JP2000128986A - Polybenzoxazole precursor and polybenzoxazole - Google Patents

Polybenzoxazole precursor and polybenzoxazole

Info

Publication number
JP2000128986A
JP2000128986A JP10306729A JP30672998A JP2000128986A JP 2000128986 A JP2000128986 A JP 2000128986A JP 10306729 A JP10306729 A JP 10306729A JP 30672998 A JP30672998 A JP 30672998A JP 2000128986 A JP2000128986 A JP 2000128986A
Authority
JP
Japan
Prior art keywords
polybenzoxazole
formula
acid
polybenzoxazole precursor
represented
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10306729A
Other languages
Japanese (ja)
Inventor
Toshimasa Eguchi
敏正 江口
Mitsumoto Murayama
三素 村山
Takuya Hatao
卓也 畑尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Priority to JP10306729A priority Critical patent/JP2000128986A/en
Publication of JP2000128986A publication Critical patent/JP2000128986A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To obtain a polybenzoxazole precursor for the corresponding heat- resistant resin with excellent electrical properties, thermal properties and low water absorptivity, useful in semiconductor applications by including repeating units of a specific structure. SOLUTION: This polybenzoxazole precursor is composed of a repeating unit of formula I [(n) is 1-1,000; R1 and R2 are each a fluoroalkyl group of CmF2m+1 ((m) is 1-10); X is a bivalent or higher valent fluorogroup-contg. aromatic group; Y is a bivalent or higher valent organic group], obtained, for example, by acid chloride method or condensation reaction between a bisaminophenol of formula II (e.g. a compound of formula III) and a dicarboxylic acid of the formula HOOC-Y COOH (e.g. isophthalic acid) in the presence of a dehydrocondensation agent such as a polyphosphoric acid or dicyclohexyldicarbodiimide.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は電気特性、熱特性、
機械特性、物理特性に優れたポリベンゾオキサゾール樹
脂に関するものであり、半導体用の層間絶縁膜、保護
膜、多層回路の層間絶縁膜、フレキシブル銅張版のカバ
ーコート、ソルダーレジスト膜、液晶配向膜などとして
適用できる。
TECHNICAL FIELD The present invention relates to electrical characteristics, thermal characteristics,
This is related to polybenzoxazole resins with excellent mechanical and physical properties, such as interlayer insulating films for semiconductors, protective films, interlayer insulating films for multilayer circuits, cover coats for flexible copper clad plates, solder resist films, liquid crystal alignment films, etc. Applicable as

【0002】[0002]

【従来の技術】半導体用絶縁材料に求められている特性
のなかで電気特性、特に誘電率と耐熱性は最も重要な特
性である。この2つの特性を両立させるために耐熱性の
高い有機系の絶縁膜が期待されている。例えば従来から
用いられている二酸化シリコン等の無機の絶縁膜は高耐
熱性を示すが誘電率が高く、前述の特性について両立が
困難になりつつある。ポリイミド樹脂に代表される有機
系の絶縁膜は電気特性、耐熱性に優れ2つの特性の両立
が可能であり、実際にソルダーレジスト、カバーレイ、
液晶配向膜などに用いられている。しかしながら近年の
半導体の高機能化、高性能化にともない、電気特性、耐
熱性について著しい向上が必要とされているため更に高
性能な樹脂が必要とされるようになっている。特に誘電
率について2.5を下回るような低誘電率材料が期待さ
れており、ポリイミド樹脂においてもフッ素並びにトリ
フルオロメチル基を高分子内に導入することにより電気
特性と耐熱性を両立することが試みられているが、現時
点では必要とされる水準まで達していない。
2. Description of the Related Art Among the characteristics required for insulating materials for semiconductors, electrical characteristics, particularly dielectric constant and heat resistance, are the most important characteristics. In order to make these two characteristics compatible, an organic insulating film having high heat resistance is expected. For example, a conventionally used inorganic insulating film such as silicon dioxide has high heat resistance, but has a high dielectric constant, and it is becoming difficult to achieve the above-mentioned characteristics at the same time. An organic insulating film represented by a polyimide resin has excellent electrical properties and heat resistance, and can achieve both of the two properties.
It is used for liquid crystal alignment films and the like. However, with the recent advancement of functions and performance of semiconductors, remarkable improvements in electrical characteristics and heat resistance have been required, so that even higher performance resins have been required. In particular, a low dielectric constant material having a dielectric constant of less than 2.5 is expected, and even in a polyimide resin, it is possible to achieve both electrical characteristics and heat resistance by introducing fluorine and a trifluoromethyl group into a polymer. Attempts have been made, but not to the required level at this time.

【0003】ポリイミド樹脂以外の樹脂ではポリベンゾ
オキサゾール樹脂が期待されている。ポリイミド樹脂は
イミド環にカルボキシル基を2個有していることで電気
特性に悪影響を及ぼしている。従って、一般にポリベン
ゾオキサゾール樹脂はポリイミド樹脂よりも電気特性に
優れ、かつ耐熱性も同等であるため、極めて有用な樹脂
である。しかし、要求されている電気特性の水準が非常
に高く、これまでのポリベンゾオキサゾール樹脂では要
求されている水準まで達していない。さらに低吸水性も
重要な特性の一つである。というのも樹脂が吸水する
と、電気特性と耐熱性の片方または両方が悪化するから
である。この点に於いてもポリベンゾオキサゾール樹脂
はポリイミド樹脂よりも一般に低吸水性を示すためより
優れた樹脂である。
[0003] Among resins other than polyimide resins, polybenzoxazole resins are expected. The polyimide resin has two bad carboxyl groups on the imide ring, which adversely affects the electrical characteristics. Therefore, polybenzoxazole resins are generally very useful resins because they have better electrical properties and the same heat resistance as polyimide resins. However, the required level of electric characteristics is extremely high, and the level of the conventional polybenzoxazole resin has not reached the required level. Furthermore, low water absorption is one of the important characteristics. This is because when the resin absorbs water, one or both of the electrical characteristics and the heat resistance deteriorate. Also in this respect, polybenzoxazole resin is generally superior to polyimide resin because it exhibits lower water absorption.

