JP2000195022A - Method of manufacturing thin film device, magneto- resistive head manufactured with this method and magnetic recording/reproducing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To attain high output with a high speed transfer rate by providing a thin film device such as a narrow gap magnetic head. SOLUTION: A magneto-resistive film 11 is laminated in the predetermined thickness, a high resistance film 12 is laminated thereon in the predetermined thickness, a first thin film 21 is laminated on the high resistance film 12, this thin film 21 is selectively etched to form a gap 22 in the predetermined interval, a second thin film is then laminated on the entire surface from the upper side of the thin film 21 including the gap and the first thin film 21 is laminated again thereon. Thereafter, the second thin film is removed by the etching process to form a mask 20 having the narrow gap corresponding to thickness of the second thin film. Using this mask 30, etching is performed to remove the high resistance film 12 and magneto-resistive film 11 in the width corresponding to the narrow gap. Thereby, a bias film 13 is formed within at least the narrow gap of the magneto-resistive film 11 and the electrode is laminated thereon to the entire surface and then etched to form the electrode layer 14.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a thin film device having a narrow gap, and more particularly to a method of manufacturing a thin film device which can be applied to increase the density of a magnetoresistive head and realize multi-layering. The present invention relates to a magnetoresistive head manufactured by this method, and also to a magnetic recording / reproducing apparatus equipped with this head.

[0002]

2. Description of the Related Art In recent years, in response to a demand for increasing the capacity of an external memory, for example, a hard disk drive (HDD-Hard Disk
The development for increasing the density and increasing the capacity of a magnetic recording medium such as a magnetic disk mounted on the Drive-) has been continued. In response to the increase in recording density on the recording medium side, the use of multiple magnetoresistive heads for reading information recorded on the recording medium has also become an important issue, and various attempts have been made. Further, for example, a large-capacity image information or the like can be recorded on a high-density magnetic recording medium. However, when such image information is transmitted and received, it takes a long time to read the information. Expectations have been raised for the development of a multi-layered magnetoresistive head capable of speeding up reading.

In order to meet such expectations, a planar type magnetic head which simultaneously realizes ultra-narrow traffic and multiple heads has been proposed as the most advanced development. An example of this is disclosed in, for example, Japanese Patent Application Laid-Open No. 9-305905 proposed by the present inventors. However,
Such a planar magnetic head has not yet been stably supplied at a low cost because of the yield and the like, and is actually a shield type MR head as shown in FIG.
(Magnetic Resistance) A multi-headed head has conventionally been used.

In FIG. 14A, a conventional shield type multi-head 1 is provided with a laminate 5 between a pair of shield members 2 and 3 with gaps 4 and 4 interposed therebetween. The laminate 5 has a configuration in which a permanent magnet 7 is interposed in the length direction between spin valves (SVs) 6 and 6 serving as magnetoresistive elements, and an extraction electrode 8 is attached to the permanent magnet 7. I have. The structure of the spin valve 6 is shown in FIG.
4 (b), the detailed configuration of the magnetoresistive film 6, the permanent magnet 7, and the extraction electrode 8 is shown in FIG.
4 (c).

However, such a conventional magnetoresistive head has a limit in improving the linear resolution for two reasons. For example, at the 40 Gbpsi level, the reproducing gap length between the upper and lower shields is about 60 nm, and when the thickness of the GMR element is reduced to 30 nm, 15 n on one side.
Since only an insulating film having a thickness of m can be arranged and an electrode having a thickness of 100 nm cannot be insulated with a high yield, there is a problem that it is difficult to narrow the gap to make the gap narrow.
In addition, the flying height of the magnetic head is already less than 30 nm even in the 4 Gbpsi class which is currently widely used, and the magnetic distance between the recording medium such as a magnetic disk and the magnetic head cannot be greatly reduced in the future. Then, the linear density elongation becomes saturated. Increasing the number of rotations of the disk can increase the information reading transfer rate, but this too cannot be expected to make a significant leap.

[0006] Therefore, in order to increase the transfer rate of information, multi-channeling has been required. Even in the case of multi-channel, for example, even at 4 Gbpsi, the track pitch is about 1.5, the track width of the read head is about 1 μm, and the vertical bias layer of the read head must be 0.5 μm or less. Will not be. Even if an attempt is made to multiply only the reproducing head, the distance in the track direction occupying one reproducing head becomes several μm or more due to the limit of the resolution of photolithography, and it is practically impossible to manufacture a multi-head with a narrow pitch. There was a problem of becoming. If one reproducing head is provided for every several tracks, a sufficient interval can be ensured, so that a multi-channel head can be formed. There is a problem that the pitch of the reproducing head and the pitch of the recording track are shifted from the peripheral side toward the outer peripheral side, so that reproduction becomes impossible.

As described above, even if an attempt is made to multiply the head, for example, the track pitch at 20 Gbpsi is 0.6
μm, and the track width of the reproducing head is 0.35 μm.
m. Resolution of I-line stepper is 0.2-0.3
μm, the width of the ablated vertical bias layer is set to 0.1 μm.
The limit is up to about 2 μm. About 0.1-0.2 μm in the vicinity of the ablated vertical bias layer is a dead layer and cannot be actually used. Therefore, the effective track width is “0.6 (track pitch) −
0.2 (vertical bias layer width)-0.1 (dead layer) * 2 =
0.2 ”μm. That is, track pitch 0.6
The reproduction track width is only 0.2 μm with respect to μm. Since the output of the magnetic disk drive is proportional to the track width, the output of the drive is greatly reduced. Therefore, if the multiplication is to be performed by providing the head corresponding to the adjacent track, the effective reproduction track width must be extremely narrow.

