JP2000188434A - Piezoelectric element and its processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a processing tool and a processing method for the processing of electronic materials such as a piezoelectric element, silicon or gallium arsenic or the like and the other substances. SOLUTION: A crystal plate 13 obtained from electronic materials such as a crystal plate 13 or silicon or gallium arsenic or the like through the polishing process with a both-side polishing machine, or a single-side polishing machine or the other polishing machine is then subjected to chemical etching from the single side or both sides to eliminate the element in amount of several tens of μm or so. Thereafter, the polishing process is conducted again in the amount of several μm generated by chemical etching process such as RIE (Reactive Ion Etching) with the both-side polishing machine, single-side polishing machine, float polishing machine or the other polishing machine. Thereafter, the final etching process such as RIE process is conducted from both sides. Accordingly, an electronic material as thin as 14 μm having the diameter, for example, of 2 inches and high accuracy can be produced.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to barium titanate, quartz, lithium niobate or potassium niobate used for an acceleration sensor or an angular velocity sensor.
Processing tools for processing other single crystals or piezoelectric elements such as piezoelectric ceramics or other ceramics, or silicon, gallium arsenide, or other electronic materials, optical lenses, or other substances, and the processing thereof About the method.

[0002]

2. Description of the Related Art Quartz resonators, which are a type of piezoelectric element, are used for clock generation of microcomputers for general-purpose computers, OA information equipment, and home appliances, as well as oscillation sources of the reference frequency of communication equipment and measurement equipment. Although it is diverse,
In order to improve the performance of information processing and transmission, it is required to reduce the thickness of a vibrator and increase its natural vibration frequency. In order to obtain a high-quality vibrator, it has been proposed to finish it into a lens shape, and it has been used in a relatively low frequency range.

[0003] However, as a problem in reducing the thickness of the vibrator, the production method using a double-sided lapping machine currently has a production limit of 24.0 µm (= 70 MHz). Also, when the vibrator is finished in a lens shape, it is very difficult to create a curved surface on a thin section, and there has been no example manufactured so far.

[0004]

SUMMARY OF THE INVENTION An object of the present invention is to provide an electronic material, a piezoelectric element, and a method for processing the same, which are thinner than the conventional manufacturing difficulties. .

[0005]

In order to solve the above-mentioned problems, a method of processing a piezoelectric element according to the present invention is directed to a method of manufacturing a piezoelectric element, comprising: In, to form a groove or a step of a ring shape or a square shape or other shape, and a little higher than the depth of the groove or the step, a cylindrical or other shape, glass or,
A second working aid made of super steel or iron or other material is fitted into the groove or the step, and the second working aid protrudes from the upper surface of the first working aid. The same as the height, or slightly lower than the protruding height, or high disk-shaped or other shape, the piezoelectric element polished object is installed, the piezoelectric element polished object, on the lower surface, the lower An extremely thin workpiece is polished by using two upper and lower wrapping plates of an upper wrapping plate on the lapping plate and the first processing aid.

[0006] As a method of fixing the first processing aid to the disk-shaped or other object to be polished, a circular shape formed on the upper surface of the first processing aid, or another method. A liquid of a viscous substance (for example, a substance such as a surfactant) is put into a groove or a step having a shape of the above, and the piezoelectric element to be polished so that the periphery of the lower surface of the piezoelectric element to be polished adheres to the liquid. By placing on the first processing aid and using the surface tension of the liquid or by freezing,
On the upper surface of the first processing aid, placed, on the hydrophilic thin plate impregnated with water, place the object to be polished piezoelectric element,
Using the surface tension of water included in the hydrophilic thin plate, or forming a plurality of holes in the first processing aid, syrup, honey, an adhesive bond or grease in the holes. A method of filling the lower surface of the object to be polished with the viscous substance by filling the viscous substance or another adhesive (for example, a rubber-based adhesive) can be adopted. The object to be polished is placed on the processing aid or is adsorbed using a vacuum attraction force. Further, the first processing aid, which is made of glass or super steel or iron or other metal, and the second processing aid,
Processing aids, rosin, starch paste or other adhesives,
Or it can be fixed using vacuum suction power,
In some cases, it may not be necessary to use it fixedly.

In the piezoelectric element of the present invention, a pressure receiving surface made of a material having a piezoelectric effect, such as quartz, barium titanate, lithium niobate, or other ceramics, is formed at the center of the cylinder. A pair of electrodes is formed on the pressure receiving surface. The cylinder and the pressure receiving surface can be made of an integral material having a piezoelectric effect.

Further, the method for processing a piezoelectric element according to the present invention comprises:
Made of a material having a piezoelectric effect, from both ends of the round bar, respectively, using a grinding means, punch a cylindrical hole, at the center of the round bar, to form a pressure receiving surface of a predetermined thickness, the A pair of electrodes is provided on the pressure receiving surface to convert external air vibration into an amplified electric signal.
The grinding means forms a groove on the surface of the barrel-shaped grindstone, and by injecting compressed air or liquid into the groove, the grindstone is rotated, or using other mechanical means,
The barrel-shaped whetstone may be rotated. A barrel-shaped grindstone can also be formed using a steel ball close to a true sphere.

[0009]

Embodiments of the present invention will be described below. The present inventor has developed a new processing method classified as a grinding method, and has a 9 μm-thick uniconvex lens shape (Pl).
(ano-convex type) Quartz vibrator was successfully manufactured. Further, for the purpose of improving the performance of the crystal resonator, the relationship between the thickness and the electrical characteristics of the resonator having a thickness of 500 μm or less was investigated.

[0010] Since quartz is a hard and brittle material, it has been considered that applicable processing methods are limited to mechanical lapping or chemical etching. Therefore, the grinding method is hardly used for processing the high frequency crystal resonator.

As shown in FIG. 1, the grinding method developed by the present inventor is a method using a ball grinding stone 1 in which diamond abrasive grains are electrodeposited on steel balls. That is, a quartz plate 4 is attached on a cylindrical magnet 3 attached to a main shaft 2 of an ultra-precision lathe, and a tool holder 6 provided with a seat on which a ball rides is attached to a tip of a grinding spindle 5. When this is brought close to the cylindrical magnet 3, the steel ball is attracted and held by the tool holder 6 by magnetic induction. Since the tool holder 6 is smaller than the diameter of the cylindrical magnet 3, the magnetic flux density is smaller than that between the ball grinding wheel 1 and the cylindrical magnet 3.
The space between the ball grinding wheel 1 and the tool holder 6 is larger. For this reason, the ball grindstone 1 is strongly sucked into the tool holder 6, and does not come off even when rotated at a high speed, and is strongly integrated.

The steel balls are electrodeposited and fixed with diamond abrasive grains to form the ball grinding stone 1. Since the steel balls are held by the magnetic force in the cylindrical tool holder 6, they are easily formed. The whetstone can be replaced. Moreover, since the steel balls are held by using the cylindrical tool holder 6 and the high-precision steel balls, the work of centering the grindstone 1 which is necessary at the time of replacement is unnecessary. It has a feature that the ball grindstone 1 used for the rough processing and the finishing processing can be quickly replaced. Since the movement of the ball grinding wheel 1 is controlled by the NC device, a curved surface can be created. Ball whetstone 1 made of steel balls for use in ball bearings, etc.
The diameter of the diamond abrasive grains 57 to be electrodeposited and fixed is, for example, 30 μm used for rough machining, 16 μm used for medium finishing, and 4 μm used for finishing. In the case of, the diameters of the ball grinding stones 1 are different from each other by the diameter of the diamond abrasive grains 57. If the diameters of the diamond abrasive grains 57 are different,
When the ball grinding stone 1 is attracted to and held by the cylindrical tool holder 6 using the magnetic induction of the cylindrical magnet 3 on the main shaft 2 side, the diameter of the diamond abrasive grains 57 differs by the amount corresponding to each other. The center point of the ball grindstone 1 held by the tool holder 6 by magnetic force moves in the vertical direction. As a solution to this problem, as shown in FIG. 1B, the ball whetstone 1 is held by the tool holder 6.
If only the area of the holding portion 56 of the ball grindstone 1 is not fixed to the diamond grindstone 57 by electrodeposition and the ball grindstone 1 is used, as shown in FIG. Regardless of the thickness, the center axes of the vertical and horizontal χ and γ axes, particularly the vertical χ axis of the ball grinding wheel 1 are always fixed, so that the ball grinding wheel 1 for rough finishing can be used.
Even if the ball grinding stone 1 for the intermediate finishing and the ball grinding stone 1 for the finishing are exchanged for the ball grinding stone 1 for the finishing, respectively, χ, γ
As shown in FIG. 1C, the axis does not always change, so that the replacement of the ball grindstone 1 is facilitated.

The present inventor has used this processing method to obtain FIG.
As shown in (a), the Plano-convex type processing in which the holding portion 51 and the groove 52 were integrally formed was successfully performed. The curve connecting the holding portion 51 and the groove 52 is called a smooth line 53. As shown in FIG. 2 (b), the shape of the quartz crystal disk was ground at 25 μm.
The lens shape has a radius of curvature of 3 mm and a shape error of 0.1 μm or less. Heretofore, it has been considered that a crystal resonator having this shape is likely to be accompanied by sub-vibration, and cannot exhibit sufficient performance. However, as is apparent from FIG. 2C, the reactance frequency characteristic draws a sharp resonance curve and does not involve any sub-vibration, so that it is understood that it is almost ideal as a crystal resonator.

An attempt was made to produce a thinner crystal resonator, and a crystal resonator having a thickness of 9 μm and a radius of curvature of 200 mm was successfully processed. The surface was further removed by about 0.5 μm by polishing with cerium oxide, and as a result, FIG.
An element as shown in (a) was obtained. As shown in FIG. 3B, the reactance frequency characteristics of the resonance curve lack a little sharpness, suggesting that Q is slightly smaller than that of the crystal resonator of FIG. Is not accompanied at all. As a cause of the lack of sharpness of the resonance curve, it is expected that damage due to processing is inherent below the surface of the crystal unit, and the thickness of the crystal unit is reduced,
This is probably because the ratio of the thickness of the damaged layer was relatively increased. However, the characteristics can be improved by removing the damaged layer by an etching method.

Next, under the condition that the radius of curvature of the Plano-convex type is 30 mm and the thickness of the lens portion is
Tried to increase. Until it reaches a thickness of 125 μm
A sharp resonance curve without secondary vibration similar to FIG. 2 was maintained. However, beyond that, a phenomenon appeared with accompanying or no vibration.

