JP2000099926A - Magnetic head and magnetic disk device as well as its manufacture - Google Patents
Magnetic head and magnetic disk device as well as its manufactureInfo
- Publication number
- JP2000099926A JP2000099926A JP10270917A JP27091798A JP2000099926A JP 2000099926 A JP2000099926 A JP 2000099926A JP 10270917 A JP10270917 A JP 10270917A JP 27091798 A JP27091798 A JP 27091798A JP 2000099926 A JP2000099926 A JP 2000099926A
- Authority
- JP
- Japan
- Prior art keywords
- film
- magnetoresistive
- electrode
- electrode film
- magnetic head
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は磁気ヘッド及び磁気
ディスク装置に関する。The present invention relates to a magnetic head and a magnetic disk drive.
【０００２】[0002]
【従来の技術】磁気ディスク装置用薄膜磁気ヘッドは高
速回転するディスク上で保持されたスライダ上に形成さ
れる。再生ヘッドは強磁性材料の薄膜である磁気抵抗効
果膜あるいは巨大磁気抵抗効果膜を有し、エアベアリン
グ面には磁気抵抗効果膜あるいは巨大磁気抵抗効果膜の
上下に下部シールド膜と上部シールド膜がある。上部シ
ールド膜は記録ヘッドの下部磁極層と兼用する場合もあ
る。記録密度を高めるためには磁気ディスクの表面に多
くのデータを書き込む必要がある。2. Description of the Related Art A thin-film magnetic head for a magnetic disk drive is formed on a slider held on a disk which rotates at a high speed. The reproducing head has a magneto-resistive film or giant magneto-resistive film, which is a thin film of ferromagnetic material. is there. The upper shield film may also serve as the lower magnetic pole layer of the recording head. In order to increase the recording density, it is necessary to write a lot of data on the surface of the magnetic disk.
【０００３】このためには、トラック間隔及びトラック
幅を狭くして記録密度を高める方法がある。再生ヘッド
のシールド間隔及びトラック幅は高記録密度と共に狭く
なる。シールド間隔が狭くなるに従いギャップ膜や巨大
磁気抵抗効果膜の膜厚を薄くする必要がある。[0003] For this purpose, there is a method of increasing the recording density by reducing the track interval and track width. The shield interval and track width of the reproducing head become narrower with higher recording density. It is necessary to reduce the thickness of the gap film and the giant magnetoresistive film as the shield interval becomes smaller.
【０００４】従来の方法では平坦な下部シールド上に下
部ギャップ膜を形成し、巨大磁気抵抗効果膜を形成後レ
ジスト（下層レジスト／上層レジスト）をパターニング
し、下層レジストにウェット法でアンダーカットを形成
し巨大磁気抵抗効果膜（以下ＳＶ膜と呼ぶ）をイオンミ
リング法でエッチング後、磁区制御膜及び電極膜を形成
後下層レジストから剥離し上層レジスト上の磁区制御膜
や電極膜を除去する。次に上部ギャップ膜をスパッタリ
ング法で形成し、上部シールド膜をめっきあるいはスパ
ッタリング法で形成する。In the conventional method, a lower gap film is formed on a flat lower shield, a giant magnetoresistive film is formed, and then a resist (lower resist / upper resist) is patterned, and an undercut is formed in the lower resist by a wet method. After the giant magnetoresistive film (hereinafter referred to as SV film) is etched by an ion milling method, a magnetic domain control film and an electrode film are formed, and then separated from the lower resist to remove the magnetic domain control film and the electrode film on the upper resist. Next, an upper gap film is formed by a sputtering method, and an upper shield film is formed by plating or a sputtering method.
【０００５】ＳＶ膜の下層レジストのアンダーカットは
ウェット法で形成されアンダーカット量は下層レジスト
のベーク条件や膜厚により変動する。下層レジストの膜
厚変動及びアンダーカット量の変動はトラック幅が狭く
なると、下層レジストの下にあるＳＶ膜の幅、磁区制御
膜の間隔及び電極間隔の変動の原因となる。The undercut of the lower resist of the SV film is formed by a wet method, and the amount of undercut varies depending on the baking conditions and the film thickness of the lower resist. When the track width is reduced, the variation in the film thickness of the lower resist and the variation in the amount of undercut cause a variation in the width of the SV film, the interval between the magnetic domain control films, and the electrode interval below the lower resist.
【０００６】従来の方法ではトラック幅は上層及び下層
レジストの幅や膜厚とミリング条件で決定され、トラッ
ク幅が狭くなるとともに形状のバラツキが大きくなる。
電極間隔が磁区制御膜の間隔より狭い例が米国特許5438
470 に記載されており、Ａｕ５０−３００ｎｍ／Ｔａ１
０ｎｍの２層電極の例が記載されている。In the conventional method, the track width is determined by the width and thickness of the upper and lower resist layers and the milling conditions, and the track width is reduced and the variation in the shape is increased.
U.S. Pat.
470, and Au50-300 nm / Ta1
An example of a 0 nm two-layer electrode is described.
【０００７】しかし反応性のエッチング方法に関する記
載はなく、電極の最上層を下層のマスクに用いる点につ
いても説明がない。また、マスクとして用いる最上層の
膜はマスク以外の下層の電極膜の膜厚よりも薄くした方
が高精度に加工できる。上記公知例ではＡｕの方がＴａ
よりも膜厚が厚いためエッチング時のシフト量が大きく
なるため狭い再生トラック幅を高精度に加工するのは困
難である。そこで本特許に記載するようにマスク膜の膜
厚は、下層膜の膜厚よりも薄くすることが重要である。However, there is no description about a reactive etching method, and there is no description about using the uppermost layer of an electrode as a lower layer mask. In addition, if the uppermost film used as a mask is thinner than the lower electrode film other than the mask, processing can be performed with higher precision. In the above known example, Au is Ta.
