JP2000183060A - Manufacturing equipment and method of semicondcutor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain an oxide nitride film which is uniformly high in nitrogen concentration by a method wherein a high-temperature gas layer formed above a processed substrate is lessened in thickness. SOLUTION: A wafer 8 is introduced into a processing chamber 4 and then placed on a susceptor 9. Then, the wafer 8 is held with the susceptor 9, and a reaction chamber 5 is isolated from the outside air. Then, a valve 23 is opened, a pump 24 is driven, and the valve 18 is opened to feed a mixed gas of oxidizing gas and nitriding gas into the reaction chamber 5 through a flowmeter 19 from an oxidizing gas source 16 and a nitriding gas source 17. In succession, the susceptor 9 and the wafer 8 are rotated with a rotating mechanism 3 whose rotational speed is controlled by a rotation control mechanism 10. When the feed of a mixed gas and the rotational speed of the susceptor 9 become constant, then the wafer 8 is quickly raised in temperature as it is irradiated with light rays from light sources 7 which are controlled in output power by a lamp power controller 6. Thereafter, the wafer is made to drop quickly in temperature, a mixed gas is stopped, the susceptor 9 is stopped from being rotated, and a process is finished.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for manufacturing a semiconductor device and an apparatus for manufacturing a semiconductor device, and more particularly to a method for manufacturing a semiconductor device for forming a gate insulating film of a MOS transistor and an apparatus for manufacturing a semiconductor device.

[0002]

2. Description of the Related Art Conventionally, magnetic disk storage devices have been widely used as storage devices for information processing devices. However, magnetic disk storage devices are vulnerable to shock because they require extremely precise mechanical drive mechanisms. Further, in a magnetic disk storage device, a magnetic head and a storage medium must be mechanically operated to record information on the storage medium and read information from the storage medium. Therefore, high-speed access is not possible with a magnetic disk storage device.

On the other hand, a semiconductor memory device does not have a mechanically driven portion, so that it is resistant to impact and can be accessed at high speed. Therefore, in recent years, the demand for semiconductor memory devices has been increasing, and accordingly, research and development on semiconductor memory devices have been actively pursued.

Research and development on semiconductor memory devices has been mainly directed to miniaturization of memory cells due to advances in microfabrication technology. That is, the memory capacity is improved by proportionally reducing the size of the memory cell. In such miniaturization of the memory cell, it is natural that the gate insulating film is also required to be thinner. However,
The thinning of the gate insulating film has caused problems regarding the reliability of the gate insulating film and the performance of the transistor.

Incidentally, even in a nonvolatile memory in which a memory cell is constituted by a transistor having a thin gate insulating film through which a tunnel current flows, that is, a transistor having a tunnel insulating film, the thickness of the tunnel insulating film has been reduced in accordance with high integration. Tend to be.

However, since a high electric field stress is applied to the tunnel insulating film as the thickness of the tunnel insulating film is reduced, an increase in leakage current flowing in a low electric field region—stress leakage current—is a serious problem. . Also, there are concerns about an increase in electron traps caused by application of a high electric field stress and a decrease in the amount of charge that can flow through the insulating film—that is, a decrease in Qbd characteristics.

In order to solve such a problem, an oxynitride film is used as a tunnel insulating film instead of a silicon oxide film. In the silicon oxynitride film, unlike the silicon oxide film, the weak Si—O bond is modified by nitrogen. Therefore, it is considered that the use of the oxynitride film as the tunnel insulating film is effective in suppressing the occurrence of electron traps and the increase in stress current due to the application of high electric field stress. However, the oxynitride film formed by the conventional method does not have sufficient characteristics.

For example, the oxynitride film serving as the tunnel insulating film is formed by forming a silicon oxide film on the back surface of a silicon wafer, nitriding using an ammonia (NH 3) gas, and then performing annealing using an oxygen gas. Can be formed. According to this method, nitrogen, which is important for improving the reliability of the oxynitride film, can be introduced at a high concentration throughout the film.

[0009]

However, in this method, hydrogen is also introduced along with the introduction of nitrogen in the film in the nitriding process. Most of the introduced hydrogen is desorbed in the next oxidation process, but a part of the hydrogen remains in the film. Hydrogen remaining in the film causes dielectric breakdown, formation of electron traps, and an increase in stress leak current. Therefore, a process for forming an oxynitride film in a hydrogen-free manner instead of a process using ammonia is desired.