On the other hand, as shown in FIG. 4 (a), the thickness of the vibrating portion is 27 μm in a planar shape (Inverted m).
esa type) was also manufactured. P with similar resonance frequency
Compared to the lan-convex type, as shown in FIG. 4B, it can be seen that although the electrical characteristics are somewhat inferior, there is no accompanying secondary vibration. Further Inverted Mesa
When the thickness of the flat part of the mold is increased, the thickness becomes 30 μm
Beyond, a phenomenon that did not cause vibration appeared. Inv
In the erted mesa type, the radius of curvature of the lens portion is
It is considered to be an infinite Plano-convex type, and it can be said that this type of crystal resonator having a ring support has a region exhibiting good vibration characteristics and a region which cannot vibrate due to the thickness and curvature of the vibrating portion.

The following conclusions have been obtained by the method of the present invention. Until now, it has been considered that a favorable quartz-crystal vibrator without a sub-vibration cannot be obtained unless the shape is a Bi-convex type. However, even in the Plano-convex type, when a ring support is provided and the thickness is reduced to about 30 μm,
It has been found that a crystal resonator having ideal reactance frequency characteristics without secondary vibration can be obtained.

As described above, a result is obtained in which the performance of the quartz resonator can be expected to be improved in a thin region. But,
It was also found that when the thickness exceeds 125 μm, sub-vibration occurs or the vibration stops. FIG. 2 (a)
And a concave lens type shape (Invert) shown in FIG. 4A.
ed mesa type shape), a certain thickness,
And if it is polished to a certain radius of curvature, Pla
no-Convex type shape, and from the back surface forming a concave lens type shape, plasma etching, or chemical etching means, single-side polishing machine, or double-side polishing machine, or other polishing processing means, or Used alone, the back of Plano-Convex type shape,
Or, by processing or polishing the back surface of the concave lens shape, to the utmost, extremely thin, Plano-Convex
Polishing of the mold shape and the concave lens shape can be performed.

The present inventor has been studying a processing method for reducing the thickness of the crystal unit as much as possible. 5 and 6 show that the diameter and thickness of the polish point are 5 mm, 76.7 μm and 10 mm, respectively.
FIG. 9 shows a reactance frequency characteristic in the case of 0 μm. According to this, it is understood that the sub-vibration exists near the frequency of the main vibration. FIG. 7 shows the reactance frequency characteristics of a crystal resonator having a thickness of 33 μm.
No sub-vibration exists in the frequency range of 5 MHz.
As shown in FIG. 8, a complicated sub-vibration is observed in a frequency region separated by about 6 MHz. FIG. 9 shows that the thickness is 31 μm.
This shows the reactance frequency characteristics of the crystal resonator of the above. There is no sub-vibration in the ± 5 MHz region of the main vibration. However, as shown in FIG. , About 8 MHz apart. From this, it can be seen that the sub-vibration departs from the frequency of the main vibration as the thickness of the crystal resonator decreases.

FIGS. 11 to 19 show an apparatus for processing an ultra-thin quartz resonator. In this processing equipment,
As shown in FIG. 11, on the upper surface of the first processing aid 11,
A groove or step 12 having a ring shape or a square shape or another shape is formed, and as shown in FIG. 12, a cylindrical shape or a slightly higher depth than the depth of the ring or other shape groove or step 12 is formed. A second processing aid 19 having a shape is fitted therein, and as shown in FIG.
The second processing aid 19 is fitted into the inside of the disk-shaped member, and a disk-shaped or slightly higher or slightly higher than the projection height (for example, 40 μm) from the first processing auxiliary tool 11 or A piezoelectric element to be polished in another shape, in this example, a quartz plate 13 is provided. Further, as another processing order, the following is more preferable because the distortion generated at the stage of processing the quartz plate 13 is corrected. Before placing the quartz plate 13 on the first processing aid 11, as a pretreatment, a metal such as gold or silver or aluminum is vapor-deposited on one surface of the quartz plate 13, After forming a metal coating on one side of the plate 13 or using other means, the one side of the quartz plate 13 is subjected to a surface treatment so that the front and back surfaces of the quartz plate 13 can be distinguished. For example,
When an extremely thin metal coating is formed, the crystal plate 13 is placed on the first processing aid 11 with the surface on which the metal coating is formed facing downward, and The thickness of
For example, if both sides are polished and the thickness is 40 μm,
Even at the stage of polishing to a thickness of about 20 μm, considerable distortion occurs on the polished surface of the quartz plate 13.
In order to remove this distortion, at this stage, the processing aid formed by using the first processing aid 11 and the second processing aid 19, and the quartz plate being processed, 13 is taken out from the double-side polishing machine, washed well, and the surface of the metal film formed on the surface of the quartz plate 13 is turned up again. The quartz plate 13 having a thickness of 5 μm or less, which is a final target, is polished from the surface where the quartz plate 13 is placed on the surface of the processing aid 1 and is coated with a metal. Can be easily polished, and at the same time, the crystal plate 13 can be polished.
Is polished from both sides.
3, the generation of distortion generated by polishing from one side can be suppressed to a minimum,
Extremely thin, quartz plate 1 without changing the characteristics of quartz
3 can be polished. By the way, when the deposition is performed by using gold, the thickness of the deposition layer is 100 ° (angstrom) to 200 °, and the deposition layer can be formed uniformly on one surface of the quartz plate 13. Because you can
The thickness of the vapor deposition layer itself is a thickness that does not matter as compared with the thickness of the quartz plate 13 to be polished. By depositing a metal such as gold on one side of the crystal plate 13, even if the crystal plate 13 is processed halfway, the crystal mixed in the polishing agent such as cerium oxide. By washing the plate 13 with the abrasive and the crystal plate 13 with water, only the crystal plate 13 can be separated and taken out.

The quartz plate 13 and the upper surface of the first processing aid 11 are usually fixed with an adhesive or polished without using an adhesive. Using an agent, on the upper surface of the first processing aid 11, on the entire surface,
When the adhesive is applied and attached, in the case of a thin plate (for example, a thickness of 10 μm) or a quartz plate, the quartz plate 13 receives a strong external stress due to a contraction force when the adhesive hardens. As a result, the characteristics of the crystal plate 13 are reduced due to the distortion, and the characteristics of the crystal plate 13 are lost. Can not. Therefore, as shown in FIG. 14, a circular or other shape formed on the upper surface of the first processing aid 11 ', pure water is put in the groove 14, or rosin or other adhesive is applied. Put the crystal plate 1 in this pure water
3, the crystal plate 13 is placed so that the periphery of the lower surface is in close contact, and the surface tension of water is used, or water is frozen, or rosin or other adhesive, or vacuum suction is used. Then, the first processing aid 11 'and the crystal are formed by using a part of only the outer peripheral portion of the groove 14 having a circular shape or another shape formed on the upper surface of the first processing aid 11'. The plate 13 can be fixed.

As another example, a first processing aid 11 "having a first structure having a shape as shown in FIG.
Processing aid 1 formed using the processing aid 19 of FIG.
Using a processing aid 11 "having a 1" structure, the quartz plate 1
3 can also be polished.

Further, as another example, as shown in FIG. 17, a plurality of holes 16 are formed in the first processing aid 11, and two or three holes 16 are appropriate. This hole 16
By filling a viscous substance such as starch syrup, honey, an adhesive bond or grease or other adhesive, the lower surface of the quartz plate 13 is brought into close contact with the viscous substance, and the first processing aid 11 and The crystal plate 13 is spotted and fixed only by the area of the hole 16. Alternatively, vacuum suction may be used using holes 16. Note that the arrangement of the holes 16 is as shown in FIG.
As shown in FIG.
As shown in (b), they may be arranged concentrically, but are not limited to these examples. Also, using the hole 16 formed in the first processing aid 11, the first processing aid 11 and the quartz plate 13 are separated by using the area of the area of the hole 16, In the case where the first processing aid 11 and the crystal plate 13 are spotted and fixed to only a part, the second processing aid 19 may not be used. In addition, the crystal plate 13 is
Is used by adsorbing it on the upper surface of the processing aid 11 ′, since a double-side polishing machine cannot be used structurally, the structure uses a single-side polishing machine. However, a drawing of a structure in which the upper surface of the processing aid 11 'is sucked by vacuum suction is omitted.

The first processing aid 11 described above is connected to the first processing aid 11 shown in FIG.
As shown in (a), the upper wrapping plate 18
The upper and lower two wrapping plates of the lower wrapping plate 17 are used.
Quartz and cylindrical or other shapes are processed, the upper lapping plate 18 is formed with a ring or square or other shape groove or step 12, the back surface is polished, and a double-side polishing machine is used. Polishing extremely thin workpieces. Further, the first processing aid 11 is manufactured by using a metal such as super steel or iron or a glass, which is difficult to be polished, and the second processing aid is made of glass or
When made using metal such as steel or iron, the upper wrapping plate 18 made of metal such as iron
Polished the first processing aid 11 made of iron or the like, and the lower lapping plate 17 is made of a second processing aid 19 made of metal such as glass or super steel or iron. The quartz plate 13 is processed, or FIG.
As shown in FIG. 16A, the second processing aid 19 and the quartz plate 13 are arranged in a state opposite to the means described with reference to FIG. The tool 19 and the quartz plate 13 may be polished, and the first processing aid 11 may be polished using the lower lapping plate 17.

