JP2000146783A - Semiconductor evaluation method - Google Patents
Semiconductor evaluation methodInfo
- Publication number
- JP2000146783A JP2000146783A JP10323032A JP32303298A JP2000146783A JP 2000146783 A JP2000146783 A JP 2000146783A JP 10323032 A JP10323032 A JP 10323032A JP 32303298 A JP32303298 A JP 32303298A JP 2000146783 A JP2000146783 A JP 2000146783A
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor
- magnetic
- gaas
- semiconductor film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 57
- 238000011156 evaluation Methods 0.000 title claims abstract description 9
- 230000005291 magnetic effect Effects 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000001179 sorption measurement Methods 0.000 claims abstract 2
- 238000005530 etching Methods 0.000 claims description 4
- 239000000696 magnetic material Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 22
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract description 9
- 239000007864 aqueous solution Substances 0.000 abstract description 5
- 229910052742 iron Inorganic materials 0.000 abstract description 5
- 239000000243 solution Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 70
- 238000000034 method Methods 0.000 description 14
- 238000005259 measurement Methods 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 239000012535 impurity Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011328 necessary treatment Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Sampling And Sample Adjustment (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
(57)【要約】
【課題】 半導体評価方法に関し、エピタキシャル成長
半導体膜の表面に磁性体膜を形成し、その磁性体膜を磁
化することで、分析装置の試料配置箇所にエピタキシャ
ル成長半導体膜を簡単に固定することが基本になってい
る。
【解決手段】 ＧａＡｓ基板１上に分析の対象であるＧ
ａＡｓ膜３をＨＦ水溶液でエッチングされるＡｌＡｓ膜
２を介して成膜してからＧａＡｓ膜３上にＮｉ膜５を形
成し、Ｎｉ膜５を帯磁させ、ＡｌＡｓ膜２をＨＦ水溶液
中でエッチングしてＧａＡｓ膜３をＮｉ膜５とともにＧ
ａＡｓ基板１から分離し、鉄製の基台８とＮｉ膜５とを
対向させ磁力に依る吸着で結合させ、次いで、全体を分
析装置内にセットした後、表出されているＧａＡｓ膜３
の裏面側から測定して半導体の評価を行う。
(57) Abstract: A semiconductor evaluation method, comprising forming a magnetic film on the surface of an epitaxially grown semiconductor film and magnetizing the magnetic film to easily form the epitaxially grown semiconductor film on a sample placement position of an analyzer. Fixing is fundamental. SOLUTION: A G to be analyzed is formed on a GaAs substrate 1.
An aAs film 3 is formed via an AlAs film 2 which is etched with an HF aqueous solution, then a Ni film 5 is formed on the GaAs film 3, the Ni film 5 is magnetized, and the AlAs film 2 is etched in an HF aqueous solution. The GaAs film 3 together with the Ni film 5
After being separated from the aAs substrate 1, the iron base 8 and the Ni film 5 are opposed to each other and bonded by adsorption by magnetic force, and then the whole is set in the analyzer, and then the exposed GaAs film 3 is set.
The semiconductor is evaluated by measuring from the back side of the semiconductor device.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体を評価する
為の測定を行なう際の試料を固定する手段を改善した半
導体評価方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor evaluation method with improved means for fixing a sample when performing a measurement for evaluating a semiconductor.
【０００２】[0002]
【従来の技術】一般に、半導体デバイスは、半導体表面
に極めて近い領域、即ち、表面から高々１００〔Å〕程
度の領域に於ける電子や正孔の振る舞いを利用している
為、半導体の表面に近い領域に於ける諸特性を分析する
ことは、高性能の半導体装置を実現する上で大変重要な
ことである。2. Description of the Related Art Generally, a semiconductor device utilizes the behavior of electrons and holes in a region very close to the semiconductor surface, that is, a region at most about 100 [Å] from the surface. It is very important to analyze various characteristics in a near region for realizing a high-performance semiconductor device.
