JP2000146711A - Temperature sensor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a temperature sensor device which has low current consumption and generates small noise. SOLUTION: A 1st fixed voltage which is nearly constant irrelevantly to temperature variation is converted to a 1st current by using a 1st resistance 10 having 1st temperature characteristics and to a 2nd current by using 2nd resistances 11 to 13 having 2nd temperature characteristics, and the difference current between the 1st and 2nd currents is converted to a voltage by a 3rd resistance 13 which has a nearly constant resistance value irrelevantly to temperature variation. The 2nd resistances 11 to 13 are composed of parallel-connected resistances and at least some of the resistances are provided so that Zener diodes 15 and 16 are connected in series.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a temperature sensor device capable of generating a stable output voltage while suppressing noise with low current consumption. Further, the present invention provides a semiconductor integrated circuit having a temperature sensor device,
The technical field is a temperature-compensated crystal oscillator and a mobile device (mobile phone, PHS, PDA, etc.) using the same, and it is used particularly for the purpose of detecting the temperature of the device and compensating the temperature of the frequency.

[0002]

2. Description of the Related Art As a temperature sensor device formed on a semiconductor integrated circuit, a device shown in FIG. 10 has been conventionally used. This temperature sensor device comprises a PNP transistor 21
To 23, NPN transistors 24 and 25, and resistors 26 to 2
By applying a power supply voltage to the power supply voltage terminal 108, a current that increases in proportion to the ambient temperature Ta is generated in the PNP transistor 21. Assuming that the collector current of the PNP transistor 23 constituting the current mirror circuit together with the PNP transistor 21 is It, the collector current It increases in proportion to the ambient temperature Ta, is converted into a voltage by the resistor 28, and is converted from the output terminal 109 to the absolute temperature. A proportional voltage can be obtained.

Hereinafter, the details of this temperature sensor device will be described. The resistance value of the resistor 26 is R1, and this resistor 2
6, the current I1 is determined by the base-emitter voltage of the NPN transistors 24 and 25 and the resistance 2
6 is determined by the resistance value R1. Here, K is Boltzmann's constant, T is absolute temperature, q is Coulomb constant, and N is NPN.
Assuming that the number of the transistors 24 (or the size of the transistor 24 as compared with other mirror transistors) is expressed as I1 = (KT / q × lnN) / R1.

Here, when the change in the resistance value R1 of the resistor 26 (temperature coefficient of resistance) is small with respect to the temperature change, the value of the current It is proportional to the absolute temperature T. This current I1 is PN
The current It is mirrored by the P transistors 21 and 23 and the current It
Becomes When the voltage Vout generated in the resistor 28 when the current It is applied to the resistor 28 having the resistance value R3 is obtained, the voltage Vout is expressed as: Vout = It × R3 = {(KT / q × lnN) / R1} × R3 is there. If the temperature characteristics of the resistor 26 and the resistor 28 are the same, Vout is proportional to the absolute temperature T. Absolute temperature T
In order to determine the rate of change of the voltage Vout, the voltage Vout is differentiated with respect to the absolute temperature T.
3) is obtained, and this value is given as sensitivity to temperature. Thus, a voltage generating circuit or a temperature sensor device having a primary temperature characteristic with respect to the absolute temperature T is realized by the values of the number N of the resistors 26 and 28 and the NPN transistor 24.

At this time, if the total current supplied from the power supply voltage terminal 108 is Icc, there is a relationship of R3 × Icc = 3.6 × T (mV).

[0006]

However, the current and voltage generated in the above-mentioned conventional temperature sensor device include noise, and there is a problem that if the noise is reduced, the current consumption increases. .

Accordingly, it is an object of the present invention to provide a temperature sensor device with low current consumption and low noise.

[0008]

According to a first aspect of the present invention, there is provided a temperature sensor device having a substantially constant first temperature regardless of a temperature change.
A first fixed voltage generating circuit for generating a fixed voltage of
And a first voltage-current conversion circuit that converts the first fixed voltage into a first current with a first resistor having a first temperature characteristic and outputs the first fixed voltage. A second voltage-current conversion circuit for converting the first fixed voltage as an input into a second current with a second resistor having a second temperature characteristic and outputting the second current, and a first and a second voltage-current conversion circuit A current subtraction circuit that receives the first and second currents respectively output from the circuit and outputs a difference current between the first and second currents; and a temperature subtraction circuit having one end connected to the output terminal of the current subtraction circuit. A third resistance having a substantially constant resistance value, a temperature detection voltage output terminal provided at one end of the third resistance, and a second resistance connected to the other end of the third resistance and substantially constant regardless of temperature change. And a second fixed voltage generation circuit for generating a fixed voltage of the first and second resistors. At least one or Re is comprised of a plurality of resistors connected in parallel, at least some of the plurality of resistors are provided in a state in which the switch elements are connected in series.

According to this configuration, the first fixed voltage is set to the first fixed voltage.
The first temperature characteristic and the second temperature characteristic are obtained by converting the two currents into currents with the first resistor having the first temperature characteristic and the second resistor having the second temperature characteristic, respectively. Are different from each other, a current having a difference between the two temperature characteristics can be obtained. Further, the temperature characteristic of the output voltage can be determined by selecting the temperature characteristic of the current and the temperature characteristic of the third resistor which is the load resistance.

Specifically, for example, the value of a first resistor having a first temperature characteristic is constant irrespective of a temperature change,
When the value of the second resistor having the second temperature characteristic increases with an increase in temperature, the difference current obtained by subtracting the current having the first temperature characteristic from the current having the second temperature characteristic is equal to the temperature. It increases with the rise, and the difference current is
By applying the voltage to the other end of the third resistor having the first temperature characteristic, which is connected to the fixed voltage, a voltage that increases with an increase in temperature with respect to the second fixed voltage can be extracted. If these resistance values are substantially equal, even if noise is present in the first fixed voltage, the noise can be canceled by the difference current. By applying this current to the third resistor, which is a load resistor, a voltage from which noise has been canceled can be generated.

Further, since the method of producing the first resistor having the first temperature characteristic and the method of producing the second resistor having the second temperature characteristic are usually different, the resistance values of the first and second resistors are made equal. It is difficult. Therefore, a resistor having any one of the temperature characteristics is constituted by a plurality of resistors connected in parallel, at least a part of the plurality of resistors is provided in a state where the switch element is connected in series, and the switch element is selectively turned on. By doing so, the resistance value can be adjusted to be substantially equal to the resistance value of the other resistor having the temperature characteristic.

Specifically, in a manufacturing process of a semiconductor integrated circuit, two types of impurity concentrations are diffused to form a first resistor having a first temperature characteristic and a second resistor having a second temperature characteristic. Can be made. However, when the impurity concentration and the diffusion time are different, it is difficult to equalize the resistance values of the two types of resistors. Therefore, a plurality of resistors having one impurity concentration are previously connected in parallel on the semiconductor integrated circuit with at least a part of the resistors being interposed therebetween, and then the plurality of resistors are selectively turned on. In which a current flows in parallel. Thus, although the temperature characteristics are different,
Two types of resistors having substantially equal resistance values can be provided on the semiconductor integrated circuit, and by using this means, a voltage that changes according to temperature and has low noise can be generated.

According to a second aspect of the present invention, there is provided a temperature sensor device according to the first aspect, wherein the switch element is a Zener diode.

According to this configuration, the Zener diode can be made conductive by applying a voltage or flowing a current between the anode and the cathode of the Zener diode, and the application of the voltage or the supply of the current to the Zener diode is interrupted. By simply changing the connection state of the plurality of resistors, it is possible to easily adjust the combined resistance value of the plurality of resistors.

According to a third aspect of the present invention, in the temperature sensor device according to the first aspect, the switch element is a MOS transistor.

According to this configuration, the MOS transistor can be made conductive by applying the gate voltage of the MOS transistor, and the connection state of the plurality of resistors can be easily established only by interrupting the application of the gate voltage to the MOS transistor. Can be adjusted to adjust the combined resistance value of the plurality of resistors.

According to a fourth aspect of the present invention, there is provided the temperature sensor device according to the first, second or third aspect, wherein the first fixed voltage generating circuit has an emitter connected to a power supply voltage terminal, and a base connected to the base. A first bipolar transistor of the first conductivity type, the collector of which is commonly connected, and a second bipolar transistor of the first conductivity type, the emitter of which is connected to the power supply voltage terminal and the base of which is connected to the base of the first bipolar transistor A transistor, a third bipolar transistor of a second conductivity type having a collector connected to the collector of the first bipolar transistor, and a collector connected to the collector of the second bipolar transistor;
A base is connected to the base of the third bipolar transistor, a fourth bipolar transistor of the second conductivity type having a base and a collector connected in common, and a fourth bipolar transistor connected between the emitters of the third and fourth bipolar transistors. 4
A fifth bipolar transistor having a collector and a base connected to the emitter of the fourth bipolar transistor, and a fifth bipolar transistor connected between the emitter of the fifth bipolar transistor and a ground terminal. 5 and a fixed voltage output terminal connected to the emitter of the fourth bipolar transistor.

According to this configuration, by connecting the fifth resistor to the fifth bipolar transistor and connecting the fifth resistor to the emitter of the fourth transistor, the fifth resistor for outputting a stable voltage with respect to a temperature change can be obtained. A relatively small resistance value can be adopted as the resistance value of the resistor 5. Since noise is proportional to the square root of the resistance involved, noise generated at the fixed voltage output terminal can be suppressed.

