JP2000200749A - Liquid treatment device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a liquid treatment device with which the uniformity of film thickness of treatment solution can be improved and the contamination of a substrate can be prevented. SOLUTION: The air, whose temperature is adjusted by a temperature controller 82, is purified by a filter 83, and the air is fed to the wafer W housed in a cup 60 from a chamber 80. An outer circumferential wall 88 is arranged outside the cup 60, and a flow passage 94 is formed between the outside of the cup 60 and the inside of the outer circumferential wall 88. As the clean air, having the temperature same as the air fed to the surface of the wafer is fed through the flow passage 94, the planar temperature distribution of the wafer W can be made more uniform than before. The backside of the wafer W is not contaminated.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a liquid processing apparatus for supplying a processing liquid to a substrate for processing.

[0002]

2. Description of the Related Art For example, in a photoresist processing step in a semiconductor manufacturing process, a resist liquid is applied to the surface of a substrate such as a semiconductor wafer (hereinafter, referred to as a "wafer") to form a resist film and a predetermined pattern is exposed. Thereafter, a developing solution is supplied to the wafer to perform a developing process. Such a series of processing is performed by a coating and developing processing apparatus individually provided with various processing apparatuses such as a heating processing apparatus for heating a wafer and a resist coating apparatus for coating and processing a resist liquid on the wafer. The transfer of the wafer to the apparatus is performed by a transfer device.

The coating and developing apparatus is installed in a clean room having a high degree of cleanliness so that various processing steps for a wafer can be performed in a clean atmosphere. Further, an air cleaning means such as an FFU (fan filter unit) is provided at an upper portion of the coating and developing processing apparatus, and clean air is discharged from the air cleaning means to a lower processing apparatus by downflow. Further, the downflow is adjusted to a suitable temperature and humidity in order to perform a suitable wafer processing in a resist coating apparatus or a developing processing apparatus that is sensitive to the influence of heat. With this configuration, clean air flows from the center of the wafer surface to the peripheral edge of the wafer by downflow in various processing apparatuses, and for example, the resist liquid generated on the wafer surface during the resist coating processing in the resist coating apparatus. Mist is discharged to the outside.

By the way, mist or the like generated during processing of a wafer may flow around to the back surface of the wafer due to the downflow, and it is necessary to supply air to the back surface of the wafer in order to discharge the mist or the like. is there. Therefore, conventionally, at the same time as the above-mentioned downflow, air is separately supplied to the back surface of the wafer so that air flows from the center of the back surface of the wafer toward the peripheral portion.

[0005]

However, the air supplied to the back surface of the wafer is different from the downflow described above, and is often not adjusted to a suitable temperature, such as air outside the cup. . Therefore, when air having different temperatures is supplied to the front and rear surfaces of the wafer when forming a resist film that is sensitive to temperature changes, the in-plane temperature distribution of the wafer varies, and the resist film thickness becomes uniform. There is a possibility that the property may be reduced.

[0006] The atmosphere outside the cup may be contaminated with particles or the like generated from a motor or a belt necessary for rotating the wafer. In such a case, there is a concern that the rear surface of the wafer is contaminated.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a new liquid processing apparatus capable of improving the uniformity of the thickness of a processing liquid as compared with the prior art and preventing contamination of a substrate. And

[0008]

According to a first aspect of the present invention, there is provided a liquid processing apparatus for supplying a processing liquid to a surface of a substrate for processing, wherein a temperature of the substrate is adjusted on the surface of the substrate. And a gas having a temperature substantially equal to the gas supplied to the front surface of the substrate is also supplied to the back surface of the substrate.

In the liquid processing apparatus according to the first aspect,
Since the temperature of the gas supplied to the front surface of the substrate is substantially equal to the temperature of the gas supplied to the rear surface of the substrate, the in-plane temperature distribution of the substrate to be processed becomes uniform. Therefore, the surface can be uniformly treated with the treatment liquid, and the film thickness uniformity of the treatment liquid is improved as compared with the conventional case.

According to a second aspect of the present invention, in the liquid processing apparatus of the first aspect, a flow path for guiding gas supplied to the front surface of the substrate to the back surface of the substrate is provided.

