JP2000202768A - Polishing method and device and manufacture of thin film magnetic head - Google Patents
Polishing method and device and manufacture of thin film magnetic headInfo
- Publication number
- JP2000202768A JP2000202768A JP551199A JP551199A JP2000202768A JP 2000202768 A JP2000202768 A JP 2000202768A JP 551199 A JP551199 A JP 551199A JP 551199 A JP551199 A JP 551199A JP 2000202768 A JP2000202768 A JP 2000202768A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- layer
- polished
- waste liquid
- magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/048—Lapping machines or devices; Accessories designed for working plane surfaces of sliders and magnetic heads of hard disc drives or the like
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、磁性体層を被覆し
て埋め込んだ絶縁層を有する基板表面を、磁性体層が露
出するまで研磨して平坦化する研磨方法及び装置に関す
る。また本発明は、被研磨物表面を研磨して平坦化する
平坦化工程を有する薄膜磁気ヘッドの製造方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing method and an apparatus for polishing a substrate surface having an insulating layer embedded and covered with a magnetic material layer by polishing until the magnetic material layer is exposed. The present invention also relates to a method for manufacturing a thin-film magnetic head having a flattening step of polishing and flattening the surface of an object to be polished.
【０００２】[0002]
【従来の技術】磁気ディスク装置の読み出し／書き込み
ヘッドとして用いられる薄膜磁気ヘッドの製造では、高
い平坦度を有する表面を形成する際に化学的機械研磨
（Ｃｈｅｍｉｃａｌ ｍｅｃｈａｎｉｃａｌ ｐｏｌｉ
ｓｈｉｎｇ；以下ＣＭＰという）が用いられる。ＣＭＰ
では、まず、回転する研磨定盤上に張り渡された研磨パ
ッドの研磨面と、研磨ヘッドに保持された被研磨物とし
ての基板の被研磨表面とを圧接させる。そして、研磨パ
ッドの研磨面に研磨剤であるスラリを供給しつつ、研磨
パッドと研磨ヘッドとをそれぞれ回転させながら、スラ
リを研磨パッドと被研磨表面との間に供給することによ
り、被研磨表面を化学的及び機械的に研磨するようにな
っている。このＣＭＰを用いた研磨により、局所的な平
坦度と共に大域的な所望の平坦度を得ることができるよ
うになる。2. Description of the Related Art In the manufacture of a thin-film magnetic head used as a read / write head of a magnetic disk drive, a chemical mechanical polishing (Chemical mechanical polishing) is used to form a surface having high flatness.
(hereinafter referred to as CMP). CMP
First, a polishing surface of a polishing pad stretched on a rotating polishing table is brought into pressure contact with a polishing surface of a substrate as a polishing object held by a polishing head. By supplying the slurry between the polishing pad and the surface to be polished while rotating the polishing pad and the polishing head while supplying the slurry as the polishing agent to the polishing surface of the polishing pad, Are chemically and mechanically polished. By polishing using this CMP, it is possible to obtain global desired flatness as well as local flatness.
【０００３】さて、このＣＭＰを用いた表面研磨による
平坦化プロセスにおいて、研磨後の研磨対象膜が所定の
残膜厚を有するように研磨を制御することは、完成した
素子の性能を左右する点で極めて重要である。そのた
め、研磨終了時点を如何に正確に決定できるかがＣＭＰ
の平坦化プロセス上の課題となっている。In the flattening process by surface polishing using CMP, controlling the polishing so that the film to be polished has a predetermined remaining film thickness after polishing is a point that affects the performance of a completed device. Is extremely important. Therefore, how accurately the polishing end point can be determined by the CMP
Has become an issue in the flattening process.
【０００４】例えばロット単位で複数の基板に研磨処理
を施すような場合、従来のＣＭＰでは、ロットの先頭の
基板に対して所定時間間隔で被研磨表面の膜厚の変化量
を測定するか、あるいはロットの初めの数枚の基板を用
いて、基板毎に研磨時間を変えて研磨を行い被研磨表面
の研磨量を測定する。そしてそれらの結果から研磨時間
と研磨量の関係を求め、ロット単位の基板に対する研磨
終了時点を決定する。次いで、残りの複数の基板につい
ては決定された研磨終了時点になるまでＣＰＭによる研
磨を行うようにしている。For example, in a case where a plurality of substrates are polished in lot units, in conventional CMP, the amount of change in the film thickness of the surface to be polished is measured at predetermined time intervals with respect to the first substrate in the lot. Alternatively, using the first few substrates of a lot, polishing is performed while changing the polishing time for each substrate, and the polishing amount of the surface to be polished is measured. Then, the relationship between the polishing time and the polishing amount is obtained from these results, and the end point of polishing of the substrate in lot units is determined. Next, the remaining plurality of substrates are polished by the CPM until the determined polishing end point is reached.