【0004】[0004]

【発明が解決しようとする課題】本発明は電気特性、耐
熱性、低吸水性に優れた耐熱性樹脂を提供する事を目的
とする。
SUMMARY OF THE INVENTION An object of the present invention is to provide a heat-resistant resin excellent in electric properties, heat resistance and low water absorption.

【0005】[0005]

【課題を解決するための手段】本発明は、[1]一般式
(1)で表わされる繰り返し単位を有するポリベンゾオ
キサゾール前駆体
The present invention provides [1] a polybenzoxazole precursor having a repeating unit represented by the general formula (1):

【0006】[0006]

【化1】 Embedded image

【0007】(式中、nは1〜1000までの整数を示
す。R1、R2はCm2m+1で表されるフルオロアルキル
基であり互いに同じであっても異なってもよい。mは1
〜10までの整数を示す。Xは2価以上のフルオロ基を
有する芳香族基を、Yは2価以上の有機基を表す。)で
あり、[2]Xが一般式(2)で表わされる[1]記載
のポリベンゾオキサゾール前駆体
(Wherein, n represents an integer of 1 to 1000. R 1 and R 2 are fluoroalkyl groups represented by C m F 2m + 1, which may be the same or different. m is 1
Shows an integer from 10 to 10. X represents an aromatic group having a divalent or higher valent fluoro group, and Y represents a divalent or higher valent organic group. Wherein [2] X is represented by the general formula (2).

【0008】[0008]

【化2】 Embedded image

【0009】(式中、R3はCk2k+1で表されるフルオ
ロアルキル基であり、R4〜R6はHまたはCk2k+1
表されるフルオロアルキル基であり互いに同じであって
も異なってもよい。kは0〜10までの整数を表す。)
であり、[3]R3がCF3でありR4〜R6のうちの一つ
がCF3であり、R4〜R6の残り2つがHである[2]
記載のポリベンゾオキサゾール前駆体であり、[4]X
が一般式(3)で表わされる[1]記載のポリベンゾオ
キサゾール前駆体
(Wherein R 3 is a fluoroalkyl group represented by C k F 2k + 1 , R 4 to R 6 are H or a fluoroalkyl group represented by C k F 2k + 1 , They may be the same or different, and k represents an integer of 0 to 10.)
[3] wherein R 3 is CF 3 , one of R 4 to R 6 is CF 3 , and the remaining two of R 4 to R 6 are H [2]
The polybenzoxazole precursor described in [4] X
Is a polybenzoxazole precursor according to [1], represented by the general formula (3):

【0010】[0010]

【化3】 Embedded image

【0011】(式中、R7はCk2k+1で表されるフルオ
ロアルキル基であり、R8〜R10はHまたはCk2k+1
表されるフルオロアルキル基であり互いに同じであって
も異なってもよい。kは0〜10までの整数を表す。)
であり、[5]上記[1]〜[4]のいずれかに記載の
ポリベンゾオキサゾール前駆体を脱水閉環した構造を有
するポリベンゾオキサゾールである。
(Wherein R 7 is a fluoroalkyl group represented by C k F 2k + 1 , R 8 to R 10 are H or a fluoroalkyl group represented by C k F 2k + 1 , They may be the same or different, and k represents an integer of 0 to 10.)
[5] A polybenzoxazole having a structure in which the polybenzoxazole precursor according to any one of the above [1] to [4] is dehydrated and closed.

【0012】[0012]

【発明の実施の形態】本発明者らは、前記従来の問題点
を鑑み、鋭意検討を重ねた結果、一般式(1)で表され
るポリベンゾオキサゾール前駆体、及びこのポリベンゾ
オキサゾール前駆体を脱水閉環した構造を有するポリベ
ンゾオキサゾール樹脂を見いだし、本発明を完成するに
至った。本発明のポリベンゾオキサゾール前駆体の製造
方法は、一般式(4)で示されるビスアミノフェノール
化合物と一般式(5)で示されるジカルボン酸を酸クロ
リド法やポリリン酸やジシクロヘキシルジカルボジイミ
ド等の脱水縮合剤の存在下での縮合反応等の方法により
得ることができる。
BEST MODE FOR CARRYING OUT THE INVENTION The present inventors have made intensive studies in view of the above-mentioned conventional problems, and as a result, have found that a polybenzoxazole precursor represented by the general formula (1) and a polybenzoxazole precursor A polybenzoxazole resin having a structure obtained by dehydration ring closure was found, and the present invention was completed. The method for producing a polybenzoxazole precursor according to the present invention comprises the steps of: subjecting a bisaminophenol compound represented by the general formula (4) and a dicarboxylic acid represented by the general formula (5) to an acid chloride method or dehydration of polyphosphoric acid, dicyclohexyl dicarbodiimide, or the like. It can be obtained by a method such as a condensation reaction in the presence of a condensing agent.

【0013】[0013]

【化4】 Embedded image

【0014】(式中、R1、R2はCm2m+1であり互い
に同じであっても異なってもよい。mは1〜10までの
整数を示す。Xは2価以上のフルオロ基を有する芳香族
基を表す。)
(Wherein R 1 and R 2 are C m F 2m + 1 and may be the same or different. M represents an integer of 1 to 10. X is a divalent or higher fluoro group. Represents an aromatic group having a group.)