According to a fifth aspect of the present invention, there is provided a temperature sensor device, wherein a first fixed voltage generating circuit for generating a substantially constant first fixed voltage irrespective of a temperature change, and a first fixed voltage input to the first fixed voltage generating circuit. A voltage-current conversion circuit for converting the current into a current corresponding to a fixed voltage of 1 and outputting the current, and a current proportional to the output current of the voltage-current conversion circuit, with the emitters connected to the power supply voltage terminals and the bases connected in common, respectively. Flowing first and second bipolar transistors of a first conductivity type;
A third bipolar transistor having a collector and a base connected to the collector of the second bipolar transistor; a collector connected to the collector of the second bipolar transistor; and a base connected to the base of the third bipolar transistor. A fourth bipolar transistor of the second conductivity type connected thereto, a first resistor having a first temperature characteristic, connected between an emitter of the third bipolar transistor and a ground terminal, and a second temperature. A second resistor having characteristics and connected between the emitter of the fourth bipolar transistor and the ground terminal, and a temperature change having one end connected to the commonly connected collectors of the second and fourth bipolar transistors. A third resistor having a substantially constant resistance value, a temperature detection voltage output terminal provided at one end of the third resistor, and a third resistor. A second fixed voltage generating circuit that is connected to the other end of the resistor and generates a substantially constant second fixed voltage regardless of a temperature change, wherein at least one of the first and second resistors is connected in parallel. A plurality of resistors are connected, and at least a part of the plurality of resistors is provided in a state where the switch elements are connected in series.

According to this configuration, the first resistor having the first temperature characteristic is connected to the emitter of the third bipolar transistor, and the second resistor having the second temperature characteristic is connected to the emitter of the fourth bipolar transistor. A resistor is connected to convert the voltage generated in the second resistor into a current, and a current proportional to the output current of the voltage-current conversion circuit is discharged from the second transistor and applied to the collector of the fourth transistor. Things. Thus, by extracting a current from the fourth bipolar transistor, a current having a characteristic of a difference between the first temperature characteristic and the second temperature characteristic can be extracted. By flowing the current into the other end of the third resistor connected to the output terminal of the fixed voltage generation circuit, it is possible to generate a voltage that changes in accordance with the temperature and has low noise with reference to the second fixed voltage. .

As described above, two types of resistors having different temperature characteristics but substantially equal resistance values can be provided on the semiconductor integrated circuit. It is possible to generate a voltage that changes according to the temperature and has low noise.

According to a sixth aspect of the present invention, there is provided a temperature sensor device according to the fifth aspect, wherein the switch element is a Zener diode.

According to this configuration, the Zener diode can be made conductive by applying a voltage or flowing a current between the anode and the cathode of the Zener diode, and the application of the voltage or the supply of the current to the Zener diode is interrupted. By simply changing the connection state of the plurality of resistors, it is possible to easily adjust the combined resistance value of the plurality of resistors.

According to a seventh aspect of the present invention, in the temperature sensor device according to the fifth aspect, the switch element is a MOS transistor.

According to this configuration, the MOS transistor can be made conductive by applying the gate voltage of the MOS transistor, and the connection state of the plurality of resistors can be easily established only by interrupting the application of the gate voltage to the MOS transistor. Can be adjusted to adjust the combined resistance value of the plurality of resistors.

The temperature sensor device according to claim 8 of the present invention is the temperature sensor device according to claim 5, 6, or 7, wherein the first fixed voltage generating circuit has an emitter connected to a power supply voltage terminal, and a base connected to the base. A fifth bipolar transistor of the first conductivity type, the collector of which is commonly connected, and a sixth bipolar transistor of the first conductivity type, the emitter of which is connected to the power supply voltage terminal and the base of which is connected to the base of the fifth bipolar transistor. A transistor, a seventh bipolar transistor of the second conductivity type having a collector connected to the collector of the fifth bipolar transistor, and a collector connected to the collector of the sixth bipolar transistor;
An eighth bipolar transistor of the second conductivity type, the base of which is connected to the base of the seventh bipolar transistor, and the base and the collector of which are commonly connected, and the eighth bipolar transistor connected between the emitters of the seventh and eighth bipolar transistors. 4
A ninth bipolar transistor of the second conductivity type, the collector and the base of which are connected to the emitter of the eighth bipolar transistor, and the ninth bipolar transistor connected between the emitter of the ninth bipolar transistor and the ground terminal. 5 and a fixed voltage output terminal connected to the emitter of the eighth bipolar transistor.

According to this configuration, by connecting the fifth resistor and the ninth bipolar transistor to each other and connecting the fifth resistor to the emitter of the eighth transistor, the fifth resistor for outputting a stable voltage against a temperature change can be obtained. A relatively small resistance value can be adopted as the resistance value of the resistor 5. Since noise is proportional to the square root of the resistance involved, noise generated at the fixed voltage output terminal can be suppressed.

According to a ninth aspect of the present invention, there is provided a temperature sensor device comprising: a first fixed voltage generating circuit for generating a substantially fixed first fixed voltage regardless of a temperature change; A voltage-current conversion circuit for converting the current into a current corresponding to the fixed voltage of 1 and outputting the current, and a first and a first conductivity type of which the bases are connected in common and flow currents proportional to the output current of the voltage-current conversion circuit, respectively. A second bipolar transistor; a third bipolar transistor of a second conductivity type having a collector and a base connected to the collector of the first bipolar transistor; a collector connected to the collector of the second bipolar transistor; A fourth bipolar transistor of a second conductivity type having a base connected to the base of the third bipolar transistor; a third bipolar transistor having a first temperature characteristic; A first resistor connected between the emitter of the bipolar transistor and the ground terminal, and a second resistor having a second temperature characteristic and connected between the emitter of the fourth bipolar transistor and the ground terminal A third resistor having a second temperature characteristic and connected between an emitter of the first bipolar transistor and a power supply voltage terminal;
A fourth resistor connected between the emitter of the second bipolar transistor and the power supply voltage terminal, having a temperature characteristic of
A fifth resistor having one end connected to a commonly connected collector of the second and fourth bipolar transistors and having a substantially constant resistance value regardless of a temperature change; and a temperature detection voltage output provided at one end of the fifth resistor. A second fixed voltage generation circuit connected to the other end of the fifth resistor and generating a substantially constant second fixed voltage regardless of a temperature change, wherein any one of the first and second resistors is provided. Or at least one of the first plurality of resistors is connected in parallel, and at least a part of the first plurality of resistors is provided in a state where the first switch element is connected in series; At least one of the fourth resistors is composed of a second plurality of resistors connected in parallel, and at least a part of the second plurality of resistors is connected in series with the second plurality of resistors.
Are provided in a connected state.

According to this configuration, the first resistor having the first temperature characteristic is connected to the emitter of the third bipolar transistor, and the second resistor having the second temperature characteristic is connected to the emitter of the fourth bipolar transistor. A resistor is connected, a voltage generated in the second resistor is converted to a current, a third resistor having a second temperature characteristic is connected to an emitter of the first bipolar transistor, and an emitter of the second bipolar transistor is connected. Is connected to a fourth resistor having a first temperature characteristic, and a voltage generated in the fourth resistor is converted into a current.
The current of the collector of the bipolar transistor is supplied to the collector of the fourth bipolar transistor.
In this manner, by extracting a current from the fourth bipolar transistor, a current having a characteristic twice as large as the difference between the first temperature characteristic and the second temperature characteristic can be extracted. By flowing the current into the other end of the fifth resistor connected to the output terminal of the second fixed voltage generation circuit, a voltage that changes in accordance with the temperature and has little noise is generated based on the second fixed voltage. be able to.

As described above, two kinds of resistors having different temperature characteristics but substantially equal resistance values can be provided on the semiconductor integrated circuit. It is possible to generate a voltage that changes according to the temperature and has low noise.

According to a tenth aspect of the present invention, in the temperature sensor of the ninth aspect, each of the first and second switch elements is a Zener diode.

According to this structure, the Zener diode can be made conductive by applying a voltage or flowing a current between the anode and the cathode of the Zener diode, and the application of the voltage or the supply of the current to the Zener diode is interrupted. By simply changing the connection state of the plurality of resistors, it is possible to easily adjust the combined resistance value of the plurality of resistors.

In the temperature sensor device according to the eleventh aspect, in the temperature sensor device according to the ninth aspect, the first switch element is a first conductivity type MOS transistor, and the second switch element is a second conductivity type MOS transistor. It is.

According to this configuration, the MOS transistor can be made conductive by applying the gate voltage of the MOS transistor, and the connection state of the plurality of resistors can be easily established only by interrupting the application of the gate voltage to the MOS transistor. Can be adjusted to adjust the combined resistance value of the plurality of resistors.

According to a twelfth aspect of the present invention, in the temperature sensor of the ninth, tenth or eleventh aspect,
A first fixed voltage generation circuit includes a fifth bipolar transistor of a first conductivity type having an emitter connected to a power supply voltage terminal, a base and a collector commonly connected, an emitter connected to the power supply voltage terminal, and a base connected to the power supply voltage terminal. A sixth bipolar transistor of the first conductivity type connected to the base of the fifth bipolar transistor; a seventh bipolar transistor of the second conductivity type having a collector connected to the collector of the fifth bipolar transistor; The collector is connected to the collector of the bipolar transistor of
The base of the bipolar transistor is connected to the base, the base and the collector are connected in common, the eighth bipolar transistor of the second conductivity type, and the sixth connected between the emitters of the seventh and eighth bipolar transistors A resistor, a ninth bipolar transistor of the second conductivity type having a collector and a base connected to the emitter of the eighth bipolar transistor, and a seventh connected between the emitter of the ninth bipolar transistor and the ground terminal. And a fixed voltage output terminal connected to the emitter of the eighth bipolar transistor.

