JP2000222710A - Magneto-resistive thin-film magnetic head and its production - Google Patents

Abstract

PROBLEM TO BE SOLVED: To assure the stable insulation characteristic of an electrode film and an upper shielding film by subjecting the ends of a voltage resistant protective film formed in the state of resist masking of a stencil shape used in a stage for connecting electrodes and the end of a magnetosensitive part to self-alignment so as to approximately align both. SOLUTION: This magnetic head consists of the structure obtained by holding the magnetic domain control film 418 and electrode film 419 installed on both sides of an MR element part 425 between upper and lower shielding films 413 and 423 via gap insulating layer films 414 and 422 and connecting the electrode to both flanks of the MR element part 425. The magnetosensitive part is insulated by an upper gap insulating film 422 and is insulated from an upper shielding film 423 by the voltage resistant protective film 420 and the upper gap insulating film 422. The voltage resistant protective film 420 is formed in the state of resist masking of the stencil shape used in the stage for connecting the magnetic domain control film 418 and the electrode film 419 to both flanks of the MR element part 425. The end (c) of the magnetosensitive part and the ends (d) and d' of the voltage resistant protective film are subjected to self-alignment so as to be approximately aligned.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is used for a large-capacity magnetic storage device, particularly for a magnetic disk device, and uses an inductive head for writing a magnetic signal and a magnetoresistive head for reproducing a magnetic signal. A giant magnetoresistive head (hereinafter collectively referred to as a reproducing head) is used, and is a magnetoresistive thin film magnetic head obtained by laminating and integrating them, and particularly relates to the reproducing head.

[0002]

2. Description of the Related Art FIG. 1 shows a structure of a magnetoresistive thin film magnetic head. As shown in FIGS. 1A and 1B), a reproducing head 103 using a magnetoresistive effect or a giant magnetoresistive effect for reproducing a magnetic signal from an inflow side 102 to an outflow end 101 of a slider, and an inductive head 104 for writing a magnetic signal.
Is arranged. FIG. 1C) shows the element structure of the read head 103 viewed from the medium facing surface.

In the reproducing head, it is necessary to apply a bias magnetic field to the magnetoresistive film 117 in the vertical and horizontal directions in order to suppress Barkhausen noise and obtain an operation region with good linearity. As a method suitable for applying a bias magnetic field, and particularly for a narrow track width, a structure called an abated junction in which a magnetoresistive variable film is arranged only in a magnetically sensitive portion and electrodes are connected to side surfaces of the magnetoresistive variable film. For example, it is disclosed in JP-A-3-125311. Here, the magnetically sensitive portion means a main operation portion of the film in which the electric resistance changes due to an external magnetic field in a portion where the magnetic domain control film 118 is not attached to the surface of the magnetoresistive change film 117.

[0004] By adopting the abated junction structure in this manner, a reproducing head having an excellent sensitivity distribution and a narrow track width has been obtained.

In this reproducing head, an insulating film 112 such as alumina, a lower shield film 113, and a lower gap insulating film 114 are formed on a ceramic substrate 111 such as alumina titanium carbide.
Attached. SAL (Soft Adjacent La
(yer) film 115, a spacer film 116, and a magnetoresistive element portion 125 composed of a magnetoresistance change film 117 are formed. A mushroom-shaped (hereinafter, referred to as a stencil) resist mask (not shown) is formed on the magnetoresistive film 117, and the angle of incidence of the ion beam is controlled using an ion milling device, and the taper etching is performed. The magnetic domain control film 118 and the electrode film 119 are formed by sputtering and connected to the tapered surface of the magneto-sensitive portion. The stencil-shaped resist mask is removed, and the upper gap insulating film 122 is sputtered to form the upper shield film 1.
A reproducing head for reproducing a magnetic signal by adding 23 is obtained.
The electric field concentrates on the bent portion b of the electrode film 119 formed so as to ride on the end a of the magnetoresistive change film 117,
An electric short circuit (hereinafter referred to as a short circuit) easily occurs with the upper shield film 123.

