JP2000173486A - Molecular ion enhanced ion source device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a molecular ion enhanced ion source device capable of producing high current ions. SOLUTION: The ion source device has a pair of mirror electromagnets 11, 12 arranged at regular intervals on the outside of a plasma chamber 10, and a multipole permanent magnet device 20 arranged between a pair of mirror electromagnets, on the outside of the plasma chamber 10. A confinement magnetic field is formed within the chamber with a pair of mirror electromagnets and the multipole permanent magnet device, and gas for producing ions and 2.45 (GHz) microwave are introduced into the magnetic field to produce ion beams in the center axis direction of the chamber.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an ion source device suitable for generating monovalent ions of polyatomic molecules and implanting the ions.

[0002]

2. Description of the Related Art In a conventional ion source for ion implantation (typically a PIG type or the like), electrons having relatively high energy are bombarded in order to strip electrons from molecules. The energy of the electrons is not small compared to the binding energy of the molecules, and because the confinement is effective to some extent, the same molecule will collide multiple times and the gas molecules will be broken down into small molecules or single atoms High probability. In the case of ionization of these molecules, the amount of beam current extracted is large, but the required component of monovalent polyatomic molecular ions is extremely small.

A conventional ion source for generating a cluster ionizes gasified polyatomic molecules (clusters) by irradiating them with electrons having relatively high energy. However, because there is no plasma confinement mechanism, the collision frequency between particles is low,
Many molecules do not collide and are not ionized, or if ionized, do not undergo further collisions. Therefore, the original molecular form is easily retained, and the required molecular ions occupy the majority of the ions. However, the obtained beam current amount is extremely weak (nA order).

[0004]

In the conventional ECR ion source, the electron temperature in the plasma is very high due to efficient electron heating, and the density of the plasma is also very high due to the strong magnetic field. For this reason, it is mainly used for generating multiply-charged ions, and there is no example of mainly generating molecular ions.

Accordingly, an object of the present invention is to provide a molecular ion-enhanced ion source device capable of generating large current ions.

[0006]

According to the present invention, a cylindrical base frame is arranged around the outer periphery of a cylindrical plasma chamber, and the center of the base frame is formed on the outer peripheral surface of the cylindrical base frame. A multipole magnetic field is configured by disposing a multipole permanent magnet device including a plurality of rod-shaped permanent magnets fixedly arranged in a direction parallel to the axis, and the both ends of the multipole permanent magnet device and the base frame. An end frame is provided on each end side in a direction parallel to the central axis, and a pair of mirror magnetic fields is configured by disposing a mirror coil or a mirror magnet composed of a plurality of rod-shaped permanent magnets on the outer peripheral side of the end frame, A magnetic field confined in the plasma chamber inside the base frame is formed by the pair of mirror magnetic fields and the multipole magnetic field, and a gas for generating ions and microwaves are introduced into the plasma chamber in the magnetic field. And said A molecule characterized in that a plasma having a special sectional shape is generated by a confined magnetic field in a direction coinciding with the central axis direction of the plasma chamber, and an ion beam is extracted by an extraction electrode provided at one end of the plasma chamber. An ion enhanced ion source device is provided.

The confined magnetic field in the plasma chamber causes the central axis of the mirror magnet to coincide with the central axis of the multipole permanent magnet device, and the direction of a pair of mirror magnetic fields generated by the mirror magnet is on the central axis. Configured to match.

[0008] A second multipole permanent magnet device is provided between the outer peripheral side of the end frame and the inner peripheral side of the mirror magnet at one end or both ends of the multipole permanent magnet device on the lead electrode side. It may be arranged.

The end frame may be provided integrally with the base frame.

The mirror magnet and the multipole permanent magnet device on the opposite side of the pair of mirror magnetic fields from the extraction electrode each generate a confined magnetic field having a maximum magnetic flux density of 2 kilogauss or more.

With the second multipole permanent magnet device, the confined magnetic field in the plasma chamber can be configured so that the maximum magnetic flux density in the plasma chamber is 2 kilogauss or more.

The microwave is preferably at 2.45 (GHz).

