JP2000114195A - Substrate processing apparatus, jig used for calibration of radiation termometer thereof, and calibrating method of the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To perform accurately the calibration of a radiation thermometer without heat accompaniment of. SOLUTION: In the chamber of a substrate processing apparatus, an alignment jig 50 is set, and in a probe disposing hole formed in a position facing opposite to a radiation thermometer 10, a light-sensitive probe 30 is provided. In this state, a light source 11 is lit to measure the intensity of the projection light from the light source 11 by a light receiving element 32 of the light-sensitive probe 30. This intensity of the projection light is stored in a memory 6. Next, the light-sensitive probe 30 is substituted by a reflection probe with its previously measured reflectance, and the intensity of the reflection light caused by the projection light from the light source 11 which is reflected by the reflection probe is measured by a light receiving element 12 of the radiation thermometer 10. From the intensity of the projection light and the reflectance of the reflection probe, a computing portion 4 derives proper intensity for the reflection light to be detected originally by the radiation thermometer 10. Then, the correspondence relation of the proper intensity of the reflected light to the intensity of the reflected light received actually by the light-receiving element 12 of the radiation thermometer 10 is stored in the memory 6 as a calibration data.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to a semiconductor wafer,
The present invention relates to a substrate processing apparatus for performing a heat treatment on a substrate while measuring the temperature of a glass substrate for a liquid crystal display device, a glass substrate for a photomask, a substrate for an optical disk, and the like (hereinafter, referred to as a “substrate”). It relates to calibration of a radiation thermometer used for measurement.

[0002]

2. Description of the Related Art In today's increasingly fine circuit pattern formed on a substrate, temperature control of the substrate when performing heat treatment on the substrate has become very important. For this reason, there is a substrate processing apparatus configured to install a radiation thermometer inside the apparatus, perform a heat treatment on the substrate while measuring the temperature of the substrate with the radiation thermometer, and manage the temperature of the substrate. Proposed.

Such an apparatus measures the temperature of a substrate in a non-contact manner by measuring radiation light from the substrate using a radiation thermometer. More specifically, the radiation thermometer obtains the temperature by measuring the intensity of the radiated light from the substrate using the relationship between the radiated light emitted from the substrate and the substrate temperature.

Therefore, it is necessary and important to calibrate the relationship between the intensity of radiation light from the substrate and the temperature detected by the radiation thermometer in advance. In general, such calibration is already performed by the radiation thermometer alone.However, when the radiation thermometer is incorporated in the substrate processing apparatus, the contamination of the light guide tube and the radiation light intensity are detected. The reliability of the temperature measurement of the substrate is lost due to the drift of the light receiving element. For this reason, it is necessary to perform calibration of the radiation thermometer in the substrate processing apparatus periodically or when necessary.

Conventionally, a calibration substrate embedded with a thermocouple and having a known emissivity is formed using a ceramic material or the like, and the calibration substrate is used in a radiation processing thermometer in a substrate processing apparatus. Calibration had been performed.

More specifically, a calibration substrate is set at a predetermined position (a position where an actual substrate is processed) in a substrate processing apparatus and heated, so that the calibration is performed from the temperature indicated by the thermocouple. The intensity of radiated light when the substrate for use is a black body is determined. The radiation light intensity actually emitted by the calibration substrate can be obtained by multiplying the radiation light intensity assuming that the substrate is a black body by the emissivity of the calibration substrate. The temperature which should be indicated by the radiation thermometer is obtained from the radiation light intensity actually emitted by the calibration substrate thus obtained. Then, calibration of the radiation thermometer can be performed by deriving the relationship between the actual indicated temperature of the radiation thermometer and the temperature that the radiation thermometer should originally indicate.

[0007]

In the calibration of the radiation thermometer as described above, the temperature indicated by the thermocouple may be different from the actual temperature of the calibration substrate. This is because repeated heating of the calibration substrate causes deterioration of the junction between the thermocouple and the ceramic material, etc., and lowers the reliability of the thermocouple indicated temperature.

In other words, conventionally, since calibration with heating is performed using a calibration substrate in which a thermocouple is embedded, there has been a problem that accuracy in calibration is lost.

The present invention has been made in view of the above problems, and has as its object to provide a substrate processing apparatus and a method for calibrating a radiation thermometer which can perform accurate calibration without heating. In addition, a jig used for calibration of the radiation thermometer is also proposed.

[0010]

According to one aspect of the present invention, there is provided a substrate processing apparatus for performing a heat treatment on a substrate while measuring a temperature of the substrate. A light source for irradiating light of a wavelength, a radiation thermometer provided with a light receiving element having sensitivity to the predetermined wavelength and outputting a signal corresponding to the amount of incident light, and (b) keeping the light source in a constant state. When emitting light, the irradiation light intensity obtained by receiving the irradiation light from the light source with a predetermined probe and reflecting the irradiation light from the light source on a predetermined reflection surface having a known reflection constant. Storage means for storing reflected light intensity obtained by receiving the reflected light generated by the light receiving element, and (c) proper reflection indicating an accurate intensity of the reflected light from the irradiation light intensity and the reflection constant. By obtaining the light intensity, the appropriate reflected light intensity and the light reception (D) when measuring the temperature of the substrate, the light intensity from the substrate obtained by the light receiving element is calibrated based on the correspondence. Temperature calculating means for deriving the temperature of the substrate based on the calibrated light intensity.