As a method of preventing a short circuit, as shown in FIG. 2, as disclosed in Japanese Patent Application Laid-Open No. 7-192225, a resist mask 240 is formed on a magnetically sensitive portion after an electrode film 219 is formed, alumina or the like is sputtered, and a lift-off method is performed. A method is disclosed in which a pressure-resistant protective film 220 is formed using an alumina film or the like, and then an upper gap insulating film 222 is added.

[0007]

However, Japanese Patent Application Laid-Open No.
When the method of -192225 was applied to the manufacture of a reproducing head having a magnetically sensitive portion having a width of 1.5 μm or less, it was found that it was extremely difficult to reliably cover the magnetically sensitive portion with a resist.

[0008] As shown in FIG.
It can be understood that the width of the portion 40 is smaller, larger, or shifted to the left or right than the magnetic sensing portion, and easily occurs due to variations in exposure and development in the photolithography process. FIG. 3a1) shows a case where the width of the resist mask is smaller than that of the magnetically sensitive part. As shown in FIG. 3a2), the withstand voltage protection film 320 penetrates to the magnetically sensitive part and widens the gap with the upper shield film. FIG. 3b1) shows a case where the width of the resist mask is larger than that of the magnetically sensitive portion. As shown in FIG. 3b2), the withstand voltage protection film 320 comes off the bent portion b of the electrode film 319, and the gap between the electrode film and the upper shield film is lost. Shorts are likely to occur. FIG. 3c1) shows a case where the resist mask is shifted to the left or right. FIG. 3c2) shows an example in which the problems described in FIGS. 3a2) and b2) occur simultaneously.

As described above, the resist mask is set to 1.5
It is very difficult to provide a magnetic sensing part having a width of μm or less, and not only does the added withstand voltage protective film not achieve its initial purpose, but also may cause a problem that the distance from the upper shield film is increased. .

In the field of magnetic recording, it is necessary to increase the linear recording density in addition to the track density in order to increase the areal recording density. In order to increase the linear recording density, it is necessary to reduce the gap length of the reproducing head, that is, the distance between the lower shield film and the upper shield film of the magnetic sensing part. When the gap length is reduced, it becomes difficult to ensure insulation between the magnetic sensing part, the lower shield film, and the upper seed. Since the magnetic domain control film and the electrode film are on the magnetoresistive change film in a region other than the magneto-sensitive portion of the magnetoresistive change film, the portion on which the magnetic domain changes is particularly likely to concentrate an electric field, and it is difficult to secure insulation. . For this reason, the gap length cannot be reduced, which is an obstacle to the improvement of the linear recording density.

An object of the present invention is to provide a small gap between the lower shield film and the upper shield film, that is, a narrow gap length, and to ensure stable insulation between the electrode film and the upper shield film. To provide a magnetoresistive thin film magnetic head having a read head and a method of manufacturing the same.

[0012]

In order to achieve the above object, a magnetoresistive thin film magnetic head according to the present invention is provided with magnetic domain control provided on both sides of a magnetoresistive element section 425 as shown in FIGS. 4a and 4b. The film 418 and the electrode film 419 are vertically sandwiched between the upper and lower shield films 413 and 423 via the gap insulating films 414 and 422, respectively.
The magnetic sensing portion is insulated by an upper gap insulating film 422 in a structure called an abutted junction in which electrodes are connected to both side surfaces of the insulating film 5, and at least one or two or more layers of the pressure-resistant protective film 420 and the upper gap insulating film except for the magnetic sensing portion. The film 422 is insulated from the upper shield film 423, and the withstand voltage protection film 420 is provided on both sides of the magnetoresistive element portion 425.
8, formed with a stencil-shaped resist mask used in the step of connecting the electrode film 419, and as shown in FIG. 4b, the end c of the magneto-sensitive portion and the ends d and d 'of the withstand voltage protection film are substantially It is characterized by being self-aligned to match. The end of the withstand voltage protection film is the magnetic domain control film 41.
The position outside the magneto-sensitive portion from position 8 is indicated by a solid line, and its end is indicated by d. Similarly, a state in which the end of the breakdown voltage protective film is located inside the magnetic sensing portion from the magnetic domain control film 418 is indicated by a broken line, and the end is indicated by d '.