【０００５】[0005]
【発明が解決しようとする課題】ところが、現実には同
一ロット内の複数の基板同士間であっても成膜状態はそ
れぞれ微妙に相違している。異なるロット間の基板では
さらに成膜状態や積層状態も相違しているのが普通であ
る。一方、通常ＣＭＰに供される装置も経時的に装置特
性が変化する。従って、上述のような方法で研磨終了時
点を決定しても必ずしも各基板を所定の残膜厚で研磨す
ることができず、研磨時間が足りなくて磁性体層が露出
しなかったり、研磨時間が長すぎて磁性体層を所定量以
上研磨してしまう。特に、磁性体層の残膜厚が不足した
場合、形成された素子が所望の性能を発揮し得ない等の
問題が生じる。However, in reality, even between a plurality of substrates in the same lot, the film formation state is slightly different from each other. In general, substrates between different lots also differ in the state of film formation and the state of lamination. On the other hand, a device that is usually subjected to CMP also changes its characteristics over time. Therefore, even if the polishing end point is determined by the above-described method, each substrate cannot always be polished with a predetermined remaining film thickness, and the magnetic layer is not exposed because the polishing time is insufficient, or the polishing time is insufficient. Is too long to polish the magnetic layer over a predetermined amount. In particular, when the remaining film thickness of the magnetic layer is insufficient, there arises a problem that the formed element cannot exhibit desired performance.
【０００６】本発明の目的は、所定の残膜厚になるよう
に被研磨物を研磨できる研磨方法及び装置を提供するこ
とにある。また、本発明の目的は、磁性体層を被覆して
埋め込んだ絶縁層を有する基板表面に対して、磁性体層
が露出するまで研磨して基板表面を平坦化させる際、研
磨終了時点を容易且つ正確に検出して研磨を終了させる
ことができる研磨方法及び装置を提供することにある。
さらに、本発明の目的は、基板上に形成される磁性体層
を有する素子の量産性を向上させた研磨方法及び装置を
提供することにある。またさらに、本発明の目的は、研
磨処理における研磨対象膜の残膜厚を所定膜厚に形成で
き、素子製造の量産性を向上させた薄膜磁気ヘッドの製
造方法を提供することにある。An object of the present invention is to provide a polishing method and apparatus capable of polishing an object to be polished so as to have a predetermined remaining film thickness. Further, an object of the present invention is to easily polish the surface of a substrate having an insulating layer coated and embedded in a magnetic layer when the polishing is performed until the magnetic layer is exposed to flatten the substrate surface. Another object of the present invention is to provide a polishing method and apparatus capable of accurately detecting and terminating polishing.
It is a further object of the present invention to provide a polishing method and apparatus which improve the mass productivity of an element having a magnetic layer formed on a substrate. Still another object of the present invention is to provide a method of manufacturing a thin-film magnetic head in which the remaining film thickness of a film to be polished in a polishing process can be formed to a predetermined film thickness, thereby improving the mass productivity of element manufacturing.
【０００７】[0007]
【課題を解決するための手段】上記目的は、磁性体層を
被覆して埋め込んだ絶縁層を有する基板表面を磁性体層
が露出するまで研磨して、基板表面を平坦化する研磨方
法であって、研磨の際に用いられた研磨剤の廃液の成分
をほぼ実時間で分析し、廃液の成分の変化に基づいて研
磨を終了させることを特徴とする研磨方法によって達成
される。また、本発明の研磨方法において、研磨の終了
時点は、磁性体層が研磨されることにより廃液中に含ま
れる磁性体の量の変化に基づいて決定されることを特徴
とする。さらに、本発明の研磨方法において、化学的機
械研磨が用いられることを特徴とする。SUMMARY OF THE INVENTION The object of the present invention is to provide a polishing method for polishing a surface of a substrate having an insulating layer which covers and embeds a magnetic material layer until the magnetic material layer is exposed, thereby flattening the substrate surface. Thus, a polishing method is characterized in that components of a waste liquid of an abrasive used in polishing are analyzed almost in real time, and polishing is terminated based on a change in a component of the waste liquid. Further, in the polishing method of the present invention, the end point of the polishing is determined based on a change in the amount of the magnetic material contained in the waste liquid by polishing the magnetic material layer. Further, in the polishing method of the present invention, chemical mechanical polishing is used.
【０００８】また上記目的は、被研磨物表面を研磨して
平坦化する平坦化工程を有する薄膜磁気ヘッドの製造方
法であって、平坦化工程として上記本発明の研磨方法を
用いることを特徴とする薄膜磁気ヘッドの製造方法によ
って達成される。Another object of the present invention is a method of manufacturing a thin film magnetic head having a flattening step of polishing and flattening the surface of an object to be polished, wherein the polishing method of the present invention is used as the flattening step. This is achieved by a method of manufacturing a thin film magnetic head as described below.
