JP2000200768A - Semiconductor manufacturing equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the steam of a processing liquid evaporating from a wafer from being attached to the wafer again and being particles in a semiconductor manufacturing equipment, which is used as an etching device of a semiconductor wafer, by quickly discharging a large amount of steam generated when a wafer is picked up from a processing tank or by preventing the generation of the steam itself. SOLUTION: A semiconductor processing equipment has a processing tank 4 for receiving a processing liquid, a carrying unit for carrying a carrier 3 receiving a wafer 2 into the processing tank 4, a cover 7 arranged above the processing tank 4 and provided with an opening 9 for taking outside air at the top, a mechanism 6 for moving up and down the cover 7, and a unit 8 for discharging gas in the cover 7. Alternatively, the device has a processing tank, a cover arranged above the processing tank, a mechanism for moving the cover, and a mechanism for introducing inert gas heated into the cover.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus suitably used as an apparatus for etching a semiconductor wafer.

[0002]

2. Description of the Related Art Conventionally, when etching a semiconductor wafer having a nitride film formed thereon, as shown in FIG.
(0 to 160 ° C.) in a processing bath 4 containing phosphoric acid, and the lid 1 of the processing bath 4 is closed to perform an etching process. After the completion of the etching, the carrier 3 is pulled up from the processing tank 4, and the wafer 2 stored in the carrier 3 is transferred to the next washing tank by the transfer device 5 as it is and washed.

[0003]

In the prior art described above, the wafer pulled up from the processing tank containing the high-temperature phosphoric acid is directly put into the next washing tank to be washed with water. But,
In this method, when the wafer is lifted from the processing tank,
Phosphoric acid adhering to the wafer is vaporized upon contact with air at normal temperature and generates a large amount of vapor. This vapor re-adheres to the wafer and appears as particles on the wafer. The particles could not be removed in the next washing tank.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and a large amount of vapor generated when a wafer is lifted from a processing tank is quickly exhausted, and the generation of the vapor itself is prevented. It is an object of the present invention to provide a semiconductor manufacturing apparatus capable of preventing a vapor of a processing liquid evaporated from water from re-adhering to a wafer and appearing as particles.

[0005]

In order to achieve the above-mentioned object, the present invention provides, as a first invention, a processing tank containing a processing liquid and a carrier for transferring a carrier containing wafers into the processing tank. In a semiconductor manufacturing apparatus comprising: an enclosure installed above a processing tank, an upper part having an opening for taking in outside air, an enclosure vertical movement mechanism for moving the enclosure up and down, and gas in the enclosure. And an exhaust means for exhausting gas.

According to the first aspect of the present invention, when the carrier is lifted from the processing tank by the transporter, the enclosure above the processing tank is lowered by the enclosing vertical movement mechanism, and the carrier is inserted into the enclosure and the opening is opened. By discharging the vapor inside the enclosure from the exhaust port while introducing outside air into the enclosure, a large amount of vapor generated when the wafer is pulled up from the processing tank is quickly exhausted, and the chemicals evaporated from the wafer adhere to the wafer again. It can be prevented from appearing as particles.

According to a second aspect of the present invention, there is provided a semiconductor manufacturing apparatus comprising: a processing tank containing a processing liquid; and a transfer device for transferring a carrier containing a wafer into the processing tank. Semiconductor manufacturing, comprising: an enclosure installed above the enclosure, an enclosure vertical movement mechanism for moving the enclosure up and down, and a heating inert gas introduction mechanism for introducing heated inert gas into the enclosure. Provide equipment.

According to the second aspect of the present invention, as shown in an embodiment described later, when the carrier is lifted from the processing tank by the transporter, the enclosure above the processing tank is lowered by the up-down movement mechanism, and the carrier is placed inside the processing tank. Thus, a large amount of vapor generated when the wafer is lifted from the processing tank can be quickly exhausted to prevent chemicals evaporated from the wafer from re-adhering to the wafer and appearing as particles.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the first invention will be described with reference to FIG. The semiconductor manufacturing apparatus according to the present embodiment includes a processing tank 4 in which high-temperature (140 to 160 ° C.) phosphoric acid for etching a nitride film is contained, a transfer machine 5 for transferring a carrier 3 containing a wafer 2, An enclosure 7 having a substantially rectangular cylindrical shape installed above the enclosure 4 and an enclosure vertical movement mechanism 6 for vertically moving the enclosure 7 are provided. The enclosure 7 has an opening 9 at an upper end so that clean air can be taken into the inside, and the air taken in from the opening 9 is exhausted by an exhaust port 8 (exhaust means).

When etching a wafer on which a nitride film has been formed using the semiconductor manufacturing apparatus of this embodiment, first, the lid 1 of the processing tank 4 is opened, and the wafer 2 stored in the carrier 3 is transferred by the transfer machine 5 to the processing tank 4. After the wafer 2 is immersed in high-temperature phosphoric acid, the lid 1 of the processing tank 4 is closed. Thus, the wafer 2 placed in the processing bath 4 is etched by the high-temperature phosphoric acid.