【０００３】然しながら、ＳＩＭＳ（ｓｅｃｏｎｄａｒ
ｙ ｉｏｎ ｍａｓｓ ｓｐｅｃｔｒｏｓｃｏｐｙ）に
代表される分析では、半導体表面に付着した不純物の影
響に依って、精度が高い測定結果を得ることは困難であ
った。However, SIMS (secondar)
In analysis represented by y ion mass spectroscopy, it was difficult to obtain highly accurate measurement results due to the influence of impurities attached to the semiconductor surface.
【０００４】ところで、前記分析とは無関係であるが、
ＧａＡｓ基板上にＡｌＡｓ膜並びにＧａＡｓ膜をエピタ
キシャル成長し、ＡｌＡｓ膜をフッ化水素酸でエッチン
グすることでＧａＡｓ基板からＧａＡｓ膜を剥離してデ
バイスに応用する技術が知られ、エピタキシャル・リフ
ト・オフと呼ばれている（要すれば、「Ａｐｐｌ．Ｐｈ
ｙｓ．Ｌｅｔｔ．５１（２６），２８ Ｄｅｃｅｍｂｅ
ｒ １９８７ ＥｌｉＹａｂｌｏｎｏｖｉｔｃｈら」、
を参照）。[0004] Incidentally, although unrelated to the above analysis,
A technique is known in which an AlAs film and a GaAs film are epitaxially grown on a GaAs substrate, and the AlAs film is etched with hydrofluoric acid to peel the GaAs film from the GaAs substrate and apply the device to a device. (If necessary, "Appl. Ph
ys. Lett. 51 (26), 28 Decembe
r 1987 EliYablonovitch et al. "
See).
【０００５】本発明者等は、前記エピタキシャル・リフ
ト・オフ法を適用して得られるエピタキシャル成長半導
体膜は極薄膜であることから、その裏面側から前記分析
を行なうことで、表面に付着した不純物の影響を受ける
ことなく、高精度の測定結果が得られるであろう旨を着
想した。The present inventors have found that the epitaxially grown semiconductor film obtained by applying the above-mentioned epitaxial lift-off method is an extremely thin film. The idea was that high-precision measurement results would be obtained without being affected.
【０００６】この場合、薄膜の裏面側から分析を行って
表面側の特性を把握することができるかの懸念は無用で
あり、例えば不純物濃度を調べる為のＳＩＭＳ分析や組
成を調べる為のオージェ電子分光（Ａｕｇｅｒ ｓｐｅ
ｃｔｒｕｍ）分析の場合に有効である。[0006] In this case, there is no need to worry about whether the analysis can be performed from the back side of the thin film and the characteristics on the front side can be grasped. For example, SIMS analysis for examining impurity concentration or Auger electron beam for examining the composition. Spectroscopy (Auger spe
(ctrum) analysis.
【０００７】図５はＳＩＭＳでカーボンの濃度を調べた
結果を表す線図であり、横軸には表面からの深さ、縦軸
にはカーボン濃度をそれぞれ採ってある。尚、図には半
導体ウエハの構成が付記してある。FIG. 5 is a diagram showing the result of examining the carbon concentration by SIMS. The horizontal axis shows the depth from the surface, and the vertical axis shows the carbon concentration. In the drawings, the configuration of the semiconductor wafer is additionally shown.
【０００８】図に於いて、ラインＡは一様にドーピング
した場合の実際のカーボン濃度プロファイルであると
し、表面からカーボンの濃度を測定した場合、ラインＢ
に見られるように最表面に付着したカーボンの影響があ
る深さ、図では２００〔Å〕程度まで現れるが、裏面か
ら測定した場合、ラインＣに見られるように最表面のカ
ーボンの影響を殆ど受けることなく、深さ５０〔Å〕程
度までの領域について精度良好な濃度を得ることができ
る。In the figure, it is assumed that a line A is an actual carbon concentration profile when uniformly doped, and a line B is obtained when the carbon concentration is measured from the surface.
As can be seen from the figure, the depth of the influence of the carbon adhering to the outermost surface, up to about 200 [Å] in the figure, appears. It is possible to obtain a highly accurate density in a region up to a depth of about 50 [Å] without receiving the same.