It is difficult to process a narrow reproduction track width with high accuracy because the film thickness is thicker than that, and the shift amount during etching is large. Therefore, as described in this patent, it is important that the thickness of the mask film is smaller than the thickness of the lower film.
【０００８】[0008]
【発明が解決しようとする課題】本発明の目的は、２つ
のシールド膜の間にギャップ膜を介して磁気抵抗効果膜
があり、巨大磁気抵抗効果膜あるいは磁気抵抗効果膜に
電流を流すための電極膜が磁気抵抗効果膜あるいは巨大
磁気抵抗効果膜に電気的に接触している磁気ヘッドにお
いて、電極膜の間隔を狭く加工するために反応性のエッ
チング法を用い、電極膜を２層以上とし、上層の電極膜
をエッチングされにくい膜にすることによりエッチング
時のマスク膜として用いることにより高精度の再生トラ
ック幅を得る手法及び電極構成を提供するものである。SUMMARY OF THE INVENTION An object of the present invention is to provide a giant magnetoresistive film or a magnetoresistive film having a magnetoresistive film with a gap film between two shield films. In a magnetic head where the electrode film is in electrical contact with the magnetoresistive film or the giant magnetoresistive film, use a reactive etching method to reduce the distance between the electrode films and use two or more electrode films. Another object of the present invention is to provide a method and an electrode configuration for obtaining a highly accurate reproduction track width by using the upper electrode film as a mask film at the time of etching by making the film hard to be etched.
【０００９】[0009]
【課題を解決するための手段】本発明では再生トラック
幅を電極膜の間隔で決定し、電極膜の加工にエッチング
法を使用し、電極膜の構成と電極膜の加工方法を規定し
たものである。電極膜の一部は磁気抵抗効果膜と接触
し、磁気抵抗効果膜の電圧変化すなわち出力を検知す
る。In the present invention, the reproduction track width is determined by the distance between the electrode films, the etching method is used for processing the electrode film, and the structure of the electrode film and the method for processing the electrode film are defined. is there. A part of the electrode film is in contact with the magnetoresistive film, and detects a voltage change, that is, an output of the magnetoresistive film.
【００１０】本発明では図５（６）に示すように電極膜
は２層以上からなり、上層電極膜１と下層電極膜２から
構成され、下層電極膜２の一部が磁気抵抗効果膜４と物
理的に接触し、上層電極膜１は物理的に磁気抵抗効果膜
４と接触していない。上層電極膜１は下層電極膜２のマ
スクに用いられる。磁気抵抗効果膜４を加工後磁区制御
膜３を形成し、下層電極膜２を磁気抵抗効果膜４や磁区
制御膜３上に形成する。In the present invention, as shown in FIG. 5 (6), the electrode film is composed of two or more layers and is composed of an upper electrode film 1 and a lower electrode film 2, and a part of the lower electrode film 2 And the upper electrode film 1 is not physically in contact with the magnetoresistive film 4. The upper electrode film 1 is used as a mask for the lower electrode film 2. After processing the magnetoresistive film 4, the magnetic domain control film 3 is formed, and the lower electrode film 2 is formed on the magnetoresistive film 4 and the magnetic domain control film 3.
【００１１】下層電極膜をスパッタリング法，真空蒸着
法あるいはＣＶＤ法のいずれかの方法で形成した後の磁
気抵抗効果膜４付近の浮上面に平行な断面を図５（１）
に示す。この場合磁気抵抗効果膜４は下部シールド膜８
上に形成された下部ギャップ膜６上に形成される。下部
シールド膜はめっき法あるいはスパッタリング法で形成
する。下層電極膜２の上に再生トラック幅を決定するた
めのレジスト１１をホトリソプロセスを用いて（２）の
ようなレジストパターンを形成し、次に上層電極膜１を
真空蒸着法やスパッタリング法あるいはＣＶＤ法で
（３）に示すように形成する。FIG. 5A shows a cross section parallel to the air bearing surface in the vicinity of the magnetoresistive film 4 after the lower electrode film is formed by any of the sputtering method, the vacuum evaporation method and the CVD method.
Shown in In this case, the magnetoresistive film 4 is a lower shield film 8
It is formed on the lower gap film 6 formed thereon. The lower shield film is formed by a plating method or a sputtering method. A resist 11 for determining the reproduction track width is formed on the lower electrode film 2 by a photolithography process to form a resist pattern as shown in (2), and then the upper electrode film 1 is formed by a vacuum evaporation method, a sputtering method, or the like. It is formed by the CVD method as shown in (3).
【００１２】レジスト１１は剥離しレジスト１１の間隔
が上層電極膜１に転写され、（４）の形状となる。
（４）の形状にするためにレジスト１１の側面からイオ
ンミリング法等を用いて側面の付着物を除去しても良
い。上層電極膜１が（４）の形状に加工された後、反応
性のエッチング法を用いて上層電極膜１の下にある電極
膜を上層電極膜１の間隔でエッチングする。The resist 11 is peeled off, and the space between the resists 11 is transferred to the upper electrode film 1, resulting in the shape of (4).
In order to obtain the shape of (4), the attached matter on the side surface may be removed from the side surface of the resist 11 by using an ion milling method or the like. After the upper electrode film 1 is processed into the shape of (4), the electrode film below the upper electrode film 1 is etched at intervals between the upper electrode films 1 by using a reactive etching method.