According to this configuration, by connecting the seventh resistor and the ninth bipolar transistor to each other and connecting the seventh resistor to the emitter of the eighth transistor, the seventh resistor for outputting a stable voltage against a temperature change can be obtained. A relatively small resistance value can be adopted as the resistor 7. Since noise is proportional to the square root of the resistance involved, noise generated at the fixed voltage output terminal can be suppressed.

[0037]

DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment: Claim 1,
Hereinafter, the first embodiment of the present invention will be described.
This will be described with reference to the drawings. FIG. 1 is a circuit diagram showing a temperature sensor device according to a first embodiment of the temperature sensor device of the present invention. In FIG. 1, 1 is a main body circuit of the temperature sensor device, 2 is a first fixed voltage generating circuit for generating a first fixed voltage, and 3 is a resistance value adjusting circuit. 1
4 is a third resistor, 29 is a second resistor for generating a second fixed voltage.
Is a fixed voltage generating circuit.

Hereinafter, the configurations of the main body circuit 1, the first fixed voltage generating circuit 2 and the resistance value adjusting circuit 3 of the temperature sensor device will be specifically described.

The fixed voltage generating circuit 2 generates a first fixed voltage which is substantially constant irrespective of a temperature change, and its output voltage is
The signal is input to the non-inverting input terminal of the operational amplifier 4. Since the buffer circuit is formed by the operational amplifier 4 and the NPN transistor 7, the output voltage of the fixed voltage generation circuit 2 is NPN
Output to the emitter of transistor 7. A first terminal connected between the emitter of the NPN transistor 7 and the ground terminal
The current converted by the first resistor 10 having the following temperature characteristic flows from the collector to the emitter of the NPN transistor 7. Therefore, the first fixed voltage is input to the operational amplifier 4, the NPN transistor 7, and the first resistor 10 and the first fixed voltage is applied to the first resistor 10 having the first temperature characteristic.
Thus, a first voltage-current conversion circuit that converts the current into a first current and outputs the first current is configured.

Further, the PNP transistor 6 and the PNP transistor whose emitters receive the power supply voltage Vcc from the power supply voltage terminal 106 are applied.
A current mirror circuit is configured by the NP transistor 8, and the same current as the collector current of the NPN transistor 7 is discharged from the collector of the PNP transistor 8.

The output voltage of the first fixed voltage generator 2 is also input to the non-inverting input terminal of the operational amplifier 5.
Since the operational amplifier 5 and the NPN transistor 9 form a buffer circuit, the output voltage of the first fixed voltage generation circuit 2 is output to the emitter of the NPN transistor 9. The current converted by the second resistor 11 having the second temperature characteristic connected between the emitter of the NPN transistor 9 and the ground terminal flows from the collector of the NPN transistor 9 to the emitter. Therefore, the first fixed voltage is input by the operational amplifier 5, the NPN transistor 9, and the second resistor 11, and the first fixed voltage is converted into the second current by the second resistor 11 having the second temperature characteristic. Output the second
Is formed.

In this configuration, the first resistor 10 and the resistor 11 have different temperature characteristics of a first temperature characteristic and a second temperature characteristic. The collectors of the PNP transistor 8 and the NPN transistor 9 are commonly connected, so that a current having a difference between the first temperature characteristic and the second temperature characteristic can be extracted from the temperature detection voltage output terminal 105. Specifically, the resistance value of the first resistor 10 having the first temperature characteristic is constant irrespective of a temperature change, and the resistance value of the second resistor 11 having the second temperature characteristic increases as the temperature increases. When increasing, the difference current obtained by subtracting the current of the first temperature characteristic from the current of the second temperature characteristic increases as the temperature increases,
Further, by applying the difference current to the third resistor 14 having the first temperature characteristic, a voltage that increases with an increase in temperature can be extracted from the temperature detection voltage output terminal 105.

Next, the resistance value adjusting circuit 3 will be described. When the first and third resistors 10 and 14 having the first temperature characteristic and the second resistor 11 having the second temperature characteristic are formed on the semiconductor integrated circuit by diffusion, the first resistor having the first temperature characteristic is formed. The manufacturing methods of the third resistors 10 and 14 and the second resistor 11 having the second temperature characteristic are usually different, and the values of both resistors may be different even with the same mask pattern.

Therefore, in addition to the second resistor 11 having the second temperature characteristic, resistors 12 and 13 having the second temperature characteristic are prepared for adjusting the resistance value.
2 and 13, at least in part, in this example, the resistors 12 and 13 for adjusting the resistance value are Zener diodes 15 and 13.
16 are connected in parallel. In the claims, the resistors 11, 12, and 13 are collectively referred to as a second resistor.

The electrode 17 is connected to one end of the first resistor 10.
And an electrode 18 is provided at a common connection portion (one end) of the resistors 11, 12 and 13, and electrodes 19 and 2 are provided at the other ends of the resistors 12 and 13.
0 is provided individually. The resistance value between the electrode 17 and the ground terminal, the resistance value between the electrodes 18 and 19, and the resistance value between the electrodes 18 and 20 can be measured by an externally connected measuring device.

The Zener diode 1 is connected to the resistors 12 and 13.
5, 16 are connected, and in the initial state, each resistor 12,
The path between 13 and the ground terminal is shut off. By making the Zener diode 15 or 16 conductive, the resistance 11
When it is necessary to approximately match the resistance value of the resistor 10 by connecting the resistor 12 or the resistor 13 in parallel with the resistance value of the resistor 10, a voltage or a current is applied between the electrode 19 or 20 and the ground terminal. Zener diode 1
5 or 16 is provided with a short-circuit path. In this manner, two types of resistors having different temperature characteristics but substantially equal resistance values can be provided on the semiconductor integrated circuit.

One end of the output current of the first and second voltage-current conversion circuits is connected at one end to a second fixed voltage generation circuit 29 for generating a constant second fixed voltage regardless of a temperature change. The voltage is applied to the other end of the third resistor 14 as a load resistor to generate a voltage. The resistance values of the first resistor 10 and the third resistor 14 are constant irrespective of temperature changes, and the resistance values of the second resistors 11, 12, and 13 rise (fall) in temperature.
When the voltage rises (falls) (has a positive temperature coefficient) in response to the temperature rise, the voltage generated across the third resistor 14 rises (falls) in response to the temperature rise (fall). Hereinafter, this will be described in more detail using equations.

The resistance value of the first resistor 10 is R1, the resistance value of the resistance value R1 at the reference temperature Ta is R01, the primary temperature coefficient is α1, the secondary temperature coefficient is β1, and the second resistance coefficient is R1. The combined resistance of the resistors 11, 12, and 13 is R2,
The resistance value of the resistance value R2 at the reference temperature Ta is R02, the primary temperature coefficient is α2, the secondary temperature coefficient is β2, the voltage applied to both ends of each of the resistors 10 to 13 is Vref,
The collector current of the NPN transistor 7 is I1,
Assuming that the collector current of the PN transistor 9 is I2, Vref = I1 × R01 × {1 + α1 (T−Ta) + β1 (T−Ta) ² } = I2 × R02 × Δ1 + α2 (T−Ta) + β2 (T− Ta) ² ｝.

Assuming that the resistance values of R01 and R02 are equal to R0, the collector current I1 and the collector current I2
I1-I2, which is the difference between the two, is obtained as follows: I1-I2 = ｛(α2-α1) (T-Ta) × (β2-
β1) (T−Ta) ² ｝ × (Vref / R0) Here, when α1 and β1 are sufficiently small values with respect to α2 and β2, I1−I2 becomes I1−I2 ≒ ｛α2 (T−Ta) + β2 (T−T
a) It is given by ² ｝ × (Vref / R0).

Further, when β2 is a value sufficiently smaller than α2, it is given by I1−I2 ≒ α2 (T−Ta) (Vref / R0).

Next, the resistance of the third resistor 14 is R3, and the resistance of the resistance R3 at the reference temperature Ta is R03.
When the primary temperature coefficient is α1 and the secondary temperature coefficient is β1,
The voltage Vout across the third resistor 14 is as follows: Vout = (R03 / R0) × α2 × (T−Ta) × V
ref. Thus, a voltage proportional to the absolute temperature T can be obtained.

As a resistor having such a temperature coefficient, for example, the primary temperature coefficient of the resistance value R1 is 400 ppm / K,
The secondary temperature coefficient is 7 ppm / K ² , the primary temperature coefficient of the resistance value R2 is 5000 ppm / K, and the secondary temperature coefficient is 10
A resistance of ppm / K ² is used. Regarding the variation, the resistance value R1 can be formed to be about ± 7%, and the resistance value R2 can be formed to be about ± 23%. In the present invention, adjustment is performed using a switch element so as to absorb this variation and make the resistance value R1 and the resistance value R2 substantially equal.

In the case of FIG. 1, the Zener diode 1
Selection of 5 and 16 is 2 bits, but usually consists of 4 bits or more. Here, the resistance value of the first resistor 10 is
By setting the initial value to an intermediate value between the resistance value of the second resistor 11, 12, 13 in parallel connection and the resistance value of the resistor 11 alone, the resistance value R1 and the resistance value R2 become substantially equal. Can be adjusted.

