JP2000211970A - Porcelain fired at lower temperature and electronic parts equipped therewith - Google Patents
Porcelain fired at lower temperature and electronic parts equipped therewithInfo
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- JP2000211970A JP2000211970A JP11014351A JP1435199A JP2000211970A JP 2000211970 A JP2000211970 A JP 2000211970A JP 11014351 A JP11014351 A JP 11014351A JP 1435199 A JP1435199 A JP 1435199A JP 2000211970 A JP2000211970 A JP 2000211970A
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- low
- component
- temperature
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- porcelain
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、誘電率が低く、品
質係数Ｑが大きい低温焼成磁器、およびこれを用いた電
子部品に関するものである。The present invention relates to a low-temperature fired porcelain having a low dielectric constant and a large quality factor Q, and an electronic component using the same.
【０００２】[0002]
【従来の技術】携帯電話機等の高周波回路無線機器にお
いては、高周波回路フィルターとして、例えばトップフ
ィルター、送信用段間フィルター、ローカルフィルタ
ー、受信用段間フィルター等として、積層型誘電体フィ
ルターが使用されている。こうした誘電体積層フィルタ
ーの例は、例えば特開平５−２４３８１０号公報に開示
されている。2. Description of the Related Art In a high-frequency circuit radio device such as a portable telephone, a laminated dielectric filter is used as a high-frequency circuit filter, for example, as a top filter, a transmission interstage filter, a local filter, a reception interstage filter, or the like. ing. An example of such a dielectric laminated filter is disclosed in, for example, JP-A-5-243810.
【０００３】誘電体積層フィルターを製造するために
は、誘電体を構成するセラミックス粉末の成形体を複数
作製し、各成形体に対して、所定の導体ペーストを塗布
することによって所定の電極パターンを各成形体に作製
する。次いで、各成形体を積層して積層体を得、この積
層体を焼成することによって、導体ペースト層と各成形
体とを同時に焼成し、緻密化させる。In order to manufacture a dielectric laminated filter, a plurality of compacts of ceramic powder constituting a dielectric are prepared, and a predetermined conductor pattern is applied to each compact to form a predetermined electrode pattern. It is produced for each molded body. Next, the compacts are laminated to obtain a laminate, and the laminate is fired, so that the conductive paste layer and the compacts are simultaneously fired and densified.
【０００４】この際、電極は一般的に銀系導体、銅系導
体、ニッケル系導体のような低融点金属の導体を使用し
ているが、これらの融点は例えば１１００℃以下であ
り、９３０℃程度まで低下する場合もある。このため、
電極を構成する低融点金属よりも低い焼成温度で誘電体
を焼結させることが必要である。[0004] At this time, the electrodes are generally made of a conductor of a low melting point metal such as a silver-based conductor, a copper-based conductor, and a nickel-based conductor, and their melting points are, for example, 1100 ° C or less, and 930 ° C. To some extent. For this reason,
It is necessary to sinter the dielectric at a firing temperature lower than the low melting point metal constituting the electrode.
【０００５】一方、低誘電率系多層配線基板の材料とし
て、アルミナやガラエポ基板が使用されている。On the other hand, an alumina or glass epoxy substrate is used as a material for a low dielectric constant multilayer wiring board.
【０００６】[0006]
【発明が解決しようとする課題】本発明者は、低誘電率
材料からなる多層配線基板中に、コンデンサーやインダ
クターを内蔵させることを試みている。しかし、アルミ
ナやガラエポ基板の共振周波数の温度係数τｆは、−６
０ｐｐｍ／℃を下回っているので、高精度の温度補償を
要求されるコンデンサーやインダクターには使用できな
かった。この一方、ＢａＯ−ＳｉＯ2 −Ａｌ2 Ｏ3 系の
低温焼成磁器において、１０００℃以下の最適焼成温度
を有しており、誘電率εｒが１０以下であり、品質係数
Ｑが２５００以上である磁器は提供されていない。ま
た、τｆは検討されてこなかった。The present inventor has attempted to incorporate a capacitor and an inductor in a multilayer wiring board made of a low dielectric constant material. However, the temperature coefficient τf of the resonance frequency of the alumina or glass epoxy substrate is −6.
