JP2000156400A - Separating method and separating equipment of substrate - Google Patents

Separating method and separating equipment of substrate

Info

Publication number
JP2000156400A
JP2000156400A JP10328696A JP32869698A JP2000156400A JP 2000156400 A JP2000156400 A JP 2000156400A JP 10328696 A JP10328696 A JP 10328696A JP 32869698 A JP32869698 A JP 32869698A JP 2000156400 A JP2000156400 A JP 2000156400A
Authority
JP
Japan
Prior art keywords
substrate
electrode
wafer
push
pin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10328696A
Other languages
Japanese (ja)
Inventor
Kenji Sumita
賢二 住田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP10328696A priority Critical patent/JP2000156400A/en
Publication of JP2000156400A publication Critical patent/JP2000156400A/en
Pending legal-status Critical Current

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Jigs For Machine Tools (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a separating method and separating equipment of a substrate which can separate a substrate excellently from an electrostatic attracting electrode, while it can be prevented that the substrate jumps or cracks when the substrate of a wafer or the like is pushed up. SOLUTION: Pushing-up pins 5 are protruded a little from the surface of an electrostatic attracting electrode 1 to an electrostatically attracted wafer 4. A load applied to the pins 5 is measured with a load meter 11. The output of a power source is so controlled that the load value is set in a specified range of weight corresponding to the case that the wafer 4 is not electrostatically charged. After the load value has reached the specified range of weight, the wafer 4 is further pushed up by the pins 5 and separated from the electrode 1. As a result, the wafer 4 can be excellently separated from the electrode 1 while it is prevented that the wafer 4 jumps or cracks.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、静電吸着電極から
ウェハなどの基板を分離させる基板の分離方法および分
離装置に関するものである。
The present invention relates to a method and an apparatus for separating a substrate such as a wafer from an electrostatic chucking electrode.

【0002】[0002]

【従来の技術】現在、半導体素子のパターンの線幅は
0.25μm以下にまで微細化が進んでいる。所望のパ
ターン形状を得るには、プロセス処理中のウェハの温度
制御が重要である。ウェハの温度制御の方法の一つとし
て、静電吸着したウェハの裏面にHeガスを流してウェ
ハを冷却する手法があり、この手法が主流になってきて
いる。
2. Description of the Related Art At present, the line width of a pattern of a semiconductor device is reduced to 0.25 μm or less. In order to obtain a desired pattern shape, it is important to control the temperature of the wafer during the processing. As one of the methods of controlling the temperature of the wafer, there is a method of flowing He gas to the back surface of the wafer that has been electrostatically attracted to cool the wafer, and this method is becoming mainstream.

【0003】静電吸着の原理は、図3に示すように、静
電吸着電極(ESC電極と称す)1の表面に櫛形や渦巻
き型の対向する2つの導電電極1a,1bを形成し、直
流電源2、3(図2参照)からこの導電電極1a,1b
にそれぞれ正と負の直流高電圧を印加することで、ウェ
ハ4に誘電分極(図4参照)を起こして、この電荷によ
るクーロン力でウェハ4とESC電極1とを吸着させる
ものである。そして、ESC電極1に吸着したウェハ4
の裏面にHeガスを流すことでウェハ4の温度を制御し
ている。
As shown in FIG. 3, the principle of electrostatic attraction is to form two opposing conductive electrodes 1a and 1b of a comb shape or a spiral type on the surface of an electrostatic attraction electrode (referred to as an ESC electrode) 1 so that a direct current is applied. From the power sources 2 and 3 (see FIG. 2), the conductive electrodes 1a and 1b
By applying positive and negative DC high voltages to the wafer 4, respectively, dielectric polarization (see FIG. 4) occurs in the wafer 4, and the wafer 4 and the ESC electrode 1 are attracted by the Coulomb force due to the electric charge. Then, the wafer 4 attracted to the ESC electrode 1
The temperature of the wafer 4 is controlled by flowing He gas to the back surface of the wafer.

