JP2000091547A - Solid image pickup device and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a solid image pickup device capable of facilitating precise and rapid alignment of a flare are preventive board even if it is provided with a color filter. SOLUTION: In the picture element region 10 and the peripheral region thereof on the surface of a semiconductor chip 1, a color filter is provided with either colors selected from three elementary beam colors and additional complementary colors thereof per picture element in the picture element region 10, while unit picture element groups having the specific assembly of the selected colors are to be arrayed in the picture element region 10. In the peripheral region, the unit picture element groups containing the different color patterns from those drawn in the picture element region 10 are formed. In such a constitution, the boundary between both regions are discriminated according to the difference between these patterns for fixing the flare preventive boards 7, so that the incidence of flare emitting external beams into the picture element region 10 may be avoided.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state imaging device and a method of manufacturing the same, and more particularly, to a solid-state imaging device having a color filter and a flare preventing plate for improving image quality.

[0002]

2. Description of the Related Art In recent years, solid-state imaging devices using CCDs (Charge Coupled Devices) and the like have been widely used, and various improvements have been made for the purpose of improving image quality. One of the obstacles to improving image quality is flare. Hereinafter, the flare will be described.

As shown in FIG. 9, a solid-state imaging device is generally used in a state where a semiconductor chip 31 provided with a photoelectric conversion function by a photodiode is fixed to a box-shaped package 32. The external light 38 passes through the main lens (not shown) and the sealing glass 33 from above in FIG. 9 and enters the pixel region 40 where the photodiode is formed,
Photoelectric conversion is performed by the photodiode. The photoelectrically converted electric charge is, for example, CC in the case of a CCD type solid-state imaging device.
D transfers out of the pixel region, and is further transmitted to the outside through the inner lead 35 and the outer lead 34 as an electric signal for forming an image according to external light incident on the surface of the semiconductor chip 31.

In the package 32 of the solid-state imaging device, there are surfaces such as a peripheral region 41 surrounding the pixel region 40 and an inner lead 35 having a high light reflectance. The external light 39 reflected on these surfaces may be further reflected on the surface of the sealing glass 33 and incident on the photodiode in the pixel region 40. Such external light 39 generates flare.

[0005] As shown in FIG.
By installing the flare prevention plate 37 in the upper package 32, flare can be suppressed. Flare prevention plate 37
Needs to be installed in the package 32 so as to shield the external light 39 that causes flare while ensuring the incidence of the external light 38 that directly enters the pixel region 40. Therefore, the anti-flare plate 37 is fixed to the package 32 with its end positioned based on the boundary between the pixel region 40 and the peripheral region 41. The positioning of the flare prevention plate 37
The boundary between the pixel region 40 and the peripheral region 41 of the semiconductor chip 31 has been determined based on the internal structure of the semiconductor chip 31 such as the presence or absence of a photodiode.

[0006]

However, when a color filter is formed on a semiconductor chip for colorizing an image, the color filter itself limits the light transmittance, so that the boundary between the pixel region and the peripheral region is limited. This makes it difficult to make a distinction, and it is difficult to accurately and quickly position the anti-flare plate. In particular, in order to automate the incorporation of the semiconductor chip and other members into the package, it is desirable to optically detect the boundary and position the anti-flare plate based on the detected boundary.

SUMMARY OF THE INVENTION It is an object of the present invention to solve the above-mentioned problems and to provide a solid-state image pickup device capable of easily and accurately positioning a flare preventing plate even with a color filter, and a method of manufacturing the same. .

[0008]

In order to achieve the above object, a solid-state imaging device according to the present invention includes a pixel area in which a photodiode is arranged for each pixel, and a peripheral area adjacent to the pixel area, A semiconductor chip in which a color filter is formed in the pixel region and the peripheral region, a housing for housing the semiconductor chip, and a light beam that directly reaches the pixel region on the opening side of the housing relative to the semiconductor chip. Positioned so that the incidence of light rays other than the light rays on the pixel area is suppressed while ensuring the incidence,
A flare prevention plate fixed to the housing, wherein the color filter is provided in the pixel region, for each of the pixels, any one color selected from three primary colors of light and complementary colors of the three primary colors, and Constituted by the pixel,
A unit pixel group having a predetermined combination of the colors is formed so as to be arranged in the pixel region, and in the peripheral region, the pattern of the color drawn in the pixel region by the arrangement of the unit pixel group. Are characterized in that they are formed so as to include ranges having different patterns.