According to a second aspect of the present invention, a substrate is provided at a predetermined position of a reflection plate facing one surface of a substrate and measures the temperature of the substrate with a radiation thermometer including a light source and a light receiving element. In the substrate processing apparatus for performing the heat treatment, a jig used for calibration of the radiation thermometer, (a) a light detection probe for detecting the intensity of irradiation light of the irradiation light from the light source, (b) the light source A reflection probe provided with a reflection surface for reflecting the irradiation light from the light-receiving element toward the light-receiving element,
(c) a probe installation hole which is mounted at a predetermined position of the reflection plate, and which is capable of alternately inserting the light detection probe and the reflection probe at a position corresponding to a position where the radiation thermometer is provided, is formed. And an alignment jig.

According to a third aspect of the present invention, a substrate is provided at a predetermined position of a reflection plate facing one surface of the substrate and measures the temperature of the substrate with a radiation thermometer including a light source and a light receiving element. In the substrate processing apparatus for performing the heat treatment, a jig used for calibration of the radiation thermometer, (a) reflecting a part of the irradiation light from the light source toward the light receiving element, the other A partially reflecting probe for detecting the irradiation light intensity of irradiation light transmitted through the partially reflecting means, comprising: a partially reflecting means for transmitting the light; An alignment jig having a probe installation hole in which the partially reflective probe can be inserted at a position corresponding to the position where the thermometer is provided.

According to a fourth aspect of the present invention, in a substrate processing apparatus for performing a heat treatment on a substrate while measuring the temperature of the substrate with a radiation thermometer having a light source and a light receiving element, the radiation thermometer is calibrated. The method, (a) when the light source emits light in a predetermined state, a step of detecting the irradiation light from the light source with a predetermined probe different from the light receiving element and measuring the irradiation light intensity (B) the light source is
(a) When emitted in the same state as the step, the reflected light generated by reflecting the irradiation light from the light source on a predetermined reflecting surface having a known reflection constant is received by the light receiving element. Measuring the obtained reflected light intensity; and (c) obtaining an appropriate reflected light intensity indicating the intensity of the reflected light accurately from the irradiation light intensity and the reflection constant; and (d) the appropriate reflected light intensity. Determining the correspondence between the reflected light intensity obtained by the light receiving element and the reflected light intensity obtained by the light receiving element.

[0014]

DESCRIPTION OF THE PREFERRED EMBODIMENTS <1. Configuration of Substrate Processing Apparatus> FIG.
Is a substrate processing apparatus 100 according to an embodiment of the present invention.
FIG. 2 is a schematic vertical sectional view showing the configuration of FIG.

The substrate processing apparatus 100 includes a substrate W as a processing chamber.
, A lamp 24 for emitting light for heating the substrate W, and a radiation thermometer 10 for measuring the temperature of the substrate W. Then, the inside of the chamber 20 is set to a predetermined atmosphere in which a vacuum or a process gas flow is formed, and the substrate W is irradiated with light from the lamp 24 to perform a process involving heating, and the temperature of the substrate W is reduced. It is measured and managed by the radiation thermometer 10.

The radiation thermometer 10 is configured to measure the intensity of radiation emitted from the lower surface of the substrate W supported by the support member 29 in the chamber 20. The radiation thermometer 10 is connected to the temperature calculator 5, and the temperature calculator 5 calculates the temperature T of the substrate W. By controlling the power supplied to the lamp 24 by a control unit (not shown) based on the temperature T, a feedback control system is formed to maintain the substrate W at a predetermined temperature so as to make the temperature distribution of the substrate W uniform. You.

The lamp 24 is provided such that a plurality of rod-shaped lamps are covered with a lid 61 outside the chamber 20. The inner wall of the lid portion 61 is mirror-finished so as to reflect the light from the lamp 24 and efficiently heat the substrate W.

The chamber 20 is composed of a chamber wall 62 covering the lower part and the side periphery of the substrate W and a quartz window 22 covering the upper part of the substrate W. The quartz window 22 is located between the substrate W placed in the chamber 20 and the lamp 24, and serves as a window for transmitting light from the lamp 24. The chamber wall 62 is formed with a carry-in / out port 63 for carrying in / out the substrate W.
3 is provided with a door 23 which can be opened and closed freely.

The inner portion of the chamber wall 62 is also mirror-finished so as to reflect the light and efficiently heat the substrate W, and the surface facing the substrate W reflects the radiated light from the substrate W efficiently. Reflective surface 6 so that
Form 2E. Preferably, the reflecting surface 62E is set to have a size larger than the diameter of the substrate W.

Below the reflecting surface 62E, three lift portions 80 for raising and lowering the substrate W are provided (only two are shown in FIG. 1). As shown in FIG. 1, the lift section 80 has lift pins 81 that move up and down, and when the lift pins 81 are raised, the substrate W can be lifted from the support member 29. Substrate W is placed in chamber 20
When the wafer W is carried into the interior, first, the lift pins 81 rise and wait, and the hand 91 holding the substrate W is moved by the substrate processing apparatus 1.
The substrate W is placed on the lift pins 81 by entering from the outside and descending. After the hand 91 is retracted to the outside of the chamber 20, the substrate W is placed on the support member 29 by lowering the lift pins 81. When the door 23 closes the carry-in / out entrance 63, the inside of the chamber 20 is closed, and the heating process on the substrate W is started. On the other hand, the substrate W after the heat treatment is
When carrying out to the outside, an operation reverse to the above-described carrying-in operation is performed.

