JP2000109980A - Manufacture of semi-conductor device, and device used for its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To remove an organic film deposited on a wafer side wall by generating a plasma containing oxygen between a side wall of a susceptor and an electrode for generating the plasma on a side wall of a film forming chamber as electrodes opposite to each other. SOLUTION: A plasma containing oxygen is generated between a side wall of a susceptor 4 and an electrode 6 for generating the plasma with the side wall of the susceptor 4 and the electrode 6 for generating the plasma on a side wall of a film forming chamber box 1 as counter electrodes, and an organic film to be deposited on the wafer side wall is removed. The electrodes opposite to each other are preferably installed between the side wall of the film forming chamber 1 and the side wall of the susceptor 4, or between the wafer bottom surface and a bottom surface of a film forming device. O2, NO and N2O are used as a gas to be introduced to realize the plasma atmosphere containing O2, and O2 gas is especially preferable. A film formed of poly (p-xylylene), poly (chloro-p-xylylene), α, α', α'', α''' poly (tetra fluoro-p-xylylene) is used for the organic film to be formed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for forming an organic insulating film, removing the organic insulating film partially, and preventing the film from peeling off.

[0002]

2. Description of the Related Art In the field of manufacturing ICs, as devices become more highly integrated, miniaturization of devices in the horizontal direction in accordance with the scaling law is progressing. Along with this, the wiring width and the wiring interval are also being reduced. When the wiring interval is reduced, the parasitic capacitance between the wirings increases in inverse proportion to the wiring interval. This increase in the capacitance between the wirings increases the RC time constant, causes a delay in the signal propagation speed of the wirings, and causes a reduction in the processing speed of the device. Therefore, this is a major problem in miniaturizing the device.

As one of the methods for reducing the capacitance between wirings, formation of an insulating film having a lower dielectric constant than a SiO ₂ film conventionally used as an interlayer insulating film has been studied. As a typical low dielectric constant interlayer insulating film, there is a SiOF film obtained by adding fluorine to a SiO ₂ film. In this case, the relative dielectric constant can be reduced from about 3.9 or more of the SiO ₂ film to about 3.5.

However, in recent years, films having a lower relative dielectric constant have been demanded, and inorganic or organic coating films such as HSQ and BCB, fluorinated amorphous carbon films,
Organic film C including (p-xylylene) (parylene) etc.
VD and the like have been reported.

[0005]

Poly (p-xylylene), which is one type of organic film CVD, has very good step coverage when formed by thermal CVD using an apparatus as shown in FIG. Therefore, when the film is formed on the wafer, the film is formed conformally also on the side wall of the wafer as shown in FIG.

An organic film generally has a hardness of SiO _2.
Lower and easier to damage than membranes. For this reason, when a film is formed on the side wall of the wafer as described above, there is a concern that the film may be scratched or peeled off when coming into contact with a wafer carrier or the like, thereby causing dust to be generated.

In order to solve this problem, a method of covering the whole by depositing SiO ₂ as a cap film of a poly (p-xylylene) film is considered. However, plasma CVD
SiO ₂ film by the order of poly (p- xylylene) poor step coverage than films, can not become completely covered up wafer sidewall.

[0008] Further, if a film is prevented from being formed around the wafer by a ring chuck, the generation of dust due to peeling of the film deposited on the ring chuck becomes a problem.

Furthermore, when performing a chamber cleaning by O ₂ plasma, the shower head - to generate an O ₂ plasma between the susceptor, but the film deposited on the susceptor upper surface is easily removed, film deposited on the susceptor side wall The etch rate is slow and difficult to remove, and peeling of the film causes dust. Therefore, it is necessary to efficiently remove the poly (p-xylylene) film deposited on the susceptor side wall.

For this reason, it has been considered difficult to use a poly (p-xylylene) film as a low dielectric constant interlayer insulating film in a semiconductor device. To overcome this, it is necessary to remove the sidewall film immediately after film formation. Is required.