[0011] In the liquid processing apparatus according to the second aspect,
For example, a gas adjusted to a suitable temperature is supplied to the surface of the substrate, which is the surface on which devices are formed, and the same gas is supplied to both surfaces of the substrate in order to supply this gas to the back surface of the substrate through the flow path. A gas at a temperature is supplied. Therefore, the in-plane temperature distribution of the substrate to be processed becomes uniform. Further, since the gas supplied to the front surface of the substrate is cleaned by a filter or the like, by supplying this gas to the back surface of the substrate through the flow path, contamination of the back surface of the substrate can be prevented.

According to a third aspect of the present invention, in the liquid processing apparatus according to the second aspect, a storage container surrounding the substrate is provided, and an outer peripheral wall is disposed outside the storage container. Characterized in that the flow path is formed between them.

[0013] In the liquid processing apparatus according to the third aspect,
A gas having the same temperature as the gas supplied to the front surface of the substrate can be supplied to the back surface of the substrate through a flow path formed between the storage container and the outer peripheral wall.

According to a fourth aspect of the present invention, in the liquid processing apparatus according to the third aspect, the flow path is formed so as to communicate with the center of the back surface of the substrate from between the storage container and an outer peripheral wall. It is characterized by having.

In the liquid processing apparatus according to the fourth aspect,
Gas supplied to the front surface of the substrate is supplied to the center of the back surface of the substrate from between the container and the outer peripheral wall.

According to a fifth aspect of the present invention, in the liquid processing apparatus of the fourth aspect, a guide member for guiding a gas supplied to the center of the back surface of the substrate to the peripheral portion along the back surface of the substrate is provided. It is characterized by. According to the liquid processing apparatus of the fifth aspect, the gas supplied to the center of the back surface of the substrate is guided by the guide member and flows toward the periphery along the back surface of the substrate.

According to a sixth aspect of the present invention, in the liquid processing apparatus according to the third, fourth or fifth aspect, the outer peripheral wall is formed of a heat insulating wall for blocking heat transmission. In the liquid processing apparatus according to the sixth aspect, since the outer peripheral wall is formed by the heat insulating wall, the temperature of the outside does not influence.

According to a seventh aspect of the present invention, in the liquid processing apparatus according to the first aspect, there is provided a rotary support for holding and rotating the substrate. A liquid processing apparatus is provided, wherein a blade member for blowing gas to the back surface of the substrate is provided. In this case, the gas supply device may have a flow path for guiding gas supplied to the surface of the substrate to a space in which the blade member is arranged.

As described above, even when the blade member is provided on the member that rotates with the rotation of the rotation support table, a predetermined gas can be supplied to the back surface of the substrate, and is supplied to the front surface of the substrate. If the gas is introduced into the space where the blade member is arranged, the gas in the space is blown toward the back surface of the substrate by the rotation of the blade member.

Further, the treatment of the surface of the substrate with the treatment liquid is performed as follows.
Since the humidity is affected in addition to the temperature, the humidity of the air supplied to the surface of the substrate may be adjusted.

[0021]

Embodiments of the present invention will be described below. 1 to 3 are explanatory views of a coating and developing apparatus having a resist coating apparatus according to an embodiment of the present invention. FIG. 1 is a plan view, FIG. 2 is a front view, and FIG. 3 is a rear view. .

As shown in FIG. 1, the coating and developing apparatus 1
For example, a cassette station 2 for loading and unloading 25 wafers W from the outside to the coating and developing apparatus 1 in cassette units and loading and unloading wafers W to and from the cassette C, The wafer W is transferred between a processing station 3 in which various processing apparatuses for performing predetermined processing in a single-wafer manner are arranged in multiple stages and an exposure apparatus (not shown) provided adjacent to the processing station 3. And an interface unit 4 for the same.

In the cassette station 2, for example, each of four cassettes C is positioned at the position of the positioning protrusion 6 on the cassette mounting table 5 serving as a mounting portion in the X direction with the entrance of the wafer W toward the processing station 3 (see FIG. It can be placed in a line in the vertical direction. The wafer carrier 7 movable in the cassette arrangement direction (X direction) and the wafer arrangement direction of the wafers W accommodated in the cassette C (Z direction; vertical direction).
Are freely movable along the transport path 8 so that each cassette C can be selectively accessed.