【０００９】さらに上記目的は、磁性体層を被覆して埋
め込んだ絶縁層を有する基板表面を磁性体層が露出する
まで研磨して、基板表面を平坦化する研磨装置であっ
て、研磨の際に用いられた研磨剤の廃液の成分をほぼ実
時間で分析する分析手段と、廃液の成分の変化に基づい
て研磨を終了させる制御手段とを有することを特徴とす
る研磨装置によって達成される。A further object of the present invention is to provide a polishing apparatus for polishing a surface of a substrate having an insulating layer which covers and embeds a magnetic material layer until the magnetic material layer is exposed, thereby flattening the substrate surface. The present invention is attained by a polishing apparatus having analysis means for analyzing a component of a waste liquid of an abrasive used for the above in almost real time, and control means for terminating polishing based on a change in a component of the waste liquid.
【００１０】[0010]
【発明の実施の形態】本発明の一実施の形態による研磨
方法及び装置、及び薄膜磁気ヘッドの製造方法を図１乃
至図４を用いて説明する。まず、本実施の形態による研
磨方法及び薄膜磁気ヘッドの製造方法で用いられる研磨
装置としての化学的機械研磨装置（以下、ＣＭＰ装置と
いう）の基本的な構成の概略を図１及び図２を用いて説
明する。図１は、被研磨物としての基板８の表面を研磨
パッドに圧接させて、ＣＭＰによる平坦化研磨を実施し
ている状態を示している。図１において、ＣＭＰ装置１
は回転可能な研磨定盤（プラテン）２を有している。研
磨定盤２上面には研磨パッド（研磨布）４が全面に張り
渡されている。図示しない回転機構により研磨定盤２を
回転させることにより研磨パッド４を回転させることが
できるようになっている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A polishing method and apparatus according to an embodiment of the present invention and a method for manufacturing a thin-film magnetic head will be described with reference to FIGS. First, an outline of a basic configuration of a chemical mechanical polishing apparatus (hereinafter, referred to as a CMP apparatus) as a polishing apparatus used in the polishing method and the method of manufacturing a thin-film magnetic head according to the present embodiment will be described with reference to FIGS. Will be explained. FIG. 1 shows a state in which the surface of a substrate 8 as an object to be polished is brought into pressure contact with a polishing pad to perform planarization polishing by CMP. In FIG. 1, a CMP apparatus 1
Has a rotatable polishing platen (platen) 2. A polishing pad (polishing cloth) 4 is stretched over the entire surface of the polishing platen 2. The polishing pad 4 can be rotated by rotating the polishing platen 2 by a rotating mechanism (not shown).
【００１１】基板８は、研磨ヘッド６により回転可能に
保持され、被研磨表面である基板８表面は、回転する研
磨パッド４の研磨面に圧接している。また、研磨パッド
４の研磨面上方にスラリ（研磨剤）を供給するスラリ供
給管１０の供給口が位置している。The substrate 8 is rotatably held by the polishing head 6, and the surface of the substrate 8, which is the surface to be polished, is in pressure contact with the polishing surface of the rotating polishing pad 4. Further, a supply port of a slurry supply pipe 10 for supplying a slurry (abrasive) is located above the polishing surface of the polishing pad 4.
【００１２】図２は、本実施の形態による研磨装置とし
てのＣＭＰ装置１を側面から見た断面図である。図１で
は図示を省略したが、図２では研磨定盤２を回転させる
回転機構１２が示されている。また研磨ヘッド６を回転
させる回転機構１６も示されている。図２において、研
磨定盤２の回転方向の周囲には、研磨定盤２側面と所定
の空隙を有して壁部が形成されたドレイン１４が配置さ
れている。研磨定盤２側面と壁部とで形成される空隙か
ら、ＣＭＰによる研磨の際に供給されたスラリの使用済
み廃液がドレイン１４内に流れ落ちるようになってい
る。ドレイン１４はパイプ２２を介して分析／制御装置
１８と接続されている。従って、ドレイン１４内に流れ
落ちたスラリの廃液はパイプ２２を通って分析／制御装
置１８内の分析系に導かれるようになっている。分析系
を通過した廃液は、パイプ２０を介してＣＭＰ装置１外
に排出されるようになっている。分析／制御装置１８の
分析系は、磁性体層を被覆して埋め込んだ絶縁層が形成
された基板８表面を、ＣＭＰ装置１により磁性体層が露
出するまで研磨して平坦化する際、研磨に用いられたス
ラリの廃液の成分をほぼ実時間で分析する機能を有して
いる。FIG. 2 is a cross-sectional view of the CMP apparatus 1 as a polishing apparatus according to the present embodiment, as viewed from the side. Although not shown in FIG. 1, FIG. 2 shows a rotation mechanism 12 for rotating the polishing platen 2. Further, a rotation mechanism 16 for rotating the polishing head 6 is also shown. In FIG. 2, a drain 14 is formed around the polishing platen 2 in the rotational direction, the drain 14 having a wall with a predetermined gap from the side surface of the polishing platen 2. The used waste liquid of the slurry supplied at the time of polishing by the CMP flows down into the drain 14 from the gap formed between the side surface of the polishing platen 2 and the wall. The drain 14 is connected to the analysis / control device 18 via a pipe 22. Therefore, the waste liquid of the slurry flowing down into the drain 14 is guided to the analysis system in the analysis / control device 18 through the pipe 22. The waste liquid that has passed through the analysis system is discharged out of the CMP apparatus 1 via the pipe 20. The analysis system of the analyzer / controller 18 performs polishing when the surface of the substrate 8 on which the insulating layer is formed by covering and embedding the magnetic layer is polished and planarized by the CMP apparatus 1 until the magnetic layer is exposed. It has a function to analyze the components of the waste liquid of the slurry used in the real time almost in real time.