【００１３】この時、エッチングガスとしてフッ素ある
いは塩素あるいはアンモニアをすくなくとも一種類含む
混合ガスを用いる。反応性エッチング時に上層電極膜１
が後退すると下層電極膜２の間隔も広くなり、ホトマス
クあるいは上層電極膜１の間隔との差が大きくなる。At this time, a mixed gas containing at least one kind of fluorine, chlorine or ammonia is used as an etching gas. Upper electrode film 1 during reactive etching
Recedes, the interval between the lower electrode films 2 also increases, and the difference from the interval between the photomask or the upper electrode film 1 increases.
【００１４】上層電極膜はＲｕ，Ｉｒ，Ｃｒ，Ａｕ，Ｐ
ｔ，Ｃｕ，Ａｇを少なくとも１種類含む膜であり、下層
電極膜は反応性エッチングし易い材料であるＴａ，Ｎ
ｂ，Ｍｏ，Ａｌ，Ｗを少なくとも１種類以上含む合金で
あり、上層電極膜あるいは下層電極膜はさらに多層化す
ることにより電極膜の抵抗をさげることが可能である。The upper electrode film is made of Ru, Ir, Cr, Au, P
a film containing at least one of t, Cu and Ag, and a lower electrode film made of Ta, N
It is an alloy containing at least one of b, Mo, Al, and W, and the resistance of the electrode film can be reduced by further increasing the number of layers of the upper electrode film or the lower electrode film.
【００１５】反応性エッチングガスとしてＦ（フッ素）
を含む場合下層電極膜にはＴａ，Ｎｂ，ＭｏあるいはＷ
を含む膜を用い、上層電極膜１にはＲｕ，Ｉｒ，Ｃｒ，
Ａｕ，Ｐｔ，Ｃｕ，Ａｇあるいはその他の貴金属元素を
含む材料が使用できる。これらの材料の組合せは下層電
極膜２のエッチング条件において上層電極膜と下層電極
膜の選択比が１０以上となることが、望ましい。F (fluorine) as a reactive etching gas
When the lower electrode film is made of Ta, Nb, Mo or W
The upper electrode film 1 is made of Ru, Ir, Cr,
Materials containing Au, Pt, Cu, Ag or other noble metal elements can be used. It is desirable that a combination of these materials has a selectivity of 10 or more between the upper electrode film and the lower electrode film under the etching condition of the lower electrode film 2.
【００１６】このような組合せにすることにより、下層
電極膜のエッチング時の後退量を低減することができ
る。上層電極膜の膜厚は上層電極膜以外の下層電極膜の
膜厚よりも薄くて良い。しかし、低抵抗かつ耐マイグレ
ーション性が高くかつ電極間隔の精度が高ければ上層電
極膜の膜厚は厚くなっても良い。上層電極膜１には上記
貴金属元素を含む膜以外に酸化物や窒化物を使用しても
良い。By using such a combination, the amount of retreat at the time of etching the lower electrode film can be reduced. The thickness of the upper electrode film may be smaller than the thickness of the lower electrode film other than the upper electrode film. However, the thickness of the upper electrode film may be increased as long as the resistance and the migration resistance are high and the accuracy of the electrode interval is high. The upper electrode film 1 may use an oxide or a nitride in addition to the film containing the noble metal element.
【００１７】このような上層電極膜１は下層電極膜２を
エッチングする時に後退せず、下層電極膜２のみエッチ
ングされるため下層電極膜２の電極間隔は上層電極膜１
の電極間隔にほぼ一致し、レジスト１１の幅にほぼ一致
した電極間隔を作成することができる。The upper electrode film 1 does not recede when the lower electrode film 2 is etched, and is etched only in the lower electrode film 2.
And the electrode spacing substantially equal to the width of the resist 11 can be created.
【００１８】下層電極膜２の加工後は上部ギャップ膜を
形成し、さらに図５（６）のように上部シールド膜を形
成する。本構成の電極膜及び反応性エッチングを用いる
ことにより電極膜のテーパ角度も制御することができ、
上部ギャップ膜のテーパ上の膜厚を平坦部に近い膜厚に
することができ耐圧の高い再生ヘッドを製造することが
できる。After processing the lower electrode film 2, an upper gap film is formed, and then an upper shield film is formed as shown in FIG. By using the electrode film and the reactive etching of this configuration, the taper angle of the electrode film can also be controlled,
The thickness on the taper of the upper gap film can be made close to the flat portion, and a read head with high withstand voltage can be manufactured.
【００１９】即ち、本発明では電極膜を多層にし、上層
電極膜を反応性エッチングされにくい材料にすることに
より、上層電極膜を下層電極膜のマスクとして用い、下
層電極膜の間隔を高精度にエッチングすることを可能に
した。反応性エッチング時の上層電極膜と下層電極膜の
選択比が１０以上と高ければ上層電極膜を薄くでき、か
つ下層電極膜電極膜の後退量を小さくすることができ、
狭トラック再生ヘッドの電極加工には有効である。That is, in the present invention, the electrode film is formed into a multilayer and the upper electrode film is made of a material which is hardly reactively etched, so that the upper electrode film can be used as a mask for the lower electrode film and the interval between the lower electrode films can be precisely determined. Enabled to be etched. If the selectivity between the upper electrode film and the lower electrode film at the time of reactive etching is as high as 10 or more, the upper electrode film can be made thinner, and the retreat amount of the lower electrode film electrode film can be reduced,
This is effective for electrode processing of a narrow track reproducing head.