【0004】図2に示すように、ESC電極1に置かれ
たウェハ4は、プロセス処理中は静電吸着によりESC
電極1に吸着している。ESC電極1には出退自在の突
き上げピン5が内装されており、この突き上げピン5は
駆動モータ6などが設けられた突き上げ機構7により出
退されるようになっている。プロセス終了後、直流電源
2,3から印加されている正と負の直流高電圧をOFF
してから、突き上げピン5を上昇させてウェハ4をES
C電極1から持ち上げて分離させる。なお、図2におけ
る8は、直流電源2、3や駆動モータ6などを制御する
マイクロコンピュータからなる制御装置、9はこの制御
装置8に接続された記憶装置である。
[0004] As shown in FIG. 2, a wafer 4 placed on an ESC electrode 1 is subjected to ESC by electrostatic attraction during processing.
It is adsorbed on the electrode 1. The ESC electrode 1 is provided with a push-up pin 5 that can move back and forth, and the push-up pin 5 is moved up and down by a push-up mechanism 7 provided with a drive motor 6 and the like. After the process is completed, turn off the positive and negative DC high voltages applied from DC power supplies 2 and 3.
Then, the push-up pins 5 are lifted and the wafer 4 is
Lift and separate from C electrode 1. In FIG. 2, reference numeral 8 denotes a control device including a microcomputer for controlling the DC power supplies 2, 3 and the drive motor 6, and the like, and reference numeral 9 denotes a storage device connected to the control device 8.

【0005】[0005]

【発明が解決しようとする課題】ESC電極1に印加さ
れている正と負の直流高電圧をOFFすれば、ウェハ4
の誘電分極はなくなり、クーロン力が喪失してウェハ4
とESC電極1は簡単に外れるはずである。しかしなが
ら、現実にはウェハ4に誘電分極の残留電荷が発生し、
この電荷によるクローン力が残るため、突き上げピン5
でウェハ4を持ち上げたときに、ウェハ4が跳ねたり、
最悪の場合、割れたりする問題が起きている。
When the positive and negative DC high voltages applied to the ESC electrode 1 are turned off, the wafer 4
Is lost, the Coulomb force is lost and the wafer 4
And the ESC electrode 1 should come off easily. However, in reality, residual charges of dielectric polarization are generated on the wafer 4,
Since the cloning force due to this charge remains, the push-up pin 5
When the wafer 4 is lifted by the
In the worst case, cracking problems have occurred.

【0006】この解決策として、ウェハ4を持ち上げる
前に印加電圧の極性を逆にしてからOFFする、あるい
は、交流のように極性を反転しながら振幅を小さくして
からOFFする方法が用いられているが、どのくらいの
時間、どの程度の電圧を印加すれば良いのかが明確でな
く色々と条件を変えて試すしか方法がなかった。
As a solution to this, a method is used in which the polarity of the applied voltage is reversed before lifting the wafer 4 and then turned off, or the amplitude is reduced while reversing the polarity like an alternating current and then turned off. However, it was not clear how long and how much voltage should be applied, and there was no other way but to change various conditions and try.

【0007】本発明は上記従来の課題を解決しようとす
るもので、ウェハなどの基板の突き上げ時に基板が跳ね
たりや割れたりすることを防止できながら、基板を静電
吸着電極より良好に分離させることができる基板の分離
方法および分離装置を提供することを目的とするもので
ある。
An object of the present invention is to solve the above-mentioned conventional problems, and it is possible to prevent a substrate such as a wafer from jumping or breaking when the substrate is pushed up, and to separate the substrate better from the electrostatic chucking electrode. It is an object of the present invention to provide a method and apparatus for separating a substrate which can be performed.

