based on the NTSC television signal shown in FIG. 20 is provided in the image forming apparatus constituted by using the electron sources of the simple matrix arrangement prepared as described above. did.

With such a driving circuit, the external terminals Dox1 to Doxm,
By applying a voltage via Doy1 to Doyn, electron emission occurs. A high voltage is applied to the metal back via the high voltage terminal 87 to accelerate the electron beam. The accelerated electrons collide with the fluorescent film and emit light to form an image.

The image forming apparatus formed by the above-described steps can produce a stable image forming apparatus with little luminance variation and high reproducibility and high yield by inputting the NTSC signal.

[Embodiment 12] FIG. 28 shows an image according to the present invention which is configured to display, on a display panel (FIG. 7), image information provided from various image information sources such as a television broadcast. It is a figure showing an example of a forming device.

In the figure, reference numeral 201 denotes a display panel;
1 is a display panel driving circuit, 1002 is a display controller, 1003 is a multiplexer, 10
04 is a decoder, 1005 is an input / output interface circuit, 1006 is a CPU, 1007 is an image generation circuit, 10
08, 1009 and 1010 are image memory interface circuits, 1011 is an image input interface circuit, 1012 and 1013 are TV signal receiving circuits, 101
Reference numeral 4 denotes an input unit.

When the present image forming apparatus receives a signal containing both video information and audio information, such as a television signal, it naturally reproduces the audio simultaneously with the display of the video. Descriptions of circuits related to reception, separation, reproduction, processing, storage, and the like of audio information that are not directly related to the features of the present invention, a speaker, and the like are omitted.

Hereinafter, the function of each unit will be described along the flow of image signals.

First, the TV signal receiving circuit 1013 is a circuit for receiving a TV signal transmitted using a wireless transmission system such as radio waves or spatial optical communication.

The format of the TV signal to be received is not particularly limited. For example, NTSC, PAL, SEC
Any method such as the AM method may be used. Further, a TV signal comprising a larger number of scanning lines than these, for example, a so-called high-definition TV including the MUSE system is a signal suitable for taking advantage of the display panel suitable for a large area and a large number of pixels. Source.

The T signal received by the TV signal receiving circuit 1013
The V signal is output to the decoder 1004.

The TV signal receiving circuit 1012 is a circuit for receiving a TV signal transmitted using a wired transmission system such as a coaxial cable or an optical fiber. Similarly to the TV signal receiving circuit 1013, the system of the TV signal to be received is not particularly limited, and the TV signal received by this circuit is also output to the decoder 1004.

Image input interface circuit 1011
Is a circuit for capturing an image signal supplied from an image input device such as a TV camera or an image reading scanner. The captured image signal is output to the decoder 1004.

Image memory interface circuit 101
Reference numeral 0 denotes a circuit for capturing an image signal stored in a video tape recorder (hereinafter abbreviated as VTR). The captured image signal is output to a decoder 1004.

Image memory interface circuit 100
Reference numeral 9 denotes a circuit for capturing an image signal stored in the video disk.
004 is output.

Image memory interface circuit 100
Reference numeral 8 denotes a circuit for taking in an image signal from a device storing still image data, such as a still image disk. The taken still image data is input to the decoder 1004.

The input / output interface circuit 1005
A circuit for connecting the display device to an external computer, a computer network, or an output device such as a printer. In addition to inputting and outputting image data and character / graphic information, control signals and numerical data can be input and output between the CPU 1006 of the image forming apparatus and the outside in some cases. .

The image generation circuit 1007 is provided with image data, character / graphic information input from the outside via the input / output interface circuit 1005, or the CPU 100
6 is a circuit for generating display image data based on the image data and character / graphic information output from 6. Inside this circuit, for example, a rewritable memory for storing image data and character / graphic information, a read-only memory storing an image pattern corresponding to a character code, a processor for performing image processing, etc. And other circuits necessary for generating an image.

The display image data generated by this circuit is output to the decoder 1004, but may be output to an external computer network or printer via the input / output interface circuit 1005 in some cases.

The CPU 1006 mainly performs operations related to operation control of the display device and generation, selection and editing of a display image.

For example, a control signal is output to the multiplexer 1003, and image signals to be displayed on the display panel are appropriately selected or combined. In that case, the display panel controller 1
A control signal is generated for 002 to appropriately control the operation of the display device such as the screen display frequency, the scanning method (for example, interlaced or non-interlaced), and the number of scanning lines on one screen. In addition, image data and character / graphic information are directly output to the image generation circuit 1007, or an external computer or memory is accessed via the input / output interface circuit 1005 to convert the image data or character / graphic information. input.