In order to connect to the microwave introduction waveguide, at least one side peripheral portion of the triple structure of the plasma chamber, the base frame and the multipole permanent magnet device is provided.
Providing two connections to connect the waveguides, the connections being located between the bar-shaped permanent magnets of the multipole permanent magnet device,
Microwaves can be introduced from a radial connection portion of the plasma chamber as a long hole shape in a direction parallel to a central axis direction of the plasma chamber and the base frame.

Preferably, the microwave power is at most 100 (W).

The supply of the gas for ion generation is performed by immersing a vacuum vessel loaded with the ion source gas substance in a solid state in a liquid whose temperature is controlled, thereby indirectly heating the ion source gas substance to supply the ion source gas substance. It is configured to

A supply port for heating and gasifying and supplying the ion source gas substance may be provided at one end side on a central axis of the plasma chamber.

As the ion source gas substance, solid decaborane can be used.

[0018]

According to the above configuration, polyatomic molecular ions can be efficiently generated. For ion implantation, if it is desired to implant a very shallow required atom into the Si substrate, for example, low-energy boron (B), 5 (ke)
V) or less and high current molecular ions such as decaborane (B
₁₀ H ₁₄ ) ions and the like can be generated. For example, roughly 5
(KeV) one B ₁₀ H ₁₄ ⁺ ion is 500 (eV)
Of B ⁺ ions. B ₁₀ H ₁₄ ⁺ ion is 5
(KeV) while the B ⁺ ion is 500
(EV), it is easy to pull out, and since the charge per B atom is as low as 1/10, the repulsion is small, so that it is easy to transport it to the wafer.

[0019]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an embodiment of a molecular ion enhanced ion source device according to the present invention will be described with reference to the drawings. FIG. 1 shows the configuration of the entire apparatus. In this embodiment, the supply of the gas for ion generation to the ion source device 1 is performed by immersing the solid-loading vacuum tank 31 loaded with the ion source gas substance in a solid state in a liquid whose temperature is controlled in a thermostatic chamber 32. This is performed by indirectly heating and gasifying the ion source gas substance. In the thermostatic bath 32, the liquid is circulated by a pump 33, and the liquid is heated by a heater 35 provided in an insulating tube 34 for circulation. The gas for ion generation is
A plasma chamber 1 is supplied from a supply port provided at one end on the central axis of the plasma chamber 10 in the ion source device 1.
Introduced in 0. A valve 37-1, a switching valve 38, and a gas flow control valve 36 are provided in a pipe extending from the solid loading vacuum tank 31 to the supply port.

In this embodiment, a polyatomic molecular gas source 30 is further provided, and the gas can be switched from the gas from the solid loading vacuum tank 31 by the switching valve 38 via the valve 37-2.

The polyatomic molecular gas for generating ions is introduced into the plasma chamber 10 from the direction of the mirror electromagnet 11. In particular, in the case of decaborane or the like that has not been gasified at room temperature, it is charged in a solid state into the solid loading vacuum tank 31,
When the solid loading vacuum chamber 31 is immersed in a constant temperature chamber 32 of hot water, decaborane sublimates and the plasma chamber 10
Supplied within. For decaborane, which has a relatively large vapor pressure and for which temperature control at 100 ° C or less is important, it is more indirect to use a liquid such as water with a large heat capacity as a medium than to load it into a vacuum tank with a heater wound straight like in the past. Thermal heating increases temperature stability and simplifies temperature control.

A microwave from a microwave power supply 39 having an RF oscillator is introduced into the plasma chamber 10 from the radial direction.

FIG. 1 shows an example in which the constant temperature bath 32 is disposed in the high voltage section, and the pump 33, the heater 35, and the like are disposed on the ground. Is also good.

FIG. 2 shows a schematic configuration of an ion implantation apparatus to which the present ion source device is applied. Ions from the ion source device are introduced into the mass separator 43 via the acceleration section 41 and the extraction chamber 42, and required ion species are separated. The separated ions are passed through a mass separation slit 44 and a beam control variable width slit 45 to an ion implantation chamber 46.
Irradiation is performed on the wafer 47 inside. In FIG. 2, only one wafer 47 appears to be located at the center of the ion implantation chamber 46, but actually, a plurality of wafers 47 are rotatably arranged in the ion implantation chamber 46. The peripheral portions of the disk 48 are arranged at intervals in the circumferential direction. Acceleration section 4
The components from 1 to the ion implantation chamber 46 are well known,
Since it is not a main part of the present invention, a detailed description is omitted.

