JP2000206410A - Projection optical system, projection exposure device and projection exposure method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To have a large numerical aperture, while providing complete chromatic aberration compensating ability by forming light from a 1st object into a primary image on a 2nd object through a group having prescribed power and a reflection mirror. SOLUTION: A reticle R (1st object) which functions as a projection original plate where a specified circuit pattern is formed is arranged on the object surface of a projection optical system PL, and a wafer W (2nd object) which functions as a substrate is arranged on the image surface of the optical system PL. The reticle R is held on a reticle stage RS, and the wafer W is held on a wafer stage WS. Illuminating light supplied from an illumination optical device IS arranged to illuminate uniformly the reticle R above the reticle R illuminates the reticle R and the image of a light source in the device IS is formed at the pupil position of the optical system PL, and the so-called 'Koehler illumination' is performed. The pattern image of the reticle R Koehler- illuminated by the optical system PL is exposed and transferred on the wafer W.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a projection exposure apparatus and a projection exposure apparatus for reducing and projecting a pattern on an object onto another object, and more particularly to a projection exposure apparatus and method. The present invention relates to a projection optical system suitable for projecting and exposing a formed pattern on a substrate as a second object.

[0002]

2. Description of the Related Art Conventionally, various optical systems have been proposed as projection optical systems as described above. For example, Japanese Patent Application Laid-Open No. 8-166
No. 540 proposes an optical system in which both the object side and the image side are substantially telecentric.

[0003]

In a projection optical system, particularly in a projection optical system for reducing and projecting a pattern formed on a mask onto a substrate, it is required to project a fine pattern with higher resolution. . That is, there is an increasing demand to further increase the degree of integration of manufactured devices, and there is a need for a high-resolution projection optical system capable of transferring a finer pattern. In order to satisfy this requirement, the illumination light source for illuminating the mask must have a shorter wavelength and a narrower wavelength band, and the projection optical system must have a larger numerical aperture to cope with the shorter wavelength of the illumination light source. Is essential.

In this case, if the numerical aperture is simply increased, higher-order chromatic aberration cannot be ignored, and it is necessary to further narrow the wavelength band. Further, it is expected that narrowing the wavelength band becomes difficult as the wavelength of the illumination light source becomes shorter.

Accordingly, an object of the present invention is to provide a projection exposure optical system, projection exposure apparatus and method having a large numerical aperture while having sufficient chromatic aberration correction capability.

[0006]

In order to solve the above-mentioned problems, a projection optical system according to a first aspect of the present invention reduces and projects an image of a first object onto a second object based on an image-side telecentric light beam. A first group having at least one lens element and having a predetermined power, the first group being arranged on an optical path of light passing through a first object, and
A second group comprising a semi-transparent element having a predetermined power disposed between the group and the second object; and a second group having a predetermined power disposed between the second group and the second object. A first reflecting mirror having a light transmitting portion in a predetermined area including a center; a third group having a positive power disposed between the second group and the second object; The optical surface of the anti-transmissive element is a second reflecting surface having a positive power, and light from the first object passes through the first and second groups in order, is reflected by the first reflecting mirror, and is reflected by the first reflecting mirror. After being reflected by the second reflecting mirror toward the two reflecting mirrors, the light sequentially passes through the light passing portion of the first reflecting mirror and the third lens group, thereby forming a primary image of the first object on the second object. It is characterized by the following.

In the above-mentioned projection optical system, the first group having a predetermined power guides light emitted telecentrically from the first object to the second group. Next, the second group of semi-transmissive elements does not block light from the first group via the second group to the first reflecting mirror. Further, the translucent element is a support for the second reflecting mirror, the optical surface of which is the second reflecting mirror.
It is a reflector. The second reflecting mirror has a function of obtaining power for forming an image of the first object on the second object in the projection optical system. With this power of the second reflecting mirror, chromatic aberration of the projection optical system can be reduced, and the number of refraction members can be reduced to increase the NA. Further, since the first and second reflecting mirrors are arranged as described above, it is not necessary to bend the optical axis, and the projection optical system can be downsized as a whole. In this projection optical system, since no intermediate image is formed, the entire length of the projection optical system (that is, the distance between the first object and the second object)
Can be shortened, thereby making the imaging state less susceptible to environmental changes (particularly atmospheric pressure changes) around the projection optical system. Therefore, even when absorption of illumination light is a problem (especially in the extreme ultraviolet region), highly accurate reduced projection can be performed.