It should be noted that the CPU 1006 may be involved in operations for other purposes. For example, it may directly relate to a function of generating and processing information, such as a personal computer or a word processor. Alternatively, as described above, the input / output interface circuit 1005
The computer may be connected to an external computer network via a computer, and work such as numerical calculation may be performed in cooperation with an external device.

The input unit 1014 is used by a user to input commands, programs, data, and the like to the CPU 1006. For example, in addition to a keyboard and a mouse, various inputs such as a joystick, a barcode reader, and a voice recognition device. Input devices can be used.

The decoder 1004 converts the various image signals input from the above 1007 to 1013 into three primary color signals,
Alternatively, it is a circuit for inversely converting a luminance signal into an I signal and a Q signal. As shown by the dotted line in FIG.
4 preferably has an image memory inside. This is for handling a television signal that requires an image memory when performing inverse conversion, such as the MUSE method.

The provision of the image memory facilitates the display of a still image. Alternatively, the image generation circuit 1007
And cooperate with the CPU 1006 to perform image thinning, interpolation,
There is an advantage that image processing and editing including enlargement, reduction, and composition become easy.

The multiplexer 1003 is connected to the CPU 1
A display image is appropriately selected based on a control signal input from 006. That is, the multiplexer 1003
Selects a desired image signal from the inversely converted image signals input from the decoder 1004 and selects a driving circuit 1001
Output to In that case, by switching and selecting an image signal within one screen display time, it is also possible to divide one screen into a plurality of areas and display different images depending on the areas, as in a so-called multi-screen television. .

Display panel controller 1002
Is a circuit for controlling the operation of the drive circuit 1001 based on a control signal input from the CPU 1006.

As a signal related to the basic operation of the display panel, for example, a signal for controlling an operation sequence of a drive power source (not shown) for the display panel is output to the drive circuit 1001. For example, a signal for controlling a screen display frequency and a scanning method (for example, interlaced or non-interlaced) is output to the driving circuit 1001 as a signal related to the display panel driving method. In some cases, a control signal relating to image quality adjustment such as luminance, contrast, color tone, and sharpness of a display image may be output to the driving circuit 1001.

The drive circuit 1001 is a circuit for generating a drive signal to be applied to the display panel 201, based on an image signal input from the multiplexer 1003 and a control signal input from the display panel controller 1002. It works.

The function of each section has been described above. With the configuration illustrated in FIG. 28, in the present image forming apparatus, image information input from various image information sources can be displayed on the display panel 201. . That is, various image signals including television broadcasting are transmitted to the decoder 10.
After the inverse conversion in 04, the signal is appropriately selected in the multiplexer 1003 and input to the drive circuit 1001.
On the other hand, the display controller 1002 generates a control signal for controlling the operation of the drive circuit 1001 according to an image signal to be displayed. The drive circuit 1001 controls the display panel 201 based on the image signal and the control signal.
Is applied with a drive signal. Thus, an image is displayed on the display panel 201. These series of operations are totally controlled by the CPU 1006.

In the present image forming apparatus, the image memory built in the decoder 1004, the image generating circuit 100
7 and information selected from the information, as well as, for example, enlargement, reduction, rotation, movement, edge enhancement, thinning, interpolation, color conversion, image aspect ratio conversion, etc., for the image information to be displayed. It is also possible to perform image processing such as initial image processing and image editing such as combining, erasing, connecting, exchanging, and fitting. Although not specifically mentioned in the description of the present embodiment, a dedicated circuit for processing and editing audio information may be provided as in the above-described image processing and image editing.

Therefore, the present image forming apparatus can be used as a television broadcast display device, a video conference terminal device, an image editing device that handles still images and moving images, a computer terminal device,
It can be equipped with the functions of a word processor and other office terminal equipment, game machines, and the like, and has a very wide range of applications for industrial or consumer use.

The display device shown in FIG. 28 can be variously modified based on the technical concept of the present invention. For example, FIG.
Of the eight components, circuits relating to functions that are unnecessary for the intended use may be omitted. Conversely, additional components may be added depending on the purpose of use. For example, when the present display device is applied as a videophone, it is preferable to add a transmission / reception circuit including a television camera, an audio microphone, an illuminator, and a modem to the components.

In the present display device, in particular, it is easy to reduce the thickness of a display panel using an electron-emitting device as an electron beam source, so that the depth of the display device can be reduced. In addition, since it is easy to increase the area, the brightness is high, and the viewing angle characteristics are excellent, it is possible to display an image full of presence and full of power with good visibility. Further, by using an electron source having a large number of electron-emitting devices having uniform characteristics, a high-quality color flat television that is very uniform and bright compared to a conventional display device has been realized.