When the flying height of the head becomes 40 Gbpsi, the problem becomes more serious. The track pitch is about 0.4 μm, about 0.4 μm, and the track width of the reproducing head is about 0.3 μm. However, assuming that the width of each of the vertical bias layer and the electrode of the reproducing head is 0.2 μm from the limit of the resolution of photolithography,
Since an insensitive sensor area of about 0.1 μm is formed adjacent to both sides of the vertical bias layer, the substantial reproduction track width is:
“0.4 (track pitch) −0.2 (vertical bias layer width) −0.1 (dead layer) * 2 = 0” μm, and the output becomes 0.

That is, the arrangement limit is to arrange the electrodes and the magnetoresistive element at a pitch twice as large as the resolution limit of the photolithography, but both ends of the magnetoresistive element are insensitive. Therefore, it is substantially impossible to form a multi-head having a narrow pitch of about 0.4 μm. Further, even if a multi-head can be formed with a narrow pitch, there is a problem that the resistance of the lead portion of the electrode is increased because the width of the electrode is reduced with the narrow pitch of the head. Will remain.

Also, when a hard film or a soft magnetic layer exchange-coupled by antiferromagnetism is used for the longitudinal bias layer,
As the width of the vertical bias layer becomes smaller, the demagnetizing field at the edge becomes larger, and the problem occurs that the magnetization of the soft magnetic layer near the edge is tilted. The width at which the magnetization of the soft magnetic layer tilts near the edge of the permanent magnet is represented by “Ms * t /
It is determined by “Hc” or “Ms ′ * t ′ / Hua”, but its width is about 10 to 50 nm. When the width of the vertical bias layer becomes 0.5 μm or less, it becomes a serious problem. Here, Ms and Ms ′ are the magnetizations of the soft magnetic layer exchange-coupled by the permanent magnet and the antiferromagnetic film, respectively.
t and t ′ are the thickness of the soft magnetic layer exchange-coupled to the permanent magnet by the antiferromagnetic film, and Hc and Hua are the coercive force of the permanent magnet and the exchange coupling magnetic field of the antiferromagnetic film.

[0011]

As described above, since a conventional semiconductor device such as an MR head is manufactured by using, for example, photolithography, a semiconductor device such as a vertical bias layer for partitioning a permanent magnet is used. It is difficult to manufacture an extremely narrow gap with a semiconductor, and although there is room for higher density on a magnetic disk as a magnetic recording medium, multiple heads are required on the magnetic head side for reading recorded information. There was a problem that it was difficult to increase the transfer speed because it was impossible.

SUMMARY OF THE INVENTION The present invention has been made in order to solve the above-mentioned problems of the conventional MR head, and provides a method of manufacturing a thin film device capable of manufacturing a narrow gap. It is an object of the present invention to provide a fast and high-output magnetoresistive head and a magnetic recording / reproducing apparatus equipped with the head.

[0013]

In order to achieve the above object, a method of manufacturing a thin film device according to the present invention is a method of manufacturing a thin film device having at least a narrow gap, and includes a magnetoresistive effect having a magnetoresistive effect characteristic. A process of laminating a film with a predetermined thickness, a process of laminating a high-resistance film having a high electrical resistance on the magnetoresistive film with a predetermined thickness, and a process of laminating the magnetoresistive film and A first thin film is stacked on the high-resistance film, and the first thin film is selectively etched to form a gap at a predetermined interval. After laminating the second thin film and laminating the first thin film again thereon, the upper surface is planarized, and then the second thin film existing between the first thin films is removed by etching. Suitable for thin film thickness A process for manufacturing a narrow gap mask having a narrow gap, and performing etching under predetermined conditions using the narrow gap mask to remove the high resistance film and the magnetoresistive film with a width corresponding to the narrow gap. A process of forming a narrow gap also in the magnetoresistive film and the high-resistance film, and forming a bias film in at least the narrow gap of the magnetoresistive film,
By depositing an electrode film over the entire surface from the upper side of the high-resistance film where the narrow gap was formed and etching the electrode film, electrode portions were left on both sides above the narrow gap of the high-resistance film. And a process of forming an extraction electrode layer.

In a method of manufacturing a thin film device according to the present invention, the thin film device having the above-mentioned basic feature is characterized in that the thin film device having a narrow gap is formed by a magnetoresistive head in which a number of individual heads are repeatedly formed. It is characterized by being constituted.

Further, a magnetoresistive head according to the present invention has a plurality of magnetoresistive films, a plurality of vertical bias layers disposed at both ends thereof, and a plurality of electrodes for extracting a change in resistance of the magnetoresistive film. A process of laminating a magnetoresistive film having a magnetoresistive effect characteristic with a predetermined thickness, and forming a high-resistivity film having a high electric resistance on the magnetoresistive film with a predetermined thickness. A laminating process, laminating a first thin film on the laminated magnetoresistive film and the high-resistance film, and selectively etching the first thin film to form a gap at a predetermined interval; After laminating a second thin film over the entire surface of the first thin film including the gap and laminating the first thin film again from above, the upper surface is flattened, and then the second thin film existing between the first thin films is formed. Etch 2 thin film Wherein by removing by grayed second
A process of manufacturing a narrow gap mask having a narrow gap corresponding to the film thickness of the thin film, and etching the high resistance film and the magnetoresistive film into the narrow gap by performing etching under predetermined conditions using the narrow gap mask. A process of forming a narrow gap also in the magnetoresistive film and the high-resistance film by removing with a corresponding width, and forming a bias film at least in a narrow gap of the magnetoresistive film, and forming the narrow gap. By stacking an electrode film over the entire surface from the upper side of the high resistance film and etching the electrode film, a lead electrode layer having electrode portions left on both sides above the narrow gap of the high resistance film is formed. The second basic feature is that the device is manufactured through the following process.

