JP2000208747A - Solid photo-electron device - Google Patents
Solid photo-electron deviceInfo
- Publication number
- JP2000208747A JP2000208747A JP11004767A JP476799A JP2000208747A JP 2000208747 A JP2000208747 A JP 2000208747A JP 11004767 A JP11004767 A JP 11004767A JP 476799 A JP476799 A JP 476799A JP 2000208747 A JP2000208747 A JP 2000208747A
- Authority
- JP
- Japan
- Prior art keywords
- conversion region
- photo
- light
- photoelectric conversion
- solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、固体光電子装置、
特に入射光を電荷に変換する光電変換領域を有する固体
光電子装置に関する。The present invention relates to a solid-state optoelectronic device,
In particular, the present invention relates to a solid-state optoelectronic device having a photoelectric conversion region that converts incident light into electric charges.
【０００２】[0002]
【従来の技術】光（電磁波）を検出するセンサーとし
て、イメージセンサー、ラインセンサー、フォトダイオ
ード等がある。図３はそのようなセンサーの一例である
ＣＣＤ型固体撮像素子の従来例を示す断面図である。１
は半導体基板、２は光電変換領域、３は垂直転送レジス
タ、４は読み出しゲート部、５はゲート絶縁膜、６はポ
リシリコンからなる垂直転送電極、７は層間絶縁膜、８
は例えばアルミニウムからなる遮光膜、９は平坦化絶縁
膜、１０はカラーフィルタ、１１はオンチップマイクロ
レンズである。2. Description of the Related Art As sensors for detecting light (electromagnetic waves), there are an image sensor, a line sensor, a photodiode and the like. FIG. 3 is a cross-sectional view showing a conventional example of a CCD solid-state imaging device which is an example of such a sensor. 1
Is a semiconductor substrate, 2 is a photoelectric conversion region, 3 is a vertical transfer register, 4 is a read gate portion, 5 is a gate insulating film, 6 is a vertical transfer electrode made of polysilicon, 7 is an interlayer insulating film, 8
Is a light-shielding film made of, for example, aluminum, 9 is a flattening insulating film, 10 is a color filter, and 11 is an on-chip microlens.
【０００３】従来の固体撮像素子は光を電子等の電荷に
変換する光電変換領域２が下面及び上面とも平坦で互い
に平行に形成されていた。In a conventional solid-state image pickup device, a photoelectric conversion region 2 for converting light into electric charges such as electrons is formed on both lower and upper surfaces to be flat and parallel to each other.
【０００４】[0004]
【発明が解決しようとする課題】ところで、上記各セン
サーは、図３に示すような固体撮像素子に限らず、一般
に、素子サイズの縮小化が求められているものが多い。
そして、素子サイズの縮小化に伴ってセンサーの出力エ
ネルギーが低下する。この出力エネルギーの低下はセン
サーの感度低減の要因になるので、看過できない問題と
なる。By the way, each of the above sensors is not limited to the solid-state image sensor as shown in FIG. 3, and many sensors are generally required to be reduced in element size.
The output energy of the sensor decreases as the element size decreases. This decrease in output energy causes a decrease in the sensitivity of the sensor, and is a problem that cannot be overlooked.
【０００５】尤も、真空を利用した光電子増倍管は光電
子を増倍するので、出力エネルギーを大きくすることが
できる。しかし、光電子増倍管は小型化に限界があり、
また、振動、衝撃に弱いという大きな欠陥がある。やは
り、固体によるセンサにおいて素子サイズの縮小化を出
力エネルギーの低下を伴うことなく実現できるようにす
ることが望まれている。However, since a photomultiplier tube utilizing a vacuum multiplies photoelectrons, the output energy can be increased. However, photomultiplier tubes have limitations in miniaturization,
In addition, there is a major defect that it is weak against vibration and impact. Again, it is desired to be able to reduce the element size of a solid-state sensor without lowering the output energy.
【０００６】本発明はこのような問題点を解決すべく為
されたものであり、サイズの割に大きな出力エネルギー
を得ることができる固体光電子装置を提供することを目
的とする。The present invention has been made to solve such a problem, and an object of the present invention is to provide a solid-state optoelectronic device capable of obtaining a large output energy for its size.
【０００７】[0007]
【課題を解決するための手段】請求項１の固体光電子装
置は、入射光を電荷に変換する光電変換領域を有する固
体光電子装置において、上記光電変換領域の上方部に下
側からの光に対して反射機能を持つ反射膜を形成し、上
記光電変換領域に入射した光（電磁波）が光電変換領域
・反射膜間にて反射を繰り返すように構成されてなる。According to a first aspect of the present invention, there is provided a solid-state optoelectronic device having a photoelectric conversion region for converting incident light into electric charges. To form a reflection film having a reflection function, and light (electromagnetic wave) incident on the photoelectric conversion region is repeatedly reflected between the photoelectric conversion region and the reflection film.
