JP2000094304A - Polishing device and polishing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent polishing liquid from arriving at a rear surface of a workpiece through a clearance between the workpiece and a workpiece holder by blowing gas against the rear surface of the workpiece from the workpiece holder and letting gas blow through the clearance therebetween. SOLUTION: In a polishing device which polishes a substrate etc., a workpiece 11 is pressed against a face of a surface plate 13 at a fixed pressure by a workpiece holder 12. Gas 14 is blown against the rear surface 11a side of the workpiece 11 from a workpiece holding face 12a, the blown gas 14 reaches a peripheral fringe part of the workpiece 11 along a clearance between the workpiece holder 12 and the rear surface 11a of the workpiece, and the gas is blown to the outside through the clearance between the workpiece holder 12 and the workpiece 11 from the peripheral fringe part of the workpiece 11. Since the gas 14 is blown toward the outside through the clearance between the rear surface 11a of the workpiece and the workpiece holder 12 in this way, edging polishing liquid or polishing liquid which attempts to enter there is blown off to prevent it from entering this clearance.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing apparatus and a polishing method for polishing substrates used for semiconductor wafers and other electronic parts, and more particularly to polishing using a so-called etching polishing liquid. And technology for flattening with high precision.

[0002]

2. Description of the Related Art A conventional technique will be described with reference to the drawings. 2. Description of the Related Art Conventionally, polishing technology has played an important role in industries such as electronic components. For example, in the case of a semiconductor device, a semiconductor block is formed by growing a semiconductor block from a seed crystal, forming a semiconductor wafer by slicing the block, and performing various processes on the surface of the semiconductor wafer.

At this time, since the processing on the surface of the wafer is performed precisely with an accuracy of the order of 1 micron or less, the surface roughness and flatness of the surface of the semiconductor wafer are important factors. In particular, in recent years, the diameter of semiconductor wafers has been increasing, and semiconductor wafers having a diameter of about 10 inches have been used, and the polishing technique for the wafer surface in the production of semiconductor wafers has become increasingly important. .

In the field of electronic components, not only semiconductor wafers but also, for example, magnetic heads, disk-shaped substrates used for SAW resonators, piezoelectric elements or card disk devices, and heads used for copying and facsimile machines. For such materials, extremely high flatness and good surface roughness are required, and in any case, as the size of the substrate, ie, the work, is increased, further improvement in surface roughness and flattening of the work are required. It is becoming.

We have been developing technologies for improving the surface roughness and flattening the work, and some of these results have already been filed in Japanese Patent Application No. 10-251415. However, there are various problems that have not yet been solved by these techniques, and these will be sequentially described.

FIG. 13 (a) shows a conventional basic structure for polishing a flat work. The work 131 is fixed to a work holder 132, and the surface to be polished of the work 131 is pressed against a surface plate 133, and a polishing liquid 136 is applied on the surface plate 133. By performing the movement, the surface of the work 131 is mechanically scraped off, thereby improving the surface roughness or the flatness.

In particular, recently, a method called mechanochemical polishing has been used to improve the surface roughness or the flatness. The mechanochemical polishing is a relatively new technique of polishing a work by chemically changing the surface of the work by physical and chemical actions, instead of polishing the work by a conventional mechanical cutting action.

That is, this technique induces a physical or chemical change on the solid surface by mechanical energy such as tension, compression, shear, bending, plastic deformation, etc. on the surface of the work,
The chemical properties are given to the gas or liquid substance existing around the solid so that a chemical reaction occurs directly on the surface of the work where these properties have changed, and this chemical reaction is combined with a certain pressure. This is a technique in which the surface of the work is polished extremely precisely.

FIG. 13A shows a basic structure used for such a mechanochemical polishing, and the polishing liquid used for the mechanochemical polishing is herein referred to as an etching polishing liquid. This will be described below. FIG. 1B shows a very basic problem in that case.