The support member 29 is configured to be rotatable around the center of the substrate W by a rotation driving means (not shown). The support member 29 supports the substrate W during the heating process on the substrate W. To maintain the uniformity of the in-plane temperature distribution of the substrate W.

Next, the configuration of the radiation thermometer 10 will be described. FIG. 2 shows a radiation thermometer 10 according to this embodiment.
FIG. 3 is a conceptual diagram illustrating an internal configuration of a temperature calculation unit 5. An opening 62H is provided in the reflection surface 62E of the chamber wall 62 facing the back surface of the substrate W, and the radiation thermometer 10 is inserted from below the opening 62H. Radiation thermometer 1
A light source 11, a light receiving element 12, and a light guide tube 13 are provided inside 0, and these are fixed inside a holder 14. The light source 11 is configured by, for example, an LED, a laser diode, or the like, and is turned on or off under the control of a light source driving unit 5b described later. The light guide tube 13 is formed of a material such as sapphire or quartz, and is a light receiving element that satisfactorily receives light emitted from the light source 11 reflected by the back surface of the substrate W, emitted light from the substrate W, and the like. 12
It is arranged to lead to. The upper end of the light guide tube 13 is located at substantially the same height as the reflecting surface 62E so as not to cause a non-uniform factor in the temperature of the substrate or the process gas flow during the heat treatment.

The light source 11 emits light of a predetermined wavelength λ that makes the substrate W opaque, and the light receiving element 12 has high sensitivity to light of the wavelength λ.

When the light source 11 is turned on, the light emitted from the light source 11 is reflected by the substrate W, and the reflected light from the substrate W is guided to the light receiving element 12.
On the other hand, when the light source 11 is turned off, only the radiation light from the substrate W is guided to the light receiving element 12.

The temperature calculating section 5 has a CPU and a memory therein, and the CPU functions as a measuring section 5a and a light source driving section 5b. The light source driving unit 5b includes the radiation thermometer 1
Lighting / extinguishing of the light source 11 of 0 is controlled. Also, the measuring unit 5
a is that the light intensity obtained from the light receiving element 12 is corrected based on the calibration data stored in the memory 6 in advance, and the temperature T of the substrate W is obtained by performing a predetermined calculation.
Ask for.

In order to accurately obtain the temperature T of the substrate W, it is necessary to prevent the light of the lamp 24 from being incident on the light receiving element 12. For this reason, in this embodiment, the radiation thermometer 10 is arranged at a position where the light emitted from the lamp 24 is blocked by the substrate W as shown in FIG. In order to measure the temperature T of the substrate W at multiple points, the radiation thermometer 10 and the temperature calculation unit 5 as described above may be provided at a plurality of locations. If the multipoint measurement is performed, the temperature distribution of the substrate W can be known.

Generally, between the temperature T of the black body and the radiant light intensity (radiant energy intensity) I of the black body,

[0028]

(Equation 1)

There is the following relationship. Equation 1 is called Planck's radiation formula, C1 and C2 are radiation constants, and λ is the wavelength of interest. Since the substrate W is not a black body, assuming that the emissivity of the substrate W is ε, when the temperature of the substrate W is not so high,
Equation 1 is

[0030]

(Equation 2)

It can be modified as follows. When the equation 2 is further modified, the equation for calculating the object temperature T from the radiated light intensity I is as follows.

[0032]

(Equation 3)

## EQU1 ## Here, a radiation thermometer sets the emissivity ε of the substrate W in advance, and obtains the temperature T of the object based on the relationship of Expression 3.

In order to measure the temperature of the substrate according to Equation 3, it is necessary to know the emissivity ε of the substrate. In general,
If there is no transmission when irradiating the object with light of a specific wavelength,
That is, if it becomes opaque to light of that wavelength, between the emissivity ε and reflectivity ρ of the object for that wavelength,

[0035]

(Equation 4)

The following relationship is established. This is also true for the substrate W. For example, when the substrate W is a silicon wafer, it is known that the substrate W becomes opaque in a wavelength region where the wavelength is 1 μm or less. By focusing on the wavelength region, the relationship of Expression 4 is established. Therefore, if the reflectance ρ of the substrate can be measured, the emissivity ε can be obtained, and as a result, the temperature T of the substrate W can be obtained based on Equation 3.

First, the light source 11 is turned on, and the light receiving element 12 detects the sum of the reflected light of the irradiation light from the light source 11 reflected by the substrate W and the radiated light from the substrate W. At this time, the light intensity detected by the light receiving element 12 is defined as I1.

Next, the light source 11 is turned off, and the light receiving element 12 detects only the multiple reflection light in which the radiation light from the substrate W is multiple reflected between the reflection surface 62E and the back surface of the substrate W. At this time, the light intensity detected by the light receiving element 12 is defined as I2.