【０００８】従って、請求項１の固体光電子装置によれ
ば、光電変換領域内面で光が反射を繰り返し、反射の度
に２次電子を発生するので、反射の毎に電子が増倍を繰
り返す。従って、固体光電子装置が小さくても非常に出
力エネルギーを大きくすることができる。Therefore, according to the solid-state optoelectronic device of the first aspect, light is repeatedly reflected on the inner surface of the photoelectric conversion region, and secondary electrons are generated at each reflection, so that the electron is repeatedly multiplied for each reflection. Therefore, even if the solid-state optoelectronic device is small, the output energy can be greatly increased.
【０００９】[0009]
【発明の実施の形態】本発明は、基本的には、光電変換
領域の上方部に下側からの光に対して反射機能を持つ反
射膜を形成し、上記光電変換領域に入射した光（電磁
波）が光電変換領域・反射膜間にて反射を繰り返すよう
に構成されてなるが、より具体的には、例えば、光電変
換領域を例えばＶ字状に形成する等により互いに異なる
向きをもった複数の面で構成し、上記光電変換領域の上
方に上記複数の面で反射された光に対して反射性を有す
る反射膜を形成する態様が好適である。尚、半導体基板
側でアバランシェ現象を生ぜしめて電子の増倍発生を更
に増すようにしても良い。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention basically forms a reflection film having a function of reflecting light from below on a photoelectric conversion region above the photoelectric conversion region. (Electromagnetic wave) is configured to be repeatedly reflected between the photoelectric conversion region and the reflection film. More specifically, for example, the photoelectric conversion regions have different directions by, for example, forming a V-shape. It is preferable that a plurality of surfaces are provided, and a reflective film having a reflectivity for light reflected by the plurality of surfaces is formed above the photoelectric conversion region. Note that an avalanche phenomenon may be generated on the semiconductor substrate side to further increase the multiplication of electrons.
【００１０】[0010]
【実施例】以下、本発明を図示実施例に従って詳細に説
明する。図１（Ａ）〜（Ｃ）は本発明固体光電子装置の
一つの実施例の要部を示すもので、（Ａ）は断面図、
（Ｂ）は光電変換部を抽出して示す断面図、（Ｃ）は光
電変換部を抽出して上から視た[図１（Ｂ）のＺ−Ｚ´
線視]図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the illustrated embodiments. 1A to 1C show a main part of one embodiment of the solid-state optoelectronic device of the present invention, wherein FIG.
FIG. 1B is a cross-sectional view showing a photoelectric conversion unit extracted therefrom, and FIG. 1C is a sectional view showing a photoelectric conversion unit extracted from above and viewed from above [ZZ ′ in FIG.
FIG.
【００１１】本固体光電子装置の大きな特徴は、光電変
換領域２ａがＶ字状に形成されていることである。即
ち、シリコン基板１にＶ字状に光電変換領域２ａを形成
した後に透過及び反射膜７を形成し、しかる後、カラー
フィルタ１０及びオンチップマイクロレンズ１１を形成
してなる。A major feature of the present solid-state optoelectronic device is that the photoelectric conversion region 2a is formed in a V-shape. That is, the transmission / reflection film 7 is formed after the V-shaped photoelectric conversion region 2a is formed on the silicon substrate 1, and then the color filter 10 and the on-chip microlens 11 are formed.
【００１２】このような固体光電子装置によれば、オン
チップマイクロレンズ１１により光電変換領域２ａに向
けて集光されカラーフィルタ１０を通った外部からの光
は上記透過及び反射膜７を透過して光電変換領域２ａ入
射する。透過及び反射膜７を外部からの光が透過するの
は、該膜７への入射角が小さいからである。そして、光
電変換領域２ａに入った光は図１（Ｂ）に示すように一
部が電子・正孔対に変換するが残りは光（電磁波）の状
態のまま反射を繰り返す。その際、透過及び反射膜７は
反射機能を果たす。というのは、光電変換領域２ａの表
面が斜めに大きく傾いている関係上透過及び反射膜７へ
の入射角が大きくなるからである。According to such a solid-state optoelectronic device, light from the outside condensed by the on-chip microlens 11 toward the photoelectric conversion region 2a and passed through the color filter 10 is transmitted through the transmission and reflection film 7. The light enters the photoelectric conversion region 2a. Light from the outside is transmitted through the transmission / reflection film 7 because the angle of incidence on the film 7 is small. Then, as shown in FIG. 1B, a part of the light entering the photoelectric conversion region 2a is converted into an electron-hole pair, but the rest repeats reflection in a light (electromagnetic wave) state. At this time, the transmission and reflection film 7 performs a reflection function. This is because the angle of incidence on the transmission and reflection film 7 is increased because the surface of the photoelectric conversion region 2a is greatly inclined.