[0258]

As described above, according to the surface treatment apparatus of the present invention, a large-area substrate can be subjected to surface treatment at a high throughput and at a low cost with little in-plane variation and variation in processing batch. . Therefore, by performing surface treatment using the present apparatus, an electron-emitting device with less fluctuation can be manufactured at high throughput and at low cost.

Also, a large number of electron-emitting devices are arranged and formed,
An electron source that emits electrons in response to an input signal can be manufactured stably and with high yield.

Further, in an image forming apparatus using such an electron source, a bright, high-quality image forming apparatus with a low current can be obtained.
For example, a color flat television is realized.

[Brief description of the drawings]

FIG. 1 is a schematic view showing an example of an electron-emitting device according to the present invention.

FIG. 2 is a diagram illustrating a method for manufacturing an electron-emitting device according to the present invention.

FIG. 3 is a schematic diagram showing an example of a voltage waveform in an energization process that can be employed in manufacturing the electron-emitting device of the present invention.

FIG. 4 is a schematic configuration diagram illustrating an example of a vacuum processing apparatus (measurement evaluation apparatus) that can be used for manufacturing the electron-emitting device of the present invention.

FIG. 5 is a diagram showing the electron emission characteristics of the electron-emitting device of the present invention.

FIG. 6 is a schematic diagram illustrating an example of an electron source having a simple matrix arrangement according to the present invention.

FIG. 7 is a schematic diagram illustrating an example of a display panel of the image forming apparatus of the present invention.

FIG. 8 is a schematic diagram illustrating an example of a fluorescent film in a display panel.

FIG. 9 is a diagram illustrating a manufacturing process of the image forming apparatus of the present invention.

FIG. 10 is a schematic view showing a surface treatment apparatus in which a treatment agent inlet is movably formed in the treatment container of the present invention.

FIG. 11 is a schematic diagram showing a supply system in the surface treatment apparatus of the present invention.

FIG. 12 is a schematic view showing details of a treatment agent inlet of the surface treatment apparatus of FIG. 10;

FIG. 13 is a schematic view showing a surface treatment apparatus provided with a substrate rotating mechanism in a treatment container of the present invention.

FIG. 14 is a schematic diagram showing a surface treatment apparatus provided with a substrate up-down mechanism in a treatment container of the present invention.

FIG. 15 is a schematic view showing a surface treatment apparatus provided with a means for diffusing a substrate into a treatment container of the present invention.

FIG. 16 is a surface treatment apparatus in which a treatment agent introduction port and a treatment agent exhaust port of the present invention are arranged on surfaces opposed to each other across a substrate to be treated, and the substrate is arranged perpendicular to the opposed surface. FIG.

FIG. 17 is a schematic view showing an example of a surface treatment apparatus having a treatment agent circulation system of the present invention.

FIG. 18 is a schematic view showing a surface treatment apparatus having a control circuit for issuing a command to a treatment agent exhaust means based on treatment agent information from a pressure sensor according to the present invention.

FIG. 19 is a schematic diagram showing a surface treatment apparatus having a control circuit for issuing a command to a treatment agent exhaust unit based on treatment agent information from a concentration sensor of the present invention.

FIG. 20 is a block diagram illustrating an example of a drive circuit for performing display according to an NTSC television signal on the image forming apparatus of the present invention.

FIG. 21 is a schematic view illustrating an example of an electron source having a ladder-type arrangement according to the present invention.

FIG. 22 is a schematic diagram illustrating an example of a display panel of the image forming apparatus of the present invention.

FIG. 23 is a schematic view showing another example of the surface treatment apparatus having the treatment agent circulation system of the present invention.

FIG. 24 is a view showing a substrate on which ten electron-emitting devices of Example 9 are arranged.

FIG. 25 is a schematic diagram showing a voltage waveform of energization forming in Example 10.

FIG. 26 is a schematic diagram showing voltage waveforms in an activation step in Example 10.

FIG. 27 is a schematic view showing a part of the electron source according to the eleventh embodiment.

FIG. 28 is a block diagram of an image display device according to a twelfth embodiment.