Here, assuming that the change in the temperature and the change in the emissivity of the substrate W when the light source 11 is turned on and off are small and negligible, the difference between the light intensities I1 and I2, that is, (I1-I2) Is the intensity of the reflected light from the light source 11 reflected by the substrate W. And the light source 11
By measuring in advance the intensity of the light emitted from the light source 11 when a predetermined supply current is applied to the light source, the reflectance ρ of the substrate W can be obtained from the intensity of the reflected light.

Then, the emissivity ε of the substrate W is obtained from Equation 4, and the temperature T of the substrate W can be obtained by substituting the emissivity ε and the light intensity I 2 into Equation 3.

Here, in the radiation thermometer 10, as described above, the light intensity detected by the light receiving element 12 and the actual light intensity may be shifted due to the contamination of the light guide tube 13, the drift of the light receiving element 12, and the like. In order to prevent this deviation, calibration of the radiation thermometer is performed in advance periodically or as needed. Then, the calibration data obtained by the calibration is stored in the memory 6 functioning as a storage unit, and the measuring unit 5a corrects the light intensity obtained from the light receiving element 12 based on the calibration data (for example, The temperature T of the substrate W is obtained by performing a correction such as setting an offset value) to derive an appropriate light intensity and performing the above-described calculation.

Although not shown in FIG. 1, an arithmetic unit 4 for generating calibration data when calibrating the radiation thermometer 10 is further provided.
This will be described later.

Hereinafter, a jig used for calibrating the radiation thermometer 10 in the substrate processing apparatus 100 having the above-described configuration and an actual calibration method will be described.

<2. Jig Used for Calibrating Radiation Thermometer 10> First, FIG. 3 is a schematic diagram showing a light detection probe 30 for directly detecting the irradiation light intensity of the irradiation light from the light source 11 of the radiation thermometer 10. It is. The light detection probe 30 is provided with a lens 31 and a light receiving element 32.
5 fixed at a predetermined position. The light receiving element 32 is connected to a cable 38 for guiding an electric signal when detecting the intensity of the irradiation light to the operation unit 4 described later. The cable 38 is connected to a connector provided at a predetermined position in the chamber 20. (Not shown). In addition, the light receiving element 32 is configured by a Si photodiode or the like,
A device having high sensitivity in the same wavelength band as the light receiving element 12 provided in the radiation thermometer 10 is used.

The light detection probe 30 constructed as described above
Is installed so that the lens 31 faces the radiation thermometer 10 provided on the reflection surface 62E, so that the light source 11
Irradiating light can be directly received to detect the irradiating light intensity.

Next, FIG. 4 shows the light source 11 of the radiation thermometer 10.
FIG. 3 is a schematic diagram showing a reflection probe 40 for reflecting the irradiation light of FIG. 1 and guiding the reflected light to the light receiving element 12 of the radiation thermometer 10. The reflection probe 40 is provided with a mirror 41 having a reflection surface formed in a concave shape, and the mirror 41 is fixed at a predetermined position by a case 45. The outer shape of the reflection probe 40 is the light detection probe 3
0 is formed in substantially the same shape.

The reflection probe 40 thus configured
Is installed so that the mirror 41 faces the radiation thermometer 10 provided on the reflection surface 62E, so that the light source 11
The reflected light reflected by the reflecting surface of the mirror 41 can be guided to the light receiving element 12 satisfactorily. As a result, the light receiving element 12 of the radiation thermometer 10 can detect the intensity of the irradiation light emitted by the light source 11 as the reflected light intensity.

Both the light detection probe 30 and the reflection probe 40 described above need to be appropriately installed at positions facing the radiation thermometer 10. Therefore, in this embodiment, an alignment jig is used in addition to the light detection probe 30 and the reflection probe 40 described above.

FIG. 5 is a schematic diagram showing a side cross section of the alignment jig 50. The alignment jig is formed with three protrusions 51 (only two are shown in FIG. 5), and these protrusions 51 fit into holes in which the lift pins 81 formed on the reflection surface 62E move up and down. As a result, the alignment jig 50 is positioned at a predetermined position in the chamber 20. A probe installation hole 53 for inserting the light detection probe 30 and the reflection probe 40 is provided at a position corresponding to the radiation thermometer 10 of the alignment jig 50. Such an alignment jig 50 is placed in the chamber 2 of the substrate processing apparatus 100.
When set within 0, the state shown in FIG. 6 is obtained. In the alignment jig 50 set at a predetermined position in the chamber 20 as shown in FIG. 6, if the light detection probe 30 and the reflection probe 40 are inserted alternately into the probe installation holes 53, the light detection probe 30 Both the probe 40 and the probe 40 can be appropriately installed at a predetermined position facing the radiation thermometer 10.

In this embodiment, the light detection probe 30, the reflection probe 40 and the alignment jig 5
A case where the calibration of the radiation thermometer 10 is performed by using 0 will be described as an example.

<3. Calibration Method> The concept of calibration of the radiation thermometer 10 in this embodiment will be described.

First, the alignment jig 50 is placed in the chamber 2
After being set to 0, the light detection probe 30 is inserted into the probe installation hole 53. Then, the cable 38 from the light detection probe 30 is connected to a predetermined connector in the chamber 20.