FIGS. 18 and 19 show the state of FIG.
3, a quartz plate 13 formed by using the first processing aid 11 and the second processing aid 19 and formed by polishing using the processing aid, The figure shows a polished shape. The reason why the shape of the quartz plate 13 shown in FIG. 18 is different from the shape of the quartz plate 13 shown in FIG. 19 is as follows.
The processing aid is manufactured using a material different from the material used for manufacturing the processing aid 19 of FIG. 19 and the material forming the second processing aid 19 shown in FIG. That's why. However, only when a wrapping plate on which a suede (pad or buff) is stuck is used, and in the case of a tin plate wrapping plate made of tin, the shape is the same as that of FIG. The second processing aid 19 shown is manufactured by using a hard glass made of quartz and having a hardness substantially equal to the hardness of the quartz plate 13 and using the hard glass. Figure 1
The second processing aid 19 shown in FIG.
This is due to the difference in that the second processing aid 19 is manufactured using a hard metal, such as plastics or hard metal, such as super steel or iron. However, it is a condition that cerium oxide, alumina, GC, diamond, or another abrasive is used as the abrasive. The reason is that when an abrasive such as cerium oxide is used, the quartz plate 13 and the hard glass are the same quartz.
Both can be polished well. However, metals such as super steel or iron can hardly be polished using cerium oxide. However, when an abrasive such as cerium oxide is used, the quartz plate 13 can be polished well. This is because the processing can be performed, and the polishing of the processing aid made of a metal such as super steel or iron can be delayed more than the polishing of the crystal plate 13. This difference is illustrated in FIG.
The shape of the quartz plate 13 and the quartz plate 13 shown in FIG.
This is the reason for the different shapes. The dimensions of the finished quartz plate 13 having the concave lens shape shown in FIG. 19 are the same as those of the quartz plate 13 shown in FIG. 26, and the holding portion 51 and the smooth line 53 are formed. Therefore, as a characteristic of the crystal unit, as in the case described with reference to FIGS. 2, 3, and 4, the crystal unit has an ideal shape exhibiting characteristics. ing. Another important point in performing the above-mentioned polishing process is that when performing the polishing process, usually, on both sides, a suede or a nonwoven fabric (hereinafter, referred to as a suede) is used.
Polishing is performed using the wrapping plates 17 and 18 stuck. In the case of manufacturing a quartz plate 13 having a concave lens shape as shown in FIG. 19, for example, one surface is made of a metal such as iron. By using a lapping plate 17 made of a plate and polishing the other side using a lapping plate 18 on which a suede is stuck, as shown in FIG. By using the wrapping plate 18 in which a suede is stretched on the upper wrapping plate 18 and using the wrapping plate 17 made of a metal plate such as iron, the lower wrapping plate 17 is polished by polishing. The back surface of the first processing aid 11 made of metal such as steel or iron is polished using a lapping plate 17 made of a metal plate. , The hardness of the metal plate forming the wrapping plate 17 and the hardness of the metal forming the first processing aid 11 are substantially equal to each other. The back surface of the processing aid 11 is set as a condition that the polishing process is difficult to perform as much as possible. The finished accuracy can be easily increased. Further, another important point is that the upper wrapping plate 18 has a suede, unevenness or similarity to the unevenness.
Polishing using a suede having undulations is also an important condition in manufacturing the quartz plate 13 having a concave lens shape. In addition, by using a double-side polishing machine, the quartz plate 13 having the shape shown in FIG. 26 can be polished, so that the reproducibility or accuracy of the finished quartz plate 13 is extremely high. There is also an advantage that a large amount of precision quartz plates 13 can be produced at low cost.

Although not shown in the drawings, the processing auxiliary tool formed by using the first processing auxiliary tool and the second processing auxiliary tool as the polishing means described above is used. As another method of use, a machine other than a double-side polishing machine, a single-side polishing machine, or another polishing machine may be used, as shown in FIG. Lens 13 with concave lens shape
Can be easily polished in a large amount.

Further, using the processing aids formed by using the first processing aid 11 and the second processing aid 19, the quartz plate is formed into a shape as shown in FIG. 13
Is polished using a double-side polishing machine or a single-side polishing machine, when previously polished into a concave lens shape using a processing means as shown in FIG. 25 or FIG. 26, by grinding the quartz plate 13 into a concave lens shape as shown in FIG.
A mask is applied to the central portion of the crystal plate 13, and laser irradiation such as an excimer laser is performed only on the central portion, and the initial thickness of the crystal plate 13 having, for example, 40 μm is
For example, only the central portion is subjected to 0.1 mm by one heat irradiation pulse.
A processing layer of about 1 μm is removed, and a heat irradiation pulse of about 200 pulses is performed in total, and a concave lens shape (inverted MESA type) having a depth of, for example, about 20 μm as shown in FIG. The shape of the crystal plate 13 is processed by using a laser or by using a chemical such as hydrofluoric acid or ammonium chloride to etch the quartz plate 13 so that only the central portion of the quartz plate 13 is formed. Into a concave lens shape,
Processing, or using a processing means such as ion milling or plasma etching using a fluorine-based gas or the like, processing only the central portion of the quartz plate 13 into a concave lens shape, or Using a means such as hanging, or using other means, the quartz plate 13
After processing into a concave lens shape, the quartz plate 13 processed into a concave lens shape as a subsequent processing step is shown in FIG.
Polishing using a processing aid as shown in FIG. 13 or carrier 3 shown in FIG. 20 without using a processing aid as shown in FIG.
7 is used directly on the quartz plate 13, the carrier 37 is used, the quartz plate 13 is planetary-moved, and the quartz plate 13 is formed on the quartz plate 13 using a double-side polishing machine. When the finishing process is performed to remove the layer, the finishing process is performed, and the polishing process is performed again, and the chemical etching process is performed again, a highly accurate concave lens shape or flat plate shape as shown in FIG. In this way, a large number of quartz plates 13 can be manufactured in a short time.

The upper and lower wrapping plates 17,
18, the carrier 37 on which the first processing aid 11 is mounted is rotated by the rotation together with the supply of the slurry (free abrasive grains), as shown in FIGS.
And the internal gear 38, and the processing aid 1
1 is revolved around the sun gear 39 and revolves around the planetary gear to make planetary motion. When the other side of the auxiliary tool 11 is polished using the upper lapping plate 18, the extremely thin quartz plate 13 can be easily polished. When a single-side polishing machine is used, the quartz plate 13 can be polished by the same means as the above-mentioned polishing means.

Further, after processing the extremely thin quartz plate 13 by the above means (for example, when the thickness is 10 μm)
Then, since the crystal plate 13 is extremely thin, it is difficult to handle it, and it is difficult to form electrodes on the crystal plate 13. Therefore, as shown in FIG. At the center of the fixing frame 48 made of non-insulating material,
3 is set, and the crystal plate 13 is fixed to the fixing frame 48 using an extremely thin gold wire 49 (for example, about 18 μm) using a bonding machine. The crystal plate 13
After being fixed to the fixing frame 48, as shown in FIG.
As shown in the figure, when the entire surface of the crystal plate 13 is lifted from below or by other means, the slackness of the gold wire 49 is corrected, and the gold wire 49 is brought into a linear state. Good.
In addition, as shown in FIG. 22, when the crystal plate 13 is fixed from at least three directions to the fixing frame 48 using the gold wire 49 by means as shown in FIG. By using a very thin gold wire 49, the crystal plate 13 is fixed in the air, so that the vibration of the crystal plate 13 is absorbed by the gold wire 49. The properties are not reduced to the extreme.

Further, as shown in FIG. 23, the quartz plate 13 is fixed to a fixing frame 48 using a gold wire 49, and then, as shown in FIG. In order to provide the electrodes, only a very small portion of the central portion of the quartz plate 13 is deposited using gold or the like, and then the deposited machine is mounted on the central portion of the quartz plate 13 from both sides. Is used to connect between the crystal plate 13 and the fixing frame 48 using a gold wire 49, and the gold wire 49 is attached to the center of the crystal plate 13 and used as an electrode 50. In comparison with a conventionally used electrode (for example, an electrode formed by vapor deposition on the front and back of a quartz plate), an extremely thin gold wire 49 (18 ·
) Can be used to form the electrode 50, so that the characteristics of the crystal are not degraded.

FIG. 25 shows an apparatus for manufacturing a crystal plate 13 having a concave surface on one side. In FIG. 25, 11 is the first
, A reference numeral 19 denotes a second processing aid, and 41 denotes a low-speed rotation of the processing aids 11 and 19 (for example, 100 to 300 rpm).
m), a motor 43 for rotating the polishing tool 44 at a high speed (for example, 5000 rpm). As the polishing tool 44, a soft tool such as a felt, a cotton swab, a buff or the like is used, and a polishing agent such as cerium oxide, GC, or diamond is used to polish about 1 μm per minute. As shown in FIG. 26, a disk-shaped crystal plate having an initial thickness of about 40 μm is finished into a concave lens-shaped crystal plate 13 having a thickness of 10 to 2 μm at the center. Also, the quartz plate 13 can be processed into a concave lens shape by using an apparatus having a structure as shown in FIG. 25. The polishing tool 44 used in this case is a diamond abrasive. By using a polishing tool 44 made of electroplated foil, the quartz plate 13 can be easily processed into a concave lens shape. Then, the quartz plate 13 processed into a concave lens shape
Is polished using a double-sided polishing machine or a single-sided polishing machine, a concave lens-shaped quartz plate 13 as shown in FIG. 19 can be polished and finished.

As the processing aid, in addition to the structure shown in FIG. 25, as shown in FIG.
1 ″ ′, or a ring-shaped processing aid 11a and a disk-shaped processing aid 11b shown in FIG. 28 are combined, integrated with an adhesive or the like, and the quartz plate 13 is placed thereon. A configuration can also be used.

Further, as shown in FIG. 29, an aluminum adhesive tape 45 having a hole formed on the upper surface of the quartz plate 13 and extending over the periphery thereof is attached on the second processing aid 19, By polishing with a polishing apparatus shown in FIG. 25, it is possible to manufacture a crystal plate 13 having a concave surface only at the center as shown in FIG.

Next, as an application example of the piezoelectric element of the present invention,
The acoustic-electric converter will be described. Conventionally, seismic exploration and prediction include ocean observation, underground structure exploration, geomagnetic observation, observation by GPS, and measurement of the movement of the earth's core by laser measurement of the distance between two points. Observing the vibration of air due to an earthquake or tsunami is another predictive method.

As a means for converting the vibration of air into an electric signal which can be easily recorded and analyzed, there is a sound collecting microphone.

FIGS. 30 (a) to 30 (e) show embodiments of an acoustic-electric converter using the piezoelectric element of the present invention. The acoustic-electric converter includes quartz, lithium niobate, or another single crystal. A cylinder 21 made of a material having a piezoelectric effect, such as crystal or barium titanate or other ceramics
Alternatively, the pressure receiving surface 22 is formed in the center of the cylinder 54, and a pair of electrodes 23 and 24 are formed on the pressure receiving surface 22.
Amplifier 25 for measuring the induced voltage between 3, 24
Are connected. (Only the electrodes 23 and 24 and the amplifier 25 are shown in FIG. 30A). 30 (a) is a biconvex lens (bi-convex) type, (b) is a biconcave lens type, (c) is a planar type, (d) is a planar type with R formed around it, and (e) is a uniconvex ( (plano-convex) type. As shown in FIG.
Is sealed using two pieces, and the inside of the cylinder 21 is sealed.
A chamber is formed, the inside of the cylinder 54 is sealed, and a chamber B is formed,
The left and right cylinders 21 of the cylinders 21 and 54 both have a structure in which the inside of the cylinder 21 is sealed and the inside of the cylinder A is sealed, and the inside of the cylinder 54 and the inside of the chamber B are both decompressed (preferably in a vacuum state). And the cylinder 54 catches vibrations in the horizontal axis direction and the vertical axis direction, and forms the pressure receiving surface 22 formed in the center portion of the cylinder 21 and the cylinder 54, when the cylinder 21 and the cylinder 54 are not formed. In comparison, the pressure receiving surface 22 has a structure that catches vibration more strongly. In addition,
For the above reasons, the smaller the diameter and the longer the length of the cylinders 21 and 54 are, the more the vibration from the outside is generated by the pressure receiving surface 2.
2 is easy to receive, so that a highly accurate pressure sensor can be made. In addition, when not depressurizing the insides of the chambers A and B, it is preferable to inject an inert gas.