FIG. 29 is a schematic view of a conventional surface conduction electron-emitting device.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Substrate 2, 3 Device electrode 4 Conductive film 5 Electron emission part 31 Surface treatment device 33 Droplet of solution containing organic metal applied on substrate 50 Ammeter for measuring device current _If 51 51 Electron emission Power supply 52 for applying element voltage _Vf to the device 52 Ammeter for measuring emission current _Ie emitted from electron emission section 5 53 High voltage power supply for applying voltage to anode electrode 54 Electron emission section 5 Anode electrode for capturing emitted electrons 55 Vacuum container 56 Exhaust pump 61 Substrate on which element electrodes and the like are formed 63 Surface energy measuring means 64 Comparison circuit for comparing measured values with reference values 65 Surface energy adjustment Device control circuit 71 Electron source board 72 X direction wiring 73 Y direction wiring 74 Electron emitting element 75 Connection 81 Rear plate 82 Support frame 83 Glass Substrate 84 Fluorescent film 85 Metal back 86 Face plate 87 High voltage terminal 88 Enclosure 91 Black conductive material 92 Phosphor 101 Display panel 102 Scan circuit 103 Control circuit 104 Shift register 105 Line memory 106 Synchronous signal separation circuit 107 Modulation signal generator Vx , Va DC voltage source 110 Electron source substrate 111 Electron emitting element 112 Common wiring for wiring the electron emitting element 120 Grid electrode 121 Opening for passing electrons 191 Substrate 198 Row direction wiring corresponding to 198 Dxm 199 Dyn corresponding to Column direction wiring 194 Conductive film 192, 193 Device electrode 197 Interlayer insulating layer 200 Substrate 201 Display panel 202 Processing container 203 Processing agent supply means 204 Processing agent introduction port 205 Processing agent exhaust port 206 Processing agent exhaust means 207 Meter 208 Container 209 Substrate rotating mechanism 210 Substrate cassette 211 Substrate up / down mechanism 212 Diffusion means (diffusion plate) 213 Processing agent circulation system (processing agent circulation pump) 214 Pressure sensor 215 Processing agent pressure control circuit 216 Concentration sensor 217 Processing agent concentration Control circuit 301 Opening / closing means (valve) 302 Carrier gas 1001 Display panel drive circuit 1002 Display controller 1003 Multiplexer 1004 Decoder 1005 Input / output interface circuit 1006 CPU 1007 Image generation circuit 1008, 1009, 1010 Image memory interface circuit 1011 Image input interface circuit 1012 , 1013 TV signal receiving circuit 1014 Input unit

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01J 9/02 H01L 21/205 H01L 21/205 B41J 3/04 101Z

Claims (32)