【０００９】このように、エピタキシャル・リフト・オ
フされたエピタキシャル成長半導体膜の裏面側から分析
を行うことについては何ら問題ないのであるが、その薄
膜を分析装置にセットする為には、何らかの手段で固着
しなければならず、それが甚だ困難である。As described above, there is no problem in performing the analysis from the back side of the epitaxially grown semiconductor film which has been lifted off. However, in order to set the thin film in the analyzer, it is necessary to fix the thin film by some means. And it is extremely difficult.
【００１０】[0010]
【発明が解決しようとする課題】本発明では、基板上に
エピタキシャル成長された半導体膜をエピタキシャル・
リフト・オフ法で剥離し、そのエピタキシャル成長半導
体膜を分析装置に簡単且つ容易にセットできるようにし
ようとする。According to the present invention, a semiconductor film epitaxially grown on a substrate is epitaxially grown.
It is intended to enable the epitaxially grown semiconductor film to be easily and easily set in an analyzer by peeling off by a lift-off method.
【００１１】[0011]
【課題を解決するための手段】本発明では、エピタキシ
ャル成長半導体膜の表面に磁性体膜を形成し、その磁性
体膜を磁化することで、分析装置の試料配置箇所にエピ
タキシャル成長半導体膜を簡単に固定することが基本に
なっている。According to the present invention, a magnetic film is formed on the surface of an epitaxially grown semiconductor film, and the magnetic film is magnetized, so that the epitaxially grown semiconductor film can be easily fixed to a sample placement position of an analyzer. To do that is fundamental.
【００１２】前記したところから、本発明に依る半導体
評価方法に於いては、（１）基板（例えばＧａＡｓ基板
１）上に分析の対象である半導体膜（例えばＧａＡｓ膜
３）を該半導体膜とエッチャントを異にする被膜（例え
ばＡｌＡｓ膜２）を介して成膜してから該半導体膜上に
磁性体膜（例えばＮｉ膜５）を形成し、次いで、全体を
磁界に曝して前記磁性体膜を帯磁させ、次いで、前記被
膜を溶液（例えばＨＦ水溶液）中でエッチングして分析
の対象である半導体膜を前記磁性体膜とともに基板から
分離し、次いで、磁性体からなる基台（例えば鉄製の基
台８）と前記半導体膜上の磁性体膜とを対向させ磁力に
依る吸着で結合させ、次いで、全体を分析装置内にセッ
トした後、表出されている前記半導体膜の裏面側から測
定して半導体の評価を行うことを特徴とするか、又は、As described above, in the semiconductor evaluation method according to the present invention, (1) a semiconductor film (for example, a GaAs film 3) to be analyzed is placed on a substrate (for example, a GaAs substrate 1). After forming a film with a different etchant (for example, an AlAs film 2), a magnetic film (for example, a Ni film 5) is formed on the semiconductor film, and then the entire magnetic film is exposed to a magnetic field. Then, the coating is etched in a solution (for example, HF aqueous solution) to separate the semiconductor film to be analyzed from the substrate together with the magnetic film, and then a base made of a magnetic material (for example, iron The base 8) and the magnetic film on the semiconductor film are opposed to each other and bonded by suction by a magnetic force. Then, the whole is set in an analyzer, and then measured from the back side of the exposed semiconductor film. Semiconductor review Or and performing, or,
【００１３】（２）前記（１）に於いて、分析の対象で
ある半導体膜が複数の半導体膜の積層体であることを特
徴とする。(2) In the above (1), the semiconductor film to be analyzed is a laminate of a plurality of semiconductor films.
【００１４】前記手段を採ることに依り、エピタキシャ
ル・リフト・オフ法で基板から分離したエピタキシャル
成長半導体膜の裏面側を表出させた状態で分析装置に容
易且つ簡単に固定して測定を行うことができ、その測定
結果は、エピタキシャル成長半導体膜の表面に於ける不
純物の影響を受けないので、高精度の評価を行うことが
可能である。By employing the above-described means, it is possible to easily and easily fix the epitaxial growth semiconductor film separated from the substrate by the epitaxial lift-off method to the analyzer in a state where the back surface is exposed, and perform the measurement. Since the measurement result is not affected by impurities on the surface of the epitaxially grown semiconductor film, highly accurate evaluation can be performed.
