JP2000183028A - Processing apparatus and process system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a processing device and a processing system, wherein the temperature of an object to be temperature adjusted is controlled uniformily, when the object is subjected to a prescribed processing. SOLUTION: A placement stage 17, on which a wafer 2 is placed, is provided at the lower part of a process chamber 14 of a processing apparatus 5. In the placement stage 17, a temperature-adjusting means 19 for adjusting the temperature of the wafer 2 is provided. The temperature adjusting means 19 is provided with a plurality of arrayed flow channels, a fluid of a specified temperature flowing in the flow channel, and a heat-shielding member 22 provided between flow channels. A fluid is supplied in flow channels 20a and 20b, so that the fluid flowing in the flow channel 20a and that flowing in the flow channel 20b flow in directions different from each other.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a processing apparatus and a processing system, and more particularly to a processing apparatus and a processing system for uniformly controlling the temperature of an object to be processed during surface processing such as etching.

[0002]

2. Description of the Related Art In a semiconductor manufacturing process, for example, in an etching apparatus, an upper electrode and a lower electrode are provided above and below in a processing chamber so as to face each other, and a wafer is mounted on a lower electrode also serving as a mounting table. . Then, while introducing an etching gas into the processing chamber, for example, high-frequency power is applied to the lower electrode to generate plasma between the upper electrode and the lower electrode. Then, the etching gas is dissociated by the plasma, and the wafer is etched by the radical components generated by the dissociation.

Since the etching process is greatly affected by the temperature, it is necessary to make the temperature of the entire surface of the wafer to be etched as uniform as possible. A shower head (upper electrode) for introducing gas onto the wafer;
For the same reason, it is necessary to make the temperature of the side wall of the processing chamber as uniform as possible.

In order to control the temperature, for example, in order to make the temperature of the entire surface of the wafer uniform, a temperature control means is provided in the lower electrode serving as a mounting table. FIG. 9 shows a schematic diagram of the temperature control means. As shown in FIG. 9, the temperature control means includes a substantially annular flow path 62 corresponding to the shape of the wafer 61,
The fluid 63 has a predetermined temperature and flows through the channel 62. Then, the wafer 6 is formed by the fluid 63.
1 is changed to a predetermined temperature.

[0005] However, the fluid 63 in the flow channel 62 flows in one direction, and the temperature of the fluid 63 changes while the fluid 63 flows in the flow channel 62. Therefore, the flow path 62
The temperature of the fluid 63 is different between the inlet side and the outlet side of the wafer 61, and when the temperature of the wafer 61 after the temperature adjustment is measured, as shown in FIG. Was.

In order to solve such a problem, for example, according to Japanese Patent Application Laid-Open No. Hei 4-301078, a cooling water pipe in a chamber wall of a film forming chamber for forming a thin film is alternately provided with a cooling water inlet and outlet at regular intervals. It has been proposed that by changing the direction of the cooling water flow of the cooling water pipe periodically to prevent the temperature unevenness of the film forming chamber wall and to cool the film to a uniform temperature. According to Japanese Patent Application Laid-Open No. 4-277618, a wafer support for holding a semiconductor wafer during heat treatment is formed, for example, in the form of a double hollow ring in contact with each other, and the flow of fluid inside the wafer is reversed. Thus, it has been proposed that the temperature in the wafer surface can be controlled uniformly.

[0007]

However, even if the direction of the cooling water flow in the cooling water pipe is periodically reversed, the cooling water is not removed due to the period of this reversal and the time deviation for reversing the direction of the cooling water flow. It is difficult to control the temperature of the cooling water uniformly, and it is difficult to make the temperature of the cooling water flowing in the cooling water pipe uniform. For this reason, it has been difficult to uniformly control the temperature of the film forming chamber wall.

On the other hand, even if the gas flows inside the wafer support formed in a double hollow ring shape are opposite to each other,
Interference due to heat conduction occurs between the rings, and it is difficult for the temperature of the gas to be uniform. For this reason, it has been difficult to uniformly control the temperature within the wafer surface.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to control the temperature of a processing target or the like to be subjected to temperature adjustment when performing predetermined processing on the processing target. An object of the present invention is to provide a processing apparatus and a processing system that can be controlled uniformly.