As described above, the surface of the surface plate 133 is coated with the etching polishing liquid 136.
When the base 31 moves relative to the base 133, the etching polishing liquid 136 rushes toward the end surface of the work 131 so as to make a wave. Then, as shown in FIG. 3B, the etching polishing liquid 136 is not only applied to the desired workpiece surface to be polished but also to the workpiece holder 132 and the workpiece 131.
Work 131 enters through gaps between
To the back side of the.

However, as described above, since the etching polishing liquid 136 directly reacts chemically with the material of the work 131, the work 1 which is an undesired polished surface is not used.
There is also a problem that the back surface side of the polishing pad 31 is polished by the etching polishing liquid 136. Therefore, conventionally, a method of avoiding such an undesired polishing surface, that is, the polishing of the back surface side of the work, has been considered.

FIG. 14 shows a problem at the time of this polishing. FIG. 14A shows a normal polishing state, and the polishing allowance 141a is uniformly polished from the work 141.
FIG. 6B shows a state in which the vicinity of the peripheral portion 141b of the work 141 is particularly locally etched by the etching polishing liquid spilled to the back surface side, as shown in FIG. A configuration as shown in FIG. 15 is adopted in order to avoid a complicated state.

FIG. 15 shows a structure for avoiding the problem shown in FIG. That is, since it is inevitable that the etching polishing liquid flows to the back side, some cover, that is, a back cover 153 is disposed on the back side so that the back side does not react with the etching polishing liquid. As the back cover 153, for example, a material such as hot melt wax is used, and the work 1 is heated and melted or softened.
At the same time, the back cover 153 is brought into close contact with the work holder 51, and at the same time, it is also used as a close contact means to the work holder 152.

[0014]

As described above, the basic problems of the prior art are that in a polishing apparatus or a polishing method using this kind of etching polishing liquid, the etching polishing liquid flows from a gap between a work and a work holder to cause a capillary phenomenon or the like. This causes a problem that the back side of the work, which is an undesired polished surface, is polished by the etching polishing solution. Therefore, a back cover for eliminating a reaction between the etching polishing solution and the back surface of the work is disposed in this portion. Like that.

However, a problem as shown in FIG. 16 occurs. First, when the back cover 163 is formed of, for example, the above-mentioned hot melt wax, the thickness of the back cover 163 cannot be completely and uniformly applied to the entire surface. As shown in FIG. 16, a thick hot melt wax is formed at the end of the substrate and a thin hot melt wax is formed at the other side.
As shown in (b), there is a problem that the workpiece polishing surface 161a, which is supposed to be polished uniformly, is polished non-uniformly reflecting the thickness variation due to the hot melt wax.

Since the work holding surface of the work holder 162 is formed completely parallel to the surface plate, the work 161 affixed with hot melt wax having a thickness variation at this portion results in a work. A height difference reflecting the thickness variation is generated with respect to the work holding surface or the surface plate surface of the holder 162, and the work 161 is polished so that the height is corrected. Thus, the polished surface of the work 161 reflects the height difference of the hot melt wax.

In order to solve such a problem, for example, an insulating layer or a metal layer which does not react with these polishing liquids is formed on the back surface without using hot melt wax to eliminate the reaction on the back surface side. However, it is not always easy to form such a thin film, the device becomes large, the process becomes complicated, and the cost increases because of the complicated process. In some cases, the thin film must be removed.

Therefore, in the present invention, a polishing apparatus and a polishing method having a structure in which the etching polishing liquid does not flow to the back side, which is an undesired polishing surface of the work, without using such a back cover or the like, The present invention provides a technique for arbitrarily creating a polishing promoting portion and a non-promoting portion on the surface of a work by using the method. The means for solving these problems according to the present invention will be described below.