FIG. 7 is a block diagram when the light detection probe 30 is installed. The cable 38 is connected to the operation unit 4 configured by a CPU or the like via a connector in the chamber 20. In this state, the light source driving unit 5b of the temperature calculation unit 5 supplies a predetermined supply current to the light source 11 to turn on the light source 11. Irradiation light emitted from the light source 11 is guided to the light detection probe 30 via the light guide tube 13. Then, the irradiation light emitted from the light guide tube 13 enters the light receiving element 32 via the lens 31. The light receiving element 32 performs photoelectric conversion and generates an electric signal corresponding to the intensity of the received irradiation light. The calculation unit 4 includes the light receiving element 3
Input the intensity of the irradiation light obtained from
Store in. At this time, the light source driving unit 5b
The supply current given to 1 is also stored in the memory 6.

Then, the light detection probe 30 installed on the alignment jig 50 is removed, and the reflection probe 40 is inserted into the probe installation hole 53.

FIG. 8 is a block diagram when the reflection probe 40 is installed. In this state, the light source driving unit 5b of the temperature calculation unit 5
The same supply current as in the case (1) is applied to light the light source 11. Irradiation light emitted from the light source 11 is guided to the reflection probe 40 via the light guide tube 13. The irradiation light emitted from the light guide tube 13 is reflected by a mirror 41 provided on the reflection probe 40. The light reflected by the mirror 41 enters the light guide tube 13 again and enters the light receiving element 12. The light receiving element 12 performs photoelectric conversion and generates an electric signal corresponding to the intensity of the received reflected light. This reflected light intensity is measured by the measuring unit 5a of the temperature calculating unit 5.
And is temporarily stored in the memory 6.

In this state, the memory 6 stores the irradiation light intensity detected by the light detecting probe 30 when the light source 11 is turned on and the reflected light intensity detected by the light receiving element 12 of the radiation thermometer 10. Will be.

Here, if the reflection constant (the ratio between the irradiation light and the reflected light) of the reflection probe 40 is known in advance, the radiation thermometer 1 should be used based on the irradiation light intensity detected by the light detection probe 30.
The appropriate reflected light intensity to be received by the 0 light receiving element 12 can be obtained. Then, the difference between the appropriate reflected light intensity and the reflected light intensity actually received by the light receiving element 12 of the radiation thermometer 10 is an error caused by contamination of the light guide tube 13, drift of the light receiving element 12, and the like.

Accordingly, the calculating section 4 obtains an appropriate reflected light intensity indicating an accurate reflected light intensity from the irradiation light intensity and the reflection constant of the reflection probe 40, and calculates the appropriate reflected light intensity and the light receiving element of the radiation thermometer 10. The corresponding relationship with the intensity of the reflected light detected by the memory 12 is obtained as calibration data in the memory 6.
If the measurement unit 5a is stored in the
Can correct the light intensity obtained by the light receiving element 12 based on the calibration data, and the reliability of the temperature measurement of the substrate can be kept high.

In the following, a specific method for performing such a calibration will be described with reference to flowcharts. FIG. 9 is a flowchart showing a sequence for performing calibration of the radiation thermometer 10 in this embodiment.

First, calibration of the reference radiation thermometer is performed in step S1. What is a reference radiation thermometer?
This serves as a reference for calibrating the radiation thermometer 10, and is structurally the same as the radiation thermometer 10. This reference radiation thermometer is provided with a reflection probe 40.
Is used to determine the reflection constant of The calibration of the reference radiation thermometer is performed by the reference radiation thermometer alone using a blackbody furnace or a device that generates a blackbody radiation spectrum.

Next, in step S2, the alignment jig 50 is set in the chamber 20 of the substrate processing apparatus 100. This results in the state as shown in FIG.

Next, the reflection constant of the mirror 41 of the reflection probe 40 is determined using the reference radiation thermometer that has been calibrated in step S3. Specifically, the reflection constant of the reflection probe 40 is determined by the following procedure.

The reference radiation thermometer is mounted in the chamber 20 at the position where the radiation thermometer 10 is mounted, and the light detection probe 30 is inserted into the probe installation hole 53 of the alignment jig 50. As a result, the state shown in FIG. 7 is obtained. In this case, the radiation thermometer 10 is a reference radiation thermometer. Then, in this state, the light source of the reference radiation thermometer is turned on, and the irradiation light intensity from the light source detected by the light detection probe 30 is temporarily stored in the memory 6. The irradiation light intensity at this time is defined as Ia.

Subsequently, the light detection probe 30 is removed from the alignment jig 50, and the reflection probe 40 is inserted into the probe installation hole 53. As a result, the state shown in FIG. 8 is obtained, but also in this case, the radiation thermometer 10 is a reference radiation thermometer. Then, in this state, the light source of the reference radiation thermometer is turned on, and the light reflected by the mirror 41 of the reflection probe 40 is detected by the light receiving element of the reference radiation thermometer. Then, the reflected light intensity detected by the reference radiation thermometer is temporarily stored in the memory 6. The irradiation light intensity at this time is defined as Ib.

