JP2000114601A - Semiconductor device having quantum wave interference layer and method of designing quantum wave interference layer constituting semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make a quantum wave interference layer functioning as a carrier reflection layer having a high reflectivity by determining the thicknesses of a first and second layers of the quantum wave interference layer functioning so that the emitted light intensity of a light emitting element having the quan tum wave interference layer is near a max. value. SOLUTION: On a substrate 10 a buffer layer 12, an n-type contact layer 14, an n-type clad layer 16, a light emitting layer 18 and an electron reflective layer 20 to be a quantum wave interference layer are formed in this order. The electron reflective layer 20 has a 15-period multilayer quantum structure composed of a first p-GaInP layer W and a second p-AlInP layer B with a p-AlGaInP δ layer formed at the boundary of the first and second layers W, B. After examining the relation between the thicknesses of the first and second layers W, B and the light emitting power, it results that when the first and second layers W, B are 5 nm and 7 nm thick, the light emitting power is max.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a quantum wave interference layer for efficiently reflecting carriers composed of electrons or holes. In particular, in a light-emitting element such as a laser or a light-emitting diode, it can be used to efficiently confine carriers in an active layer and improve luminous efficiency. In addition, other F
In semiconductor devices such as ET and solar cells, the present invention can be applied to devices that reflect carriers and enable efficient use of carriers.

[0002]

2. Description of the Related Art A conventional semiconductor laser has a double hetero junction structure in which an active layer is sandwiched between an n-type cladding layer and a p-type cladding layer. In this laser, electrons and holes are efficiently confined by the cladding layer forming a potential barrier to the active layer. However, the carrier overflows beyond the potential barrier of the cladding layer, so that there is a problem that the luminous efficiency cannot be sufficiently improved.

[0003]

SUMMARY OF THE INVENTION For this purpose, JJAP Let
As described in ters Vol. 29, No. 11 (1990) L1977-L1980, it has been proposed to provide a multiple quantum well structure in a cladding layer. However, this document does not suggest what value the kinetic energy of the carrier should be.
The optimum thickness of the first layer and the second layer pointed out by this document is 1/4 to 1/4 of the optimum thickness by the present inventors.
1/6. As a result, there is a problem that the carriers cannot be sufficiently accumulated in the active layer, and the emission intensity is not sufficiently improved.

Therefore, the present inventors considered that quantum waves of carriers are multiple-reflected by the multi-layer structure by making the multi-layer structures having different bandwidths correspond to the dielectric multilayer film in the multiple reflection of light. We thought that this reflection would allow effective confinement of carriers, and created the optimal structure of the quantum wave interference layer. Accordingly, it is an object of the present invention to provide a quantum wave interference layer functioning as a carrier reflection layer having a high reflectance and a method of designing the same. Another object of the present invention is to further improve the reflectivity of quantum waves by adding a novel layer structure to a multi-layer structure having different bandwidths. Still another object of the present invention is to provide a quantum wave interference layer having another structure capable of reflecting a quantum wave and a design method thereof.

[0005]

According to a first aspect of the present invention, there is provided a semiconductor device having a quantum wave interference layer in which a first layer and a second layer having a wider bandwidth than the first layer are stacked at multiple periods. ,
In the method of designing the thickness of the first layer and the second layer, when a light emitting device having a quantum wave interference layer is manufactured and the light emission intensity is measured,
By fixing the thickness of the second layer of the quantum interference layer of the light emitting device,
A light-emitting element in which the thickness of the layer is changed is manufactured, and a range of the thickness of the first layer that indicates the vicinity of the maximum value of the emission intensity is obtained; and the thickness of the first layer of the quantum interference layer of the light-emitting element is determined. The light emitting device having the quantum wave interference layer is obtained by fixing the light emitting element and manufacturing the light emitting element in which the thickness of the second layer is changed, and obtaining the range of the thickness of the second layer showing the vicinity of the maximum value of the emission intensity. It is characterized in that the thicknesses of the first layer and the second layer are determined so that the light emission intensity of the device becomes near the maximum value.

According to a second aspect of the present invention, the thickness of each of the first layer and the second layer is 20 nm or less.