【0015】[0015]

【化5】 Embedded image

【0016】(式中、Yは2価以上の有機基を表す。) 一般式(4)で示されるビスアミノフェノール化合物の
例としては、式(6)〜式(18)の化合物を挙げるこ
とができるが、必ずしもこれらに限られるわけではな
い。これらの中でも式(6)〜式(15)、式(17)
および式(18)などのビスアミノフェノール化合物を
用いた場合は特に良好な特性が得られ好ましい。これら
のビスアミノフェノール化合物は単独、または組み合わ
せて使用することができる。また、4,4’−ジアミノ
−3,3’−ジヒドロキシビフェニルや2,2’-ビス
(3-アミノ-4-ヒドロキシフェニル)ヘキサフルオロ
プロパン等の式(6)〜式(18)の化合物以外のビス
アミノフェノール化合物を併用することも性能を損なわ
ない範囲で可能である。
(In the formula, Y represents a divalent or higher valent organic group.) Examples of the bisaminophenol compound represented by the general formula (4) include compounds of the formulas (6) to (18). , But is not necessarily limited to these. Among these, the expressions (6) to (15) and (17)
When a bisaminophenol compound represented by the formula (18) or the like is used, particularly good characteristics are obtained, which is preferable. These bisaminophenol compounds can be used alone or in combination. In addition, compounds other than compounds of formulas (6) to (18) such as 4,4'-diamino-3,3'-dihydroxybiphenyl and 2,2'-bis (3-amino-4-hydroxyphenyl) hexafluoropropane It is also possible to use the bisaminophenol compound in combination within a range not to impair the performance.

【0017】[0017]

【化6】 Embedded image

【0018】[0018]

【化7】 Embedded image

【0019】[0019]

【化8】 Embedded image

【0020】[0020]

【化9】 Embedded image

【0021】ジカルボン酸の例を挙げるとイソフタル
酸、テレフタル酸、3−フルオロイソフタル酸、2−フ
ルオロイソフタル酸、3−フルオロフタル酸、2−フル
オロフタル酸、2−フルオロテレフタル酸、2,4,
5,6−テトラフルオロイソフタル酸、3,4,5,6
−テトラフルオロフタル酸、2,2−ビス(4−カルボ
キシフェニル)ヘキサフルオロプロパン、パーフルオロ
スベリン酸、2,2’−ビス(トリフルオロメチル)−
4,4’−ビフェニレンジカルボン酸、4,4’−オキ
シビス安息香酸等であるが、必ずしもこれらに限られる
ものではない。また2種類以上のカルボン酸を組み合わ
せて使用することも可能である。
Examples of dicarboxylic acids include isophthalic acid, terephthalic acid, 3-fluoroisophthalic acid, 2-fluoroisophthalic acid, 3-fluorophthalic acid, 2-fluorophthalic acid, 2-fluoroterephthalic acid, 2,4,4
5,6-tetrafluoroisophthalic acid, 3,4,5,6
-Tetrafluorophthalic acid, 2,2-bis (4-carboxyphenyl) hexafluoropropane, perfluorosuberic acid, 2,2'-bis (trifluoromethyl)-
Examples thereof include 4,4′-biphenylenedicarboxylic acid and 4,4′-oxybisbenzoic acid, but are not necessarily limited thereto. It is also possible to use two or more carboxylic acids in combination.

【0022】酸クロリド法によるポリベンゾオキサゾー
ル前駆体の合成の例を挙げると、ビスアミノフェノール
化合物を、通常N−メチル−2−ピロリドン等の極性溶
媒に溶解し、ピリジン等の酸受容剤存在下で、テトラフ
ルオロイソフタル酸クロリドと−30℃から室温で反応
することによりポリベンゾオキサゾール前駆体を得るこ
とができる。本発明のポリベンゾオキサゾール樹脂は、
このようにして得られたポリベンゾオキサゾール前駆体
を従来法の通り、加熱または、脱水剤で処理することに
より縮合反応し、得ることができる。これに、必要によ
り各種添加剤として、界面活性剤やカップリング剤等を
添加し、半導体用層間絶縁膜、保護膜、多層回路の層間
絶縁膜、フレキシブル銅張板のカバーコート、ソルダー
レジスト膜、液晶配向膜等として用いることができる。
また、本発明におけるポリベンゾオキサゾール樹脂は、
その前駆体と感光剤としてナフトキノンジアジド化合物
を用いることで、感光性樹脂組成物として用いることが
可能である。
As an example of the synthesis of a polybenzoxazole precursor by the acid chloride method, a bisaminophenol compound is usually dissolved in a polar solvent such as N-methyl-2-pyrrolidone, and the solution is dissolved in the presence of an acid acceptor such as pyridine. To react with tetrafluoroisophthalic chloride at -30 ° C to room temperature to obtain a polybenzoxazole precursor. Polybenzoxazole resin of the present invention,
The polybenzoxazole precursor thus obtained can be subjected to a condensation reaction by heating or treating with a dehydrating agent as in a conventional method. If necessary, various additives such as surfactants and coupling agents are added, and interlayer insulating films for semiconductors, protective films, interlayer insulating films for multilayer circuits, cover coats for flexible copper clad boards, solder resist films, It can be used as a liquid crystal alignment film or the like.
Further, the polybenzoxazole resin in the present invention,
By using a naphthoquinonediazide compound as the precursor and the photosensitizer, it can be used as a photosensitive resin composition.