As such a process, a process using nitrogen monoxide (N 2 O) gas and a process using nitric oxide (N 2 O)
A process using O) gas and oxygen (O2) gas is known.

According to the process using the N2O gas, for example, the N2O gas is supplied to the surface of the silicon wafer heated to about 950.degree. The N 2 O gas that has reached the vicinity of the wafer surface is heated and thermally decomposed into nitrogen (N 2) gas, oxygen (O 2) gas, and nitric oxide (NO) gas (for example, the temperature of the wafer is 950 ° C.). Case 6
4.3% N2 gas, 31.3% O2 gas, 4.7%
NO gas is generated). According to this process, N2
Oxidizing species O2 generated by thermal decomposition of O and a small amount of nitriding species N
An oxynitride film is formed using O. However, in this method, the generation amount of NO gas, which is a nitriding species, is extremely small. Therefore, a sufficient amount of nitrogen cannot be introduced into the film.

On the other hand, in a process using NO gas and O 2 gas, an oxynitride film is formed by supplying NO gas and O 2 gas to the surface of a heated wafer. According to this method, unlike the case where N2O gas is used, it is considered that a sufficient amount of NO gas can be supplied. However, actually, before NO and O2 reach the wafer surface, a gas phase reaction represented by the following reaction formula: 2NO + O2 → 2NO2 occurs. As a result, much of the NO gas is consumed for the generation of NO2 that is not involved in nitriding the wafer surface, and the NO concentration near the wafer surface decreases. Therefore, even in this method, it is difficult to increase the nitrogen concentration in the film as in the case of using N2O gas.

[0013]

SUMMARY OF THE INVENTION It is an object of the present invention to provide a method of manufacturing a semiconductor device having an oxynitride film containing nitrogen at a high concentration, and a manufacturing apparatus for manufacturing such a semiconductor device. I do.

Another object of the present invention is to provide a method of manufacturing a semiconductor device having an oxynitride film having a sufficiently uniform nitrogen concentration and a manufacturing apparatus for manufacturing such a semiconductor device.

Still another object of the present invention is to provide a manufacturing method capable of manufacturing a semiconductor device having a gate insulating film having excellent electric characteristics, and a manufacturing apparatus for manufacturing such a semiconductor device. I do.

According to one aspect of the present invention, there is provided a step of supplying an oxidizing gas and a nitriding gas to one main surface of a semiconductor substrate while heating the substrate, thereby oxynitriding a surface region of the substrate. Then, the supplying step includes a first region in which a gas phase above one main surface of the substrate has a substantially uniform temperature in a direction perpendicular to the one main surface of the substrate; And a second region having a higher temperature gradient on the substrate side than on the first region side, and from one main surface of the substrate to the first gas region and the second gas region. A semiconductor device manufacturing method performed so that the distance to the interface with the gas region is 9.5 cm or less.

According to another aspect of the present invention, a step of supplying an oxidizing gas and a nitriding gas to one main surface of a semiconductor substrate while heating the substrate, thereby oxynitriding a surface region of the substrate. Wherein the supply step is performed such that the temperature of the gas phase above the one main surface of the substrate is 900 ° C. or less at a distance of 1.5 cm from the one main surface of the substrate. A method for manufacturing a device is provided.

According to still another aspect of the present invention, a processing chamber having a processing chamber formed therein and having an inlet and an outlet located below the inlet, and rotatably disposed in the processing chamber for processing. A holder that holds a substrate to be placed, a light source that is disposed to face the substrate held by the holder, and heats the substrate by irradiating the substrate with light, and an inlet in the processing chamber and the substrate held by the holder. And a shower head for supplying the gas introduced from the inlet to one main surface of the substrate substantially uniformly.

According to yet another aspect of the present invention, a processing chamber having an inlet and an outlet positioned at substantially the same level as the inlet, the processing chamber being formed therein, and a processing chamber disposed and processed in the processing chamber. There is provided an apparatus for manufacturing a semiconductor device, comprising: a holder for holding a substrate to be formed; and a light source arranged to face the substrate held by the holder and heating the substrate by irradiating the substrate with light.

[0020]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in more detail with reference to the drawings. In each of the drawings, similar members are denoted by the same reference numerals, and redundant description will be omitted. FIG. 1 is a diagram showing an apparatus for manufacturing a semiconductor device according to a first embodiment of the present invention. Manufacturing apparatus 1-1 shown in FIG.
Is a cold wall type single-wafer lamp annealing apparatus.