The magnetoresistive head according to the present invention has the second basic feature, wherein the magnetoresistive film has a plurality of magnetic films arranged in the longitudinal direction with the narrow gap interposed therebetween. Wherein the bias layer is a plurality of individual bias layers formed in the narrow gap at both ends of the individual magnetoresistive film, and the bias layer is formed on the individual magnetoresistive film. A plurality of individual insulating films having the same width and length as the high resistance film are provided,
It is characterized in that a plurality of individual extraction electrode layers are provided from between two individual insulating films adjacent to each other on the individual bias layer to over respective ends.

Further, a magnetoresistive head according to the present invention has the second basic feature, wherein the magnetoresistive film and the high-resistivity film left through the gap and the narrow gap And the width of the narrow gap formed by using the narrow gap mask has an order of 0.05 to 0.1 μm.

Further, the magnetic recording / reproducing apparatus according to the present invention comprises:
A magnetic recording medium on which a high-density recording area is formed, an information recording / reproducing system including a magnetic head for writing information to the magnetic recording medium and reading information from the medium by utilizing a magnetoresistance effect; Wherein the magnetic head comprises: a process of laminating a magnetoresistive film having a magnetoresistive effect to a predetermined thickness; and forming a high-resistivity film having an electrically high resistance on the magnetoresistive effect film by a predetermined process. Stacking a first thin film on the stacked magnetoresistive film and the high resistance film,
The first thin film is selectively etched to form a gap at a predetermined interval, a second thin film is stacked over the entire surface of the first thin film including the gap, and the first thin film is again formed thereon. After laminating the thin films, the upper surface is flattened, and then the second thin film existing between the first thin films is removed by etching, thereby forming a narrow gap mask having a narrow gap corresponding to the thickness of the second thin film. And performing etching under predetermined conditions using the narrow gap mask to remove the high resistance film and the magnetoresistive film at a width corresponding to the narrow gap. A process of forming a narrow gap also in a film, and forming a bias film at least in a narrow gap of the magnetoresistive effect film, and an upper portion of the high resistance film in which the narrow gap is formed. A process of forming an extraction electrode layer having electrode portions left on both sides above the narrow gap of the high-resistance film by etching and stacking an electrode film over the entire surface of the high-resistance film. A third basic feature is to have a multi-structure.

Further, the magnetic recording / reproducing apparatus according to the present invention comprises:
In the apparatus having the third basic feature, the information recording / reproducing system includes a plurality of magnetic heads for simultaneously reproducing information, a storage unit for storing information reproduced by the plurality of magnetic heads, and a storage unit. And processing means for rearranging the information reproduced by the plurality of stored magnetic heads and reconstructing the information as original information.

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of a method for manufacturing a thin film device such as a magnetoresistive head according to the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a manufacturing process diagram showing a method for manufacturing a thin film device according to a first embodiment of the present invention. In FIG. 1, a magnetoresistive head is shown as an example of the thin film device.

As shown in FIG. 1, the method for manufacturing a thin film device according to the first embodiment is applied to a method for manufacturing a magnetoresistive head having at least a narrow gap. First, a basic manufacturing process will be described with reference to FIG.
In the first process, as shown in FIG. 1A, for example, a magnetoresistive film 11 having a magnetoresistive effect such as MR, GMR, TMR or the like is laminated at a predetermined thickness while being regulated at a predetermined depth. . In the next process, as shown in FIG. 1B, a semiconductor insulating film 12 made of a semiconductor oxidized or nitrided to a predetermined thickness on the magnetoresistive effect film 11 is formed.
Are laminated. In the first embodiment, a semiconductor insulating film is used as an example. However, in the present invention, this process is not limited to a semiconductor insulating film as long as it is a high resistance effect film, and may be a metal insulating film such as an oxidized metal film. Any material may be used as long as it is a high-resistance film having high electrical resistance even if it is not an insulating film.

In the process shown in FIG. 1B, a narrow gap mask 20 is formed on the semiconductor insulating film 12 as a high resistance film. This narrow gap mask 20
Will be described with reference to FIG. First, a tantalum (Ta) film as a first thin film is formed on the upper surface of the semiconductor insulating film 12 to a thickness of about 0.2 μm,
After the resist using photolithography such as (Photolithographic Engraving Process), RIE (Reactive I
A tantalum film 21 having a gap 22 with a length of 1.0 μm and a gap of 1.2 μm is formed by on-etching (reactive ion etching).

Next, a tantalum film 21 as a first thin film
Then, a silicon film 23 as a second thin film is laminated with a thickness of 0.1 μm from the upper side of the wide gap 22, and a tantalum film 21 as a first thin film is laminated thereon again.
FIG. 2B shows this state. The upper surface of the tantalum film 21 laminated on the upper side is recessed so as to follow the groove shape of the wide gap 22 and is not a flat surface. The resin coat 24 is laminated with a polymer having a small molecular weight or the like in order to level out and flatten the depression. This state is shown in FIG.
It is shown in (c). Note that the thickness of the silicon film 23 corresponds to the gap in the narrow gap portion of the narrow gap mask 22.