According to a third aspect of the present invention, a first layer and a second layer having a wider bandwidth than the first layer are laminated at multiple periods, and the thickness between the first layer and the second layer is increased. In a method of designing the thickness of the first layer, the second layer, and the δ layer of a semiconductor device having a quantum wave interference layer having a δ layer that changes energy band rapidly, the quantum wave interference layer is When a light emitting device having a light emitting device was manufactured and the light emission intensity was measured, the light emitting device was manufactured by fixing the thickness of the second layer and the δ layer of the quantum interference layer of the light emitting device and changing the thickness of the first layer. Then, the operation of obtaining the range of the thickness of the first layer showing the vicinity of the maximum value of the emission intensity, and the thickness of the second layer by fixing the thicknesses of the first layer and the δ layer of the quantum wave interference layer of the light emitting device Of light-emitting elements each having a different light-emitting element, obtaining the range of the thickness of the second layer showing the vicinity of the maximum value of the light-emitting intensity, and the amount of light-emitting elements The light-emitting elements in which the thickness of the δ layer is changed by fixing the thickness of the first and second layers of the wave interference layer are respectively manufactured, and the range of the thickness of the δ layer showing the vicinity of the maximum value of the luminescence intensity is determined. The thickness of the first layer, the second layer, and the δ layer is determined so that the light emission intensity of the light emitting device having the quantum wave interference layer is close to the maximum value by the work required.

According to a fourth aspect of the present invention, the thickness of each of the first and second layers is 20 nm or less, and the thickness of the δ layer is 5 nm or less.

The invention of claim 5 is characterized in that the quantum wave interference layer of the light emitting element for measuring the light emission intensity is a clad layer in contact with the light emitting layer as a reflection layer for preventing the transmission of carriers from the light emitting layer.

The invention according to claim 6 is characterized in that the light emitting element is a light emitting diode, and the quantum wave interference layer of the light emitting element for measuring light emission intensity is a cladding layer.

[0011] The invention of claim 7 is the first to sixth aspects of the present invention.
A semiconductor device having a quantum wave interference layer designed by the design method according to any one of the above.

An eighth aspect of the present invention is characterized in that a quantum wave interference layer functioning as a carrier reflection layer is provided. A ninth aspect of the present invention is characterized by having a quantum wave interference layer as a cladding layer.

According to a tenth aspect of the present invention, in a light emitting device having a structure in which an active layer is sandwiched between an n-type layer and a p-type layer, at least one of the n-type layer and the p-type layer has the above-described design. A quantum wave interference layer designed by a method (claims 1 to 6) is formed.

According to an eleventh aspect of the present invention, the active layer and the n-type or p-type layer are heterojunction, the n-type layer is an n-type cladding layer, the p-type layer is a p-type cladding layer, The carrier is reflected by the wave interference layer and confined in the active layer.

According to a twelfth aspect of the present invention, in the field effect transistor, a quantum wave interference layer designed by the above design method (claims 1 to 6) is formed adjacent to the channel. The invention of claim 13 is
In a photoelectric conversion element having a pn junction, a p-layer or an n-type
A quantum wave interference layer designed by the above design method (claims 1 to 6) for reflecting minority carriers on the layer is formed.

[0016]

The operation and effects of the invention are described below. The principle of the quantum wave interference layer according to the present invention will be described below. FIG. 1 shows conduction bands of a multilayer structure having different bandwidths. It is assumed that electrons are conducted from left to right in the figure.
The electrons contributing to conduction are considered to be electrons existing near the bottom of the conduction band of the second layer having a wide bandwidth. The kinetic energy of this electron is E. Then, the electrons conducted from the second layer B to the first layer W having a small bandwidth are accelerated by the band potential difference V from the second layer to the first layer, and the kinetic energy in the first layer W becomes E + V. Also, the electrons conducted from the first layer W to the second layer B are decelerated by the band potential difference V from the first layer to the second layer, and the kinetic energy of the electrons in the second layer B returns to E. The kinetic energy of the conduction electrons undergoes such modulation due to the potential energy of the multilayer structure.