A first flowchart of a procedure for adjusting the first resistor 10 and the second resistors 11 to 13 in FIG. 1 is shown below. In order to make the combined resistance value of the second resistors 11 to 13 and the value of the first resistor 10 close to the closest value, adjustment is performed in the following procedure.

1. The resistance between the electrode 17 and the ground terminal is measured, and the resistance of the first resistor 10 is determined.

2. The electrodes 19 and 20 are grounded or released according to the combination corresponding to the number of electrodes.

3. The combination closest to the resistance value of the first resistor 10 is selected from the resistance measurement results of this combination.

4. The path of the Zener diode 15 or 16 is short-circuited corresponding to this combination.

A second flowchart of the procedure for adjusting the first resistor 10 and the second resistors 11 to 13 in FIG. 1 is shown below. In this adjustment method, the second resistors 11 to 1
In order to make the combined resistance value of No. 3 and the resistance value of the first resistor 10 close to the closest value, adjustment is performed in the following procedure.

1. The value of the current I15 is measured.

[0061] 2. The electrodes 19 and 20 are grounded or released according to the combination corresponding to the number of electrodes.

3. In the measurement of this combination, the current I1
The case of the combination whose value of 5 is closest to zero is selected.

4. The path of the Zener diode 15 or 16 is short-circuited corresponding to this combination.

According to the temperature sensor device of this embodiment, the first fixed voltage, which is substantially constant regardless of the temperature change,
The first resistor 10 having a first temperature characteristic is used to convert the current into a first current and a second current having a second temperature characteristic.
Is converted into a second current by using the resistor 11 of FIG. 1, and the difference current between the first and second currents is converted into a voltage by the third resistor 14 having a substantially constant resistance value regardless of the temperature change. Can be generated by removing noise from the fixed voltage generation circuit 2 including noise. As a result, low current consumption can be easily achieved.

Further, by selectively turning on and off the Zener diodes 15 and 16 which are switch elements,
First resistor 10 and second resistor 11, 1 having different temperature characteristics
The resistance values of the combined resistors 2 and 13 can be adjusted to be substantially the same, and a voltage that changes according to a temperature change can be generated with high accuracy.

In the above embodiment, the switching element using the Zener diodes 15 and 16 has been described. However, it goes without saying that a MOS transistor may be used. In the above embodiment, the second
The first resistor 10 is provided with a resistance adjusting circuit 3 so that the resistance of the first resistor 1 can be adjusted.
Naturally, the resistance value of 0 may be adjusted. Further, a resistance adjustment circuit may be provided for both the first and second resistors.

(Second Embodiment: Corresponding to Claims 5 and 6) FIG. 2 is a circuit diagram showing a temperature sensor device according to a second embodiment of the present invention. In this temperature sensor device,
Reference numeral 30 denotes a main body circuit of the temperature sensor device, and reference numeral 31 denotes a first fixed voltage generation circuit related to the temperature sensor device. 3
2 is a resistance value adjustment circuit. Hereinafter, the configurations of the main body circuit unit 30, the first fixed voltage generation circuit 31, and the resistance value adjustment circuit 32 of the temperature sensor device will be specifically described.

The first fixed voltage generating circuit 31 generates a substantially constant first fixed voltage regardless of a temperature change. First
The output voltage of the fixed voltage generation circuit 31 is
0 is input to the non-inverting input terminal. Since the buffer circuit is formed by the operational amplifier 100 and the NPN transistor 36, the output voltage of the first fixed voltage generation circuit 31 is N
It is output to the emitter of the PN transistor 36. This N
The current converted by the resistor 39 connected between the emitter of the PN transistor 36 and the ground terminal flows from the collector to the emitter. Therefore, the operational amplifier 100 and NP
The N-transistor 36 and the resistor 39 form a voltage-current conversion circuit which receives a first fixed voltage as an input, converts the first fixed voltage into a current by the first resistor 39 having a first temperature characteristic, and outputs the current. Will be.

The current proportional to the output current of the voltage-current conversion circuit is discharged from the collectors of the PNP transistors 34 and 35. The collector current of the PNP transistor 34 flows into the NPN transistor 37, which is the third transistor, and the first resistor 40, and is converted into a voltage. This voltage is input to the base of an NPN transistor 38 as a fourth transistor. A second resistor 41 is connected to the emitter of the NPN transistor 38,
Convert current.

In this configuration, the resistor 39, the first resistor 40, and the second resistor 41 are connected to the first temperature characteristic and the second
If the first temperature characteristic has a constant resistance value regardless of a temperature change, the current becomes the second temperature characteristic, and the PNP transistor 35
Given to the collector. PNP transistor 35 and N
The collectors of the PN transistors 38 are commonly connected, so that a current having a difference between the first temperature characteristic and the second temperature characteristic can be extracted. Specifically, the resistance value of the resistor having the first temperature characteristic is constant irrespective of the temperature, and the resistance value of the resistor having the second temperature characteristic increases as the temperature rises (the positive resistance temperature coefficient is Has), the difference current obtained by subtracting the current of the second temperature characteristic from the current of the first temperature characteristic increases with an increase in temperature, and the difference current is further increased by the third resistor 42 having the first temperature characteristic. , It is possible to take out a voltage that rises as the temperature rises from the temperature detection voltage output terminal 103. Reference numeral 102 denotes a second fixed voltage generating circuit for applying a substantially constant second fixed voltage to the third resistor 42 regardless of a temperature change, and 107 denotes a power supply voltage Vcc for the PNP transistor 3.
Power supply voltage terminals applied to the emitters 3 to 35.

The resistance value adjusting circuit 32 includes resistors 43 and 44 having a second temperature characteristic and a zener diode 4.
5, 46 and electrodes 47, 48, and 49, and the operation is the same as that of the resistance adjustment circuit 3.

The output current of the main circuit 30 is supplied to a third resistor 42, which is a load resistor, to generate a voltage. When the resistance values of the resistors 39, 40, and 42 are constant with respect to temperature, and when the values of the resistors 41, 43, and 44 rise with respect to temperature, the voltage generated across the resistor 42 is relative to temperature. To rise. Hereinafter, this will be described in more detail using equations.

The output of the first fixed voltage generating circuit 31 is Vr
ef, the resistance value of the resistor 39 is R6, and the resistance value R6
If the resistance value at the reference temperature Ta is R06, the primary temperature coefficient is α4, the secondary temperature coefficient is β4, and the collector current of the NPN transistor 37 is I4, I4 is N
Since it is equal to the collector current of the PN transistor 36, I4 = Vref / (R06 × ｛1 + α4 (T−Ta) +
β4 (T−Ta) ² ｝). When α4 and β4 are sufficiently small values, I4 ≒ Vref / R06.

The resistance value of the resistor 40 is R4, and the resistance value R
4, the resistance value at the reference temperature Ta is R04, the primary temperature coefficient is α4, and the secondary temperature coefficient is β4.
The resistance value of the combined resistors of Rs.
The resistance value at the reference temperature Ta is R05, the primary temperature coefficient is α5, the secondary temperature coefficient is β5, and the base-emitter voltage of the NPN transistor 37 is Vbe37, NPN
When the base-emitter voltage of the transistor 38 is Vbe3
8, assuming that the collector current of the NPN transistor 37 is I4 and the collector current of the NPN transistor 38 is I5, I4 × R04 × ｛1 + α4 (T−Ta) + β4 (T−T
a) ² ｝ + Vbe37 = I5 × R05 × ｛1 + α5 (T
−Ta) + β5 (T−Ta) ² ｝ + Vbe38.

Here, when the resistance values R04 and R05 are equal, α4 and β4 are sufficiently smaller than α5 and β5, and the base-emitter voltage Vbe37 is substantially equal to the base-emitter voltage Vbe38. Current I5
Is I5 ≒ I4 / ｛1 + α5 (T-Ta) + β5 (TT
a) Given by ² ｝.

Further, when β5 is a value sufficiently smaller than α5, a PNP transistor is given by I5ＩI4 / {1+ (α5 (T−Ta)} {I4 ≒ 1−α5 (T−Ta)}. Since the collector current of 35 is equal to the collector current of NPN transistor 36, it becomes I4 and the current I4- flowing into the third resistor 42 is obtained.
I5 is given by I4−I5 = Vref / R06 × α5 (T−Ta).

Next, assuming that the value of the third resistor 42 is R7, the resistance value of the resistance value R7 at the reference temperature Ta is R07, the primary temperature coefficient is α4, and the secondary temperature coefficient is β4. , The voltage Vout across the third resistor 42 is: Vout = (R07 / R06) × α2 × (T−Ta) ×
Vref. Thus, a voltage proportional to the temperature can be obtained.

As the resistance having such a temperature coefficient, the primary temperature coefficient of the resistance value R4 is 400 ppm / K, the secondary temperature coefficient is 7 ppm / K ² , the primary temperature coefficient of the resistance value R5 is 5000 ppm / K, The next temperature coefficient is 10 ppm / K
A resistance of ² is used. Regarding the variation, the resistance value R4 can be formed to be about ± 7%, and the resistance value R5 can be formed to be about ± 23%. In the present invention, adjustment is performed using a switch element so as to absorb the variation and make the resistance value R4 and the resistance value R5 substantially equal.

In the case of FIG. 2, the Zener diode 4
The selection of 5, 46 is 2 bits, but usually consists of 4 bits or more. Here, the value of the first resistor 40 is
By setting an initial value to an intermediate value between the resistance value of the resistors 41, 43, and 44 connected in parallel and the resistance value of the second resistor 41 alone, the resistance values R4 and R5 become substantially equal. Can be adjusted.