Next, the resin coat 24 and the tantalum film 21 as the first thin film laminated on the upper side are removed by etching back by RIE or the like to form a second thin film as shown in FIG. The surface of the silicon film 23 is exposed, and the exposed surface of the upper tantalum film 21 stacked in the gap 22 is made to reach the boundary surface of the lower tantalum film 21 with the silicon film 23.

Finally, the width of the tantalum film 21 is 1 μm and the gap width is 0.1 μm by performing, for example, CDE (Chemical Dry Etching) at an etching rate such that the tantalum film 21 is not removed and only the silicon film is removed.
Is formed. This state is shown in FIG.
FIG. 1B shows the state at the time when the narrow gap mask 20 is completed.

Thereafter, as shown in FIG. 1C, when etching is performed using the narrow gap mask 20 as a mask, a gap corresponding to the narrow gap 25 of the mask 20 is formed in the magnetoresistive film 11 and the semiconductor insulating film 12. 11A and 12A are formed. Next, with the narrow gap mask 20 still coated on the magnetoresistive effect film 11 and the semiconductor insulating film 12, cobalt-platinum (Co-P
When the bias film 13 is formed by stacking t), a state as shown in FIG. 1D is obtained.

Here, by lifting off the tantalum film 21 forming the narrow gap mask 20, the bias film 13 laminated on the tantalum film 21 is also removed together. The bias film 13 is interposed in the form of a repetitive pattern in 11A, and the semiconductor insulating film 12 is laminated on the magnetoresistive effect film 11.

At this time, the magnetoresistive film in the slit portion may be removed by etching to form an abutted junction between the magnetoresistive film and the vertical bias layer / electrode. In this case, the electrode and the vertical bias layer may be patterned by photolithography using a photoresist having a width of about 0.2 μm.

Next, FIG. 1E shows a structure in which gold (Au) is laminated from above and a metal electrode layer 14 serving as an extraction electrode layer is formed. When the metal electrode layer 14 is etched so as to expose only the inside of the semiconductor insulating film 12 in this state, as shown in FIG. 1F, the metal electrode layer 14 covers the edge of the insulating film 2 from the upper side of the vertical bias film 13. The separated extraction electrode 14 left is formed.

The magnetoresistive head manufactured by the method of manufacturing a semiconductor device according to the first embodiment has the structure shown in FIG. In FIG. 1, a magnetic head 10 includes a substrate 15 made of alumina, titanium, carbon or the like, a base layer 16 made of aluminum oxide or the like stacked thereon, and a reproduction shield layer 17 made of nickel, ferrite or the like stacked thereon. And a lower gap layer 18 of aluminum oxide or the like provided thereon, on which the magnetoresistive element manufactured by the process of FIG. 1 is provided. The part of the magnetoresistive element includes a plurality of magnetoresistive films 11, also called spin valves (SV), and a PM (Permanent Magnet).
Also referred to as a plurality of longitudinal bias layers 13 disposed between the plurality of magnetoresistive effect films 11, and between the silicon insulating films 12 adjacent above the longitudinal bias layers 13, the edges of the insulating films 12 are removed. And an extraction electrode layer 14 provided thereon.

With the above configuration, as shown in FIG. 3, if one pitch between the spin valve and the PM is 0.6 μm, the width of the PM can be 0.05 μm, and the width of the spin valve alone is 0.55 μm, so that even if an effective magnetoresistance effect cannot be obtained near the boundary with the vertical bias layer 13 in the spin valve, at least a sufficient magnetoresistance effect can be obtained inside the 0.35 μm width on the center side. become. Thus, the narrow slit width is 0.05μ
m or less, so that the track pit is not more than 0.1 m.
Even at 6 μm, the effective reproduction track width is set to “0.6-0.0
5-0.1 (dead layer) * 2 = 0.35 "μm. In the magnetoresistive film head shown in FIG. 3, the electrode has a larger cross-sectional area at a distance from the element by the thickness of the insulating film 12 (2 nm or less), and the resistance of this thin portion is made of a tantalum (Ta) material. Even in this case, it can be greatly reduced to about 0.4 ohm.

As described above, by using the insulating film having the narrow slit, even if the track pitch (0.4 μm in the case of the first embodiment) is twice as large as the limit of the resolution of the photolithography, the magnetic field can be reduced. Resistance effect film 11
Can be greatly increased as compared with the width of the vertical bias layer 13, so that even if the dead portions at both ends of the magnetoresistive film 11 are each 0.1 μm, it is necessary to secure a wide magneto-sensitive area. And a multi-head with a narrow pitch can be realized.
Also, since the electrode can be made wider on the insulating film,
The cross-sectional area of the electrode at a position separated from the magnetoresistive effect element by the thickness of the insulating film (2 nm or less) can be increased.

The magnetoresistive head manufactured as described above can be applied to a double-sided shield type reproducing head according to the second embodiment as shown in FIGS. In the read head according to the second embodiment, the magnetoresistive element according to the first embodiment is provided between the lower read shield layer 17 and the upper read shield layer 19 via the lower read gap 18 and the upper read gap 9. Is inserted. The configuration of the magnetoresistive effect element is the same as the configuration of the head according to the first embodiment, and the manufacturing method thereof is the same as that of the first embodiment, and thus redundant description will be omitted. FIG. 5 is a perspective view showing the lower shield 17 and the magnetoresistive element of the double-sided shield type reproducing head according to the second embodiment.