[0010]

In order to solve the above-mentioned problems, a processing apparatus according to the present invention includes a mounting table on which a processing object is mounted in a lower portion of a processing chamber, and a predetermined processing operation is performed on the processing object. In the processing apparatus, the mounting table is provided with temperature control means for controlling the temperature of the object to be processed, the temperature control means includes a plurality of flow passages arranged in a line, and a predetermined flow through the flow passages. A fluid having a temperature and a heat insulating member disposed between the flow paths, wherein the fluid flowing in one flow path and the fluid flowing in an adjacent flow path flow in different directions. The fluid is supplied into the inside.

In a processing apparatus according to the present invention, a mounting table for mounting an object to be processed is disposed in a lower portion of a processing chamber, and a predetermined process is performed on the object to be processed. Has a temperature control means for controlling its temperature,
The temperature control unit includes a plurality of flow paths arranged in a line, a fluid having a predetermined temperature flowing in the flow paths, and a heat insulating member disposed between the flow paths, and flows in one flow path. The fluid is supplied into the flow path such that the fluid and the fluid flowing in the flow path adjacent to the fluid flow in different directions.

Further, in the processing apparatus of the present invention, a mounting table for mounting an object to be processed is arranged at a lower portion in the processing chamber, and a shower head is arranged so as to face the mounting table, and a predetermined position is set on the object to be processed. In the processing apparatus for performing the above processing, the shower head is provided with temperature adjusting means for adjusting the temperature, the temperature adjusting means includes a plurality of flow passages arranged in a line, and a predetermined temperature flowing in the flow passages. Fluid, and a heat insulating member disposed between the flow paths, so that the fluid flowing in one flow path and the fluid flowing in an adjacent flow path flow in different directions. The fluid is supplied to the fin.

According to the processing apparatus of the present invention, a heat insulating member is provided between the flow paths of the temperature control means provided on the object to be temperature controlled, and heat is transferred between the fluids flowing in the flow paths. No interference occurs. Further, even if the fluid flowing in one flow path and the fluid flowing in the adjacent flow path flow in different directions, and the temperature of the fluid flowing in the flow path changes due to the object of temperature adjustment,
The temperature of the fluid flowing through the entire flow path becomes substantially uniform, and the temperature of the object is controlled uniformly.

If the temperature control means is provided with temperature control means for measuring the temperature of the object to be temperature-controlled and changing the temperature of the fluid flowing in the flow path based on the measured temperature, the temperature of the measured object can be reduced. Accordingly, the temperature of the fluid flowing in the flow path is changed, and the temperature of the object is reliably controlled to a predetermined temperature.

In the processing apparatus of the present invention, a cassette accommodating section accommodating a cassette capable of accommodating a plurality of objects to be processed, and a transport section for transporting the object between the cassette accommodating section and the processing apparatus. Is provided, the processing system has the above-described operation.

[0016]

DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) A first embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is a schematic diagram showing a processing system according to the present invention.

As shown in FIG. 1, a processing system 1 includes a cassette housing section 4 for housing a cassette 3 containing a wafer 2 as an object to be processed in an air atmosphere, and a predetermined processing for the wafer 2 under vacuum. And a transfer unit 6 for transferring the wafer 2 between the cassette housing unit 4 and the processing device 5.
Is provided.

The cassette accommodating section 4 is composed of a plurality of accommodating chambers 7 formed in a rectangular shape as a whole. In the present embodiment, four accommodation rooms 7 are provided side by side. A cassette 3 containing a plurality of, for example, 25 wafers 2 is accommodated in the accommodation room 7.

The processing apparatus 5 includes, for example, an etching apparatus for ejecting a processing gas to the wafer 2 to perform predetermined processing,
Various processing devices such as a D device are arranged. In the present embodiment, three processing devices 5 are arranged.