【0023】本発明のポリベンゾオキサゾール前駆体
は、通常、これを溶剤に溶解し、ワニス状にして使用す
るのが好ましい。溶剤としては、N−メチル−2−ピロ
リドン、γ−ブチロラクトン、N,N−ジメチルアセト
アミド、ジメチルスルホキシド、ジエチレングリコール
ジメチルエーテル、ジエチレングリコールジエチルエー
テル、ジエチレングリコールジブチルエーテル、プロピ
レングリコールモノメチレエーテル、ジプロピレングリ
コールモノメチレエーテル、プロピレングリコールモノ
メチルエーテルアセテート、乳酸メチル、乳酸エチル、
乳酸ブチル、メチル−1,3−ブチレングリコールアセ
テート、1,3−ブチレングリコール−3−モノメチル
エーテル、ピルビン酸メチル、ピルビン酸エチル、メチ
ル−3−メトキシプロピオネート等を1種、または2種
以上混合して用いることが出来る。
It is preferable that the polybenzoxazole precursor of the present invention is usually dissolved in a solvent and used in the form of a varnish. Examples of the solvent include N-methyl-2-pyrrolidone, γ-butyrolactone, N, N-dimethylacetamide, dimethyl sulfoxide, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dibutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, Propylene glycol monomethyl ether acetate, methyl lactate, ethyl lactate,
One or two or more of butyl lactate, methyl-1,3-butylene glycol acetate, 1,3-butylene glycol-3-monomethyl ether, methyl pyruvate, ethyl pyruvate, methyl-3-methoxypropionate, etc. They can be used in combination.

【0024】本発明のポリベンゾオキサゾール前駆体の
使用方法は、前記該前駆体を上記溶剤に溶解し、適当な
支持体、例えばガラス、金属、シリコーンウエハーやセ
ラミック基盤等に塗布する。塗布方法は、スピンナーを
用いた回転塗布、スプレーコーターを用いた噴霧塗布、
浸漬、印刷、ロールコーティング等が選ばれる。このよ
うにして、塗膜を形成した後、加熱処理をして、ポリベ
ンゾオキサゾールに変換し用いることが好ましい。ま
た、ジカルボン酸成分を選択することにより溶剤に可溶
なポリベンゾオキサゾールとして用いることもできる。
In the method of using the polybenzoxazole precursor of the present invention, the precursor is dissolved in the above-mentioned solvent and applied to a suitable support, for example, a glass, metal, silicone wafer or ceramic substrate. The coating method is spin coating using a spinner, spray coating using a spray coater,
Immersion, printing, roll coating, etc. are selected. After forming a coating film in this way, it is preferable to perform a heat treatment to convert it to polybenzoxazole before use. Further, by selecting a dicarboxylic acid component, it can be used as a polybenzoxazole which is soluble in a solvent.

【0025】[0025]

【実施例】以下に実施例により本発明を具体的に説明す
るが、実施例の内容になんら限定されるものではない。
EXAMPLES The present invention will be described in detail with reference to the following Examples, but it should not be construed that the invention is limited thereto.

【0026】(実施例1)4,4’−ヘキサフルオロイ
ソプロピリデンジフェニル−1,1’ジカルボン酸25
g、塩化チオニル45ml及び乾燥DMF0.5mlを
反応容器に入れ、60℃で2時間反応させた。反応終了
後、過剰の塩化チオニルを加熱及び減圧により留去し
た。析出物をヘキサンを用いて再結晶を行い、4,4’
−ヘキサフルオロイソプロピリデンジフェニル−1,
1’ジカルボン酸クロリドを得た。式(9)で表される
ビスアミノフェノール化合物13.29g(0.02m
ol)を乾燥したジメチルアセトアミド100gに溶解
し、ピリジン3.96g(0.05mol)を添加後、
乾燥窒素下、−15℃でジメチルアセトアミド50gに
4,4’−ヘキサフルオロイソプロピリデンジフェニル
−1,1’ジカルボン酸クロリド8.46g(0.02
mol)を溶解したものを30分掛けて滴下した。滴下
終了後、室温まで戻し、室温で5時間攪拌した。その
後、反応液を蒸留水1000mlに滴下し、沈殿物を集
め、乾燥することによりポリベンゾオキサゾール前駆体
を得た。
(Example 1) 4,4'-Hexafluoroisopropylidenediphenyl-1,1'dicarboxylic acid 25
g, 45 ml of thionyl chloride and 0.5 ml of dry DMF were placed in a reaction vessel and reacted at 60 ° C. for 2 hours. After completion of the reaction, excess thionyl chloride was distilled off by heating and reduced pressure. The precipitate was recrystallized using hexane to obtain 4,4 ′
-Hexafluoroisopropylidene diphenyl-1,
1 ′ dicarboxylic acid chloride was obtained. 13.29 g of a bisaminophenol compound represented by the formula (9) (0.02 m
ol) was dissolved in 100 g of dried dimethylacetamide, and 3.96 g (0.05 mol) of pyridine was added.
Under dry nitrogen at −15 ° C., 8.46 g (0.02 g) of 4,4′-hexafluoroisopropylidenediphenyl-1,1 ′ dicarboxylic acid chloride was added to 50 g of dimethylacetamide.
mol) was added dropwise over 30 minutes. After completion of the dropwise addition, the mixture was returned to room temperature and stirred at room temperature for 5 hours. Thereafter, the reaction solution was dropped into 1000 ml of distilled water, and the precipitate was collected and dried to obtain a polybenzoxazole precursor.

【0027】このポリベンゾオキサゾール前駆体をN−
メチル−2−ピロリドンに溶解し、孔径0.2μmのテ
フロン(登録商標)フィルターで濾過しワニスを得た。
このワニスをガラス板上にギャップ300μmのドクタ
ーナイフを用いて塗布した。その後、オーブン中で70
℃1時間乾燥し、はく離して膜厚20μmのポリベンゾ
オキサゾール前駆体フィルムを得た。そのフィルムを金
枠で固定し、150℃/30分、250℃/30分、3
50℃/30分の順で窒素雰囲気下で加熱し、ポリベン
ゾオキサゾールを得た。この試験フィルムを用いて、各
種特性を評価し、その結果を表1にまとめた。
This polybenzoxazole precursor is converted to N-
It was dissolved in methyl-2-pyrrolidone and filtered through a Teflon (registered trademark) filter having a pore size of 0.2 μm to obtain a varnish.
This varnish was applied on a glass plate using a doctor knife having a gap of 300 μm. Then, in the oven 70
The resultant was dried at a temperature of 1 ° C. for 1 hour and peeled off to obtain a polybenzoxazole precursor film having a thickness of 20 μm. The film was fixed with a metal frame, 150 ° C./30 minutes, 250 ° C./30 minutes, 3
Heating was performed under a nitrogen atmosphere in the order of 50 ° C./30 minutes to obtain polybenzoxazole. Various characteristics were evaluated using this test film, and the results are summarized in Table 1.