[0019]

According to the present invention, in order to solve the above-mentioned problems, polishing is performed by blowing a gas from the work holder to the back surface of the work, and blowing the gas from a gap between the work and the work holder. Provided is a polishing apparatus that prevents a liquid from flowing around a back surface of a work from a gap between a work and a work holder.
In a polishing apparatus using an etching polishing liquid, a gas is blown from a work holder to the back surface of the work, and a gas is blown out from a gap between the work and the work holder so that the etching polishing liquid is separated from the work. Provided is a polishing apparatus that does not go around the back surface of a work from a gap of a work holder.

Liquid is sprayed from the work holder to the back surface of the work, and the liquid is blown out from the gap between the work and the work holder, so that the polishing liquid flows from the gap between the work and the work holder to the back surface of the work. Provided is a polishing apparatus that is prevented from wrapping around.
4. The polishing method according to claim 1, further comprising: means for imparting a bending deformation to the work; and means for polishing the work to which the bending deformation has been applied by said means. Provide equipment. 4. The polishing apparatus according to claim 1, further comprising means for applying a warp deformation to the work, and means for polishing the work to which the warp deformation has been applied by said means. Provide equipment.

Further, there is provided a means for imparting torsional deformation to the work, and means for polishing the work to which the torsional deformation has been applied by the means. The polishing apparatus according to the above is provided. The polishing apparatus according to any one of claims 4 to 6, wherein the means for imparting the deformation is a partial pressing force of the work by the gas from a gas outlet provided in the work holder. I will provide a. 8. The gas outlet according to claim 7, wherein the gas outlets are arranged concentrically on a work holding surface of the work holder.
And a polishing apparatus according to (1).

The polishing apparatus according to claim 7, wherein the gas outlets are arranged so as to draw a grid on a work holding surface of the work holder. Further, it is possible to control the temperature of gas blown out from the gas outlet,
A polishing apparatus according to any one of claims 8 and 9 is provided. In a polishing apparatus using an etching polishing liquid, a work arrangement portion of a work holder can be partially heated so as to generate a temperature distribution on a polished surface of the work. A polishing apparatus for controlling surface activity is provided.

In a polishing method using an etching polishing liquid, a gas is blown from the work holder to the back surface of the work, and the gas is blown out from a gap between the work and the work holder so that the etching polishing liquid is discharged. The present invention provides a polishing method for polishing a work while preventing the work from going around a back surface of the work from a gap between the work and a work holder. Also, there is provided a polishing method using an etching polishing liquid, wherein the polishing is performed while imparting any one or more of bending, warping, and twisting to the work. The present invention also provides a polishing method using an etching polishing liquid, wherein the polishing is performed while the work is polished while giving a temperature distribution to the polishing surface of the work.

[0024]

DESCRIPTION OF THE PREFERRED EMBODIMENTS As described above, in the present invention, the above problems can be solved by the polishing apparatus and the polishing method according to claims 1 to 14, and still more excellent effects can be provided. Things. These inventions will be described in the order of the claims. First, the invention according to claim 1 is described.
Gas is blown from the work holder to the back surface of the work, and gas is blown out from the gap between the work and the work holder so that the polishing liquid does not flow to the back surface of the work from the gap between the work and the work holder. This is a polishing apparatus that has been used.

FIG. 1 shows the first embodiment of the present invention. As shown in FIG. 1, the work 11 is pressed by the work holder 12 against the surface of the surface plate 13 with a certain pressure. And further, the back surface 11a of the work 11
Side is in contact with the work holding surface 12a of the work holder 12, but gas 14 is blown from the work holding surface 12a to the work back surface 11a side, and the work back surface 1a
The gas 14 blown to 1a reaches the periphery of the work 11 while traveling along the gap between the work holder 12 and the back surface 11a of the work, and blows out from the periphery of the work 11 to the outside through the gap between the work holder 12 and the work 11. Has become.

In this manner, there is no possibility that the etching polishing liquid or the polishing liquid disposed on the surface plate goes around the back side through the gap between the work back surface 11a and the work holder 12 due to capillary action or the like. This is because the gas 14 is blown out from the gap between the work back surface 11a and the work holder 12 and
This is because it is possible to prevent the polishing liquid from blowing into the gap by blowing it away.