The self-alignment in the present invention is
The height and width of the “shadow” and “stalk” of one stencil-shaped resist mask are used to determine the inclination processing size of the magnetoresistive element 425, the pattern size and the position of the magnetic domain control film 418, the electrode film 419, and the withstand voltage protection film 420. In the present invention, unless otherwise specified, the electrode film 41 is determined.
9 is to determine the dimensions and the positional relationship of the breakdown voltage protective film 420 to be added on the substrate 9.

In the magnetoresistive thin-film magnetic head of the present invention, the end d of the self-aligned withstand voltage protection film 420 and the end c of the magnetically sensitive portion are within the range of the thickness value t of the upper gap insulating film. It is characterized by being aligned in. FIG.
In the case of b, the interval between c and d and the interval between c and d 'are both t.
It has the following structure.

In the present invention, the withstand voltage protection film 420 is composed of one or more layers,
2 and the electrode film 419, characterized in that the distance between the upper shield film 423 and the electrode film is increased to increase the insulating property.

In FIG. 4b, which illustrates details of the invention,
It is desirable that the thickness g of the pressure-resistant protective film at the portion in contact with the magnetic sensing portion is smaller than the thickness h (shown in FIG. 4A) on the electrode outside the magnetoresistive element portion.

In the magnetoresistive thin-film magnetic head of the present invention, the thickness h of the pressure-resistant protective film at a portion away from the magnetic sensing portion (shown in FIG. Is larger than the thickness t of the upper gap insulating film, and the ratio thereof is as follows: breakdown voltage protective film / upper gap insulating film ≧ 1.3.
It is desirable that

It is desirable that the thickness j of the pressure-resistant protective film at the portion of the magnetoresistive element portion riding on the corner a is at least 20% of the thickness h of the voltage-resistant protective film at a portion away from the magnetically sensitive portion. .

The withstand voltage protection film 420 is formed of the upper gap insulating film 4.
It is preferable to use a non-magnetic insulating material selected from alumina or beryllium oxide, boron nitride, and aluminum titanate, which is frequently used for 23, and having an electric resistance of 10 ¹⁰ (Ω-cm) or more.

The withstand voltage protection film 420 and the upper gap insulating film 422 are formed of a magnetic sensing part and an electrode film 419 and an upper shield film 4.
23, the material is too far from the coefficient of thermal expansion of these metals, for example, if alumina is used for the upper gap insulating film 422, use a material such as quartz whose coefficient of thermal expansion is one digit smaller than that of alumina. Then, cracks occur due to the thermal history during the manufacturing process and the like, and magnetic characteristics of the magnetic sensing portion and the like are deteriorated by stress. Therefore, the thermal expansion coefficient of the material used for the breakdown voltage protective film 420 and the upper gap insulating film 422 is 30 × 10 ⁻⁷ / deg. It is desirable that this is the case.

When different materials are used for the breakdown voltage protective film 420 and the upper gap insulating film 422, the difference in the coefficient of thermal expansion is 70 × 10 ⁻⁷ / deg. The following is more desirable from the viewpoint of crack generation.

Similarly, when two or more types of materials are used for the breakdown voltage protective layer 420, the difference between the respective thermal expansion coefficients is 70 × 1.
^0-7 / deg. The following is desirable from the viewpoint of crack generation.

In particular, beryllium oxide has substantially the same coefficient of thermal expansion and electrical resistance as alumina, but has a thermal conductivity nearly 10 times greater than that of alumina, so that the effect of efficiently dissipating heat generated in the magnetically sensitive portion can be obtained. It is a more desirable material because it can be expected.