On the other hand, when the thicknesses of the first layer and the second layer are substantially equal to the quantum wavelength of the electrons, the electrons behave as waves. The quantum wave of an electron is obtained by the following equations (1) and (2) using the kinetic energy of the electron. D _W = n _W λ _W / 4 = n _W h / 4 [2 m _W (E + V)] ^1/2 (1) D _B = n _B λ _B / 4 = n _B h / 4 (2 m _B E) ^{1 / 2} … (2)

Where D _W and D _B are the thicknesses of the first and second layers,
λ _W and λ _B are quantum wavelengths of electrons in the first and second layers, h
Is the Planck's constant, m _W is the effective mass of the carrier in the first layer, m _B is the effective mass of the carrier in the second layer, and E is the motion of the carrier flowing into the second layer near the lowest energy level of the second layer. The energy, V, is the band potential difference of the second layer with respect to the first layer, and n _W and n _B are odd numbers. That is, in the expressions (1) and (2), the thickness of the first layer and the second layer is set to １ ／ of the wavelength of the quantum wave of electrons in each layer.

Further, when the wave number vector of the quantum wave in the second layer B and the first layer W is K _B and K _W , the wave reflectance R is as follows:
It is obtained by the following equation. _{R = (| K W | -} | K B |) / (| K W | + | K B |) = [{m W (E + V)} 1/2 - (m B E) 1/2] / [{ _{m W (E + V)}} 1/2 + (m B E) 1/2] = [1- {m B E / m W (E + V)} 1/2] / [1+ {m B E / m W (E + V )｝ ^1/2 ]… (3)

Assuming that m _B = m _W , the reflectance is expressed by the following equation. R = [1- {E / (E + V)} ^1/2 ] / [1+ {E / (E + V)} ^1/2 ] (4)

If E / (E + V) = x, equation (4) can be modified as follows. R = (1−x ^1/2 ) / (1 + x ^1/2 ) (5)

FIG. 2 shows the characteristic of the reflectivity R with respect to x.

When the second layer B and the first layer W are respectively multiplexed in the S layer, the reflectance R _S at the incident end face of the quantum wave is given by the following equation. R _S = [(1−x ^S ) / (1 + x ^S )] ² (6)

When x.ltoreq.1 / 10, R.gtoreq.0.52, and the relationship between E and V is given by E.ltoreq.V / 9 (7). Kinetic energy E of conduction electrons in the second layer B
Is near the bottom of the conduction band, the relationship of equation (7) is satisfied, and the reflectance R at the boundary between the second layer B and the first layer W is 5
It becomes 2% or more. With such multilayer structures having different bandwidths, quantum waves can be reflected efficiently.

Also, the first layer W having a thickness of the second layer B using x is used.
The ratio D _B / D _W with respect to the thickness of the _film is obtained by the following equation. D _B / D _W = [m _W / (m _B x)] ^1/2 (8)

Also in the valence band, the energy level at the bottom of the band fluctuates periodically, but the band potential difference V
Is different from the band potential difference of the conduction band, and the effective mass of holes in the first and second layers is different from the effective mass of electrons. The set values of the widths of the first layer and the second layer are not the conditions for obtaining a high reflectance for holes. Therefore, the quantum wave interference layer having the above structure can reflect only electrons and not holes.

Conversely, by designing the thicknesses of the first and second layers using the band potential difference of the valence band and the effective mass of the holes, the quantum wave interference layer reflects the holes to reflect the holes. It may be a layer that transmits electrons.

For such a design, for example, a light-emitting device having a quantum-wave interference layer, in which the thickness of the first and second layers of the p-side cladding layer is changed, is manufactured to maximize the light emission intensity. By optimizing the thicknesses of the first layer and the second layer near the value, it is possible to design the thicknesses of the first layer and the second layer of the quantum wave interference layer that reflects electrons. Similarly, for example, a light emitting device having a quantum wave interference layer, in which the thicknesses of the first layer and the second layer of the n-side cladding layer are changed, and the first layer having a light emission intensity near the maximum value, By optimizing the thickness of the second layer, the thicknesses of the first layer and the second layer of the quantum wave interference layer that reflects holes can be designed.

In order to optimize the thickness of the first layer and the second layer near the maximum value of the light emission intensity of the quantum wave interference layer, the thickness of the first layer and the second layer should be about 40 nm or less in order to reduce the wavelength to about the wavelength of the quantum wave. It is desirable to optimize it, and more desirably, to 20 nm or less. In addition, a quantum wave interference layer in which the first layer and the second layer each having an odd number times the thickness of the first layer and the second layer optimized as described above may be designed.