The apparatus 1-1 has a structure in which a processing vessel 4 is arranged on a base 2 via a rotating mechanism 3. The processing chamber 4 has a processing chamber 5 formed therein, and has a plurality of light sources 7 connected to a lamp power controller 6 at an upper inside thereof. These light sources 7
Is a tungsten halogen lamp, for example, and can raise the temperature of a wafer 8 described later at an arbitrary speed, for example, 100 ° C./sec or less.

The processing container 4 includes a wafer 8 as a semiconductor substrate.
Is accommodated. The susceptor 9
It is rotatably supported by the rotation mechanism 3 connected to the rotation control mechanism 10. The rotation mechanism 3 is, for example, 0 rpm to 10 rpm.
The susceptor 9 can be rotated at a speed of 000 rpm. The arrow 11 indicates the rotation direction of the wafer 8 and the susceptor 9.

A pyrometer 30 is accommodated in the susceptor 9, and the temperature of the wafer 8 can be measured by a temperature measuring mechanism 31 connected to the pyrometer 30. The temperature measurement mechanism 31 is connected to the lamp power controller 6, and the obtained temperature data of the wafer 8 is used for adjusting the power supplied to the light source 7.

A shower head 12 is provided above the processing vessel 4.
Is provided. The shower head 12 is for uniformly supplying an oxidizing gas and a nitriding gas, which will be described later, to the surface of the wafer 8, and is usually a plate-like body provided with many holes.

An inlet 13 is provided at an upper portion of the processing container 4. An oxidizing gas source 16 and a nitriding gas source 17 are connected to the inlet 13 via a pipe 15. The pipe 15 is provided with a valve 18 and a flow meter 19, and can supply an oxidizing gas and a nitriding gas at desired flow rates into the processing chamber 5.

An outlet 21 is provided below the processing container 4. A pipe 22 is connected to the outlet 21.
Is connected. The piping 22 is provided with a pressure control valve 23 and a pump 24, which can discharge the gas to the outside while controlling the gas pressure in the processing chamber 5.

The apparatus 1-1 shown in FIG.
A temperature measuring probe 35 and a temperature measuring device 36 connected to the probe 35 are provided in the inside so as to be movable in the vertical direction in the figure. These are used to set processing conditions,
The temperature of the gas phase above the wafer 8 is measured. Therefore, these are unnecessary after the processing conditions are determined, and are usually removed from the apparatus 1-1.

The manufacture of a semiconductor device using the above-described device 1-1 is performed, for example, by the following method. First,
A silicon wafer is transferred as a semiconductor wafer 8 into the processing container 4 and placed on the susceptor 9. Next, the wafer 8 is held by the susceptor, and the reaction chamber 5 is isolated from the outside air. After that, the valve 23 is opened to drive the pump 24 and the valve 18 is opened, and the oxidizing gas source 16 is
A mixed gas of an oxidizing gas and a nitriding gas is supplied from the nitriding gas source 17 into the reaction chamber 5. As the oxidizing gas, oxygen (O2) gas or the like can be used, and as the nitriding gas, nitrogen monoxide (NO) gas or the like can be used.

Along with the supply of the mixed gas, the susceptor 9 and the wafer 8 are rotated by the rotation mechanism 3 while the rotation control mechanism 10 controls the rotation speed to, for example, 3000 rpm. After the supply amount of the mixed gas and the rotation speed of the susceptor 9 become constant, the wafer 8 is heated at a high speed by irradiating the wafer 8 with light from a plurality of light sources 7 while controlling the power by the lamp power controller 6. The temperature of the wafer 8 is
The lamp power controller 6 monitors the temperature of the wafer 8 at, for example, 50 ° C./sec based on the measured values.
The power supplied to the light source 7 is controlled so that

The temperature of the wafer 8 is equal to a set value—for example, 1050
When the temperature reaches ° C., the temperature is maintained, for example, for 60 seconds. This set value is usually in the range of 1000C to 1200C.

Thereafter, the power supplied to the light source 7 is reduced, and the temperature of the wafer 8 is rapidly lowered. When the temperature of the wafer 8 is
For example, when the temperature reaches about 200 ° C., the supply of the mixed gas and the rotation of the susceptor 9 are stopped to end the process.
By such a method, for example, a 6 m-thick gate insulating film of a MOS transistor is formed on the element region of the wafer 8.
An m-thick oxynitride film can be formed.