The invention described in claim 1 can be applied not only to a case where an etching polishing liquid is used but also to a case where a normal polishing liquid is used. Even if a normal polishing liquid is used, applying the polishing liquid on the back side of the work requires an extra step such that the polishing liquid on the back side must be cleaned again when processing in the next step. It is important that the back side of the work is not contaminated by the polishing liquid because it is necessary.

FIG. 2B shows the gas 1
4 shows a state in which the polishing liquid 16 is blown outward by blowing out from the gap. Work 11
Is moved relative to the surface plate 13, and in particular, the work 1
On the surface in the direction in which the plate 1 and the surface plate 13 face each other, the polishing liquid 16 undulates and hits the work 11, and the polishing liquid 16 flows from this portion to the back side of the work 11.
However, the polishing liquid 16 is blown off by the gas 14 blown out from the gap between the work holder 12 and the back surface 11a of the work as shown in FIG. Intrusion of the liquid 16 can be prevented.

Next, a second aspect of the present invention is directed to a polishing apparatus using an etching polishing liquid, as described above, wherein gas is supplied from a work holder to the back surface of the work. This is a polishing apparatus which sprays and blows gas from a gap between the work and the work holder so that the etching polishing liquid does not flow to the back surface of the work from the gap between the work and the work holder. The invention according to claim 2 is characterized in that the polishing liquid according to claim 1 is used as an etching polishing liquid. In a polishing apparatus using the etching polishing liquid, the back surface of the work is locally localized by adopting such a configuration. It is characterized in that it can be prevented from being etched.

Particularly, semiconductor wafers such as gallium arsenide wafers and indium phosphorus wafers are often polished using an etching polishing liquid, but high precision flattening is required. It is sufficient to meet such demands. FIG. 1 shows the second aspect of the present invention, which basically operates in the same manner.

Next, the third aspect of the present invention will be described. According to the third aspect of the present invention, as described above, the polishing liquid is blown from the work holder to the back surface of the work, and the liquid is blown out from the gap between the work and the work holder. This is a polishing apparatus that does not go around the back surface of the work from the gap of the work holder. A feature of the invention according to claim 3 is that a liquid is sprayed on the back surface of the work instead of blowing the gas on the back surface of the work in the invention of claim 1 or 2.

In order to prevent the polishing liquid from entering the back side of the work, it is good to blow the gas as described above, but any liquid may be used as long as it has fluidity. Needless to say, it is good. The invention according to claim 3 is the one in which the gas of the invention according to claim 1 or 2 is made into a liquid, and the invention according to claim 3 produces a further special effect by using this as a liquid.

That is, in the case of such a mechanochemical polishing, ie, the polishing of the invention using an etching solution, the concentration of the etching polishing solution fluctuates as the chemical reaction is promoted, which has a subtle effect on the polishing accuracy. As a liquid to be sprayed from the back surface of the work, a solvent 26a which is a medium of an etching polishing liquid is used as shown in FIG.
b, for example, if a substance such as an acid is arranged, the solvent 26a of the etching polishing liquid blown out from the back surface mixes with the etching liquid 26b in the peripheral portion of the work 21 to be polished, and the polishing surface of the work 21 is always optimized. Thus, the etched polishing liquid 26 can be supplied.

In this way, the etching polishing liquid 26 supplied to the polishing surface side of the work 21 can always be maintained at the optimum concentration and the optimum PH, so that the polishing is accelerated or slowed down with time. Such a problem can be solved.

Next, the invention according to claim 4 will be described. According to a fourth aspect of the present invention, there is provided, as described above, means for imparting bending deformation to the work, and means for polishing the work to which bending deformation has been applied by the means. 4. The polishing apparatus according to any one of 1. to 3.,

As described above, in particular, in a polishing method using a mechanochemical polishing, that is, an etching polishing liquid, unlike a simple etching, a force applied to the work itself, such as tension, compression, shear, bending, plastic deformation, or the like, causes physical deformation of the part. In this process, the chemical properties are locally changed to promote the chemical reaction with the etching solution, and the polishing is completed.