【００２０】[0020]
【発明の実施の形態】本発明の実施例を以下に説明す
る。図１から図４は磁気ディスク装置に使用される磁気
ヘッドの浮上面（媒体対向面）の磁気抵抗効果膜付近の
断面を示したものである。電極膜の一部は磁気抵抗効果
膜と接触し、磁気抵抗効果膜の電圧変化すなわち出力を
検知する。図１から図５に示すように電極膜は２層以上
からなる。図２以外の場合は上層電極膜１と下層電極膜
２から構成され、下層電極膜２の一部が磁気抵抗効果膜
４と物理的に接触し、上層電極膜１は物理的に磁気抵抗
効果膜４と接触していない。図１から図４の上層電極膜
１は下層電極膜２のマスクに用いられる。Embodiments of the present invention will be described below. FIGS. 1 to 4 show cross sections near the magnetoresistive film on the air bearing surface (surface facing the medium) of the magnetic head used in the magnetic disk drive. A part of the electrode film is in contact with the magnetoresistive film, and detects a voltage change, that is, an output of the magnetoresistive film. As shown in FIGS. 1 to 5, the electrode film includes two or more layers. In the case other than FIG. 2, the upper electrode film 1 is composed of an upper electrode film 1 and a lower electrode film 2, and a part of the lower electrode film 2 is in physical contact with the magnetoresistive film 4, and the upper electrode film 1 is physically magnetoresistive. Not in contact with membrane 4. The upper electrode film 1 of FIGS. 1 to 4 is used as a mask for the lower electrode film 2.
【００２１】まず、図１について以下に説明する。磁気
抵抗効果膜４を加工後磁区制御膜３を形成し、下層電極
膜２を磁気抵抗効果膜４や磁区制御膜３上に形成する。
下層電極膜２をスパッタリング法、真空蒸着法あるいは
ＣＶＤ法のいずれかの方法で形成する。この場合磁気抵
抗効果膜４は下部シールド膜８上に形成された下部ギャ
ップ膜６上に形成される。下部シールド膜はめっき法あ
るいはスパッタリング法で形成する。First, FIG. 1 will be described below. After processing the magnetoresistive film 4, the magnetic domain control film 3 is formed, and the lower electrode film 2 is formed on the magnetoresistive film 4 and the magnetic domain control film 3.
The lower electrode film 2 is formed by any of a sputtering method, a vacuum evaporation method, and a CVD method. In this case, the magnetoresistive film 4 is formed on the lower gap film 6 formed on the lower shield film 8. The lower shield film is formed by a plating method or a sputtering method.
【００２２】下層電極膜２の上に再生トラック幅を決定
するためのレジスト１１をホトリソプロセスを用いて
（２）のようなレジストパターンを形成し、次に上層電
極膜１を真空蒸着法やスパッタリング法あるいはＣＶＤ
法で（３）に示すように形成する。レジスト１１は剥離
しレジスト１１の間隔が上層電極膜１に転写され、(４)
の形状となる。A resist 11 for determining the reproduction track width is formed on the lower electrode film 2 by a photolithography process to form a resist pattern as shown in (2), and then the upper electrode film 1 is formed by a vacuum evaporation method or the like. Sputtering method or CVD
It is formed by the method as shown in (3). The resist 11 is peeled off, and the distance between the resists 11 is transferred to the upper electrode film 1, and (4)
It becomes the shape of.
【００２３】（４）の形状にするためにレジスト１１の
側面からイオンミリング法等を用いて側面の付着物を除
去しても良い。上層電極膜１が（４）の形状に加工され
た後、反応性のエッチング法を用いて上層電極膜１の下
にある電極膜を上層電極膜１の間隔でエッチングする。
この時、エッチングガスとしてフッ素あるいは塩素ある
いはアンモニアをすくなくとも一種類含む混合ガスを用
いる。反応性エッチング時に上層電極膜１が後退すると
下層電極膜２の間隔も広くなり、ホトマスクあるいは上
層電極膜１の間隔との差が大きくなる。In order to obtain the shape of (4), deposits on the side surfaces of the resist 11 may be removed by using an ion milling method or the like. After the upper electrode film 1 is processed into the shape of (4), the electrode film below the upper electrode film 1 is etched at intervals between the upper electrode films 1 by using a reactive etching method.
At this time, a mixed gas containing at least one kind of fluorine, chlorine or ammonia is used as an etching gas. When the upper electrode film 1 recedes during the reactive etching, the distance between the lower electrode films 2 also increases, and the difference from the distance between the photomask or the upper electrode film 1 increases.
【００２４】上層電極膜はＲｕ，Ｉｒ，Ｃｒ，Ａｕ，Ｐ
ｔ，Ｃｕ，Ａｇを少なくとも１種類含む膜であり、下層
電極膜は反応性エッチングし易い材料であるＴａ、Ｎ
ｂ，Ｍｏ，Ａｌ，Ｗを少なくとも１種類以上含む合金で
あり、上層電極膜あるいは下層電極膜はさらに多層化す
ることにより電極膜の抵抗をさげることが可能である。The upper electrode film is made of Ru, Ir, Cr, Au, P
It is a film containing at least one of t, Cu, and Ag, and the lower electrode film is made of Ta, N
It is an alloy containing at least one of b, Mo, Al, and W, and the resistance of the electrode film can be reduced by further increasing the number of layers of the upper electrode film or the lower electrode film.
【００２５】反応性エッチングガスとしてＦ（フッ素）
を含む場合下層電極膜にはＴａ，Ｎｂ，ＭｏあるいはＷ
を含む膜を用い、上層電極膜１にはＲｕ，Ｉｒ，Ｃｒ，
Ａｕ，Ｐｔ，Ｃｕ，Ａｇあるいはその他の貴金属元素を
含む材料が使用できる。これらの材料の組合せは下層電
極膜２のエッチング条件において上層電極膜と下層電極
膜の選択比が１０以上となることが、望ましい。F (fluorine) as a reactive etching gas
When the lower electrode film is made of Ta, Nb, Mo or W
The upper electrode film 1 is made of Ru, Ir, Cr,
Materials containing Au, Pt, Cu, Ag or other noble metal elements can be used. It is desirable that a combination of these materials has a selectivity of 10 or more between the upper electrode film and the lower electrode film under the etching condition of the lower electrode film 2.