FIG. 31 is a top view shown in FIGS. 30 (a) and 30 (e). The vibrated vibration caused the cylinder 21 and the cylinder 54 to vibrate from the portion A to the portion B or from the portion B to the portion A shown in FIGS. 30 (a) and 30 (e). Vibration
By freely moving from both ends, the cylinder 21 and the cylinder 5
Vibration (vibration of part A,
Vibration caused by vibrating the portion B) is caused by the cylinder 21 and the cylinder 54
By freely moving from both ends, the vibration that vibrated the portion A and the vibration that vibrated the portion B resonated in the center portion, causing a resonance phenomenon, and When the space portion 47 is not formed, the pressure receiving surface 22 formed in the center portion is vibrated stronger than the space portion 47 by comparison.

Next, a method of forming the pressure receiving surface 22 will be described. Basically, as shown in FIG. 32, quartz or barium titanate, lithium niobate or other ceramics, and other materials having a piezoelectric effect,
A round bar 30 made of a material is attached to a chuck 31 of a processing machine such as a lathe.
A processing tool 33 having a grindstone 32 with a diamond stone attached to the surface of a metal ball and a rotatably provided grinding wheel 32 at the tip is gripped by a tool holder 34. Whetstone 32
As shown in FIG. 33, is a sphere whose opposing surface is cut,
It is rotatably mounted. On the peripheral surface of the whetstone 32,
FIG. 34A is an enlarged cross-sectional view of FIG.
As shown in (b), a V-shaped groove 32a is formed, and one of the inner walls of the groove 32a has a directionality included in a plane passing through the center of the grindstone 32. This whetstone 32
Is rotated at high speed (preferably 8.000 to 50.000 rpm) by a jet stream of air, which is tangentially jetted from the air nozzle 40 to the peripheral surface of the grindstone 32,
Take the surface to be ground slowly (for example, 1μ
m) Sharpening. During this grinding, from the fountain nozzle 41
Water is injected to cool the grindstone 32 and discharge shavings. When the grindstone 32 is driven to rotate, the round bar 30
As shown in FIG. 2, a circular or cylindrical hole is formed by the grindstone 32 driven to rotate around the axis. As another method of using the grinding or polishing means described above, the use of a grindstone 32 ″ as shown in FIG. The shape shown in FIG. 4 or another shape can be applied to grinding or polishing.

When the polished surface of the pressure receiving surface 22 is convex, a drum-shaped whetstone 32 'is used as shown in FIG. 36 ((a) is a front view, and (b) is a plan view). When the polished surface of the pressure receiving surface 22 is flat, as shown in FIG.
A flat grindstone 32 "is used. Alternatively, as shown in FIG. 37, a grindstone 32 'having a diameter much smaller than the hole diameter is used, and the same rotational drive as the machining tool 33 shown in FIG. 33 is applied to the grindstone 32'. The grindstone 32 'is rotated while moving the processing tool 33' along a curved surface of the pressure receiving surface by an NC device or the like, and at the same time, the pressure receiving surface is processed while rotating the chuck 31 and the round bar 30. When the grindstone 32 ″ having a shape as shown in FIG. 36D is used as a means for forming the hole or space portion 47, the hole or space portion 47 can be easily processed while leaving the holding portion 47. Can be done. Further, as means for forming the hole or the space portion 47,
Even if you use a drill electrodeposited with ordinary diamond,
It is possible to form a hole or space part 47.

For machining a circular hole, a tool rotating around a normal axis can also be used. A spherical grinding wheel as shown in FIG. 38 and a disk grinding wheel as shown in FIG. 39 can also be used. Can be used. When the grinding process is completed using the grindstone 32, a polishing grindstone 32 ″ for polishing having the same structure as the grindstone 32 is manufactured using a material such as a felt or a buff and polished. When the grinding wheel 32 ″ is replaced with the grinding wheel 32 ″ and the polishing is performed using the grinding wheel 32 ″, the finishing process can be performed. Also, like the means for rotating and driving the grindstone 32, the groove 32
If (a) is formed and the air nozzle 40 is used to perform a rotational drive, the polishing can be easily performed.

It should be noted that FIGS.
Is a grinding and polishing apparatus having the structure shown in FIG.
FIG. The diameter of the whetstone 32 actually manufactured is 2
0 mm, the depth of the groove 32 (a) is 1 mm, the number of grooves
Is a grinding and polishing device with 16 structures
A tangential direction from the nozzle 40 to the peripheral surface of the grindstone 32
In addition, the injected air pressure and the rotation speed of the grindstone 32 were actually measured.
The actual number of revolutions is the following number. When the air pressure is 0.5 atm, the rotation speed of the grindstone 32
Is the number of revolutions of about 12.200 revolutions. When the air pressure is 1.0 atm, the rotation speed of the grindstone 32
Is the number of revolutions of about 22,000 revolutions. When the air pressure is 2.0 atm, the rotation speed of the grindstone 32
Is the number of revolutions of about 37.500 revolutions. The rotation speed of the grindstone 32 when the air pressure is 3.0 atm.
Is the number of revolutions of about 47.800 revolutions.  When the air pressure is 4.0 atm, the rotation speed of the grindstone 32
Is about the limit that a bearing can withstand, about 5
This is the number of revolutions of 0.000 revolutions.

In the grinding and polishing apparatus having the structure shown in FIGS. 40 and 41, a metal such as iron, aluminum, or copper, or a buff or
36. A polishing grindstone 32 ″ ″ (e) shown in FIG. 36 is made of felt, glass, plastic, ceramics, or another polishing material, and the polishing grindstone 32 ″ ″ (e) is formed. , As an abrasive, diamond paste or cerium oxide or alumina or GC or
Using other abrasives, a crystal is formed into a shape as shown in FIGS. 2A, 3A and 4A by using the processing method shown in FIG. Such as a piezoelectric material,
Grinding and polishing are performed simultaneously. Grinding and polishing can be performed simultaneously because the rotation speed of the grinding wheel 32 "" (e) is limited to the rotation speed up to 50.000 rotations, which is the limit that the bearing can withstand. Since the grinding wheel 32 "" (e) can be easily driven, the polishing process can be performed efficiently and in a very short time only by the polishing process. With a piezoelectric material such as this, two processes of grinding and polishing can be performed simultaneously using a polishing grindstone 32 ″ ″ (e) made of felt, buff, iron, or the like.

FIG. 42A shows an angular velocity sensor or a piezoelectric plate 57 made of a piezoelectric material such as lithium niobate or potassium niobate for manufacturing the angular velocity sensor. A thick plate of the piezoelectric plate 57, for example, a thick plate of about 350 μm, and a thin piezoelectric plate 57, for example, a plate of about 25 μm, are formed by using an adhesive layer 59 made of an insulator. 2 shows a piezoelectric plate 57 which is bonded and plywood.

FIG. 42 (b) shows a circular plate having a diameter of about 3 mm on the center of the thick plate of the piezoelectric plate 57 by using the processing means shown in FIG. , Processed into a concave lens shape (Inverted mesa type), the thickness was set to 25 μm, and the adhesive layer 59 was sandwiched.
This example shows a case where the processing was successful, which was used for an electrostatic capacity type angular velocity sensor and had a total of 50 μm. Although this lithium niobate or potassium niobate is a material that is very difficult to process, if the processing means shown in FIG. 1 is used, the material is not affected by heat and can be processed with high accuracy. It can be easily processed. In the case of lithium niobate, processing is difficult because the allowable temperature difference is a temperature difference within 20 ° C. or the allowable temperature difference is not allowed.

[0045] What is shown in FIG. 43 (a) is hydrofluoric acid, by using a fluorine-based gas, or other chemicals such as CHF _3, the quartz plate 13, over the mask, the central portion FIG. 2 shows the shape of a quartz plate 13 formed by etching a concave lens shape (inverted MESA shape) having a diameter of 1.5 mm, for example. When the quartz plate 13 or other piezoelectric material is etched using a chemical such as hydrofluoric acid, it is indicated by oblique lines.
When the shape of the outer peripheral part becomes a U-shape (floor digging shape) and an electrode is formed using vapor deposition, the hatched part becomes a shadow and it is difficult to form an electrode. Disadvantage of chemical etching.

FIG. 43B shows the state shown in FIG.
In order to correct the disadvantages of the etching process described in (a), using a double-side polishing machine shown in FIG. 20, for example, the upper lapping plate 18 is a lapping plate on which a suede 15 is stuck. 43, using a metal wrapping plate such as iron, or using a wrapping plate 17 and a wrapping plate 18 on both sides of which a suede 15 is stuck. FIG. 43 (b) shows that the etched concave lens-shaped portion of the quartz plate 13 shown in FIG. 43 (a) is polished using a suede 15 and a polishing agent such as cerium oxide. The first advantage is that such a smooth line 53 can be formed. Further, the second advantage is that since the abrasive is accumulated inside the concave lens shape, the inside of the concave lens shape can be polished more and more gradually using the upper lapping plate 18. And that the lower lapping plate 17 can be polished from both sides, so that it is as thin as possible, for example, about 0.5 μm (natural vibration frequency of about 3 GHz).
Even if the extremely thin quartz plate 13 up to z) is polished, the thickness of the holding portion 51 is 40 μm to 30 μm.
Since the thickness of the lens can be maintained, even if it is made extremely thin, there is no difficulty in maintaining the strength and handling of the concave lens portion. In addition, the third
The advantage of this is that the concave lens shape can be polished by using a plane polishing machine. The above three advantages are obtained from the etching and polishing combined use, or the etching and polishing combined use combined use of the etching and the double-side polishing machine or the single-side polishing machine or other polishing means.