The transport section 6 is disposed between the cassette accommodating section 4 and the processing device 5. In the present embodiment, the transfer section 6 includes a transfer chamber 8 in contact with the cassette housing section 4, a vacuum chamber 9 in contact with the processing device 5, and a load lock connecting the transfer chamber 8 and the vacuum chamber 9. And a room 10. As described above, the plurality of (three) processing apparatuses 5 are arranged in the processing system 1 because the transfer chamber 8, the vacuum chamber 9, and the load lock chamber 10 are arranged.
The space (vacuum chamber 9) for transporting the wafer 2 is evacuated, and the space (load lock chamber 10) connecting the vacuum chamber 9 and the space (transfer chamber 8) for transporting the wafers 2 from the cassette housing section 4 to each other. This is because it is necessary to provide. Therefore, the transfer chamber 8, the load lock chamber 10, and the load lock chamber 1
A gate valve 11 that can be automatically opened and closed by a drive mechanism (not shown) is provided at the loading / unloading port of the vacuum chamber 9 and the vacuum chamber 9 and the loading / unloading port of the processing apparatus 5 so that each chamber can be sealed. . Then, the cassette housing section 4 and the load lock chamber 1 are moved by the first transfer arm 12 disposed in the transfer chamber 8.
The transfer of the wafer 2 between 0 and 0 is performed, and the transfer of the wafer 2 between the load lock 10 chamber and the processing apparatus 5 is performed by the second transfer arm 13 arranged in the vacuum chamber 9.

Next, the processing apparatus according to the present invention will be described with reference to an example in which an etching apparatus is used as the processing apparatus 5. FIG. 2 is a schematic sectional view of the etching apparatus. As shown in FIG. 2, a processing vessel 15 forming a processing chamber 14 of an etching apparatus 5 as a processing apparatus is formed in a substantially cylindrical shape made of, for example, aluminum. The processing container 15 is preferably formed in a shape corresponding to the processing target. For example, when the processing target is a liquid crystal display substrate (LCD substrate), the processing container 15 is formed in a square shape. At the lower part of the processing container 15, a mounting table 17 made of, for example, aluminum for mounting the wafer 2 is disposed via an insulating material 16 such as ceramic.

The mounting table 17 is formed in a disc shape with a convex upper surface at the center, and the wafer 2 is mounted at the center of the upper surface. It is preferable that the mounting table 17 also has a shape corresponding to the object to be processed.
In the case of a CD substrate, it is formed in a square shape. The wafer 2 is held by an electrostatic chuck 18 having substantially the same diameter as the wafer 2. The electrostatic chuck 18 is constituted by an electrostatic chuck sheet in which a conductive film is sandwiched between two insulating films (not shown). When a high voltage is applied to the conductive film, the wafer 2 is attracted and held by Coulomb force. Is configured. For holding the wafer 2, for example, the wafer 2 may be mechanically held by a clamp member, but it is preferable to use the electrostatic chuck 18 from the viewpoint of reducing damage to the wafer 2.

The mounting table 17 is provided with a temperature adjusting means 19 for adjusting the temperature of the wafer 2 to a predetermined temperature. The temperature control means 19 includes a plurality of heat medium pipes 20 arranged as heat medium flow paths, a fluid 21 having a predetermined temperature flowing in the heat medium pipes 20, and a heat insulating pipe provided between the heat medium pipes 20. Member 22
And FIG. 3 shows a schematic diagram of the temperature adjusting means 19. As shown in FIG. 3, the heating medium tube 20 is formed in a substantially annular shape corresponding to the shape of the wafer 2. In the present embodiment, two heat medium tubes 20a and 20b are provided. The heat medium tubes 20a and 20b and the mounting table 17 are connected to the welding member W
The heating medium tube 20 and the mounting table 1
7 is maintained. A heat insulating member 22 is provided between the heat medium tubes 20a and 20b. The heat insulating member 22 is preferably made of a material having a very low thermal conductivity and excellent workability, for example, ethylene tetrafluoride resin (TPFE), polystyrene for foaming, foam polystyrene, or the like. In the present embodiment, the heat insulating member 22 is disposed between the heat medium pipes 20a and 20b by being filled and solidified between the heat medium pipes 20a and 20b in a molten state. , 20b is prevented. The temperature of the fluid 21 is adjusted to a predetermined temperature by the temperature adjusting means 23, and the fluid 21 is supplied from the temperature adjusting means 23 into the heat medium pipe 20 through the supply pipe 25 by the pump 24. The fluid 21 that has passed through the heat medium pipe 20 is configured to return to the temperature control means 23 again from the discharge pipe 26 and circulate. At this time, the fluid 21a flows so that the fluid 21a flowing in the heat medium pipe 20a as one flow path and the fluid 21b flowing in the heat medium pipe 20b as an adjacent flow path flow in different directions, that is, in opposite directions. Is in the heat medium pipe 20a,
The fluid 21b is supplied into the heat medium pipe 20b.