Since the reference radiation thermometer has already been calibrated in step S1, the light intensity detected by the light receiving element of the reference radiation thermometer is considered to be an accurate value. Therefore, based on the irradiation light intensity Ia detected using the light detection probe 30 and the reflection light intensity Ib detected using the reflection probe 40, the reflection constant k of the reflection probe 40 becomes

[0066]

(Equation 5)

Can be expressed as The operation unit 4 includes a memory 6
The illumination light intensity Ia and the reflected light intensity Ib temporarily stored in the reflection probe 4 are read out, and the calculation of Expression 5 is performed.
The reflection constant k of 0 is stored in the memory 6. Thus, the processing of step S3 is performed, and the reflection constant k of the reflection probe 40 is obtained.

When the reflection constant k of the reflection probe 40 is obtained, the reference radiation thermometer attached to the chamber 20 is removed, and the radiation thermometer 10 to be actually calibrated is attached.

The processing up to this point is the actual radiation thermometer 10
Is a procedure that is performed in advance to perform the calibration of the radiation thermometer 10.
Is the calibration process. Therefore, when the reflection constant of the used reflection probe 40 has already been obtained, it is not necessary to perform the processing of steps S1 to S3.

In step S 4, the alignment jig 50 is set in the chamber 20, and the light detection probe 30 is inserted into the probe installation hole 53 formed at a position facing the radiation thermometer 10. As a result, a state as shown in FIG. 7 is obtained.

Then, the light source 11 of the radiation thermometer 10 is turned on, and the irradiation light intensity I3 detected by the light receiving element 32 of the light detection probe 30 is measured (step S5). And
The measured irradiation light intensity I3 and the light source driving unit 5b
The relationship with the supplied current for 1 is temporarily stored in the memory 6 (step S6).

Next, in step S7, the light detection probe 30 is removed from the alignment jig 50, and the reflection probe 40 is inserted into the probe installation hole 53. As a result, a state as shown in FIG. 8 is obtained.

Then, the light source driving section 5b is connected to the radiation thermometer 10
The light source 11 is turned on by supplying the same supply current to the light source 11 as in step S5, and the reflected light intensity I4 reflected by the mirror 41 of the reflection probe 40 is applied.
Is measured by the light receiving element 12 of the radiation thermometer 10 (step S8). The reflected light intensity I4 obtained at this time is temporarily stored in the memory 6.

Then, in step S9, the operation unit 4
Reads the irradiation light intensity I3 and the reflection constant k of the reflection probe 40 from the memory 6, and obtains an appropriate reflected light intensity I40 indicating the accurate reflected light intensity from these. Specifically, the appropriate reflected light intensity I40 is given by

[0075]

(Equation 6)

Is obtained by

Then, in step S10, the calculating section 4 obtains the correspondence between the appropriate reflected light intensity I40 obtained in step S9 and the reflected light intensity I4 actually detected by the light receiving element 12 of the radiation thermometer 10. It is stored in the memory 6 as calibration data.

As described above, the correspondence between the appropriate reflected light intensity I40 and the actually detected reflected light intensity I4 is stored in the memory 6 as calibration data.
When measuring the temperature of the substrate W during the heat treatment on the substrate W, the light intensity detected by the light receiving element 12 of the radiation thermometer 10 is adjusted to an appropriate light intensity based on the calibration data stored in the memory 6. The correction can be performed, and the reliability of the temperature T of the substrate W obtained as a measurement result is improved.

As described above, in the method of calibrating the radiation thermometer 10 of this embodiment, the light intensity I3 from the light source 11 is measured by the light detection probe 30 different from the light receiving element 12 of the radiation thermometer 10. Then, the irradiation light intensity I3 and the reflection constant k of the reflection probe 40 obtained in advance are determined.
Thus, since the appropriate reflected light intensity I40 that the light receiving element 12 of the radiation thermometer 10 should originally detect is determined, the radiation thermometer 1
0 light guide tube 13 is dirty or light receiving element 1
Even when 2 drifts, the calibration of the radiation thermometer 10 can be accurately performed.

In this embodiment, the chamber 20
Since the calibration of the radiation thermometer 10 can be performed without heating the inside, the reliability of the calibration does not decrease.

<4. Modified Example> In the above-described embodiment, an example has been described in which the irradiation light intensity is detected by the light detection probe 30 having the light receiving element 32 provided therein, but the present invention is not limited to this. For example, FIG.
FIG. 9 is a schematic diagram showing a modification of the light detection probe 30. As shown in FIG.
5 has a shape that can be inserted into the probe installation hole 53 of the alignment jig 50, and an optical fiber 39 is inserted into the case 35. Then, an optical connector is provided in the chamber 20, and a light receiving element for receiving light incident from the optical connector is provided. With this configuration,
When one end of the optical fiber 39 is connected to an optical connector provided in the chamber 20, almost the same configuration as that of FIG. 7 described above is established. Therefore, the light detection probe 30 only needs to be configured to be able to directly receive the irradiation light emitted by the light source 11 of the radiation thermometer 10 and detect the irradiation light intensity.