The application of the magnetoresistive head according to the present invention is not limited to the double-sided shield type reproducing head according to the second embodiment, but is also applicable to a single-sided shield type MR head as shown in FIG. It is possible. FIG. 6 shows a one-sided shield type MR head according to the third embodiment of the present invention. The configuration is basically the same as that according to the first embodiment shown in FIG. . The spin valve described above and other GMR elements can be used for such a magnetoresistive element. Although the recording heads also have different pitches, by integrally forming the recording head with a multi-layered recording head, it is possible to increase the speed not only during reproduction but also during recording. As an advantage of the multi-head configuration as in the present invention, when transmission in the gigahertz (GHz) band becomes necessary without transmission of ultra-high frequency using a single transmission line, the transmission is multiplied into one transmission line. Lowering the transmission frequency of the line can greatly reduce the total cost.

In order to reproduce one piece of information at a high speed, it is advantageous to record information related to the recording at a predetermined unit in an adjacent track. For example, if you want to play back 10 frames of recorded information at high speed,
The information to be recorded is divided into 10 frames, and the information for each of the divided 10 frames is recorded on an adjacent track. At the time of reproduction, reproduction is performed using a multi-layered head, and the reproduced information is rearranged in the original order and composited, whereby it is possible to duplicate the original information.

In the above description, only the reproducing head has been described. However, although the pitch is different, the present invention can be applied to a recording head. By integrating not only the reproducing head but also the multi-layered recording head, it is possible to realize high speed not only at the time of reproducing but also at the time of recording. The advantage of such multi-multiplexing is that it is not necessary to transmit an ultra-high frequency signal by one line, and if transmission of a signal in the GHz band becomes necessary, multi-heads are used. By lowering the transmission frequency of the transmission line, the total cost can be drastically reduced.

In the above embodiment, the vertical bias layer 13 formed using the narrow gap mask is described as being provided only in the gap of the magnetoresistive film, but the present invention is not limited to this. Vertical bias layer 13
May be formed to cover the insulating film 12 from the inner wall to both edges. A method for manufacturing a thin film device according to the fourth embodiment having such a configuration will be described with reference to FIG. In the description of FIG. 7, components that are the same as or correspond to those in FIG. 1 are given the same reference numerals, and redundant description is omitted.

First, in FIG. 7A, as an initial process, the magnetoresistive film 11 is laminated with a predetermined thickness and a predetermined depth. Next, a semiconductor insulating film 12 having a predetermined thickness is formed on the magnetoresistive effect film 11 using oxide or silicon nitride. Thereafter, as shown in FIG. 7B, a narrow gap mask 20 made of a tantalum (Ta) film is formed. The process of forming the narrow gap film 20 may be performed by the same process as the method of manufacturing the thin film device according to the first embodiment described with reference to FIG. Next, using this narrow gap mask 20, narrow gaps 11A and 12A are formed in the magnetoresistive film 11 and the semiconductor insulating film 12, respectively, as shown in FIG.

Next, as shown in FIG. 7D, the narrow gap mask 20 formed of a tantalum film or the like is removed by etching. This step is different from the first embodiment. Next, the bias layer 13 is formed of cobalt-platinum (Co-Pt) or the like. At this time, FIG.
As shown in FIG.
A bias layer is formed so as to fill the entire gap so as to become the vertical bias film 13, and the gap 1 of the semiconductor insulating film 12 is formed.
A bias layer is formed entirely so as to cover the upper surface from the side wall of 2A.

Next, as shown in FIG.
An electrode layer 14 serving as an extraction electrode is laminated by the above process. Finally, as shown in FIG. 7 (g), a portion from the narrow gaps 11A and 12A to the edge of the insulating film 12 by, for example, milling in an argon gas. The electrode layer 14 and the bias layer 13 other than those of the insulating film 12 are removed.
A magnetoresistive head is formed as a thin-film device in which a vertical bias film 13 is also formed on the side wall.

FIG. 8 is an enlarged view of the magnetic head according to the fourth embodiment thus formed. As shown in FIG. 8, as a variation of the actual junction portion, the vertical bias film 13 and the electrode 14 have a shape corresponding to the groove shape of the narrow gaps 11A and 12A. Only is formed to have a depth corresponding to the thickness of the magnetoresistive film 11 below the gap.

Although the resistance state is greatly different, as in the fifth embodiment shown in FIG.
The electrode 1 has the same width as the vertical bias film 13 only on the tip side of the electrode 1, and extends farther than the predetermined depth of the magnetoresistive film 11.
It is also possible to form the electrodes 14 such that the width of 4 is somewhat wider. In this case, the predetermined depth of the magnetoresistive film 11 is about 0.5 μm as shown in the figure.

In the magnetoresistive film head according to the first embodiment shown in FIG. 3, the electrode has a large cross-sectional area at a distance from the element by the thickness of the insulating film 12 (2 nm or less). Although the resistance of the thin portion could be significantly reduced to about 0.4 ohms even if tantalum (Ta) material was used as the electrode, in the magnetoresistive head according to the fifth embodiment shown in FIG. 2 if the invention is not applied
Since it is about 04 ohms, the use of the present invention makes it possible to greatly reduce the heat generated by Joule heat in this portion, thereby achieving a great improvement in reliability and an improvement in the signal-to-noise (SN) ratio.

In each of the magnetic heads according to the first to fifth embodiments described above, the magnetoresistive film 11 and the insulating film 12 have been described as being the same in the length direction. However, as in the magnetic head according to the sixth embodiment shown in FIG. 10, the length of the insulating film is made somewhat shorter than that of the magnetoresistive effect film 11 and the electrode is reduced by the length of the insulating film. 14 may be formed wide.