After etching for a predetermined time, the treatment tank 4
Is opened, and the carrier 3 is pulled up by the transporter 5,
At the time of lifting, the enclosure 7 above the processing tank 4 is lowered by the enclosure vertical movement mechanism 6, and the carrier 3 is put into the enclosure 7. At this time, the carrier 3 and the wafer 2 pulled up from the processing tank 4 containing the high-temperature phosphoric acid generate a large amount of vapor because the attached phosphoric acid comes into contact with the room-temperature air and evaporates, but is connected to the enclosure 7. Vapor is efficiently exhausted by the exhaust port 8, and is removed without re-adhering to the wafer 2.

When the carrier 3 and the wafer 2 are cooled and no longer emit steam (usually 2 minutes to 10 minutes).
(When about minutes have passed), the enclosure 7 is raised by the enclosure vertical movement mechanism 6, and the carrier 3 is transferred to the next washing tank by the transporter 5 and washed.

According to this embodiment, when the carrier and the wafer are lifted out of the processing tank, the vapor of phosphoric acid evaporated from these can be prevented from re-adhering to the wafer.
It is possible to reduce adhesion of particles.

Next, an embodiment of the second invention will be described with reference to FIG. The semiconductor manufacturing apparatus according to the present embodiment includes a processing tank 4 in which high-temperature (140 to 160 ° C.) phosphoric acid for etching a nitride film is contained, a transfer machine 5 for transferring a carrier 3 containing a wafer 2, Enclosure 7 installed above 4
And an enclosure vertical movement mechanism (not shown) for moving the enclosure 7 up and down.
And A heating inert gas supply port 10 is provided on the upper wall of the enclosure 7, and a heating inert gas introduction mechanism 11 for introducing heated inert gas into the enclosure 7 is connected to the supply port 10. Have been.

When etching a wafer on which a nitride film has been formed using the semiconductor manufacturing apparatus of this embodiment, first, the lid 1 of the processing tank 4 is opened, and the wafer 2 stored in the carrier 3 is transferred by the transfer machine 5 to the processing tank 4. After the wafer 2 is immersed in high-temperature phosphoric acid, the lid 1 of the processing tank 4 is closed. Thus, the wafer 2 placed in the processing bath 4 is etched by the high-temperature phosphoric acid.

After etching for a predetermined time, the treatment tank 4
The cover 3 is opened and the carrier 3 is pulled up by the transfer device 5. When the carrier 3 is pulled up, the enclosure 7 above the processing tank 4 is lowered by an up-down movement mechanism, and the carrier 3 is put into the enclosure 7 and heated. The same temperature as phosphoric acid (140 to 160 ° C.) inside the enclosure 7 by the inert gas introduction mechanism 11.
A heated inert gas is introduced into the reactor. By making the temperature of the phosphoric acid substantially equal to the temperature in the enclosure 7 in this manner,
The vaporization of the phosphoric acid attached to the carrier 3 and the wafer 2 is prevented so that no vapor is generated.

After the phosphoric acid adhering to the carrier 3 and the wafer 2 is sufficiently dripped and dropped, the enclosure 7 is raised by an enclosure vertical movement mechanism, the enclosure 7 is raised by an enclosure vertical movement mechanism 6, and the carrier 3 Transfer to the next washing tank and wash with water.

According to this embodiment, when the carrier and the wafer are lifted up from the processing tank, it is possible to prevent vapor from being generated from the carrier and the wafer. Therefore, it is possible to reduce the adhesion of particles due to the phosphoric acid vapor. .

[0019]

As described above, according to the semiconductor manufacturing apparatus of the present invention, it is possible to prevent the vapor of the processing liquid evaporated from the wafer from adhering to the wafer and appearing as particles.

[Brief description of the drawings]

FIG. 1 is a schematic perspective view showing one embodiment of a semiconductor manufacturing apparatus according to the present invention.

FIG. 2 is a schematic perspective view showing another embodiment of the semiconductor manufacturing apparatus according to the present invention.

FIG. 3 shows a conventional semiconductor manufacturing apparatus (etching processing apparatus).
FIG. 3 is a schematic perspective view showing an example of FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Cover 2 Wafer 3 Carrier 4 Processing tank 5 Conveyor 6 Enclosure vertical movement mechanism 7 Enclosure 8 Exhaust port 9 Opening 10 Heating inert gas supply port 11 Heating inert gas introduction mechanism

Claims (2)

[Claims] An enclosure provided above a processing tank in a semiconductor manufacturing apparatus having a processing tank containing a processing liquid and a transfer device for transferring a carrier containing a wafer into the processing tank. And an enclosure having an opening at the top for taking in outside air, an enclosure vertical movement mechanism for moving the enclosure up and down, and exhaust means for discharging gas in the enclosure. 2. A semiconductor manufacturing apparatus comprising: a processing tank containing a processing liquid; and a transfer device for transferring a carrier containing a wafer into the processing tank, wherein an enclosure installed above the processing tank is provided. A semiconductor manufacturing apparatus, comprising: an enclosure vertical movement mechanism for moving the enclosure up and down; and a heated inert gas introduction mechanism for introducing heated inert gas into the enclosure.