In the above embodiment, the radiation thermometer 1
In the calibration of zero, an example is described in which the light detection probe 30 and the reflection probe 40 are configured separately from each other, but the light detection probe 30 and the reflection probe 40 are integrally configured. You may. For example, FIG.
FIG. 2 is a schematic view showing partially reflective probes 70a and 70b having both functions of a reflective probe 40 and a reflective probe 40;

First, the partially reflective probe 70a shown in FIG. 11A is provided with a lens 71a, a light receiving element 72a, and a half mirror 73a.
The light receiving element 72a and the half mirror 73a are
a fixed at a predetermined position. The light receiving element 72a is connected to a cable 78a for guiding an electric signal when detecting the intensity of the irradiation light to the arithmetic unit 4 (see FIG. 7). The cable 78a is provided at a predetermined position in the chamber 20. Connected to the connector. In the partially reflecting probe 70a configured as described above, the half mirror 73a is installed so as to face the radiation thermometer 10, so that part of the irradiation light from the light source 11 is reflected by the half mirror 73a. While being guided to the light receiving element 12 of the radiation thermometer 10, other irradiation light passes through the half mirror 73a and passes through the lens 71a to the light receiving element 72.
a. Even when the partially reflective probe 70a configured as described above is used, the reflection constant reflected by the half mirror 73a, the irradiation light intensity obtained by the light receiving element 72a, and the reflection obtained by the light receiving element 12 of the radiation thermometer 10. Calibration of the radiation thermometer 10 can be performed using the relationship with the light intensity.

Next, the partially reflective probe 70b shown in FIG. 11B includes a half mirror 73b and an optical fiber 79b in a case 75b. And chamber 2
An optical connector is provided within the optical connector and a light receiving element for receiving light incident from the optical connector is provided. In such a configuration, when one end of the optical fiber 79b is connected to an optical connector provided in the chamber 20, the intensity of light emitted from the light source 11 can be measured. In the partially reflecting probe 70b configured as described above, the half mirror 73b
Is installed so as to face the radiation thermometer 10 so that a part of the irradiation light from the light source 11
And is guided to the light receiving element 12 of the radiation thermometer 10 while the other irradiation light is reflected by the half mirror 73b.
Through the optical fiber 79b to the light receiving element provided in the chamber 20. Even when the partially reflecting probe 70b configured as described above is used, the reflection constant reflected by the half mirror 73b, the irradiation light intensity obtained via the optical fiber 79b, and the light receiving element 12 of the radiation thermometer 10
Thermometer 10 using the relationship with the reflected light intensity obtained in
Calibration can be performed. Also, the half mirror can obtain the same effect by providing an opening in a part of the mirror.

The partially reflective probes 70a, 70
If 0b is used, it is not necessary to replace the probe during the calibration sequence, so that the radiation thermometer can be efficiently calibrated.

Further, in the above embodiment, the block configuration in which the calculation unit 4 and the temperature calculation unit 5 are separate has been described. However, the CPU in the temperature calculation unit 5 functions as the calculation unit 4. Needless to say, there may be.

Further, in the method of calibrating the radiation thermometer 10 in the substrate processing apparatus 100 described in the above embodiment, when the temperature of the substrate W is actually measured, the radiation emitted from the substrate W It is needless to say that even if the temperature is measured using the multiple reflection effect of multiple reflection between the back surface and the reflection surface 62E, it can be applied without any problem.

[0088]

As described above, according to the first aspect of the present invention, when the light source of the radiation thermometer is made to emit light in a constant state, the irradiation light from the light source is received by the predetermined probe. Of reflected light obtained by receiving the reflected light generated by reflecting the irradiated light from the light source on a predetermined reflecting surface having a known reflection constant with the light receiving element of the radiation thermometer The intensity is temporarily stored, and the calculating means obtains an appropriate reflected light intensity indicating an accurate original reflected light intensity from the irradiation light intensity and the reflection constant, and calculates the appropriate reflected light intensity and the reflection detected by the radiation thermometer. Find the correspondence with the light intensity. Then, when measuring the temperature of the substrate, the light intensity from the substrate obtained by the light receiving element of the radiation thermometer is calibrated based on the correspondence obtained by the calculation means to derive the temperature of the substrate. The calibration of the radiation thermometer can be accurately performed without the need, and the reliability of the substrate temperature obtained by the temperature calculation unit can be improved.

When the jig according to the second aspect of the present invention is used, the radiation thermometer can be accurately calibrated without heating when calibrating the radiation thermometer.

When the jig according to the third aspect of the present invention is used, the radiation thermometer can be calibrated accurately without heating when calibrating the radiation thermometer, and can be efficiently performed. Calibration of the radiation thermometer can be performed.

According to the fourth aspect of the present invention, when the light source of the radiation thermometer emits light in a predetermined state, the irradiation light from the light source is detected by a predetermined probe to measure the irradiation light intensity. In addition, when the light source emits light in the same state, the reflected light generated by reflecting the irradiation light from the light source on a predetermined reflecting surface having a known reflection constant is received by the light receiving element of the radiation thermometer. After measuring the reflected light intensity obtained from the measurement, the appropriate reflected light intensity, which indicates the exact intensity of the original reflected light, is obtained from the irradiation light intensity and the reflection constant, and the appropriate reflected light intensity and the light receiving element of the radiation thermometer are used. Since the calibration of the radiation thermometer is performed by obtaining the corresponding relationship with the obtained reflected light intensity, the calibration of the radiation thermometer can be performed accurately without heating.

