JP2000215841A - Composite emission electron microscope for chemical analysis - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a composite emission electron microscope for chemical analysis capable of measuring the fine sample surface by making excitation of inner-shell electrons possible and mapping with information on a chemical state such as kinds or valences of atoms. SOLUTION: In a composite emission electron microscope for chemical analysis, an exciting high energy electron beam source of an inner-shell electron and an X-ray source are built in a low-energy electron microscope device to use as an Auger electron emission microscope or a photo-electron microscope, and analysis of electronic states and the chemical states of surface atoms is made possible. By combining the LEEM(low energy electron microscope) with an other light source, analysis of chemical states and chemical mapping are made possible by utilizing information on inner-shell electrons which is not utilized in the conventional method.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a compound emission electron microscope for chemical analysis using X-rays, electron beams and ultraviolet rays.

[0002]

2. Description of the Related Art Advances in ultra-high vacuum technology since 1970 have made it easier to prepare clean surfaces of single crystals of metals, semiconductors, oxides, etc., and have advanced surface analysis techniques centering on electron spectroscopy and electron beam diffraction. Together with the family name is clear (wel
l-defined) structure and rearrangement on the solid surface,
Various phenomena such as the electronic state and the adsorption state were revealed.
Such a single crystal surface with a well-defined name is considered to be a model for elucidating the relationship between its structure and the chemical reaction or catalytic action of the surface.For example, differences in crystal plane orientation, differences in activity due to steps and kinks, modification New facts, such as changes in surface activity, have been revealed. On the other hand, it was also revealed that the structure of the solid surface was dynamically changing under the reaction conditions (in the presence of gaseous gas and at high temperature), and real-time analysis under in-situ conditions was performed. It is considered important.

[0003] Surface phenomena such as chemical reaction and phase transition adsorption diffusion on the single crystal surface do not occur spatially uniformly. Therefore, by performing surface imaging in “real time”, such surface phenomena can be grasped intuitively.

A scanning tunneling microscope (Scanning microscope)
Tunneling Microscopy: ST
M), atomic force microscope (Atomic Force M)
scanning probe microsco such as microscopy (AFM)
py: SPM) and transmission electron microscopy (Transmission)
ion Electron Microscopy: T
EM) can directly capture micro phenomena at the atomic / molecular level.

On the other hand, the physical properties of the single crystal surface are often expressed in a so-called mesoscopic region of several nm to several μm in which some atoms and molecules are gathered. As a real-time imaging method for such a mesoscopic region, a photoemission electron microscope (Photoemission Electron) is used.
ron Microscopy (PEEM).

[0006] This PEEM is a technique for real-time imaging of a surface by utilizing the fact that photoelectrons fly out in proportion to the work function of the surface. Using this, a moving image of a diffusion reaction concentration pattern generated on the Pt (110) surface during the CO oxidation reaction has been successfully measured.

In the surface chemical process, various elements coexist, and the state of the elements changes. Therefore, a measurement method capable of mapping an element or its electronic state is desired. Techniques for mapping by elemental analysis include analytical electron microscopy and SAM (Scanning A).
Auger Microscopy) and 10 nm
Elemental analysis can be performed with a resolution of less than In addition, Imaging XPS has been actively used in recent years as a technique sensitive to the surface.

[0008] On the other hand, Harada et al.
Energy Electron Microscope
y: LEEM) is equipped with a metastable atom source as a new light source, and is equipped with an energy analyzer.
Tron Emission Microscopy:
MEEM).

The above-mentioned low-speed electron microscope (LEEM)
This device can obtain information on the surface structure and electronic state by applying the technique of low-speed electron diffraction. The chemical state of the surface is observed by incorporating a metastable atom source into this apparatus and observing a surface image and observing a Penning ionization spectrum using electrons generated in a penning ionization process with surface atoms. However, in this metastable electron emission microscope (MEEM), the spectral energy is at most about 40 to 50 eV, and analysis and surface mapping are performed based on information on the valence state of surface atoms.

[0010]

On the other hand, in order to perform mapping based on information about the chemical state such as the type and valence of an atom, it is necessary to excite inner-shell electrons having a binding energy of 100 eV or more. Conventional LEE
In both M and MEEM, the energy of the light source is low acceleration (40 ~
(About 50 eV), there is a problem that it cannot be used for exciting core electrons.