Therefore, in this type of polishing, the stress applied to the work is a very important factor for the polishing. Specifically, the portion of the workpiece to which the stress is applied has a property that the chemical reaction is accelerated, and conversely, the non-strained portion where the stress is close to zero has a property that the chemical reaction is not accelerated. As described above, the promotion or non-promotion of the chemical reaction can be changed depending on the presence or absence of the stress. Therefore, by partially applying or not applying this stress to the work by design, the polishing of the undesired portion of the work is performed. Stopping and promoting polishing of the desired portion can be performed on the same plane.

The present invention is further embodied as a fourth aspect of the present invention, in which a bend is given to a work by means for imparting a bending deformation to the work, and stress is locally concentrated on the portion. Then, the chemical reaction is accelerated to perform polishing, and the chemical reaction is stopped in other portions so that the polishing does not proceed. FIG. 3 shows the fourth embodiment of the present invention.

FIG. 3 shows how the work 31 having a convex surface is polished according to the present invention, while the work 31 shown in FIG. 3A is held. FIG. 4B shows a state in which the workpiece 31 is pressed against the surface plate 33 and is being polished, learning the surface of the surface plate 33.

A spacer 35 is embedded in the work holding surface 32a of the work holder 32.
Thus, a portion where stress is locally applied to the polished surface of the work 31 and a portion where stress is not applied can be generated. The parts where the stress is applied locally in this way are accelerated by the chemical reaction and are selectively polished, whereas the parts that are not stressed are not accelerated by the chemical reaction, so that the polishing rate is reduced or not polished at all. It will be like that.

FIG. 4 shows this in terms of stress, and the spacer 45 shown in FIG. 4A has a height of, for example, about 0.1 mm to 1 mm. When the rectangular work 41 is arranged and pressed against the surface of the surface plate, a stress curve 48 as shown in FIG. In the stress curve 48, the dense portion 49 is subjected to a high stress while the sparse portion is subjected to a low stress, so that the polishing of the dense portion 49 is promoted and the sparse portion is sparse. It is possible to control such that the polishing of the portion that is present is delayed or not polished.

Next, the invention according to claim 5 will be described. The invention according to claim 5 is as shown in FIG. 5, but means for imparting a warp deformation to the work 51, and polishing the work 51 to which the warp deformation has been applied by the means. The polishing apparatus according to any one of claims 1 to 3, further comprising means for performing polishing. The basic concept of the invention of claim 5 is the same as that of the invention of claim 4, and the invention of claim 4 attempts to impart bending deformation.
In the described invention, the wafer 51 on the work holder 52 is warped by the spacer 55.

When the warping deformation is applied as described above, FIG.
A stress curve 58 as shown in (b) is generated, and polishing of a dense portion of the stress curve 58 is preferentially promoted, and polishing of a sparse portion is delayed. Therefore, it is possible to generate a part that is partially polished and a part that is not polished on the same plane.

Next, the invention according to claim 6 will be described. According to a sixth aspect of the present invention, there is provided, as described above, means for imparting torsional deformation to the work, and means for polishing the work to which the torsional deformation has been imparted by the means. 4. The polishing apparatus according to any one of 1. to 3.,
In short, the concept of the present invention is basically the same as that of the invention described in claim 4 or 5, and the characteristic point is that the deformation is torsion. FIG. 6 shows the invention of claim 6 with a diagram. Work 61 into work holder 6
2 is disposed with a spacer 65 interposed therebetween.