The method of manufacturing a magneto-resistance effect type magnetic head according to the present invention is characterized as a method of aligning an end of a withstand voltage protective film with an end of a magnetically sensitive portion. Specifically, the method employs the same stencil-shaped resist mask, inclines the magnetoresistive element 425, forms the magnetic domain control film 418, and forms the electrode film 4
19, and the formation of the breakdown voltage protection film 420, the stencil-shaped resist mask is removed.
It is characterized in that the withstand voltage protection film 420 is self-aligned so that the end d or d 'of 0 and the end c of the magneto-sensitive portion are aligned within the range of the thickness value t of the upper gap insulating film 422.

Further, various methods of the present invention include forming a lower shield film 413, a lower gap insulating film 414, a SAL film 415, a spacer film 416, a magnetoresistive film 417, forming a stencil-shaped resist mask, a magnetoresistive element, Of the part 425, formation of the magnetic domain control film 418, and the electrode film 4
19, the resist mask in the stencil shape is removed, and the formation of the upper gap insulating film 422 and the formation of the upper shield film 423 are prevented from being displaced. Electrode film 4
19 is characterized in that the withstand voltage protection film 420 can be reliably added also to the portion on which the magnetoresistance change film 417 runs.

[0026]

In the magnetoresistive thin film magnetic head, it is desirable to reduce the distance between the magnetically sensitive portion and the upper shield film from the viewpoint of improving the linear recording density.
It is preferable that the thicknesses of 4, 422 are thin. On the other hand, narrowing the interval is not preferable from the viewpoint of insulating properties. In particular, electric field concentration is particularly likely to occur at the bent portion b of the electrode film 419 added to the end a of the inclined portion of the magnetoresistive element portion 425, so that dielectric breakdown is likely to occur. is there. In a structure called an abutted junction in which electrodes are connected to both side surfaces of the magnetoresistive change film, the magnetosensitive portion of the magnetoresistive effect element is insulated by an upper gap insulating film, and at least one or two or more layers other than the magnetosensitive portion are provided. The insulating layer is insulated from the upper shield film by the withstand voltage protective film and the upper gap insulating film, and the end portion of the withstand voltage protective film and the magneto-sensitive portion are formed with a stencil-shaped resist mask used in the step of connecting the electrodes. By self-aligning the ends so that they substantially coincide with each other, it is possible to ensure insulation.

If a more desirable head structure of the present invention is applied, a withstand voltage protection film 420 is formed at the bent portion b of the electrode film 419.
And the end d or d 'of the withstand voltage protection film 420 and the end c of the magneto-sensitive portion are within the numerical range of the thickness t of the upper gap insulating film. Since they match, it is possible to provide a magnetoresistive thin-film magnetic head having excellent insulating properties and high linear recording density without increasing the distance between the magnetically sensitive portion and the upper shield film.

More specifically, the thickness h of the withstand voltage protection film defined by the thickness on the electrode deviated from the magnetoresistive element portion 425
Is set to be at least 1.3 times the thickness t of the upper gap insulating film, and the thickness j at the bent portion of the electrode film is set to 20% or more of the withstand voltage protection film thickness h. The insulation between the shield films 423 and the reliability of the head can be improved. If a head in which the thickness j of the breakdown voltage protection film on the bent portion of the electrode film is less than 20% of the breakdown voltage protection film h is manufactured, there is a problem that the insulating property is reduced. Since the addition of the withstand voltage protection film is performed with the stencil-shaped resist mask attached, the shade of the shade portion of the stencil-shaped resist mask is shaded. The thickness h of the withstand voltage protection film is set to be 1.3 times or more the thickness t of the upper gap insulating film in order to secure the thickness of the withstand voltage protection film in the bent portion where the electric field concentration is likely to occur since the thickness becomes small as j. Thus, a withstand voltage protection film having a thickness of at least about 25% of the thickness t of the upper gap insulating film can be secured.