[Inventions of Claims 3 and 4] As shown in FIG. 3, at the boundary between the first layer W and the second layer B, the thicknesses at which the energy band is suddenly changed are the first layer W and the second layer B. Δ layer may be provided which is sufficiently thinner than the above. The reflectance at the boundary can be obtained by equation (5), but by providing a δ layer at the boundary, the band potential difference V can be increased and the x value can be reduced. Since the x value is small, the reflectance R increases. The δ layer is provided on the boundary on both sides of each first layer W as shown in FIG. 3A, but may be provided only on the boundary on one side. The δ layer has a second boundary at the boundary as shown in FIG.
Although a band potential higher than the potential at the bottom of the band of the layer B is provided, as shown in FIG. 3B, the energy level at the boundary is lower than that of the bottom of the band of the first layer. May be formed. Further, as shown in FIG. 3C, two δ layers having a higher energy level than the second layer B and a lower energy level than the first layer W may be formed at the boundary. By doing so, it is possible to increase the reflectivity of the quantum wave at the boundary between the first layer W and the second layer B, and to increase the reflectivity of the quantum wave as a whole when formed in multiple layers. can do.

Like the design of the first and second layers described above, the design of the thickness of the δ layer is similar to the design of the first layer and the second layer. The thickness of the δ-layer of the quantum wave interference layer that reflects electrons is produced by manufacturing the δ-layer with the thickness of the δ-layer between the layers changed, and optimizing the thickness of the δ-layer taking the vicinity of the maximum value of the emission intensity. Can be designed.

In order to optimize the thickness of the first layer and the second layer near the maximum value of the emission intensity of the quantum wave interference layer, a thickness of 40 nm or less is used in order to reduce the wavelength to about the wavelength of the quantum wave. It is desirable to optimize it, and more desirably, to 20 nm or less. Also, δ
Since the layers need to be sufficiently thinner than the thicknesses of the first and second layers, it is desirable to optimize the thickness to 10 nm or less, and more desirably 5 nm or less. In addition, a quantum wave interference layer in which the first layer and the second layer each having an odd number times the thickness of the first layer and the second layer optimized as described above may be designed.

[Inventions of Claims 7, 8, and 9] The semiconductor element having the quantum wave interference layer designed as described above can be expected to function as a layer for reflecting carriers, and the carriers can be efficiently used as a reflection layer. Can be trapped before.
As described above, this quantum wave interference layer functions as a reflection layer for only one carrier of electrons or holes, and does not function as a reflection layer for other carriers, so that only one carrier can be accumulated. .

[Inventions of Claims 10 and 11] By forming the above quantum wave interference layer on at least one of the p-conducting layer and the n-conducting layer sandwiching the active layer of the light emitting device, carriers can be effectively converted to the active layer. It can be confined and light output can be increased.

[Invention of claim 12] In the field effect transistor, by forming a quantum wave interference layer adjacent to the channel, carriers conducting through the channel can be effectively confined in the channel. The amplification factor and the S / N ratio are improved.

[Invention of Claim 13] In the photoelectric conversion device having a pn junction, a quantum wave interference layer for reflecting minority carriers is formed on the p-layer or the n-layer. Drift in the reverse direction can be prevented. Therefore, the photoelectric conversion efficiency increases.

[0037]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described based on specific embodiments. The present invention is not limited to the following examples.

[First Embodiment] FIG. 4 is a sectional view of a light emitting diode in which a quantum wave interference layer is formed on a p-type cladding layer.
On a substrate 10 made of GaAs, a thickness of 0.3 made of n-GaAs is used.
[mu] m, the buffer layer 12 of the electron concentration 2 × 10 ^{1 8} / cm ³ is formed, the thickness of 0.3μm made of n-Ga _0.51 In _0.49 P thereon, n-type contact of the electron concentration 2 × 10 ¹⁸ / cm ³ A layer 14 is formed. On the n-type contact layer 14, n-Al _0.51 In
An n-type cladding layer 16 made of _0.49 P and having a thickness of 1 μm and an electron concentration of 1 × 10 ¹⁸ / cm ³ is formed, and an impurity-free light-emitting layer 18 made of Ga _0.51 In _0.49 P and having a thickness of 14 nm is formed thereon. Is formed. Further, an electron reflection layer 20, which is a quantum wave interference layer, is formed on the light emitting layer 18. On the electron reflection layer 20, a thickness of 1 μm made of p-Al _0.51 In _0.49 P and a hole concentration of 1 A p-type cladding layer 22 of × 10 ¹⁸ / cm ³ is formed. Then, a second p-type contact layer 24 having a thickness of 0.2 μm made of p-Ga _0.51 In _0.49 P and a hole concentration of 2 × 10 ¹⁸ / cm ^{3 and} a 0.1 μm thick made of p-GaAs are formed on the layer 22. A first p-type contact layer 26 is formed. Further, an electrode 28 made of Au / Ge having a thickness of 0.2 μm is formed on the rear surface of the substrate 10, and a Au having a thickness of 0.2 μm is formed on the first p-type contact layer 26.
An electrode 30 made of / Zn is formed. The substrate 10
Has a diameter of 2 inches, and the main surface of the substrate has a plane orientation (1
00) is offset in the azimuth [011] direction by 15 °.