【００１３】分析系としては、例えば、流通するスラリ
廃液に対してヘルムホルツ・コイル等を搭載した振動試
料型磁力計（ＶＳＭ）等を適用することができる。ＶＳ
Ｍによりスラリ廃液の磁化特性の変化を検出し、スラリ
廃液中に含まれる磁性体（例えば磁性体層がフェライト
で構成されている場合には、Ｎｉ、Ｆｅ、ＮｉＦｅ）の
成分分析を行う。あるいは、原子吸光・元素分析の手法
によってスラリ廃液中の磁性体の成分分析を行ってもも
ちろんよい。As the analysis system, for example, a vibrating sample magnetometer (VSM) equipped with a Helmholtz coil or the like for the slurry waste liquid flowing therethrough can be applied. VS
A change in the magnetization characteristics of the slurry waste liquid is detected by M, and a component analysis of a magnetic substance (for example, Ni, Fe, NiFe when the magnetic layer is made of ferrite) contained in the slurry waste liquid is performed. Alternatively, of course, the component analysis of the magnetic substance in the slurry waste liquid may be performed by the method of atomic absorption / elemental analysis.
【００１４】さらに分析／制御装置１８は、分析系で得
られた廃液の成分の変化に基づいて研磨を終了させる制
御系を有している。制御系では、磁性体層が研磨される
ことによりスラリ廃液中に含まれる磁性体の量の変化に
基づいて研磨の終了時点を決定する。例えば、制御系の
記憶装置に格納されている所定値とスラリ廃液中に含ま
れる磁性体の量とを比較して、所定値を越えた時点を研
磨終了時点と判断するようにしてもよい。制御系は、研
磨の終了を決定すると回転機構１２、１６に対して回転
停止の指令を送出し研磨定盤２及び研磨ヘッド６の回転
を停止させる制御を行うようになっている。Further, the analysis / control device 18 has a control system for terminating polishing based on a change in the component of the waste liquid obtained in the analysis system. The control system determines the end point of the polishing based on a change in the amount of the magnetic material contained in the slurry waste liquid by polishing the magnetic material layer. For example, a predetermined value stored in the storage device of the control system may be compared with the amount of the magnetic substance contained in the slurry waste liquid, and a point in time exceeding the predetermined value may be determined as the polishing end point. When the control system determines that polishing is completed, the control system sends a rotation stop command to the rotation mechanisms 12 and 16 to perform control to stop rotation of the polishing table 2 and the polishing head 6.
【００１５】次に、このような構成のＣＭＰ装置１によ
って基板８表面を研磨する研磨方法及び薄膜磁気ヘッド
の製造方法について、図１及び図２と共に図３及び図４
を用いて説明する。図３及び図４は、薄膜磁気ヘッドを
製造する基板の磁極部分をトラック面に平行な方向に切
った断面を示している。まず、例えばアルティック（Ａ
ｌＴｉＣ）からなる基板８上に例えばアルミナ（Ａｌ２
Ｏ３）からなる下地層としての絶縁層３０を堆積する。
次いで、全面に例えばパーマロイ（ＮｉＦｅ）層を約３
μｍの厚さで形成した後パターニングして薄膜パターン
の下部シールド層３２を形成する。下部シールド層３２
は、再生へッドとなるＭＲ再生素子を外部磁界の影響か
ら保護する磁気シールドとして機能する。なお図３では
基板に形成されている複数の下部シールド層３２のうち
の２つを図示している。Next, a polishing method for polishing the surface of the substrate 8 by the CMP apparatus 1 having such a structure and a method for manufacturing a thin-film magnetic head will be described with reference to FIGS.