The light-passing portion at the center of the first reflecting mirror may be hollow and the first reflecting mirror may have an annular shape. However, the light-passing portion at the center of the first reflecting mirror may be semi-transmissive. Can also. However, in consideration of the light amount loss, it is desirable that the first reflecting mirror has a high reflectance and the light passing portion is hollow. In this case, it is preferable that the shielding ratio (the ratio of the area of the light beam incident on the light passing portion to the total area of the light beam toward the first reflecting mirror side) be 15% or less.

According to a second aspect of the present invention, in the projection optical system of the first aspect, the first reflecting mirror has a positive power.

By sharing the power to the first reflecting mirror, the chromatic aberration of the projection optical system can be further reduced, and the number of refracting members can be reduced to further increase the NA. That is, the first reflecting mirror and the second
By sharing most of the power contributing to the imaging by the projection optical system with the reflector, it becomes possible to rationally correct aberrations including Petzval sum. Further, by sharing the power between the first reflecting mirror and the second reflecting mirror, the diameters of both reflecting mirrors can be suppressed to be relatively small.

According to a third aspect of the present invention, in the projection optical system according to the second aspect, the lateral magnification of the first reflecting mirror is β.
Assuming that M1 and β is the lateral magnification of the entire optical system, the following condition is satisfied: 1 <βM1 / β <4 (1)

Conditional expression (1) is a conditional expression for defining an appropriate power of the first reflecting mirror. If βM1 / β is less than 1 below the lower limit of conditional expression (1), the power of the first reflecting mirror becomes strong, making it difficult to correct coma, and correcting the Petzval sum because it is too negative. (Curvature correction) becomes difficult. On the other hand, if βM1 / β becomes 4 or more, exceeding the upper limit value of the conditional expression (1), the power of the first reflecting mirror becomes weak, and a load for aberration correction is applied to other groups. For example, if the power insufficient in the first reflecting mirror is supplemented by the third lens unit or the like, the power of the third lens unit or the like becomes too high, so that it becomes difficult to correct chromatic aberration. Further, if the power insufficient in the first reflecting mirror is supplemented by the second reflecting mirror, the power of the second reflecting mirror is too high, which is disadvantageous in correcting coma and the like.

The projection optical system according to claim 4 is the projection optical system according to any one of claims 1 to 3, wherein
When the lateral magnification of the reflecting mirror is βM2 and the lateral magnification of the entire optical system is β, the condition of −4 <βM2 / β <−1 (2) is satisfied.

Conditional expression (2) is a conditional expression for defining an appropriate power of the second reflecting mirror. If βM2 / β is equal to or lower than −4 because of falling below the lower limit value of conditional expression (2), the power of the second reflecting mirror is weakened, and the load for aberration correction is applied to other groups. That is, as in the case of the second aspect, it becomes difficult to correct chromatic aberration or disadvantageous in correcting coma and the like. Conditional expression (2)
When βM2 / β becomes −1 or more after exceeding the upper limit of
The power of the reflector becomes strong, making it difficult to correct coma aberration and correcting negative Petzval sum (curvature correction)
Becomes difficult.

The projection optical system according to claim 5 satisfies the condition of NA> 0.6 when the maximum numerical aperture on the image side is NA in the projection optical system according to claim 3 or 4. .

When the above-mentioned conditional expression is satisfied and NA is larger than 0.6, the amount of light shielded on the center side of the first reflecting mirror is relatively small, and the loss of light amount by the first reflecting mirror is reduced.

