JP2000147127A5 - - Google Patents

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JP2000147127A5
JP2000147127A5 JP1998336497A JP33649798A JP2000147127A5 JP 2000147127 A5 JP2000147127 A5 JP 2000147127A5 JP 1998336497 A JP1998336497 A JP 1998336497A JP 33649798 A JP33649798 A JP 33649798A JP 2000147127 A5 JP2000147127 A5 JP 2000147127A5
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gamma rays
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region
gamma
designating
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JP1998336497A
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English (en)
Japanese (ja)
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JP2000147127A (ja
JP4318773B2 (ja
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Publication of JP2000147127A5 publication Critical patent/JP2000147127A5/ja
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JP33649798A 1998-11-12 1998-11-12 ポジトロン断層撮像装置 Expired - Fee Related JP4318773B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33649798A JP4318773B2 (ja) 1998-11-12 1998-11-12 ポジトロン断層撮像装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33649798A JP4318773B2 (ja) 1998-11-12 1998-11-12 ポジトロン断層撮像装置

Publications (3)

Publication Number Publication Date
JP2000147127A JP2000147127A (ja) 2000-05-26
JP2000147127A5 true JP2000147127A5 (enExample) 2005-12-15
JP4318773B2 JP4318773B2 (ja) 2009-08-26

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JP33649798A Expired - Fee Related JP4318773B2 (ja) 1998-11-12 1998-11-12 ポジトロン断層撮像装置

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JP (1) JP4318773B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7626171B2 (en) * 2006-01-09 2009-12-01 Koninklijke Philips Electronics N.V. Method of constructing time-in-flight pet images
ATE500621T1 (de) * 2006-04-25 2011-03-15 Koninkl Philips Electronics Nv Implementierung von lawinenfotodioden in (bi) cmos-verfahren
JP6354510B2 (ja) * 2014-10-03 2018-07-11 株式会社島津製作所 放射線断層撮影装置

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