Referring to FIGS. 3 and 4, the present ion source device includes a pair of mirror electromagnets 11 and 12 spaced apart from each other to create a mirror magnetic field outside a cylindrical plasma chamber 10. , A multi-pole permanent magnet device 20 provided between the mirror electromagnets 11 and 12 outside the plasma chamber 10. Each of the mirror electromagnets 11 and 12 is realized by a solenoid coil. The intensity of each magnetic field is configured to be set independently as needed. In addition, each of the mirror electromagnets 11 and 12 may be configured by a plurality of rod-shaped permanent magnets having necessary set values.

A connecting portion 21a having a waveguide portion is provided on a side surface of the plasma chamber 10, and a waveguide 13 is connected thereto to introduce a microwave into the plasma chamber 10 from its radial direction. An RF window 22a is inserted into a portion where the waveguide and the plasma chamber are connected. The RF window 22a transmits microwaves from the atmosphere to the plasma chamber 10
While the vacuum of the plasma chamber 10 is maintained. The position of the RF window 22a on the side surface of the plasma chamber 10 is hardly irradiated with plasma due to the magnetic field structure, and compared to the case where the RF window 22a is introduced from the axial direction of the plasma chamber like a conventional ECR ion source for an ion implanter. There is an advantage that it is not easily stained. When the RF window 22a becomes dirty, it becomes conductive, so that the microwave is cut off and the operation cannot be continued.

In such an ion source device, a high magnetic field is formed in the plasma chamber 10 by the mirror electromagnets 11 and 12 and the multi-pole permanent magnet device 20, and an appropriate amount of ion generating gas is applied to the magnetic field. .45 (GHz)
By introducing the microwave, the electrons are heated by ECR heating, plasma is generated, and an ion beam can be generated in the axial direction of the plasma chamber 10.
When a magnetic field of 875 gauss is applied to a microwave of 2.45 (GHz), ECR heating of electrons occurs.

At the end of the mirror electromagnet 12, a casing 40-1 for extracting ions is provided.
-1, an extraction electrode 40-2 and an anode electrode 40-3 are provided.

Another function of the magnetic field described above is to effectively confine the plasma, thereby increasing ionization efficiency and reducing contamination of the RF window 22a. The plasma that tends to spread in the direction of the mirror electromagnet 11 and the multipole permanent magnet device 20 is not extracted as a beam, is lost, and is uneconomical, so it is strongly confined. Specifically, the mirror electromagnet 11 and the multi-pole permanent magnet device 2
The maximum value of the generated magnetic field of 0 in the plasma chamber 10 needs to be at least 875 gauss or more, and preferably 2 kgauss or more. On the other hand, the magnetic field of the mirror electromagnet 12 is weakened, and an escape path for plasma is created in that direction. Ions in the plasma are extracted out of the plasma chamber 10 from the direction of the mirror electromagnet 12. The magnetic field generated by the mirror electromagnet 12 may be about several hundred gauss in the plasma chamber 10.

The microwave power is made small, and the energy of electrons in the plasma is kept low. Some high-energy electrons are present by ECR heating, but if the proportion of high-energy electrons is small, they are diluted and low-energy electrons become dominant on average. Even if a molecule has many electron collisions, the energy of the electrons is kept low, so that it is unlikely that two or more electrons are stripped from the same molecule, and as a result, a single molecular ion is formed. It is unlikely to be broken down into atomic ions. When ionizing decaborane molecules, if the magnetic field is the above value, the volume of the plasma chamber 10 is about 500 cc, and the degree of vacuum in the plasma chamber 10 is 1 × 10 ⁻⁴ Torr or less (high vacuum side), 100
(W). Since the confinement magnetic field is effective, the plasma can be sufficiently maintained.