The wafer carrier 7 is also configured to be rotatable in the θ direction (rotational direction about the Z axis). As will be described later, the multi-stage unit of the third processing unit group G3 on the processing station 3 side will be described later. Are configured to be able to access the alignment device 32 and the extension device 33 belonging to.

In the processing station 3, a main transfer device 13 provided with three tweezers 10, 11, and 12 for holding a wafer W is disposed at a central portion.
Various processing devices are arranged in multiple stages around 3 to form a processing device group. In the coating and developing apparatus 1, 5
One processing unit group G ₁ , G ₂ , G ₃ , G ₄ , G ₅ can be disposed, and the first and second processing unit groups G ₁ , G ₂ are disposed on the front side of the coating and developing processing unit 1. and, the third processing unit group G ₃ is disposed adjacent to the cassette station 2, the fourth processing unit group G ₄ are disposed adjacent to the interface section 4, a shown by the broken line processing unit group G ₅ 5 is disposed on the back side.

As shown in FIG. 2 in the first processing unit group G _1, 2 types of spinner type processing apparatus, for example, a resist coating unit for processing by applying a resist to the wafer W 15
And a developing processing apparatus 16 for supplying a developing solution to the wafer W for processing is arranged in two stages from the bottom. Similarly, for the second processing unit group G _2, the resist coating unit 17
And the development processing device 18 are stacked in two stages in order from the bottom.

As shown in FIG. 3, the third processing unit group G _3, the cooling unit 30 carries out the oven-type processing units, for example, a cooling process for performing predetermined processing put on the mounting table the wafer W, the resist and the wafer An adhesion device 31 for improving the fixability to W, an alignment device 32 for aligning the position of the wafer W, an extension device 33 for holding the wafer W on standby, prebaking devices 34 and 34 for performing a heating process before the exposure process, and a developing process Post-baking devices 35, 35, etc. for performing a subsequent heat treatment are stacked in, for example, eight stages from the bottom.

[0028] In the fourth processing unit group _{G 4,} for example, a cooling unit 40, an extension and cooling unit 41 to cool the wafer W mounted thereon, an extension unit 42, a cooling unit 43, the wafer W after the exposure processing
Exposure baking devices 44, 44, and post baking devices 45, 45, etc., which heat-treat the same, are stacked, for example, in eight stages from the bottom.

At the center of the interface section 4, a wafer carrier 50 is provided. This wafer carrier 50 is X
The first processing unit group is configured to freely move in the direction (vertical direction in FIG. 1), the Z direction (vertical direction), and rotate in the θ direction (rotation direction about the Z axis). G4
Extension device 42 and peripheral exposure device 5 belonging to
1. It is configured to be able to access an exposure apparatus (not shown).

As shown in FIGS. 4 and 5, in the coating and developing apparatus 1, a filter 52 is provided above the cassette station 2, a filter 53 is provided above the processing station 3, and
Filters 54 are attached to the upper part of the interface unit 4, respectively.
4 share an upper space 55. An air conditioner 5 capable of adjusting temperature and humidity outside or behind the coating and developing apparatus 1
6 is provided, and a pipe 57 is provided by the air conditioner 56.
Air is introduced into the upper space 55 through the filter, and the air is blown downward from the upper space 55 through each of the filters 52, 53, and 54. Is formed.

The coating and developing apparatus 1 is configured as described above. Next, the resist coating apparatuses 15 and 17 incorporated in the coating and developing apparatus 1 will be described. Since the resist coating devices 15 and 17 have basically the same configuration, the resist coating device 17 will be described.