【0008】[0008]

【課題を解決するための手段】上記目的を達成するため
に、本発明は、静電吸着電極に静電吸着された基板を静
電吸着電極から分離させる基板の分離方法であって、静
電吸着電極から基板を突き上げる突き上げピンを静電吸
着電極の表面から僅かに突出させた状態で、突き上げピ
ンに作用する荷重を測定し、この荷重値が、基板が静電
気を帯びていない場合に相当する所定の重量範囲になる
ように、静電吸着電極に対する電源の出力を制御し、前
記重量範囲に達してから突き上げピンにより基板をさら
に突き上げて静電吸着電極から分離させるものである。
In order to achieve the above object, the present invention provides a method of separating a substrate from an electrostatic chucking electrode, the method comprising: The load acting on the push-up pin is measured with the push-up pin that pushes up the substrate from the suction electrode slightly protruding from the surface of the electrostatic suction electrode, and this load value corresponds to the case where the substrate is not charged with static electricity. The output of the power supply to the electrostatic attraction electrode is controlled so as to be within a predetermined weight range, and after reaching the weight range, the substrate is further pushed up by a push-up pin to be separated from the electrostatic attraction electrode.

【0009】これによれば、基板突き上げ時に基板が跳
ねたりや割れたりすることを防止できながら、基板を静
電吸着電極より良好に分離させることができる。
According to this, the substrate can be better separated from the electrostatic attraction electrode while preventing the substrate from jumping or breaking at the time of pushing up the substrate.

【0010】[0010]

【発明の実施の形態】請求項1記載の本発明は、静電吸
着電極に静電吸着されたウェハなどの基板を静電吸着電
極から分離させる基板の分離方法であって、静電吸着電
極から基板を突き上げる突き上げピンを静電吸着電極の
表面から僅かに突出させた状態で、突き上げピンに作用
する荷重を測定し、この荷重値が、基板が静電気を帯び
ていない場合に相当する所定の重量範囲になるように、
静電吸着電極に対する電源の出力を制御し、前記重量範
囲に達してから突き上げピンにより基板をさらに突き上
げて静電吸着電極から分離させるものである。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention according to claim 1 is a method of separating a substrate such as a wafer, which is electrostatically attracted to an electrostatic attraction electrode, from the electrostatic attraction electrode. With the push-up pins that push up the substrate from the surface of the electrostatic chuck electrode slightly protruding from the surface of the electrostatic attraction electrode, the load acting on the push-up pins is measured. To be in the weight range,
The output of the power supply to the electrostatic attraction electrode is controlled, and after reaching the weight range, the substrate is further pushed up by the push-up pin to be separated from the electrostatic attraction electrode.

【0011】請求項4記載の本発明は、静電吸着電極に
静電吸着されたウェハなどの基板を静電吸着電極から分
離させる基板の分離装置であって、静電吸着電極から基
板を突き上げる突き上げピンを有する突き上げ機構と、
突き上げピンに作用する荷重を測定する荷重計と、静電
吸着電極に静電吸着された基板に対して突き上げピンを
静電吸着電極の表面から僅かに突出させて、突き上げピ
ンに作用する荷重を荷重計にて測定させ、この荷重値
が、基板が静電気を帯びていない場合に相当する重量範
囲になるように、静電吸着電極に対する電源の出力を制
御し、前記重量範囲に達してから突き上げピンにより基
板をさらに突き上げて静電吸着電極から分離させる制御
手段とを備えたものである。
According to a fourth aspect of the present invention, there is provided a substrate separating apparatus for separating a substrate such as a wafer electrostatically attracted to an electrostatic attraction electrode from the electrostatic attraction electrode, wherein the substrate is pushed up from the electrostatic attraction electrode. A push-up mechanism having a push-up pin;
A load meter that measures the load acting on the push-up pin, and the load acting on the push-up pin is made by slightly projecting the push-up pin from the surface of the electrostatic attraction electrode against the substrate electrostatically attracted to the electrostatic attraction electrode. Control the output of the power supply to the electrostatic attraction electrode so that the load value falls within the weight range corresponding to the case where the substrate is not charged with static electricity, and push up after reaching the weight range. Control means for further pushing up the substrate by means of pins and separating the substrate from the electrostatic chucking electrode.