As the pressure-resistant protective film, a film of an oxide of aluminum, beryllium, a nitride of boron, and aluminum titanate can be formed by sputtering under the condition that a specific resistance of 10 ¹⁰ (Ω-cm) or more can be obtained. By using a material, it is possible to realize a head having a high linear recording density in which insulation properties are secured and the distance between the magnetically sensitive portion and the upper shield is reduced.

In the magnetoresistive thin film magnetic head according to the present invention, the magnetic sensing portion, the electrode film 419 and the upper shield film 4
The thermal expansion coefficient of the alloy film No. 23 is about 110 to 150 × 10
⁻⁷ / deg. Therefore, the thermal expansion coefficient of the breakdown voltage protection film 420 and the upper gap insulating film 422 is 30 × 10 ⁻⁷ /
deg. Above, the difference in thermal expansion coefficient of the alloy film of the pressure-resistant protective film 420 and the upper gap insulating film 422 in contact with the alloy film 70x10 ^{- 7} / deg. By doing so, the stress of the alloy film, the withstand voltage protection film 420 and the upper gap insulating film 422 is reduced, the adhesion of the film is improved, and a head without film peeling can be realized.

When the withstand voltage protection film 420 has two or more layers, the difference in thermal expansion coefficient between the upper withstand voltage protection film, the lower withstand voltage protection film, and the upper gap insulating film is 70 × 10 ⁻⁷ / de.
g. By setting the following, the stress between the layers is reduced, the adhesion of the film is improved, and a head without film peeling can be realized.

Alumina is often used for the upper gap insulating film 422. The thermal expansion coefficient of the pressure-resistant protective film is about 6x
10 ⁻⁷ / deg. In the case of using quartz, the difference in thermal expansion from the alloy film is about 104 to 144 × 10 ⁻⁷ / deg. The difference in thermal expansion from the alumina film is about 74 × 10 ⁻⁷ / deg. Becomes In the process of forming quartz on the electrode film by sputtering, the temperature rises during the sputtering operation, so that there is a problem that the quartz film is easily peeled off when the sputtering is completed and the temperature returns to room temperature.

After using the same stencil-shaped resist mask of the present invention to perform the inclination processing of the magnetoresistive element portion 425, the formation of the magnetic domain control film 418, the formation of the electrode film 419, and the formation of the withstand voltage protection film 420, the stencil is formed. If the manufacturing method of removing the resist mask of the shape is applied, the height and width of the "shade" and "stalk" of one stencil-shaped resist mask, the inclination processing dimensions of the magnetoresistive effect element portion, the magnetic domain control film and the electrode Since the pattern dimensions of the film and the withstand voltage protection film can be determined at one time, it is possible to improve the dimensional accuracy. In particular, the self-alignment effect can be utilized to minimize the pattern displacement.

When the tilting of the magnetoresistive element 425, the formation of the magnetic domain control film 418, and the formation of the electrode film 419 are completed, the stencil-shaped resist mask is removed, and a resist mask is formed again to form a withstand voltage protection film. As compared with the method disclosed in the conventional Japanese Patent Application Laid-Open No. 7-192225 for manufacturing the resist mask 420, the step of manufacturing a resist mask for forming a pressure-resistant protective film, specifically, the manufacturing of the resist mask 240 in FIG. Manufacturing man-hours can also be reduced.

[0035]

Embodiments of the present invention will be described below in detail with reference to the drawings.

FIG. 4 shows a structure of a reproducing head portion of a magnetoresistive thin film magnetic head according to a first application example of the present invention as viewed from a sliding surface. The magnetoresistive element portion 425 applies a bias magnetic field to the magnetoresistive change film 417 whose electric resistance changes due to magnetism, a spacer film 416 for magnetically separating the magnetoresistive change film 417 and the SAL film 415, and the magnetoresistive change film 417. It is composed of three layers of the SAL film 415 and has a substantially trapezoidal shape. Both ends are adjacent to the magnetic domain control film 418 and the electrode film 419. A self-aligned withstand voltage insulating film 420 is added on the electrode film 419.
Further, an upper gap insulating film 422 and an upper shield film 423 are formed so as to cover the magnetic sensing portion and the withstand voltage insulating film 420.