【００１５】[0015]
【発明の実施の形態】図１乃至図４は本発明に於ける一
実施の形態を説明する為のプロセス途中にある半導体ウ
エハを表す要部切断側面図であり、以下、これ等の図を
参照しつつプロセスを説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIGS. 1 to 4 are cutaway side views of a main part showing a semiconductor wafer in the middle of a process for explaining an embodiment of the present invention. The process will be described with reference to FIG.
【００１６】図１（Ａ）参照 １−（１） ＭＯＣＶＤ（ｍｅｔａｌｏｒｇａｎｉｃ ｃｈｅｍｉｃ
ａｌ ｖａｐｏｕｒｄｅｐｏｓｉｔｉｏｎ）法を適用す
ることに依り、直径約７．６２〔ｃｍ〕（３インチ）の
ＧａＡｓ基板１上に厚さ１０００〔Å〕のＡｌＡｓ膜
２、厚さ５０００〔Å〕のＧａＡｓ膜３、厚さが５０
〔Å〕のＡｌＧａＡｓ膜４を成長させる。尚、ＡｌＧａ
Ａｓ膜４は必須ではない。1 (A) 1- (1) MOCVD (metalorganic chemical)
An AlAs film 2 having a thickness of 1000 [Å] and a GaAs film 3 having a thickness of 5000 [Å] are formed on a GaAs substrate 1 having a diameter of about 7.62 [cm] (3 inches) by applying an al vapor deposition method. , Thickness is 50
[Å] The AlGaAs film 4 is grown. In addition, AlGa
The As film 4 is not essential.
【００１７】図１（Ｂ）参照 ウエハの直径約７．６２〔ｃｍ〕を１／４ずつに劈開し
てから、真空蒸着法を適用することに依り、ＡｌＧａＡ
ｓ膜４上に厚さ１０００〔Å〕のＮｉ膜５を成膜する。Referring to FIG. 1 (B), a wafer having a diameter of about 7.62 [cm] is cleaved into quarters, and then AlGaA is formed by applying a vacuum deposition method.
A Ni film 5 having a thickness of 1000 [１０００] is formed on the s film 4.
【００１８】図２参照 ２−（１） Ｎｉ膜５を被着したウエハを電磁石６内にセットし、１
０〔ｋＯｅ〕の磁界を発生させてＮｉ膜５を帯磁させ
る。Referring to FIG. 2, 2- (1) the wafer having the Ni film 5 deposited thereon is set in the electromagnet 6 and
A magnetic field of 0 [kOe] is generated to magnetize the Ni film 5.
【００１９】図３（Ａ）参照 ３−（１） 有機溶剤に溶かしたワックスをＮｉ膜５上に塗布し、温
度を１５０〔℃〕、時間を３０〔分〕としてベーキング
を行ないワックス膜７とする。Referring to FIG. 3A, 3- (1) a wax dissolved in an organic solvent is applied on the Ni film 5 and baked at a temperature of 150 ° C. for a time of 30 minutes to form a wax film 7. I do.
【００２０】ワックス膜７を用いる理由は、ＧａＡｓ膜
３に応力を発生させる為であり、若し、ワックス膜７を
用いないと、ＨＦ水溶液に浸漬することでＡｌＡｓ層２
をエッチングしてＧａＡｓ膜３をＧａＡｓ基板１から剥
離する際、ＧａＡｓ基板１とＧａＡｓ層３との間に気泡
が入ってＡｌＡｓ層２がエッチングされない状態となる
が、ワックス膜７を用いた場合には、ＧａＡｓ膜３に応
力が加わることで反りを生じて気泡は除去されるように
なるので、エッチングが阻害されるのを防止できる。The reason for using the wax film 7 is to generate stress in the GaAs film 3. If the wax film 7 is not used, the AlAs layer 2 is immersed in an HF aqueous solution.
When the GaAs film 3 is separated from the GaAs substrate 1 by etching, the AlAs layer 2 is not etched by bubbles between the GaAs substrate 1 and the GaAs layer 3. In the method, since a stress is applied to the GaAs film 3 to cause a warp and bubbles are removed, it is possible to prevent the etching from being hindered.