【0012】この方法および構成によれば、突き上げピ
ンにより基板をさらに突き上げる際には、基板が静電気
を帯びていない状態となるため、基板が静電吸着電極に
対して静電吸着されず、基板が跳ねたりや割れたりする
ことを防止できながら、基板を突き上げて静電吸着電極
より良好に分離させることができる。
According to this method and configuration, when the substrate is further pushed up by the push-up pins, the substrate is not charged with static electricity. The substrate can be lifted up and separated better than the electrostatic attraction electrode while preventing the substrate from jumping or cracking.

【0013】また、請求項2記載の本発明は、請求項1
記載のウェハの分離方法において、基板が静電気を帯び
ていない場合の荷重値を実験的に測定し、この荷重値の
測定データに基づいて、基板が静電気を帯びていない場
合に相当する重量範囲を予め設定するものであり、この
方法によれば、的確な重量範囲を設定できる。
[0013] The present invention described in claim 2 provides the present invention in claim 1.
In the wafer separation method described above, a load value when the substrate is not charged with static electricity is measured experimentally, and a weight range corresponding to the case where the substrate is not charged with static electricity is measured based on the measured data of the load value. This is set in advance, and according to this method, an accurate weight range can be set.

【0014】以下、本発明の実施の形態にかかる基板の
分離装置を、図1を用いて説明する。なお、従来のもの
とほぼ同様な機能のものには同符号を付す。図1に示す
ように、基板の分離装置には、載置された基板としての
ウェハ4を静電吸着する静電吸着電極(ESC電極と称
す)1と、このESC電極1の導電電極にそれぞれ正と
負の直流高電圧を印加する直流電源2、3と、ESC電
極1において出退自在に内装されているの突き上げピン
5を出退させる突き上げ機構7と、突き上げ機構7の出
退支持ロッド7aに介装されて突き上げピン5に作用す
る荷重を測定する荷重計11と、荷重計11からの信号
を入力するとともに直流電源2、3や突き上げ機構7の
駆動モータ6などを制御するマイクロコンピュータから
なる制御装置12と、この制御装置12に接続された記
憶装置13とが備えられている。
Hereinafter, an apparatus for separating a substrate according to an embodiment of the present invention will be described with reference to FIG. Note that the same reference numerals are given to those having substantially the same functions as the conventional ones. As shown in FIG. 1, the substrate separating device includes an electrostatic chucking electrode (referred to as an ESC electrode) 1 for electrostatically holding a wafer 4 as a mounted substrate, and a conductive electrode of the ESC electrode 1. DC power supplies 2 and 3 for applying a positive and negative DC high voltage; a push-up mechanism 7 for moving up and down a push-up pin 5 which is provided in the ESC electrode 1 so as to be able to move back and forth; A load cell 11 interposed in 7a for measuring a load acting on the push-up pin 5 and a microcomputer for inputting a signal from the load cell 11 and controlling the DC power supplies 2, 3 and the drive motor 6 of the push-up mechanism 7 And a storage device 13 connected to the control device 12.

【0015】この構成において、ウェハ4に対するプロ
セス処理が終了し、ウェハ4をESC電極1より分離さ
せる際には以下のような制御処理動作が行われる。ま
ず、制御装置12によって、突き上げピン5をESC電
極1の表面から僅かに突出させるために、突き上げ機構
7の駆動モータ6にピン上昇の指令が出される。それか
ら、突き上げ機構7に取り付けられた荷重計11の荷重
値を制御装置12に取り込む。この状態ではウェハ4は
ESC電極1に吸着しているため、突き上げピン5には
大きな荷重がかかっている。
In this configuration, when the processing of the wafer 4 is completed and the wafer 4 is separated from the ESC electrode 1, the following control processing operation is performed. First, the control device 12 issues a pin-up command to the drive motor 6 of the push-up mechanism 7 in order to slightly push the push-up pin 5 from the surface of the ESC electrode 1. Then, the load value of the load meter 11 attached to the push-up mechanism 7 is taken into the control device 12. In this state, since the wafer 4 is attracted to the ESC electrode 1, a large load is applied to the push-up pins 5.