【0028】(実施例2)1,2,3,5−テトラフル
オロ−2,6−ジシアノベンゼン50gを65%硫酸水
250gに加えた。加熱して溶解させたあと還流条件下
3時間加熱した。析出した結晶を吸引濾過し、集めた結
晶を濃塩酸で洗浄後風乾した。このようにしてテトラフ
ルオロイソフタル酸を得た。式(9)で表されるビスア
ミノフェノール化合物13.29g(0.02mol)
の代わりに式(11)で表されるビスアミノフェノール
化合物14.57g(0.02mol)を、4,4’−
ヘキサフルオロイソプロピリデンジフェニル−1,1’
ジカルボン酸クロリド8.46g(0.02mol)の
代わりにテトラフルオロイソフタル酸から合成したテト
ラフルオロイソフタル酸クロリド5.42g(0.02
mol)を用いた以外は実施例1と同様にしてポリベン
ゾオキサゾールを作製し、評価を行った。
Example 2 50 g of 1,2,3,5-tetrafluoro-2,6-dicyanobenzene was added to 250 g of 65% aqueous sulfuric acid. After heating to dissolve, the mixture was heated under reflux conditions for 3 hours. The precipitated crystals were filtered by suction, and the collected crystals were washed with concentrated hydrochloric acid and air-dried. Thus, tetrafluoroisophthalic acid was obtained. 13.29 g (0.02 mol) of the bisaminophenol compound represented by the formula (9)
In place of the above, 14.57 g (0.02 mol) of the bisaminophenol compound represented by the formula (11) was added to 4,4′-
Hexafluoroisopropylidene diphenyl-1,1 '
Instead of 8.46 g (0.02 mol) of dicarboxylic acid chloride, 5.42 g (0.02 mol) of tetrafluoroisophthalic chloride synthesized from tetrafluoroisophthalic acid was used.
mol)), a polybenzoxazole was prepared and evaluated in the same manner as in Example 1.

【0029】(実施例3)式(9)で表されるビスアミ
ノフェノール化合物13.29g(0.02mol)の
代わりに式(17)で表されるビスアミノフェノール化
合物16.09g(0.02mol)を用いた以外は実
施例1と同様にしてポリベンゾオキサゾールを作製し、
評価を行った。
Example 3 Instead of 13.29 g (0.02 mol) of the bisaminophenol compound represented by the formula (9), 16.09 g (0.02 mol) of the bisaminophenol compound represented by the formula (17) A polybenzoxazole was prepared in the same manner as in Example 1 except that
An evaluation was performed.

【0030】(実施例4)式(9)で表されるビスアミ
ノフェノール化合物13.29g(0.02mol)の
代わりに式(18)で表されるビスアミノフェノール化
合物16.25g(0.02mol)を用いた以外は実
施例1と同様にしてポリベンゾオキサゾールを作製し、
評価を行った。
(Example 4) Instead of 13.29 g (0.02 mol) of the bisaminophenol compound represented by the formula (9), 16.25 g (0.02 mol) of the bisaminophenol compound represented by the formula (18) A polybenzoxazole was prepared in the same manner as in Example 1 except that
An evaluation was performed.

【0031】(実施例5)式(9)で表されるビスアミ
ノフェノール化合物13.29g(0.02mol)の
代わりに式(16)で表されるビスアミノフェノール化
合物12.31g(0.015mol)と2,2’−ビ
ス(3−アミノ−4−ヒドロキシ−5−トリフルオロフ
ェニル)ヘキサフルオロプロパン2.51g(0.00
5mol)を用いた以外は実施例1と同様にしてポリベ
ンゾオキサゾールを作製し、評価を行った。
Example 5 Instead of 13.29 g (0.02 mol) of the bisaminophenol compound represented by the formula (9), 12.31 g (0.015 mol) of the bisaminophenol compound represented by the formula (16) ) And 2.51 g of 2,2′-bis (3-amino-4-hydroxy-5-trifluorophenyl) hexafluoropropane (0.001 g)
Polybenzoxazole was prepared and evaluated in the same manner as in Example 1 except that 5 mol) was used.

【0032】(比較例1)式(9)で表されるビスアミ
ノフェノール化合物13.29g(0.02mol)の
代わりに3,3’−アミノ−4,4’−ヒドロキシビフ
ェニル4.32g(0.02mol)を用いた以外は実
施例1と同様にしてポリベンゾオキサゾールを作製し、
評価を行った。
Comparative Example 1 Instead of 13.29 g (0.02 mol) of the bisaminophenol compound represented by the formula (9), 4.32 g of 3,3'-amino-4,4'-hydroxybiphenyl (0 Polybenzoxazole was prepared in the same manner as in Example 1 except that
An evaluation was performed.