【００２６】このような組合せにすることにより、下層
電極膜のエッチング時の後退量を低減することができ
る。上層電極膜の膜厚は上層電極膜以外の下層電極膜の
膜厚よりも薄くて良い。With such a combination, the amount of retreat during etching of the lower electrode film can be reduced. The thickness of the upper electrode film may be smaller than the thickness of the lower electrode film other than the upper electrode film.
【００２７】しかし、低抵抗かつ耐マイグレーション性
が高くかつ電極間隔の精度が高ければ上層電極膜の膜厚
は厚くなっても良い。エッチングした後の電極形状を
（５）に示す。Ｆを使用せずＡｒ＋Ｏ2 混合ガスを用い
たエッチングにより下層電極膜に貴金属膜を用いること
ができる。この時マスクとなる上層電極膜には酸化物
膜、窒化物膜が用いられる。電極端部のテーパ角は３０
度から８０度である。However, the thickness of the upper electrode film may be increased as long as the resistance and the migration resistance are high and the accuracy of the electrode interval is high. The shape of the electrode after etching is shown in (5). A noble metal film can be used for the lower electrode film by etching using an Ar + O 2 mixed gas without using F. At this time, an oxide film or a nitride film is used as the upper electrode film serving as a mask. The electrode end taper angle is 30
Degrees to 80 degrees.
【００２８】図６は本発明の再生ヘッドを用いた記録再
生ヘッドを浮上面側から見た場合である。基板上に形成
した下部シールド膜８は、ＮｉＦｅ合金膜、センダスト
膜あるいは軟磁性非晶質合金膜である。下部シールド８
上には膜厚８０ｎｍ以下のＡｌ2Ｏ3，Ｓｉ2Ｏ3、Ａｌ2
Ｏ3とＳｉＯ2 の混合膜あるいは窒化膜のいずれかから
なる下部ギャップ膜６をスパッタリング法やＣＶＤ法で
形成する。FIG. 6 shows a recording / reproducing head using the reproducing head of the present invention when viewed from the floating surface side. The lower shield film 8 formed on the substrate is a NiFe alloy film, a sendust film or a soft magnetic amorphous alloy film. Lower shield 8
Al 2 O 3 , Si 2 O 3 , Al 2 having a thickness of 80 nm or less
A lower gap film 6 made of either a mixed film of O 3 and SiO 2 or a nitride film is formed by a sputtering method or a CVD method.
【００２９】下部ギャップ膜２上の凹凸は１０ｎｍ以下
であることが望ましい。下部ギャップ６上にＳＶ膜をス
パッタリング法やイオンビームスパッタリング法で作製
する。膜構成は基板側からＴａ５ｎｍ／ＮｉＦｅ５ｎｍ
／Ｃｏ１ｎｍ／Ｃｕ２.５ nm／Ｃｏ３ｎｍ／ＣｒＭｎＰ
ｔ２５ｎｍ／Ｔａ３ｎｍである。The unevenness on the lower gap film 2 is desirably 10 nm or less. An SV film is formed on the lower gap 6 by a sputtering method or an ion beam sputtering method. The film configuration is Ta5nm / NiFe5nm from the substrate side.
/Co1nm/Cu2.5nm/Co3nm/CrMnP
t25 nm / Ta3 nm.
【００３０】反強磁性膜であるＣｒＭｎＰｔの代わり
に、ＭｎＰｔ合金，ＮｉＭｎ合金でも良い。反強磁性膜
上のＴａは無くても良い。また反強磁性膜が基板側にあ
る膜構成でも可能である。あるいはＲｕを用いて固定層
や自由層が積層されたＳＶ膜でも良い。ＳＶ膜の両端部
に磁区制御膜３をスパッタリング法や真空蒸着法等で作
製する。Instead of CrMnPt which is an antiferromagnetic film, a MnPt alloy or a NiMn alloy may be used. Ta on the antiferromagnetic film may not be present. Further, a film configuration in which the antiferromagnetic film is on the substrate side is also possible. Alternatively, an SV film in which a fixed layer and a free layer are stacked using Ru may be used. The magnetic domain control films 3 are formed on both ends of the SV film by a sputtering method, a vacuum evaporation method, or the like.
【００３１】磁区制御膜３はＣｏＣｒＰｔ合金，ＣｏＰ
ｔ合金あるいはこれらの合金膜にＺｒＯ2 等の酸化物を
添加した膜であり、これらの膜の下地膜として非磁性の
Ｃｒ，Ｎｂ，Ｍｏ等のｂｃｃ構造の膜を用いることも可
能である。これらの膜の保磁力は約１０００−１５００
Ｏｅである。磁区制御膜をリフトオフする前に、磁区制
御膜の保護膜として薄いＣｒあるいは貴金属合金、ある
いは高融点金属膜を形成しても良い。The magnetic domain control film 3 is made of a CoCrPt alloy, CoP
It is a film in which an oxide such as ZrO 2 is added to a t alloy or an alloy film thereof, and a film having a bcc structure of nonmagnetic Cr, Nb, Mo or the like can be used as a base film of these films. The coercivity of these films is about 1000-1500
Oe. Before lifting off the magnetic domain control film, a thin Cr, a noble metal alloy, or a high melting point metal film may be formed as a protective film of the magnetic domain control film.