FIGS. 44 (a), (b), (c) and (d)
FIG. 13 shows a processed surface in which a concave lens shape is formed on the quartz plate 13 using RIE processing, or plasma etching, or chemical etching, or other means. It is held by using the processing aid 11, and reference numeral 19 is made of hard glass or the like made of quartz. One surface is a back surface processed into a concave lens shape, and the other is a processing aid. 11 is shown in FIG.
21 shows a state in which polishing is simultaneously performed from both the upper and lower sides using the double-side polishing machine, the single-side polishing machine, or other processing means shown in FIG. FIG. 44D shows a completed dimensional diagram. When polishing the quartz plate 13 having the concave lens shape using a single-side polishing machine, the surface having the concave lens shape is held by using the processing aid 11 or directly. , The surface on which the concave lens shape is formed is attached to a kenbi (polishing machine) using an adhesive or the like, or using other means,
Attached to the Kenbi, the back side forming the concave lens shape,
Processing using etching, or etching,
When the machining is used in combination or the polishing is performed using a single-side polishing machine, the extremely thin quartz plate 13 can be easily polished.

The operation shown in FIG. 44 will be described in order as follows. FIG. 44A shows that the quartz plate 13 has R
A concave lens shape having a depth of 50 μm is formed by using IE processing or chemical etching means. To show the figure 44 (b), it is shown in Figure 13, by using the processing aid 11 integer, a surface forming a concave shape, using the processing aid 11, the quartz plate 13 keeping. FIG. 44C shows a state where 59.5 μm is shaved off by using a mechanical polishing means. In this case, only by mechanical means, 59.5μ
When all of m are removed, distortion occurs in the quartz plate 13. First, a thickness of about 56.5 μm is chemically reduced using an etching means such as RIE processing or plasma etching. If the remaining about 3.0 μm is scraped off using a mechanical polishing means after being scraped off using a means, no distortion occurs. FIG. 44 (d) shows the final stage.
The correction is performed again by using the etching process, and the process is completed.

FIG. 45 or FIG. 46 shows the base of the quartz plate 13 which is 2 inches in diameter and 75 μm thick and which has been mechanically polished. As shown in the above, 40 μm was removed by RIE processing,
Then, as shown in FIGS. 45 (c) and 45 (d), RIE processing or other chemical etching processing is performed using the processing aid 11 and the single-side polishing processing machine. Then, the irregularities of several μm generated were removed by performing a mechanical polishing process to improve the surface accuracy of the quartz plate 13, and then RIE processing or other chemical treatment was performed again from both sides of the quartz plate 13. By performing a typical etching process, the crystal plate 13 with high accuracy and extremely thin,
Can be processed.

The first processing aids 11 and 11 ″ shown in FIGS. 45 (c) and 46 (c) are manufactured using a metal such as iron, and the second processing aids are used. It is good to manufacture using metal, such as super steel, etc. 19. Moreover, the lapping plate in this case uses a tin plate etc. which are made of tin, and uses a single-side polishing machine as a polishing machine. Alternatively, a double-side polishing machine or another polishing machine may be used. Further, as a means for fixing the quartz plate 13 to the processing aid 11 or 11 ″, the processing aid 11, Or using a hole 16 formed in 11 "
In the direction of the arrow shown in the drawing, a structure is adopted in which the quartz plate 13 is sucked on the surface of the processing aid 11 or 11 ″ by vacuum suction, or the quartz plate 13 is sucked using vacuum suction.
In addition to using a single-side polishing machine, the quartz plate 13 is sucked to the processing aid 11 or 11 ″ by vacuum suction, and mechanical polishing is performed. However, using a vacuum suction, the crystal plate 13 is placed on the upper surface of the processing aid 11 or 11 ″.
The drawing for omitting the structure is omitted in the drawing. FIG.
46 and FIG. 46, the result of an experiment actually performed is as follows. As shown in FIGS. 45 (b) and 46 (b), when 40 μm is removed by RIE processing, 5
The unevenness inside and outside of 5 μm occurs.
For the purpose of removing by mechanical polishing, the first processing aid 11 or 11 ″ and the second processing aid 19
When using processing aids manufactured using
When the material for manufacturing the processing aid 19 is manufactured using a metal material such as super steel, which is a material difficult to be polished with an abrasive such as cerium oxide, the outer peripheral portion of the quartz plate 13 is formed. Since the circumferential portion of the circular portion is protected and polished by the processing aid 19 made of super steel, even if it is polished using a single-side polishing machine, for example, Since the lapping plate follows a metal plate such as a tin plate, processing with high parallelism and surface accuracy can be performed to the utmost. For example, using the tin plate as the wrapping plate, the processing aid 19 was manufactured using a super-steel. As shown in (d), when the inside and outside of 5 μm is polished using a single-side polishing machine or a double-side polishing machine, the parallelism and the surface accuracy are within an error range of 1/100 or less. By using this processing method, it was found that processing could be performed within 2 inches (approximately 5.8 cm). The degree (inclination angle) can be processed within an error range of 5 μm × 1/100 → 0.05 μm. Further, the outer periphery of the quartz plate 13 is protected by using a metal material such as super steel. Cracks or breakage occur around the crystal plate 13 The state of the processing method which disappears is illustrated. Although the above-described polishing has been described using a single-side polishing machine, the processing can be performed using a processing aid even with a double-side polishing machine.

As shown in FIGS. 44, 45 and 46,
A quartz plate having a flat plate or concave lens shape formed by holding a flat plate or concave lens shape surface of a quartz plate 13 having a flat plate or concave lens shape by using a processing aid 11 When the back surface of the substrate 13 and one surface of the processing aid 11 are simultaneously polished from the upper and lower surfaces using a double-side polishing machine, one surface of the quartz plate 13 having a flat plate shape or a concave lens shape is formed. Since there is no polishing at all, and only the back surface having a flat plate shape or a concave lens shape can be polished, there are the following advantages. By using a double-side polishing machine, it is possible to polish the crystal plate 13 which is extremely thin and has a flat plate shape or a concave lens shape. Even if the processing is performed using a double-side polishing machine, the flat surface or the concave lens shape is formed on the quartz plate 13 by using the processing aid 11 without any polishing processing. Or, only the back surface on which the concave lens shape is formed can be polished, so that the processing dimensional accuracy of the flat plate shape or the concave lens shape portion does not change. By using the processing aid 11, single-side polishing can be performed using a double-side polishing machine, so that roughing, lapping, polishing, polishing, polishing, Or, the precision of the processing dimension of the concave lens shape portion does not change. By using the processing aid 11, it is possible to achieve the parallel accuracy and the planar accuracy, which are the advantages of the double-side polishing machine, while performing the single-side polishing. By using the processing aid 11, both the advantages of the chemical etching process, the advantages of the single-side polishing machine, and the advantages of the double-side polishing machine can be utilized. By performing the one-side polishing using the processing aid 11, the disadvantage of the one-side polishing machine is eliminated.

FIG. 47 shows a quartz plate 13 having a concave lens shape manufactured by performing RIE, plasma, or other chemical etching from both sides of the quartz plate 13. 13, without using the processing aid 11, using a double-sided polishing machine, using the carrier 37 shown in FIG. After the work-affected layer is removed by machining, etching is performed again, and thereafter, the quartz plate 1 is formed by performing working from both sides again using both machining and etching.
3 shows a processing state. FIG. 47 (c) shows an example of a completed dimensional diagram.

FIG. 48 shows that when a quartz plate 13 is actually manufactured, several hundreds of 2.0-inch wafers are etched on the surface of the quartz plate 13 by etching.
Thousands, a flat plate shape, or a concave lens shape on one side, or a concave lens shape on both sides are formed. A state in which the quartz plate 13 is used after being reworked or used in a round shape is shown.

Although the processing means described with reference to FIGS. 44, 45, and 46 describes a processing method for each piece, actually, as shown in FIG. Using a 0-inch wafer, a large amount of etching can be performed at a time, and a processing aid 11 or a processing aid 11 ″ or another shape capable of holding a crystal plate 13 that has been subjected to a large amount of etching. In FIG. 20, processing is performed by using a processing aid, or directly without using the processing aid 11 or the processing aid 11 ″.
, Using a carrier 37 to make a planetary motion, using a double-side polishing machine to perform polishing from both sides, or performing a polishing process using a single-side polishing machine, and again After etching, the quartz plate 13
Is cut and manufactured one by one, and a large number of highly accurate quartz plates 13 can be manufactured in a short time at a low cost.

When the quartz plates 13 shown in FIGS. 48C and 48D are polished one by one, FIG.
A processing aid 61 as shown in FIGS.
Using a plastic, metal, or other material, a processing aid 61 is manufactured, and the quartz plate 13 is placed in the space 62 of the processing aid 61, as shown in FIGS.
As shown in FIG. 20, after the quartz plate 13 is inserted into the space portion 62, the carrier 37 shown in FIG. A processing step of performing processing and performing etching again may be used.

The crystal plate 13 shown in FIG. 49 (c) has a rectangular shape, and the processing aid 61 into which the rectangular crystal plate 13 is inserted is also a rectangular space. When polishing is performed using the processing aid 61 forming the processing aid 61, the processing aid 61 forming the round-shaped space portion 62 shown in FIG. If the carrier 37 is used directly and the planetary motion is performed using the processing aid 61 having a square shape, the polishing can be more effectively performed.

FIG. 50 shows a mask plate 63 made of, for example, a quartz plate 13 having a hole of 0.5 mm formed directly above the quartz plate 13, or quartz or tungsten seaside or other material. Mask plate 6 made of
3, using an ultrasonic processing machine or the like, a mask plate 63 having a hole of 0.5 mm is placed right above the quartz plate 13, and RIE (Rcacti) is performed from above the quartz plate 13.
ve Ion Etching) processing, depth 1
A state in which a concave lens shape of 5 μm is formed on the quartz plate 13 is shown. Why use mask plate 63 instead of masking instead of masking (metal coating)
When forming a concave lens shape of 15 μm to 25 μm or more on the quartz plate 13, when forming a concave lens shape of 15 μm to 25 μm or more on the quartz plate 13, the thickness of the metal film is determined by masking using an exposure unit. However, at the stage of forming a concave lens shape inside and outside 15 μm on the quartz plate 13 because it is at most about 1 μm, the thickness of the metal coating of the masking is completely eliminated and becomes zero, but it is useless. In addition to masking the quartz plate 13 using the mask plate 63 in which holes, for example, 0.5 mm holes are formed in the mask plate 63 and performing RIE processing, 13, it is impossible to form a concave lens shape having a depth of 15 μm or more. Also, the mask plate 63
As a material for the crystal, quartz or the like made of quartz, which is the same material as quartz, is a suitable material for the mask plate 63 when the quartz plate 13 is subjected to RIE processing. This is because, when the mask plate 63 is manufactured using quartz or a material other than quartz, the RIE is performed on the surface of the quartz plate 13.
Another substance that is decomposed by the fluorine gas used in the processing and turned into a plasma state adheres to the surface of the quartz plate 13 to form a phenomenon on the surface of the quartz plate 13. For this reason, it is impossible to process the quartz plate 13 with high accuracy. Therefore, a state is shown in which quartz or quartz is used as the mask plate 63 and the quartz plate 13 is used as the mask plate 63. ing. As a bad example, for example, if a plate or the like made of Pyrex is used as the mask plate 63, a substance such as aluminum contained in Pyrex is decomposed by fluorine gas to form alumina or the like, Pyrex cannot be used because a phenomenon occurs such that it adheres and combines on the surface of the crystal plate 13.