This light emitting diode is a gas source MBE
Manufactured by the method. The gas source MBE method uses a conventional M source that supplies all of the crystalline element materials from a solid source.
Unlike the BE method, group V elements (As, P) and the like are converted to gaseous raw materials (AsH
₃ , PH ₃ ) by pyrolysis of group III elements (In, Ga,
Al) is a molecular beam crystal growth method under ultra-high vacuum supplied from a solid source.

The electron reflection layer (quantum wave interference layer) 20 is shown in FIG.
As shown in the _figure , the first layer W has p-Ga _0.51 In _0.49 P and the second layer B has
_Is a multi-quantum structure of 15 periods using p-Al _0.51 In _0.49 P, and p-Al _0.33 Ga _0.33 In is formed at the boundary between the first layer W and the second layer B.
_A δ layer made of _0.33 P is formed. The thickness condition is determined by the above equations (1) and (2), and the first second layer B ₀
Is designed to be thick enough to prevent carrier tunnel conduction. The thickness of the δ layer is 1.3 nm.
In the energy diagram of FIG.
6, a light emitting layer 18 and an electron reflecting layer 20 are shown. FIG. 5A shows a state where no voltage is applied, and FIG.
Indicates a state where the voltage V is applied. With such a structure, electrons injected from the n-type cladding layer 16 into the light emitting layer 18 are effectively reflected by the electron reflecting layer 20 and confined in the light emitting layer 18. Also in the valence band, a multiple quantum well structure is formed. In this structure, the thickness conditions of the first layer W and the second layer B are determined so that electrons are effectively reflected. Therefore, holes are not reflected in this multiple quantum well structure. Therefore, the p-type cladding layer 2
The holes from 2 pass through the electron reflection layer 20 and easily reach the light emitting layer 18, and the light from the light emitting layer 1
8 confined.

The light emission output was measured while changing the thickness of the first layer W and the second layer B in various ways. When the thickness of the second layer B is 7 nm,
The emission output was measured while changing the thickness of the first layer W in various ways.
FIG. 8 shows the result. As understood from the measurement results, it is understood that the light emission output becomes maximum when the thickness of the first layer W is 5 nm. Next, the thickness of the first layer W was set to 5 nm, and the thickness of the second layer B was variously changed, and the light emission output was measured. FIG. 9 shows the result. It can be seen that the light emission output is maximum when the thickness of the second layer B is 7 nm. Thus, it can be seen that the light output of the electron reflecting layer 20 is maximized when the thickness of the first layer W is 5 nm and the thickness of the second layer B is 7 nm.
This output was about eight times that in the case where the electron reflection layer 20 was not provided.

[Second Embodiment] As shown in FIG. 6, the n-type cladding layer 16 is also provided with a hole reflection layer 32 adjacent to the light emitting layer 18. This hole reflection layer 32 is also the electron reflection layer 2.
It is structurally identical to 0. The energy diagram of this structure is as shown in FIG. However, in order to reflect holes effectively, the thickness of the first layer W is 1.0 nm,
The thickness of the second layer B is 1.2 nm. By forming the electron reflection layer 20 and the hole reflection layer 32 in this manner, an output approximately 16 times as high as that of a light emitting element without the electron reflection layer 20 and the hole reflection layer 32 was obtained. .