This will be described with reference to FIG. 3 and 4 show cross sections of a magnetic pole portion of a substrate for manufacturing a thin film magnetic head cut in a direction parallel to a track surface. First, for example, Altic (A
For example, alumina (Al 2 ) is formed on a substrate 8 made of
An insulating layer 30 as an underlayer made of O 3 ) is deposited.
Next, for example, a permalloy (NiFe) layer is
The lower shield layer 32 of a thin film pattern is formed by patterning after forming a thickness of μm. Lower shield layer 32
Functions as a magnetic shield for protecting the MR reproducing element serving as a reproducing head from the influence of an external magnetic field. FIG. 3 illustrates two of the plurality of lower shield layers 32 formed on the substrate.
【００１６】次に、下部シールド層３２上面を平坦化す
るため、図３に示すように、アルミナを基板全面に堆積
し、下部シールド層３２を埋め込んだ被覆層３４を形成
する。次いで、図１及び図２に示したＣＭＰ装置を用い
たＣＭＰによる平坦化処理を行い、基板８上面を平坦化
する。ＣＭＰによる平坦化では、図４に示すように、被
覆層３４から下部シールド層３２が露出するまで研磨を
行い、最終的には下部シールド層３２及び研磨された被
覆層３４で形成される埋め込み層３６で構成される平坦
化層３８の厚さが例えば約２μｍとなるまで表面研磨を
行う。Next, in order to flatten the upper surface of the lower shield layer 32, as shown in FIG. 3, alumina is deposited on the entire surface of the substrate, and a coating layer 34 in which the lower shield layer 32 is embedded is formed. Next, planarization processing by CMP using the CMP apparatus shown in FIGS. 1 and 2 is performed to planarize the upper surface of the substrate 8. In the planarization by CMP, as shown in FIG. 4, polishing is performed until the lower shield layer 32 is exposed from the cover layer 34, and finally, a buried layer formed by the lower shield layer 32 and the polished cover layer 34 is formed. The surface is polished until the thickness of the flattening layer 38 constituted by 36 becomes, for example, about 2 μm.
【００１７】このＣＭＰを図１及び図２を参照して説明
すると、まず、被研磨物としての基板８の表面が研磨パ
ッド４側に対応するよう研磨ヘッド６に保持する。そし
て、研磨パッド４の研磨面と基板８表面との間で所定の
圧力（例えば、４００ｇ／ｃｍ２）が生じるように両者
を圧接する。次に、スラリ供給管１０から、例えば、ア
ルミナを主成分とするスラリを研磨パッド４の研磨面に
供給しつつ、研磨定盤２および研磨ヘッド６をそれぞれ
回転させて研磨パッド４と基板８表面と圧接させて回転
させる。The CMP will be described with reference to FIGS. 1 and 2. First, a polishing head 6 is held so that the surface of a substrate 8 as an object to be polished corresponds to the polishing pad 4 side. Then, they are pressed against each other so that a predetermined pressure (for example, 400 g / cm 2 ) is generated between the polishing surface of the polishing pad 4 and the surface of the substrate 8. Next, while supplying, for example, a slurry containing alumina as a main component to the polishing surface of the polishing pad 4 from the slurry supply pipe 10, the polishing platen 2 and the polishing head 6 are rotated to respectively rotate the polishing pad 4 and the surface of the substrate 8. And rotate it.
【００１８】スラリ供給管１０から研磨パッド４上に供
給されたスラリは研磨パッド４の研磨面上に拡散し、基
板８表面と研磨パッド４の相対移動に伴って研磨パッド
４と基板８表面との間に供給される。スラリが研磨パッ
ド４と基板８表面との間に入り込み、スラリを介して研
磨パッド４と基板８表面とが擦れ合うことにより、基板
８表面がスラリによって化学的機械的に研磨され平坦化
が行われる。The slurry supplied from the slurry supply pipe 10 onto the polishing pad 4 is diffused on the polishing surface of the polishing pad 4, and the polishing pad 4 and the surface of the substrate 8 are moved with the relative movement of the surface of the substrate 8 and the polishing pad 4. Supplied during. The slurry enters between the polishing pad 4 and the surface of the substrate 8 and rubs between the polishing pad 4 and the surface of the substrate 8 through the slurry, whereby the surface of the substrate 8 is chemically and mechanically polished by the slurry, and planarization is performed. .
【００１９】この平坦化処理の過程において、分析／制
御装置１８の分析系には、ドレイン１４からパイプ２２
を通ってスラリの廃液が流入する。分析系ではその廃液
の成分分析をほぼ実時間で行い、ＶＳＭによる場合には
スラリ廃液の磁化特性の変化を検出し、スラリ廃液中に
含まれる下部シールド層３２の形成材料であるパーマロ
イを構成するＮｉやＦｅの成分分析を行う。In the course of the flattening process, the analysis system of the analysis / control device 18 is connected to the pipe 22 from the drain 14.