FIGS. 51, 52, 53 and 54 show that the quartz plate 13 is formed into a concave lens shape by RIE, plasma etching or other chemical etching means. After processing the quartz plate 13 into a concave lens shape, a mechanical polishing process is performed again using a double-side polishing machine, a single-side polishing machine, or other polishing means to form a concave lens shape. , By removing mechanically damaged layer of the processing surface formed by using the etching means, to obtain the parallel accuracy and surface accuracy of both surfaces, again, such as RIE processing, plasma etching, etc. Etching using a conventional etching means, the disadvantage of etching, very small, several μ
m, unevenness is generated. This unevenness is mechanically removed by polishing, and a concave lens shape is formed.
By combining the etching process and the mechanical polishing process on the back surface of the quartz plate 13, the quartz plate 13
Shows a state in which it can be processed extremely and thinly. In the drawings, hatched portions indicate portions that have been shaved off by using both etching and a double-side polishing machine or a single-side polishing machine. To summarize the above, the quartz plate 13 is processed into a concave lens shape using RIE processing or other chemical etching means, and then mechanically polished to perform RIE processing, or The minute unevenness formed by the chemical etching means can be removed, and the parallel accuracy and the surface accuracy can be improved. After that, by repeating the RIE process or the chemical etching process, the mechanical polishing process, and the etching process again, the surface accuracy can be reduced even if the quartz plate 13 is made as thin as possible. Even if the crystal plate 13 is made as thin as possible without lowering, the crystal plate 13 will not be perforated or damaged due to impurities due to excessive etching. Although FIGS. 51 and 52 show that only one surface of the quartz plate 13 is processed into a concave lens shape, FIG. 52 and FIG. Shows the quartz plate 13 in the case of forming a concave lens shape. However, FIG.
5, the crystal plate 1 shown in FIGS. 46, 53 and 54.
The rosin 60 injected into the concave lens shape to reinforce the concave lens shape formed in No. 3 may or may not be used. Further, as shown in FIGS. 51, 52, 53, and 54, the following processing means may be used for processing the quartz plate 13 having one side or both sides having a concave lens shape. After processing the quartz plate 13 into a concave lens shape from one side or both sides using a wet etching, chemical etching means, it is shown by oblique lines in the figure from one side or both sides. Reactive Ion Etching
(RIE) processing, relatively reduced from both sides,
By removing it, the thickness of the vibrating portion of the quartz plate 13 is reduced by 1 μm.
m or less. The advantage of the above-mentioned processing method is that the quartz plate 13 is formed by forming a concave lens by using a chemical etching means, which is a wet etching, so that minute scratches formed by mechanical polishing can be obtained. After the (scratch) disappears, the whole surface is thinned from both sides forming the concave lens shape by RIE processing.
There is an advantage that the surface accuracy of the processed surface is improved.

[0059]

The object to be polished is etched to form a concave lens shape, and then finished using a double-side polishing machine, a single-side polishing machine, or other polishing means. By polishing, a smooth line, which cannot be formed by etching, can be formed, so that the electrode can be easily formed by vapor deposition. Furthermore, by using the etching and polishing process from the back surface processed into a concave lens shape, it is possible to process and polish a very thin and thin quartz plate, and to reduce the sub vibration. There is.

Since the piezoelectric material, particularly quartz, is a hard and brittle material, the processing method is limited to the lapping method and the etching method, and there is a limit to thinning. By developing a piezoelectric element processing technology of a new processing method using both etching and polishing or a processing method using both etching, polishing and etching, the thickness becomes 0.125 μm (natural vibration frequency about 12.0 μm).
(GHz) high-frequency vibrator. Further, by using a processing technique in which etching / polishing or etching / polishing / etching is used in combination, it is possible to develop an oscillation element of the order of 0.06 μm (natural oscillation frequency of about 24,0 GHz) in the future. When the quartz plate is thinned to the limit and the natural vibration frequency is increased, the diameter of the vibrating portion of the quartz plate vibrates if it is 100 times or more the thickness of the vibrating portion. The higher the value, the smaller the diameter of the vibrating part, so the area of the quartz plate decreases in proportion to the natural vibration frequency. In other words, the higher the frequency, the higher the cost per area of the quartz plate,
It can be manufactured at low cost. Furthermore, there is an advantage that the higher the frequency, the higher the value of the product.

The concave lens shape is subjected to RIE processing and chemical etching processing, and the processing of the rear surface of the surface on which the concave lens shape is formed is performed by RIE, etching, or other etching means. Therefore, if the entire surface of the back surface is reduced to a certain thickness, and then mechanically polished, and then, again, in the step of performing an etching process, if the crystal plate is processed, for example, the thickness of the crystal plate is reduced. ,
When a concave lens shape with a depth of 25 μm is formed on a 75 μm quartz plate and the thickness of the vibrating portion is left at 10 μm, the remaining is 4 μm.
0 μm remains. Of the remaining 40 μm, 35 μm is RIE processed only from the back surface of the concave lens type shape,
Or the remaining 4 by means such as plasma etching.
After shaving off 35 μm of 0 μm, the remaining 5 μm
Can be polished by machining, after processing by plasma etching, etc., unevenness of several μm can be cut off by machining, and the processed surface can be polished to a mirror surface. After the polishing process, the etching process such as RIE process is performed again, and the remaining thickness of 10 μm is reduced to 1 μm by the etching process.
If the thickness is set to the front and rear, the margin by the RIE processing is small, so that the precision of the processed surface is not reduced. According to the above-mentioned processing method, since a portion to be machined is polished only for about 5 μm, there is an advantage that no or almost no distortion occurs. In addition, if the thickness is 7
In the case of 5 μm or more, for example, even when the thickness is 100 μm, the portion to be removed by etching is 35 μm when the thickness is 75 μm, but in the case where the thickness is 100 μm , 60 μm, so that the thickness is reduced by etching. Even if the thickness is changed from 35 μm to 60 μm, there is not much effect. This is because irregularities of several μm formed by the etching process can be removed by mirror polishing in a subsequent mechanical polishing process. The thickness of this quartz plate is 75μ
A crystal plate having a thickness of 100 μm or more (for example, a diameter of 2.0 inches and a diameter of a substrate or more) that is thicker than the case of m can be easily processed. The larger the diameter of the quartz plate, the thicker the quartz plate. That is, the advantages of the present invention can be summarized in the following four points. Since a base of a quartz plate having a large diameter of 2.0 inches or more can be used, an oscillator that oscillates at a high frequency with a low cost and high added value can be obtained. Even if the thickness of the quartz plate becomes thick, it is a method of processing it very thin without generating any or almost no distortion. Therefore, a very thin quartz plate (base) with a large diameter of 2.0 inches or more Can be manufactured. Since it is a processing method using both etching and polishing or a combination of etching, polishing and etching, it can be processed as thin as possible. A highly accurate concave lens shape can be formed on both surfaces. To be able to achieve the above technology,
Since the thickness of the quartz plate is about 30 to 75 μm, it is not necessary to use the processing aid of the present invention. It is easier to use tools, extremely thin,
Processing of 2.0 inches or more, which is a large-diameter base, can be performed.

In the case of the Plano-Convex type shape, if a certain shape, Plano-Convex type shape is formed, etching such as RIE processing is performed from the back side of the plane forming the Plano-Convex type. Is performed, and the etching and the single-side polishing machine or other polishing means are used together to obtain a Plano-Co.
By processing and polishing the back surface of the nvex type shape, an extremely thin Plano-Convex type shape can be easily formed.

When a quartz plate is processed into a concave lens shape using the RIE processing technique, a quartz plate, a quartz plate, tungsten seaside, iron, or another material is subjected to ultrasonic processing or the like. For example, it is impossible to form a concave lens shape of 15 μm or more in quartz unless a quartz plate or quartz having a hole of about 0.5 mm is used as a mask plate. When using and masking, the thickness of the film should be at most 1
This is because the film thickness up to μm is the limit.
In the case of μm, when the crystal is a material, the metal film is 1 and the crystal is about 15, so that a concave lens shape having a depth of about 15 μm can be formed. With current technology,
When RIE processing is performed using masking of a metal film, the limit of forming a concave lens shape having a depth of 15 μm is limited due to the limit of the metal film.
Quartz plate or quartz plate or other material, for example, 0.5
If a quartz plate or the like having a hole of about mm is used as a mask plate, there is an advantage that there is no limit to the depth and a concave lens shape of any depth can be formed.

At present, in the case of an AT-cut quartz crystal having a diameter of 2 inches, the thickness of the quartz plate is 75 μm, the thinnest.
The size is the limit of manufacturing, and this 75 μm is the thinnest and the thickest. In order to produce a very thin quartz crystal unit in mass production, in the case of the AT cut, the diameter is 2 inches. You will use the base. The problem here is that making a crystal unit that is extremely thin, high in accuracy and high in frequency is incompatible with manufacturing a crystal unit at low cost in mass production. . As a means to solve the above problem, to process the quartz plate extremely thin,
Either use the processing aid of the present invention alone, or use the processing aid and RI for the purpose of processing the quartz plate extremely thinly.
When the RIE processing and the mechanical polishing are used together and the RIE processing and the mechanical polishing are repeated several times using the E processing in combination, and the diameter is 2 inches. The thickness is 75 μm, there is a manufacturing limit. The thickness of the substrate is 10 μm to 50 μm or less, and the diameter is
If a 2 inch base can be made, the depth when forming the concave lens shape to be removed by chemical etching or RIE processing when forming the concave lens shape by subsequent processing should be reduced. By doing so, the surface accuracy of the vibrating portion forming the quartz crystal resonator, which is formed into a concave lens shape, is further improved. In addition, by using the processing aid of the present invention, it is easy to make a base having a thickness of about 10 μm and a diameter of 2 inches, so that one or both sides can be processed into a concave lens shape. Without doing
High frequency (for example, 16
7 MHZ or more)
There is also an advantage that it can be manufactured by E processing or wet etching processing and a processing method using a processing aid.