In FIG. 2, the resistor 40 and the resistors 41, 43,
The first adjustment method of 44 is shown below. A second resistor 41,
In order to make the combined resistance value of 43 and 44 and the resistance value of the first resistor 40 close to the closest value, adjustment is performed in the following procedure.

1. The resistance value between the electrode 50 and the ground terminal is measured, and the value of the first resistor 40 is obtained.

2. The electrodes 48 and 49 are grounded or released according to the combination corresponding to the number of electrodes.

3. The combination closest to the resistance value of the first resistor 40 is selected from the resistance measurement results of this combination.

4. The path of the Zener diode 45 or 46 is short-circuited corresponding to this combination.

In FIG. 2, the resistors 40 and 41, 43,
The second adjustment method of 44 is shown below. In this adjustment method, the combined resistance value of the resistors 41, 43, and 44 and the resistor 40
In order to make the resistance value of approach the closest value, adjustment is performed in the following procedure.

1. The value of the current 20 is measured.

2. The electrodes 48 and 49 are grounded or released corresponding to a combination corresponding to the number of electrodes.

3. In the measurement of this combination, the current I2
The case of the combination whose value of 0 is closest to zero is selected.

4. The path of the Zener diode 45 or 46 is short-circuited corresponding to this combination.

According to the temperature sensor device of this embodiment, the first fixed voltage, which is substantially constant regardless of the temperature change, is applied to the operational amplifier 100, the NPN transistor 36 and the resistor 3
9, a current proportional to the output current of the voltage-current conversion circuit flows through the PNP transistors 34 and 35, and the current flowing through the PNP transistor 34 and the NPN transistor 37 and the first The voltage is converted into a voltage by the first resistor 40 having the temperature characteristic, and the voltage is converted into a current by the NPN transistor 38 and the second resistor 41 having the second temperature characteristic. The difference between the currents flowing through the transistor 38 is calculated, and the difference current is converted into a voltage using the third resistor 42 having a substantially constant resistance value regardless of the temperature change. Noise can be generated by removing noise from the fixed voltage generation circuit 31 containing noise. As a result, low current consumption can be easily achieved.

Further, by selectively turning on and off the Zener diodes 45 and 46 as the switch elements,
First resistor 40 and second resistors 41 and 4 having different temperature characteristics
The resistance values of the combined resistors 3 and 44 can be adjusted to be substantially the same, and a voltage that changes according to a temperature change can be accurately generated.

In the above embodiment, the resistance value of the second resistor is configured to be adjustable.
It is a matter of course that the resistance value adjusting circuit 32 may be provided on the first side so that the resistance value of the first resistor 40 can be adjusted. Further, a resistance adjustment circuit may be provided for both the first and second resistors.

(Third Embodiment: Corresponding to Claims 9 and 10) FIG. 3 is a circuit diagram showing a temperature sensor device according to a third embodiment of the present invention. In this temperature sensor device,
Reference numeral 51 denotes a main body circuit of the temperature sensor device, and reference numeral 52 denotes a first fixed voltage generation circuit related to the temperature sensor device. 5
Reference numeral 3 denotes a first resistance value adjustment circuit, and reference numeral 54 denotes a second resistance value adjustment circuit. Hereinafter, the main body circuit section 51, the first fixed voltage generation circuit 52, the first and second resistance value adjustment circuits 53, 54
The configuration will be specifically described.

The first fixed voltage generation circuit 52 generates a substantially constant fixed voltage regardless of a temperature change.

Next, the main body circuit 51 of the temperature sensor device
Will be described. The output voltage of the first fixed voltage generation circuit 52 is input to the non-inverting input terminal of the operational amplifier 56. Since the operational amplifier 56 and the NPN transistor 60 form a buffer circuit, the output voltage of the first fixed voltage generation circuit 52 is output to the emitter of the NPN transistor 60. The current converted by the resistor 68 connected between the emitter of the NPN transistor 60 and the ground terminal flows from the collector of the NPN transistor 60 to the emitter. Therefore, the first fixed voltage is input to the operational amplifier 56, the NPN transistor 60, and the resistor 68, and the first fixed voltage is changed to the first resistor 68 having the first temperature characteristic.
Thus, a voltage-current conversion circuit that converts the current into a current and outputs the current is configured.

A current proportional to the output current of the voltage-current conversion circuit is discharged from the collectors of the PNP transistors 58 and 59. The collector current of the PNP transistor 58 flows into an NPN transistor 61 as a third transistor and a first resistor 69, and is converted into a voltage. This voltage is input to the base of an NPN transistor 62 that is the fourth transistor. A second resistor 70 is connected to the emitter of the NPN transistor 62,
Convert current.

In this configuration, the first resistor 69 and the second resistor 70 have different temperature characteristics of a first temperature characteristic and a second temperature characteristic, and the first temperature characteristic is constant with respect to a temperature change. In the case of, the current having the second temperature characteristic is N
It flows to the PN transistor 62 and is given to the collector of the NPN transistor 62. In addition, the third resistor 64 and the fourth resistor 65 have different temperature characteristics of a second temperature characteristic and a first temperature characteristic. The collector current of PNP transistor 57 is converted to a voltage by resistor 63. This voltage is converted into a current by the resistor 65, and P
It becomes the collector current of the NP transistor 59. The collectors of the PNP transistor 59 and the NPN transistor 62 are commonly connected, so that a current having twice the difference between the first temperature characteristic and the second temperature characteristic can be extracted.

Specifically, when the value of the resistance of the first temperature characteristic is constant with respect to temperature and the value of the resistance of the second temperature characteristic increases with increasing temperature, The difference current obtained by subtracting the current of the second temperature characteristic from the current increases as the temperature rises, and this difference current has twice the sensitivity as compared with the temperature sensor device of the fifth aspect. By applying the difference current to the resistor 55 having the first temperature characteristic, a voltage that increases with an increase in temperature can be detected by the temperature detection voltage output terminal 104
Can be taken from Reference numeral 101 denotes a third resistor 53 which generates a substantially constant second fixed voltage regardless of a temperature change.
Is a second fixed voltage generating circuit to be added to.

The resistance adjusting circuit 53 comprises resistors 71 and 72, Zener diodes 75 and 76, and electrodes 80 to 82. The operation thereof is the same as that described for the resistance adjusting circuit 3, Become part of resistance. The resistance adjusting circuit 54 includes resistors 66 and 67 and a Zener diode 7.
3, 74 and electrodes 77 to 79, 83, and operate in the same manner as the resistance adjusting circuit 3. That is, when the resistance having the first temperature characteristic and the resistance having the second temperature characteristic are diffused and formed on the semiconductor integrated circuit, the manufacturing methods of the resistance having the first temperature characteristic and the resistance having the second temperature characteristic are usually different and are the same. In some cases, the values of the two resistors may be different even with the mask pattern described above. Therefore, in addition to the fourth resistor, fourth resistors 66 and 67 having a first temperature characteristic are prepared, and these resistors 65, 66, and 6 are prepared.
7, the resistors 66 and 67 in this example are connected in parallel via a zener diode, and an electrode 83 is connected to one end of the resistor 65, and an electrode 77 and a resistor 66 are connected to a common connection between the resistors 65, 66 and 67. , 67 at the other end of the electrode 78,
79 individually. The resistance value between the electrode 83 and the electrode 77, between the electrode 78 and the electrode 77, and between the electrode 79 and the electrode 77 can be measured by a measuring device connected to the outside. Zener diode 73,
74 are connected, and in the initial state, the resistors 66 and 67 are connected.
The path between and the electrode 83 is blocked.

When the Zener diode 73 or 74 is turned on, the resistance 65 or the resistance 6
7 are connected in parallel, the value of the resistor
When it is necessary to substantially match the value of the above, a voltage is applied or a current is supplied between the electrode 78 or the electrode 79 and the electrode 83 to provide a short-circuit path in the Zener diode 73 or 74. In this manner, two types of resistors having different temperature characteristics but substantially equal resistance values can be provided on the semiconductor integrated circuit.

Next, the main body circuit 51 of the temperature sensor device will be described.
Is applied to the fifth resistor 55, which is a load resistor, to generate a voltage. The resistance values of the resistances 68, 69, 55, and 65 to 67 are constant regardless of the temperature change, and the values of the resistances 70 to 72, the resistance 63, and the resistance 64 increase as the temperature increases (positive). With a temperature coefficient of resistance of
At this time, the voltage generated across the resistor 55 rises (falls) with respect to the rise (fall) of the temperature. Hereinafter, this will be described in more detail using equations.

The output of the first fixed voltage generation circuit 52 is Vr
ef, the resistance value of the resistor 68 is R8, and the resistance value R8
If the resistance at the reference temperature Ta is R08, the primary temperature coefficient is α4, the secondary temperature coefficient is β4, and the collector current of the PNP transistor 58 is I8, the collector current I8 is the collector of the PNP transistor 57. I8 = Vref / [R08 × ｛1 + α4 (T−Ta) +
β4 (T−Ta) ² }]. When α4 and β4 are sufficiently small values, I8 ≒ Vref / R08. Further, the resistance value of the resistor 69 is R9, the resistance value of the resistance value R9 at the reference temperature Ta is R09, the primary temperature coefficient is α4, the secondary temperature coefficient is β4, and the resistors 70 to 72.
Has a resistance value of R10, a resistance value of the resistance value R5 at the reference temperature Ta is R010, and a primary temperature coefficient is α.
5, the secondary temperature coefficient is β5, the base-emitter voltage of the NPN transistor 61 is Vbe61, and the base-emitter voltage of the NPN transistor 62 is Vbe6.
2. Assuming that the collector current of the NPN transistor 61 is I8 and the collector current of the NPN transistor 62 is I9, I8 × R09 × ｛1 + α4 (T−Ta) + β4 (T−T
a) ² ｝ + Vbe61 = I9 × R010 × ｛1 + α5
(T−Ta) + β5 (T−Ta) ² ｝ + Vbe62.