【００３２】ギャップ膜５をスパッタリング法やＣＶＤ
法等で作製する。電極膜２層以上の多層であり、低比抵
抗かつ高融点材料であるＴａ，ＴａＷ，Ｒｕ，Ｉｒ，Ｎ
ｂ，Ｐｔのうちのいずれかを含むものである。Ｔａ／Ａ
ｕ／Ｔａ，Ｒｕ／Ｐｔ／Ｒｕのような多層膜からなる電
極とすることもできる。下層電極膜２の膜厚は２００ｎ
ｍ以下である。The gap film 5 is formed by sputtering or CVD.
It is produced by a method or the like. Ta, TaW, Ru, Ir, N, which is a multilayer having two or more electrode films and has a low specific resistance and a high melting point
b and Pt. Ta / A
An electrode composed of a multilayer film such as u / Ta or Ru / Pt / Ru can also be used. The thickness of the lower electrode film 2 is 200 n
m or less.
【００３３】また上部ギャップ５はＡｌ2Ｏ3やＡｌＮ，
Ｓｉ3Ｎ4，ＳｉＯ2 あるいはこれらの混合膜であり、ス
パッタリング法や低温(２５０℃以下の基板温度)ＣＶＤ
で形成する。さらにこの上に上部シールド膜（記録ヘッ
ドの下部磁極）７をスパッタリング法あるいはメッキ法
により形成し、下部磁極層２１，ギャップ膜２３，上部
磁極層２４及び高比抵抗磁極層２５から構成された磁性
膜と保護膜２２及び保護膜２６によって記録ヘッドは保
護されている。なお、高比抵抗磁極層２５は図６，図７
とは別に、浮上面から１μｍ以上離すことにより磁極層
２５端部から磁界の漏洩を少なくした方が良い。また、
図７のように上部シールド膜をトリミングした記録ヘッ
ドの方が端部磁界が減少し、磁界勾配が増加する。The upper gap 5 is made of Al 2 O 3 , AlN,
Si 3 N 4 , SiO 2, or a mixed film thereof, which is formed by sputtering or low-temperature (substrate temperature of 250 ° C. or less) CVD
Formed. Further, an upper shield film (a lower magnetic pole of the recording head) 7 is formed thereon by a sputtering method or a plating method, and a magnetic layer composed of a lower magnetic pole layer 21, a gap film 23, an upper magnetic pole layer 24, and a high resistivity magnetic pole layer 25 is formed. The recording head is protected by the film, the protective film 22 and the protective film 26. The high resistivity magnetic pole layer 25 is shown in FIGS.
Separately, it is preferable to reduce the leakage of the magnetic field from the end of the pole layer 25 by separating it from the air bearing surface by 1 μm or more. Also,
As shown in FIG. 7, in the recording head in which the upper shield film is trimmed, the end magnetic field decreases and the magnetic field gradient increases.
【００３４】図８は記録再生ヘッドの斜視図の１例であ
る。記録部は下部磁極層１０３，ギャップ膜１０２，上
部磁極層１０１及び高比抵抗磁極層１０７から構成され
た磁性膜から構成され、再生部は、下部シールド膜１０
６上のＳＶ膜１０４に電極膜１０５を通して電流を流
し、記録ビット１１０からの漏洩磁界の変化を電圧の変
化に変換できる。FIG. 8 is an example of a perspective view of a recording / reproducing head. The recording unit is composed of a magnetic film composed of a lower magnetic pole layer 103, a gap film 102, an upper magnetic pole layer 101, and a high resistivity magnetic pole layer 107, and the reproducing unit is a lower shield film 10
A current flows through the SV film 104 on the electrode 6 through the electrode film 105, and a change in the leakage magnetic field from the recording bit 110 can be converted into a change in voltage.
【００３５】磁気ディスク装置には位置決め系３２，本
発明の磁気ヘッド２１，媒体１１，スピンドル３１，信
号処理系３３が搭載されている。The magnetic disk drive is equipped with a positioning system 32, a magnetic head 21, a medium 11, a spindle 31, and a signal processing system 33 according to the present invention.
【００３６】[0036]
【発明の効果】本発明では、記録再生分離ヘッドの再生
ヘッドの狭ギャップ狭トラックに対する最適構造と作製
法が記載されており、面記録密度１０Ｇｂ／ｉｎ２以上
の磁気ディスク装置に用いる磁気記録ヘッドを提供でき
る。According to the present invention, an optimum structure and a manufacturing method of a read / write separation head for a narrow head / narrow track of a read / write head are described. A magnetic recording head used for a magnetic disk device having an areal recording density of 10 Gb / in2 or more is described. Can be provided.
【図１】本発明の実施例である磁気ヘッドの製造方法の
一部を示す側断面図。FIG. 1 is a side sectional view showing a part of a method of manufacturing a magnetic head according to an embodiment of the present invention.
【図２】本発明の実施例である磁気ヘッドの製造方法の
一部を示す側断面図。FIG. 2 is a side sectional view showing a part of a method of manufacturing a magnetic head according to an embodiment of the present invention.
【図３】本発明の実施例である磁気ヘッドの製造方法の
一部を示す側断面図。FIG. 3 is a side sectional view showing a part of a method of manufacturing a magnetic head according to an embodiment of the present invention.
【図４】本発明の実施例である磁気ヘッドの製造方法の
一部を示す側断面図。FIG. 4 is a side sectional view showing a part of a method of manufacturing a magnetic head according to an embodiment of the present invention.
【図５】（１）から（６）までは磁気ヘッドの製造順序
を示す側断面図。FIG. 5 is a side sectional view showing a manufacturing order of the magnetic heads in (1) to (6).
【図６】本発明の他の実施例として示した磁気ヘッドの
側断面図。FIG. 6 is a side sectional view of a magnetic head shown as another embodiment of the present invention.