FIG. 5 shows the structure of the reproducing head of the giant magnetoresistive head according to the second application of the present invention, as viewed from the sliding surface. A spin valve film is used for the magnetoresistive element portion 525. The spin valve film is made of a ferromagnetic film called a free layer 535 which can freely rotate the direction of magnetization in a direction along the direction of the recording magnetic field which is recorded on the magnetic recording medium and leaks to the outside. A ferromagnetic film called a fixed layer 537 in which the direction of magnetization is forcibly fixed, and a spacer film 536 made of a nonmagnetic metal film disposed between the free layer and the fixed layer.
And an antiferromagnetic film 538 for fixing the magnetization direction of the fixed layer
Mainly composed of four layers. Both ends are magnetic domain control films 5
18 and the electrode film 519. A self-aligned breakdown voltage insulating film 520 is added on the electrode film 519. Further, an upper gap insulating film 522 and an upper shield film 523 are formed so as to cover the magnetic sensing portion and the withstand voltage protection film 520.

【Example】

Referring to FIG. 6, a method of manufacturing the reproducing head according to the present invention will be described. In the description, a magneto-resistance effect type head in which the magneto-resistance effect element portion 625 is formed of three layers is used, but the giant magneto-resistance effect type head has the same configuration except for the film configuration of FIG. 6A).

In FIG. 6A, an insulating layer 612 made of alumina or the like is formed on a substrate 611 made of a nonmagnetic ceramic such as alumina titanium carbide. A magnetic material to be the lower shield film 613 was formed on the insulating layer 612 by plating or sputtering, and an insulating layer of alumina or the like to be the lower gap insulating film 614 was formed to a thickness of about 0.2 μm. Next, the SAL film 615 serving as the magnetoresistive element 625 and the spacer film 61
6. The magnetoresistive change film 617 is sputtered to about 2
A film was formed to a thickness of 0 nm. In FIG. 6B), a stencil-shaped resist mask 640 is formed by photolithography. As the shape of the stencil, the width of the shade is w ₁ 1.5
μm, shade thickness d ₁ 0.85 μm, stem width w ₂ 1.2 μm
m and stem height d _{2 were} 0.1 μm. Then is performed the milling with argon ion in Figure 6c), the height d ₁ and projecting a height dimension d2, shade part of the stem portion of the stencil _{(w 1 -w 2) / 2} , and argon ions in the milling By determining the incident angle of the beam, a substantially trapezoidal inclination angle is determined. Since milling is performed while rotating the substrate,
The vicinity of the periphery of the stencil undergoes a milling process at a milling angle, but for a certain time during the rotation of the substrate, the stencil shade portion blocks the argon ion beam. Therefore, the periphery of the stencil is not completely shadowed by the stencil but is a penumbra area. As a result, the frequency of incidence of argon ions in the peripheral portion of the stencil is lower than in other portions, so that the milling rate is reduced.
As a result, a substantially trapezoidal magnetoresistance effect element portion 625 can be produced. The upper edge _{k 1} of substantially trapezoidal is 1.3μm
In base _{k 2} are the inclination angle θ of 1.42μm was 45 ° shape. The milling is completed when the SAL film 615 in the area other than the magnetoresistive element section 625 has been completely removed. The height d1 of the shade of the resist mask 640 in this case stencil shape becomes _'resist mask 640 of stencil shapes became' height of the milled bulk d ₁ because it is exposed to an argon ion beam. FIG. 6D shows a process of forming the magnetic domain control film 618, the electrode film 619, and the withstand voltage protection film 620 in the magnetoresistive element portion 625 using a stencil-shaped resist mask 640 '. While rotating the substrate, the magnetic domain control film 618 is set to 0.
1 μm, 0.5 μm for electrode film 619, withstand voltage protection film 620
Were sequentially sputtered so as to have a thickness of 0.2 μm. Since the sputtering is performed while rotating the substrate, a film is also formed on the inner side of the shade, and since the size of the film is about 0.05 μm, a 1.2 μm magnetic sensing part is formed. In FIG. 6e), the stencil-shaped resist pattern 640 'is dissolved and removed with an organic solvent such as acetone and the stencil-shaped resist mask 6
The magnetic domain control film 618 ', the electrode film 619', and the withstand voltage protection film 620 'deposited on the upper portion of the shade 40' are removed. FIG.
In (f), an upper gap insulating film 622 having a thickness of 0.15 μm is sputtered over the entire surface, so that the magnetically sensitive portion is formed on the upper gap insulating film 6.
At 22, the portion other than the magnetic sensing portion has a two-layered shape of the breakdown voltage insulating film 620 and the upper gap insulating film 622.