An object of the present invention is to provide a method of forming an interlayer insulating film which does not cause film peeling at a side wall of a wafer when an interlayer insulating film is formed by organic film CVD in a semiconductor manufacturing apparatus.

[0012]

SUMMARY OF THE INVENTION An apparatus for manufacturing a semiconductor device according to the present invention has an object to remove an organic film deposited on an edge of a wafer. Install the counter electrode,
A plasma atmosphere containing O is generated using the counter electrode,
The organic film deposited on the edge of the wafer is removed.

As a further means, after an organic film is formed in the same film forming chamber by using an organic film CVD apparatus having a counter electrode for plasma generation, the organic film is removed from the edge of the wafer. It is characterized by doing.

[0014]

DESCRIPTION OF THE PREFERRED EMBODIMENTS According to the present invention, after an organic film is formed in a CVD apparatus, the organic film is removed only at the wafer end by exposing the wafer end to a plasma atmosphere containing O immediately after the organic film is formed. Scratches and film peeling due to contact with the substrate.

The above-mentioned removing step can be usually performed in the same film-forming chamber following or simultaneously with the film-forming step. In addition,
Cluster tools (equipment with multiple chambers)
A dedicated chamber may be prepared for peripheral removal.

The organic film formed by the above-mentioned CVD method is not particularly limited as long as it is a film containing C which can be removed by O ₂ plasma, but the organic film shown in the following (1) to (5) is used. (p-
Xylylene) (parylene N): (2) or a derivative thereof (general formula: (1), poly (chloro-p-xylylene) ((3): parylene C,
(4): Parylene D), (5): α, α ', α ", α'" poly (tetrafluoro-p-xylylene) (parylene AF4) or the like, or a fluorinated amorphous carbon film is used. Preferably, a poly (p-xylylene) film is particularly used. a): poly (p-xylylene) derivative and b): raw material di-p-xylylene derivative

[0017]

Embedded image (1) General formula (X is hydrogen or halogen)

[0018]

Embedded image (2) a): poly (p-xylylene) (parylene N) and b):
Raw material di-p-xylylene

[0019]

Embedded image (3) a): poly (monochloro-p-xylylene) (parylene C) and b): raw material di- (monochloro-p-xylylene)

[0020]

Embedded image (4) a): poly (dichloro-p-xylylene) (parylene D)
And b): Raw material di- (dichloro-p-xylylene)

[0021]

Embedded image (5) a): α, α ', α ", α'"-poly (tetrafluoro-p-
Xylylene) (parylene AF4) and b): starting di-α, α ',
α ", α '"-(tetrafluoro-p-xylylene) Hereinafter, unless otherwise specified, the case of forming a film of poly (p-xylylene) or a derivative thereof will be described.

The position of the counter electrode for generating the above-mentioned plasma is not particularly limited, but is preferably set between the side wall of the film forming chamber and the side wall of the susceptor or between the bottom of the wafer and the bottom of the film forming apparatus. By setting the installation position of the electrode as described above, when removing the organic film around the wafer,
At the same time, the organic film formed on the susceptor and around the susceptor is also removed at the same time.Thus, even if the film is continuously formed, a thick organic film is not deposited, and dust is generated due to peeling of the organic film. Can be suppressed.

O ₂ , NO, and N ₂ O are preferably used as a gas to be introduced for realizing a plasma atmosphere containing O, and O ₂ gas is particularly preferable.

The film forming conditions when the poly (p-xylylene) film forming apparatus shown in FIG. 3 is used are as follows.

The temperature of the source vessel (2) is preferably 100
° C to 300 ° C, more preferably 150 ° C to 200 ° C, the temperature of the pyrolysis furnace (3) is preferably 500 ° C to 800 ° C, more preferably 600 ° C to 700 ° C, and the temperature of the susceptor (4) is preferably- 50 ° C to 50 ° C, more preferably -25
0 ° C. to 0 ° C., and the film forming pressure is preferably 0.01 torr to 50 ton.
rr, more preferably 0.1 Torr to 0.5 Torr, and the thickness of the poly (p-xylylene) film is preferably 50 nm to 1500 n.
m, more preferably 100 nm to 500 nm.