The present invention eliminates the above-mentioned problems, enables excitation of inner-shell electrons, and maps information based on the chemical state such as the kind and valence of an atom to form a mesoscopic-sized minute region on the sample surface. It is an object of the present invention to provide a compound emission electron microscope for chemical analysis capable of performing measurement.

[0012]

In order to achieve the above object, the present invention provides: (1) a low-speed electron microscope having a high-speed electron beam source for exciting core electrons and an X-ray source having an energy analyzer; An Auger electron emission microscope or X-ray is used as a light emission electron microscope incorporated in the apparatus, and enables analysis of the electronic state and chemical state of surface atoms.

[2] In the compound emission electron microscope for chemical analysis according to the above [1], in the Auger electron emission microscope, an electron beam is perpendicularly incident on a sample and emits electrons at a detection angle of about ± 8 degrees. This is to detect.

[3] In the compound emission electron microscope for chemical analysis described in [1] above, the incident electrons and the outgoing electrons are incident with their optical axes coincident with each other, and the optical axes of the outgoing electrons are arranged on a straight line. It was done.

[4] In the compound emission electron microscope for chemical analysis according to the above [1], the light emission electron microscope receives X-rays and analyzes the kinetic energy of the emitted electrons.

[5] In the compound emission electron microscope for chemical analysis according to the above [1], a secondary electron emission microscope utilizing the secondary electrons generated from the surface by the irradiation of electrons or X-rays may be operated. It was done.

[0017]

Embodiments of the present invention will be described below in detail.

An X-ray photoemission electron microscope (X-ra) capable of attaching a monochromatic X-ray source to a LEEM device having an energy analyzer and capturing an energy-selected image of a photoelectron peak.
yPhotoemission Electron M
microscopy (XPEEM) apparatus was developed.

This apparatus uses a mirror electron microscope (Mirror Electron M) for observing a structure-sensitive LEEM or specular reflection by selecting a light source using the same optical system.
secondary emission electron microscope (Secon) for irradiating electrons of several keV and imaging secondary electrons.
dary Emission Electron Mi
croscopy (SEEM), an Auger emission electron microscope (Auger) for imaging Auger electrons including elemental information.
Emission Electron Micros
copy: AEEM), PEEM and XPEEM
Has the feature that it can be installed at the same time.

Further, by introducing an aperture into the microscope section, a gas can be introduced into the sample section up to about 10 ⁻² Pa, and the pressure in the microscope section does not deteriorate. This enabled in-situ observation under catalytic reaction conditions.

First, a first embodiment of the present invention will be described.

FIG. 1 is a block diagram of a composite emission electron microscope apparatus for chemical analysis according to the present invention.

In FIG. 1, 1 is a sample, 10 is an X-ray source, 11 is a monochromator, 12 is an X-ray, 20 is an electron gun (electron beam source), 21 and 33 are stigmers [an astigmatism correction lens (STG )], 22A and 22B are converging lenses, 23 and 43 are slits, 24 is a quadrupole, and 26 is a beam separation electrode (BSE: Beam Separato).
r), 27 is an objective lens, 30 is a deuterium lamp, 25,
31, 35, 38 and 45 are deflectors (polarizers),
32 and 37 are intermediate lenses (IL1 and IL2), 34 is an angle limiting slit, 36 is a field limiting slit, 39 is a movable screen (SC1) (fluorescent plate), 40 is a mirror,
1, 49 is a camera, 42 is an energy analyzer (EA),
42A is a retardation lens [deceleration lens (R
L)], 42B Wien filter, 42C is an acceleration lens [acceleration lens (AL)], 44, 46, 4
7, a projection lens; and 48, a fluorescent screen (SC2).

As shown in FIG. 1, a high acceleration electron gun (about 2 kV or more) 20 or X
A radiation source (Al-X-ray: kα) 10 is incorporated in a LEEM (slow electron microscope) device, and an Auger emission electron microscope (A
The use of EEM) or light emission electron microscope (XPEEM) makes it possible to analyze the electronic and chemical states of surface atoms.

In particular, in AEEM, the electron beam
, And emitted electrons are detected at a detection angle of about ± 8 degrees, so that high-sensitivity measurement is possible. In addition, the beam separation electrode 26 is used to match the optical axes of the incident electrons and the emitted electrons, and the optical axes of the emitted electrons are arranged in a straight line. This is a so-called coaxial detection method. Observation is possible.