A projection optical system according to claim 6 is the projection optical system according to any one of claims 1 to 4, and has at least one aspheric surface.

By providing such an aspherical surface, the number of optical elements constituting the projection optical system can be reduced.
A small and low-loss projection optical system can be realized.

The projection optical system according to claim 7 is the projection optical system according to any one of claims 1 and 6, wherein
In addition, the refraction member constituting the third group is made of a single glass material.

By configuring the projection optical system with a single glass material as described above, it is possible to easily obtain materials and reduce manufacturing costs.

According to an eighth aspect of the present invention, in the projection optical system according to any one of the first to seventh aspects, all optical members constituting the projection optical system are substantially along a common optical axis. The area occupied by the light passing portion includes the optical axis.

By arranging all optical members (each lens and reflecting mirror) constituting the projection optical system along a common optical axis, the structure of a lens barrel for holding each optical member can be simplified. And the adjustment work at the time of manufacturing can be facilitated. In this projection optical system, an optical member having the power closest to the first object side in the first group to an optical member having the power closest to the second object side in the third group has a coaxial arrangement. This does not prevent, for example, disposing a plane mirror for bending the optical path on the optical path closer to the first object than the first lens unit or on the optical path closer to the second object than the third lens unit.

Further, the projection exposure apparatus according to claim 9 is
A first support member that supports the first object, a second support member that supports the second object, and an illumination optical system that illuminates the first object;
The projection optical system according to any one of claims 1 to 8 is provided.

In the projection exposure apparatus, since the projection optical system according to any one of claims 1 to 8 is used, the NA can be increased while preventing deterioration of the imaging characteristics during projection exposure, and The miniaturization makes it less susceptible to changes in the surrounding environment. Therefore, even when absorption of illumination light poses a problem (especially in the extreme ultraviolet region), highly accurate reduced projection exposure can be performed.

In the projection exposure apparatus according to the ninth aspect, it is preferable that the light supplied from the illumination optical system is 200 nm or less.

In the projection exposure method according to a tenth aspect, a step of illuminating an original plate, which is a first object on which a predetermined circuit pattern is drawn, with ultraviolet exposure light,
Forming an image of the original illuminated on the substrate as the second object using any one of the projection optical systems.

In the projection exposure method, since the projection optical system according to any one of the first to eighth aspects is used, even when absorption of illumination light is a problem (especially in the extreme ultraviolet region), the projection exposure method is not limited. Accurate reduction projection exposure becomes possible.

The third lens unit having a positive power achieves image-side telecentricity and has a function of forming an image with a large numerical aperture. Third group focal length f
3 preferably satisfies the following relationship when the distance between the first object and the second object is L0.

0.1 <f3 / L0 <0.2 (3) If the lower limit of conditional expression (3) is exceeded, the power of the third lens unit becomes too strong, making it difficult to correct coma. At the same time, the occurrence of chromatic aberration also increases. Conversely, if the upper limit of conditional expression (3) is exceeded, it will be difficult to ensure telecentricity, and the aperture of the second reflecting mirror will be large.

[0030]

Next, an embodiment according to the present invention will be described in detail. The projection optical system in this embodiment is applied to the projection exposure apparatus shown in FIG.

As shown in the figure, a reticle R (first object) as a projection master on which a predetermined circuit pattern is formed is disposed on the object plane of the projection optical system PL. , A wafer W (second object) as a substrate is arranged. Reticle R is reticle stage RS
, And the wafer W is held on the wafer stage WS. An illumination optical device IS for uniformly illuminating the reticle R is disposed above the reticle.

With the above configuration, the illumination light supplied from the illumination optical device IS illuminates the reticle, and the projection optical system P
An image of the light source in the illumination optical device IS is formed at the pupil position of L, and so-called Koehler illumination is performed. Then, the pattern image of the reticle illuminated by Koehler is exposed and transferred onto wafer W by projection optical system PL.