[Third Embodiment] Next, with the same structure as in FIG.
FIG. 10 shows the result of measuring the light emission output while changing the thickness of the δ layer of the electron reflection layer 20. In FIG. 10, the thickness of the first layer W is 5.6 nm and the thickness of the second layer B is 7.5 nm, which is not an optimum value. Output is obtained, about 1.
It can be seen that a 5 times output is obtained.

Fourth Embodiment A MOSFET is an element that forms a channel of an inversion layer immediately below an insulating film and conducts minority carriers. When the gate voltage increases, carriers in the inversion layer overflow and the S / N ratio decreases.
Therefore, as shown in FIG. 11, by providing a quantum wave interference layer having the above-mentioned structure composed of multiple periods of the second layer B of Si and the first layer W of Ge below the channel, carriers are confined in a narrow channel. be able to. As a result, it is possible to prevent the carrier from overflowing in the channel, and the S / N
It is possible to improve the ratio, improve the response speed, and reduce the driving power. When electrons are used as carriers in an n-channel FET, the optimum thickness of the second layer B is 6.8 nm, and the optimum thickness of the first layer W is 2.0 nm.

[Fifth Embodiment] As shown in FIG.
A quantum wave interference layer having the above structure can be provided in the junction photoelectric conversion semiconductor element. An electron reflecting layer for reflecting electrons is formed on the p layer, and a hole reflecting layer for reflecting holes is formed on the n layer. When light enters the pn junction, electron-hole pairs are generated. At this time, electrons are accelerated to the n-layer by the band potential difference, but some electrons drift to the p-layer side and do not contribute to photoelectric conversion. As the incident light intensity increases, the overflow of electrons into the p-layer increases. Therefore, by forming a quantum wave interference layer for reflecting electrons having the above structure in the p layer, it is possible to prevent electrons from drifting to the p layer side,
Electrons can be conducted to the n-layer side. Similarly, holes also have a drift toward the n-layer that does not contribute to photoelectric conversion. By providing the n-layer with the quantum wave interference layer having the above structure, holes can be reflected. This structure eliminates leakage current and improves photoelectric conversion efficiency.

Although the present invention has been described with reference to the embodiment in which the light emitting diode is provided with the quantum wave interference layer, the semiconductor laser may be provided with the quantum wave interference layer. In the above embodiment, the quantum wave interference layer is
Was constructed in multiple layers with the Ga _{0. 51} In _0.49 P and Al _0.51 In _0.49 P, the composition in the quaternary _{Al x Ga y In 1-xy} P (0 ≦ x, any value y ≦ 1) They may be formed with different ratios. Further, the quantum wave interference layer can be formed of a multiple junction of another group III-V compound semiconductor, a group II-VI compound semiconductor, Si / Ge, or another heterogeneous semiconductor.

[Brief description of the drawings]

FIG. 1 is an explanatory diagram for explaining the concept of the present invention.

FIG. 2 is a characteristic diagram showing the relationship between the reflectance R and the ratio x of the kinetic energy of carriers in the second layer to the kinetic energy in the first layer.

FIG. 3 is an explanatory diagram for explaining the concept of the present invention.

FIG. 4 is a cross-sectional view illustrating a structure of a light emitting device according to a specific example of the present invention.

FIG. 5 is an energy diagram of a light emitting device according to the example.

FIG. 6 is a cross-sectional view illustrating a structure of a light emitting device according to another embodiment.

FIG. 7 is an energy diagram of a light emitting device according to the example.

FIG. 8 is a measurement diagram showing a relationship between a light output and a thickness of a first layer.

FIG. 9 is a measurement diagram showing a relationship between a light output and a thickness of a second layer.

FIG. 10 is a measurement diagram showing a relationship between a light output and a thickness of a δ layer.

FIG. 11 is an energy diagram of a MOSFET according to another embodiment.