Since it was below 0 ppm / ° C., it could not be used for capacitors and inductors requiring high-precision temperature compensation. The other hand, in low-temperature firing porcelain BaO-SiO 2 -Al 2 O 3 system has an optimum sintering temperature of 1000 ° C. or less, the dielectric constant εr is 10 or less, porcelain is quality factor Q is 2500 or more Is not provided. Further, τf has not been studied.
【０００７】例えば特公平７−９８６７９号公報におい
ては、低温焼成可能であって、最適焼成温度範囲が広
く、絶縁抵抗が高く、誘電率εｒが低い低温焼成磁器を
提供するために、アルミニウム成分をＡｌ2 Ｏ3 に換算
して２．０−１０．０重量％、バリウム成分をＢａＣＯ
3 に換算して２０．０−５０．０重量％、珪素成分をＳ
ｉＯ2 に換算して４０．０−７０．０重量％、ホウ素成
分をＢ2 Ｏ3に換算して１．０−３．０重量％、クロム
をＣｒ2 Ｏ3 に換算して０．３−３．０重量％、および
カルシウムをＣａＣＯ3 に換算して０．３−３．０重量
％含有する低温焼成磁器を提案している。しかし、低温
焼成磁器の品質係数Ｑを２５００以上に制御する方法は
認識されておらず、かつこれと共に９３０℃以下の最適
焼成温度で焼成可能な磁器は実現されていないし、低温
焼成磁器の共振周波数の温度係数τｆの絶対値を小さく
する方法は記載されていない。[0007] For example, Japanese Patent Publication No. 7-98679 discloses a low-temperature fired porcelain which can be fired at a low temperature, has a wide optimum firing temperature range, has a high insulation resistance, and has a low dielectric constant εr. 2.0-10.0% by weight in terms of Al 2 O 3 , and the barium component is BaCO
3 converted to 20.0-50.0% by weight, silicon component as S
40.0-70.0% by weight in terms of iO 2, in terms of 1.0-3.0 wt% in terms of boron component in B 2 O 3, the chromium Cr 2 O 3 0.3 A low-temperature fired porcelain containing -3.0% by weight and calcium in an amount of 0.3-3.0% by weight in terms of CaCO 3 is proposed. However, a method for controlling the quality factor Q of the low-temperature fired porcelain to 2500 or more has not been recognized, and a porcelain that can be fired at an optimum firing temperature of 930 ° C. or less has not been realized. No method is disclosed for reducing the absolute value of the temperature coefficient τf.
【０００８】本発明の課題は、ＢａＯ−ＳｉＯ2 −Ａｌ
2 Ｏ3 系の低温焼成磁器において、誘電率εｒが１０以
下であり、品質係数Ｑが２５００以上であり、かつ共振
周波数の温度係数τｆの絶対値が３０ｐｐｍ／℃以下で
ある、高強度の低温焼成磁器を提供することである。[0008] It is an object of the present invention, BaO-SiO 2 -Al
In a 2 O 3 -based low-temperature fired porcelain, a high-strength low-temperature porcelain having a dielectric constant εr of 10 or less, a quality factor Q of 2500 or more, and an absolute value of a resonance frequency temperature coefficient τf of 30 ppm / ° C. or less. It is to provide a fired porcelain.
【０００９】[0009]
【課題を解決するための手段】本発明に係る低温焼成磁
器は、バリウム成分をＢａＯに換算して４０−６５重量
％、珪素成分をＳｉＯ2 に換算して２５−４６重量％、
アルミニウム成分をＡｌ2 Ｏ3 に換算して０．１−２０
重量％、ホウ素成分をＢ2 Ｏ3 に換算して０．３−１．
５重量％、クロム成分を酸化クロムに換算して０．５−
３．５重量％、および亜鉛成分をＺｎＯに換算して０．
５−２０重量％含有しており、誘電率εｒが１０以下で
あり、品質係数Ｑが２５００以上であり、共振周波数の
温度係数τｆの絶対値が３０ｐｐｍ／℃以下であること
を特徴とする。The low-temperature fired porcelain according to the present invention has a barium component of 40 to 65% by weight in terms of BaO, a silicon component of 25 to 46% by weight in terms of SiO 2 ,
The aluminum component in terms of Al 2 O 3 0.1-20
% By weight, and the boron component was converted to B 2 O 3 .