Further, in the above-described embodiment, the narrow gap mask has only the configuration in which the first thin film is left. However, the present invention is not limited to this, and the narrow gap mask is a mask in which the second thin film is left. There may be. In the method of manufacturing a thin film device according to the seventh embodiment, an example of which is shown in FIG. 11, the manufacturing process of a mask using a thin film is different from that of the first to sixth embodiments.

First, referring to FIG.
The 0A manufacturing process will be described. In FIG. 11, the processes (a) to (c) are the same as the manufacturing process of the narrow gap mask 20 of the first embodiment described with reference to FIG. That is, a tantalum (Ta) film is formed as a first thin film with a thickness of about 0.2 μm on the upper surface of the semiconductor insulating film 12 as a high resistance film, and after a resist using photolithography such as PEP is formed. By performing etching by RIE, a tantalum film 21 having a gap 22 with a length of 1.0 μm and a gap of 1.2 μm is formed as shown in FIG.

Next, as shown in FIG. 11B, a tantalum film 21 as a first thin film and a silicon film 23 as a second thin film from the upper side of the wide gap 22 have a thickness of 0.1 mm.
Then, a tantalum film 21 as a first thin film is again stacked thereon. The upper surface of the tantalum film 21 stacked on the upper side is recessed so as to follow the groove shape of the wide gap 22 and is not a flat surface. As shown in FIG. 11 (c), a resin coat 24 made of a polymer having a small molecular weight or the like is laminated to level and flatten the depression. In the first embodiment shown in FIG. 2, the thickness of the silicon film 23 corresponds to the gap in the narrow gap portion of the narrow gap mask 22, but in the seventh embodiment, the thickness of the second thin film is Length between silicon 23 of about 1μ
The gap from which tantalum, which is the first thin film of m, is removed becomes the gap in the narrow gap portion of the narrow gap mask 22A.

Next, by devising an etching gas, the resin coating 24 and the tantalum film 21 as the first thin film laminated on the upper side, and the portion of the silicon as the second thin film extending in the horizontal direction are formed. Are removed by etching back by RIE or the like, and as shown in FIG.
The silicon film 23 as the second thin film remains in the U-shape in the tantalum film 21 as the first thin film, and the surface is made flat. Next, as shown in FIG. 11E, etching such as CDE is performed at an etching rate such that only tantalum is removed.
As shown in (f), only the bottom portion of the silicon remaining in the U-shape is removed to form a narrow gap mask 20A having gaps 25 at substantially equal intervals.

The method of manufacturing a narrow gap mask for a thin film device according to the seventh embodiment can be modified by a procedure such as feathering. That is, first, an insulating film pattern such as a silicon oxide (SiOx) film is formed, a silicon film or the like is formed, and then an insulating film such as SiOx is formed. Next, a flattening layer is coated and flattened until the silicon film is exposed, and then the silicon film is selectively processed by CDE or RIE, whereby a narrow slit can be formed between the insulating films.

Instead of this manufacturing method, FIB (Focuse
d Ion Beam etching) can also be used to form a mask having a narrow slit of 0.1 μm. This FI
Since B is also a wafer process, it can be processed by automatic feed with a constant processing pitch, and the processing area is small, so that a sufficient throughput can be secured. In the above process, if tantalum (Ta) or silicon oxide (SiOx) is selectively etched before selectively processing the silicon film, a residual (projection) pattern which cannot be performed by photolithography may be formed. Can also. These manufacturing methods are not limited to the field of the magnetoresistive head, and can be applied particularly to the formation of a narrow pattern having a narrow pitch.
Further, the present invention is applicable to various thin film devices having such a narrow pitch and narrow pattern.

According to the method for manufacturing a thin film device according to the seventh embodiment, a thin film device as shown in FIGS. 1 and 7 is manufactured using a narrow gap mask manufactured by the manufacturing process shown in FIG. Accordingly, a thin film device of a type different from those of the embodiments can be manufactured.

A thin film device such as a magnetoresistive film head manufactured by the method for manufacturing a thin film device according to the first to seventh embodiments is mounted on a magnetic disk device as shown in FIG. Become. A magnetic disk device 30 as a magnetic recording / reproducing device according to the eighth embodiment shown in FIG. 12 has a magnetic recording medium in which a high-density recording area is formed in a space formed by a housing 31 and a lid 32. It is constituted by providing a magnetic disk 33 and an information recording / reproducing system (not shown) including a magnetic head 35 for writing information to the magnetic recording medium and reading information from the medium by a magnetoresistance effect. I have.
The magnetic disk 33 is rotated at a high speed by a rotation drive mechanism such as a spindle motor 34.

The magnetic head 35 is a multi-resistive high-resistance effect type head according to the present invention, and is shown in FIG. 12 by increasing the density of continuous formation of individual heads to about 10,000. As described above, the length that covers the entire recording surface of the magnetic disk 33 is maintained so that the seek hardly needs to be performed. The magnetic head 35 is supported at a predetermined position by a support arm 36. Magnetic head 3 mounted on magnetic recording / reproducing apparatus having such a configuration
5 is manufactured by a manufacturing process as shown in FIGS.