As shown in FIGS. 5 and 6, the resist coating apparatus 17 includes a cup 60 for accommodating a wafer W in a casing 17a thereof, and a spin chuck for holding the wafer W in the cup 60 by vacuum suction. 61.
The spin chuck 61 is rotatable by a motor 65 provided below the cup 60. Cup 60
Has a first cylindrical body 62 located outside so as to wrap the outer periphery of the wafer W held by the spin chuck 61, and an exhaust port 64 is provided at the bottom of the cup 60. Also,
At an upper portion of the first cylindrical body 62, a protruding portion 62a protruding inward is formed. A second cylinder 63 is formed inside the first cylinder 62, and the second cylinder 63
A guide member 63a is formed below the wafer W and arranged in parallel with the back surface of the wafer W. The outer edge of the guide member 63a is located outside the tip of the protrusion 62a.

A nozzle holder 66 is provided above the cup 60. The nozzle holder 66 has a resist solution supply nozzle 67 for supplying a resist solution to the wafer W and a solvent for the resist solution (hereinafter referred to as a "solvent"). .) Are provided respectively.

The resist liquid supply nozzle 67 is supplied with a resist liquid from a resist liquid tank 69 provided outside through a resist liquid supply tube 70. A filter 71 is interposed in the resist liquid supply tube 70 on the way to remove impurities in the resist liquid. The supply of the resist solution is performed by, for example, a bellows pump 72, and a predetermined amount of the resist solution is discharged from the resist solution supply nozzle 67 to the wafer W. Nozzle holder 6
6 includes a forward path 70a and a return path 7 formed of a tube or the like through which a temperature control fluid such as water adjusted to a predetermined temperature circulates.
The resist solution flowing through the resist solution supply tube 70 is maintained at a constant temperature by flowing the temperature control fluid supplied from the outside through the outward route 70a to the return route 70b, and is discharged to the wafer W. The temperature of the resist solution is always set to a predetermined temperature.

The solvent supply nozzle 68 is configured to be supplied with a solvent from a solvent tank 73 for storing the solvent through a solvent supply tube 74.
A certain amount of solvent is supplied by a pump 75 or the like attached to the pump 4. Further, a forward path 74a and a return path 74, each of which is a tube through which a temperature control fluid flows, are provided.
The temperature control fluid is passed from the outward path 74a to the return path 74b so that the solvent flowing in the solvent supply tube 74 always has a predetermined temperature.

Incidentally, these resist liquid supply nozzles 6
7. A nozzle holder 66 having a solvent supply nozzle 68 is held by an arm 76, and the arm 76 is provided with a scanning mechanism 77.
Allows three-dimensional movement. Therefore, the nozzle holder 6
Numeral 6 can move between a standby position when the wafer W is not processed and a predetermined position when the wafer W is processed. The resist solution and the solvent discharged to the wafer W are discharged to a lower drain tank 78 through a drain pipe (not shown) provided at the bottom of the cup 60.

A chamber 80 is formed above the resist coating device 17, and the chamber 80 is connected to the air conditioner 56 via an air supply pipe 81 branched from the pipe 57. The air supply pipe 81 is provided with a temperature controller 82 for adjusting the temperature of the air flowing through the supply pipe 81 and a filter 83 for cleaning the air whose temperature has been adjusted by the temperature controller 82. With this configuration, when air is supplied to the chamber 80, the air is discharged from a discharge port (not shown) formed in the lower portion of the chamber 80, and is then provided in a lower portion of the resist coating device 17 or the like. The air is exhausted from the ventilation holes 85. The air blown down by the cassette station 2 or the like is also exhausted from the ventilation holes 85. After the air is collected at the exhaust port 86, the air is collected by the air conditioner 56 through the pipe 87. It is supposed to be.

Further, the resist coating apparatus 17 according to the present embodiment is provided with an outer peripheral wall 88 located outside the cup 60 and surrounding the cup 60. The outer peripheral wall 88 includes a third cylinder 89 located outside the first cylinder 62 of the cup 60 and a fourth cylinder 90 located inside the second cylinder 63 of the cup 60. When,
It has a bottom 91 connecting the lower portions of the third cylinder 89 and the fourth cylinder 90. The fourth cylinder 90 is arranged so as to surround the motor 65 of the spin chuck 61. The center of the back surface of the wafer W held by the spin chuck 61 passes from between the first cylinder 62 and the third cylinder 89 to between the second cylinder 63 and the fourth cylinder 90. Is formed.