The distribution of nitrogen concentration in the oxynitride film formed as described above was examined. The result is shown in FIG. FIG.
FIG. 3 is a diagram schematically showing a nitrogen concentration distribution in an oxynitride film formed by the method according to the first embodiment of the present invention. In the figure, a curve 41 indicates the nitrogen concentration. As shown in FIG. 2, when an oxynitride film is formed by the process of the present embodiment,
Nitrogen is distributed almost uniformly in the film without being localized near the silicon substrate / oxynitride film interface.

The nitrogen concentration in the oxynitride film formed by the above method changes according to the rotation speed of the susceptor 9 and the wafer 8. This will be described with reference to FIG. FIG. 3 is a graph showing the relationship between the rotation speed of the wafer 8 and the nitrogen concentration in the oxynitride film. In the figure, the horizontal axis indicates the rotation speed of the wafer 8, and the vertical axis indicates the nitrogen concentration in the oxynitride film. Note that the nitrogen concentration is shown as a relative value to the nitrogen concentration of the standard sample.

As shown in FIG. 3, the number of rotations of the wafer 8 is 1
If it is less than 00 rpm, the nitrogen concentration in the oxynitride film is extremely low and almost constant. On the other hand, when the rotation speed of the wafer 8 is 100 rpm or more, the nitrogen concentration increases as the rotation speed increases. That is, the number of rotations of the wafer 8 is set to 1
By setting the rotation speed to 00 rpm or more, nitrogen can be introduced into the oxynitride film at a desired concentration.

Although the upper limit of the number of rotations of the wafer 8 is not particularly limited, the nitrogen concentration does not greatly increase even when the number of rotations is increased to be higher than about 10,000 rpm. Therefore, the rotation speed of the wafer 8 is 100 rpm to 10000 r.
In controlling within the range of pm, the nitrogen concentration is shown as a relative value.

As shown in FIG. 7, by increasing the nitrogen concentration in the oxynitride film, the amount of electron traps can be reduced. That is, by appropriately controlling the number of rotations of the wafer 8, an oxynitride film in which the generation of electron traps during stress application is suppressed can be formed.

Next, the relationship between the hydrogen concentration in the oxynitride film and the amount of generated electron traps was examined. That is, by subjecting the silicon oxide film to NH3 nitridation and subsequently performing annealing using oxygen gas under various conditions, the amount of hydrogen added is changed to form a plurality of oxynitride films, and a predetermined stress is applied to each of them. The amount of electron traps generated during the process was examined. FIG. 8 shows the result.

FIG. 8 shows an apparatus 1 according to the first embodiment of the present invention.
4 is a graph showing a relationship between a hydrogen concentration of the oxynitride film formed according to -1 and electric characteristics. In the figure, the horizontal axis shows the hydrogen concentration in the oxynitride film, and the vertical axis shows the amount of electron traps generated. In FIG. 8, the hydrogen concentration is shown as a relative value.

As is apparent from FIG. 8, the amount of generated electron traps increases as the hydrogen concentration in the film increases. According to the method according to this embodiment, a gas that does not contain hydrogen, such as oxygen or nitrogen monoxide (NO), can be used for each of the oxidizing gas and the nitriding gas. Therefore, according to the method of this embodiment, an oxynitride film having an extremely low hydrogen concentration can be formed.

In the first embodiment, the wafer 8 is formed to form an oxynitride film containing nitrogen at a high concentration and uniformly.
Has been rotated, but other methods can be used. In the second embodiment described below, an oxynitride film containing nitrogen at a high concentration and uniformly is formed by supplying the mixed gas in parallel to the wafer 8 at a high speed.

FIG. 9 is a view showing an apparatus for manufacturing a semiconductor device according to the second embodiment of the present invention. Manufacturing apparatus 1 shown in FIG.
Reference numeral -2 denotes a cold wall type single-wafer lamp annealing apparatus.

The apparatus 1-2 has a structure in which a processing vessel 4 is arranged on a base 2. Processing container 4
Has a processing chamber 5 formed therein, and has a plurality of light sources 7 connected to a lamp power controller 6 at an upper portion inside.

The processing container 4 contains a susceptor 9 for holding a wafer 8. In the device 1-2, the device 1-
Unlike 1, the susceptor 9 is not rotatably provided. A pyrometer 30 is accommodated in the susceptor 9, and a temperature measurement mechanism 31 connected to the pyrometer 30 is provided.
Thus, the temperature of the wafer 8 can be measured. The temperature measurement mechanism 31 is connected to the lamp power controller 6,
The obtained temperature data of the wafer 8 is used for adjusting the power supplied to the light source 7.