According to another aspect of the present invention, there is provided a method for manufacturing a solid-state imaging device, comprising: a semiconductor chip having a pixel region in which a photodiode is disposed and a color filter formed in a peripheral region adjacent to the pixel region; In the housing, and fixing the anti-flare plate to the housing on the opening side of the housing relative to the semiconductor chip, wherein the color filter is provided for each of the pixels in the pixel region. Any of three colors selected from the three primary colors of light and the complementary colors of the three primary colors is provided, and a unit pixel group constituted by the pixels and having a predetermined combination of the colors is arranged in the pixel region. Forming
In the peripheral region, a region having a pattern different from the color pattern drawn in the pixel region by the arrangement of the unit pixel group is formed to be included, and the anti-flare plate is formed based on the range. In addition, while securing the incidence of the light beam that directly reaches the pixel region, the light source device is positioned and fixed to the housing such that light beams other than the light beam are prevented from entering the pixel region.

According to the present invention, by making the color filter patterns different between the pixel area and the peripheral area, it is easy to use this difference to determine the boundary between the two areas, and to position the anti-flare plate. Can be performed accurately and quickly. It is also possible to optically detect the boundary and automatically position and attach the anti-flare plate based on the data.

[0011]

As described above, according to the present invention,
It becomes easy to align the flare prevention plate with the semiconductor chip so that its function is exhibited. The anti-flare plate is typically aligned such that the ends of the anti-flare plate approximately coincide with the above boundaries. The coincidence between the end portion of the anti-flare plate and the above boundary includes some error as long as the purpose of the anti-flare plate to prevent the flare without inhibiting the incidence of external light rays to the pixel area is achieved. It does not matter.

In the present invention, it is preferable that the area in the peripheral area having a pattern different from the pixel area is formed so as to be in contact with the boundary with the pixel area. This is because the boundary can be easily determined.

Further, in the present invention, the color filter includes a spectral transmission characteristic in which a three wavelength region corresponding to three primary colors of light is divided into a high transmittance region and a low transmittance region in both the pixel region and the peripheral region. It is preferable to configure by combining colored films having the following formulas. According to this preferred example, the flare prevention plate can be easily positioned without separately forming a film.

Further, according to the present invention, if the above range is formed by changing the patterning of any one of the coloring films in the pixel region and the peripheral region, the patterning of the coloring film in the pixel region and the peripheral region can be greatly improved. It can be implemented without changing to.

In the present invention, it is preferable that the above-mentioned range is formed by changing the patterning of the colored film in which at least the red wavelength region has a low transmittance region in the pixel region and the peripheral region. Normally, alignment is performed while checking the position of the anti-flare plate using a camera using a solid-state imaging device, but the sensitivity of the photodiode that receives light in the solid-state imaging device is relatively good in the red wavelength region. In addition, this is advantageous for optical detection of the boundary.

Further, in the present invention, it is preferable that the flare prevention plate is positioned by determining the above boundary using a light source of any one of the three primary colors of light. This is because it becomes easier to recognize the difference in pattern than using a white light source.

Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.

FIG. 1 is a perspective view showing one embodiment of the solid-state imaging device of the present invention. FIG. 2 is a schematic cross-sectional view of the solid-state imaging device. In this solid-state imaging device, a semiconductor chip 1 is fixed to an inner bottom portion of a box-shaped resin package 2, and an opening of the package 2 is sealed by a sealing glass 3. The semiconductor chip 1 is electrically connected to the outside via a predetermined number of inner leads 5 arranged inside the package and a predetermined number of outer leads 4 arranged outside the housing.

Above the semiconductor chip 1, a flare prevention plate 7 is fixed inside the package 2. The flare preventing plate 7 is provided with an opening having a shape substantially corresponding to the shape of the pixel region 10 of the semiconductor chip 1, and the opening is fixed so as to be located above the pixel region. The flare prevention plate 7 ensures that the external light 8 that directly enters the pixel region 10 is absorbed, while absorbing the external light 9 that is reflected inside the package and tries to reach the pixel region 10. For fixing the flare prevention plate 7 performed after the positioning described later, for example, an ultraviolet-curable adhesive can be suitably used. Although not particularly limited, a material having a high light absorption coefficient, for example, a material obtained by performing a matte chromium plating on stainless steel is preferable as the material of the anti-flare plate 7.