A secondary emission electron microscope (SEE) utilizes secondary electrons generated from the surface by electron or X-ray irradiation.
M) can also be used.

FIG. 2 is a view showing an electron beam, an X-ray irradiator, and a sample chamber of a compound emission electron microscope for chemical analysis according to an embodiment of the present invention.

The electron gun 20 includes an ion pump (I)
P2) Attaching 101 and slit 23, in-site
Measurement under u conditions is possible.

The X-ray source 10 moves the filament and X
Set a target for line generation.

Al was used as a target for X-ray generation. The maximum load that can be applied to X-rays is 12 kV x 5
0 mA (600 W). A curved spectral crystal mirror (M) 103 having a Rowland circle with a radius of 500 mm is placed at a distance of 500 mm from the light source point, and light is condensed and dispersed simultaneously. This time, SiO ₂ (1010) was used as the material of the mirror. Further, the sample 1 is placed at a distance of 485 mm from the mirror 103, irradiated with X-rays, and ejects photoelectrons. Between the mirror 103 and the sample:
By placing an aluminum thin film W of 0 μm and shutting off the sample chamber and the X-ray chamber in a vacuum, it is possible to introduce gas into the sample chamber and keep in-situ observation while keeping the X-ray chamber at a high vacuum. It is. Separating the position F of the filament and the X-ray generation target from the sample chamber prevents oxidation of the X-ray generation target and the filament, and enables long-time in-situ measurement. In addition, only the X-ray chamber is evacuated by an independent ion pump and a turbo molecular pump, so that an in-situ
u) enabled measurement.

Table 1 summarizes the methods that can be measured by the compound emission electron microscope apparatus for chemical analysis of the present invention and the features thereof.

[0032]

[Table 1]

That is, as shown in this table, the low-energy electron diffraction microscope (LEEM)
The mirror electron microscope (MEM) has a positional resolution of 1 μm for the mirror electron microscope (MEM), and the Auger emission electron microscope (AEEM) has the elemental and chemical state information of 0.
Secondary electron microscope (SEEM) with 1μm position resolution
Indicates that the information of the chemical state is at a position resolution of 0.1 μm, and the light emission electron microscope (PEEM)
X-ray emission electron microscope (XPEE) with a position resolution of μm
M) can measure information on elemental / chemical state with a position resolution of 0.1 μm.

As described above, the combination of the LEEM device and another light source makes it possible to analyze the chemical state and perform chemical mapping by using information of inner shell electrons which have not been used conventionally.

Hereinafter, each part of the compound emission electron microscope for chemical analysis will be described more specifically.

This compound emission electron microscope apparatus for chemical analysis comprises three parts.

(1) The first part is a light source.

The feature of this compound emission electron microscope for chemical analysis is that different observation means (LEEM, ME
M, AEEM, SEEM, PEEM, and XPEEM) to perform surface imaging and spectrum measurement on the order of sub-μm to μm.

This compound emission electron microscope for chemical analysis was equipped with an X-ray source 10, an electron gun 20, and a deuterium lamp 30 as light sources, as shown in FIG. In this apparatus, the kinetic energy of electrons incident on the sample 1 and electrons emitted from the sample 1 can be changed by adjusting the applied voltage applied to the sample 1.

As the X-ray source 10, XR3E2M manufactured by VG was used, and an Al-Kα ray having a maximum load of 600 W was used. The color is monochromated by the monochromator 11 having a Rowland radius of 500 mm, and the irradiation size of the X-rays 12 at the position of the sample 1 is 1 × 3 mm ² . The X-ray source 10 is isolated by the Al window, and can always be kept in a high vacuum by the ion pump. When an image is formed using a secondary electron having the strongest kinetic energy of about 0 eV among the electrons excited by the X-ray 12, when a high voltage of -10 kV is applied to the sample 1, the secondary electron becomes approximately +10 kV. Electrons having kinetic energy enter the objective lens (COL).