【0033】(比較例2)2,2−ビス[4、4’−
(4−アミノフェノキシ)フェニル]プロパン10.3
6g(0.02mol)を乾燥したN−メチル−2−ピ
ロリドン150gに溶解する。乾燥窒素下、10℃に溶
液を冷却してピロメリット酸二無水物4.36を投入し
た。投入から5時間後に室温まで戻し、室温で2時間攪
拌し、ポリイミド前駆体溶液を得た。このポリイミド前
駆体を孔径0.2μmのテフロンフィルターで濾過しワ
ニスを得た。このワニスをガラス板上にギャップ300
μmのドクターナイフを用いて塗布した。その後、オー
ブン中で70℃1時間乾燥し、はく離して膜厚20μm
のポリイミド前駆体フィルムを得た。そのフィルムを金
枠で固定し、150℃/30分、250℃/30分、3
50℃/30分の順で窒素雰囲気下で加熱し、ポリイミ
ドを得た。このポリイミドについて、実施例1と同様に
評価を行った。実施例と比較例での評価結果を表1に示
す。
Comparative Example 2 2,2-bis [4,4'-
(4-aminophenoxy) phenyl] propane 10.3
6 g (0.02 mol) is dissolved in 150 g of dried N-methyl-2-pyrrolidone. The solution was cooled to 10 ° C. under dry nitrogen, and 4.36 pyromellitic dianhydride was added. Five hours after the introduction, the temperature was returned to room temperature, and the mixture was stirred at room temperature for 2 hours to obtain a polyimide precursor solution. The polyimide precursor was filtered through a Teflon filter having a pore size of 0.2 μm to obtain a varnish. This varnish is placed on a glass plate with a gap of 300.
The coating was performed using a μm doctor knife. Then, it is dried in an oven at 70 ° C for 1 hour, peeled off, and the film thickness is 20 μm.
Was obtained. The film was fixed with a metal frame, 150 ° C./30 minutes, 250 ° C./30 minutes, 3
Heating was performed under a nitrogen atmosphere in the order of 50 ° C./30 minutes to obtain a polyimide. This polyimide was evaluated in the same manner as in Example 1. Table 1 shows the evaluation results of the examples and the comparative examples.

【0034】[0034]

【表1】 [Table 1]

【0035】表1の結果から、実施例1〜5の本発明の
ポリベンゾオキサゾール前駆体を用いて作製したポリベ
ンゾオキサゾールはいずれも誘電率が低く2.5を下回
っており、さらに耐熱性が高く、吸水率が低いという良
好な特性を示した。
From the results shown in Table 1, all of the polybenzoxazoles prepared using the polybenzoxazole precursors of the present invention of Examples 1 to 5 have a low dielectric constant, which is lower than 2.5, and furthermore a low heat resistance. It showed good characteristics of high and low water absorption.

【0036】比較例1では、ポリベンゾオキサゾールで
はあるものの本発明の一般式(1)で表される繰り返し
単位を有していないので、実施例1〜5に比べて誘電率
が高く、2.5を下回る値は得られなかった。
In Comparative Example 1, although it is a polybenzoxazole, it does not have the repeating unit represented by the general formula (1) of the present invention. No values below 5 were obtained.

【0037】比較例2ではポリイミド前駆体を用いて作
製したポリイミドを用いたために、誘電率と吸水率が実
施例1〜5に比べて高い値しか得られなかった。
In Comparative Example 2, since a polyimide prepared using a polyimide precursor was used, only higher values of dielectric constant and water absorption were obtained as compared with Examples 1 to 5.

【0038】[0038]

【発明の効果】本発明のポリベンゾオキサゾール前駆体
及びポリベンゾオキサゾールは、電気特性、耐熱性、物
理特性に優れた樹脂に関するものである。従って、これ
らの特性が要求される様々な分野、例えば半導体用の層
間絶縁膜、保護膜、多層回路の層間絶縁膜、フレキシブ
ル銅張版のカバーコート、ソルダーレジスト膜、液晶配
向膜などとして有用な高分子材料である。
The polybenzoxazole precursor and polybenzoxazole of the present invention relate to a resin having excellent electrical properties, heat resistance and physical properties. Therefore, these properties are required in various fields such as interlayer insulating films for semiconductors, protective films, interlayer insulating films for multilayer circuits, cover coats for flexible copper clad plates, solder resist films, and liquid crystal alignment films. It is a polymer material.

フロントページの続き Fターム(参考) 4J043 PA02 PA19 PB24 PC145 PC146 PC155 PC156 QB15 QB21 QB23 QB34 RA52 SA06 SA71 SB01 TA12 TA26 TB01 UA122 UA131 UA132 UA141 UA151 UB061 UB062 UB121 VA012 VA052 VA092 VA101 XA19 XB20 YA06 YA08 ZA04 ZA06 ZA12 ZA31 ZA43 ZA46 ZA60 ZB02 ZB50 Continued on the front page F-term (reference) 4J043 PA02 PA19 PB24 PC145 PC146 PC155 PC156 QB15 QB21 QB23 QB34 RA52 SA06 SA71 SB01 TA12 TA26 TB01 UA122 UA131 UA132 UA141 UA151 UB061 UB062 UB121 VA012 VA052 VA092 VA101 XA06 Z06 Z08 ZA60 ZB02 ZB50