Here, the resistance values R09 and R010 are equal, α4 and β4 are sufficiently smaller than α5 and β5, and the base-emitter voltage Vbe61 and the base
When the emitter-to-emitter voltages Vbe62 are substantially equal, the current I9
Is I9 ≒ I8 / ｛1 + α5 (T-Ta) + β5 (TT
a) Given by ² ｝.

Further, when β5 is a value sufficiently smaller than α5, it is given by I9ＩI8 / {1+ (α5 (T−Ta)} {I8 ｛1−α5 (T−Ta)}.

Next, the collector current of PNP transistor 59 will be considered. The resistance value of the resistor 63 is R11, and the resistance value of the resistance value R11 at the reference temperature Ta is R01.
1, the primary temperature coefficient is α5, the secondary temperature coefficient is β5, the combined resistance of the resistors 65 to 67 is R12, and the resistance value of the resistance value R12 at the reference temperature Ta is R01.
2. The primary temperature coefficient is α4, the secondary temperature coefficient is β4, the base-emitter voltage of the PNP transistor 57 is Vbe57, the base-emitter voltage of the PNP transistor 59 is Vbe59, and the collector current of the PNP transistor 57 is If it is I8 and the collector current of the PNP transistor 59 is I10, I8 × R011 × ｛1 + α5 (T−Ta) + β5 (T−
Ta) ² ｝ + Vbe 57 = I10 × R012 × ｛1 + α
4 (T−Ta) + β4 (T−Ta) ² ｝ + Vbe59.

Here, the resistance value R011 and the resistance value R012
And α4 and β4 are sufficiently smaller than α5 and β5, and the base-emitter voltage Vbe57 is substantially equal to the base-emitter voltage Vbe59, the current I
10 is I10 ≒ I8 × ｛1 + α5 (T-Ta) + β5 (TT
a) Given by ² ｝.

Further, when β5 is a sufficiently small value with respect to α5, it is given by I9 {I8 × {1+ (α5 (T−Ta)}}.

Currents I9-I8 flowing into third resistor 55
I9−I8 = 2 × Vref / R08 × α5 (T−Ta)

Next, the resistance value of the third resistor 55 is R13
And the resistance value of the resistance value R13 at the reference temperature Ta is R0.
13. If the primary temperature coefficient is α4 and the secondary temperature coefficient is β4, the voltage Vout across the resistor 55 is: Vout = 2 × (R013 / R08) × α5 × (TT
a) It is given by × Vref. In this way, a voltage proportional to the temperature can be taken out, and the voltage Vout can obtain twice the sensitivity to a temperature change as compared with the temperature sensor device according to the fifth aspect.

The resistance 69 and the resistances 70 to 72 in FIG.
The method of adjusting the resistance 63 and the resistances 65 to 67 will be described below. The combined resistance value of the resistors 70 to 72, the resistor 69, and the resistors 65 to 67
In order to make the combined resistance value and the value of the resistor 63 close to the closest value, the adjustment is performed in the following procedure.

[0111] 1. The value of the current I21 is measured.

[0112] 2. The electrodes 81 and 82 are grounded or released according to the combination according to the number of electrodes, and the electrodes 78 and 7 are
9 is short-circuited or released with the electrode 83 corresponding to the combination corresponding to the number of electrodes.

3. In the measurement of this combination, the current I2
The combination whose value of 1 is closest to zero is selected.

4. The path of the Zener diode 78 or 79 or 81 or 82 is short-circuited corresponding to this combination.

FIG. 4 is a diagram showing the first embodiment shown in FIGS. 1, 2 and 3.
FIG. 9 is a circuit diagram showing a configuration of a fixed voltage generating circuit of FIG. 7 and first fixed voltage generating circuits shown in FIGS. 7 and 8 described later. The first fixed voltage generating circuit is a band gap type voltage generating circuit, and has an NPN base connected in common.
PNPs whose bases are commonly connected to the transistors 86 and 87 (third and fourth of claim 4 or seventh and eighth bipolar transistors of claims 8 and 12)
Transistors (first and second bipolar transistors or fifth and sixth bipolar transistors according to claims 8 and 12) 84 and 85, and an NPN transistor 86
Is connected to the collector and base of PNP transistor 84, and the collector of PNP transistor 85 is connected to the collector and base of NPN transistor 87.

Here, the NPN transistor 86 and NPN
A resistor is connected between the emitters of the transistor 87 (claims 4 and 8).
The collector of the NPN transistor 88 and the base are connected to the emitter of the NPN transistor 87, and one end of the resistor 90 is connected to the emitter of the NPN transistor 88. Is connected, and the other end of the resistor 90 is connected to the ground terminal. The emitter of the NPN transistor 86 has a size n times (n is an arbitrary positive value), for example, five times as large as that of a standard transistor. In this configuration, the NPN
A constant voltage with respect to temperature can be output to the emitter of the transistor 88. At this time, for each constant constituting the circuit, the resistance value of the resistor 90 is set to R2,
Assuming that the current flowing through 0 is I2, the absolute temperature is T, the ratio of the voltage between the base and the emitter of the transistor to the absolute temperature T is 1.8 mV / K, and the natural logarithm is ln, R2 × I2 = 1.8 × T ( mV), and the relationship of R2 / R1 = 1.8 / (2k / q × lnN) is satisfied.

The current supplied from the power supply voltage terminal 91 is represented by I
If cc, the current I2 and the current Icc have the same value, so that R2 × Icc = 1.8 × T (mV).

Here, when the noise voltage Vnr1 generated at the output terminal 92 is obtained with B as the semiconductor bandwidth, Vnr1 = (4 kT × R2 × B) ^(1/2) .

FIG. 5 is a circuit diagram showing a configuration of a conventional fixed voltage generating circuit. PNP transistors 93 and 94 and N
It is composed of PN transistors 95 and 96 and resistors 97 and 98. The size of the NPN transistor 95 is n times, for example, five times as large as other transistors.

Here, assuming that the value of the resistor 97 of the conventional example of the first fixed voltage generating circuit of FIG. 5 is R3 and the resistor 98 is equal to the resistor 89 of FIG. 4, the noise voltage Vnr2 generated at the output terminal is Since Vnr2 = (4kT × R3 × B) ^(1/2) , and R3 is twice the value of R2, the noise voltage Vnr1 is reduced to (1/2) ^(1/2) of the noise voltage Vnr2. Is done. In this way, the noise voltage of the output voltage of the fixed voltage generating circuit of the embodiment of FIG. 4 is a value reduced by 3 dB from the noise voltage of the output voltage in the case of the conventional example of FIG.

Here, the reason why the resistance value R3 is twice the resistance value R2 will be described. Normally, the PNP transistors 93 and 94 have the same size, and the collector current I93 of the PNP transistor 93 and the PNP transistor 9
4 have the same collector current I3. That is, I3 = I93 = (kT / q · lnN) / R98 holds. Here, R98 is the resistance value of the resistor 98.

Similarly, in the case of FIG. 4, the currents I84 and I85 flowing through the collectors of the PNP transistors 84 and 85 are:
When the resistance value of the resistor 89 is R89, I84 = I85 = (kT / q · lnN) / R89. Therefore, the current I90 flowing through the resistor 90 is I90 = I84 + I85 = 2I3. Since the voltages Vref and Vout2 are equal, R3 = 2 · R2.

FIG. 6 is a characteristic diagram showing the effect of noise reduction in the temperature sensor device according to the embodiment of the present invention. 10A shows the voltage noise of the output terminal 5 of FIG. 10 of the related art, and FIG. 10B shows the voltage noise of the output of the temperature sensor device according to claim 12. The results of (A) and (B) show the results when noise simulation was performed using the same model parameters. In (B) of the present invention, the frequency is improved by about 4 dB when the frequency is 1 Hz and by about 5 dB when the frequency is 1 kHz.

According to the temperature sensor device of this embodiment, the first fixed voltage, which is substantially constant irrespective of temperature changes, is converted into a current by the voltage-current conversion circuit, and is proportional to the output current of the voltage-current conversion circuit. The generated current is supplied to the PNP transistor 5
8 and 59, the current flowing through the PNP transistor 58 is converted into a voltage by the NPN transistor 61 and the first resistor 69 having the first temperature characteristic, and this voltage is converted to N
The current is converted into a current by the PN transistor 62 and the second resistor 70 having the second temperature characteristic, and a difference between a current flowing through the PNP transistor 59 and a current flowing through the NPN transistor 62 is obtained. Is converted to a voltage using the fifth resistor 55 having a substantially constant resistance value.
A voltage that changes according to a temperature change can be generated by removing noise from the fixed voltage generation circuit 62 that includes noise. As a result, low current consumption can be easily achieved. Further, since the third and fourth resistors 64 (63) and 65 having the second and first temperature characteristics are connected to the emitter sides of the PNP transistors 58 and 59, the change in the resistance value with respect to the temperature is changed to the second. Can be doubled in the case of the embodiment.