When the electron beam is used as the light source, the LaB ₆ filament electron gun 20 is used as the electron beam source, and
Apply 10 keV. From the electron gun 20 to the objective lens (COL) to which a voltage of 0 V is applied, the electrons take 10
It is accelerated to keV and heads for sample 1, but sample 1
Is applied with an applied voltage of -7.5 kV to -10.1 kV, and the electrons are decelerated. LEEM images formed by low-energy electron diffraction spots sensitive to the surface structure, MEM images due to specular reflected electrons sensitive to the electric field on the surface, and strong secondary electron emission according to the kinetic energy of each incident electron SEEM image and AE by Auger electron
It can be switched to an EM image.

Now, incident electrons are emitted from the upper electron gun 20.
The sample 1 was irradiated perpendicularly, and a Wien filter was used as the beam separation electrode 26 so that electrons emitted from the sample 1 also went straight to the optical axis. That is, as will be described later, the incident electrons are bent at the beam separation electrode 26 by utilizing the fact that the direction of the Lorentz force acting according to the traveling direction of the electrons is different, but the emitted electrons are directed straight by the beam separation electrode 26. Adjust the electric and magnetic fields. Bauer et al. Have an arrangement in which the incident electron beam and the outgoing electron beam are symmetric with respect to the sample. In this apparatus, however, the traveling direction of only the incident electrons is bent so that the outgoing electrons go straight. Therefore, it is easy to perform an operation for obtaining optical conditions such as axis alignment.

When the deuterium lamp 30 is used, the surface observation can be performed by the PEEM method utilizing the fact that the number I of emitted electrons differs depending on the work function φ of the surface. The number I of photoelectrons emitted by photoexcitation from the surface can be expressed by the following equation.

I = (hν−φ) ² (1) The deuterium lamp 30 gives a broad distribution spectrum having a peak at 6.5 eV, emits photoelectrons according to the work function, and differs in the work function. Can obtain an image of the surface. The kinetic energy of the electron is hν-φ
And is accelerated by an electric field of 8.5 to 10 kV applied between the sample 1 and the objective lens (COL) and enters the objective lens (COL).

(2) The second part is an electron lens system.

The objective lens (COL) is set to 1
A four-pole objective lens system with two electrodes was employed. Although it is necessary to apply a high pressure as compared with a three-pole objective lens, it has a feature that the resolution is increased. The aperture diameter of the objective lens (COL) is a pore having a diameter of 2 mm. The first electrode and the third electrode are grounded. A voltage for focusing on the second electrode is applied. A high voltage of −10 kV is applied to sample 1 to accelerate electrons in an electric field formed between the first electrodes,
Collect on electrodes.

The electrons passing through the objective lens (COL) pass through an astigmatism correction lens (STG) 33 and polarizers (DF, SAA, ANA) 31, 35, and 38 for adjusting the optical path, and intermediate lenses (IL1, IL2). By 32 and 37, an image is formed at the position of the movable screen (SC1) 39. An angle limiting slit (Angle) for removing aberration and improving spatial resolution is provided between the intermediate lens 32 and the first imaging position.
limiting aperture 34 and a selected area aperture for taking out photoelectrons from a specific domain.
e) There are 36.

The image observed at the position of the movable screen (SC1) 39 is a secondary electron image whose kinetic energy is close to 0 eV when it comes out of the sample 1 in PEEM or XPEEM. It becomes an electron image of diffraction. This is further converted to projection lenses (PL) 44, 46,
The image is magnified by 47, and the sensitivity is increased by MCP, and finally projected on a fluorescent screen (SC2) 48. The last magnification is
It is about 1000 times.

(3) On the other hand, when it is desired to obtain an image by photoelectrons or Auger electrons having a specific kinetic energy, the third
Using an energy analyzer (EA) 42 which is a part of
After selecting the energy of photoelectrons and the like, it is enlarged by a projection lens system and formed as an energy analysis image on a fluorescent screen [SC2 (MCP)] 48.