[Brief description of the drawings]

FIG. 1 is a schematic vertical sectional view showing a configuration of a substrate processing apparatus according to an embodiment of the present invention.

FIG. 2 is a conceptual diagram showing an internal configuration of a radiation thermometer and a temperature calculation unit according to the embodiment.

FIG. 3 is a schematic diagram showing a light detection probe in this embodiment.

FIG. 4 is a schematic view showing a reflection probe in this embodiment.

FIG. 5 is a schematic diagram showing a side cross section of the alignment jig in this embodiment.

FIG. 6 is a view showing a state where an alignment jig is set in a chamber of the substrate processing apparatus.

FIG. 7 is a block diagram when a light detection probe is installed.

FIG. 8 is a block diagram when a reflection probe is installed.

FIG. 9 is a flowchart showing a procedure for calibrating the radiation thermometer in this embodiment.

FIG. 10 is a schematic view showing a modification of the light detection probe.

FIG. 11 is a schematic view showing a partially reflective probe.

[Explanation of symbols]

 Reference Signs List 4 calculation unit (calculation unit) 5 temperature calculation unit (temperature calculation unit) 5a measurement unit 5b light source drive unit 6 memory (storage unit) 10 radiation thermometer 11 light source 12 light receiving element 13 light guide tube 20 chamber 30 light detection probe 40 reflection Probe 50 Alignment jig 70a, 70b Partially reflective probe

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Mitsuhiro Masuda 4-chome Tenjin Kitamachi 1-chome, Horikawa-dori Teranouchi, Kamigyo-ku, Kyoto F-term (reference) 2G065 AA04 AB22 AB26 BC07 BC33 BC35 DA01 2G066 AB02 BC15 CB01 4M106 AA01 AA09 BA04 CA70 DH02 DH12 DH13 DH32 DH40 DJ32

Claims (4)

[Claims] An apparatus for performing a heat treatment on a substrate while measuring the temperature of the substrate, comprising: (a) a light source for irradiating light of a predetermined wavelength, a light source having sensitivity to the predetermined wavelength, and A radiation thermometer provided with a light-receiving element that outputs a signal obtained by: (b) When the light source emits light in a constant state, the irradiation light from the light source is received by a predetermined probe. A memory for storing an irradiation light intensity and a reflection light intensity obtained by receiving the reflection light generated by reflecting the irradiation light from the light source on a predetermined reflection surface having a known reflection constant by the light receiving element. Means, (c) by obtaining an appropriate reflected light intensity indicating the intensity of the reflected light accurately from the irradiation light intensity and the reflection constant,
Calculating means for determining the correspondence between the appropriate reflected light intensity and the reflected light intensity obtained by the light receiving element; (d) when measuring the temperature of the substrate, the light intensity from the substrate obtained by the light receiving element Is calibrated based on the correspondence,
And a temperature calculating means for deriving the temperature of the substrate based on the calibrated light intensity. 2. A substrate processing apparatus which is provided at a predetermined position of a reflection plate facing one surface of a substrate and performs heat treatment on the substrate while measuring the temperature of the substrate with a radiation thermometer including a light source and a light receiving element. A jig used for calibration of the radiation thermometer, comprising: (a) a light detection probe for detecting irradiation light intensity of irradiation light from the light source; and (b) receiving the irradiation light from the light source. A reflection probe provided with a reflection surface for reflecting the light toward the element; (c) the light detection probe and the reflection light mounted at a predetermined position of the reflection plate, and at a position corresponding to a position where the radiation thermometer is provided. A jig for use in calibrating a radiation thermometer of a substrate processing apparatus, comprising: an alignment jig having a probe installation hole into which a probe can be inserted alternately. 3. A substrate processing apparatus which is provided at a predetermined position of a reflection plate facing one surface of a substrate and performs a heat treatment on the substrate while measuring the temperature of the substrate with a radiation thermometer including a light source and a light receiving element. A jig used for calibration of the radiation thermometer, (a) reflecting a part of the irradiation light from the light source toward the light receiving element, and partially reflecting means for transmitting the other A partially reflective probe for detecting the intensity of irradiation light of the irradiation light transmitted through the partially reflecting means, and (b) a position mounted on a predetermined position of the reflection plate and provided with the radiation thermometer. And a jig for calibrating a radiation thermometer of the substrate processing apparatus, the alignment jig having a probe installation hole in which the partially reflective probe can be inserted. Utensils. 4. A method for calibrating a radiation thermometer in a substrate processing apparatus for performing heat treatment on a substrate while measuring the temperature of the substrate with a radiation thermometer including a light source and a light receiving element, comprising: When the light source emits light in a predetermined state, a step of detecting irradiation light from the light source with a predetermined probe different from the light receiving element and measuring irradiation light intensity, (b) the light source When light is emitted in the same state as in the step (a), reflected light generated by reflecting the irradiation light from the light source on a predetermined reflecting surface having a known reflection constant is received by the light receiving element. Measuring the reflected light intensity obtained by: (c) obtaining an appropriate reflected light intensity indicating the accurate intensity of the reflected light from the irradiation light intensity and the reflection constant; and (d) the proper reflected light intensity. Intensity and the intensity of the reflected light obtained by the light receiving element Characterized in that it and a step of obtaining the correspondence between the calibration method of the radiation thermometer.