5% by weight, chromium component is converted to chromium oxide and 0.5-
3.5% by weight and a zinc component of 0.1% in terms of ZnO.
5-20% by weight, a dielectric constant εr of 10 or less, a quality factor Q of 2500 or more, and an absolute value of a temperature coefficient τf of a resonance frequency of 30 ppm / ° C. or less.
【００１０】珪素成分をＳｉＯ2 に換算して２５重量％
以上含有させることによって、誘電率εｒを１０以下に
制御できる。これを４６重量％以下とすることによっ
て、磁器の低温焼成が可能となる。25% by weight of silicon component converted to SiO 2
With the above content, the dielectric constant εr can be controlled to 10 or less. By setting this to 46% by weight or less, low-temperature firing of porcelain becomes possible.
【００１１】アルミニウム成分をＡｌ2 Ｏ3 に換算して
０．１重量％以上（特に好ましくは２重量％以上）とす
ることによって、磁器中に強度の高いセルシアン相を増
やし、磁器からなる基板の強度を２０００ｋｇ／ｃｍ2
以上とできた。これを２０重量％以下（特に好ましくは
１５重量％以下）とすることによって、低温焼成を可能
とした。By converting the aluminum component to 0.1% by weight or more (particularly preferably 2% by weight or more) in terms of Al 2 O 3 , a high strength celsian phase is increased in the porcelain and the substrate of the porcelain is reduced. 2000 kg / cm 2 strength
That's it. By setting this to 20% by weight or less (particularly preferably 15% by weight or less), low-temperature firing was made possible.
【００１２】ホウ素成分をＢ2 Ｏ3 に換算して１．５重
量％以下（特に好ましくは１．０重量％以下）とするこ
とによって、磁器の品質係数Ｑを２５００以上とするこ
とができた。このように、ＢａＯ−ＳｉＯ2 −Ａｌ2 Ｏ
3 系の低温焼成磁器において、ホウ素成分の含有量を少
なくすることで、磁器の品質係数Ｑを増大させ得ること
は知られていない。ホウ素成分をＢ2 Ｏ3 に換算して
０．３重量％以上（特に好ましくは０．５重量％以上）
とすることによって、磁器の低温焼成が可能となる。By converting the boron component to 1.5% by weight or less (particularly preferably 1.0% by weight or less) in terms of B 2 O 3 , the quality factor Q of the porcelain could be increased to 2500 or more. . Thus, BaO—SiO 2 —Al 2 O
It is not known that the quality factor Q of the porcelain can be increased by reducing the content of the boron component in the low temperature porcelain of the 3 series. 0.3% by weight or more (more preferably 0.5% by weight or more) of the boron component in terms of B 2 O 3
By doing so, low-temperature firing of the porcelain becomes possible.
【００１３】クロム成分を酸化クロムに換算して０．５
重量％（特に好ましくは１．０重量％）以上含有させる
ことによって、共振周波数の温度係数τｆの絶対値を３
０ｐｐｍ／℃以下に制御でき、かつ低温焼成磁器の適正
焼成温度を低下させることができる。これを３．５重量
％（特に好ましくは２．５重量％）以下とすることによ
って、τｆの絶対値を３０ｐｐｍ／℃以下に制御でき
る。The chromium component is converted to chromium oxide to 0.5
% By weight (particularly preferably 1.0% by weight), the absolute value of the temperature coefficient τf of the resonance frequency becomes 3%.
It can be controlled to 0 ppm / ° C. or less, and the appropriate firing temperature of the low-temperature firing porcelain can be lowered. By setting this to 3.5% by weight (particularly preferably 2.5% by weight) or less, the absolute value of τf can be controlled to 30 ppm / ° C. or less.