On the surface of the semiconductor chip 1, a pixel region 10 in which pixels in which photodiodes are formed is arranged vertically and horizontally.
And a peripheral area 11 in which output circuits, wirings, and the like are arranged around the pixel area. Each pixel is formed with one photodiode and one charge transfer unit. On the other hand, the peripheral area 11 is, as shown in FIG.
It is arranged in the shape of a frame around the boundary 0 through the boundary 12. Depending on the type of the solid-state imaging device, a memory unit may be arranged in a part of the peripheral area 11.

The color filter is formed not only in the pixel area but also in the peripheral area. Transfer electrode on silicon wafer,
In a normal manufacturing process of a semiconductor chip in which a flattening film, a color filter and other film members for forming a solid-state imaging device are formed and then cut into individual chips, a color filter may be formed also in a peripheral region. This is because it is preferable to form a color filter accurately and efficiently.

FIG. 4 shows an example of a color filter pattern in the pixel region 10 and the peripheral region 11. As shown in FIG. 4, in the pixel region 10, a color filter is provided for each pixel so that a predetermined color selected from three primary colors of light and its complementary color is provided so that transmitted light of a predetermined color reaches the photodiode. Has been granted. In the example shown in FIG. 4, the color filters are yellow (YE) and cyan (C
Y), any color selected from magenta (MG) and green (GR).

In the pixel area 10, the color filter is composed of a unit pixel group 15 having one set of each of the four color pixels as a set in order to secure the reproducibility of the color of the image for each minute area. It is configured to be arranged in. In addition,
Here, for convenience, four pixels have been described as a unit pixel group. However, the present invention is not limited to this.
It is sufficient to grasp an appropriate number of pixels as a unit pixel group.

As described above, the arrangement of the colors of the pixels is determined by the predetermined pattern. This pattern is specifically realized by patterning a colored film constituting a color filter. In the example shown in FIG. 4, the color filters are each formed of a colored film of three colors colored yellow, cyan, and magenta. Green is
As can be seen from the spectral transmittance curves of the respective colored films shown in FIG. 8, they can be obtained by laminating a yellow colored film and a cyan colored film.

Also in the peripheral region 11, the color filter is basically formed using the same color film as the color film used for forming the color filter in the pixel region.
The color filters of the pixel region 10 and the peripheral region 11 are
This is because they can be formed by the same process using the same kind of material.

However, in the peripheral region 11, the color filters formed have different color arrangements by adopting different patterns while using the same kind of colored film as the pixel region 10. In the example shown in FIG. 4, among the three types of colored films, the yellow colored film and the magenta colored film are formed by the same type of pattern as the pixel region. On the other hand, the cyan colored film is formed over the entire peripheral region 11 unlike the pixel region.

As a result, as shown in FIG. 4 with characters attached to each pixel, not only the cyan (CY) and green (GR) pixels on which a cyan colored film is originally formed, but also other pixels Until a cyan colored film is formed,
The pixel of yellow (YE) changes to a pixel of a combined color (YE + CY) of yellow and cyan, and the pixel of magenta (MG) changes to a pixel of a combined color (MG + CY) of magenta and cyan. For comparison with FIG. 4, FIG. 6 shows the arrangement of pixel colors when the same coloring film patterning as that of the pixel region is applied to the peripheral region. In FIG. 6, the unit pixel groups 25 are arranged vertically and horizontally not only in the pixel region 20 but also in the peripheral region 21 surrounding the pixel region 20 via the boundary 22.

As shown in FIG. 8, the cyan colored film is
It absorbs light in the red wavelength range well. Therefore, by changing the patterning of the cyan colored film between the pixel region and the peripheral region, the pattern drawn by a pixel having a low transmittance of light in the red wavelength region also differs. FIG. 5 shows pixels having low transmittance in the red wavelength region in the pattern shown in FIG. 4 by hatching. On the other hand, FIG.
In the pattern shown in FIG. 6, pixels having low transmittance in the red wavelength region are similarly indicated by hatching.