Slurry waste liquid flows in through. In the analysis system, the component analysis of the waste liquid is performed in substantially real time, and in the case of VSM, a change in the magnetization characteristics of the slurry waste liquid is detected, and the permalloy, which is a material for forming the lower shield layer 32 contained in the slurry waste liquid, is formed. Analyze the components of Ni and Fe.
【００２０】分析／制御装置１８の制御系では、磁性体
層である下部シールド層３２が研磨されることによりス
ラリ廃液中に含まれるＮｉやＦｅの量の変化に基づいて
研磨の終了時点を決定する。制御系の記憶装置に格納さ
れている所定値とスラリ廃液中に含まれるＮｉやＦｅの
量とを比較して、所定値を越えた時点を研磨終了時点と
判断する。制御系は、研磨の終了を決定すると回転機構
１２、１６に対して回転停止の指令を送出し研磨定盤２
及び研磨ヘッド６の回転を停止させる。The control system of the analysis / control device 18 determines the end point of polishing based on a change in the amount of Ni or Fe contained in the slurry waste liquid by polishing the lower shield layer 32, which is a magnetic layer. I do. By comparing a predetermined value stored in the storage device of the control system with the amount of Ni or Fe contained in the slurry waste liquid, a point in time exceeding the predetermined value is determined as a polishing end point. When the control system determines the end of the polishing, the control system sends a rotation stop command to the rotating mechanisms 12 and 16 and sends a command to the polishing platen 2.
Then, the rotation of the polishing head 6 is stopped.
【００２１】こうすることにより、ロットの異なる複数
の基板間で成膜状態がそれぞれ相違していても、研磨さ
れる基板毎に研磨終了時点を正確に決定できるようにな
る。従って、従来のように研磨時間が足りなくて磁性体
層が露出しなかったり、研磨時間が長すぎて磁性体層を
所定量以上研磨してしまい、磁性体層の残膜厚が不足し
て形成された素子が所望の性能を発揮し得ない等の問題
を有効に防止させることができるようになる。This makes it possible to accurately determine the polishing end point for each substrate to be polished, even if the film formation state differs between a plurality of substrates of different lots. Therefore, the magnetic layer is not exposed because the polishing time is insufficient as in the prior art, or the polishing time is too long and the magnetic layer is polished by a predetermined amount or more, and the remaining film thickness of the magnetic layer is insufficient. Problems such as the inability of the formed element to exhibit desired performance can be effectively prevented.
【００２２】なお図示及び詳細な説明は省略するが、以
上のようにして形成された平坦化層３８上に、順次、Ｍ
Ｒ再生素子（磁気抵抗層）、上部シールド層、ライトギ
ャップ層を形成し、さらに、上部及び下部磁極層、薄膜
コイル等を形成する。その後、磁気抵抗層及びライトギ
ャップ層近傍の基板８側面を研磨して、磁気記録媒体に
対向するエアベアリング面（Ａｉｒ Ｂｅａｒｉｎｇ
Ｓｕｒｆａｃｅ：ＡＢＳ）を形成し、薄膜磁気ヘッドを
構成する素子が完成する。本発明は上記実施の形態に限
らず種々の変形が可能である。例えば、上記実施の形態
においては、分析／制御装置１８の制御系の記憶装置に
格納された所定値とスラリ廃液中に含まれる磁性体の量
とを比較して、研磨終了時点を決定するようにしてい
る。そしてこの所定値は、３μｍの膜厚に形成された下
部シールド層３２が被覆層３４から露出した後さらにＣ
ＭＰを行い、下部シールド層３２の膜厚が２μｍになる
ように値が設定されている。本発明はこれに限られず、
例えば上記実施の形態における下部シールド層３２の所
望の残膜厚が３μｍ近辺であれば、下部シールド層３２
の表面が露出した時点、つまりスラリ廃液中に含まれる
磁性体を感知した時点で研磨が終了するように所定値を
設定してももちろんよい。Although illustration and detailed description are omitted, M is sequentially formed on the flattening layer 38 formed as described above.
An R reproducing element (a magnetoresistive layer), an upper shield layer, a write gap layer are formed, and further, an upper and lower magnetic pole layer, a thin film coil and the like are formed. Thereafter, the side surface of the substrate 8 near the magnetoresistive layer and the write gap layer is polished to provide an air bearing surface (Air Bearing) facing the magnetic recording medium.