【００１４】亜鉛成分をＺｎＯに換算して０．５重量％
以上含有させることによって、低温焼成磁器の熱膨張係
数が減少し、焼結し易くなることから、低温焼成が可能
となる。これを２０重量％以下とすることによって、品
質係数Ｑの減少を防止できる。0.5% by weight of zinc component in terms of ZnO
By containing the above, the coefficient of thermal expansion of the low-temperature fired porcelain decreases, and sintering becomes easy, so that low-temperature firing becomes possible. By setting this to 20% by weight or less, a decrease in the quality factor Q can be prevented.
【００１５】このように、本発明においては、ホウ素成
分とクロム成分と亜鉛成分とをそれぞれ添加し、かつ各
成分の添加量を適切に組み合わせることによって、誘電
率εｒの低い低温焼成磁器において、低温での焼結性を
保持しつつ、磁器の品質係数Ｑを２５００以上に高く保
持し、共振周波数の温度係数τｆの絶対値を３０ｐｐｍ
／℃以下まで減少させることに成功した。As described above, in the present invention, by adding a boron component, a chromium component, and a zinc component, respectively, and by appropriately adding the amounts of the components, a low-temperature fired porcelain having a low dielectric constant εr can be used. While maintaining the sintering property in the above, the quality factor Q of the porcelain is kept high at 2500 or more, and the absolute value of the temperature coefficient τf of the resonance frequency is 30 ppm.
/ ° C.
【００１６】更に、本発明の低温焼成磁器は、主として
亜鉛成分の添加によって、磁器の熱膨張係数が減少し、
かつ５００℃−８００℃の温度範囲における焼成収縮率
が、より誘電率εｒの高い低温焼成磁器と近くなってい
る。この結果、本発明の低温焼成磁器からなる低誘電率
層のグリーンシートと、誘電率εｒが１０−１５０の低
温焼成磁器からなる他の誘電体層のグリーンシートとを
積層して積層体を得、この積層体を焼成して接合体を得
たときに、焼成後の基板の反りや接合界面の剥離が見ら
れない。Further, in the low-temperature fired porcelain of the present invention, the coefficient of thermal expansion of the porcelain is reduced mainly by adding a zinc component.
Further, the firing shrinkage in the temperature range of 500 ° C. to 800 ° C. is close to that of the low-temperature firing porcelain having a higher dielectric constant εr. As a result, a green sheet of a low dielectric constant layer made of the low-temperature fired porcelain of the present invention and a green sheet of another dielectric layer made of the low-temperature fired porcelain having a dielectric constant εr of 10 to 150 are stacked to obtain a laminate. When the laminate is fired to obtain a bonded body, no warpage of the fired substrate and no peeling of the bonded interface are observed.
【００１７】他の誘電体層を構成する低温焼成磁器は、
以下のものが特に好ましい。 ＢａＯ−ＴｉＯ2 −ＺｎＯ−ＳｉＯ2 −Ｂ2 Ｏ3 ＢａＯ−ＴｉＯ2 −Ｂｉ2 Ｏ3 −Ｎｄ2 Ｏ3 −ＺｎＯ−
ＳｉＯ2 −Ｂ2 Ｏ3 ＢａＯ−ＴｉＯ2 −Ｂｉ2 Ｏ3 −Ｌａ2 Ｏ3 −Ｓｍ2 Ｏ
3 −ＺｎＯ−ＳｉＯ2 −Ｂ2 Ｏ3 ＭｇＯ−ＣａＯ−ＴｉＯ2 −ＺｎＯ−Ａｌ2 Ｏ3 −Ｓｉ
Ｏ2 −Ｂ2 Ｏ3 The low-temperature fired porcelain constituting another dielectric layer is as follows:
The following are particularly preferred. BaO-TiO 2 -ZnO-SiO 2 -B 2 O 3 BaO-TiO 2 -Bi 2 O 3 -Nd 2 O 3 -ZnO-
SiO 2 —B 2 O 3 BaO—TiO 2 —Bi 2 O 3 —La 2 O 3 —Sm 2 O
3 -ZnO-SiO 2 -B 2 O 3 MgO-CaO-TiO 2 -ZnO-Al 2 O 3 -Si
O 2 -B 2 O 3
【００１８】本発明の対象となる電子部品は特に限定さ
れないが、例えば積層誘電体フィルターの他、多層配線
基板、誘電体アンテナ、誘電体カップラー、誘電体複合
モジュール等がある。The electronic components to which the present invention is applied are not particularly limited, but include, for example, a multilayer wiring board, a dielectric antenna, a dielectric coupler, a dielectric composite module, and the like, in addition to a laminated dielectric filter.