Next, the invention according to claim 7 will be described. According to a seventh aspect of the present invention, as described above, the means for imparting the deformation is a partial pressing force of the work by the gas from a gas outlet provided in the work holder. 7. The polishing apparatus according to any one of 6. FIG. 7 shows the invention of claim 7 with a diagram. In short, the present invention is to blow the gas 74, that is, high-pressure gas, from the work holding surface 72a of the work holder 72 as a means for deforming the work 71, and to prevent the polishing liquid from entering the back side of the work 71 as described above. Gas 7 given to the gap between the work 71 and the work holder 72
4 is an invention that can be the same gas.

In this way, one action is to use one gas to prevent the polishing liquid from spilling on the back side of the work, and another action is to use various gases on the work. It has the dual function of being able to apply stress.

Next, the invention according to claim 8 will be described. The invention according to claim 8 is the polishing apparatus according to claim 7, wherein the gas outlets are arranged so as to draw concentric circles on the work holding surface of the work holder. FIG. 8 shows the invention of claim 8 with a diagram.
The arrangement of the outlets 85 in such a manner as to draw concentric circles on the work holding surface 82a of the work holder 82 is to prevent the polishing liquid from flowing to the back side of the work from the entire periphery of the edge of the work. This is because the gas must be blown out uniformly.

For example, when there is only one hole in the gas outlet at the center, it is not always easy to blow out the gas from the entire circumference. In some cases, the gas blows out from a part of the peripheral portion. It is conceivable that the gas does not blow out from a part of the surface, or that a suction force acts. If this is the case, the effect of preventing the polishing liquid from flowing around the back surface of the work, which is an essential feature of the present invention, does not occur. It was done.

If the gas outlets 85 are arranged so as to form concentric circles on the work holding surface 82a, the gas can be blown out evenly to the peripheral portion of the work, so that the above-mentioned problem can be avoided. FIG. 9 shows another embodiment of the invention according to claim 8, in which the gas outlet 95 of the work holding surface 92a is not necessarily a single hole but a groove like a groove 95a is concentric. Needless to say, it may be a series of.

Next, the invention according to claim 9 will be described. The invention according to claim 9 is the polishing apparatus according to claim 7, wherein the gas outlets are arranged so as to draw a grid on a work holding surface of the work holder. The invention according to claim 9 is, for example, invented on the assumption that a rectangular work which is still used in recent years is polished, and in the case of a circular work, the gas outlets are drawn so as to draw concentric circles. However, in the case of a rectangular work, the work is preferably arranged so as to draw a grid on the holding surface of the work.

FIG. 10 and FIG. 11 show this.
It should be noted that the grids referred to here are not necessarily limited to those shown in FIG.
If the gas is dispersed on the work holding surface 102a, the gas outlet 115 of the work holding surface 112a of the work holder 112 as shown in FIGS. 11A and 11B may be used.

Next, the tenth aspect of the present invention will be described. The invention according to claim 10 can control the temperature of the gas blown out from the gas outlet as described above,
A polishing apparatus according to claim 8.
In the case of an etching polishing liquid, as described above, since a chemical reaction is involved in addition to a physical reaction between the polishing surface of the work and the polishing liquid, the chemical reaction is promoted or delayed. For the purpose, the temperature during polishing may be controlled.

In general, if it is desired to accelerate the polishing, the temperature during polishing should be increased, and if it is desired to delay the polishing, the temperature during polishing should be decreased. In the present invention, the temperature of the gas from the gas outlet is controlled for the temperature control.

Next, the eleventh aspect of the present invention will be described. An eleventh aspect of the present invention is a polishing apparatus using an etching polishing liquid as described above, wherein a work arrangement portion of a work holder is partially heated so as to generate a temperature distribution on a polishing surface of the work. This is a polishing apparatus that enables and controls the activity of the etching polishing liquid on the work polishing surface.

As described above, the polishing method and the polishing apparatus using the etching polishing liquid use not only the mechanical cutting force but also the chemical reaction and the etching for polishing. The activity of the reaction also affects the polishing rate.