That is, specifically, a process of laminating a magnetoresistive film having a magnetoresistive effect to a predetermined thickness, and a method of forming a high-resistivity film having an electrically high resistance on the magnetoresistive film by a predetermined thickness. A process of stacking according to thickness, and a first process on the stacked magnetoresistive film and the high-resistance film.
The first thin film is selectively etched to form a gap at a predetermined interval, and a second thin film is stacked from the upper side to the entire surface of the first thin film including the gap. After laminating the first thin film again from above, the upper surface is flattened, and then the second thin film existing between the first thin films is removed by etching, thereby forming a narrow film corresponding to the thickness of the second thin film. A process of manufacturing a narrow gap mask having a gap, and etching under a predetermined condition using the narrow gap mask to remove the high-resistance film and the magnetoresistive effect film at a width corresponding to the narrow gap, and A process of forming a narrow gap also in each of the resistance effect film and the high resistance film; and forming a bias film at least in the narrow gap of the magnetoresistive effect film and before forming the narrow gap. A process in which an electrode film is stacked over the entire surface from the upper side of the high-resistance film and etched to form a lead electrode layer in which electrode portions are left on both sides above the narrow gap of the high-resistance film above the narrow gap. , And a multi-layered configuration.

The magnetic recording / reproducing apparatus according to the eighth embodiment shown in FIG. 12 is provided with a multiplicity of magnetic heads and covers the entire recording surface of the magnetic disk with one unit. However, the present invention is not limited to this, and may be configured as a magnetic recording / reproducing apparatus according to the ninth embodiment shown in FIG.

In FIG. 13, the magnetic disk device as a magnetic recording / reproducing device according to the ninth embodiment has a basic configuration shown in FIG. , A support arm 38 for supporting the recording head 37 at the position
Arm 44 for supporting the reproduction heads 41 to 43 of FIG.
And a recording signal processing system 39 for writing recording information on the recording surface of the magnetic disk 33 by the recording head 37, and a reproduction signal for reading the information recorded on the recording surface of the magnetic disk 33. A processing system 50 is provided.

The information signal reproducing system 50 includes the plurality of magnetic heads 41 to 43 for simultaneously reproducing information, storage means 51 to 53 for storing information reproduced by the plurality of magnetic heads 41 to 43, and storage means. A plurality of magnetic heads 41 to 43 stored by 51 to 53
And a processing unit 54 for rearranging the information reproduced by the above and reconstructing it as the original information.

The magnetic recording / reproducing apparatus according to the ninth embodiment differs from the magnetic recording / reproducing apparatus of the eighth embodiment in that the magnetic head 3
5 can be avoided by increasing the number of storage means 5 to one unit.
The cost is devoted to a signal processing system that reorders and reconstructs the reproduction information sequentially transmitted from the storage units 1 to 53 and the plurality of storage units 51 to 53 by the processing unit 54 based on, for example, address information. . The reproducing magnetic heads 41 to 43 used in the magnetic recording / reproducing apparatus according to the ninth embodiment are each equipped with a multi-head manufactured according to the present invention, and perform recording after adjusting the respective seek ranges. By sharing and reading the information signal, it is possible to greatly shorten the signal reading time and dramatically increase the information reproducing speed.

[0059]

As described above in detail, according to the method of manufacturing a thin film device according to the present invention, a bias in a narrow gap is formed by using a narrow gap mask formed by a first thin film and a second thin film. Since the width in which an effective signal potential can be obtained can be increased by forming a layer, the reading speed and the transfer speed when reproducing recorded information can be increased, and a high output can be maintained. According to a magnetic recording / reproducing apparatus equipped with an MR magnetic head, information recorded on a high-density magnetic information recording medium can be read at high speed.

[Brief description of the drawings]

FIG. 1 is a schematic process diagram showing a manufacturing process of a method for manufacturing a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a process chart showing a manufacturing process of a narrow gap mask as a main part in the method of manufacturing a semiconductor device according to the first embodiment of the present invention.

FIG. 3 is a sectional perspective view showing a main part of a magnetic head manufactured according to the first embodiment of the present invention.

FIG. 4 is a sectional view showing a double-sided shield type magnetic head according to a second embodiment of the present invention.

FIG. 5 is a perspective view showing a magnetic head according to a second embodiment of the invention.

FIG. 6 is a cross-sectional view showing a one-sided seal and its magnetic head according to a third embodiment of the present invention.

FIG. 7 is a process chart showing a manufacturing process of a thin film device according to a fourth embodiment of the present invention.

FIG. 8 is a perspective view showing a main configuration of an MR head according to a fourth embodiment of the present invention.

FIG. 9 is a perspective view showing a main part configuration of an MR head according to a fifth embodiment of the present invention.

FIG. 10 is a perspective view showing a main configuration of an MR head according to a sixth embodiment of the present invention.

FIG. 11 is a process chart showing a manufacturing process of a narrow gap mask in a method of manufacturing a thin film device according to a seventh embodiment of the present invention.

FIG. 12 is a schematic perspective view showing a main part of a magnetic disk device as a magnetic recording / reproducing device according to an eighth embodiment of the present invention.

FIG. 13 is a perspective view showing a magnetic disk device as a magnetic recording and reproducing device according to a ninth embodiment of the present invention.