As shown in detail in FIGS. 5 and 6, the multi-pole permanent magnet device 20 includes four-pole permanent magnets 23a to 23d and a cylindrical yoke 24 provided outside thereof. In particular, in this example, each of the four-pole permanent magnets 23a to 23d is configured by combining two bar-shaped magnets having a trapezoidal cross-sectional shape with the wider bottom face outward.
The pole permanent magnets 23a to 23d are combined with the base frame 26 in a ring shape. The base frame 26 is made of a non-magnetic material, for example, aluminum. The magnetic poles of the four-pole permanent magnets 23a to 23d are arranged so that the magnetic poles facing each other in the central axis direction of the plasma chamber 10 are the same, and the magnetic poles adjacent in the circumferential direction are opposite to each other. .

The multi-pole permanent magnet device 20 combines a plurality of bar-shaped magnets extending in the central axis direction of the plasma chamber 10 from both ends of the base frame 26 in addition to the above-described four-pole permanent magnets 23a to 23d in a ring shape. And two sets of multipole permanent magnets 25-1 to 25-2. As for the multi-pole permanent magnet 25-1, here, 16 rod-shaped magnets are combined into a set of two to form eight magnetic poles 25-1a to 25-1a.
25-1h. Eight magnetic poles 25-1a-2
Of the 5-1h, the magnetic poles 25-1a to 25-1d corresponding to the four-pole permanent magnets 23a to 23d are arranged such that the magnetic poles are oriented in the same manner as the magnetic poles of the four-pole permanent magnets 23a to 23d. You. Also, the magnetic poles 25-1a to 25-1
The magnetic poles 25-1f to 25-1h arranged between the positions d are arranged such that the magnetic poles are circumferential and opposite. Similarly, also in the multi-pole permanent magnet 25-2, eight magnetic poles are configured. Multi-pole permanent magnet 2
Outside the 5-1 to 25-2, cylindrical frames 27-1 and 27-2 made of a non-magnetic material are provided, respectively.

The two sets of multi-pole permanent magnets 25-1 and 25
-2 indicates mirror electromagnets 11 and 12 and plasma chamber 1
0, and if a yoke is present, the magnetic field generated in the plasma chamber 10 by the mirror electromagnets 11 and 12 becomes small.
No yoke 24 to be combined with 3d is provided. In any case, the permanent magnet used in the multipole permanent magnet device 20 has a magnetization direction perpendicular to the magnetic pole surface and all have the same strength of remanence.

The multi-pole permanent magnets 25-1 to 25-2
Is not essential and may be deleted. In this case, both ends (end frames) of the base frame 26 extended to constitute the multipolar permanent magnets 25-1 to 25-2 may be omitted.
Further, the portions corresponding to the both ends may be formed separately from the base frame 26. Furthermore, although the inside of the base frame 26 is cylindrical, the outer surface of the base frame 26 has a four-pole permanent magnet 23a.
23d and the multipole permanent magnets 25-1 and 25-2 are flattened to facilitate adhesion. For this reason,
The outside of the base frame 26 has a polygonal shape.

The side surface of the yoke 24 is provided with four long holes 24a to 24d at intervals in the circumferential direction. This is to enable the connection of the waveguides described in FIG. 4 to be performed at four arbitrary positions. The base frame 26 is provided with the long hole 26a only at the position corresponding to the long hole 24a, but depending on the connection position of the waveguide, the long holes 24b to 2b are provided.
An elongated hole similar to the elongated hole 26a is provided at a location corresponding to 4d. Therefore, not only the portion corresponding to the long hole 24a in the base frame 26 but also the portion corresponding to the long holes 24b to 24d are excluded from the installation area of the four-pole permanent magnets 23a to 23d. The location where the long hole is provided in the base frame 26 corresponds to the corner of the polygonal shape. However, when the long hole is provided, the corner is ground.

Of course, the yoke 24 of the base frame 26
A slot may be provided in advance at a position corresponding to the three slots 24a to 24d. In this case, the plasma chamber 10 is also provided with a long hole at a position corresponding to the long hole of the base frame 26. However, in order to maintain the degree of vacuum in the plasma chamber 10, a long hole to which the waveguide 13 is not connected is provided. Must be closed with something like a lid plate.