【００１９】本発明の低温焼成磁器を製造する際には、
好ましくは、各金属成分の原料を所定比率で混合して混
合粉末を得、混合粉末を１０００−１２００℃で仮焼
し、仮焼体を粉砕し、セラミック粉末を得る。そして、
好ましくは、セラミック粉末と、ＳｉＯ2 、Ｂ2 Ｏ3 お
よびＺｎＯからなるガラス粉末をとを使用して、グリー
ンシートを作製し、グリーンシートを８５０−９３０℃
で焼成する。各金属成分の原料としては、各金属の酸化
物、硝酸塩、炭酸塩、硫酸塩などを使用できる。In producing the low-temperature fired porcelain of the present invention,
Preferably, the raw materials of the respective metal components are mixed at a predetermined ratio to obtain a mixed powder, the mixed powder is calcined at 1000 to 1200 ° C., and the calcined body is pulverized to obtain a ceramic powder. And
Preferably, a green sheet is produced using ceramic powder and a glass powder composed of SiO 2 , B 2 O 3 and ZnO, and the green sheet is heated to 850-930 ° C.
Baking. As a raw material of each metal component, an oxide, a nitrate, a carbonate, a sulfate, or the like of each metal can be used.
【００２０】[0020]
【実施例】酸化亜鉛、アルミナ、炭酸バリウム、酸化珪
素、酸化クロムをそれぞれ秤量し、湿式混合することに
よって、混合粉末を得、混合粉末を１０００−１２００
℃で仮焼し、仮焼体を粉砕し、セラミック粉末を得た。EXAMPLE Zinc oxide, alumina, barium carbonate, silicon oxide, and chromium oxide were each weighed and wet-mixed to obtain a mixed powder.
The resultant was calcined at a temperature of ℃, and the calcined body was pulverized to obtain a ceramic powder.
【００２１】一方、酸化亜鉛、酸化ホウ素および酸化珪
素の各粉末を秤量し、乾式混合し、混合粉末を白金ルツ
ボ中で溶融させ、溶融物を水中に投下して急速冷却し、
塊状のガラスを得た。このガラスを湿式粉砕し、低融点
ガラス粉末を得た。On the other hand, each powder of zinc oxide, boron oxide and silicon oxide is weighed and dry-mixed, the mixed powder is melted in a platinum crucible, and the melt is dropped into water and rapidly cooled.
A lump glass was obtained. This glass was wet-pulverized to obtain a low-melting glass powder.
【００２２】得られたセラミック粉末とガラス粉末と
を、有機バインダー、可塑剤、分散剤および有機溶剤と
共に、アルミナポット、アルミナボールを使用して混合
し、スラリーを得た。このスラリーを用いて、ドクター
ブレード装置によって、厚さ０．０３−２ｍｍのグリー
ンシートを成形した。The obtained ceramic powder and glass powder were mixed with an organic binder, a plasticizer, a dispersant and an organic solvent using an alumina pot and alumina balls to obtain a slurry. Using this slurry, a green sheet having a thickness of 0.03 to 2 mm was formed by a doctor blade device.
【００２３】表１、表２に示す実験番号１−２５の各組
成について、適正焼成温度、誘電率εｒ、品質係数Ｑ、
強度および共振周波数の温度係数τｆを測定した。各グ
リーンシートにコンデンサー電極や共振器パターンをス
クリーン印刷し、所定枚数のグリーンシートを積層し、
焼成し、加工して試験試料を得、各試験試料について誘
電率εｒ、品質係数Ｑおよび共振周波数の温度係数τｆ
を測定した。適正焼成温度は、焼成温度の変化に対する
誘電率εｒの変化が０．１／℃以内となる温度とした。
また、各試験試料について、ＪＩＳ Ｒ１６０１に従っ
て強度を測定した。これらの測定結果を表１、表２に示
す。For each composition of Experiment Nos. 1-25 shown in Tables 1 and 2, appropriate firing temperature, dielectric constant εr, quality factor Q,
The temperature coefficient τf of the intensity and the resonance frequency was measured. Screen printing of capacitor electrodes and resonator patterns on each green sheet, laminating a predetermined number of green sheets,
It is fired and processed to obtain test samples, and for each test sample, dielectric constant εr, quality factor Q, and temperature coefficient τf of resonance frequency
Was measured. The appropriate firing temperature was a temperature at which the change in the dielectric constant εr with respect to the change in the firing temperature was within 0.1 / ° C.