Next, conditions for generating O ₂ plasma in the same film forming chamber and thereby removing the susceptor, the side wall of the wafer and the poly (p-xylylene) film on the periphery are as follows.

The susceptor and the side wall of the film forming chamber are used as counter electrodes.

The RF power is preferably between 50 W and 2000
W, more preferably from 100 W to 500 W, and the pressure is preferably from 0.11 Torr to 10 Torr, more preferably 0.1 Torr.
~ 0.5 Torr.

The O ₂ plasma is generated between the susceptor side wall (6) and the film forming chamber side wall or at the bottom of the wafer.
(6)-It is preferable to be between the bottoms of the film forming chamber.

Hereinafter, the case of forming a fluorinated amorphous carbon film will be described focusing on the difference from poly (p-xylylene) or a derivative thereof.

As a film forming apparatus in this case, PE-CVD of a parallel plate type plasma source or HDPCVD using helicon wave high density plasma is used. The film formation temperature may be heated from room temperature to about 300 ° C. depending on the apparatus configuration.

The raw material for the fluorinated amorphous carbon film
Is CF_x(CF_Four, C_TwoF₆, C_ThreeF ₈Etc.) and CH_x(CH
_Four, C_TwoH₆, C_TwoH_FourEtc.), and for dilution
N_TwoAnd Ar are used.

The components of the formed film are C, H and F
Indicates the properties as an amorphous film. The relative permittivity is about 2.5 or higher. It is similar to poly (p-xylylene) or a derivative thereof that is easily etched by O ₂ plasma.

[0034]

[Embodiment 1] Embodiment 1 of the present invention will be described below. Using a poly (p-xylylene) film forming apparatus shown in FIG.
Source container (2) temperature 200 ° C, pyrolysis furnace (3) temperature 6
50 ° C., temperature of susceptor (4) −20 ° C., deposition pressure 0.1T
Orr and di-p-xylylene were supplied at a rate of 20 sccm, and a poly (p-xylylene) film was formed on a silicon substrate (5) to a thickness of 500 nm.
Form a film. Next, in the same deposition chamber, the RF power was 100 W and the O ₂ flow
O ₂ plasma is generated between the susceptor side wall (6) and the film forming chamber side wall under the conditions of 100 sccm and 0.1 Torr. As a result, the susceptor, the side wall of the wafer, and the peripheral poly (p-xylylene) film are removed.

As a result of the experiment, poly (p-xylylene) on the substrate
The film was formed well, and the poly (p-xylylene) film was effectively removed at the edge of the wafer, so that scratches and film peeling due to contact with a wafer carrier or the like could be suppressed.

Embodiment 2 Hereinafter, Embodiment 2 of the present invention will be described. Here, O ₂ plasma was generated not between the susceptor side wall and the film forming chamber side wall, but between the wafer bottom (6) and the film forming chamber bottom, and poly (p-xylylene) film formation and peripheral removal were simultaneously performed. Using the apparatus shown in FIG. 4, a poly (p-xylylene) film is formed to a thickness of 500 nm under the same conditions as in the first embodiment. On this occasion,
50 sccm of O ₂ from susceptor side wall with RW power of 100 W
At the same time, the poly (p-xylylene) film around the wafer was removed.

As a result of the experiment, it was possible to effectively perform film formation, film removal, and suppression of scratches and film peeling, as in Example 1.

[0038]

The first effect is as follows: scratches around the wafer,
Suppression of film peeling.

The reason is that only the side wall and peripheral portion of the wafer are O
_{(2) By} exposing the organic film by exposing to plasma, it is possible to prevent the occurrence of scratches and film peeling when coming into contact with the wafer carrier.

The second effect is that the organic film formed on the susceptor is prevented from peeling.