【図７】本発明の他の実施例として示した磁気ヘッドの
側断面図。FIG. 7 is a side sectional view of a magnetic head shown as another embodiment of the present invention.
【図８】本発明の記録再生ヘッドの斜視図。FIG. 8 is a perspective view of a recording / reproducing head according to the present invention.
【図９】本発明の磁気ヘッドを使用した磁気ディスク装
置の構成図。FIG. 9 is a configuration diagram of a magnetic disk drive using the magnetic head of the present invention.
１…上層電極膜、２…下層電極膜、３…磁区制御膜、４
…ＳＶ（ＧＭＲ）膜、５…ギャップ（上部ギャップ）
膜、６…下部ギャップ膜、７…上部シールド膜、８…下
部シールド膜、９…基板、１１…磁気ディスク、２１…
下部磁極層、21′…磁気ヘッド、２２…保護膜、２３…
ギャップ膜、２４…上部磁極膜、２５…高比抵抗磁極
層、２６…保護膜、３１…スピンドル、３２…位置決め
系、３３…信号処理系、１０１…上部磁極層、１０２…
ギャップ膜、１０３…下部磁極層、１０４…ＳＶ膜、１
０５…電極膜、１０６…基板、１０７…高比抵抗磁極
層、１０８…上部シールド膜、１０９…コイル、１１０
…記録ビット。DESCRIPTION OF SYMBOLS 1 ... Upper electrode film, 2 ... Lower electrode film, 3 ... Magnetic domain control film, 4
... SV (GMR) film, 5 ... Gap (upper gap)
Film 6 lower gap film 7 upper shield film 8 lower shield film 9 substrate 11 magnetic disk 21
Lower magnetic pole layer, 21 ': magnetic head, 22: protective film, 23:
Gap film, 24: upper magnetic pole film, 25: high resistivity magnetic pole layer, 26: protective film, 31: spindle, 32: positioning system, 33: signal processing system, 101: upper magnetic pole layer, 102 ...
Gap film, 103: lower magnetic pole layer, 104: SV film, 1
05: electrode film, 106: substrate, 107: high resistivity magnetic pole layer, 108: upper shield film, 109: coil, 110
... record bit.
フロントページの続き (72)発明者 府山 盛明 東京都国分寺市東恋ケ窪一丁目280番地 株式会社日立製作所中央研究所内 Ｆターム(参考） 5D034 BA03 BA09 BB08 CA06 DA04 DA07 Continuation of the front page (72) Inventor Moriaki Fuyama 1-280 Higashi Koigakubo, Kokubunji-shi, Tokyo F-term in Central Research Laboratory, Hitachi, Ltd. 5D034 BA03 BA09 BB08 CA06 DA04 DA07
Claims (7)
て磁気抵抗効果膜があり、巨大磁気抵抗効果膜あるいは
磁気抵抗効果膜に電流を流す電極膜が磁気抵抗効果膜あ
るいは巨大磁気抵抗効果膜に電気的に接触している磁気
ヘッドにおいて、巨大磁気抵抗効果膜あるいは磁気抵抗
効果膜上の電極膜が２層以上からなり、電極膜の上層の
膜を下層電極膜のマスクとして用いており、電極膜の上
層が下層よりもエッチングされにくい元素を含む膜から
なることを特徴とする磁気ヘッド。A magnetoresistive film is provided between two shield films via a gap film, and a giant magnetoresistive film or an electrode film for passing a current through the magnetoresistive film is a magnetoresistive film or a giant magnetoresistive effect. In a magnetic head that is in electrical contact with the film, the giant magnetoresistive film or the electrode film on the magnetoresistive film consists of two or more layers, and the upper film of the electrode film is used as a mask for the lower electrode film. A magnetic head, wherein the upper layer of the electrode film is made of a film containing an element which is less easily etched than the lower layer.
て磁気抵抗効果膜があり、巨大磁気抵抗効果膜あるいは
磁気抵抗効果膜に電流を流す電極膜が磁気抵抗効果膜あ
るいは巨大磁気抵抗効果膜に電気的に接触している磁気
ヘッドにおいて、巨大磁気抵抗効果膜あるいは磁気抵抗
効果膜上の電極膜が２層以上からなり、電極膜の最上層
の膜が貴金属を含む膜であり、かつ最上層の膜厚が下層
の膜厚よりも薄く、磁気抵抗効果膜と接触しないことを
特徴とする磁気ヘッド。2. A magnetoresistive film having a gap film between two shield films, and a giant magnetoresistive film or an electrode film for passing a current through the magnetoresistive film is a magnetoresistive film or a giant magnetoresistive effect. In a magnetic head that is in electrical contact with the film, the giant magnetoresistive film or the electrode film on the magnetoresistive film is composed of two or more layers, the uppermost film of the electrode film is a film containing a noble metal, and A magnetic head, wherein the thickness of the uppermost layer is smaller than the thickness of the lower layer and does not contact the magnetoresistive film.
の膜がＲｕ，Ｉｒ，Ｃｒ，Ａｕ，Ｐｔ，Ｃｕ，Ａｇを少
なくとも１種類含む膜であり、最上層の電極膜は磁気抵
抗効果膜と接触しないことを特徴とする磁気ディスク装
置。3. The electrode film according to claim 1, wherein the uppermost film of the electrode film is a film containing at least one kind of Ru, Ir, Cr, Au, Pt, Cu, and Ag. A magnetic disk drive not contacting the effect film.