As described above, since the magnetic domain control film, the electrode film, and the withstand voltage protection film are successively sputtered using the same stencil-shaped resist mask, the positions of the films are self-aligned. In addition to being formed without raising, the withstand voltage protection film can be completely formed even at the bent portion of the electrode film. In this embodiment, alumina is used for the breakdown voltage protection film and the upper gap insulating film.

As an embodiment of the second withstand voltage protection film, FIG. 7 shows a structure in which the withstand voltage protection film 720 has two layers. The manufacturing process is the same as that of the first embodiment up to FIG. 6C). The lower withstand voltage protective film 721 in contact with the electrode film 719 is made of beryllium oxide having good thermal conductivity, and the upper withstand voltage protective film 72 is
Alumina was formed in a thickness of 0.1 μm on each 1 ′.
The upper gap insulating film 722 was made of alumina having a thickness of 0.15 μm.

In order to clarify the effect on the short-circuit of the reproducing head of the present invention in which the breakdown voltage protective film is provided by the self-alignment method, for example, a method disclosed in JP-A-7-192225 having no self-alignment function is used. Was compared with the one to which. The thickness of the upper gap insulating film is three types of 0.2, 0.15, and 0.13 μm, the withstand voltage protection film is one layer, and the thickness is 1.3 times the upper gap insulating film thickness.
The width of the magnetically sensitive portion was set to 1.2 μm. Alumina was used for the breakdown voltage protective film and the upper gap insulating film. In order to check the short-circuit resistance, a DC voltage of 15 V was applied to the electrode and the upper shield, and then the presence or absence of a short circuit between the electrode film and the upper shield film was measured at a voltage of 2 V. The defective element was divided by the number of test elements, and the defective rate was calculated in percentage. Table 1 shows the results.

[Table 1]

The comparison between Example 1 and Comparative Example 1 shows that 12.1
It can be seen that the percent defective is improved. Similarly, when Example 3 is compared with Comparative Example 3, a difference of about 45% is found. Therefore, the magnetoresistive thin-film magnetic head of the present invention has a thickness of about 2
It can be seen that even with the reduction to / 3, the device can be manufactured with a rejection rate much lower than that of Comparative Example 1.

[0044]

According to the MR head of the present invention, the distance between the lower shield film and the upper shield film arranged so as to sandwich the magnetic sensing portion from above and below can be reduced, and a high linear recording density can be achieved. The insulation between the electrode film and the upper shield film can be improved. In particular, by forming a self-aligned withstand voltage protection film, the insulation between the electrode film and the upper shield film is ensured, and the short-circuit between the upper shield film and the electrode film is greatly reduced compared to the conventional method. Using a stencil-shaped resist mask, a rectangular resist mask for providing a withstand voltage protection film is formed by performing tilt processing of the magnetoresistive element portion, forming a magnetic domain control film, forming an electrode film, and forming a withstand voltage protection film. 2 240) can be omitted.

[Brief description of the drawings]

FIG. 1 is a structural diagram of a magnetoresistive thin-film magnetic head.

FIG. 2 is a diagram showing a conventional method of adding a withstand voltage protection film.

FIG. 3 is a diagram illustrating a problem when a withstand voltage protection film is added by a conventional method.