【００１３】そして、反射を繰り返しながら電気信号に
変換されるので光電子が増倍される。従って、固体光電
子装置のサイズが小さいにも拘わらず大きな出力を得る
ことが可能である。The light is converted into an electric signal while being repeatedly reflected, so that photoelectrons are multiplied. Therefore, it is possible to obtain a large output despite the small size of the solid-state optoelectronic device.
【００１４】尚、縦断面Ｖ字状の光電変換領域２ａを形
成することは、半導体基板の結晶方向によりエッチング
レートが異なるエッチング技術又は選択比活用のドライ
エッチング技術を駆使してＶ字溝を形成し、その後、不
純物の選択拡散或いは選択イオン打ち込みにより光電変
換領域２ａを形成するという方法で行うことができる。
該光電変換領域２ａの表面部分は鏡面であっても粗面で
あっても良い。そして、Ｖ字状の溝の部分は不純物選択
拡散或いはイオン打ち込み後に半導体成長膜で埋めれば
よい。The formation of the photoelectric conversion region 2a having a V-shaped vertical cross section is achieved by forming a V-shaped groove by making full use of an etching technique in which the etching rate varies depending on the crystal direction of the semiconductor substrate or a dry etching technique utilizing a selectivity. After that, the photoelectric conversion region 2a can be formed by selective diffusion of impurities or implantation of ions.
The surface portion of the photoelectric conversion region 2a may be a mirror surface or a rough surface. Then, the V-shaped groove portion may be filled with a semiconductor growth film after impurity selective diffusion or ion implantation.
【００１５】図２（Ａ）、（Ｂ）は光電変換領域２ａの
各別の変形例を上から視た図である。尚、光電変換領域
２ａの縦断面形状は上記実施例ではＶ字状であったが、
Ｕ字形でも良いし、半円形でも良い。このように、本発
明は種々の態様で実施することができる。FIGS. 2A and 2B are views of different modifications of the photoelectric conversion region 2a as viewed from above. Although the vertical cross-sectional shape of the photoelectric conversion region 2a was V-shaped in the above embodiment,
It may be U-shaped or semicircular. Thus, the present invention can be implemented in various modes.
【００１６】[0016]
【発明の効果】請求項１の固体光電子装置によれば、光
電変換領域と反射膜との間で光が電子増倍を伴う反射を
繰り返しながら電気信号に変換してゆくので、固体光電
子装置が小さくても出力エネルギーを大きくすることが
できる。従って、微弱な光を従来よりも良く検出するこ
とができる。According to the solid-state optoelectronic device of the first aspect, light is converted into an electric signal while repeating reflection accompanied by electron multiplication between the photoelectric conversion region and the reflection film. Even if it is small, the output energy can be increased. Therefore, weak light can be detected better than before.
【００１７】請求項２の固体光電子装置によれば、光電
変換領域を例えばＶ字状というように非平行な複数の面
を持つように構成したので、光電変換領域で上側に反射
された光の反射膜に対する入射角を大きくすることがで
きる。従って、反射膜で反射しやすくなる。依って、反
射膜に外部からの光電変換領域への光の透過は許容する
が、光電変換領域から反射された光は反射する機能を付
与することができ、請求項１の固体光電子装置をより容
易に実現できる。According to the solid-state optoelectronic device of the second aspect, the photoelectric conversion region is formed to have a plurality of non-parallel surfaces such as a V-shape. The angle of incidence on the reflection film can be increased. Therefore, the light is easily reflected by the reflection film. Accordingly, the reflection film can be allowed to transmit light from the outside to the photoelectric conversion region, but can be provided with a function of reflecting light reflected from the photoelectric conversion region. Can be easily realized.
【図１】（Ａ）〜（Ｃ）は本発明固体光電子装置の一つ
の実施例の要部を示すもので、（Ａ）は断面図、（Ｂ）
は光電変換部を抽出して示す断面図、（Ｃ）は光電変換
部を上から視た[図１（Ｂ）のＺ−Ｚ´線視]図である。FIGS. 1A to 1C show a main part of one embodiment of a solid-state optoelectronic device of the present invention, wherein FIG. 1A is a cross-sectional view and FIG.