The resist coating devices 15 and 17 are configured as described above. Next, the resist coating devices 15 and 17
The operation and effect of will be described.

The wafer W that has been subjected to the hydrophobic treatment in the adhesion device 31 is transferred to the cooling device 30 while being held by the tweezers 11 of the main transfer device 13 and subjected to a predetermined cooling process. The wafer W that has been subjected to the predetermined cooling processing in the cooling device 30 is transferred to the main transfer device 13.
Is transported to the resist coating device 17 while being held by the tweezers 11, and is attracted and held on the spin chuck 61 of the resist coating device 17 to rotate.

Next, a predetermined amount of solvent adjusted to a predetermined temperature is supplied from the solvent supply nozzle 68 to the rotating wafer W to diffuse the solvent on the wafer W, and then adjusted to a predetermined temperature from the resist liquid supply nozzle 67. A predetermined amount of the resist solution is applied to the rotating wafer W to form a resist film on the wafer W.

By the way, in order to form a resist film on the wafer W with a predetermined thickness, the in-plane temperature distribution of the wafer W must be uniform, but the resist coating apparatus 17 according to the present embodiment has the following requirements. Thus, the in-plane temperature distribution of the wafer W is made uniform.

That is, as shown in FIG. 6, the air adjusted to a predetermined temperature and cleaned is supplied from the chamber 80 to the cup 60.
Is supplied to the wafer W in the inside. Thus, the air discharged from the chamber 80 and supplied into the cup 60 is supplied to the surface of the wafer W, and flows from the center of the wafer W to the peripheral portion. Then, the air supplied to the surface of the wafer W passes through the inside of the first cylindrical body 62 and guides 63a.
And is exhausted after being guided to the exhaust port 64.

On the other hand, as shown in FIG. 7, a part of the air supplied from the chamber 80 does not enter the cup 60, and the flow formed between the first cylinder 62 and the third cylinder 89. Road 94
And supplied to the center of the back surface of the wafer W. The air supplied to the center of the back surface of the wafer W flows from the center of the wafer W to the peripheral portion along the guide member 63a parallel to the back surface of the wafer W, and is supplied to the front surface of the wafer W. At the same time, the air is guided to the exhaust port 64 while being detoured around the back side of the guide member 63a, and is exhausted. Thus, since the same air is supplied to the front surface of the wafer W and the back surface of the wafer W, the in-plane temperature distribution of the wafer W becomes more uniform than before.

Next, the wafer W on which a resist film having a predetermined thickness is uniformly formed is transferred to the pre-baking device 34 while being held by the tweezers 10 of the main transfer device 13. After a predetermined heating process is performed by the pre-baking device 34, the extension cooling device 41
It is carried in. The wafer W cooled to a predetermined temperature by the extension cooling device 41 is taken out by the wafer transfer body 50, and is sequentially transferred to the peripheral exposure device 51 and an exposure device (not shown).

As described above, in the resist coating apparatus 17 according to the present embodiment, since the same air is supplied to the front and back surfaces of the wafer W, the in-plane temperature distribution of the wafer More uniform. Therefore, the wafer W
Since the resist solution applied to the wafer W is uniformly diffused to the surface of the wafer W, the uniformity of the thickness of the formed resist film is improved as compared with the related art.

Further, since air adjusted to a suitable temperature flows around the cup 60, heat transfer between the inside of the cup 60 accommodating the wafer W and the outside of the cup 60 hardly occurs. Become. Therefore, the film thickness uniformity of the resist film formed on the wafer W is improved.

When the processing is performed by rotating the wafer W as in the present embodiment, since the rotation of the wafer W causes a negative pressure near the center of the rear surface of the wafer W, the wafer W flows through the flow path 94. The air is naturally guided to the back surface of the wafer W. Therefore, a blowing mechanism or the like for supplying air to the back surface of the wafer W becomes unnecessary, and the simplification and downsizing of the resist coating device 17 can be achieved.