Further, by selectively turning on and off the Zener diodes 75, 76, 73 and 74 as the first and second switch elements, the first resistor 69 and the second resistors 70 and 71 having different temperature characteristics are provided. , 72 can be adjusted to be substantially the same, and the combined resistance of the third resistor 64 (63) and the fourth resistors 65, 66, 67 can be adjusted to be substantially the same. In addition, it is possible to accurately generate a voltage that changes according to a temperature change.

Further, by employing the configuration of FIG. 4 as the first fixed voltage generation circuit, noise generated from the first fixed voltage generation circuit itself can be suppressed, and further noise reduction can be achieved. Can be. The effect of adopting the configuration of FIG. 4 is common to all the embodiments using the circuit of FIG.

Other effects are similar to those of the second embodiment.

In the above-described embodiment, the resistance values of the second and fourth resistors are configured to be adjustable.
Needless to say, resistance value adjusting circuits 53 and 54 may be provided for the third and third resistors to adjust the resistance values of the first and third resistors 69 and 64 (63). Further, a resistance adjusting circuit may be provided for all of the first to fourth resistors.

(Fourth Embodiment: Corresponding to Claims 5 and 7) FIG. 7 is a circuit diagram showing a temperature sensor device according to a fourth embodiment of the present invention, which is a substitute for the Zener diode in FIG. As an N-channel MOS transistor 20
0,201 switching characteristics are used. Terminal 2
A predetermined voltage is applied to the N.
By selectively turning on and off the transistors 200 and 201, the combined resistance of the resistor 40 and the resistors 41, 43 and 44 can be made substantially equal. Other configurations are the same as those in FIG.

According to the temperature sensor device of this embodiment, the same effects as in the second embodiment are exhibited.

(Fifth Embodiment: Corresponding to Claims 9 and 11) FIG. 8 is a circuit diagram showing a temperature sensor device according to a fifth embodiment of the present invention, which is a substitute for the Zener diode in FIG. As an N-channel MOS transistor 21
0, 211 and P-channel MOS transistor 21
4,215 switching characteristics are used. Terminal 2
A predetermined voltage is applied to the N-channel MOS transistors 12, 213
By selectively turning on / off the transistors 210 and 211 and applying a predetermined voltage to the terminals 216 and 217 to selectively turn on / off the P-channel MOS transistors 214 and 215, the resistance 69 and the resistance 70 and 7 are increased.
1, 72, each of resistors 63, 64 and resistor 6
The combined resistance of 5, 66, 67 can be made substantially equal. Other configurations are the same as those in FIG.

According to the temperature sensor device of this embodiment, the same effects as in the third embodiment are exhibited.

FIG. 9 shows an embodiment of a fixed voltage generating circuit for generating a fixed voltage applied to the gates of the MOS transistors shown in FIGS. In FIG. 9, 220 to 222 are PNP transistors, 223 and 224 are NPN transistors, 225 is a Zener diode, 226 and 227 are diodes, 228 is a resistor, 229 to 231 are terminals,
32 is an inverter, and 233 is a power supply voltage terminal.

In the above configuration, when a voltage is applied from the terminal 229 to the Zener diode 225, a short-circuit path is formed in the Zener diode 225, and a low-level voltage is output to the terminal 230 and a high-level voltage is output to the terminal 231. When a voltage is not applied from the terminal 229 to the Zener diode 225, a high-level voltage is output to the terminal 230 and a low-level voltage is output to the terminal 231.

In this case, by applying the voltage of the terminal 230 to the terminals 202 and 203 of FIG. 7, the N-channel MOS transistors 200 and 201 of the circuit of FIG. 7 can be selectively turned on and off.

The terminals 212 and 213 shown in FIG.
By applying a voltage of 30 to the voltage of the terminal 231 to the terminals 216 and 217, the N-channel MOS transistor 2
10, 211 and a P-channel MOS transistor 214,
215 can be selectively turned on and off.

[0137]

According to the temperature sensor device of the first aspect of the present invention, the first fixed voltage which is substantially constant irrespective of the temperature change is converted to the first fixed voltage by using the first resistor having the first temperature characteristic. 1
And a second current using a second resistor having a second temperature characteristic.
Is converted into a voltage by a third resistor having a substantially constant resistance value irrespective of a temperature change, so that a voltage that changes according to a temperature change is removed from a fixed voltage generation circuit including the noise by removing the noise. And can be generated. As a result, low current consumption can be easily achieved.

Also, by selectively turning on and off the switch element, it is possible to adjust the resistance values of the first and second resistors having different temperature characteristics to be substantially the same.
A voltage that changes according to a temperature change can be generated with high accuracy.

According to the temperature sensor device of the second aspect of the present invention, since the switching element is a Zener diode, a short circuit path can be formed by applying a voltage or a current to the cathode side, and a short circuit path can be formed. Since the resistance value is small (20 Ω or less), the resistance value can be adjusted with high accuracy, and the current consumption is small as compared with the case where a bipolar transistor is used for the switching element.

According to the temperature sensor device of the third aspect of the present invention, since the switching element is a MOS transistor, the on-resistance value can be reduced by increasing the gate width / gate length, and the accuracy can be reduced. The resistance value can be adjusted well, and the current consumption is smaller than when a bipolar transistor is used for the switching element.

According to the temperature sensor device of the fourth aspect of the present invention, the first fixed voltage generation circuit can be configured to reduce noise, and the noise can be further reduced.

According to the temperature sensor device of the fifth aspect of the present invention, the first fixed voltage, which is substantially constant irrespective of the temperature change, is converted into a current by the voltage-current conversion circuit, and the output of the voltage-current conversion circuit is changed. A current proportional to the current flows through the first and second bipolar transistors, and the current flowing through the first bipolar transistor is converted into a voltage by the third bipolar transistor and a first resistor having a first temperature characteristic. This voltage is converted into a current by a fourth bipolar transistor and a second resistor having a second temperature characteristic, and the difference between the current flowing through the second bipolar transistor and the current flowing through the fourth bipolar transistor is calculated. Since the difference current is converted into a voltage using the third resistor having a substantially constant resistance value regardless of the temperature change, the voltage that changes in accordance with the temperature change is converted into a noise. To remove noise from a fixed voltage generating circuit including, it can be generated. As a result, low current consumption can be easily achieved.

Further, by selectively turning on and off the switch element, it is possible to adjust the resistance values of the first and second resistors having different temperature characteristics to be substantially the same.
A voltage that changes according to a temperature change can be generated with high accuracy.

According to the temperature sensor device of the sixth aspect of the present invention, since the switch element is a Zener diode, not only the same effect as in the fifth aspect but also the effect described in the second aspect can be obtained.

According to the temperature sensor device of the seventh aspect of the present invention, since the switching element is a MOS transistor, the same effect as that of the fifth aspect can be obtained, and also the effect described in the third aspect can be obtained.

According to the temperature sensor device of the eighth aspect of the present invention, the same effect as that of the fifth, sixth or seventh aspect is obtained and also the effect described in the fourth aspect is obtained.

According to the temperature sensor device of the ninth aspect of the present invention, the first fixed voltage, which is substantially constant irrespective of a temperature change, is converted into a current by the voltage-current conversion circuit, and the output of the voltage-current conversion circuit A current proportional to the current flows through the first and second bipolar transistors, and the current flowing through the first bipolar transistor is converted into a voltage by the third bipolar transistor and a first resistor having a first temperature characteristic. This voltage is converted into a current by a fourth bipolar transistor and a second resistor having a second temperature characteristic, and the difference between the current flowing through the second bipolar transistor and the current flowing through the fourth bipolar transistor is calculated. The difference current is converted into a voltage using the fifth resistor having a substantially constant resistance value regardless of the temperature change. To remove noise from a fixed voltage generating circuit including, it can be generated. As a result, low current consumption can be easily achieved. Also, the first
In addition, since the third and fourth resistors having the second and first temperature characteristics are connected to the emitter side of the second bipolar transistor, the change in the resistance value with respect to temperature is doubled as in the case of the fifth embodiment. can do.

Further, by selectively turning on and off the first and second switch elements, the resistance values of the first, second, third and fourth resistors having different temperature characteristics are adjusted to be substantially the same. Thus, a voltage that changes according to a temperature change can be generated with high accuracy. Other effects are the same as those of the fifth aspect.

According to the temperature sensor device of the tenth aspect of the present invention, two resistance values can be adjusted at the same time, and the same effect as the ninth aspect can be obtained, and also the effect described in the second aspect can be obtained. .

According to the temperature sensor device of the eleventh aspect of the present invention, two resistance values can be adjusted at the same time, and the same effect as the ninth aspect can be obtained, and also the effect described in the third aspect can be obtained. .

According to the temperature sensor device of the twelfth aspect of the present invention, the same effect as that of the ninth, tenth or eleventh aspect can be obtained, and also, the effect described in the fourth aspect can be obtained.

[Brief description of the drawings]

FIG. 1 is a circuit diagram showing a configuration of a temperature sensor device according to a first embodiment of the present invention.

FIG. 2 is a circuit diagram showing a configuration of a temperature sensor device according to a second embodiment of the present invention.

FIG. 3 is a circuit diagram showing a configuration of a temperature sensor device according to a second embodiment of the present invention.

FIG. 4 is a circuit diagram showing a configuration of a first fixed voltage generation circuit in FIGS. 1, 2 and 3;

FIG. 5 is a circuit diagram showing a configuration of a conventional fixed voltage generation circuit.

6 is a noise characteristic diagram of the temperature sensor device of FIG. 4 and the conventional temperature sensor device of FIG. 5;

FIG. 7 is a circuit diagram showing a configuration of a temperature sensor device according to a fourth embodiment of the present invention.