Further, using the processing aid of the present invention, such as a double-side polishing machine or a single-side polishing machine,
By repeatedly using mechanical polishing and chemical etching means, such as RIE processing or wet etching, the thickness of the crystal is now about 75 μm when the diameter is 2 inches, and the manufacturing limit is limited. is there. Also, the diameter of the crystal is 3
The thickness of the quartz, in mm, has a manufacturing limit of about 24 μm. The above-mentioned limitations of the production can be achieved by using the processing aid of the present invention to perform mechanical polishing or without using the processing aid, for example, a float polishing polishing method, RIE processing, or chemical processing. By repeatedly performing (mechanical polishing processing → RIE processing → mechanical polishing processing → RIE processing) in combination with appropriate etching, even a substrate with a diameter of 2 inches can easily have a thickness of about 10 μm. Since a quartz crystal plate can be manufactured, there are the following advantages. Even with a substrate of 2 inches or more, the thickness is around 10 μm,
Since a flat crystal plate can be processed, a large number of crystal oscillators of 167 MHz or more can be manufactured at a low price. Currently,
Even when the diameter is 3 mm, since there is a manufacturing limit at 24 μm, there is a manufacturing limit around 70 MHz at most. Since it is a repetitive processing method using both mechanical polishing processing and RIE processing, there is also an advantage that distortion due to polishing processing does not occur. The parallelism and surface accuracy of the finished quartz plate are good. This processing means can be used for piezoelectric materials other than quartz.

At present, in the case of a quartz plate having a diameter of 2 inches, a quartz plate having a thickness of 75 μm or less cannot be manufactured. Since the thickness of the quartz plate is limited to 75 μm, there is a limit of production. Then, excessive etching is performed by chemical etching which is a processing means, and a hole (pinhole) is generated. However, if a quartz plate with a diameter of 2 inches and a thickness of the quartz plate of 50 μm or less to inside and outside of 10 μm can be manufactured in the case of a diameter of 2 inches, there is little margin for subsequent etching. Since the influence on the quartz plate is reduced, it is possible to perform extremely thin and highly accurate processing. In order to manufacture a very thin quartz plate having a diameter of 2 inches and a quartz plate thickness of 50 μm or less to 10 μm or less, a double-side polishing machine using a processing aid or a single-sided polishing machine By using a polishing machine or other polishing means in combination with RIE processing or chemical etching processing and repeating it alternately, allowance for mechanical polishing processing (thickness for polishing processing)
Is made as small as possible, and through etching such as RIE processing, the margin is made as large as possible. This is a revolutionary, extremely thin, large diameter, high precision quartz plate. That is, a large number of crystal units can be easily manufactured. In addition, if the thickness of the quartz plate is about 50 μm and the diameter of the quartz plate is 2 inches, polishing can be performed by using a processing aid, even when using a double-side polishing machine. I can do it. Further, if a quartz plate (base) having a diameter of 2 inches and a thickness of 10 μm is made, if the thickness is 10 μm, the diameter of the quartz plate becomes
If it has a diameter of 100 times, it vibrates, so 1mm x 1mm
It is only necessary to have an area of 10 μm,
When a 2-inch quartz plate (base) is formed, about 2,000 167-MHz quartz oscillators are formed on a 2-inch quartz plate,
Since it can be made from a single crystal plate, a revolutionary, extremely low-cost, high-precision quartz crystal resonator can be manufactured.

For mechanically polishing a quartz plate, or silicon, gallium arsenide, or other electronic material, the lateral holding and movement forms a processing aid. If the processing aid is used as a stopper to hold it, and the vertical holding and movement is fixed to the processing aid using a vacuum suction force, such as a quartz plate, it is extremely weak Even if vacuum suction force is used, a quartz plate can be held in a processing aid by using both the holding power of the processing aid and the suction power of vacuum suction. The ability to attract a quartz plate, etc. to the processing aid with the attraction force minimizes the stress generated by the vacuum attraction force, thereby minimizing the strain applied to the quartz plate. Thereby, a vacuum suction force can be used. This also has the advantage that the quartz plate can be fixed to the processing aid and polished by using the two effects of the processing aid and the vacuum suction force together.

As described above, according to the present invention, it is possible to provide a piezoelectric element and a method of processing the piezoelectric element which are thinner than the conventionally difficult thickness. can do.

[Brief description of the drawings]

FIG. 1 is an explanatory view showing an outline of a processing method of the present invention.

FIGS. 2A and 2B show a first example of manufacturing a quartz oscillator, and FIG.
7A shows a cross-sectional shape of the vibrator, FIG. 6B shows a Nomarski micrograph of the vibrator, and FIG. 6C shows a reactance frequency characteristic. The surface material is AT cut, the thickness of the material is 103μ
m, the diameter is 5 mm, the processing size is 25 μm in thickness, and the radius of curvature is 30 mm.

FIGS. 3A and 3B show a second example of manufacturing a crystal unit, and FIG.
Shows the cross-sectional shape of the vibrator, and (b) shows the reactance frequency characteristics. The surface material is AT cut, the thickness of the material is 103 μm, the diameter is 5 mm, the processing size is 9 μm in thickness, and the radius of curvature is 200 mm.

FIG. 4 shows a third example of manufacturing a quartz oscillator, in which (a)
Shows the cross-sectional shape of the vibrator, and (b) shows the reactance frequency characteristics. The surface material is AT cut, the thickness of the material is 77 μm, the diameter is 5 mm, and the processing size is 27 μm.

FIG. 5 is a diagram showing a reactance frequency characteristic of a crystal resonator having an AT cut and a thick quartz resonator.

FIG. 6 is a diagram showing a reactance frequency characteristic of a quartz crystal unit having a thick AT-cut surface material.

FIG. 7 is a diagram showing the reactance frequency characteristics of a quartz crystal unit having a thin AT-cut surface material.

FIG. 8 is a diagram showing a reactance frequency characteristic of a thin quartz crystal unit in which a surface material is AT-cut and has a small thickness.

FIG. 9 is a diagram showing the reactance frequency characteristics of a quartz oscillator having a thinner AT material and a thinner thickness.

FIG. 10 is a diagram showing the reactance frequency characteristics of a quartz oscillator having a thinner AT material and a thinner thickness.

FIG. 11 is a sectional view of a first processing aid in the processing method of the present invention.

FIG. 12 is a sectional view of a second processing aid in the processing method of the present invention.

FIG. 13 is a cross-sectional view of a state in which a second processing aid and a quartz plate are set on the first processing aid.

FIG. 14 is a sectional view showing another example of the processing apparatus of the present invention.

FIG. 15 is a sectional view showing another example of the processing apparatus of the present invention.

FIG. 16 is a cross-sectional view showing a state where the processing apparatus of the present invention is sandwiched between lapping plates.

FIG. 17 is a plan view of another processing aid in the processing apparatus of the present invention.

FIG. 18 is a cross-sectional view of a quartz plate manufactured using the processing aid of FIG.

19 is a cross-sectional view of a quartz plate manufactured using the processing aid of FIG.

FIG. 20 is a plan view showing the movement of the wrapping plate.

FIG. 21 is a plan view showing the movement of the wrapping plate.

FIG. 22 is a top view showing an embodiment of the present invention.

FIG. 23 is a sectional view showing an embodiment of the present invention.

FIG. 24 is a sectional view showing an embodiment of the present invention.

FIG. 25 is a cross-sectional view showing an example of the processing apparatus of the present invention.

FIG. 26 is a cross-sectional view of a quartz plate manufactured by using FIG. 25 or another apparatus.

FIG. 27 is a cross-sectional view showing another example of the processing aid.

FIG. 28 is a cross-sectional view showing another example of the processing aid.

FIG. 29 is a cross-sectional view showing another example of the processing aid.

FIG. 30 is a sectional view showing an embodiment of the present invention.

FIG. 31 is a top view showing an embodiment of the present invention.

FIG. 32 is a cross-sectional view showing a processing method according to the present embodiment.

FIG. 33 is a side view showing a working tool in the present embodiment.

34A and 34B are a side view and an AA cross-sectional view illustrating an example of a grindstone according to the present example.

FIG. 35 is a cross-sectional view showing a processed example in the present example.

FIG. 36 is a side view and a plan view showing another example of the grindstone in the present embodiment.

FIG. 37 is a sectional view showing another example of the working tool according to the present embodiment.

FIG. 38 is a cross-sectional view showing another example of the working tool in the present embodiment.

FIG. 39 is a cross-sectional view showing another example of the working tool in the present embodiment.

FIG. 40 is a side view and a top view showing an actual production drawing of the working tool in the present embodiment.

FIG. 41 is a longitudinal sectional view and a side view of an enlarged view showing an actual production drawing of the working tool in this embodiment.

FIG. 42 is a cross-sectional view showing a processed example in the present example.

FIG. 43 is a cross-sectional view showing a processed example in the present example.

FIG. 44 is a cross-sectional view of a quartz plate manufactured using the processing aid of FIG.

FIG. 45 is a cross-sectional view of a quartz plate manufactured using the processing aid of FIG. 13;

FIG. 46 is a cross-sectional view of a quartz plate manufactured using the processing aid of FIG.

FIG. 47 is a sectional view showing an embodiment of the present invention.

FIG. 48 is a top view showing the embodiment of the present invention.

FIG. 49 is a top view showing the embodiment of the present invention.

FIG. 50 is a sectional view showing an embodiment of the present invention.

FIG. 51 is a sectional view showing an embodiment of the present invention.

FIG. 52 is a sectional view showing an embodiment of the present invention.

FIG. 53 is a sectional view showing an embodiment of the present invention.

FIG. 54 is a sectional view showing an embodiment of the present invention.