【００２１】３−（２） ウエハを更に劈開して一つが５〔ｍｍ〕角程度の大きさ
となるようにすると共に劈開面を表出して試料とする。
尚、図では試料もウエハも同じ大きさに表現してある。3- (2) The wafer is further cleaved so that each one has a size of about 5 [mm] square, and the cleaved surface is exposed to prepare a sample.
In the drawing, both the sample and the wafer are represented in the same size.
【００２２】図３（Ｂ）参照 ３−（３） 試料をＨＦ水溶液（５０〔％〕）中に２〔時間〕程度浸
漬してＡｌＡｓ膜２のエッチングし、いわゆるエピタキ
シャル・リフト・オフを行う。3- (3) The sample is immersed in an HF aqueous solution (50%) for about 2 hours to etch the AlAs film 2, so-called epitaxial lift-off is performed.
【００２３】図４（Ａ）参照 ４−（１） 図には、ＡｌＡｓ膜２が完全にエッチングされてＧａＡ
ｓ膜３から上の部分がＧａＡｓ基板１と分離されて独立
した状態が示されている。FIG. 4 (A) 4- (1) FIG. 4 shows that the AlAs film 2 is completely etched and GaAs
The portion above the s film 3 is separated from the GaAs substrate 1 and is independent.
【００２４】図４（Ｂ）参照 ４−（２） 試料を有機溶剤中に浸漬してＮｉ膜５上のワックス膜７
を除去する。Referring to FIG. 4B, 4- (2) the sample is immersed in an organic solvent to form a wax film 7 on the Ni film 5.
Is removed.
【００２５】図４（Ｃ）参照 ４−（３） 有機溶剤中に磁性体である鉄製の基台８を入れてＮｉ膜
５と対向させると試料は基台８に張り付いた状態となる
ので、これを取り出して乾燥など所要の処置を施してか
ら分析装置にマウントする。4 (C) 4- (3) When the iron base 8 made of a magnetic material is put in an organic solvent and opposed to the Ni film 5, the sample is stuck to the base 8. Then, it is taken out and subjected to necessary treatment such as drying, and then mounted on the analyzer.
【００２６】本発明に於いては、前記実施の形態に限ら
れず、他に多くの改変を実現することが可能である。In the present invention, the present invention is not limited to the above embodiment, and many other modifications can be realized.
【００２７】例えば、前記実施の形態で用いたＮｉ膜５
は、他の材料、例えばＣｏ，Ｆｅ，Ｍｎなどの磁性体に
代替することができる。For example, the Ni film 5 used in the above embodiment is used.
Can be replaced with another material, for example, a magnetic material such as Co, Fe, and Mn.
【００２８】また、磁性体そのものを用いること以外
に、強磁性体金属を混在させたポリイミドやレジストを
必要箇所に塗布し、電磁石で磁化させながら硬化して磁
性体被膜としても同効である。In addition to using the magnetic substance itself, polyimide or a resist mixed with a ferromagnetic metal is applied to a necessary portion, and cured while being magnetized by an electromagnet, which is also effective as a magnetic film.
【００２９】[0029]
【発明の効果】本発明に依る半導体評価方法に於いて
は、基板上に分析の対象である半導体膜を該半導体膜と
エッチャントを異にする被膜を介して成膜してから該半
導体膜上に磁性体膜を形成し、全体を磁界に曝して前記
磁性体膜を帯磁させ、前記被膜を溶液中でエッチングし
て分析の対象である半導体膜を前記磁性体膜とともに基
板から分離し、磁性体からなる基台と前記半導体膜上の
磁性体膜とを対向させ磁力に依る吸着で結合させ、全体
を分析装置内にセットした後、表出されている前記半導
体膜の裏面側から測定して半導体の評価を行う。In the semiconductor evaluation method according to the present invention, a semiconductor film to be analyzed is formed on a substrate via a film having a different etchant from the semiconductor film, and then is formed on the semiconductor film. Forming a magnetic film on the substrate, exposing the whole to a magnetic field to magnetize the magnetic film, etching the coating in a solution to separate the semiconductor film to be analyzed from the substrate together with the magnetic film, The base made of the body and the magnetic film on the semiconductor film are opposed to each other and coupled by suction by magnetic force, and after setting the whole in the analyzer, measurement is performed from the back side of the exposed semiconductor film. To evaluate semiconductors.