[Claims] 1. A surface treatment apparatus for supplying a treatment agent in a gaseous state to a substrate to be treated disposed in a treatment container and performing a surface treatment, comprising: a treatment agent supply unit to the treatment container; a treatment agent introduction port; A processing agent exhaust port, a processing agent exhaust means from the processing container is provided, so that the processing agent discharge direction changes in the processing container,
A surface treatment apparatus characterized in that the treatment agent inlet is movably formed. 2. A surface treatment apparatus for supplying a treatment agent in a gaseous state to a substrate to be treated disposed in a treatment container and performing a surface treatment, comprising: a treatment agent supply unit to the treatment container, a treatment agent introduction port, A surface treatment apparatus comprising: a treatment agent exhaust port; and a treatment agent exhaust means from a treatment container, and a substrate moving mechanism is provided in the treatment container. 3. The surface processing apparatus according to claim 2, wherein the substrate moving mechanism is a substrate rotating mechanism. 4. The surface treatment apparatus according to claim 2, wherein said substrate moving mechanism is a substrate vertical mechanism. 5. A surface treatment apparatus for supplying a treatment agent in a gaseous state to a substrate to be treated disposed in a treatment container and performing a surface treatment, comprising: a treatment agent supply unit to the treatment container; a treatment agent introduction port; A surface treatment apparatus comprising: a treatment agent exhaust port; and a treatment agent exhaust means for exhausting a treatment agent from a treatment container, and having a means for diffusing the treatment agent into the treatment container. 6. The surface treatment apparatus according to claim 5, wherein said diffusion means is a mesh-shaped metal diffusion plate. 7. A surface treatment apparatus for supplying a treatment agent in a gaseous state to a substrate to be treated disposed in a treatment container and performing a surface treatment, comprising: a treatment agent supply unit to the treatment container; a treatment agent introduction port; A processing agent exhaust port, a processing agent exhausting means from the processing container is provided, and the processing agent introduction port and the processing agent exhaust port are disposed on surfaces opposed to each other with the substrate to be processed interposed therebetween; A substrate to be processed is disposed vertically with respect to the surface processing apparatus. 8. The surface treatment apparatus according to claim 7, wherein a treatment agent introduction port is arranged at a central portion of the treatment container, and treatment agent exhaust ports are arranged at both sides. 9. The surface treatment apparatus according to claim 7, wherein a treatment agent introduction port and a treatment agent exhaust port are arranged on both sides of the processing container. 10. A surface treatment apparatus for supplying a treatment agent in a gaseous state to a substrate disposed in a treatment container to perform surface treatment, comprising: a treatment agent supply unit to the treatment container; a treatment agent introduction port; A surface treatment apparatus comprising: a treatment agent exhaust port, a treatment agent exhaust means from a treatment container, and a treatment agent circulation system for circulating and stirring the treatment agent. 11. The surface treatment apparatus according to claim 10, wherein the treatment agent circulation system is connected between a downstream side of the treatment agent supply unit and an upstream side of the treatment agent exhaust unit. 12. The surface treatment apparatus according to claim 10, wherein a carrier gas is introduced into the treatment agent circulation system. 13. A surface treatment apparatus for supplying a treatment agent in a gaseous state to a substrate to be treated disposed in a treatment container and performing a surface treatment, comprising: a treatment agent supply unit to the treatment container; a treatment agent introduction port; A processing agent exhaust port, a processing agent exhausting means from the processing container are provided, a sensor for detecting processing agent information in the processing container, a control circuit for issuing a command based on information from the sensor, and a command from the control circuit. Substrate surface treatment comprising: opening / closing means between a processing agent supply means and a processing agent introduction port, which is opened / closed by a processing agent, and / or opening / closing means between a processing agent exhaust means and a processing agent exhaust port. apparatus. 14. The surface treatment apparatus according to claim 13, wherein the sensor is a pressure sensor. 15. The surface treatment apparatus according to claim 13, wherein the sensor is a density sensor. 16. A step of forming a pair of element electrodes on a substrate, a step of adjusting the surface energy of the substrate on which the element electrodes are formed, a step of applying a solution containing an organic metal to the substrate, A step of forming a conductive film by thermal decomposition; and a forming step of applying an electric current between the device electrodes to form an electron-emitting portion in the conductive film. A method for manufacturing an electron-emitting device, comprising: treating a surface of a substrate using the surface treatment apparatus according to any one of claims 1 to 15. 17. The method according to claim 16, wherein the surface treatment is a hydrophobic treatment. 18. The method according to claim 16, further comprising a step of initializing the surface energy of the substrate before the step of adjusting the surface energy of the substrate. 19. The method for manufacturing an electron-emitting device according to claim 16, wherein the step of applying the solution applies droplets by an inkjet method. 20. The method for manufacturing an electron-emitting device according to claim 19, wherein the ink jet method is a bubble jet method in which bubbles are formed in the solution by thermal energy and the solution is discharged as droplets. 21. The method according to claim 19, wherein the ink jet method is a piezo jet method in which a solution is discharged using mechanical energy. 22. The method according to claim 16, further comprising, after the forming step, a stabilizing step of applying a voltage to the electron-emitting device under a higher degree of vacuum than the forming step.
2. The method for manufacturing an electron-emitting device according to claim 1. 23. The method of manufacturing an electron-emitting device according to claim 16, further comprising an activation step of applying a voltage to the electron-emitting device in the presence of an organic substance after the forming step. Method. 24. The electron-emitting device according to claim 23, further comprising, after the activation step, a stabilizing step of applying a voltage to the electron-emitting element under a higher degree of vacuum than the forming step and the activation step. Manufacturing method. 25. An electron-emitting device manufactured by the method according to claim 16. Description: 26. The electron-emitting device according to claim 25, wherein the electron-emitting device is a surface conduction electron-emitting device. 27. An electron source for emitting electrons in response to an input signal, wherein a plurality of the electron-emitting devices according to claim 25 are arranged on a substrate. 28. The electron source according to claim 27, wherein the plurality of electron-emitting devices are wired in a matrix. 29. The electron source according to claim 27, wherein the plurality of electron-emitting devices are wired in a ladder shape. 30. A method for manufacturing an electron source according to claim 27, wherein a plurality of electron-emitting devices are manufactured by the method according to claim 16. Description: Characteristic method of manufacturing an electron source. 31. An apparatus for forming an image based on an input signal, wherein at least the electron source according to claim 27 and an electron beam emitted from the electron source are irradiated with the image. An image forming apparatus, comprising: an image forming member to be formed. 32. A method of manufacturing the image forming apparatus according to claim 31, wherein the electron source is manufactured by the method according to claim 30.