【0016】ESC電極1に印加する正と負の直流高電
圧を減らしていくと、ウェハ4とESC電極1との吸着
力が小さくなり、荷重計11の値も小さくなっていく。
さらに、荷重計11の値が、ウェハ4が静電気を帯びて
いない場合に相当する所定の重量範囲になるように、正
と負の直流高電圧をそれぞれ逆極性になるまで減らして
いく。そして、荷重計11の値が所定の重量範囲になっ
た時点で正と負の直流高電圧を0Vに戻してから直流電
源2,3をOFFする。
As the positive and negative DC high voltages applied to the ESC electrode 1 are reduced, the attraction between the wafer 4 and the ESC electrode 1 decreases, and the value of the load cell 11 also decreases.
Further, the positive and negative DC high voltages are reduced until they have opposite polarities, respectively, so that the value of the load cell 11 falls within a predetermined weight range corresponding to the case where the wafer 4 is not charged with static electricity. Then, when the value of the load cell 11 falls within the predetermined weight range, the positive and negative DC high voltages are returned to 0 V, and then the DC power supplies 2 and 3 are turned off.

【0017】この後、制御装置12により、突き上げ機
構7の駆動モータ6に対してピン上昇の指令をさらに出
して、ウェハ4をESC電極1から所定の位置まで持ち
上げる。
Thereafter, the controller 12 further issues a command to raise the pins to the drive motor 6 of the push-up mechanism 7 to lift the wafer 4 from the ESC electrode 1 to a predetermined position.

【0018】この方法および構成によれば、突き上げピ
ン5によりウェハ4をさらに突き上げる際には、ウェハ
4は残留電荷がなくて静電気を帯びていない状態となる
ため、ウェハ4は静電吸着電極1に対して静電吸着され
ず、ウェハ4が跳ねたりや割れたりすることを防止でき
ながら、ウェハ4を突き上げて静電吸着電極1より良好
に分離させることができる。
According to this method and configuration, when the wafer 4 is further pushed up by the push-up pins 5, the wafer 4 has no residual charge and is not charged with static electricity. The wafer 4 can be lifted up and separated better than the electrostatic attraction electrode 1 while preventing the wafer 4 from jumping or cracking without being electrostatically attracted.

【0019】なお、上記重量範囲は、予め、同種類のウ
ェハ4をESC電極1に静電気を負わせることなく単に
載せ、この状態での荷重値を荷重計11で測定し、この
ようにして複数の実験測定データを得て、これらの実験
測定データを平均化してその平均値、または平均値に近
い数値範囲を採用することにより設定する。この場合に
は、その設定重量値をオフセットした状態として、荷重
値がゼロまたは絶対値がゼロに近い値になった際に上記
制御処理を行ってもよい。
The above-mentioned weight range can be determined by simply placing a wafer 4 of the same type in advance on the ESC electrode 1 without applying static electricity, measuring the load value in this state with the load meter 11, and Are obtained by averaging these experimental measurement data, and averaging these experimental measurement data and adopting the average value or a numerical range close to the average value. In this case, with the set weight value being offset, the control process may be performed when the load value becomes zero or the absolute value becomes close to zero.

【0020】これに代えて、ウェハ4をESC電極1に
静電吸着させる直前に、その荷重値を荷重計11で実際
に測定し、その後、静電吸着させた後に、前記荷重値と
なるように正と負の直流高電圧をそれぞれ逆極性になる
まで減らしていくように制御してもよく、この場合に
は、そのウェハ4の重量に適した制御を個別に行うこと
が可能である。しかしながら、この場合には、ウェハ4
をESC電極1に静電吸着させる前に荷重を測定する工
程が必要となるため、上述のように予め設定した重量範
囲を採用する方が処理能力は向上する。
Instead, immediately before the wafer 4 is electrostatically attracted to the ESC electrode 1, its load value is actually measured by the load meter 11, and after the electrostatic attraction, the load value is adjusted to the above-mentioned value. Alternatively, control may be performed so as to reduce the positive and negative DC high voltages until they have opposite polarities. In this case, it is possible to individually perform control suitable for the weight of the wafer 4. However, in this case, the wafer 4
It is necessary to perform a step of measuring a load before electrostatically adsorbing the ESC electrode 1 on the ESC electrode 1, and thus the processing capacity is improved by adopting the weight range set in advance as described above.