[Description of Signs] 1 ball grinding stone, 2 spindles, 3 cylindrical magnets, 4 quartz plates, 5 grinding spindles, 6 tool holders, 11 first processing aids, 12 ring shape or square shape or other shapes Groove or step, 13 quartz plate, 14 circular or other shaped groove, 15 suede, 16
Hole, 17 lower wrapping plate, 18 upper wrapping plate, 19 second processing aid, 21 and 54
Cylinder, 22 pressure receiving surface, 23, 24 electrodes, 25 amplifier,
30 round bar, 31 chuck, 32, 32 ', 32 ",
32 "', 32""grinding or polishing whetstone, 32 (a)
Groove, 33, 33 ', 33 "processing tool, 34 tool holder, 35 support arm, 36 bearing, 37 carrier, 38 internal gear, 39 sun gear, 40 air nozzle, 41 fountain nozzle, 42, 43 motor, 44
Polishing tool, 45 adhesive tape, 46 holes or space, 4
7 holding part, 48 fixing frame, 49 gold wire, 50 electrodes,
51 holding part, 52 groove, 53 smooth line, 55 stopper,
56 holding part, 57 diamond abrasive, 58 piezoelectric plate, 5
9 adhesive layer, 60 rosin, 61 a third processing aid, 62
Is a space portion, a mask plate having 63 holes,

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 41/09 H03H 3/02 A H03H 3/02 H01L 21/302 J 41/08 C

Claims (25)

[Claims] 1. A quartz plate is polished using a double-side polishing machine, a single-side polishing machine, or another polishing machine.
Polished quartz plate (for example, when the thickness of the quartz plate is
m, the diameter of the quartz plate is 2 inches)
Or, from both sides, RIE (Reactive Ion E)
tching), chemical etching, etc.
Or do chemical wet etching to get
After removing about μm (for example, 60 μm),
Irregularities of several μm generated by chemical etching such as RIE (for example, 60 μm by RIE)
m is removed, irregularities of about 6 μm are generated).
After performing polishing by a double-side polishing machine, a single-side polishing machine, a float polishing machine, or other polishing means, and polishing, the finishing R
Chemical etching such as IE processing (for example, 1
(Approximately 0 μm) from both sides or one side to produce an extremely thin, highly accurate quartz plate or other electronic material having a diameter of 2 inches and a thickness of about 10 μm to 30 μm, for example. A method for processing a piezoelectric element, comprising: 2. A ring or square or other shape groove or step is formed on the upper surface of the first processing aid,
The groove or step, a little higher than the depth, a cylindrical or other shape, hard glass, or iron, or other materials, the second processing aid, the groove or step, , Fit, the second of the processing aids, the first
A processing aid, from the top surface, the same as the protruding height, or slightly lower or higher than the protruding height, a disk-shaped or other shape, a piezoelectric element polished object is installed, the piezoelectric element An upper lapping plate on the upper surface of the object to be polished,
Using two upper and lower wrapping plates of a lower wrapping plate below the first processing aid,
2. A thin workpiece is polished.
The method for processing the piezoelectric element according to the above. 3. A liquid is put into a circular or other shaped groove or step formed on the upper surface of the first processing aid, and the periphery of the lower surface of the object to be polished of the piezoelectric element is in close contact with the liquid. So that the object to be polished is placed on the first processing aid and the liquid is subjected to surface tension use or icing, so that the first processing aid and 2. The method for processing a piezoelectric element according to claim 1, wherein the object to be polished is fixed to the object to be polished. 4. The piezoelectric element to be polished is placed on a hydrophilic thin plate containing water placed on an upper surface of the first processing aid and is contained in the hydrophilic thin plate. The method according to any one of claims 1 to 3, wherein the first processing aid and the object to be polished are fixed to each other by using surface tension of water. Processing method of piezoelectric element. 5. A plurality of holes are formed in the first processing aid, and the holes are filled with a viscous substance such as starch syrup, honey, an adhesive bond or grease or other adhesive. The lower surface of the object to be polished is adhered with the viscous substance, or the first processing aid and the object to be polished are separated by the area of a hole by using a vacuum attraction force. 5. The method for processing a piezoelectric element according to any one of claims 1 to 4, wherein spotting and fixing are performed using a vacuum attraction force. 6. The first processing aid and the second processing aid using rosin, starch glue or other adhesive.
5. The method according to claim 1, wherein the piezoelectric element is fixed. 7. The first processing aid is manufactured using a metal such as iron, and the second processing aid is formed of a super steel or
Using iron or glass or a material similar to glass,
The method for processing a piezoelectric element according to claim 1, wherein the piezoelectric element is manufactured. 8. An object to be polished is masked with a mask, and only the center portion is subjected to RIE processing, ion milling, plasma etching, or other chemical etching using, for example, CHF ₃ or the like. After processing into a flat plate shape or a concave lens shape (inverted MESA shape) using the means, as a subsequent processing means, a double-side polishing machine, a single-side polishing machine, a float polishing machine or other polishing processing means is used. Using, the etched surface, the processed surface, using RIE processing, or other etching means, the surface subjected to the etching process, or the processed surface of the back surface, after mechanical polishing, again RIE processing, or chemical etching processing, and polishing processing are repeatedly used together in order, and the processing is performed. Engineering method. 9. The processing holder is made to hold a crystal plate, one side is polished on one side of a quartz plate, and the other one side is processed on one side of the processing holder using a double-side polishing machine. A method for polishing a piezoelectric element, wherein a double-side polishing machine is used as a single-side polishing machine by simultaneously polishing from above and below. 10. A quartz plate processed into a concave lens shape is held by using a processing holder, one side of which is one side of the quartz plate, the other side is one side of the processing holder, and a double-side polishing machine is used. A polishing method for a piezoelectric element, wherein the polishing is performed simultaneously from above and below. 11. A quartz plate is processed into a concave lens shape, the surface processed into the concave lens shape is held by using a processing holder, one surface is processed into the concave lens shape, and the other surface is processed and held. A polishing method for a piezoelectric element, in which one side of a tool is simultaneously polished from above and below using a double-side polishing machine, and an extremely thin piezoelectric element is processed. 12. Polishing of a quartz plate whose one or both surfaces are processed into a concave lens shape by using a double-side polishing machine from the top and bottom simultaneously to process an extremely thin piezoelectric element. Processing method. 13. A mortar, paraffin or other resin is injected into the concave lens shape of a quartz plate processed into a concave lens shape to reinforce the strength inside the concave lens shape.
A polishing method for a piezoelectric element, wherein a quartz plate is simultaneously polished from above and below using a double-side polishing machine or a single-side polishing machine, or is polished using a single-side polishing machine. 14. The material of the working holder is made of a metal such as plastics, super steel, or iron, which is difficult to be polished with an abrasive such as cerium oxide. 14. The method for polishing a piezoelectric element according to claim 1, wherein conditions are set so as not to be easily achieved. 15. A piezo resin, paraffin, glue or other resin is injected into a concave lens-shaped portion of a quartz plate obtained by processing a piezoelectric material such as a quartz plate into a concave lens shape by plasma etching or the like using a concave lens shape. After reinforcing the strength inside the concave lens shape, the back surface forming the concave lens shape is polished using a double-side polishing machine, or a single-side polishing machine, or chemically etched, Polishing method of the element. 16. A material having a piezoelectric effect such as quartz, lithium niobate, potassium niobate, or other single crystals, barium titanate, piezoelectric ceramics, or other ceramics is provided at the center of the cylinder. A method for processing a piezoelectric element, comprising: forming a pressure receiving surface, and forming a pair of electrodes on the pressure receiving surface. 17. The method for processing a piezoelectric element according to claim 15, wherein the cylinder and the pressure receiving surface are made of an integral material having a piezoelectric effect. 18. A round bar made of a material having a piezoelectric effect, holes are drilled from both ends using a grinding means, and a pressure-receiving surface having a predetermined thickness is formed at the center of the round bar. Furthermore, the air vibrations, which have entered the outer peripheral portion of the pressure receiving surface from the left and right, come and go, so that the air vibration of the cylinder, which has entered the pressure receiving surface from the left and right, can resonate at the central portion. In order to be able to form a hole or space part, the air vibration entered from the left and right of the cylinder,
A method for processing a piezoelectric element, characterized by causing resonance at a central portion of a cylinder to cause a resonance phenomenon and causing a pressure-receiving surface located at the central portion to vibrate more strongly. 19. A cylindrical hole is formed from both ends of a round bar made of a material having a piezoelectric effect by using a grinding means, and a pressure-receiving surface having a predetermined thickness is formed at the center of the round bar. Is formed, and a pair of electrodes is provided on the pressure-receiving surface to reduce external air vibration, 20. The grinding means forms a groove on the surface of the barrel-shaped grindstone, and rotates the grindstone by injecting air or liquid into the groove, or uses other mechanical means. 20. The method for processing a piezoelectric element according to claim 19, wherein the barrel-shaped grindstone is rotated. 21. The method for processing a piezoelectric element according to claim 19, wherein the barrel-shaped grindstone is formed using a steel ball close to a true sphere. 22. A central portion of the quartz plate, wherein the central portion of the quartz plate is subjected to vapor deposition or plating using a metal such as gold, and a metal portion is formed using means such as vapor deposition. A method for processing a piezoelectric element, wherein a thin gold wire is connected and used as an electrode of a quartz plate, and a voltage is applied to the quartz plate using the gold wire. 23. Plano-Convex on a quartz plate
Mold shape and concave lens mold shape (inverted-me
sa shape) by mechanical polishing or chemical etching means, and then perform plasma etching again from the back surface of the surface forming the Plano-Convex shape and the concave lens shape. Or, without performing the etching process, using a single-side polishing machine, or a double-side polishing machine, or other processing means, from the back surface forming the concave lens shape, polishing processing,
A piezoelectric element processing method for processing a Plano-Convex type shape and a concave lens type shape extremely and thinly. 24. A quartz plate is formed into a flat plate shape, a concave lens shape, or another shape by RIE processing or other chemical etching means, and then a flat plate shape or a concave lens shape is formed. RIE from the back side
By processing, plasma etching, or other chemical etching means, tens of μm, shaving off, flat plate shape,
Or, the concave surface of the concave lens shape, several tens of μm, RIE processing, or other etching means, formed on the processing surface shaved, several μm irregularities, using machining,
Use a processing aid or use a processing aid to polish the back surface forming a flat plate shape or a concave lens shape to a mirror surface by polishing about several μm. Without doing, using a single-side polishing machine, or a double-side polishing machine, or other polishing processing means, polishing the rear surface of the flat plate shape, or concave lens type shape, a few μm, polishing the mirror finish processing Perform, after that, the mirror-finished processing surface is again formed into a flat plate shape or a concave lens shape by using RIE processing or chemical etching processing means, so that the flat surface shape is maintained. Or a method of processing a piezoelectric element, wherein a concave lens shape is formed on both sides (both sides). 25. A mask plate, in which holes are formed in a quartz plate or a quartz plate made of quartz, placed on the quartz plate,
Used as a substitute for masking (metal coating)
active Lon Etching (RIE)
A method for processing a piezoelectric element, comprising processing to form a concave lens shape on a quartz plate.