This embodiment shows an example of the projection optical system PL when an F ₂ laser or the like that supplies light having an exposure wavelength λ of 200 nm or less is used as a light source disposed inside the illumination optical device IS. FIGS. 2 and 3 show the lens configuration of the projection optical system according to the first and second embodiments of the present invention.

In FIGS. 2 and 3, the projection optical system of each embodiment includes, as optical elements, a first lens group G1 having positive power in the order in which light travels from the first object to the second object. , A second lens group G2 having a negative power and including a translucent element, and a first lens group G2 having a positive power.
It has a reflecting mirror M1, a second reflecting mirror M2 having a positive power and comprising a semi-transmissive surface provided on the optical surface of the second lens group G2, and a third lens group G3 having a positive power. In addition, the projection optical systems of both embodiments are arranged on the object side (reticle R side).
In addition, it is almost telecentric on the image side (wafer W side) and has a reduction magnification. [First Embodiment] The specific structure of the first embodiment shown in FIG. 2 will be described. The first lens group G1 includes a positive meniscus lens L111 convex on the second object side and a convex meniscus lens L111 on the first object side. And a negative meniscus lens L121. Second
The lens group G2 includes a positive meniscus lens L211 that is convex on the first object side, and the optical surface on the second object side of the meniscus lens L211 is semi-transmissive and is disposed on the path behind the light. Also serves as reflecting mirror M2. That is, the second reflecting mirror M2 has a positive power that is concave toward the second object. The first reflecting mirror M1 is a reflecting concave mirror having a positive power that is concave toward the first object. The third lens group G3 is a first lens group.
It comprises a positive meniscus lens L311 convex on the object side.
The pupil position of the projection optical system of the first embodiment is near the second reflecting mirror M2 in the optical path toward the third lens group G3 after being reflected by the first reflecting mirror M1 and then reflected by the second reflecting mirror M2. . In this embodiment, the numerical aperture on the second object side is 0.70, and the maximum image height is 13.2.

In the following, Table 1 and Table 2 show the values of the specifications and the numerical values corresponding to the conditions of this embodiment, respectively. In the following table, r indicates the radius of curvature of the lens surface, d indicates the lens surface interval, and G indicates the glass material or the like. The surface number indicates the order along the path of light from the first object side, and i-plane (i = 1, 2, 3,...)
Is the radius of curvature of ri, and the distance on the optical axis between the i-plane and the (i + 1) -plane is di. In the following tables, En represents 10 ⁿ . Here, the refraction surface and the reflection surface include:
An aspheric surface is applied, and the surface shape is expressed by the following equation. Z: sag amount in the optical axis direction c: curvature at the vertex of the surface K: conical constant A, B, C, D: fourth-order, sixth-order, eighth-order, tenth-order coefficients

In the first embodiment, the numerical aperture on the second object side is 0.70, and the maximum image height is 13.2.

[0037]

[Table 1] [Specifications of the first embodiment] Surface number rd G First object surface 368 368.708 1 -13532.086 26.622 CaF ₂ L111 2 -386.875 362.532 K: -1.633565 A: -0.155804E-09, B: -0.548318 E-14, C: -0.150652E-18, D: 0.314185E-23 3 3544.324 20.000 CaF ₂ L121 K: -890.757469 A: 0.349886E-08, B: 0.400316E-12, C: 0.146054E-17, D : -0.109902E-21 4 529.126 139.173 K: -2.027024 A: -0.298245E-08, B: 0.545202E-12, C: 0.272539E-17, D: -0.381005E-22 5 1717.892 20.000 CaF ₂ L211 K: -46.459457 A: -0.790213E-09, B: -0.703437E-13, C: 0.572193E-17, D: -0.122668E-21 6 2560.341 122.096 K: 11.158260 A: 0.329528E-08, B: -0.793150E -13, C: 0.218650E-17, D: -0.125011E-21 7 -493.062 -122.096 Mirror M1 K: -0.469071 A: 0.690386E-10, B: 0.432558E-14, C: 0.224718E-18, D : 0.387568E-23 8 2560.341 122.196 Mirror M2 K: 11.158259 A: 0.329528E-08, B: -0.793150E-13, C: 0.218650E-17, D: -0.125011E-21 9 80.854 52.489 CaF ₂ L311 K: 0.779385 A: -0.860218E-07, B: -0.104045E-10, C: -0.211482E-14, D: -0.281200E-18 10 2342629.747 10.000 K: -0.307953E25 A: 0.454 704E-06, B: 0.795942E-10, C: -0.118033E-13, D: 0.894680E-16 2nd object plane ∞