The eleventh aspect of the present invention focuses on such a point, and does not locally heat or locally cool the work holding surface to partially reduce the activity of the etching polishing liquid. This is an invention capable of performing polishing control in which some portions existing on the same plane promote polishing, and other portions do not delay or prevent polishing.

For example, in the case of the semiconductor wafer 121 shown in FIG. 12, if there is a place where polishing is desired to be locally promoted, a structure in which heat is locally applied to the portion 127 of the work holder 122 is adopted. Only the portion 127 is heated to a high temperature to promote a chemical reaction and, consequently, an etching to enable polishing. For example, as such a heating method, an electric heating method or a method of locally irradiating a laser from the back surface side can be considered.

In the invention of claim 11, although not claimed, it is possible to control not only the heating but also the cooling to control the activity of the etching polishing liquid on the work polishing surface. Is a relative problem, the invention of claim 11 is intended to include both of them.

Next, the invention according to claims 12 to 14 will be described. The inventions according to Claims 12 to 14 are substantially the same inventions as the inventions of the polishing apparatus already described, and the category is a polishing method. According to a twelfth aspect of the present invention, there is provided a polishing method using an etching polishing liquid, wherein a gas is blown from the work holder to the back surface of the work, and the gas is blown out from a gap between the work and the work holder. This is a polishing method for polishing the work while preventing the liquid from flowing into the back surface of the work from a gap between the work and the work holder.

According to a thirteenth aspect of the present invention, there is provided a polishing method using an etching polishing liquid, wherein the workpiece is polished while imparting one or more of bending, warping, and twisting to the workpiece. This is a polishing method. According to a fourteenth aspect of the present invention, there is provided a polishing method using an etching polishing liquid, wherein the workpiece is polished while giving a temperature distribution to the polished surface of the workpiece.

Each of the inventions is a polishing method using an etching polishing liquid. The invention according to claim 12 avoids local undesired etching on the back side, and the invention according to claim 13 partially applies stress. The present invention aims at promoting or delaying the partial polishing of a work existing on the same plane by providing the same.

According to a fourteenth aspect of the present invention, there is provided a polishing method for locally polishing or delaying polishing of a workpiece on the same plane by controlling the activity of an etching polishing liquid while partially providing a temperature distribution to the surface of the workpiece. It is. Since the above has already been described in the invention of the polishing apparatus, it will not be described again here.

[0063]

As described above, according to the present invention, polishing, in particular, etching polishing, is achieved by blowing gas or liquid from the back side of the work, locally applying stress to the work, or locally applying a temperature distribution to the work. Has the effect of eliminating undesired polishing or promoting the desired local polishing to allow complete control of the polishing.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating the periphery of a work holder and a work of a polishing apparatus of the present invention.

FIG. 2 is a sectional view of a main part showing a method for supplying an optimum etching solution by the polishing apparatus of the present invention.

FIG. 3 is a cross-sectional view showing how the polishing apparatus of the present invention deforms a work to locally concentrate stress.

FIG. 4 is a plan view showing a relationship between a spacer and a stress curve appearing on a rectangular workpiece.

FIG. 5 is a plan view showing a relationship between a spacer and a stress curve appearing on a circular workpiece.

FIG. 6 is a plan view showing the position of a spacer that gives a torsion deformation to a rectangular work;

FIG. 7 is a cross-sectional view of a main part of a polishing apparatus in which a deformation of a work is given by a high-pressure gas and a polishing liquid is prevented from entering the back side of the work.

FIG. 8 is a work holder of the present invention in which a gas outlet is provided concentrically on a work holding surface.

FIG. 9 is a work holder of the present invention in which a groove-shaped gas outlet is provided on a work holding surface.

FIG. 10 is a work holder of the present invention in which a gas outlet is provided in a grid pattern on the work holding surface.

FIG. 11 shows another example of the work holder of the present invention in which a gas outlet is provided in a grid pattern on the work holding surface.