【0021】なお、上記実施の形態においては分離させ
る基板がウェハ4である場合を述べたが、これに限るも
のではなく、ガラス基板などの他の基板に対しても適用
することができる。
In the above embodiment, the case where the substrate to be separated is the wafer 4 has been described. However, the present invention is not limited to this and can be applied to other substrates such as a glass substrate.

【0022】[0022]

【発明の効果】以上のように、本発明の基板の分離方法
および分離装置によれば、突き上げピンを静電吸着電極
の表面から僅かに突出させて、突き上げピンに作用する
荷重を測定し、この荷重値が、基板が静電気を帯びてい
ない場合に相当する所定の重量範囲になるように、静電
吸着電極に対する電源の出力を制御し、重量範囲に達し
てから突き上げピンにより基板をさらに突き上げて静電
吸着電極から分離させることにより、基板が跳ねたりや
割れたりすることを防止しながら、基板を静電吸着電極
より良好に分離させることができる。
As described above, according to the method and apparatus for separating a substrate of the present invention, the push-up pin is slightly projected from the surface of the electrostatic attraction electrode, and the load acting on the push-up pin is measured. The output of the power supply to the electrostatic attraction electrode is controlled so that the load value falls within a predetermined weight range corresponding to a case where the substrate is not charged with static electricity, and after reaching the weight range, the substrate is further pushed up by the push-up pin. By separating the substrate from the electrostatic attraction electrode, the substrate can be better separated from the electrostatic attraction electrode while preventing the substrate from jumping or breaking.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施の形態にかかる基板の分離装置の
構成を示す図
FIG. 1 is a diagram showing a configuration of a substrate separation apparatus according to an embodiment of the present invention.

【図2】従来の基板の分離装置の構成を示す図FIG. 2 is a diagram showing a configuration of a conventional substrate separation apparatus.

【図3】静電吸着電極の表面電極の構成を示す図FIG. 3 is a diagram showing a configuration of a surface electrode of the electrostatic chucking electrode.

【図4】静電吸着電極とウェハの誘電分極を示す図FIG. 4 is a view showing the electrostatic chucking electrode and the dielectric polarization of the wafer.

【符号の説明】[Explanation of symbols]

1 静電吸着電極 2、3 直流電源 4 ウェハ(基板) 5 突き上げピン 11 荷重計 12 制御装置 13 記憶装置 DESCRIPTION OF SYMBOLS 1 Electrostatic adsorption electrode 2, 3 DC power supply 4 Wafer (substrate) 5 Push-up pin 11 Load cell 12 Control device 13 Storage device