[0038]

[Table 2] Numerical values corresponding to the condition of the first embodiment βM1 / β = 1.484 βM2 / β = -3.423 NA = 0.70 f3 / L0 = 144.387 157.6 nm,
A light source having a full width at half maximum of 10 pm is used. At this time, the refractive index of the fluorite (CaF ₂ ) as a glass material is in accordance with the following table.

[Second Embodiment] The specific configuration of the second embodiment shown in FIG. 3 will be described.
It has a biconvex lens L112 and a biconcave lens L122. The second lens group G2 is composed of a negative meniscus lens L212 convex on the first object side, and the optical surface on the second object side of the meniscus lens L212 is semi-transmissive and has a second reflecting mirror on the rear optical path. Also serves as M2. That is, the second reflecting mirror M2 has a positive power that is concave toward the second object. The first reflecting mirror M1 is a reflecting concave mirror having a positive power that is concave toward the first object. The third lens group G3 is a first lens group.
It consists of a positive meniscus lens L312 convex on the object side.
The pupil position of the projection optical system of the second embodiment is near the second reflecting mirror M2 in the optical path toward the third lens group G3 after being reflected by the first reflecting mirror M1 and then reflected by the second reflecting mirror M2. .

In the second embodiment, the numerical aperture on the second object side is 0.65, and the maximum image height is 13.2.

In the following, Table 3 and Table 4 show values of specifications and numerical values corresponding to the conditions of the present embodiment, respectively.

[0042]

[Table 3] Surface number rd G 1st object surface 373 373.925 1 377.49401 40.000 CaF ₂ L112 2 -1037.99195 72.829 K: -15.089779 A: 0.157461E-08, B: -0.742747E-13, C: 0.721453E-19, D: -0.248569E-22 3 -10816.85392 30.000 CaF ₂ L122 K: -3341.316396 A: -0.158618E-10, B: -0.732884E-13, C: -0.318084E-17, D: -0.610329E-23 4 455.01461 350.302 K: 0.079347 A: -0.374353E-09, B: 0.653693E-13, C: -0.314437E-17, D: 0.836155E-22 5 2442.05050 30.000 CaF ₂ L212 K: 1.390486 A: 0.107586E-10, B: -0.123113E-14, C: 0.927729E-19, D: 0.246017E-24 6 1138.44569 149.198 K: 10.792246 A: 0.143244E-08, B: -0.227899E-13, C: 0.342359E-19, D : 0.129887E-22 7 -673.78431 -149.198 Mirror M1 K: -1.032553 A: 0.466606E-09, B: 0.864389E-14, C: 0.641885E-19, D: 0.101183E-23 8 1138.44569 152.997 Mirror M2 K: 10.792246 A: 0.143245E-08, B: -0.227900E-13, C: -0.342360E-19, D: -0.129887E-22 9 81.33390 65.680 CaF ₂ L312 K: 0.098644 A: 0.816050E-08, B: 0.538284 E-11, C: 0.259558E-15, D: 0.606279E-18 10 2550266.1709 10.000 K: -0.307953E25 A: 0.416458E-06, B: -0.122480E-09, C: 0.263862E-12, D: -0.252420E-15 2nd object plane ∞

[0043]

[Table 4] Numerical values corresponding to the condition of the second embodiment βM1 / β = 2.498 βM2 / β = −2.354 NA = 0.65 f3 / L0 = 145.242 For reference, FIGS. 4 and 5. 6 shows various aberrations of the first example, and FIGS. 6 and 7 show various aberrations of the second example. As is clear from the specifications and aberrations of the above embodiments, the projection optical system of each embodiment has a sufficient chromatic aberration correction capability even when a light source having a center wavelength of 157.6 nm and a full width at half maximum of 10 pm is used. It is understood that it has a large numerical aperture while having.