Further, if the flow path 94 is provided separately from the motor 65 and the like, there is no possibility that dust and the like generated by the motor 65 and the like enter the flow path 94. Therefore, unlike the related art, the rear surface of the wafer W is not contaminated with dust, and the yield can be improved. Also, by arranging the fourth cylindrical body 90 so as to wrap the motor 65,
Even if dust is actually generated by the motor 65 or the like, the dust can be prevented from being blocked by the fourth cylindrical body 90 and mixed into the flow path 94, and contamination of the back surface of the wafer W can be prevented. It becomes possible.

The air that has flowed into the cup 60 bypasses the guide member 63a located outside the protruding portion 62a, so that an outward airflow is formed at the peripheral edge of the wafer W and flows into the cup 60. Air does not flow linearly toward the lower exhaust port 64. This makes it easier for the air supplied to the surface of the wafer W to flow from the center of the wafer W toward the peripheral edge.

In the resist coating unit 17, if the outer peripheral wall 88 is formed of a heat insulating material, the influence of heat generated outside the outer peripheral wall 88 does not reach the inside of the cup 60. Further, if the heat generated by the motor 65 is cut off by the outer peripheral wall 88, the heat is not transmitted to the inside of the cup 60, the temperature distribution in the surface of the wafer W is further uniformed, and the uniformity of the thickness of the formed resist film is uniform. Is further improved.

In the above embodiment, the air is guided to the back surface of the wafer W by the flow path 94. However, as shown in FIG. 8, the second cylindrical body 63 and the fourth cylindrical body A blade member 101 that rotates together with the spin chuck 60 may be provided above an air supply portion that is formed in an annular shape and formed by the air chuck 90.

That is, in the example of FIG. 8, a plurality of blade members 101 are attached to the outer peripheral portion of a spin chuck 60 as a rotation support table, and when the blade 101 is rotated by the rotation of the spin chuck 60, the blade member 101 is rotated. 101
Is blown toward the back surface of the wafer W. In the example of FIG.
Is just large enough to cover the annular air supply portion.
The air is evenly blown from the back surface to the peripheral edge of the device.

Therefore, the air flowing through the flow path 94, that is, the same air as the air supplied to the front surface of the wafer W is supplied to the back surface of the wafer W, so that the in-plane temperature of the wafer W is made uniform. Is possible. Moreover, the blade member 1
Since the air is supplied to the back surface of the wafer W by the rotation of No. 01, the guide member 63a as in the above embodiment is unnecessary. Further, since the spin chuck 61 is rotated by the rotation of the spin chuck 61, a separate dedicated rotation drive member is not required.

In the example shown in FIG. 8, the air supplied from the flow path 94 is blown by the blade member 101, but the air blown by the blade member 101 is, of course, supplied from such a special flow path 94. The invention is not limited to the example of introduction, but the point is that air having at least the same temperature as the air supplied to the surface of the wafer W is
Any structure may be used as long as it can blow air to the back surface of the wafer W.

In the above embodiment, the case where a resist film is formed on the wafer W by the resist coating device 17 has been described. However, the resist coating device 15 having the same configuration and function as the resist coating device 17 also has Similar resist application to W is possible. Also,
The present invention is not limited to the case where the resist film is formed by the resist coating devices 15 and 17, but is also applicable to, for example, the case of developing the wafer W in the developing devices 16 and 18.

Although the temperature of the air discharged from the chamber 80 is adjusted by the temperature controller 82, the uniformity of the thickness of the resist film depends on the change in humidity. The humidity may be adjusted together with the temperature of the air to be discharged. Then, the uniformity of the thickness of the resist film formed on the wafer W is further improved. Furthermore, although an example using a wafer W as a substrate has been described, the present invention is also applicable to a case where a processing liquid is supplied to another substrate such as an LCD substrate or a CD substrate.

[0058]

According to the first to ninth aspects of the present invention, the temperatures of the gas supplied to the front surface of the substrate and the temperature of the gas supplied to the rear surface of the substrate can be made equal, so that the in-plane temperature of the substrate to be processed can be improved. It is possible to make the distribution uniform. Therefore,
The uniformity of the film thickness of the processing liquid is improved, and the yield can be improved.