Energy analyzer (hereinafter abbreviated as EA) 4
2. In this apparatus, a Wien filter was used, in which the optical axis was not shifted, and high-sensitivity, high-resolution energy sorting was possible.
First, incident electrons are decelerated by the deceleration lens (RL) 42A. The decelerated electrons enter the Wien filter 42B. In the Wien filter 42B, an electric field E and a magnetic field B are applied perpendicular to the traveling direction of electrons. As a result, the electron receives a force of F = −e (E + v × B) (2). Thus, by selecting the E and B appropriately, the force electrons having a specific kinetic energy E _kin = mv ^2/2 subjected to 0, can be straight its electrons. However, if E _kin is different from this value, the electron trajectory is bent. The electrons passing through the Wien filter 42B are accelerated by an accelerating lens (AL) 42C,
Again, it has an energy of 10 keV. The energy selection slit of FIG. 1 (Energy selection)
The photoelectron spectrum can be measured by inserting the slit 43 and sweeping. Furthermore, by selecting specific energy by the slit 43 and forming an image by the lens effect of the Wien filter 42B, an energy-selected image of AEEM or XPEEM can be obtained. The energy resolution is determined by the deceleration rate and the width of the energy selection slit. These signals and images are amplified by the MCP and formed on the fluorescent screen (SC2) 48.

Results [1] AEEM On the other hand, when a voltage of -8 kV to -9 kV is applied to the sample, high-speed electrons of 1 to 2 keV enter the sample. In this case, Auger electrons, secondary electrons, and the like are emitted from the sample. An SEEM image is formed by using secondary electrons having a high intensity. An AEEM is one in which Auger electrons having element and chemical state information are selected by EA, and the difference in element type and the difference in chemical state are imaged. Auger electrons of Ag were selected in the Ag-deposited Cu mesh, and an AEEM image was detected.

FIG. 3 is a view showing the AEEM image.

FIG. 3A shows a dispersion image of electrons, which is energy-dispersed by EA. Here, a peak corresponding to the Auger electron emission of AgMNN near the kinetic energy of 350 eV was given. Next, an energy selection slit was inserted, energy corresponding to this peak was cut out, and the real space was imaged in FIG. 3B. A
The mesh portions at 30 μm intervals where g is present appear brighter. This is an image obtained from one frame (25 ms) of a video, and a real-time image is possible.

[2] XPEEM On the other hand, XPEEM can be measured by changing the light source to X-rays. When the sample surface is irradiated with X-rays, valence electrons, photoelectrons, Auger electrons, and the like near Fermi are excited, and secondary electrons appear at the lowest energy. Secondary electrons do not directly contain information on elements, but heavy elements tend to emit photoelectrons and thus have the strongest intensity and become brighter. Therefore, rough mapping can be performed based on the difference in atomic number.

FIG. 4 is a view showing the XPEEM image.

FIG. 4 (a) shows that Si (11)
1) An XPEEM image of a 30 × 30 μm ² square island of Au arranged in a lattice pattern on a substrate is shown. Au
It looks the brightest because a lot of X-ray photoelectrons are emitted from. This image can also be observed in real time.

On the other hand, FIG. 4B shows the energy dispersion of the X-ray photoelectron peak by EA and the energy dispersion image of Au. Each of Au4f _7/2 and 4f _5/2 appear to separate things of 84.0 and 87.7eV. When the half width of the spectrum of Au4f5 _{/ 2} was measured, it was 1.3 eV. The measurement was performed for 10 minutes using a high sensitivity cooled CCD camera.

As described above, this apparatus uses an electron beam, light, X
Using a line, the material distribution, structure distribution, and element distribution on the surface can be imaged at a speed close to real time. Further, by changing the voltage applied to the light source and the sample, the same surface can be observed by switching to various microscopic techniques of LEEM, MEM, AEEM, SEEM, PEEM and XPEEM. As a result, the same surface of the minute region can be analyzed from multiple sides.

AEEM for mapping Auger peaks
Is a conventional SEM (Scanning E)
Compared to a SAM incorporated in an electron microscope (electron microscopy), there is no need to scan an electron beam, so that real-time imaging is possible. Also,
If the substance distribution alone does not require element identification,
A very bright image can be obtained in a very short time only with SEEM.

Although this apparatus uses a general-purpose X-ray source as a light source, a considerable time reduction can be expected by using the synchrotron emission as the XPEEM source.

However, synchrotron emission requires a special huge facility called an electron storage ring.
There is a problem with using it in a laboratory. Therefore, use of a plasma X-ray source is considered in the future.

[0062] With the advance of such light sources, it is expected that the speed of measurement, the spatial resolution, and the energy resolution will advance, and that the surface science of the mesoscopic region will be advanced.

It should be noted that the present invention is not limited to the above-described embodiment, and various modifications are possible based on the spirit of the present invention, and these are not excluded from the scope of the present invention.