Further, a thermocouple 27 is connected to the mounting table 17 on the lower surface of the wafer 2, and the temperature of the wafer 2 is directly measured by the thermocouple 27. Then, temperature calculation and correction are performed by the temperature control means 28 so that the temperature of the wafer 2 becomes a predetermined temperature, and the result is fed back to the temperature control means 23 so that the temperature of the wafer 2 is maintained at the predetermined temperature. .

A power supply rod 29 made of a hollow conductor is connected to the lower end of the mounting table 17. This feed rod 2
Numeral 9 is connected to a high-frequency power supply 31 via a matching unit 30 composed of a blocking capacitor or the like. High-frequency power is applied from the high-frequency power supply 31 to the mounting table 17 via a power supply rod 29 during processing. As described above, the mounting table 17 functions as a lower electrode, and a glow discharge is generated between the mounting table 17 and an upper electrode provided so as to face the wafer 2 to be described later, and the processing gas introduced into the processing chamber 15 is turned into plasma. For example, an etching process is performed on the wafer 2 by radical particles generated by, for example, plasma.

A shower head 32 into which a processing gas is introduced is disposed above the mounting table 17 so as to face the wafer 2. In the present embodiment, the shower head 32
Is arranged at a distance of about several mm from the mounting surface of the mounting table 17. An elevating mechanism such as a motor (not shown) is provided below the mounting table 17, and the mounting table 17 is moved up and down by this elevating mechanism, so that the shower head 32 and the mounting table 1 are moved.
7 can be adjusted.

The shower head 32 includes an electrode plate 33 located at a lower end thereof, and an electrode support 34 for supporting the electrode plate 33. Then, as described above, glow discharge occurs between the mounting table 17 and the electrode plate 33 due to the high-frequency power applied to the mounting table 17. Thus, the shower head 3
2 serves as an upper electrode.

The shower head 32 is formed in a hollow shape, and a processing gas supply pipe 35 is connected to the hollow portion. A predetermined gas, for example, a process gas (etching gas) containing hydrogen bromide (HBr) and chlorine (Cl ₂ ) is introduced by the processing gas source 36. Then, an etching gas is jetted onto the wafer 2 via the shower head 32.

An exhaust port 37, which is connected to an exhaust device (not shown) such as a vacuum pump or the like, is provided at a lower portion of the processing container 15, so that the pressure inside the processing container 15 can be reduced to a predetermined pressure.

A loading / unloading port 38 for the wafer 2 is provided on the side of the processing container 15, and the loading / unloading port 38 is connected to the vacuum chamber 9 via a gate valve 11 which is automatically opened and closed by a drive mechanism (not shown). ing. The wafers 2 are transferred one by one from the load lock chamber 10 into the processing container 15 by the second transfer arm 13 provided in the vacuum chamber 9.

Next, the operation and effects of the processing system 1 and the processing apparatus 5 configured as described above will be described.

The wafers 2 stored in the cassette 3 in the cassette housing section 4 are carried into the load lock chamber 10 by the first transfer arm 12. The wafer 2 loaded into the load lock chamber 10 is loaded into the processing container 15 by the second transfer arm 13.

Here, the mounting table 17 is lowered to a transfer position by an elevating mechanism (not shown), and the wafer 2 is loaded into the processing chamber 15 from the vacuum chamber 9 through the gate valve 11 and the loading / unloading port 38, and is loaded. Electrostatic chuck 18 of table 17
Is placed on the suction surface.

Then, a high voltage is applied to the electrostatic chuck 18, and the wafer 2 is suction-held by Coulomb force. After that, the mounting table 17 is raised to the processing position by an elevating mechanism (not shown), the etching gas is jetted onto the wafer 2, and the inside of the processing chamber 15 is set and maintained at a predetermined pressure. In this state, predetermined high-frequency power is applied from the high-frequency power supply 31 to the mounting table 17 via the power supply rod 29.
Then, the etching gas ejected onto the wafer 2 is turned into plasma, and the wafer 2 is subjected to an etching process by the radical particles.

As described above, when the etching process is completed, the supply of the etching gas is stopped, the inside of the processing container 15 is purged, the mounting table 17 is lowered to the transfer position, and the processed wafer 2 is removed from the processing container 15. It is carried out. The processed wafer 2 is loaded from the processing chamber 15 into the load lock chamber 10 via the vacuum chamber 9 by the second transfer arm 13.
And carried out to the cassette accommodating section 4 by the first transfer arm 12.