14A is a sectional view showing the entirety of a conventional MR head, FIG. 14B is a sectional view of a main part, and FIG. 14C is a perspective view of a main part.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 11 Magnetoresistive film 12 High resistance film 13 Narrow gap bias layer 14 Electrode layer 20, 20A Narrow gap mask 21 First thin film 23 Second thin film 25 Narrow gap 30, 40 Magnetic recording / reproducing device 33 Magnetic recording medium 35, 41 , 42, 43 playback head 50 playback signal processing system 51, 52, 53 storage means 54 processing means

 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Masashi Sabashi 72 Horikawa-cho, Saiwai-ku, Kawasaki-shi, Kanagawa F-term in Toshiba Kawasaki Office (reference) 5D034 BA02 BA04 BA08 BA15 BB02 BB11 DA05 DA07

Claims (7)

[Claims] 1. A method of manufacturing a thin film device having at least a narrow gap, comprising: a process of laminating a magnetoresistive film having a magnetoresistive effect to a predetermined thickness; Stacking a high-resistance film having a predetermined thickness with a predetermined thickness; stacking a first thin film on the stacked magneto-resistance effect film and the high-resistance film, and selectively etching the first thin film Then, a gap is formed at a predetermined interval, a second thin film is stacked over the entire surface of the first thin film including the gap, and the first thin film is stacked again on the second thin film. Forming a narrow gap mask having a narrow gap corresponding to the thickness of the second thin film by etching and removing the second thin film present between the first thin films. The high-resistance film and the magneto-resistance effect film are etched under a predetermined condition using a mask, and the high-resistance film and the magneto-resistance effect film are removed at a width corresponding to the narrow gap, thereby forming a narrow gap in the magneto-resistance effect film and the high-resistance film, respectively. Forming a bias film at least in a narrow gap of the magnetoresistive film, laminating an electrode film over the entire surface from the upper side of the high resistance film in which the narrow gap is formed, and etching the electrode film. Forming a lead electrode layer having electrode portions left on both sides above a narrow gap of a high-resistance film above the gap. 2. The method according to claim 1, wherein said thin-film device having a narrow gap comprises a magnetoresistive head in which a number of individual heads are repeatedly formed. 3. A magnetoresistive head comprising: a plurality of magnetoresistive films; a plurality of longitudinal bias layers disposed at both ends thereof; and a plurality of electrodes for extracting a change in resistance of the magnetoresistive film. A process of laminating a magnetoresistive film having a resistance effect characteristic with a predetermined thickness, and a process of laminating a high resistance film having a high electrical resistance on the magnetoresistive film with a predetermined thickness. A first thin film is stacked on the magnetoresistive film and the high-resistance film, and the first thin film is selectively etched to form a gap at a predetermined interval. After laminating a second thin film over the entire surface from the upper side of the thin film and laminating the first thin film again from above, the upper surface is flattened, and then the second thin film existing between the first thin films is etched. By removing A process of manufacturing a narrow gap mask having a narrow gap corresponding to the thickness of the second thin film; and etching the high resistance film and the magnetoresistive film by performing etching under predetermined conditions using the narrow gap mask. Forming a narrow gap also in the magnetoresistive film and the high-resistance film by removing with a width corresponding to the narrow gap; and forming a bias film in at least a narrow gap of the magnetoresistive film, An electrode film is formed by laminating an electrode film over the entire surface from the upper side of the high resistance film on which is formed and etching the electrode film so that electrode portions are left on both sides above the narrow gap of the high resistance film above the gap. A magnetoresistive head manufactured through a process of forming a film; 4. The magneto-resistance effect film is a plurality of individual magneto-resistance effect films arranged in the longitudinal direction with the narrow gap interposed therebetween, and the bias layer is formed at both ends of the individual magneto-resistance effect film. A plurality of individual bias layers formed in the gap; a plurality of individual insulating films having the same width and length as the film are provided as the high resistance film on the individual magnetoresistive film; 4. The magnetoresistive effect type according to claim 3, wherein a plurality of individual extraction electrode layers are provided from between two adjacent individual insulating films on the bias layer to over respective ends. head. 5. A narrow gap formed by using a narrow gap mask, wherein a ratio of a width of the narrow gap to a magnetoresistive effect film and a high resistance film left through the gap is 10: 1. 4. The magnetoresistive head according to claim 3, wherein the width of the gap has an order of 0.05 to 0.1 [mu] m. 6. A magnetic recording medium in which a high-density recording area is formed, and an information signal reproducing system including a magnetic head for reading recorded information from the magnetic recording medium by utilizing a magnetoresistance effect. In the magnetic recording / reproducing apparatus, the magnetic head includes a process of laminating a magnetoresistive film having a magnetoresistive effect with a predetermined thickness, and a high-resistive film having an electrically high resistance on the magnetoresistive film. A process of laminating to a predetermined thickness, laminating a first thin film on the laminated magnetoresistive film and the high resistance film, and selectively etching the first thin film at a predetermined interval. A gap is formed, a second thin film is stacked over the entire surface of the first thin film including the gap, the first thin film is stacked again from above, the upper surface is planarized, and then the first thin film is formed. Exists between thin films A process of manufacturing a narrow gap mask having a narrow gap corresponding to the thickness of the second thin film by etching and removing the second thin film, and etching under a predetermined condition using the narrow gap mask. Performing a process of removing the high-resistance film and the magneto-resistance effect film with a width corresponding to the narrow gap to form a narrow gap also in the magneto-resistance effect film and the high-resistance film. A bias film is formed in the narrow gap, and an electrode film is laminated from the upper side of the high resistance film in which the narrow gap is formed, and is etched. A process of forming an extraction electrode layer having electrode portions left on both upper sides, and a multi-layered structure manufactured by the process. Magnetic recording and reproducing apparatus according to claim. 7. The information signal reproducing system comprises: a plurality of magnetic heads for simultaneously reproducing information; a storage unit for storing information reproduced by the plurality of magnetic heads; and a plurality of magnetic heads stored by the storage unit. Processing means for rearranging the information reproduced by the head and reconstructing it as the original information;
The magnetic recording / reproducing apparatus according to claim 6, further comprising: