JP2000188288A - Method and device for manufacture of semiconductor substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To effectively perform static elimination on the front and rear of a substrate by neutralizing an electric charge that is electrified on the glass substrate using plasma discharge using an inert gas. SOLUTION: A glass substrate 1 is retained on the floor surface of a substrate placement stage 16 in a reactor 2 and is heated by a heater 3 below a floor surface. After that, a gas seed where SiH4, NH3, H2, N2, and the like are mixed is passed through gas piping 5 and a gas is emitted to the entire substrate, a high voltage is applied from a high-frequency power supply 7 after pressure and gas flow rate in a reactor become stable, and a film is formed on the glass substrate 1 due to plasma discharge. A non-reaction gas is unloaded out of a device. After the film formation is completed, the film is released from the reactor 2. In that case, a static electricity is generated and is electrified on the reverse side of the glass substrate 1. After that, such inert gas as He, N2, and H2 is emitted to the entire portion in the reactor, the pressure and gas flow rate are stabilized, a high voltage is applied from the high-frequency power supply 7, and an electric charge being electrified on the front and rear of the glass is electrically neutralized by plasma discharge.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for forming a wiring insulating film and a transistor in a method for manufacturing a semiconductor substrate such as a TFT array substrate, and an apparatus for manufacturing the same.

[0002]

2. Description of the Related Art FIG. 1 is a front sectional view showing an example of a conventional semiconductor substrate manufacturing apparatus (film forming apparatus). First, the substrate 1 is placed in a reactor (chamber) 2 maintained in a vacuum.
Is transported. Next, the glass substrate 1 is held horizontally in a reactor whose temperature is controlled by the heater 3, and a mixed gas of SiH ₄ , NH ₃ , H ₂ , N _2, etc. is supplied from above the substrate through the pipe 5. . When the gas flow rate and the pressure in the reactor become stable, plasma is applied by the high frequency power supply 7 to form a film by discharge. The unreacted gas is exhausted through a pipe by an exhaust device (such as a pump) outside the device. The substrate 1 on which the film is formed is peeled off by raising the substrate lifting pins 4 in the reactor 2 and is carried out of the vacuum chamber.

Conventionally, the charge of each gas decomposed after film formation is charged on the film, and static electricity is also generated on the back surface of the substrate when the glass substrate 1 is separated from the reactor 2. Since the static electricity is charged, the substrate is displaced by the static electricity during transport of the substrate, the substrate is broken by the substrate drop, the dielectric breakdown of the element formed on the glass substrate, the element characteristics are deteriorated, and the glass of the airborne foreign matter due to the static electricity. There were problems such as adsorption to the substrate. In order to prevent these, as a method of removing the charge of the glass substrate, a method of irradiating the glass substrate 1 with ions using an ionizer after carrying out the film formation and neutralizing the charged charge is usually performed. ing.

[0004]

However, in the above-mentioned conventional film forming apparatus, an ionizer must be provided separately from the film forming apparatus in order to remove electricity after film formation. In addition, since the ionizer is installed outside the apparatus, there is a problem that static elimination cannot be sufficiently performed immediately after film formation.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and has as its object to provide a method and an apparatus for manufacturing a semiconductor substrate capable of more effectively removing static electricity from the front and back surfaces of the substrate. I do.

[0006]

According to a method of manufacturing a semiconductor substrate according to the present invention, charges charged on a glass substrate are neutralized by plasma discharge using an inert gas to eliminate the charges.

An apparatus for manufacturing a semiconductor substrate according to the present invention comprises a vacuum vessel into which a substrate can be taken in and out, a gas supply system for supplying a plurality of gases, a vacuum exhaust system, and a substrate which is detachably mounted. Stage for controlling the temperature of the vacuum vessel, a high-frequency power supply for applying a high-frequency voltage to the vacuum vessel, supply and exhaust of gas, selection of gas, temperature control of the substrate, application of high-frequency voltage, Process time control means for controlling, introducing an inert gas after film formation of the substrate, applying high frequency voltage to generate plasma discharge, and neutralizing the charge on the substrate by the plasma discharge of the inert gas Then, the charge is removed.

[0008]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiment 1 Hereinafter, the present invention will be specifically described with reference to the drawings showing the embodiments.

FIG. 2 is a block diagram of a semiconductor substrate manufacturing apparatus according to the present invention, and shows a series of flow of a substrate manufacturing process.

First, a glass substrate 1 shown in FIG.
1, and is transported from here to an insulated vacuum chamber 12 by an atmospheric robot 14. Thereafter, after being kept warm and kept in a vacuum, it is transferred to the vacuum chamber 13 by the vacuum robot 15 and transferred to each reactor by the vacuum robot 15.

This manufacturing apparatus is provided with an exhaust device comprising a pipe and a pump shown in FIG. Further, a processing time control means (not shown) for performing temporal control of operations such as gas supply and exhaust, gas selection, substrate temperature control, and application of a high-frequency voltage is provided.