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 一般式(1)で表わされる繰り返し単位
を有するポリベンゾオキサゾール前駆体。 【化1】 (式中、nは1〜1000までの整数を示す。R1、R2
はCm2m+1で表されるフルオロアルキル基であり互い
に同じであっても異なってもよい。mは1〜10までの
整数を示す。Xは2価以上のフルオロ基を有する芳香族
基を、Yは2価以上の有機基を表す。)
1. A polybenzoxazole precursor having a repeating unit represented by the general formula (1). Embedded image (In the formula, n represents an integer of 1 to 1000. R 1 , R 2
Is a fluoroalkyl group represented by C m F 2m + 1, which may be the same or different. m represents an integer of 1 to 10. X represents an aromatic group having a divalent or higher valent fluoro group, and Y represents a divalent or higher valent organic group. )
【請求項2】 Xが一般式(2)で表わされる請求項1
記載のポリベンゾオキサゾール前駆体。 【化2】 (式中、R3はCk2k+1で表されるフルオロアルキル基
であり、R4〜R6はHまたはCk2k+1で表されるフル
オロアルキル基であり互いに同じであっても異なっても
よい。kは0〜10までの整数を表す。)
2. The method according to claim 1, wherein X is represented by the general formula (2).
The polybenzoxazole precursor according to the above. Embedded image (In the formula, R 3 is a fluoroalkyl group represented by C k F 2k + 1 , and R 4 to R 6 are H or a fluoroalkyl group represented by C k F 2k + 1 and are the same as each other. And k represents an integer of 0 to 10.)
【請求項3】 R3がCF3でありR4〜R6のうちの一つ
がCF3であり、R4〜R6の残り2つがHである請求項
2記載のポリベンゾオキサゾール前駆体。
Wherein one of R 3 is CF 3 R 4 to R 6 is CF 3, the polybenzoxazole precursor of the rest two claim 2, wherein the H of R 4 to R 6.
【請求項4】 Xが一般式(3)で表わされる請求項1
記載のポリベンゾオキサゾール前駆体。 【化3】 (式中、R7はCk2k+1で表されるフルオロアルキル基
であり、R8〜R10はHまたはCk2k+1で表されるフル
オロアルキル基であり互いに同じであっても異なっても
よい。kは0〜10までの整数を表す。)
4. The method according to claim 1, wherein X is represented by the general formula (3).
The polybenzoxazole precursor according to the above. Embedded image (In the formula, R 7 is a fluoroalkyl group represented by C k F 2k + 1 , and R 8 to R 10 are H or a fluoroalkyl group represented by C k F 2k + 1 and are the same as each other. And k represents an integer of 0 to 10.)
【請求項5】 請求項1〜4のいずれか1項に記載のポ
リベンゾオキサゾール前駆体を脱水閉環した構造を有す
るポリベンゾオキサゾール。
5. A polybenzoxazole having a structure in which the polybenzoxazole precursor according to claim 1 is dehydrated and ring-closed.
JP10306729A 1998-10-28 1998-10-28 Polybenzoxazole precursor and polybenzoxazole Pending JP2000128986A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10306729A JP2000128986A (en) 1998-10-28 1998-10-28 Polybenzoxazole precursor and polybenzoxazole

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10306729A JP2000128986A (en) 1998-10-28 1998-10-28 Polybenzoxazole precursor and polybenzoxazole

Publications (1)

Publication Number Publication Date
JP2000128986A true JP2000128986A (en) 2000-05-09

Family

ID=17960604

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10306729A Pending JP2000128986A (en) 1998-10-28 1998-10-28 Polybenzoxazole precursor and polybenzoxazole

Country Status (1)

Country Link
JP (1) JP2000128986A (en)

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003081925A (en) * 2001-09-13 2003-03-19 Nippon Kayaku Co Ltd NEW BIS-o-AMINOPHENOL AND METHOD FOR PRODUCING THE SAME
CN108884316A (en) * 2016-03-22 2018-11-23 日产化学株式会社 For manufacturing the polyhydroxyamide composition and polybenzoxazole resin film of substrate for electronic device
US10308644B2 (en) 2016-12-22 2019-06-04 Incyte Corporation Heterocyclic compounds as immunomodulators
US10618916B2 (en) 2018-05-11 2020-04-14 Incyte Corporation Heterocyclic compounds as immunomodulators
US10669271B2 (en) 2018-03-30 2020-06-02 Incyte Corporation Heterocyclic compounds as immunomodulators
US10793565B2 (en) 2016-12-22 2020-10-06 Incyte Corporation Heterocyclic compounds as immunomodulators
US10806785B2 (en) 2016-12-22 2020-10-20 Incyte Corporation Immunomodulator compounds and methods of use
US11401279B2 (en) 2019-09-30 2022-08-02 Incyte Corporation Pyrido[3,2-d]pyrimidine compounds as immunomodulators
US11407749B2 (en) 2015-10-19 2022-08-09 Incyte Corporation Heterocyclic compounds as immunomodulators
US11465981B2 (en) 2016-12-22 2022-10-11 Incyte Corporation Heterocyclic compounds as immunomodulators
US11535615B2 (en) 2015-12-22 2022-12-27 Incyte Corporation Heterocyclic compounds as immunomodulators
US11572366B2 (en) 2015-11-19 2023-02-07 Incyte Corporation Heterocyclic compounds as immunomodulators
US11608337B2 (en) 2016-05-06 2023-03-21 Incyte Corporation Heterocyclic compounds as immunomodulators
US11613536B2 (en) 2016-08-29 2023-03-28 Incyte Corporation Heterocyclic compounds as immunomodulators
US11673883B2 (en) 2016-05-26 2023-06-13 Incyte Corporation Heterocyclic compounds as immunomodulators
US11718605B2 (en) 2016-07-14 2023-08-08 Incyte Corporation Heterocyclic compounds as immunomodulators
US11753406B2 (en) 2019-08-09 2023-09-12 Incyte Corporation Salts of a PD-1/PD-L1 inhibitor
US11760756B2 (en) 2020-11-06 2023-09-19 Incyte Corporation Crystalline form of a PD-1/PD-L1 inhibitor
US11780836B2 (en) 2020-11-06 2023-10-10 Incyte Corporation Process of preparing a PD-1/PD-L1 inhibitor
US11866451B2 (en) 2019-11-11 2024-01-09 Incyte Corporation Salts and crystalline forms of a PD-1/PD-L1 inhibitor
US11866434B2 (en) 2020-11-06 2024-01-09 Incyte Corporation Process for making a PD-1/PD-L1 inhibitor and salts and crystalline forms thereof
US11873309B2 (en) 2016-06-20 2024-01-16 Incyte Corporation Heterocyclic compounds as immunomodulators

Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003081925A (en) * 2001-09-13 2003-03-19 Nippon Kayaku Co Ltd NEW BIS-o-AMINOPHENOL AND METHOD FOR PRODUCING THE SAME
US11407749B2 (en) 2015-10-19 2022-08-09 Incyte Corporation Heterocyclic compounds as immunomodulators
US11572366B2 (en) 2015-11-19 2023-02-07 Incyte Corporation Heterocyclic compounds as immunomodulators
US11866435B2 (en) 2015-12-22 2024-01-09 Incyte Corporation Heterocyclic compounds as immunomodulators
US11535615B2 (en) 2015-12-22 2022-12-27 Incyte Corporation Heterocyclic compounds as immunomodulators
CN108884316A (en) * 2016-03-22 2018-11-23 日产化学株式会社 For manufacturing the polyhydroxyamide composition and polybenzoxazole resin film of substrate for electronic device
CN108884316B (en) * 2016-03-22 2021-09-24 日产化学株式会社 Polyhydroxyamide composition for producing substrate for electronic device, and polybenzoxazole resin film
US11608337B2 (en) 2016-05-06 2023-03-21 Incyte Corporation Heterocyclic compounds as immunomodulators
US11673883B2 (en) 2016-05-26 2023-06-13 Incyte Corporation Heterocyclic compounds as immunomodulators
US11873309B2 (en) 2016-06-20 2024-01-16 Incyte Corporation Heterocyclic compounds as immunomodulators
US11718605B2 (en) 2016-07-14 2023-08-08 Incyte Corporation Heterocyclic compounds as immunomodulators
US11613536B2 (en) 2016-08-29 2023-03-28 Incyte Corporation Heterocyclic compounds as immunomodulators
US10806785B2 (en) 2016-12-22 2020-10-20 Incyte Corporation Immunomodulator compounds and methods of use
US10793565B2 (en) 2016-12-22 2020-10-06 Incyte Corporation Heterocyclic compounds as immunomodulators
US10308644B2 (en) 2016-12-22 2019-06-04 Incyte Corporation Heterocyclic compounds as immunomodulators
US11465981B2 (en) 2016-12-22 2022-10-11 Incyte Corporation Heterocyclic compounds as immunomodulators
US11339149B2 (en) 2016-12-22 2022-05-24 Incyte Corporation Heterocyclic compounds as immunomodulators
US11566026B2 (en) 2016-12-22 2023-01-31 Incyte Corporation Heterocyclic compounds as immunomodulators
US11787793B2 (en) 2016-12-22 2023-10-17 Incyte Corporation Heterocyclic compounds as immunomodulators
US10800768B2 (en) 2016-12-22 2020-10-13 Incyte Corporation Heterocyclic compounds as immunomodulators
US10669271B2 (en) 2018-03-30 2020-06-02 Incyte Corporation Heterocyclic compounds as immunomodulators
US11124511B2 (en) 2018-03-30 2021-09-21 Incyte Corporation Heterocyclic compounds as immunomodulators
US10906920B2 (en) 2018-05-11 2021-02-02 Incyte Corporation Heterocyclic compounds as immunomodulators
US10618916B2 (en) 2018-05-11 2020-04-14 Incyte Corporation Heterocyclic compounds as immunomodulators
US11414433B2 (en) 2018-05-11 2022-08-16 Incyte Corporation Heterocyclic compounds as immunomodulators
US11753406B2 (en) 2019-08-09 2023-09-12 Incyte Corporation Salts of a PD-1/PD-L1 inhibitor
US11401279B2 (en) 2019-09-30 2022-08-02 Incyte Corporation Pyrido[3,2-d]pyrimidine compounds as immunomodulators
US11866451B2 (en) 2019-11-11 2024-01-09 Incyte Corporation Salts and crystalline forms of a PD-1/PD-L1 inhibitor
US11760756B2 (en) 2020-11-06 2023-09-19 Incyte Corporation Crystalline form of a PD-1/PD-L1 inhibitor
US11780836B2 (en) 2020-11-06 2023-10-10 Incyte Corporation Process of preparing a PD-1/PD-L1 inhibitor
US11866434B2 (en) 2020-11-06 2024-01-09 Incyte Corporation Process for making a PD-1/PD-L1 inhibitor and salts and crystalline forms thereof

Similar Documents

Publication Publication Date Title
JP2000128986A (en) Polybenzoxazole precursor and polybenzoxazole
JP2000128987A (en) Polybenzoxazole precursor and polybenzoxazole
JP2000128984A (en) Polybenzoxazole precursor and resin
US6297351B1 (en) Polybenzoxazole resin and precursor thereof
JP2000212281A (en) Polybenzoxazole precursor and polybenzoxazole resin
JP2001163975A (en) Polybenzoxazole resin and its precursor
JP2001114893A (en) Polybenzoxazole resin and its precursor
JP2000143804A (en) Polybenzoxazole precursor and resin
JP2003105085A (en) Material for organic insulating film and organic insulating film
JP3681106B2 (en) Organic insulating film material and organic insulating film
JP4945858B2 (en) Organic insulating film material and organic insulating film
JP2000219742A (en) Polybenzoxazole precursor and polybenzoxazole resin
JP4442065B2 (en) Organic insulating film material and organic insulating film
JP4378805B2 (en) Polybenzoxazole resin and precursor thereof
JP2000178356A (en) Polybenzoxazole precursor and polybenzoxazole resin
JP2000186146A (en) Polybenzoxazole precursor and polybenzoxazole resin
JP2000143803A (en) Polybenzoxazole precursor and resin
JP2000264966A (en) Polybenzoxazole precursor and resin
JP2000143805A (en) Polybenzoxazole precursor and polybenzoxazole resin
JP2000186145A (en) Polybenzoxazole precursor and polybenzoxazole resin
JP2001163976A (en) Polybenzoxazole resin and its precursor
JP2000186144A (en) Polybenzoxazole precursor and polybenzoxazole resin
JP2003105086A (en) Heat-resistant resin precursor, heat-resistant resin, insulation-film material, and semiconductor device
JP2000128985A (en) Polybenzoxazole precursor and polybenzoxazole resin
JP2000248077A (en) Organic insulation film material for semiconductor and production