As apparent from a comparison between FIGS. 5 and 7, by partially changing the patterning of the colored film as described above, the boundary 1 between the pixel region 10 and the peripheral region 11 is changed.
2 can be clearly indicated by the difference in transmittance in the red wavelength region. As shown in FIG. 7, the image area 20 and the peripheral area 2
If the pixel 2 and the pixel 2 are formed of a colored film to which the same patterning is applied, the boundary 22 between the two regions cannot be confirmed by the pixel pattern.

The pixel pattern of the present invention is not limited to the patterns shown in FIGS. For example, the patterning of two or more colored films may be different in the two regions, and the patterning of the colored film may be different only in a part of the peripheral region, not in the entire region.
It goes without saying that the combination of colors of the colored films is not limited to the above example.

By applying the pattern as described above, the boundary 12 between the pixel region 10 and the peripheral region 11
Is accurately and easily determined, and the position where the anti-flare plate is fixed is determined based on the position of the boundary 12.

There is no particular limitation on the method for determining the position of the boundary 12 between the two regions. The boundary 12 may be determined visually, or may be determined by measuring the reflectance of a light beam or the like for each predetermined area. However, whichever method is used, the boundary can be easily determined using a light source that emits light in a specific wavelength range. In the example described above, the boundary is defined by the difference in transmittance (or the difference in reflectance) in the red wavelength region as shown in FIG. 5, so that the light source in the red wavelength region is preferable.

The light source that emits light in such a specific wavelength range is not particularly limited, but is preferably an LED. As an LED that emits red light, for example, G
The LED using aAlAs has a high luminance and an emission wavelength (66).
0 nm). If such a light source is used together with a semiconductor chip on which a color filter having a pattern as described above is formed, the flare prevention plate can be automatically positioned.

In FIG. 4, since a cyan colored film is formed over the entire peripheral circuit 11, it is preferable to position the anti-flare plate using red light as a light source. For example, a magenta colored film is formed over the entire area. In some cases, it is preferable to use a light source of about 550 nm. This means that it is preferable to use a light source corresponding to a wavelength region where the transmittance of the colored film formed over the entire peripheral region is low.

The other manufacturing steps in the present invention may be performed by a conventionally practiced method. For example, the fixation of the semiconductor chip to the package is performed by silver paste or the like, and the inner leads connecting the package and the semiconductor chip are implemented by using, for example, an aluminum wire.

The structure inside the semiconductor chip in the solid-state imaging device of the present invention is not particularly limited. For example, as for the color filter, as long as the object of the present invention is achieved, any combination of colors, constituent materials and the like can be adopted. As the colored film forming the color filter, a film in which a pigment is dispersed in a transparent resin may be used, or a film in which a material to be dyed is dyed with a dye may be used. As in the case of green in the color filter, a colored film may be laminated and used to obtain a predetermined color. In particular, in the case of stacking colored films by dyeing, it is preferable to provide an isolation layer between the colored films in order to prevent color mixing.

The present invention is not limited to a CCD solid-state imaging device, but can be applied to a MOS solid-state imaging device. The shape, material, and the like of the anti-flare plate in the solid-state imaging device of the present invention are not particularly limited, and include all members installed for the purpose of preventing flare. The housing (package) for housing the semiconductor is not limited to the illustrated embodiment.

[0038]

As described above, according to the present invention, the range in which the color filter has a pattern different from the color pattern drawn in the same region in the peripheral region due to the arrangement of the unit pixel group in the pixel region. By being formed so as to be included, it is possible to provide a solid-state imaging device in which accurate and quick positioning of the anti-flare plate is easy even with a color filter, and a method of manufacturing the same.

[Brief description of the drawings]

FIG. 1 is a perspective view illustrating one embodiment of a solid-state imaging device of the present invention.

FIG. 2 is a cross-sectional view illustrating one embodiment of the solid-state imaging device of the present invention.

FIG. 3 is a diagram illustrating an example of an arrangement of a pixel region and a peripheral region on a surface of a semiconductor chip.

FIG. 4 is a diagram illustrating an example of an arrangement of colors of pixels of a color filter in a pixel region and a peripheral region.

FIG. 5 is a diagram showing a region where the transmittance of a red region is low in the color filter shown in FIG. 4 with hatching;

FIG. 6 is a diagram showing an example of the arrangement of the colors of the pixels of a color filter provided with the same pattern in a pixel region and a peripheral region.

FIG. 7 is a diagram showing a region where the transmittance of a red region is low in the color filter shown in FIG. 6 with hatching.