Although the present invention has been described with reference to the embodiment, the present invention is not limited to the above embodiment.

For example, in the above embodiment, the second reflecting mirror M2
Is a front surface reflecting mirror, but the second reflecting mirror may be a back surface reflecting mirror.

In the above embodiment, the light passing portion of the first reflecting mirror M1 is provided by forming a perforated portion in the base material of the reflecting mirror, but the first reflecting mirror M1 is provided with the perforated portion as described above. It may be provided on the front surface or the back surface of the base material having no portion. That is, the reflection surface is partially formed such that the center of the front surface or the back surface of the base material becomes the transmission portion (a ring-shaped reflection surface). In this case, the manufacture of the reflecting mirror itself becomes easy.

In the above embodiment, an F ₂ laser (wavelength: 157 nm) is used as illumination light for exposure. Instead, an ArF excimer laser (wavelength: 193 nm), which is vacuum ultraviolet (VUV) light, like the F ₂ laser, is used instead. ) And g-line, i
Rays and deep ultraviolet (DUV) such as KrF excimer laser
Light can be used.

In the scanning exposure apparatus using the F ₂ laser as the light source as in the above embodiment, the optical elements (lens elements) used in the illumination optical system are all fluorite, and the F ₂ laser light source, the illumination optical system, The air in the projection optical system is replaced with helium gas, and the space between the illumination optical system and the projection optical system and between the projection optical system and the wafer are filled with the helium gas.

In an exposure apparatus using an F ₂ laser,
A reticle made of any one of fluorite, fluorine-doped synthetic quartz, magnesium fluoride, and quartz is used.

Instead of the excimer laser, a harmonic of a solid-state laser such as a YAG laser having an oscillation spectrum at any one of 248 nm, 193 nm and 157 nm may be used.

In addition, a single-wavelength laser in the infrared or visible range oscillated from a DFB semiconductor laser or a fiber laser is amplified by, for example, a fiber amplifier doped with erbium (or both erbium and ytterbium), and nonlinearly amplified. A harmonic wave whose wavelength is changed to ultraviolet light using a crystal may be used.

For example, if the oscillation wavelength of the single-wavelength laser is in the range of 1.51 to 1.59 μm, the eighth harmonic whose generation wavelength is in the range of 189 to 199 nm, or the generation wavelength of 151 to 159 nm is 151 to 199 nm. A 10th harmonic within the range of 159 nm is output. In particular, the oscillation wavelength is set to 1.544 to 1.5.
When the wavelength is within the range of 53 μm, an 8th harmonic within the range of 193 to 194 nm, that is, ultraviolet light having substantially the same wavelength as the ArF excimer laser is obtained, and the oscillation wavelength is 1.57 to 1.
When the wavelength is within the range of 58 μm, a tenth harmonic within the range of 157 to 158 nm, that is, ultraviolet light having substantially the same wavelength as the F ₂ laser can be obtained. The oscillation wavelength is set to 1.03 to 1.
When the wavelength is within the range of 12 μm, the generated wavelength is 147 to 160.
The seventh harmonic within the range of nm is output. In particular, when the oscillation wavelength is within the range of 1.099 to 1.106 μm, the seventh harmonic within the range of 157 to 158 μm, that is, the F ₂ laser UV light having substantially the same wavelength is obtained.
In addition, as a single wavelength oscillation laser, ytterbium (Y
b) Use a doped fiber laser.