FIG. 8 is a circuit diagram showing a configuration of a temperature sensor device according to a fifth embodiment of the present invention.

FIG. 9 is a circuit diagram showing a configuration of a fixed voltage generating circuit used in the temperature sensor device of FIGS. 7 and 8;

FIG. 10 is a circuit diagram showing a configuration of a conventional temperature sensor device.

[Explanation of symbols]

1, 30, 51 Body circuit section of temperature sensor device 2, 29, 31, 52, 101, 102 Fixed voltage generation circuit 3, 32, 53, 54 Resistance value adjustment circuit 4, 5, 56, 100 Operational amplifier 6, 8 , 21-23, 33-35 PNP transistors 57-59, 84, 85, 93, 94 PNP transistors 7, 9, 24, 25, 36-38 NPN transistors 60-62, 86-88, 95, 96 NPN transistors 10 -14,26-28,39-44,55 Resistance 63-72,89,90,97,98 Resistance 17-20,47-50,77-83,91,92
Electrodes 103 to 105, 202, 203 Electrodes 212, 213, 216, 217 Electrodes 15, 16, 45, 46 Zener diodes 73 to 76, 225 Zener diodes 200, 201, 210, 211 N-channel MO
S transistor 214,215 P channel MOS transistor

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Shuju Shibuya 1006 Kazuma Kadoma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. F-term (reference) 2F056 PA09

Claims (12)

[Claims] A first fixed voltage generating circuit for generating a substantially constant first fixed voltage regardless of a temperature change; a first fixed voltage input to the first fixed voltage; A first voltage-current conversion circuit that converts the first fixed voltage into a first current and outputs the first current with a first resistor having a characteristic, and receives the first fixed voltage as an input, and converts the first fixed voltage into a second temperature characteristic. A second voltage-current conversion circuit that converts the current into a second current with a second resistor having the second voltage-current conversion circuit, and outputs the first and second voltages that are output from the first and second voltage-current conversion circuits, respectively. A current subtraction circuit that receives a current as an input and outputs a difference current between the first and second currents; a third end having one end connected to an output terminal of the current subtraction circuit and having a substantially constant resistance value regardless of a temperature change; A resistor, a temperature detection voltage output terminal provided at one end of the third resistor, A second fixed voltage generation circuit that is connected to the other end of the third resistor and generates a substantially constant second fixed voltage regardless of a temperature change; At least one is
A temperature sensor device comprising a plurality of resistors connected in parallel, wherein at least a part of the plurality of resistors is provided in a state where switch elements are connected in series. 2. The temperature sensor device according to claim 1, wherein the switch element is a Zener diode. 3. The temperature sensor device according to claim 1, wherein the switch element is a MOS transistor. 4. A first fixed voltage generating circuit, comprising: a first bipolar transistor of a first conductivity type having an emitter connected to a power supply voltage terminal, a base and a collector commonly connected, and an emitter connected to the power supply voltage terminal. And a second bipolar transistor of a first conductivity type having a base connected to the base of the first bipolar transistor, and a second bipolar transistor of a second conductivity type having a collector connected to the collector of the first bipolar transistor. And a collector of the second bipolar transistor, a collector of the second bipolar transistor, a base of the third bipolar transistor, a base connected to the base of the third bipolar transistor, and a common connection between the base and the collector. Between a fourth bipolar transistor and the emitters of the third and fourth bipolar transistors; A fourth resistor, a collector and a base connected to the emitter of the fourth bipolar transistor, a fifth bipolar transistor of the second conductivity type, an emitter of the fifth bipolar transistor, and a ground terminal. 4. The temperature sensor device according to claim 1, further comprising a fifth resistor connected between the first and second transistors, and a fixed voltage output terminal connected to an emitter of the fourth bipolar transistor. 5. A first fixed voltage generating circuit for generating a substantially fixed first fixed voltage irrespective of a temperature change, and receiving the first fixed voltage as an input and generating a current corresponding to the first fixed voltage. A voltage-current conversion circuit for converting and outputting; a first conductivity type first having an emitter connected to a power supply voltage terminal and having a base commonly connected to flow a current proportional to an output current of the voltage-current conversion circuit, respectively; And a second bipolar transistor; a third bipolar transistor of a second conductivity type having a collector and a base connected to the collector of the first bipolar transistor; and a collector connected to the collector of the second bipolar transistor. A fourth bipolar transistor of a second conductivity type having a base connected to the base of the third bipolar transistor; A first resistor having a first temperature characteristic and connected between an emitter of the third bipolar transistor and a ground terminal; a second resistor having a second temperature characteristic and an emitter of the fourth bipolar transistor; A second resistor connected between the second terminal and a ground terminal; and a third resistor having one end connected to a commonly connected collector of the second and fourth bipolar transistors and having a substantially constant resistance value regardless of a temperature change. A resistor; a temperature detection voltage output terminal provided at one end of the third resistor; and a second connected to the other end of the third resistor to generate a substantially constant second fixed voltage regardless of a temperature change. A fixed voltage generating circuit, wherein at least one of the first and second resistors includes:
A temperature sensor device comprising a plurality of resistors connected in parallel, wherein at least a part of the plurality of resistors is provided in a state where switch elements are connected in series. 6. The temperature sensor device according to claim 5, wherein the switch element is a Zener diode. 7. The temperature sensor device according to claim 5, wherein the switch element is a MOS transistor. 8. A first fixed voltage generating circuit, comprising: a fifth bipolar transistor of a first conductivity type having an emitter connected to a power supply voltage terminal, a base and a collector commonly connected, and an emitter connected to the power supply voltage terminal. A sixth bipolar transistor of the first conductivity type, the base of which is connected to the base of the fifth bipolar transistor, and the second conductivity type of the sixth bipolar transistor, the collector of which is connected to the collector of the fifth bipolar transistor. A collector of the seventh bipolar transistor and a collector of the sixth bipolar transistor, a base connected to the base of the seventh bipolar transistor, and a base and a collector commonly connected to each other. Between the eighth bipolar transistor and the emitters of the seventh and eighth bipolar transistors; A ninth bipolar transistor of a second conductivity type having a collector and a base connected to the emitter of the eighth bipolar transistor, an emitter of the ninth bipolar transistor, and a ground terminal. 8. The temperature sensor device according to claim 5, further comprising a fifth resistor connected between the first and second transistors, and a fixed voltage output terminal connected to an emitter of the eighth bipolar transistor. 9. A first fixed voltage generating circuit for generating a substantially fixed first fixed voltage irrespective of a temperature change, and receiving the first fixed voltage as an input and generating a current corresponding to the first fixed voltage. A voltage-current conversion circuit for converting and outputting; a first conductivity type first and second bipolar transistor having a base connected in common and flowing currents proportional to the output current of the voltage-current conversion circuit, respectively; A third bipolar transistor of a second conductivity type having a collector and a base connected to the collector of the first bipolar transistor; and a collector connected to the collector of the second bipolar transistor and having the collector connected to the third bipolar transistor. A fourth bipolar transistor of a second conductivity type having a base connected to the base; and a third bipolar transistor having a first temperature characteristic. A first resistor connected between the emitter of the transistor and a ground terminal; and a second resistor having second temperature characteristics and connected between the emitter of the fourth bipolar transistor and the ground terminal. A third resistor having a second temperature characteristic and connected between an emitter of the first bipolar transistor and a power supply voltage terminal; and a third resistor having a first temperature characteristic and having a second temperature characteristic. A fourth resistor connected between the emitter and the power supply voltage terminal; a common end connected to the commonly connected collectors of the second and fourth bipolar transistors; A fifth resistor, a temperature detection voltage output terminal provided at one end of the fifth resistor, and a second fixed voltage that is connected to the other end of the fifth resistor and that is substantially constant regardless of a temperature change. Occur And a second fixed voltage generating circuit, either at least one of the first and second resistors,
A first plurality of resistors connected in parallel;
At least a part of the plurality of resistors is provided in a state in which a first switch element is connected in series, and at least one of the third and fourth resistors is connected in parallel to a second plurality of resistors. Wherein at least a part of the second plurality of resistors is provided in a state where a second switch element is connected in series. 10. The temperature sensor device according to claim 9, wherein each of the first and second switch elements is a Zener diode. 11. The first switch element is a first conductivity type MO.
10. The temperature sensor device according to claim 9, wherein the temperature sensor device is an S transistor, and the second switch element is a second conductivity type MOS transistor. 12. A first fixed voltage generating circuit, comprising: a fifth bipolar transistor of a first conductivity type having an emitter connected to a power supply voltage terminal, a base and a collector commonly connected, and an emitter connected to the power supply voltage terminal. A sixth bipolar transistor of the first conductivity type, the base of which is connected to the base of the fifth bipolar transistor, and the second conductivity type of the sixth bipolar transistor, the collector of which is connected to the collector of the fifth bipolar transistor. A collector of the seventh bipolar transistor and a collector of the sixth bipolar transistor, a base connected to the base of the seventh bipolar transistor, and a base and a collector commonly connected to each other. An eighth bipolar transistor, and emitters of the seventh and eighth bipolar transistors A sixth resistor connected therebetween, a ninth bipolar transistor of a second conductivity type having a collector and a base connected to the emitter of the eighth bipolar transistor, and an emitter of the ninth bipolar transistor and ground. 11. A circuit according to claim 9, further comprising: a seventh resistor connected between said first and second terminals, and a fixed voltage output terminal connected to an emitter of said eighth bipolar transistor.
2. The temperature sensor device according to 1.