【００３０】前記構成を採ることに依り、エピタキシャ
ル・リフト・オフ法で基板から分離したエピタキシャル
成長半導体膜の裏面側を表出させた状態で分析装置に容
易且つ簡単に固定して測定を行うことができ、その測定
結果は、エピタキシャル成長半導体膜の表面に於ける不
純物の影響を受けないので、高精度の評価を行うことが
可能である。By adopting the above configuration, it is possible to easily and simply fix the semiconductor device to the analyzer with the back surface side of the epitaxially grown semiconductor film separated from the substrate exposed by the epitaxial lift-off method and perform the measurement. Since the measurement result is not affected by impurities on the surface of the epitaxially grown semiconductor film, highly accurate evaluation can be performed.
【図１】本発明に於ける一実施の形態を説明する為のプ
ロセス途中にある半導体ウエハを表す要部切断側面図で
ある。FIG. 1 is a fragmentary side view showing a semiconductor wafer in the middle of a process for describing an embodiment of the present invention.
【図２】本発明に於ける一実施の形態を説明する為のプ
ロセス途中にある半導体ウエハを表す要部切断側面図で
ある。FIG. 2 is a fragmentary side view showing a semiconductor wafer in the process of explaining an embodiment of the present invention.
【図３】本発明に於ける一実施の形態を説明する為のプ
ロセス途中にある半導体ウエハを表す要部切断側面図で
ある。FIG. 3 is a cutaway side view of a main part showing a semiconductor wafer in the middle of a process for explaining an embodiment of the present invention.
【図４】本発明に於ける一実施の形態を説明する為のプ
ロセス途中にある半導体ウエハを表す要部切断側面図で
ある。FIG. 4 is a cutaway side view of a main part showing a semiconductor wafer in the middle of a process for explaining an embodiment of the present invention.
【図５】ＳＩＭＳでカーボンの濃度を調べた結果を表す
線図である。FIG. 5 is a diagram showing a result of examining a carbon concentration by SIMS.
１ ＧａＡｓ基板 ２ ＡｌＡｓ膜 ３ ＧａＡｓ膜 ４ ＡｌＧａＡｓ膜 ５ Ｎｉ膜 ６ 電磁石 ７ ワックス膜 ８ 鉄製の基台 DESCRIPTION OF SYMBOLS 1 GaAs substrate 2 AlAs film 3 GaAs film 4 AlGaAs film 5 Ni film 6 Electromagnet 7 Wax film 8 Iron base
フロントページの続き Ｆターム(参考） 2G001 AA03 BA07 BA08 CA03 GA01 GA10 JA12 KA12 LA11 MA05 QA01 RA02 RA04 RA08 RA20 4M106 AA10 BA20 CB01 DG24 DJ31Continued on the front page F term (reference) 2G001 AA03 BA07 BA08 CA03 GA01 GA10 JA12 KA12 LA11 MA05 QA01 RA02 RA04 RA08 RA20 4M106 AA10 BA20 CB01 DG24 DJ31
Claims (2)
導体膜とエッチャントを異にする被膜を介して成膜して
から該半導体膜上に磁性体膜を形成し、 次いで、全体を磁界に曝して前記磁性体膜を帯磁させ、 次いで、前記被膜を溶液中でエッチングして分析の対象
である半導体膜を前記磁性体膜とともに基板から分離
し、 次いで、磁性体からなる基台と前記半導体膜上の磁性体
膜とを対向させ磁力に依る吸着で結合させ、 次いで、全体を分析装置内にセットした後、表出されて
いる前記半導体膜の裏面側から測定して半導体の評価を
行うことを特徴とする半導体評価方法。A semiconductor film to be analyzed is formed on a substrate via a film having a different etchant from the semiconductor film, and then a magnetic film is formed on the semiconductor film. Exposure to a magnetic field to magnetize the magnetic film, and then etching the coating in a solution to separate the semiconductor film to be analyzed from the substrate together with the magnetic film, and then a base made of a magnetic material The magnetic film on the semiconductor film is opposed to each other and bonded by adsorption by magnetic force. Then, after setting the whole in an analyzer, the semiconductor film is evaluated by measuring from the back surface side of the exposed semiconductor film. A semiconductor evaluation method.