(Surface: ABS) is formed, and the element constituting the thin-film magnetic head is completed. The present invention is not limited to the above embodiment, and various modifications are possible. For example, in the above embodiment, the polishing end point is determined by comparing a predetermined value stored in the storage device of the control system of the analysis / control device 18 with the amount of the magnetic substance contained in the slurry waste liquid. I have to. After the lower shield layer 32 formed to a thickness of 3 μm is exposed from the covering layer 34, the predetermined value is further increased.
The value is set so that MP is performed and the film thickness of the lower shield layer 32 becomes 2 μm. The present invention is not limited to this,
For example, if the desired remaining film thickness of the lower shield layer 32 in the above embodiment is around 3 μm,
Of course, the predetermined value may be set so that the polishing is completed at the time when the surface is exposed, that is, when the magnetic substance contained in the slurry waste liquid is detected.
【００２３】[0023]
【発明の効果】以上の通り、本発明によれば、磁性体層
を被覆して埋め込んだ絶縁層を有する基板表面に対し
て、磁性体層が露出するまで研磨して基板表面を平坦化
させる際、研磨終了時点を容易且つ正確に検出して研磨
を終了させることができる。また本発明によれば、研磨
処理における研磨対象膜の残膜厚を所定膜厚に形成で
き、薄膜磁気ヘッドの製造において素子製造の量産性を
向上させることができるようになる。As described above, according to the present invention, the surface of the substrate having the insulating layer covered and embedded with the magnetic material layer is polished until the magnetic material layer is exposed, thereby flattening the substrate surface. At this time, the polishing end point can be easily and accurately detected to end the polishing. Further, according to the present invention, the remaining film thickness of the film to be polished in the polishing process can be formed to a predetermined film thickness, and the mass productivity of element production in the production of a thin-film magnetic head can be improved.
【図１】本発明の一実施の形態に用いられるＣＭＰ装置
の概略の構成を示す図である。FIG. 1 is a diagram showing a schematic configuration of a CMP apparatus used in an embodiment of the present invention.
【図２】本発明の一実施の形態に用いられるＣＭＰ装置
の概略の構成を示す断面図である。FIG. 2 is a sectional view showing a schematic configuration of a CMP apparatus used in one embodiment of the present invention.
【図３】本発明の一実施の形態による研磨方法及び薄膜
磁気ヘッドの製造方法を説明する図である。FIG. 3 is a diagram illustrating a polishing method and a method of manufacturing a thin-film magnetic head according to an embodiment of the present invention.
【図４】本発明の一実施の形態による研磨方法及び薄膜
磁気ヘッドの製造方法を説明する図である。FIG. 4 is a diagram illustrating a polishing method and a method of manufacturing a thin-film magnetic head according to an embodiment of the present invention.
１ ＣＭＰ装置 ２ 研磨定盤（プラテン） ４ 研磨パッド（研磨布） ６ 研磨ヘッド ８ 基板 １０ スラリ供給管 １２、１６ 回転機構 １４ ドレイン １８ 分析／制御装置 ２０、２２ パイプ ３０ 絶縁層 ３２ 下部シールド層 ３４ 被覆層 ３６ 埋め込み層 ３８ 平坦化層 DESCRIPTION OF SYMBOLS 1 CMP apparatus 2 Polishing platen (platen) 4 Polishing pad (polishing cloth) 6 Polishing head 8 Substrate 10 Slurry supply pipe 12, 16 Rotation mechanism 14 Drain 18 Analysis / control apparatus 20, 22 Pipe 30 Insulating layer 32 Lower shield layer 34 Coating layer 36 buried layer 38 planarization layer
───────────────────────────────────────────────────── フロントページの続き (72)発明者 堀中 雄大 東京都中央区日本橋一丁目13番１号 ティ ーディーケイ株式会社内 Ｆターム(参考） 3C034 AA13 AA17 CA30 CB03 DD20 3C058 AA07 AC02 BA09 BB01 BC02 CA04 DA16 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Yuta Horinaka 1-1-13 Nihonbashi, Chuo-ku, Tokyo TDC Corporation F term (reference) 3C034 AA13 AA17 CA30 CB03 DD20 3C058 AA07 AC02 BA09 BB01 BC02 CA04 DA16
Claims (5)
する基板表面を前記磁性体層が露出するまで研磨して、
前記基板表面を平坦化する研磨方法であって、 研磨の際に用いられた研磨剤の廃液の成分をほぼ実時間
で分析し、 前記廃液の成分の変化に基づいて前記研磨を終了させる
ことを特徴とする研磨方法。1. A substrate surface having an insulating layer covered and embedded with a magnetic material layer is polished until the magnetic material layer is exposed.
A polishing method for flattening the substrate surface, comprising analyzing a component of a waste liquid of an abrasive used in polishing substantially in real time, and terminating the polishing based on a change in a component of the waste liquid. Characteristic polishing method.