The strength of each test sample was measured according to JIS R1601. Tables 1 and 2 show the measurement results.
【００２４】[0024]
【表１】 [Table 1]
【００２５】[0025]
【表２】 [Table 2]
【００２６】実験番号１−４においては、主として酸化
亜鉛の量を変更したが、適正焼成温度が低く、Ｑも高
い。実験番号５−８においては、主として酸化アルミニ
ウムの量を変更した。実験番号９−１２においては、主
として酸化バリウムの量を変更した。実験番号１３−１
７において、主として酸化クロムの量を変更したが、実
験番号１３、１７ではτｆの絶対値が大きい。実験番号
２１−２４においては、主として酸化珪素の量を変更し
たが、これを減らすと誘電率εｒが上昇する傾向があ
る。実験番号２４−３０においては、主として酸化ホウ
素の量を変更したが、この量を減らすのにしたがって、
適正焼成温度が上昇するのと共に、品質係数Ｑが著しく
上昇する。In Experiment Nos. 1-4, the amount of zinc oxide was mainly changed, but the appropriate firing temperature was low and Q was high. In Experiment Nos. 5-8, the amount of aluminum oxide was mainly changed. In Experiment Nos. 9-12, the amount of barium oxide was mainly changed. Experiment number 13-1
7, the amount of chromium oxide was mainly changed, but in Experiment Nos. 13 and 17, the absolute value of τf was large. In Experiment Nos. 21-24, the amount of silicon oxide was mainly changed, but when this amount was reduced, the dielectric constant εr tends to increase. In Experiment Nos. 24-30, the amount of boron oxide was mainly changed, but as this amount was reduced,
As the appropriate firing temperature increases, the quality factor Q significantly increases.
【００２７】次いで、前記の各試験試料について、２５
−８００℃における熱膨張係数（／℃）を測定した。Next, for each of the above test samples, 25
The coefficient of thermal expansion (/ ° C) at -800 ° C was measured.
【００２８】また、ＺｎＯ１０重量％、Ａｌ2 Ｏ3 ２．
０重量％、ＢａＯ５０重量％、Ｃｒ2 Ｏ3 ０．３重量
％、ＳｉＯ2 ３７重量％、Ｂ2 Ｏ3 ０．７重量％の組成
を有する、接合用の他の低温焼成磁器のグリーンシート
を作製した。このグリーンシートを所定枚数積層し、９
２０℃で焼成し、焼成体を加工して試験試料を得、この
試験試料について２５−８００℃における熱膨張係数
（／℃）を測定した。そして、本発明の各試験番号の低
温焼成磁器の熱膨張係数と、接合用の他の低温焼成磁器
の熱膨張係数との差を算出した。Also, ZnO 10% by weight, Al 2 O 3
Another low-temperature fired porcelain green sheet for bonding having a composition of 0% by weight, 50% by weight of BaO, 0.3% by weight of Cr 2 O 3 , 37% by weight of SiO 2 and 0.7% by weight of B 2 O 3 Produced. A predetermined number of the green sheets are laminated, and 9
The sample was fired at 20 ° C., and the fired body was processed to obtain a test sample, and the test sample was measured for a coefficient of thermal expansion (/ ° C.) at 25 to 800 ° C. Then, the difference between the thermal expansion coefficient of the low-temperature fired porcelain of each test number of the present invention and the thermal expansion coefficient of another low-temperature fired porcelain for joining was calculated.