FIG. 12 is an energy diagram of a photoelectric conversion semiconductor device according to another example.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 ... Substrate 12 ... Buffer layer 14 ... N-type contact layer 16 ... N-type cladding layer 18 ... Light emitting layer 20 ... Electron reflection layer 22 ... P-type cladding layer 24 ... 2nd p-type contact layer 26 ... 1st p-type contact layer 28, 30 ... electrode 32 ... hole reflection layer

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01S 5/20 H01L 31/04 K

Claims (13)

[Claims] 1. The thickness of the first layer and the second layer of a semiconductor device having a quantum wave interference layer in which a first layer and a second layer having a wider bandwidth than the first layer are stacked at multiple periods. In the designing method, when producing a light emitting device having the quantum wave interference layer and measuring light emission intensity, fixing the thickness of the second layer of the quantum wave interference layer of the light emitting device to the first layer The light-emitting elements having different thicknesses are respectively manufactured, and the first light-emitting element which shows the vicinity of the maximum value of the light emission intensity is produced.
Work for obtaining the range of the thickness of the layer, and manufacturing the light emitting device in which the thickness of the first layer of the quantum wave interference layer of the light emitting device is fixed and the thickness of the second layer is changed. The second indicating the vicinity of the maximum value of the emission intensity.
Determining the thickness range of the layer by determining the thickness of the first layer and the second layer such that the light emission intensity of the light emitting element having the quantum interference layer is near the maximum value. A method for designing a quantum wave interference layer constituting a semiconductor device. 2. The method according to claim 1, wherein each of the first layer and the second layer has a thickness of 20 nm or less. 3. A lamination of a first layer and a second layer having a wider bandwidth than the first layer in a multiple cycle, and a sufficient distance between the first layer and the second layer compared to their thickness. A method for designing the thickness of the first layer, the second layer, and the δ layer of a semiconductor device having a quantum wave interference layer having a δ layer that rapidly changes an energy band, wherein the quantum wave interference layer is provided. When a light emitting device is manufactured and the light emission intensity is measured, the second layer of the quantum wave interference layer and the δ
Producing each of the light-emitting elements in which the thickness of the first layer is changed while fixing the thickness of the layer, and obtaining a range of the thickness of the first layer which indicates the vicinity of the maximum value of the emission intensity; The first layer of the quantum wave interference layer of the light emitting device and the δ
Producing each of the light-emitting elements in which the thickness of the second layer is changed while fixing the thickness of the layer, and obtaining a range of the thickness of the second layer that indicates a vicinity of a local maximum of the emission intensity; The light emitting devices in which the thickness of the δ layer is changed by fixing the thicknesses of the first layer and the second layer of the quantum wave interference layer of the light emitting device are respectively manufactured. The thickness of the first layer, the second layer, and the δ layer is determined such that the light emission intensity of the light emitting device having the quantum wave interference layer is close to a maximum value by the operation of obtaining the range of the thickness of the δ layer shown in FIG. A method for designing a quantum wave interference layer constituting a semiconductor device, characterized by determining the thickness. 4. The semiconductor device according to claim 3, wherein the thickness of each of the first layer and the second layer is 20 nm or less, and the thickness of the δ layer is 5 nm or less. How to design the quantum wave interference layer to be composed. 5. The quantum wave interference layer of the light emitting device for measuring the light emission intensity, wherein the quantum wave interference layer is a cladding layer in contact with the light emitting layer as a reflection layer for preventing transmission of carriers from the light emitting layer. A method for designing a quantum wave interference layer constituting the semiconductor device according to claim 4. 6. The light emitting element is a light emitting diode,
6. The method according to claim 5, wherein the quantum wave interference layer of the light emitting device for measuring the light emission intensity is a cladding layer. 7. A semiconductor device comprising a quantum wave interference layer designed by the design method according to claim 1. Description: 8. The semiconductor device according to claim 7, further comprising a quantum wave interference layer functioning as a carrier reflection layer. 9. The semiconductor light emitting device according to claim 7, comprising a quantum wave interference layer as a cladding layer. 10. A light emitting device having a structure in which an active layer is sandwiched between an n-conductivity type layer and a p-conductivity type layer, wherein at least one of the n-conductivity type layer and the p-conductivity type layer. 7. A light emitting device, wherein a quantum wave interference layer designed by the design method according to any one of 6 is formed. 11. The active layer and the n-type or p-type layer are heterojunction, the n-type layer is an n-type cladding layer, the p-type layer is a p-type cladding layer,
The light emitting device according to claim 10, wherein carriers are reflected by the quantum wave interference layer and confined in the active layer. 12. A field effect transistor, wherein a quantum wave interference layer designed by the design method according to claim 1 is formed adjacent to a channel. Transistor. 13. A photoelectric conversion element having a pn junction, which is designed by the design method according to claim 1 for reflecting minority carriers to a p-layer or an n-layer. An opto-electrical conversion element comprising a quantum wave interference layer.