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 静電吸着電極に静電吸着された基板を静
電吸着電極から分離させる基板の分離方法であって、静
電吸着電極から基板を突き上げる突き上げピンを静電吸
着電極の表面から僅かに突出させた状態で、突き上げピ
ンに作用する荷重を測定し、この荷重値が、基板が静電
気を帯びていない場合に相当する所定の重量範囲になる
ように、静電吸着電極に対する電源の出力を制御し、前
記重量範囲に達してから突き上げピンにより基板をさら
に突き上げて静電吸着電極から分離させる基板の分離方
法。
1. A method for separating a substrate from an electrostatic attraction electrode, the substrate being electrostatically attracted to the electrostatic attraction electrode, comprising: a push-up pin for pushing up the substrate from the electrostatic attraction electrode; Measure the load acting on the push-up pin while slightly projecting it, and set the load value of the power supply to the electrostatic attraction electrode so that this load value falls within a predetermined weight range corresponding to the case where the substrate is not charged with static electricity. A method of controlling a substrate, wherein the output is controlled, and after reaching the weight range, the substrate is further pushed up by a push-up pin and separated from the electrostatic chucking electrode.
【請求項2】 基板が静電気を帯びていない場合の荷重
値を実験的に測定し、この荷重値の測定データに基づい
て、基板が静電気を帯びていない場合に相当する重量範
囲を予め設定する請求項1に記載の基板の分離方法。
2. A load value when the substrate is not charged with static electricity is measured experimentally, and a weight range corresponding to the case where the substrate is not charged with static electricity is set in advance based on the measured data of the load value. The method for separating a substrate according to claim 1.
【請求項3】 基板はウェハである請求項1または2に
記載の基板の分離方法。
3. The method for separating a substrate according to claim 1, wherein the substrate is a wafer.
【請求項4】 静電吸着電極に静電吸着された基板を静
電吸着電極から分離させる基板の分離装置であって、静
電吸着電極から基板を突き上げる突き上げピンを有する
突き上げ機構と、突き上げピンに作用する荷重を測定す
る荷重計と、静電吸着電極に静電吸着された基板に対し
て突き上げピンを静電吸着電極の表面から僅かに突出さ
せて、突き上げピンに作用する荷重を荷重計にて測定さ
せ、この荷重値が、基板が静電気を帯びていない場合に
相当する重量範囲になるように、静電吸着電極に対する
電源の出力を制御し、前記重量範囲に達してから突き上
げピンにより基板をさらに突き上げて静電吸着電極から
分離させる制御手段とを備えた基板の分離装置。
4. An apparatus for separating a substrate, which separates a substrate electrostatically attracted to an electrostatic chucking electrode from the electrostatic chucking electrode, comprising: a push-up mechanism having a push-up pin for pushing up the substrate from the electrostatic chucking electrode; A load cell that measures the load acting on the substrate and a push-up pin slightly protruding from the surface of the electrostatic attraction electrode to the substrate that is electrostatically attracted to the electrostatic attraction electrode, and the load acting on the push-up pin is measured by the load meter. And control the output of the power supply to the electrostatic attraction electrode so that the load value falls within the weight range corresponding to the case where the substrate is not charged with static electricity. Control means for further pushing up the substrate to separate it from the electrostatic chucking electrode.
【請求項5】 基板はウェハである請求項4に記載の基
板の分離装置。
5. The apparatus according to claim 4, wherein the substrate is a wafer.
JP10328696A 1998-11-19 1998-11-19 Separating method and separating equipment of substrate Pending JP2000156400A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10328696A JP2000156400A (en) 1998-11-19 1998-11-19 Separating method and separating equipment of substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10328696A JP2000156400A (en) 1998-11-19 1998-11-19 Separating method and separating equipment of substrate

Publications (1)

Publication Number Publication Date
JP2000156400A true JP2000156400A (en) 2000-06-06

Family

ID=18213160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10328696A Pending JP2000156400A (en) 1998-11-19 1998-11-19 Separating method and separating equipment of substrate

Country Status (1)

Country Link
JP (1) JP2000156400A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6938505B2 (en) * 2002-08-13 2005-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. Chamber wafer detection
KR20080040342A (en) * 2006-11-03 2008-05-08 주식회사 에이디피엔지니어링 Apparatus for absorption pressure measuring and will and method using the same
JP2010109390A (en) * 2003-12-15 2010-05-13 Asml Netherlands Bv Lithographic device and manufacturing method therefor
JP2019004168A (en) * 2018-08-22 2019-01-10 株式会社東京精密 Prober and wafer peeling method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6938505B2 (en) * 2002-08-13 2005-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. Chamber wafer detection
JP2010109390A (en) * 2003-12-15 2010-05-13 Asml Netherlands Bv Lithographic device and manufacturing method therefor
CN102645852A (en) * 2003-12-15 2012-08-22 Asml荷兰有限公司 Lithographic apparatus and device manufacturing method
KR20080040342A (en) * 2006-11-03 2008-05-08 주식회사 에이디피엔지니어링 Apparatus for absorption pressure measuring and will and method using the same
JP2019004168A (en) * 2018-08-22 2019-01-10 株式会社東京精密 Prober and wafer peeling method

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