By the way, the projection optical system is not only an exposure apparatus used for manufacturing a semiconductor element, but also an exposure apparatus used for manufacturing a display including a liquid crystal display element for transferring a device pattern onto a glass plate, The present invention can also be applied to an exposure apparatus used for manufacturing a head, which transfers a deposition pattern onto a ceramic wafer, and an exposure apparatus used for manufacturing an imaging device (such as a CCD). Further, the present invention can be applied to an exposure apparatus that transfers a circuit pattern onto a glass substrate, a silicon wafer, or the like in order to manufacture a reticle or a mask.

[Brief description of the drawings]

FIG. 1 is a diagram showing a schematic configuration when a projection optical system according to the present invention is applied to an exposure apparatus.

FIG. 2 is a lens configuration diagram of a first embodiment according to the present invention.

FIG. 3 is a lens configuration diagram of a second embodiment according to the present invention.

FIG. 4 is a diagram illustrating various aberrations of the first embodiment according to the present invention.

FIG. 5 is a diagram illustrating various aberrations of the first embodiment according to the present invention.

FIG. 6 is a diagram illustrating various aberrations of the second embodiment according to the present invention.

FIG. 7 is a diagram illustrating various aberrations of the second embodiment according to the present invention.

[Explanation of symbols]

G1 First lens group G2 Second lens group G3 Third lens group IS Illumination optical device L111, L121, L211, L212 Meniscus lens L112, L122 Biconvex lens L311, L312 Meniscus lens M1 First reflecting mirror M2 Second reflecting mirror M2 2 reflection mirror PL projection optical system R reticle RS reticle stage W wafer WS wafer stage

Claims (10)

[Claims] 1. A projection optical system for reducing and projecting an image of a first object onto a second object based on an image-side telecentric light beam, wherein the projection optical system is arranged on an optical path of light passing through the first object, and A first group including two lens elements and having a predetermined power; a second group including a semi-transmissive element having a predetermined power and disposed between the first group and the second object; A first reflecting mirror disposed between a second group and the second object, having a predetermined power, and having a light transmitting portion in a predetermined area including a center; A third group having a positive power disposed therebetween, and the optical surface of the semi-reflective element in the second group,
A second reflecting surface having a positive power, wherein light from the first object sequentially passes through the first group and the second group, is reflected by the first reflecting mirror, and is reflected by the second reflecting mirror. A first image of the first object is formed on the second object by sequentially passing through the light passing portion of the first mirror and the third group after being reflected by the second mirror. A projection optical system. 2. The projection optical system according to claim 1, wherein said first reflecting mirror has a positive power. 3. When the lateral magnification of the first reflecting mirror is βM1, and the lateral magnification of the entire optical system is β, the condition of 1 <βM1 / β <4 (1) is satisfied. The projection optical system according to claim 2. 4. The lateral magnification of the second reflecting mirror is βM2,
The projection according to any one of claims 1 to 3, wherein, when a lateral magnification of the entire optical system is β, a condition of -4 <βM2 / β <-1 (2) is satisfied. Optical system. 5. The image-side maximum numerical aperture of the projection optical system is set to NA.
5. The projection optical system according to claim 3, wherein the condition NA> 0.6 is satisfied. 6. 6. The projection optical system according to claim 1, wherein the projection optical system has at least one aspherical surface. 7. The projection optical system according to claim 1, wherein the refracting members constituting the first to third groups are made of a single glass material. 8. The optical system according to claim 1, wherein all of the optical members constituting the projection optical system are disposed substantially along a common optical axis, and a region occupied by the light passing portion includes the optical axis. The projection optical system according to claim 1. 9. A first support member for supporting the first object, a second support member for supporting the second object, and the first support member.
A projection exposure apparatus comprising: an illumination optical system for illuminating an object; and the projection optical system according to claim 1. 10. illuminating an original plate, which is the first object, on which a predetermined circuit pattern is drawn, with exposure light in an ultraviolet region;
A step of forming the illuminated image of the original plate on the substrate as the second object using the projection optical system according to any one of claims 1 to 8.