FIG. 12 is a work holder according to the present invention, which can be locally heated or cooled.

FIG. 13 is a sectional view of a main part showing a basic configuration of a conventional polishing apparatus.

FIG. 14 is a side sectional view of a work showing a problem of the conventional polishing.

FIG. 15 is a side sectional view of a work on which a back cover for preventing etching of a peripheral portion is arranged.

FIG. 16 is a side sectional view of a work showing a problem caused by disposing a back cover.

[Explanation of symbols]

10, 20, 30, 70 polishing apparatus 11, 21, 31, 41, 51, 61, 71, 121,
131 Work 12, 22, 32, 42, 52, 62, 72, 82, 9
2, 102, 112, 122 Work holder 14, 74 Gas 16 Polishing liquid 26a Liquid 26 Etching polishing liquid 12a, 32a, 72a, 82a, 92a, 102a,
113a Work holding surface 85, 95, 105, 115 Gas outlet

 ────────────────────────────────────────────────── ─── Continuing from the front page (72) Inventor Kozo Sakai 1-222-41 Ogi, Adachi-ku, Tokyo F-term in Nanotech Machines Co., Ltd. (reference) 3C058 AA07 AA09 AA12 AB04 AC01 AC03 AC04 BA02 BA05 BA08 BB04 CA01 CB05 CB06 DA12 DA17

Claims (14)

[Claims] A gas is blown from the work holder to the back surface of the work, and gas is blown out from a gap between the work and the work holder, so that the polishing liquid flows from the gap between the work and the work holder. Polishing device so that it does not go around the back of the machine. 2. A polishing apparatus using an etching polishing liquid, wherein a gas is blown from the work holder to the back surface of the work.
Gas is blown out from the gap between the work and the work holder, and the etching polishing liquid is discharged from the gap between the work and the work holder.
Polishing device that keeps it from wrapping around the back of the tool. 3. A liquid is sprayed from the work holder to the back surface of the work, and the liquid is blown out from the gap between the work and the work holder so that the polishing liquid flows from the gap between the work and the work holder. Polishing device so that it does not go around the back of the machine. 4. The method according to claim 1, further comprising: means for imparting a bending deformation to the work; and means for polishing the work to which the bending deformation has been applied by said means. The polishing apparatus according to the above. 5. The method according to claim 1, further comprising: means for imparting a warp deformation to the work; and means for polishing the work to which the warp deformation has been applied by said means. The polishing apparatus according to the above. 6. A means for imparting torsional deformation to a work;
The polishing apparatus according to any one of claims 1 to 3, further comprising: means for polishing the work in a state where the deformation of the torsion is given by the means. 7. A method according to claim 4, wherein said means for imparting deformation is a partial pressing force of said work by said gas from a gas outlet provided in said work holder. Polishing equipment. 8. A polishing apparatus according to claim 7, wherein said gas outlets are arranged so as to draw concentric circles on a work holding surface of said work holder. 9. The gas outlets are arranged so as to draw a grid on a work holding surface of the work holder.
A polishing apparatus according to claim 1. 10. The polishing apparatus according to claim 8, wherein a temperature of a gas blown from said gas outlet can be controlled. 11. A polishing apparatus using an etching polishing liquid, wherein a work arrangement portion of a work holder can be partially heated so as to generate a temperature distribution on a polishing surface of the work. A polishing apparatus for controlling the activity on the polishing surface. 12. A polishing method using an etching polishing liquid, wherein a gas is blown from a work holder to a back surface of a work, and a gas is blown out from a gap between the work and the work holder, so that the etching polishing liquid is discharged. A polishing method for polishing the work while preventing the work from going around the back surface of the work from the gap between the work and the work holder. 13. A polishing method using an etching polishing liquid, wherein the work is polished while giving one or more of bending, warping, and twisting to the work. 14. A polishing method using an etching polishing liquid, wherein the work is polished while giving a temperature distribution to a polished surface of the work.