The processing container 4 has an inlet 13 and an outlet 21 at substantially the same level as the wafer 8.
Is provided so as to sandwich it. An oxidizing gas source 16 and a nitriding gas source 17 are connected to the inlet 13 via a pipe 15. The pipe 15 is provided with a valve 18 and a flow meter 19, and can supply an oxidizing gas and a nitriding gas at desired flow rates into the processing chamber 5. Further, a pipe 22 is connected to the outlet 21.
The pipe 22 is provided with a pressure control valve 23 and a pump 24 so that the gas in the processing chamber 5 can be exhausted to the outside.

The manufacture of a semiconductor device using the above-described device 1-2 is performed, for example, by the following method. First,
The wafer 8 is transported into the processing container 4 and placed on the susceptor 9. Next, the wafer 8 is held by the susceptor, and the reaction chamber 5 is isolated from the outside air. Thereafter, the valve 23 is opened, the pump 24 is driven to evacuate, and the valve 18 is opened. The flow meter 19 is used to oxidize the oxidizing gas from the oxidizing gas source 16 and the Supply mixed gas with neutral gas. At this time, the flow rate of the mixed gas is set to a high speed (for example, about 3140 cm / sec or more).

After the flow rate of the mixed gas becomes constant, the wafer 8 is heated at a high speed by irradiating the wafer 8 with light from a plurality of light sources 7 while controlling the power by the lamp power controller 6. The temperature of the wafer 8 is measured by a pyrometer 30.
The lamp power controller 6 controls the power supplied to the light source 7 based on the measured value so that the temperature rise rate of the wafer 8 becomes a predetermined value.

When the temperature of the wafer 8 reaches the set value, the temperature is maintained for a predetermined time. Thereafter, the power supplied to the light source 7 is reduced, and the temperature of the wafer 8 is rapidly lowered. When the wafer 8 has been sufficiently cooled, the supply of the mixed gas is stopped to end the process. With such a method, an oxynitride film can be formed.

The conditions for forming the oxynitride film using the apparatus 1-2 were examined in the same manner as in the first embodiment, and the flow rate of the mixed gas was set to 1.05 × 102 cm / sec.
By controlling the thickness to not less than c, the thickness of the second region 52 described with reference to FIG. 7 is controlled to 9.5 cm or less, or the thickness of the gas phase region at 900 ° C. or more is controlled to 1.5 cm or less. As a result, the nitrogen concentration in the oxynitride film could be increased. In addition, it was found that the oxynitride film containing nitrogen almost uniformly can be obtained also in the method according to the second aspect.

[0049]

As described above, according to the present invention,
By reducing the thickness of the hot gas layer formed above the substrate to be processed, unwanted gas phase reactions between the oxidizing gas and the nitriding gas are suppressed. Therefore, a sufficient amount of nitriding gas can be constantly supplied to the surface of the substrate. Therefore, according to the present invention, an oxynitride film containing nitrogen at a high concentration and uniformly can be obtained.

According to the present invention, an oxynitride film containing nitrogen at a high concentration can be obtained without using a compound containing hydrogen as a raw material. Therefore, the oxynitride film obtained according to the present invention not only contains a high concentration of nitrogen but also hardly contains hydrogen. Therefore, according to the present invention, high reliability can be realized by using such an oxynitride film as a tunnel insulating film.
That is, according to the present invention, it is possible to manufacture a semiconductor device having a gate insulating film having excellent electrical characteristics.

[Brief description of the drawings]

FIG. 1 is a diagram showing a manufacturing apparatus according to a first embodiment of the present description.

FIG. 2 is a diagram schematically showing a nitrogen concentration distribution in an oxynitride film formed by a method according to a first embodiment of the present description.

FIG. 3 is a graph showing the relationship between the rotational speed of the wafer and the nitrogen concentration in the nitrided film in the oxynitride film in the method according to the first embodiment of the present description.

FIG. 4 is a diagram schematically showing a gas phase state in a processing chamber of the manufacturing apparatus according to the first embodiment of the present description.

FIG. 5 is a graph showing a gas phase temperature observed in a processing chamber of the manufacturing apparatus according to the first embodiment of the present description.

FIG. 6 is a graph showing a gas phase temperature observed in a processing chamber of the manufacturing apparatus according to the first embodiment of the present description.

FIG. 7 is a graph showing the relationship between the nitrogen concentration and the electrical characteristics of the oxynitride film formed by the manufacturing apparatus according to the first embodiment of the present description.