In the etching process, when the etching gas is turned into plasma, the temperature in the processing container 15 rises. Since the etching process largely depends on the temperature of the wafer 2, it is important to uniformly control the temperature of the wafer 2, especially the temperature of the entire surface of the wafer 2.

A heating medium tube 20 corresponding to the shape of the wafer 2 is provided in a mounting table 17 on which the wafer 2 is mounted, and a predetermined temperature is set in the heating medium tube 20 by a temperature control means 23. The supplied fluid 21 is supplied. For this reason, the temperature of the wafer 2 is adjusted by the temperature of the fluid 21 flowing in the heating medium tube 20.

When the temperature of the wafer 2 changes due to the plasma of the etching gas, the wafer 2
Is adjusted by the temperature of the fluid 21 flowing in the heat medium tube 20, but the temperature of the fluid 21 changes while flowing in the heat medium tube 20 due to the temperature difference between the wafer 2 and the fluid 21.

In the present embodiment, the heat medium pipe 20 is composed of two heat medium pipes 20a and 20b.
The fluid 21a and the fluid 21b flowing through the fluids a and 20b flow in opposite directions. Since the heat insulating member 22 is provided between the two heat medium tubes 20a and 20b,
a, 20b, that is, no thermal interference occurs between the fluid 21a and the fluid 21b. Therefore, for example, even if the temperature rises while the fluid 21a flows through the heat medium pipe 20a and the temperature near the discharge pipe 26 rises, the supply pipe 25 for the fluid 21b is arranged near this discharge pipe 26. Accordingly, the temperature of the fluid 21 flowing through the heating medium tube 20 provided below the wafer 2 becomes substantially uniform.

In order to confirm this effect, the temperature of the wafer 2 whose temperature was adjusted using the temperature adjusting means 19 of the present embodiment was measured. FIG. 4 shows a temperature distribution of wafer 2 in the present embodiment. As shown in FIG. 4, the temperature distribution of the wafer 2 whose temperature has been adjusted using the temperature adjusting means 19 greatly changes in both the number and width of the isothermal lines as compared with the temperature distribution of the conventional wafer 2 shown in FIG. It was confirmed that the temperature of the entire surface of the wafer 2 could be controlled substantially uniformly.

A thermocouple 27 is connected to the lower surface of the wafer 2 and the temperature of the wafer 2 is measured. Then, the corrected temperature corrected by the temperature control unit 28 is fed back to the temperature control unit 23 from the temperature, and the temperature control unit 23 changes the temperature of the fluid 21 to the corrected temperature. For this reason, the temperature of the wafer 2 can be reliably controlled to a predetermined temperature.

According to the present embodiment, the heat medium pipe 20 is
The heat medium pipes 20a and 20b are composed of two heat medium pipes 20a and 20b. The fluid 21a and the fluid 21b flowing through the heat medium pipes 20a and 20b flow in opposite directions, and a heat insulating member 22 is arranged between the heat medium pipes 20a and 20b. Since it is provided, the temperature of the entire surface of the wafer 2 can be uniformly controlled during the etching process of the wafer 2.

A thermocouple 27 is connected to the lower surface of the wafer 2, and a temperature corrected by the temperature control unit 28 is obtained from the temperature measured by the thermocouple 27 and is fed back to the temperature control unit 23. Therefore, the temperature of the wafer 2 can be reliably controlled to a predetermined temperature.

(Second Embodiment) Next, a second embodiment will be described with reference to the drawings.

In this embodiment, a detailed description of the same points as in the first embodiment will be omitted.

Therefore, the following description focuses on the differences from the first embodiment.

The present embodiment is different from the first embodiment in that a temperature adjusting means 39 similar to the temperature adjusting means 18 is provided in the electrode support 34 of the shower head 32. FIG. 5 shows a schematic sectional view of the etching apparatus of the present embodiment.

