JP2000090860A - Image forming device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an image forming device capable of suppressing dielectric breakdown and holding an excellent image for long time. SOLUTION: This device is a flat type image forming device constituting a vacuum container by an electron source substrate 1 having a plurality of electron emission elements 5 and an anode substrate 2 having a fluorescent film 10. By this device, an insulating layer 12b is formed on wiring connected at both the ends of the electron emission elements 5. Further, the surface of the electron source substrate 1 including this insulating layer 12b is coated with an anti-static layer 13.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an image forming apparatus using an electron source having a plurality of electron-emitting devices.

[0002]

2. Description of the Related Art Conventionally, as an image forming apparatus using an electron-emitting device, an electron source substrate on which a large number of cold cathode electron-emitting devices are formed and an anode substrate provided with a transparent electrode and a phosphor are opposed in parallel to each other. 2. Description of the Related Art A flat-type electron beam display panel that has been exhausted is known. In such an image forming apparatus, the one using a field emission type electron emitting element is, for example,
I. Brodie, “Advanced techno
logy: flat cold-cathode CR
Ts ", Information Display, 1
/ 89, 17 (1989). Also, those using the surface conduction electron-emitting device, for example,
It is disclosed in US Pat. No. 5,066,883 and the like.

A flat type electron beam display panel is a cathode ray tube (cathode ray tube) which is widely used at present.
e: CRT) It is possible to reduce the weight and increase the screen size as compared with a display device, and furthermore, a flat display panel using a liquid crystal, a plasma display, and an electroluminescent display.
As compared with other flat display panels such as displays, higher brightness and higher quality images can be provided.

FIGS. 7 and 8 are schematic structural views of an example of a conventional electron beam display panel. Here, FIG. 8 is a sectional view taken along the line AA ′ in FIG. The structure of the conventional electron beam display panel shown in FIGS. 7 and 8 will be described in detail. In the figures, reference numeral 1 denotes a rear plate as an electron source substrate, 2 denotes a face plate as an anode substrate, and 3 denotes an outer frame. Constitutes a vacuum envelope. Reference numeral 4 denotes a glass substrate as a base of the rear plate, 5 denotes an electron-emitting device, and 6a and 6b denote electrodes for applying a voltage to the electron-emitting device 5. 7a
(Signal electrode) and 7b (scanning electrode) are wiring electrodes, which are connected to the electrodes 6a and 6b, respectively. Reference numeral 8 denotes a glass substrate serving as a base of the face plate, 9 denotes a transparent electrode (anode electrode), and 10 denotes a phosphor.

In order to form an image on the electron beam display panel, a predetermined voltage is sequentially applied to the signal electrodes 7a and the scanning electrodes 7b arranged in a matrix, so that a predetermined electron emission located at the intersection of the matrix is performed. The element 5 is selectively driven, and the emitted electrons are irradiated on the phosphor 10 to obtain a bright spot at a predetermined position. Note that a high voltage is applied to the transparent electrode 9 so as to have a positive potential with respect to the electron-emitting device 5 in order to accelerate the emitted electrons and obtain a bright spot with higher luminance. Here, the applied voltage is a voltage of several hundred V to several tens kV, depending on the performance of the phosphor. Therefore, the distance d between the rear plate 1 and the face plate 2 is set so that the applied voltage does not cause vacuum insulation breakdown (that is, discharge).

[0006]

In order to realize a high definition display panel, the element pitch on the rear plate side is reduced and the distance d between the rear plate and the face plate is reduced to suppress the beam spread. It is necessary to reduce the spot diameter. The vacuum breakdown voltage (hereinafter, discharge voltage) is uniquely determined by the electric field strength. If the distance d between the rear plate and the face plate is reduced to １ ／, the discharge voltage is reduced to １ ／. However, since the luminance per single element in the display panel depends on the energy intensity of incident electrons, the same luminance is not always obtained even with the same electric field intensity. That is, in the case of a device having the same electron emission efficiency, it is necessary to apply the same anode potential in order to obtain the same brightness as when the distance d is halved. The potential cannot be increased carelessly.