The reason is that when the organic film around the wafer is removed, the organic film formed on the susceptor and around the susceptor is also removed at the same time. Is not deposited, and generation of dust due to peeling can be suppressed.

[Brief description of the drawings]

FIG. 1 is an explanatory diagram of a conventional example.

FIG. 2 is an enlarged view of a film forming portion of a conventional example.

FIG. 3 is an explanatory diagram of the first embodiment of the present invention.

FIG. 4 is an explanatory diagram of a second embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Deposition chamber housing 2 Bottle of di-p-xylylene 3 Pyrolysis furnace for cracking of di-p-xylylene 4 Susceptor 5 Silicon substrate 6 Electrode for plasma generation 7 RF oscillator 8 Turbo pump for exhaust 9 Dry pump for exhaust 10 Poly (p-xylylene) film

────────────────────────────────────────────────── ───

[Procedure amendment]

[Submission date] November 29, 1999 (1999.11.
29)

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Claims

[Correction method] Change

[Correction contents]

[Claims]

Wherein same deposition claim 1 or method according to claim 2, wherein the room in and performing the organic film removing said wafer and deposition of the organic film of the CVD apparatus.

4. A process according to claim 3 semiconductor device according conducted the deposition and the organic layer is removed of the wafer bottom of the organic layer at the same time.

Characterized in that wherein said organic film is a poly (p- xylylene) or a derivative thereof, or a fluorinated amorphous carbon film, which is formed by CVD
A method for manufacturing a semiconductor device according to claim 1 .

Wherein said organic film is a poly (p- xylylene), poly (monochloro -p- xylylene), poly (dichloro -p- xylylene), α, α ', α ", α'" - poly (tetramethylene 6. The method for manufacturing a semiconductor device according to claim 5 , wherein the semiconductor device is any one of (fluoro-p-xylylene).

[Procedure amendment 2]

[Document name to be amended] Statement

[Correction target item name] 0029

[Correction method] Change

[Correction contents]

The O ₂ plasma is generated by the plasma generating electrode 6 on the susceptor side wall and the film forming chamber side wall.
Plasma in the wafer bottom and the film forming chamber bottom or between
It is preferable to be between the generating electrode 6 .

[Procedure amendment 3]

[Document name to be amended] Statement

[Correction target item name] 0034

[Correction method] Change

[Correction contents]

[0034]

[Embodiment 1] Embodiment 1 of the present invention will be described below. Using the poly (p-xylylene) film forming apparatus shown in FIG. 2, the temperature of the source container (2) was 200 ° C., the temperature of the pyrolysis furnace (3) was 650 ° C., and the temperature of the susceptor (4) was −20.
A poly (p-xylylene) film is formed to a thickness of 500 nm on the silicon substrate (5) under the conditions of ° C, a film forming pressure of 0.1 Torr, and a supply amount of di-p-xylylene of 20 sccm. Then in the same deposition chamber, in the susceptor side wall and the deposition chamber sidewall
A plasma generating electrode 6 as a counter electrode, for generating plasma with RF power 100W, O ₂ flow rate 100 sccm, the susceptor side wall and the film forming chamber side wall in conditions of 0.1Torr
O ₂ plasma is generated between the electrodes 6 . This removes the susceptor, the side wall of the wafer, and the peripheral poly (p-xylylene) film.

[Procedure amendment 4]

[Document name to be amended] Statement

[Correction target item name] 0036

[Correction method] Change

[Correction contents]

Embodiment 2 Hereinafter, Embodiment 2 of the present invention will be described. Here, O ₂ plasma is generated between the wafer bottom and the plasma generating electrode 6 at the bottom of the film forming chamber,
Poly (p-xylylene) film formation and peripheral removal were simultaneously performed. Using a device shown in FIG. 3, a poly (p-xylylene) film is formed to a thickness of 500 nm under the same conditions as in the first embodiment. At this time, O ₂ was supplied from the side wall of the susceptor with RW power of 100 W.
At the same time, the poly (p-xylylene) film around the wafer was removed.