Returning to FIG. 3, a gas introduction pipe 29 is connected to the left end of the plasma chamber 10. The right end of the plasma chamber 10 is opened to serve as an ion beam outlet, and a guide tube (not shown) for guiding the ion beam to the irradiation unit is connected to the opening of the plasma chamber 10.

In the ion source device according to the present invention, the fragile decaborane (B ₁₀ H ₁₄ ) molecule is ionized without breaking,
Moreover, a large current beam can be extracted.

The ion source gas is supplied in a gas state.
A substance which is solid at room temperature is packed in a vacuum chamber 31 for solid loading outside the ion source, and the vacuum chamber 31 for solid loading is heated in a constant temperature chamber 32 to heat and gasify the target solid and supply it into the ion source. .

A pair of mirror electromagnets 11 and 12 are provided outside the plasma chamber 10 at a distance to create a mirror magnetic field, and are provided between the mirror electromagnets 11 and 12 outside the plasma chamber 10. And a multi-pole permanent magnet device 20. Since the magnetic field of the mirror electromagnet 11 and the multi-pole permanent magnet device 20 is configured to have a strong magnetic field structure, and the magnetic field of the mirror electromagnet 12 is configured to be a weak magnetic field structure, plasma is guided from the center of the plasma chamber toward the mirror electromagnet 12. Since the magnetic field is strong in the direction, it can be efficiently confined. Specifically, in order to strengthen the confinement, the mirror electromagnet 11 and the multi-pole permanent magnet device 2 are used.
The maximum value of the magnetic field of 0 is desirably about 2 kilogauss or more in the plasma chamber 10 if possible. It is desirable that the mirror electromagnet 12 has several hundred gausses.

The beam is drawn out of the plasma chamber 10 through a slit of the anode in the core of the mirror electromagnet 12. The anode has a thin disk shape and has a through hole in the circular plane. An extraction electrode is provided outside the plasma chamber so as to face the anode, and has a through hole having substantially the same shape as the anode. When a voltage is applied such that the anode is positive with respect to the extraction voltage, ions leaking from the plasma chamber are extracted through the two through holes.

The above explanation is for decaborane,
Obviously, it can be applied to other polyatomic molecules.

According to the above-described ion source device, a magnetic field confined in the plasma chamber 10 is formed by the combination with the pair of mirror electromagnets 11 and 12.

In this confined magnetic field, compared with the conventional microwave ion source device, the plasma chamber 1
Plasma electrons generated in the plasma chamber 10 are prevented from being dissipated in the radial direction of the plasma chamber 10, the confinement time of the electrons is extended, and the heating of the electrons is promoted by the ECR heating action, thereby generating the plasma. Easier to do.
In particular, even when the degree of vacuum in the plasma chamber 10 is high,
The plasma can be sustained. Then, leakage of such ions in the radial direction of the plasma chamber 10 is efficiently suppressed, and adhesion to the inner wall of the plasma chamber 10 and the RF window is suppressed. This means that it is possible to suppress a decrease in microwave transmission efficiency due to conductivity due to the attachment of ions to the RF window 22a.

As described above, when the ion confinement efficiency is improved, the amount of gas introduced into the plasma chamber 10 can be reduced, and the degree of contamination in the plasma chamber 10 can be reduced. Further, even if the introduced gas is a corrosive gas, its ions are generated in the plasma chamber 10.
Can be prevented from adhering to the inner wall and being corroded.
This means that the life of the ion source device is prolonged.

In addition, the multi-pole permanent magnets in the region into which the microwave is introduced are four-pole permanent magnets 23 a to 23 d, so that the interaction between the pair of mirror electromagnets 11 and 12 and the magnetic field causes the plasma chamber 10 to operate. An elongated cross-sectional ion beam that intersects the central axis at right angles can be generated. It is known that the cross-sectional shape of the ion beam changes according to the number of poles of the multi-pole permanent magnet in a region where microwaves are introduced. By the way, in the case of 6 poles,
The cross-sectional shape is substantially triangular, and in the case of eight poles, it is substantially square. The maximum magnetic field strength of the multipole formed in the plasma chamber 10 is preferably a magnetic field of 2 kilogauss or more.