FIG. 8 is a diagram showing an example of the spectral transmittance of a colored film constituting the color filter of the present invention.

FIG. 9 is a cross-sectional view illustrating a conventional solid-state imaging device.

FIG. 10 is a cross-sectional view illustrating an example in which a flare prevention plate is arranged in the solid-state imaging device illustrated in FIG. 9;

[Explanation of symbols]

 Reference Signs List 1 semiconductor chip 2 package 3 sealing glass 7 anti-flare plate 10 pixel region 11 peripheral region 12 boundary 15 unit pixel group

Continued on the front page (72) Inventor Norihisa Kitamura 1-1, Sachimachi, Takatsuki-shi, Osaka Prefecture Inside Matsushita Electronics Corporation (72) Inventor Hirotada Kodama 1-1, Sachimachi, Takatsuki-shi, Osaka Matsushita Electronics Corporation F-term (reference) 4M118 AA05 AB01 GC09 GC14 HA02 HA03 HA14 HA23 HA24

Claims (11)

[Claims] A semiconductor chip including a pixel region in which a photodiode is arranged for each pixel and a peripheral region adjacent to the pixel region, wherein a color filter is formed in the pixel region and the peripheral region; A housing for housing the chip, and on the opening side of the housing relative to the semiconductor chip, the incidence of light beams that directly reach the pixel region is suppressed, while the incidence of light beams other than the light beam on the pixel region is suppressed. And a flare prevention plate fixed to the housing so that the color filter is selected from three primary colors of light and complementary colors of the three primary colors for each pixel in the pixel region. And a unit pixel group formed by the pixels and having a predetermined combination of the colors is formed so as to be arranged in the pixel region. Wherein the peripheral region is formed so as to include a range having a pattern different from the color pattern drawn in the pixel region by the arrangement of the unit pixel groups. . 2. The solid-state imaging device according to claim 1, wherein the range is in contact with a boundary with the pixel region. 3. A color filter having a spectral transmission characteristic in which, in both the pixel region and the peripheral region, three wavelength regions corresponding to the three primary colors are divided into a high transmittance region and a low transmittance region. The solid-state imaging device according to claim 1, wherein the solid-state imaging device is configured by combining films. 4. The solid-state imaging device according to claim 3, wherein the range is formed by changing the patterning of any one of the colored films in the pixel region and the peripheral region. 5. The pixel according to claim 3, wherein the range is formed by changing a patterning of a colored film having a low transmittance region at least in a red wavelength region in the pixel region and the peripheral region. Solid-state imaging device. 6. A step of housing a semiconductor chip in which a color filter is formed in a pixel region in which a photodiode is arranged and a peripheral region adjacent to the pixel region in a housing, and an opening in the housing rather than the semiconductor chip. Fixing the anti-flare plate to the housing on the side, wherein the color filter is provided with any color selected from three primary colors of light and complementary colors of the three primary colors for each pixel in the pixel region. And a unit pixel group formed by the pixels and having the predetermined combination of colors is formed so as to be arranged in the pixel region. In the peripheral region, the pixel region is formed by the arrangement of the unit pixel group. Formed so as to include a range having a pattern different from the pattern of the color drawn in, and the anti-flare plate is formed based on the range. Solid-state imaging, wherein the positioning is fixed so as to suppress the incidence of light other than the light rays to the pixel area while securing the incidence of light rays that directly reach the pixel area, and fixed to the housing. Device manufacturing method. 7. The method according to claim 6, wherein the range is formed so as to be in contact with a boundary with the pixel region. 8. A color filter having a spectral transmission characteristic in which, in both the pixel region and the peripheral region, three wavelength regions corresponding to the three primary colors are divided into a high transmittance region and a low transmittance region. The method for manufacturing a solid-state imaging device according to claim 6, wherein the method is configured by combining films. 9. The method according to claim 8, wherein the range is formed by changing the patterning of one of the colored films in the pixel region and the peripheral region. 10. The solid-state imaging device according to claim 8, wherein the range is formed by changing the patterning of a colored film having at least a red wavelength region as a low transmittance region in the pixel region and the peripheral region. Device manufacturing method. 11. The flare prevention plate is positioned by determining a boundary between the pixel region and the peripheral region using a light source of any one of the three primary colors.
10. The method for manufacturing a solid-state imaging device according to any one of 10 above.