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4K030 AA04 BA27 BA35 BA61 BB05 CA04 CA12 FA03 JA06 KA14 5F004 AA14 AA15 AA16 BA04 BA05 BD04 DA26 DB23 DB26 EA09 5F045 AA03 AA08 AB07 AB39 AD09 AD10 AD11 AE15 AE17 AE19 AE19 AE19 AE17 EH06 EH14 EH19 HA13 5F058 AA10 AC05 AC06 AD06 AD07 AF02 AG04 AG07 AH01

Claims (14)

[Claims] 1. An opposing electrode for plasma generation is installed at a place where the wafer surface is not exposed to the plasma atmosphere, a plasma atmosphere containing O is generated using the opposing electrode, and the organic film deposited on the edge of the wafer is removed. A method for manufacturing a semiconductor device, comprising: removing the semiconductor device. 2. An organic film CVD apparatus having an opposite electrode for plasma generation according to claim 1, wherein an organic film is formed and an organic film is removed from an end of a wafer in the same film forming chamber. A method for manufacturing a semiconductor device, comprising: 3. An organic film CVD apparatus having a counter electrode for plasma generation according to claim 1 or 2, wherein the organic film is formed and the organic film is removed from the edge of the wafer at the same time. Of manufacturing a semiconductor device. 4. An organic film formed by the CVD method according to claim 1, wherein poly (p) is used.
-Xylylene) or a derivative thereof, or a fluorinated amorphous carbon film. 5. An organic film formed by the CVD method, wherein poly (p-xylylene), poly (monochloro-p-xylylene), poly (dichloro-p-xylylene), α, α ′, α ″, α '"-
The method according to claim 4, wherein the method is one of poly (tetrafluoro-p-xylylene). 6. A counter electrode for plasma generation according to any one of claims 1 to 5, comprising:
A method of manufacturing a semiconductor device, wherein the semiconductor device is installed between susceptor side walls or between a wafer bottom surface and a film forming apparatus bottom surface. 7. The semiconductor device manufacturing apparatus according to claim 1, wherein O ₂ , NO, and N ₂ O are used as the O-containing gas. Method. 8. A counter electrode for plasma generation is provided at a position where the wafer surface is not exposed to the plasma atmosphere, and a plasma atmosphere containing O is generated using the counter electrode, and the organic film deposited on the edge of the wafer is removed. An apparatus for manufacturing a semiconductor device, wherein the apparatus is removed. 9. An organic film CVD apparatus having an opposite electrode for plasma generation according to claim 8, wherein an organic film is formed and an organic film is removed from the edge of the wafer in the same film forming chamber. An apparatus for manufacturing a semiconductor device, comprising: 10. An organic film CVD apparatus having a counter electrode for plasma generation according to claim 8 or 9, wherein the organic film is formed and the organic film is removed from the edge of the wafer at the same time. Semiconductor device manufacturing equipment. 11. The method according to claim 8, wherein
13. An apparatus for manufacturing a semiconductor device, wherein poly (p-xylylene) or a derivative thereof, or a fluorinated amorphous carbon film is used as the organic film formed by the CVD method described in the above section. 12. An organic film formed by the CVD method, wherein poly (p-xylylene), poly (monochloro-p-xylylene), poly (dichloro-p-xylylene), α, α ′, α ″, α '"-
12. The semiconductor device manufacturing apparatus according to claim 11, wherein the device is any one of poly (tetrafluoro-p-xylylene). 13. The method according to claim 8, wherein:
A semiconductor device manufacturing apparatus, characterized in that the counter electrode for plasma generation according to the above item is disposed between the side wall of the film forming chamber and the side wall of the susceptor or between the bottom surface of the wafer and the bottom surface of the film forming apparatus. 14. The method according to claim 8, wherein
9. The semiconductor device manufacturing apparatus according to claim 7, wherein O ₂ , NO, and N ₂ O are used as the O-containing gas.