Referring to FIG. 7, a pair of mirror electromagnets 1
The relationship between 1 and 12 and the yoke 24 will be described. Since a multi-pole permanent magnet combined with the mirror electromagnets 11 and 12 cannot generate a magnetic field in the plasma chamber 10 unless it is inside the yoke 24, a four-pole permanent magnet 23
By configuring a to 23d, it is possible to accommodate the space using the thin space between the yoke 24 and the plasma chamber 10. FIG. 7B shows a diagram of an example of a magnetic field using a four-pole permanent magnet.

Next, the principle of the ion confinement effect by the magnetic field of the four-pole permanent magnet will be described with reference to FIG.
In FIG. 8, the lines of magnetic force between the four-pole permanent magnets are symbolically shown one by one. The dashed line indicates the isomagnetic field intensity range of the absolute value of the magnetic field | B |. The closer to the center, the closer to the circle the magnetic field intensity becomes isotropic, but it becomes distorted as it approaches the magnetic pole. Loses its target. The charged particles existing in such a magnetic field tend to move toward the magnetic pole while moving in a spiral around the magnetic field lines. In other words, the charged particle tries to move to the direction where the center of rotation becomes stronger in the magnetic field. Such charged particles are also subjected to a repulsive action such that they move in the opposite direction as the magnetic field strength increases as they approach the pole. The degree of this rebound is determined by the initial direction of motion, and the intensity ratio of the magnetic field (FIG. 7)
To quote (b), the larger the ratio between the minimum value and the peak value between the valleys of the curve, the greater the tendency to rebound. According to such a principle, an ion confinement effect in which the residence time of the ions is prolonged occurs. On the other hand, the RF window 22a is located at a position parallel to the magnetic field lines, and the ions are unlikely to move in a direction perpendicular to the magnetic field lines. This also contributes to the difficulty of ion attachment to the RF windows 22a.

By the way, the frequency of the microwave is set to 2.45.
(GHz) because the generator of this frequency is used in household electric appliances, for example, a microwave oven, and is provided at the lowest cost. If it is not necessary to consider this point, Alternatively, another frequency may be used.

Although the present invention has been described with reference to the case of a four-pole permanent magnet, it goes without saying that the number of magnetic poles is not limited to four.

[0051]

According to the present invention, the following effects can be obtained.

Since a plasma having a small electron energy is generated in an efficient confined magnetic field, a relatively large current of decaborane ions can be selectively generated.

Since the microwave is introduced from the radial direction of the plasma chamber, the speed of fouling the RF window is reduced, and the maintenance cycle of the ion source is lengthened.

The vacuum chamber in which decaborane is loaded is heated via the liquid in the thermostat, and more stable temperature control is possible than when the heater is heated directly by the heater.

[Brief description of the drawings]

FIG. 1 is a diagram showing an embodiment of a molecular ion enhanced ion source device according to the present invention.

FIG. 2 is a diagram showing a configuration of an ion implantation apparatus to which the present invention is applied.

FIG. 3 is a longitudinal sectional view showing an ion source device of the molecular ion enhanced ion source device according to the present invention.

FIG. 4 is a sectional view taken along line AA ′ of FIG. 3;

5A and 5B are views showing the multi-pole permanent magnet device shown in FIG. 3, wherein FIG. 5A is a partial cross-sectional side view, and FIG. 5B is a cross-sectional view taken along line BB ′ in FIG. , FIG. (C) is the line C- in FIG.
It is sectional drawing by C '.

6 is a side view and a sectional view of the yoke, the base frame, and the frame shown in FIG. 5;

7A and 7B are views for explaining the mirror electromagnet and the yoke shown in FIG. 3; FIG. 7A is a longitudinal sectional view, and FIG. 7B shows an example of a magnetic field when a four-pole permanent magnet is used; FIG.