As shown in FIG. 5, a temperature adjusting means 39 for adjusting the temperature of the electrode plate 33 to a predetermined temperature is provided inside the electrode support 34, similarly to the temperature adjusting means 19 in the mounting table 17. Have been. A plurality of, in this embodiment, two heat medium pipes 4 are arranged in a row as heat medium passages.
0, a fluid 41 of a predetermined temperature flowing in the heat medium pipe 40,
A heat insulating member provided between the heat medium tubes. The heat medium tube 40 is formed in a substantially annular shape corresponding to the shape of the electrode plate 33, and is formed in the same shape as the heat medium tube 20 shown in FIG. Also, as in the first embodiment,
The fluid 41 is supplied into the heat medium tube 40 so that the fluids 41 flowing in the heat medium tube 40 flow in opposite directions.
Note that, similarly to the first embodiment, the temperature of the fluid 41 is adjusted to a predetermined temperature by the temperature adjusting means 43, and the temperature adjusting means 43, the supply pipe 45, the heat medium pipe 40, and the discharge pipe 4 are controlled by the pump 44.
6. It is configured to circulate again to the temperature control means 43.

A thermocouple 47 is connected to the shower head 32 on the upper surface of the electrode plate 33, and the temperature of the electrode plate 33 is directly measured. Then, similarly to the first embodiment, temperature calculation and correction are performed by the temperature control unit 48, and the result is fed back to the temperature control unit 43.

In this embodiment, the fluid 41 flowing through the two heat medium tubes 40 flows in opposite directions, and the heat insulating member 42 is provided between the two heat medium tubes 40. 40
There is no thermal interference between the fluids 41 flowing through the fluid. For this reason,
The temperature of the fluid 41 flowing through the heat medium pipe 40 provided above the electrode plate 33 becomes substantially uniform. Therefore, even when the temperature of the electrode plate 33 changes due to the plasma of the etching gas, the fluid plate 41 having a substantially uniform temperature changes the electrode plate 33.
The temperature of the entire surface can be controlled uniformly.

A thermocouple 47 is connected to the upper surface of the electrode plate 33, and the temperature of the electrode plate 33 is measured. Then, the corrected temperature corrected by the temperature control unit 48 from this temperature is fed back to the temperature control unit 43, and the temperature of the fluid 41 is changed by the temperature control unit 43 to the corrected temperature. Therefore, the temperature of the electrode plate 33 can be controlled to a predetermined temperature.

According to the present embodiment, the heat medium pipe 40 is
The fluid flowing through the heat medium tubes flows in the opposite direction, and since the heat insulating member 42 is provided between the heat medium tubes 40, the temperature of the entire surface of the electrode plate 33 is reduced when the wafer 2 is etched. It can be controlled uniformly. Further, a thermocouple 47 is connected to the upper surface of the wafer 2, and a temperature after correction corrected by the temperature control means 48 is obtained from the temperature measured by the thermocouple 47 and is fed back to the temperature control means 43. In addition, the temperature of the electrode plate 33 can be reliably controlled to a predetermined temperature.

(Third Embodiment) Next, a third embodiment will be described with reference to the drawings.

The present embodiment differs from the first embodiment in that the processing vessel 15 is formed in a substantially rectangular shape and a temperature adjusting means 49 similar to the temperature adjusting means 18 is provided on the side wall. Is different. FIG. 6 shows a schematic diagram of the etching apparatus of the present embodiment.

As shown in FIG. 6, the temperature adjusting means 49 for adjusting the temperature of the processing vessel 15 to a predetermined temperature is provided on the side wall of the processing vessel 15 similarly to the temperature adjusting means 19 in the mounting table 17.
Are arranged. The temperature control means 49 includes a plurality of, in this embodiment, two heat medium tubes 50 arranged in a row as heat medium passages, and a fluid 51 having a predetermined temperature flowing through the heat medium tubes 50.
And a heat insulating member 52 disposed between the heat medium tubes 50. Further, similarly to the first embodiment, the fluid 51 is supplied into the heat medium pipe 50 so that the fluids 51 flowing in the heat medium pipe 50 flow in opposite directions. As in the first embodiment, the temperature of the fluid 51 is adjusted to a predetermined temperature by temperature control means (not shown), and the temperature is controlled by a pump, the supply pipe, the heat medium pipe 50, the discharge pipe, and the temperature control means again. It is configured to circulate to A thermocouple (not shown) is provided in the processing container 15 so as to be in contact with the side wall of the processing container 15. As in the first embodiment, temperature calculation and correction are performed by temperature control means. Feedback to the means.

In this embodiment, the fluid 51 flowing through the two heat medium tubes 50 flows in opposite directions, and the heat insulating member 52 is provided between the two heat medium tubes 50. 50
No thermal interference occurs between the fluids 51 flowing through the fluid. For this reason,
The temperature of the fluid 41 flowing through the heat medium pipe 50 provided on the side wall of the processing container 15 becomes substantially uniform. Therefore, even when the temperature of the processing container 15 changes due to the plasma of the etching gas, the temperature of the entire processing container 15 can be controlled uniformly by the fluid 51 having a substantially uniform temperature.