【００２９】また、実験番号１−３０の各グリーンシー
トと、接合用の低温焼成磁器のグリーンシートとについ
て、それぞれ、室温−８００℃の間の焼成収縮率を熱膨
張計で測定し、焼成収縮率の差の最大値を測定した。ま
た、実験番号１−３０の各グリーンシートと、接合用の
低温焼成磁器のグリーンシートとを積層し、８５０−９
３０℃で焼成することによって、各積層焼結体を得、各
積層焼結体について、反りと、各層の界面におるけクラ
ックや剥離の有無を検出した。これらの結果を表３、表
４に示す。For each of the green sheets of Experiment No. 1-30 and the green sheet of the low-temperature fired porcelain for bonding, the firing shrinkage rate between room temperature and 800 ° C. was measured with a thermal dilatometer, and the firing shrinkage was measured. The maximum value of the rate difference was measured. Further, each green sheet of Experiment No. 1-30 and a green sheet of a low-temperature fired porcelain for bonding were laminated, and 850-9
By firing at 30 ° C., each laminated sintered body was obtained, and for each laminated sintered body, the warpage and the presence or absence of cracks or peeling at the interface of each layer were detected. Tables 3 and 4 show these results.
【００３０】[0030]
【表３】 [Table 3]
【００３１】[0031]
【表４】 [Table 4]
【００３２】このように、本発明の範囲内の低温焼成磁
器を使用すると、積層焼結体を製造する際に、反り、剥
離、クラックが生じない。As described above, when a low-temperature fired porcelain within the scope of the present invention is used, warpage, peeling, and cracking do not occur when manufacturing a laminated sintered body.
【００３３】[0033]
【発明の効果】以上述べたように、本発明によれば、Ｂ
ａＯ−ＳｉＯ2 −Ａｌ2Ｏ3 系の低温焼成磁器におい
て、誘電率εｒが１０以下であり、品質係数Ｑが２５０
０以上であり、かつ共振周波数の温度係数τｆの絶対値
が３０ｐｐｍ／℃以下の、高強度の低温焼成磁器を提供
できる。As described above, according to the present invention, B
In low-temperature fired porcelain aO-SiO 2 -Al 2 O 3 system, the dielectric constant εr is 10 or less, the quality factor Q 250
A high-strength low-temperature fired porcelain having a temperature coefficient τf of 0 or more and an absolute value of a temperature coefficient τf of 30 ppm / ° C. or less can be provided.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｇ 4/12 ３５８ Ｈ０１Ｇ 4/30 ３０１Ｅ 4/30 ３０１ Ｃ０４Ｂ 35/16 Ｚ (72)発明者 馬場 英行 愛知県名古屋市瑞穂区須田町２番56号 日 本碍子株式会社内 Ｆターム(参考） 4G030 AA10 AA22 AA32 AA35 AA36 AA37 BA09 CA03 GA27 5E001 AB03 AD04 AE00 AE02 AE04 AH05 AH09 AJ02 5E082 AB03 BB01 BB05 BC33 EE04 EE35 FF15 FG06 FG25 FG26 FG27 FG54 LL02 PP01 PP03 PP10 5G303 AA05 AB05 AB15 BA11 CA03 CB01 CB02 CB03 CB30 CB38──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01G 4/12 358 H01G 4/30 301E 4/30 301 C04B 35/16 Z (72) Inventor Hideyuki Baba No. 56, Suda-cho, Mizuho-ku, Nagoya-shi, Aichi F-term (reference) in Nihon Insulators Co., Ltd. FG06 FG25 FG26 FG27 FG54 LL02 PP01 PP03 PP10 5G303 AA05 AB05 AB15 BA11 CA03 CB01 CB02 CB03 CB30 CB38
Claims (4)
５重量％、 珪素成分をＳｉＯ2 に換算して２５−４６重量％、 アルミニウム成分をＡｌ2 Ｏ3 に換算して０．１−２０
重量％、 ホウ素成分をＢ2 Ｏ3 に換算して０．３−１．５重量
％、 クロム成分を酸化クロムに換算して０．５−３．５重量
％、および亜鉛成分をＺｎＯに換算して０．５−２０重
量％含有しており、 誘電率εｒが１０以下であり、品質係数Ｑが２５００以
上であり、共振周波数の温度係数τｆの絶対値が３０ｐ
ｐｍ／℃以下であることを特徴とする、低温焼成磁器。1. The barium component is converted to BaO by 40-6.