て磁気抵抗効果膜があり、巨大磁気抵抗効果膜あるいは
磁気抵抗効果膜に電流を流す電極膜が磁気抵抗効果膜あ
るいは巨大磁気抵抗効果膜に電気的に接触している磁気
ヘッドにおいて、巨大磁気抵抗効果膜あるいは磁気抵抗
効果膜上の電極膜が２層以上からなり、電極膜の最上層
の膜以外の電極膜を反応性のエッチングにより加工する
こと特徴とする磁気ヘッド作製方法。4. A magnetoresistive film having a gap film between two shield films, and a giant magnetoresistive film or an electrode film for flowing a current through the magnetoresistive film is formed by a magnetoresistive film or a giant magnetoresistive effect. In a magnetic head that is in electrical contact with the film, the giant magnetoresistive film or the electrode film on the magnetoresistive film consists of two or more layers, and the electrode films other than the uppermost film of the electrode film are reactively etched. A method for manufacturing a magnetic head, characterized by processing by:
て磁気抵抗効果膜があり、巨大磁気抵抗効果膜あるいは
磁気抵抗効果膜に電流を流すための電極膜が磁気抵抗効
果膜あるいは巨大磁気抵抗効果膜に電気的に接触してい
る磁気ヘッドにおいて、巨大磁気抵抗効果膜あるいは磁
気抵抗効果膜上の電極膜が２層以上からなり、電極膜の
最上層の膜が酸化物や窒化物を少なくとも１種類含む膜
であり、最上層の電極膜は磁気抵抗効果膜と接触しない
ことを特徴とする磁気ヘッド。5. A magnetoresistive film having a gap film between two shield films, and a giant magnetoresistive film or an electrode film for flowing a current to the magnetoresistive film is a magnetoresistive film or a giant magnetic film. In a magnetic head that is in electrical contact with the resistive film, the giant magnetoresistive film or the electrode film on the magnetoresistive film is composed of two or more layers, and the uppermost film of the electrode film is made of oxide or nitride. A magnetic head comprising at least one kind of film, wherein an uppermost electrode film does not contact the magnetoresistive film.
て磁気抵抗効果膜があり、巨大磁気抵抗効果膜あるいは
磁気抵抗効果膜に電流を流す電極膜が磁気抵抗効果膜あ
るいは巨大磁気抵抗効果膜に電気的に接触している磁気
ヘッドにおいて、巨大磁気抵抗効果膜あるいは磁気抵抗
効果膜上の電極膜が２層以上からなり、電極膜の最上層
の膜の間隔が下層の電極膜の幅よりも広く、最上層の膜
厚が下層よりも薄いことを特徴とする磁気ヘッド。6. A magnetoresistive film having a gap film between two shield films, and a giant magnetoresistive film or an electrode film for flowing a current through the magnetoresistive film is a magnetoresistive film or a giant magnetoresistive effect. In a magnetic head in electrical contact with the film, the giant magnetoresistive film or the electrode film on the magnetoresistive film is composed of two or more layers, and the interval between the uppermost electrode films is the width of the lower electrode film. A magnetic head characterized in that the thickness of the uppermost layer is wider than that of the lower layer.
て、電極膜の間隔が磁区制御膜の間隔よりも狭いことを
特徴とする磁気ヘッド。7. The magnetic head according to claim 1, wherein an interval between the electrode films is smaller than an interval between the magnetic domain control films.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10270917A JP2000099926A (en) | 1998-09-25 | 1998-09-25 | Magnetic head and magnetic disk device as well as its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10270917A JP2000099926A (en) | 1998-09-25 | 1998-09-25 | Magnetic head and magnetic disk device as well as its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000099926A true JP2000099926A (en) | 2000-04-07 |
Family
ID=17492801
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10270917A Pending JP2000099926A (en) | 1998-09-25 | 1998-09-25 | Magnetic head and magnetic disk device as well as its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000099926A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6665154B2 (en) * | 2001-08-17 | 2003-12-16 | Headway Technologies, Inc. | Spin valve head with a current channeling layer |
| US6829122B2 (en) | 2001-02-15 | 2004-12-07 | Fujitsu Limited | Magnetic head of a magnetoresistance type having an underlying layer having a laminated structure of a tungsten-group metal layer formed on a tantalum-group metal layer |
| US7136264B2 (en) * | 2003-04-10 | 2006-11-14 | Hitachi Global Storage Technologies Netherlands, B.V. | Use of gold leads in lead overlaid type of GMR sensor |
| US7141508B2 (en) | 2001-08-08 | 2006-11-28 | Tdk Corporation | Magnetoresistive effect thin-film magnetic head and manufacturing method of magnetoresistive effect thin-film magnetic head |
| US7231705B2 (en) | 2003-02-18 | 2007-06-19 | Tdk Corporation | Method for forming a resist pattern of magnetic device |
-
1998
- 1998-09-25 JP JP10270917A patent/JP2000099926A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6829122B2 (en) | 2001-02-15 | 2004-12-07 | Fujitsu Limited | Magnetic head of a magnetoresistance type having an underlying layer having a laminated structure of a tungsten-group metal layer formed on a tantalum-group metal layer |
| US7141508B2 (en) | 2001-08-08 | 2006-11-28 | Tdk Corporation | Magnetoresistive effect thin-film magnetic head and manufacturing method of magnetoresistive effect thin-film magnetic head |
| US6665154B2 (en) * | 2001-08-17 | 2003-12-16 | Headway Technologies, Inc. | Spin valve head with a current channeling layer |
| US7231705B2 (en) | 2003-02-18 | 2007-06-19 | Tdk Corporation | Method for forming a resist pattern of magnetic device |
| US7784170B2 (en) | 2003-02-18 | 2010-08-31 | Tdk Corporation | Method for forming a resist pattern of magnetic device by etching with a gas cluster ion beam |
| US7136264B2 (en) * | 2003-04-10 | 2006-11-14 | Hitachi Global Storage Technologies Netherlands, B.V. | Use of gold leads in lead overlaid type of GMR sensor |
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