膜の積層体であることを特徴とする請求項１記載の半導
体評価方法。2. The semiconductor evaluation method according to claim 1, wherein the semiconductor film to be analyzed is a laminate of a plurality of semiconductor films.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10323032A JP2000146783A (en) | 1998-11-13 | 1998-11-13 | Semiconductor evaluation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10323032A JP2000146783A (en) | 1998-11-13 | 1998-11-13 | Semiconductor evaluation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000146783A true JP2000146783A (en) | 2000-05-26 |
Family
ID=18150362
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10323032A Withdrawn JP2000146783A (en) | 1998-11-13 | 1998-11-13 | Semiconductor evaluation method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000146783A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007025961A1 (en) * | 2005-08-31 | 2007-03-08 | BAM Bundesanstalt für Materialforschung und -prüfung | Method for preparation of a planar sample body and preparation |
| TWI452621B (en) * | 2010-11-01 | 2014-09-11 | Univ Nat Cheng Kung | Separation method of epitaxial element |
-
1998
- 1998-11-13 JP JP10323032A patent/JP2000146783A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007025961A1 (en) * | 2005-08-31 | 2007-03-08 | BAM Bundesanstalt für Materialforschung und -prüfung | Method for preparation of a planar sample body and preparation |
| TWI452621B (en) * | 2010-11-01 | 2014-09-11 | Univ Nat Cheng Kung | Separation method of epitaxial element |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Dumin | Deformation of and stress in epitaxial silicon films on single‐crystal sapphire | |
| Levy et al. | Epitaxial liftoff of thin oxide layers: Yttrium iron garnets onto GaAs | |
| US6803240B1 (en) | Method of measuring crystal defects in thin Si/SiGe bilayers | |
| JP2000146783A (en) | Semiconductor evaluation method | |
| Fronius et al. | Elimination of GaAs oval defects and high-throughput fabrication of selectively doped AlxGa1− xAs/GaAs heterostructures by MBE | |
| JPH09246341A (en) | Sample for damage evaluation of semiconductor wafer and damage evaluation method using this sample | |
| JP2790109B2 (en) | Sample preparation method for component analysis from the back side | |
| Keogh et al. | Digital etching of III-N materials using a two-step Ar/KOH technique | |
| JPS63129632A (en) | Pattern formation of insulating film and formation of gate electrode of field-effect transistor utilizing said formation | |
| JP3405682B2 (en) | Nondestructive inspection method for semiconductor epitaxial film | |
| JP3783851B2 (en) | Method for sorting semiconductor wafers | |
| Erman et al. | Spatially resolved ellipsometry for semiconductor process control: Application to GaInAs MIS structures | |
| JP2626494B2 (en) | Evaluation method of etching damage | |
| Wen | Study of ohmic contact formation on AlGaN/GaN heterostructures | |
| JP2004340741A (en) | Magnetic probe and method of manufacturing the same | |
| Schleser et al. | Influence of HCl etching on the electronic properties of LAO-defined nanostructures | |
| Oxland | An HBT magnetic sensor with integrated 3-dimensional magnetic structures | |
| Walker Jr | The role of defects on Schottky and Ohmic contact characteristics for GaN and AlGaN/GaN high-electron mobility transistors | |
| SIGMON et al. | Development of process technology for the fabrication of mesoscopic devices(Final Technical Report, 1 Jul. 1992- 31 May 1995) | |
| JP5961076B2 (en) | Method for evaluating the surface of an object | |
| Morello et al. | Evaluation of induced damage by CH4/H2 reactive ion etching on InP: n++ | |
| HU et al. | An in-situ spectroscopic ellipsometry study of the electron cyclotron resonance plasma oxidation of silicon and interfacial | |
| CN117119874A (en) | Spin charge conversion structure, preparation and testing method and related device | |
| Decker | GaAs and InAs Hall effect devices for nondestructive evaluation | |
| Zappe et al. | Electrical Damage Due to Low Energy Plasma Processing of GaAs Structures |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20060207 |