[0064]

According to the present invention, the following effects can be obtained.

(A) By improving the conventional emission electron microscope apparatus, surface chemical state mapping by inner-shell excited electron spectroscopy such as X-ray photoelectrons and Auger electrons can be performed with high sensitivity.

As described above, the combination of the LEEM device and another light source enables analysis of the chemical state and chemical mapping using information of the inner shell electrons which have not been used conventionally.

(B) In the AEEM, in particular, since the electron beam is perpendicularly incident on the sample and the emitted electrons are detected at a detection angle of about ± 8 degrees, a highly sensitive measurement is possible.

(C) In addition, since the optical axes of the incident electrons and the emitted electrons are made to coincide with each other and the optical axes of the emitted electrons are arranged in a straight line, a so-called coaxial detection method is used, so that there is little influence on the unevenness. Observation of the surface image is possible.

(D) Further, a secondary emission electron microscope (S) using secondary electrons generated from the surface by irradiation of electrons or X-rays.
Also available as EEM).

[Brief description of the drawings]

FIG. 1 is a configuration diagram of a compound emission electron microscope apparatus for chemical analysis of the present invention.

FIG. 2 is a view showing an electron beam, an X-ray irradiator, and a sample chamber of a compound emission electron microscope for chemical analysis according to an embodiment of the present invention.

FIG. 3 is a diagram showing an AEEM image of a compound emission electron microscope for chemical analysis showing an example of the present invention.

FIG. 4 is a diagram showing an XPEEM image of a compound emission electron microscope for chemical analysis showing an example of the present invention.

[Explanation of symbols]

Reference Signs List 1 sample 10 X-ray source 11 Monochromator 12 X-ray 20 Electron gun (electron beam source) 21, 33 Stigmer [Astigmatism correction lens (S
TG)] 22A, 22B Convergent lens 23, 43 Slit 24 Quadrupole 25, 31, 35, 38, 45 Deflector (Polarizer) 26 Beam separation electrode (BSE) 27 Objective lens 30 Deuterium lamp 32, 37 Intermediate lens ( IL1, IL2) 34 Angle limiting slit 36 View limiting slit 39 Fluorescent plate 40 Mirror 41, 49 Camera 42 Energy analyzer 42A Retardation lens [deceleration lens (R
L)] 42B Wien filter 42C Acceleration lens [Acceleration lens (A
L)] 44, 46, 47 Projection lens 48 MCP 101 Ion pump (IP2) 103 Curved spectral crystal mirror

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Yuji Sakai 3-1-2 Musashino, Akishima City, Tokyo Japan Electronics Co., Ltd. (72) Inventor Makoto Kato 3-1-2 Musashino, Akishima City, Tokyo Japan Electronics F term (for reference) 2G001 AA01 AA03 AA07 BA08 BA09 BA18 CA03 DA02 GA01 GA06 GA09 GA13 HA12 JA04 JA06 KA01 KA08 MA05 SA02 5C033 RR02 RR04 RR08 RR10 SS01 SS08 SS10

Claims (5)

[Claims] 1. A high-speed electron beam source for exciting core electrons,
Combined emission for chemical analysis characterized by incorporating the radiation source into the device of a low-speed electron microscope and using the Auger electron emission microscope and X-ray as a light emission electron microscope to enable analysis of the electronic state and chemical state of surface atoms. Electron microscope equipment. 2. The composite emission electron microscope for chemical analysis according to claim 1, wherein in the Auger electron emission microscope, an electron beam is perpendicularly incident on a sample, and the emitted electrons are approximately ±±.
A compound emission electron microscope for chemical analysis, wherein the detection is performed at a detection angle of 8 degrees. 3. The compound emission electron microscope for chemical analysis according to claim 1, wherein the incident electrons and the outgoing electrons are incident with their optical axes coincident with each other, and the optical axes of the outgoing electrons are arranged on a straight line. Emission electron microscope for chemical analysis. 4. The compound emission electron microscope for chemical analysis according to claim 1, wherein the light emission electron microscope receives X-rays and analyzes the kinetic energy of the emitted electrons. Electron microscope equipment. 5. The compound emission electron microscope for chemical analysis according to claim 1, wherein the secondary electron emission microscope is operated by utilizing secondary electrons generated from the surface by irradiation of electrons or X-rays. Emission electron microscope for chemical analysis.