In particular, in the inventions according to claims 2 to 6, 8,
The clean gas originally supplied to the front surface of the substrate is also supplied to the back surface of the substrate through the flow path. Therefore, it is possible to prevent dust or the like generated by, for example, a motor or the like from being mixed into the gas supplied to the back surface of the substrate and contaminating the back surface of the substrate. Furthermore, according to the third to seventh aspects of the present invention, it is possible to prevent the back surface of the substrate from being contaminated by dust or the like generated outside the outer peripheral wall.

According to the fifth aspect of the present invention, the predetermined gas can more reliably reach the peripheral portion of the substrate through the guide member, so that the film thickness uniformity of the processing liquid is further improved.

According to the sixth aspect of the present invention, since the outer peripheral wall is formed by the heat insulating wall, the influence of the heat generated outside the container does not further affect the substrate inside the container. Therefore, the in-plane temperature distribution of the substrate becomes more uniform.

In the case of the seventh and eighth aspects, the gas having substantially the same temperature as the front surface is blown to the back surface of the substrate by the rotation of the blade member rotating with the rotation of the rotary support table. No dedicated rotation drive mechanism is required, and the device configuration is not complicated.

In the ninth aspect of the present invention, since the humidity which affects the change in the film thickness of the processing liquid is also adjusted, the film thickness uniformity of the processing liquid formed on the surface of the substrate is further improved. I do.

[Brief description of the drawings]

FIG. 1 is a plan view of a coating and developing apparatus having a resist coating apparatus according to an embodiment.

FIG. 2 is a front view of the coating and developing apparatus of FIG. 1;

FIG. 3 is a rear view of the coating and developing apparatus of FIG. 1;

FIG. 4 is an explanatory diagram of a flow of air in the coating and developing apparatus of FIG. 1;

FIG. 5 is an explanatory diagram of an air flow in a processing station of the coating and developing apparatus of FIG. 1;

FIG. 6 is an explanatory diagram of an air flow in the resist coating apparatus according to the embodiment of the present invention.

FIG. 7 is a cross-sectional view showing how air flows inside the cup of the resist coating apparatus of FIG. 6;

FIG. 8 is an explanatory view showing a configuration in which a blade member is attached to the outer periphery of a spin chuck.

[Explanation of symbols]

 Reference Signs List 1 coating / developing apparatus 3 processing station 15, 17 resist coating apparatus 56 air conditioner 60 cup 65 motor 80 chamber 88 outer peripheral wall C cassette W wafer

Claims (9)

[Claims] 1. A liquid processing apparatus for supplying a processing liquid to a surface of a substrate to perform processing, wherein a gas whose temperature is adjusted is supplied to the surface of the substrate, and the gas supplied to the surface of the substrate and the temperature are controlled. A liquid processing apparatus, wherein substantially the same gas is supplied to the back surface of the substrate. 2. The liquid processing apparatus according to claim 1, further comprising a flow path for guiding gas supplied to the front surface of the substrate to the back surface of the substrate. 3. A container for surrounding a substrate is provided, an outer peripheral wall is disposed outside the container, and the flow path is formed between the container and the outer peripheral wall. The liquid processing apparatus according to claim 2. 4. The liquid processing apparatus according to claim 3, wherein the flow path is formed so as to communicate with the center of the back surface of the substrate from between the storage container and an outer peripheral wall. 5. The liquid processing apparatus according to claim 4, further comprising a guide member for guiding a gas supplied to the center of the back surface of the substrate to a peripheral portion along the back surface of the substrate. 6. The liquid processing apparatus according to claim 3, wherein the outer peripheral wall is formed of a heat insulating wall that blocks heat transmission. 7. A rotating member for holding and rotating a substrate, wherein a member rotating with the rotation of the rotating member is provided with a blade member for blowing gas to the back surface of the substrate by rotation. The liquid processing apparatus according to claim 1, wherein: 8. The liquid processing apparatus according to claim 7, further comprising a flow path for guiding gas supplied to the surface of the substrate to a space in which the blade member is arranged. 9. The gas supplied to the surface of the substrate is:
3. The method according to claim 1, wherein the humidity is adjusted.
The liquid processing apparatus according to any one of 3, 4, 5, 6, 7 and 8.