により前記廃液中に含まれる磁性体の量の変化に基づい
て決定することを特徴とする研磨方法。2. The polishing method according to claim 1, wherein the end point of the polishing is determined based on a change in an amount of a magnetic material contained in the waste liquid by polishing the magnetic material layer. A polishing method characterized by the above-mentioned.
て、 前記研磨として、化学的機械研磨が用いられることを特
徴とする研磨方法。3. The polishing method according to claim 1, wherein a chemical mechanical polishing is used as the polishing.
工程を有する薄膜磁気ヘッドの製造方法であって、 前記平坦化工程は、請求項１乃至３のいずれか１項に記
載の研磨方法を用いることを特徴とする薄膜磁気ヘッド
の製造方法。4. A method for manufacturing a thin-film magnetic head having a flattening step of polishing and flattening a surface of an object to be polished, wherein the flattening step is performed according to any one of claims 1 to 3. A method for manufacturing a thin-film magnetic head, comprising using a polishing method.
する基板表面を前記磁性体層が露出するまで研磨して、
前記基板表面を平坦化する研磨装置であって、 研磨の際に用いられた研磨剤の廃液の成分をほぼ実時間
で分析する分析手段と、 前記廃液の成分の変化に基づいて前記研磨を終了させる
制御手段とを有することを特徴とする研磨装置。5. A substrate surface having an insulating layer covered and embedded with a magnetic layer is polished until the magnetic layer is exposed.
A polishing apparatus for flattening the substrate surface, analyzing means for analyzing a component of a waste liquid of an abrasive used for polishing substantially in real time, and terminating the polishing based on a change in the component of the waste liquid. A polishing apparatus, comprising: a control unit for controlling the polishing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP551199A JP2000202768A (en) | 1999-01-12 | 1999-01-12 | Polishing method and device and manufacture of thin film magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP551199A JP2000202768A (en) | 1999-01-12 | 1999-01-12 | Polishing method and device and manufacture of thin film magnetic head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000202768A true JP2000202768A (en) | 2000-07-25 |
Family
ID=11613228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP551199A Pending JP2000202768A (en) | 1999-01-12 | 1999-01-12 | Polishing method and device and manufacture of thin film magnetic head |
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| Country | Link |
|---|---|
| JP (1) | JP2000202768A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100456091B1 (en) * | 2002-05-03 | 2004-11-08 | 한국과학기술연구원 | System for in-situ electrochemical monitoring of chemical mechanical planarization |
| JP2007520083A (en) * | 2004-01-26 | 2007-07-19 | ティービーダブリュ インダストリーズ，インコーポレーテッド | Chemical mechanical planarization process control using on-site conditioning process |
| US7914362B2 (en) | 2005-11-30 | 2011-03-29 | Hitachi Global Storage Technologies, Netherlands B.V. | Method of evaluating the quality of a lapping plate |
| US8047894B2 (en) | 2005-11-30 | 2011-11-01 | Hitachi Global Storage Technologies, Netherlands, B.V. | Apparatus for evaluating the quality of a lapping plate |
| WO2020235581A1 (en) * | 2019-05-22 | 2020-11-26 | 株式会社荏原製作所 | Substrate processing system |
| CN114683162A (en) * | 2020-12-29 | 2022-07-01 | 中芯集成电路（宁波）有限公司 | Planarization process method |
-
1999
- 1999-01-12 JP JP551199A patent/JP2000202768A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100456091B1 (en) * | 2002-05-03 | 2004-11-08 | 한국과학기술연구원 | System for in-situ electrochemical monitoring of chemical mechanical planarization |
| JP2007520083A (en) * | 2004-01-26 | 2007-07-19 | ティービーダブリュ インダストリーズ，インコーポレーテッド | Chemical mechanical planarization process control using on-site conditioning process |
| US7914362B2 (en) | 2005-11-30 | 2011-03-29 | Hitachi Global Storage Technologies, Netherlands B.V. | Method of evaluating the quality of a lapping plate |
| US8047894B2 (en) | 2005-11-30 | 2011-11-01 | Hitachi Global Storage Technologies, Netherlands, B.V. | Apparatus for evaluating the quality of a lapping plate |
| WO2020235581A1 (en) * | 2019-05-22 | 2020-11-26 | 株式会社荏原製作所 | Substrate processing system |
| CN113853275A (en) * | 2019-05-22 | 2021-12-28 | 株式会社荏原制作所 | Substrate processing system |
| CN113853275B (en) * | 2019-05-22 | 2023-08-29 | 株式会社荏原制作所 | Substrate processing system |
| CN114683162A (en) * | 2020-12-29 | 2022-07-01 | 中芯集成电路（宁波）有限公司 | Planarization process method |
| CN114683162B (en) * | 2020-12-29 | 2023-09-12 | 中芯集成电路（宁波）有限公司 | Planarization process method |
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