5 wt%, in terms 25-46 wt% in terms of the silicon component to the SiO 2, the aluminum component in the Al 2 O 3 0.1-20
Wt%, 0.3-1.5 wt% in terms of boron component in B 2 O 3, 0.5-3.5 wt% in terms of chromium component chromium oxide, and converting the zinc component of ZnO The dielectric constant εr is 10 or less, the quality factor Q is 2500 or more, and the absolute value of the temperature coefficient τf of the resonance frequency is 30 p
low-temperature fired porcelain characterized by being at most pm / ° C.
Ｏ2 、Ｂ2 Ｏ3 およびＺｎＯからなるガラスが使用され
ていることを特徴とする、請求項１記載の低温焼成磁
器。2. A low-temperature fired porcelain starting material comprising Si
O 2, B 2 O 3 and wherein the glass of ZnO is used, low-temperature firing porcelain of claim 1, wherein.
低温焼成磁器からなることを特徴とする、電子部品。3. An electronic component comprising at least a part of the low-temperature fired porcelain according to claim 1.
なる低誘電率層と、この低誘電率層と接合されている他
の誘電体層とを備えており、他の誘電体層が、誘電率ε
ｒが１０−１５０の低温焼成磁器からなることを特徴と
する、請求項３記載の電子部品。4. A low dielectric constant layer comprising the low-temperature fired porcelain according to claim 1 and another dielectric layer joined to the low dielectric constant layer, wherein the other dielectric layer is , Dielectric constant ε
4. The electronic component according to claim 3, wherein r is a low-temperature fired porcelain of 10-150.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP01435199A JP3917770B2 (en) | 1999-01-22 | 1999-01-22 | Low-temperature fired porcelain and electronic component equipped with the same |
| US09/487,131 US6379805B1 (en) | 1999-01-22 | 2000-01-19 | Low temperature-fired porcelain articles and electronic parts including such porcelain articles |
| EP00300463A EP1022264B1 (en) | 1999-01-22 | 2000-01-21 | Low temperature-fired porcelain articles and electronic parts including such porcelain articles |
| DE60000546T DE60000546T2 (en) | 1999-01-22 | 2000-01-21 | Ceramic bodies fired at low temperature and electronic components containing them |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP01435199A JP3917770B2 (en) | 1999-01-22 | 1999-01-22 | Low-temperature fired porcelain and electronic component equipped with the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000211970A true JP2000211970A (en) | 2000-08-02 |
| JP3917770B2 JP3917770B2 (en) | 2007-05-23 |
Family
ID=11858660
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP01435199A Expired - Fee Related JP3917770B2 (en) | 1999-01-22 | 1999-01-22 | Low-temperature fired porcelain and electronic component equipped with the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3917770B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6764746B2 (en) * | 2001-03-09 | 2004-07-20 | Ngk Insulators, Ltd. | Low temperature-fired porcelain articles and electronic parts |
| US6893728B2 (en) | 2001-06-27 | 2005-05-17 | Ngk Insulators, Ltd. | Low temperature-fired porcelain and electronic parts |
| JP2007250728A (en) * | 2006-03-15 | 2007-09-27 | Matsushita Electric Ind Co Ltd | Ceramic laminated device and its fabrication process |
-
1999
- 1999-01-22 JP JP01435199A patent/JP3917770B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6764746B2 (en) * | 2001-03-09 | 2004-07-20 | Ngk Insulators, Ltd. | Low temperature-fired porcelain articles and electronic parts |
| US6893728B2 (en) | 2001-06-27 | 2005-05-17 | Ngk Insulators, Ltd. | Low temperature-fired porcelain and electronic parts |
| JP2007250728A (en) * | 2006-03-15 | 2007-09-27 | Matsushita Electric Ind Co Ltd | Ceramic laminated device and its fabrication process |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3917770B2 (en) | 2007-05-23 |
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