FIG. 2 is a cross-sectional view showing the extracted photoelectric conversion unit, and FIG. 1C is a view of the photoelectric conversion unit viewed from above [viewed along the line ZZ ′ in FIG. 1B].
【図２】（Ａ）、（Ｂ）は光電変換部の各別の変形例を
示すところの光電変換部を上から視た[図１（Ｂ）のＺ
−Ｚ´線に相当するところから視た]図である。FIGS. 2 (A) and 2 (B) show a photoelectric conversion unit as another example of a photoelectric conversion unit viewed from above [Z in FIG. 1 (B)].
-Viewed from the position corresponding to the -Z 'line].
【図３】固体光電子装置の従来例を示す断面図である。FIG. 3 is a sectional view showing a conventional example of a solid-state optoelectronic device.
１・・・半導体基板、２ａ・・・光電変換領域、７・・
・反射膜（透過及び反射膜）1 ... semiconductor substrate, 2a ... photoelectric conversion region, 7 ...
・ Reflection film (transmission and reflection film)
Claims (2)
有する固体光電子装置において、 上記光電変換領域の上方部に下側からの光に対して反射
機能を持つ反射膜を形成してなり、 上記光電変換領域に入射した光（電磁波）が光電変換領
域・反射膜間にて反射を繰り返すように構成されてなる
ことを特徴とする固体光電子装置。1. A solid-state optoelectronic device having a photoelectric conversion region for converting incident light into electric charge, wherein a reflection film having a function of reflecting light from below is formed above the photoelectric conversion region, A solid-state optoelectronic device, wherein the light (electromagnetic wave) incident on the photoelectric conversion region is repeatedly reflected between the photoelectric conversion region and the reflection film.
一方を互いに異なる向きをもった複数の面で構成したこ
とを特徴とする請求項１記載の固体光電子装置。2. The solid-state optoelectronic device according to claim 1, wherein at least one of the upper surface and the lower surface of the photoelectric conversion region is constituted by a plurality of surfaces having different directions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11004767A JP2000208747A (en) | 1999-01-12 | 1999-01-12 | Solid photo-electron device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11004767A JP2000208747A (en) | 1999-01-12 | 1999-01-12 | Solid photo-electron device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000208747A true JP2000208747A (en) | 2000-07-28 |
Family
ID=11593024
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11004767A Pending JP2000208747A (en) | 1999-01-12 | 1999-01-12 | Solid photo-electron device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000208747A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008218670A (en) * | 2007-03-02 | 2008-09-18 | Toshiba Corp | Solid-state image pickup device |
-
1999
- 1999-01-12 JP JP11004767A patent/JP2000208747A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008218670A (en) * | 2007-03-02 | 2008-09-18 | Toshiba Corp | Solid-state image pickup device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US12015038B2 (en) | Solid state imaging element and electronic device | |
| KR102531355B1 (en) | image sensor | |
| JP4826111B2 (en) | Solid-state imaging device, manufacturing method of solid-state imaging device, and image photographing apparatus | |
| KR102306670B1 (en) | image sensor and manufacturing method thereof | |
| US7358103B2 (en) | Method of fabricating an imaging device for collecting photons | |
| KR102489325B1 (en) | solid state imaging device | |
| JP2007227643A (en) | Solid state imaging apparatus | |
| JP2008066732A (en) | Cmos image sensor, and method for manufacturing the same | |
| JP4711657B2 (en) | Solid-state imaging device | |
| CN109509763B (en) | Image sensor pixel unit structure for improving quantum efficiency and forming method | |
| TWI711173B (en) | Solid-state imaging device | |
| KR20110121531A (en) | Solid-state imaging element and imaging device | |
| KR102457355B1 (en) | Absorption enhancement structure to increase quantum efficiency of image sensor | |
| WO2008016017A1 (en) | Solid state imaging device and its fabrication method, electronic information apparatus, ionization sputtering system | |
| JP2000208747A (en) | Solid photo-electron device | |
| KR102486685B1 (en) | Enhanced design for image sensing technology | |
| WO2022024698A1 (en) | Imaging device | |
| JPH0653458A (en) | Solid state image sensor | |
| JPH02264473A (en) | Solid-state image sensing element | |
| JP4824241B2 (en) | Semiconductor energy detector | |
| JPS59182561A (en) | Semiconductor image sensor | |
| CN110112162B (en) | Image sensor and forming method thereof | |
| US20240194707A1 (en) | Enhanced area getter architecture for wafer-level vacuum packaged uncooled focal plane array | |
| JPH0590551A (en) | Solid-state image pick-up device | |
| KR20210053152A (en) | Lens structure configured to increase quantum efficiency of image sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20041101 |
|
| RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20050131 |