FIG. 8 is a diagram for explaining the operation of the four-pole permanent magnet shown in FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Ion source apparatus 10 Plasma chamber 11, 12 Mirror electromagnet 13 Waveguide 20 Multipole permanent magnet apparatus 21a Connection part 22a RF window 23a-23d Quadrupole permanent magnet 24 Yoke 25-1, 25-2 Multipole permanent magnet 26 Base Frame 27-1, 27-2 Frame 29 Gas introduction pipe 41 Acceleration section 42 Extraction chamber 43 Mass separator 44 Mass separation slit 45 Beam control variable width slit 46 Ion implantation chamber 47 Wafer 48 Rotating disk

Claims (12)

[Claims] 1. A cylindrical base frame is disposed around an outer peripheral portion of a cylindrical plasma chamber, and is fixedly mounted on an outer peripheral surface of the cylindrical base frame in a direction parallel to a central axis of the base frame. A multipole magnetic field is configured by disposing a multipole permanent magnet device with a plurality of rod-shaped permanent magnets, and at both ends of the multipole permanent magnet device and at both ends in a direction parallel to the central axis of the base frame. Each of the end frames is provided, and a mirror coil or a plurality of bar-shaped permanent magnets is arranged on the outer peripheral side of the end frame to form a pair of mirror magnetic fields. With this, a magnetic field confined in the plasma chamber inside the base frame is formed, and a gas for generating ions and microwaves are introduced into the plasma chamber in the magnetic field. To generate plasma of a special cross-sectional shape by matching the direction of the magnetic confinement,
A molecular ion enhanced ion source device, wherein an ion beam is extracted by an extraction electrode provided at one end of the plasma chamber. 2. The magnetic field confined in the plasma chamber according to claim 1, wherein a central axis of the mirror magnet coincides with a central axis of the multi-pole permanent magnet device, and a pair of mirror magnetic fields generated by the mirror magnet. Characterized in that the directions are the same on the central axis. 3. The multi-pole permanent magnet device according to claim 1, wherein a second end is provided between an outer peripheral side of the end frame and an inner peripheral side of the mirror magnet at one end or both ends on the side of the lead electrode of the multipole permanent magnet device. A multi-pole permanent magnet device according to any one of claims 1 to 3, wherein the ion source is a molecular ion enhanced ion source device. 4. The molecular ion enhanced ion source device according to claim 1, wherein the end frame is provided integrally with the base frame. 5. The multi-pole permanent magnet device according to claim 1, wherein the mirror magnet and the multi-pole permanent magnet device of the pair of mirror magnetic fields opposite to the extraction electrode each generate a confined magnetic field having a maximum magnetic flux density of 2 kilogauss or more. A molecular ion enhanced ion source device characterized by the above-mentioned. 6. The method according to claim 3, wherein the confined magnetic field in the plasma chamber is configured to have a maximum magnetic flux density of 2 kilogauss or more by the second multipole permanent magnet device. Molecular ion enhanced ion source device. 7. The method according to claim 1, wherein the frequency is 2.45 GHz.
A molecular ion-enhanced ion source device characterized in that microwaves are introduced. 8. The plasma chamber according to claim 1, wherein the plasma chamber is connected to the microwave introduction waveguide.
A waveguide is connected by providing at least one connection portion on a side peripheral portion of the triple structure of the base frame and the multipole permanent magnet device, and the connection portion is provided between the bar-shaped permanent magnets of the multipole permanent magnet device. A molecular ion, wherein a microwave is introduced from a radial connection portion of the plasma chamber as a long hole in a direction parallel to a central axis direction of the plasma chamber and the base frame. Enhanced ion source device. 9. The molecular ion enhanced ion source device according to claim 1, wherein the microwave power is a maximum of 100 (W). 10. The ion source gas supply according to claim 1, wherein the supply of the ion generation gas is performed by immersing a vacuum vessel loaded with the ion source gas substance in a solid state in a temperature-controlled liquid. A molecular ion enhanced ion source device which is heated, gasified, and supplied. 11. The molecular ion enhanced ion source according to claim 10, wherein a supply port for heating, gasifying and supplying the ion source gas substance is provided at one end side on a center axis of the plasma chamber. apparatus. 12. The molecular ion enhanced ion source device according to claim 10, wherein solid decaborane is used as the ion source gas substance.