Further, a thermocouple is connected to the side wall of the processing vessel 15, and the temperature corrected by the temperature control means from the temperature measured by the thermocouple is fed back to the temperature control means.
The temperature of the fluid 51 is changed to the corrected temperature by the temperature control means. For this reason, the temperature of the processing container 15 can be reliably controlled to a predetermined temperature.

According to the present embodiment, a pair of heat medium tubes 5
The fluid 51 flowing in the flow path 0 flows in the opposite direction, and the heat insulating member 52 is provided between the heat medium pipes 50. Therefore, when the wafer 2 is etched, the temperature of the entire processing vessel 15 is uniformly controlled. can do.

Further, a thermocouple is provided on the side wall of the processing vessel 15, and a temperature corrected by the temperature control means is obtained from the temperature measured by the thermocouple, and is fed back to the temperature control means. In addition, the temperature of the processing container 15 can be reliably controlled to a predetermined temperature.

The embodiment is not limited to the above, and may be, for example, the following case.

In this embodiment, the temperature control means 19, 3
9 and 49, the configuration is shown in which the heat medium whose temperature has been previously adjusted by the temperature adjusting means 23 and 43 is circulated. For example, a refrigerant flow path and a heater for heating are provided in the mounting table 17 and the mounting table 1 is provided.
The temperature of the wafer 2 may be controlled by heating and cooling the wafer 7. Further, a configuration may be adopted in which the coolant channel and the heat medium channel are provided in the mounting table 17.

The heating medium tubes 20, 40, 50 are not particularly limited as long as they are arranged so that the whole object to be temperature-controlled can be uniformly adjusted. For example, if the object to be processed is L
In the case of a CD substrate, as shown in FIG. 7, the heat medium tube 20 is preferably formed in a substantially rectangular ring shape. In addition, heat medium pipe 2
The number of 0, 40, and 50 may be plural.

The heat insulating members 22, 42, 52 need only be able to prevent heat interference in the heat medium tubes 20, 40, 50. For example, as shown in FIG.
It may be arranged so as to cover the three sides other than the object side of the temperature adjustment of 0,50. In this case, each heat medium pipe 20, 40, 5
The thermal interference at 0 can be further suppressed.

In the second and third embodiments, the heat medium tube 20 inscribed in the mounting table 17 may be a single heat medium tube as in the related art. Also in this case, the effects of the second and third embodiments can be obtained.

The heat measuring means for measuring the temperature of the wafer 2 includes:
The present invention is not limited to the contact-type thermocouples 27 and 47, and may be, for example, a non-contact radiation thermometer. In this case, the temperature can be measured without contacting the measurement object.

The position at which the temperature is measured is not limited to, for example, the lower surface of the wafer 2 but may be the mounting table 17. Also in this case, the temperature of the wafer 2 can be controlled similarly.

In the present embodiment, the case where the etching apparatus 5 is used as the processing apparatus of the present invention has been described as an example. However, the processing apparatus of the present invention may be any apparatus that performs a predetermined process on the object to be processed. In addition to the apparatus, for example, a CVD apparatus, a sputtering apparatus, or an ashing apparatus may be used.

Further, the wafer 2 from the vacuum chamber 9 is first loaded into another processing apparatus, where a predetermined processing is performed, and then the wafer 2 is loaded into another processing apparatus to perform a predetermined processing. As described above, a plurality of processes may be continuously performed. In particular,
For example, a pretreatment for preheating or cooling the wafer 2 may be first performed in the processing apparatus, and then the wafer 2 may be loaded into the processing apparatus 5 of the present invention to perform an etching process. In this case, wafer 2
Can be shortened, and the processing capacity can be improved.

The processing system 1 need not be a so-called multi-chamber having a plurality of processing apparatuses 5. in this case,
The processing device 5 is constituted by one, and the transfer section 6 is constituted by the transfer chamber 8 and the load lock chamber 10. Then, a second transfer arm is provided in the load lock chamber 10. For this reason,
The loading / unloading port of the processing container 15 of the processing apparatus 5 is connected to the load lock chamber 10. Further, the processing device 5 of the processing system 1
Is not limited to three, but may be plural such as two or four.