FIG. 1 shows a sectional view of the reactor 2. The equipment configuration of the reactor is the same as the conventional one. The glass substrate 1 transferred into the reactor 2 is held on the floor of the substrate mounting stage 16 and is heated by the heater 3 below the floor.
Heated to near 00 ° C. Then SiH ₄ , NH ₃ ,
A gas mixture of H ₂ , N _2, etc. is ejected to the entire substrate through the gas pipe 5. Also, the pressure inside the reactor,
When the gas flow rate is stabilized, a high voltage is applied by the high frequency power supply 7 and a film is formed on the glass substrate 1 by plasma discharge.

In FIG. 3, unreacted gas is exhaust gas 10
And is discharged out of the apparatus by a booster pump 8 and a dry pump 9.

When the film formation on the glass substrate is completed, the glass substrate 1 is lifted by the push-up pins 4 of the substrate and separated from the reactor 2. At that time, static electricity is generated by peeling,
The back surface of the glass substrate 1 is charged.

Thereafter, an inert gas such as He, N ₂ , H ₂ or the like is jetted through the gas pipe 5 to the entire inside of the reactor.

When the pressure and gas flow rate in the reactor are stabilized, a high voltage is applied by the high frequency power supply 7 to electrically neutralize the electric charges on the upper and lower surfaces of the glass by plasma discharge.

Although it has been difficult to supply ions to the back surface of the substrate by the conventional charge removal method using an ionizer, plasma discharge using an inert gas can be uniformly generated in the reactor space. Static electricity removal on the back surface can be easily and reliably performed. In addition, there is no need to use a separate device for static elimination, the static elimination can be performed using the film forming apparatus itself, and the process can be performed as an extension of the film forming process. Static electricity can be removed.

The glass substrate 1 from which the electric charge has been removed passes through the vacuum chamber 13 and the vacuum chamber 12 shown in FIG.

Embodiment 2 The plasma discharge may be performed at the same time as the gas is introduced. The charge removal processing time may be a time sufficient for charge removal, and the time control has a large degree of freedom and is easy to set.

The gas flow rate, gas type, gas mixture ratio,
Parameters such as the temperature inside the reactor, the pressure, and the applied power frequency of the high frequency power supply may be arbitrary. In the conventional ionizer method, the mechanism of canceling the charge of the substrate by the charge of the supply ions is used.Therefore, it is necessary to set the positive / negative balance of the supply ions and the processing time in a narrow range according to the charge amount and polarity of the substrate. However, static elimination by plasma discharge is close to the mechanism of discharge of electrification due to the conductivity of plasma gas, so that it is not necessary to set detailed conditions.

Embodiment 3 After the film is formed on the glass substrate, the substrate may be peeled off after the charge is removed once, and the charge may be removed again. Alternatively, the substrate may be peeled off during the charge removal without interrupting the charge removal. . Further, the number of times of static elimination and the neutralization conditions may be arbitrary. During the course of the peeling of the substrate, the charging voltage increases substantially in proportion to the distance of the peeling. However, according to the method of peeling the substrate during the neutralizing process, the neutralizing is performed immediately after the start of the peeling. The rise can be kept small.

[0022]

According to the present invention, the charge on the substrate after film formation by plasma discharge and the charge on the back surface of the substrate due to static electricity generated when the substrate is separated from the reactor are electrically controlled by plasma discharge with an inert gas. It can be neutralized to remove the charge.

[Brief description of the drawings]

FIG. 1 is a configuration diagram in a reactor showing one embodiment of a film forming apparatus according to the present invention.

FIG. 2 is an apparatus configuration diagram showing one embodiment of a film forming apparatus according to the present invention.

FIG. 3 is a schematic view showing an embodiment of a film forming apparatus according to the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Glass substrate 2 Reactor 3 Heater 4 Substrate push-up pin 5 Gas pipe 6 Gas ejection state 7 High frequency power supply 8 Booster pump 9 Dry pump 10 Exhaust pipe (pump pipe) 11 Cassette 12 Heat-retention vacuum chamber 13 Vacuum chamber 14 Atmospheric robot 15 Vacuum robot 16 Substrate mounting stage

Claims (4)

[Claims] 1. A method for manufacturing a semiconductor substrate, comprising: neutralizing charges charged on a glass substrate by plasma discharge using an inert gas to eliminate the charges. 2. After the completion of the film forming process, the charge on the substrate surface is removed, and then the substrate is peeled off from the mounting stage.
2. The method for manufacturing a semiconductor substrate according to claim 1, wherein static electricity on the back surface of the substrate is removed. 3. After the completion of the film formation, static elimination of the substrate surface is performed,
2. The method for manufacturing a semiconductor substrate according to claim 1, wherein the substrate is peeled off from the mounting stage to remove the charge on the back surface of the substrate while the charge removal is continued. 4. A vacuum container capable of taking a substrate in and out, a gas supply system for supplying a plurality of types of gases, a vacuum exhaust system,
A substrate mounting stage for detachably mounting a substrate to control temperature, a high-frequency power supply for applying a high-frequency voltage in the vacuum vessel, gas supply and exhaust, gas selection, substrate temperature control, high-frequency voltage Processing time control means for performing temporal control of an operation including application of an inert gas is introduced after the formation of the substrate, a high-frequency voltage is applied to generate a plasma discharge, and the plasma discharge of the inert gas An apparatus for manufacturing a semiconductor substrate that neutralizes the charge on the substrate and removes the charge.