4A is a structural diagram of a magnetoresistive thin film magnetic head of the present invention. FIG. 4B is an enlarged structural diagram of a magnetoresistive thin film magnetic head of the present invention.

FIG. 5 shows a second example of the magnetoresistive thin film magnetic head of the present invention.
Structural diagram illustrating an embodiment of

FIG. 6 is a diagram illustrating a method of manufacturing a magnetoresistive thin-film magnetic head according to the present invention.

FIG. 7 shows a third example of the magnetoresistive thin film magnetic head according to the present invention;
Structural diagram illustrating an embodiment of

[Explanation of symbols]

101 slider outflow end, 102 slider inflow end, 103 reproduction head, 104 inductive head, 11
1,611 ceramic substrate, 112,412,51
2,612 insulating film, 113,413,513,613
Lower shield film, 114, 414, 514, 614 Lower gap insulating film, 115, 415, 615 SAL film,
116, 416, 616 Spacer film, 117, 41
7,617 Magnetoresistance change film, 118,418,51
8,618,618 'domain control film, 119,219,
319, 419, 519, 619, 619 'electrode film,
122, 322, 422, 522, 622, 722 Upper gap insulating film, 123, 423, 523, 723 Upper shield film, 125, 425, 525 Magnetoresistance element portion, 220, 320, 420, 520, 620, 62
0 ', 720, 721, 721' withstand voltage protection film, 24
0, 340, 640, 640 'resist mask, 53
5 free layer, 536 spacer film, 537 fixed layer,
538 Antiferromagnetic film

 ──────────────────────────────────────────────────の Continued on the front page (72) Inventor Toshihiro Ifuku 18 Matsuyama-cho, Moka-shi, Tochigi Hitachi Metals Co., Ltd. F-term in the parts division (reference) 5D034 BA04 BA09 BA15 BA17 BB08 CA06 DA07

Claims (5)

[Claims] In a magnetoresistive thin film magnetic head, a magnetoresistive element and electrodes disposed on both sides of the magnetoresistive element are vertically sandwiched between upper and lower shields via a gap insulating film. The magneto-sensitive portion of the magnetoresistive element is insulated by an upper gap insulating film, and the other than the magneto-sensitive portion is provided with at least one or two or more layers of a withstand voltage protective film. The upper gap insulating film is insulated from the upper shield film, and the end of the pressure-resistant protective film and the end of the sensing portion, which are formed in a state where a stencil-shaped resist mask is used in the step of connecting the electrodes, are substantially formed. A magnetoresistive thin-film magnetic head characterized by being self-aligned to match. 2. The magnetoresistive device according to claim 1, wherein the end of the self-aligned withstand voltage protective film and the end of the magneto-sensitive portion are aligned within the thickness range of the upper gap insulating film. Effect type thin film magnetic head. 3. The magnetoresistive effect according to claim 1, wherein a thickness of the withstand voltage protection film is smaller at a portion in contact with the magneto-sensitive portion than on a portion of the electrode which is separated from the magnetoresistive effect element portion. Type thin film magnetic head. 4. After sloping the magnetoresistive element, forming a magnetic domain control film, forming an electrode film, and forming a withstand voltage protection film using the same stencil-shaped resist mask, the stencil-shaped resist mask is used. The thin film magnetic head of the magnetoresistive effect type, characterized in that the withstand voltage protective film is removed and self-aligned with the withstand voltage protective film so that the end of the withstand voltage protective film and the end of the magneto-sensitive portion are aligned within the numerical value range of the thickness of the upper gap insulating film. Production method. 5. A lower shield film, a lower gap insulating film, a magnetoresistive element film, a stencil-shaped resist mask, a tilting of a magnetoresistive element, a magnetic domain control film, an electrode film, and a breakdown voltage. A method of manufacturing a magnetoresistive thin film magnetic head, comprising: forming a protective film, removing a stencil-shaped resist mask, forming an upper gap insulating film, and forming an upper shield film.