[0071]

As described above in detail, according to the processing apparatus and the processing system of the present invention, a plurality of flow paths arranged in a line,
A fluid having a predetermined temperature flowing in the flow path and a heat insulating member disposed between the flow paths, so that the fluid flowing in one flow path and the fluid flowing in the adjacent flow path flow in different directions. Is provided with a temperature adjusting means for supplying a fluid into the flow path and adjusting the temperature of the object to be temperature-controlled. The temperature of the processing object or the like can be controlled uniformly.

The temperature control means is provided with temperature control means for measuring the temperature of the object to be temperature-controlled and changing the temperature of the fluid flowing in the flow path based on the measured temperature. When a predetermined process is performed on a target object, the temperature of the target object or the like to be subjected to temperature adjustment can be reliably controlled to a predetermined temperature.

[Brief description of the drawings]

FIG. 1 is a schematic diagram of a processing system according to a first embodiment.

FIG. 2 is a schematic sectional view of the etching apparatus according to the first embodiment.

FIG. 3 is a schematic diagram of a temperature control unit according to the first embodiment.

FIG. 4 is a temperature distribution diagram of a temperature-controlled wafer according to the first embodiment.

FIG. 5 is a schematic sectional view of an etching apparatus according to a second embodiment.

FIG. 6 is a schematic diagram showing a temperature control unit of the etching apparatus according to the third embodiment.

FIG. 7 is a schematic view of a temperature control unit according to another embodiment.

FIG. 8 is a schematic diagram showing the vicinity of a temperature control unit according to another embodiment.

FIG. 9 is a schematic diagram of a conventional temperature control unit.

FIG. 10 is a temperature distribution diagram of a conventional temperature-controlled wafer.

[Explanation of symbols]

1. Processing system 2. Wafer as object to be processed
3 cassette, 4 cassette storage unit, 5 processing unit, 6 transport unit, 14 processing chamber, 17 mounting table,
19, 39, 49 ... temperature control means, 20, 40, 50
... Heat medium pipes as flow paths, 21, 41, 51 fluid, 22, 42, 52 heat insulating member, 32 shower head.

Claims (5)

[Claims] 1. A processing apparatus for arranging a mounting table for mounting an object to be processed at a lower portion in a processing chamber and performing a predetermined process on the object to be processed, wherein the mounting table adjusts a temperature of the object to be processed. Temperature control means is provided internally, the temperature control means comprises a plurality of flow passages arranged in line, a fluid of a predetermined temperature flowing through the flow passages, and a heat insulating member provided between the flow passages. A processing apparatus, comprising: supplying a fluid into a flow path such that a fluid flowing in one flow path and a fluid flowing in an adjacent flow path flow in different directions. 2. A processing apparatus for arranging a mounting table for mounting an object to be processed at a lower portion in a processing chamber and performing predetermined processing on the object to be processed, wherein a temperature of a side wall of the processing chamber is adjusted. Temperature adjusting means is provided, the temperature adjusting means includes a plurality of flow paths arranged in line, a fluid of a predetermined temperature flowing in the flow paths, and a heat insulating member provided between the flow paths. And a fluid supply device that supplies fluid into the flow path such that the fluid flowing in the one flow path and the fluid flowing in the adjacent flow path flow in different directions. 3. A processing apparatus in which a mounting table for mounting an object to be processed is arranged at a lower portion in a processing chamber, and a shower head is arranged so as to face the mounting table to perform a predetermined process on the object to be processed. The showerhead is provided with temperature control means for controlling the temperature thereof, the temperature control means comprising a plurality of flow paths arranged in a line, a fluid of a predetermined temperature flowing through the flow paths, and each of the flow paths. And a heat insulating member disposed between the paths, and supplying the fluid into the flow paths so that the fluid flowing in one flow path and the fluid flowing in the adjacent flow paths flow in different directions. Characteristic processing device. 4. The apparatus according to claim 1, wherein said temperature control means includes a temperature control means for measuring a temperature of an object to be temperature-controlled and changing a temperature of a fluid flowing in said flow path based on the measured temperature. The processing apparatus according to claim 1, wherein: 5. A cassette accommodating section for accommodating a cassette capable of accommodating a plurality of objects to be processed, the processing apparatus according to claim 1, the cassette accommodating section and the processing apparatus. And a transfer unit for transferring the object to be processed.