FIG. 8 is a graph showing the relationship between the hydrogen concentration and the electrical characteristics of the oxynitride film formed by the manufacturing apparatus according to the first embodiment of the present invention.

FIG. 9 is a view showing a manufacturing apparatus according to a second embodiment of the present invention.

[Explanation of symbols]

 1-1: Semiconductor device manufacturing apparatus 2: Substrate 3: Rotating mechanism 4: Processing container 7: Light source 8: Wafer

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI theme coat ゛ (Reference) H01L 29/788 29/792

Claims (20)

[Claims] 1. A step of supplying an oxidizing gas and a nitriding gas to one main surface of a semiconductor substrate while heating the substrate, thereby oxynitriding a surface region of the substrate. The step of performing the first step, wherein a gas phase above one main surface of the substrate has a first region in which a temperature is substantially uniform in a direction perpendicular to the one main surface of the substrate; A second region having a higher temperature gradient on the substrate side than on the first region side, and the first region is formed from one main surface of the substrate. A method for manufacturing a semiconductor device, wherein the method is performed such that a distance between an interface between a gas region and the second gas region is 9.5 cm or less. 2. The method according to claim 1, wherein the substrate is a silicon substrate. 3. The method according to claim 1, wherein the substrate is heated by light irradiation. 4. The method according to claim 1, wherein the supplying step is performed such that the temperature of the gas phase is 900 ° C. or less at a position at a distance of 1.5 cm from one main surface of the substrate. 2. The method for manufacturing a semiconductor device according to item 1. 5. The method according to claim 1, wherein the supplying step includes:
The method according to claim 1, wherein the method is performed while heating to 0 ° C. or more. 6. The method according to claim 1, wherein the supplying step is performed such that the temperature of the gas phase is 900 ° C. or less at a position at a distance of 1.5 cm from one main surface of the substrate. 6. The method for manufacturing a semiconductor device according to item 5. 7. The method according to claim 1, wherein the oxidizing gas is an oxygen gas, and the nitriding gas is a nitric oxide gas. 8. The method according to claim 1, wherein the oxidizing gas and the nitriding gas are supplied as a mixed gas thereof to one main surface of the substrate. 9. The method according to claim 1, wherein the supplying is performed while rotating the substrate. 10. The method according to claim 9, wherein the rotation speed of the substrate is 100 rpm or more. 11. The semiconductor device according to claim 1, wherein the oxidizing gas and the nitriding gas are supplied as a mixed gas thereof in a direction parallel to one main surface of the substrate. Production method. 12. The flow rate of the mixed gas is 1.05 × 10
12. The pressure is 2 cm / sec or more.
13. The method for manufacturing a semiconductor device according to item 5. 13. A processing container having a processing chamber formed therein and having an inlet and an outlet located below the inlet, and a holder rotatably disposed in the processing container and holding a substrate to be processed. And a light source arranged to face the substrate held by the holder and heating the substrate by irradiating the substrate with light, and between the inlet in the processing chamber and the substrate held by the holder. And a shower head for supplying the gas introduced from the inlet to one main surface of the substrate substantially uniformly. 14. The apparatus according to claim 13, further comprising a driving mechanism for rotating the holder. 15. The driving mechanism moves the holder to 100r.
The apparatus for manufacturing a semiconductor device according to claim 14, wherein the semiconductor device can be rotated at a speed of not less than pm. 16. The apparatus according to claim 13, further comprising a gas supply source connected to said processing chamber via said inlet, for supplying an oxidizing gas and a nitriding gas into said processing chamber. An apparatus for manufacturing a semiconductor device according to claim 1. 17. A processing chamber having a processing chamber formed therein and having an inlet and an outlet located at a level substantially equal to the inlet, and a processing chamber disposed in the processing chamber and holding a substrate to be processed. An apparatus for manufacturing a semiconductor device, comprising: a holder; and a light source arranged to face the substrate held by the holder and heating the substrate by irradiating the substrate with light. 18. The semiconductor manufacturing apparatus according to claim 17, wherein said holder positions said substrate between said inlet and said outlet at least during processing of said substrate. 19. The semiconductor manufacturing apparatus according to claim 18, wherein said holder positions said substrate at a level substantially equal to said inlet and said outlet at least during processing of said substrate. 20. The apparatus according to claim 19, further comprising a gas supply source connected to the processing chamber via the inlet, for supplying an oxidizing gas and a nitriding gas into the processing chamber. The semiconductor manufacturing apparatus according to the above.