In order to reduce the cost, it is advantageous to form the wiring and the like by a thick film printing method. However, the wiring formed by the thick film printing method has larger irregularities than the wiring formed by the sputtering method or the like, and there is also a problem that an electric field is concentrated on these protrusions and a discharge occurs from this point.

As described above, in the case where the distance d between the rear plate and the face plate is reduced and the wiring or the like is formed by the thick film printing method, the discharge voltage decreases, and the voltage margin that can be applied to the anode electrode is reduced. This leads to a decrease in emission current with respect to the device current flowing through the surface conduction electron-emitting device, and it has been difficult to manufacture an electron-emitting device and an image forming apparatus with high brightness and high electron emission efficiency.

[0009]

Means for Solving the Problems The present invention has been made intensively to solve the above-mentioned problems, and has the following configuration.

That is, the image forming apparatus of the present invention comprises at least an electron source substrate having a plurality of electron-emitting devices, and an image forming member which forms an image by emitting light by irradiation of electrons emitted from the electron-emitting devices. A flat-type image forming apparatus constituting a vacuum vessel by the anode substrate having,
An insulating layer is formed on a plurality of wirings connected to both ends of the electron-emitting device, and the surface of the electron source substrate including the insulating layer is covered with an antistatic layer.

As the electron-emitting device, a cold cathode electron-emitting device can be preferably used, and a surface conduction electron-emitting device is particularly preferably used. Further, a phosphor is preferable as the image forming member.

A polyimide resin or a polybenzimidazole resin can be preferably used for an insulating layer formed on the wiring for preventing discharge from the wiring convex portion.
Those having photosensitivity can be preferably used.

The required characteristics of the insulating layer formed from these polymer resins are as follows. (1) Having heat resistance to heat treatment during the process (2) Good insulation (3) Good step coverage for wiring (4) Suitable for application of fine processing technology (5) High Emission gas is small enough to maintain vacuum

Further, the material of the antistatic layer coated on the electron source substrate to suppress charge-up and prevent discharge is made of graphite, zinc oxide, barium sulfate / tin oxide, aluminum borate / aluminum borate. Tin oxide, ATO, IT
Conductive fine particles such as O can be preferably used.

The required characteristics of the antistatic layer formed from these conductive fine particles are as follows. (1) High dispersibility in a solvent (2) Stable electric resistance during the process (resistivity at this time is 10 ⁻³ to 10 ⁻¹ Ω · cm)

According to the present invention, a very high-definition and clear image can be displayed, and a large-screen and low-cost flat-type image forming apparatus can be realized.

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, preferred embodiments of the present invention will be described.

FIGS. 1 and 2 are schematic views showing an example of the configuration of an image forming apparatus according to the present invention, and FIG. 2 is a sectional view taken along the line AA 'in FIG.

In FIG. 1, 1 is a rear plate which is an electron source substrate, 2 is a face plate which is an anode substrate, 3 is an outer frame, 4 is a substrate which is a base of the rear plate 1, 5 is an electron-emitting device, 6a and 6b is an electrode for applying a voltage to the electron-emitting device 5, 7a (signal electrode) and 7b (scanning electrode) are wiring electrodes connected to the electrodes 6a and 6b, respectively, and 8 is a base of the face plate 2. Substrate, 9
Is a transparent electrode, 10 is a phosphor, 12b is an insulating layer formed on the wiring electrodes 7a and 7b, and 13 is a rear plate 1.
An antistatic layer coated thereon.

The rear plate 1 has a large number of electron-emitting devices 5
Are arranged on the substrate 4, and as the substrate 4,
Quartz glass, blue plate glass, glass with a reduced content of impurities such as Na, glass substrate in which SiO ₂ is laminated on blue plate glass, ceramics such as alumina, and Si substrate can be used. In the case of constituting, a soda lime glass, a potassium-substituted glass, a soda lime glass, a liquid phase growth method, a sol-gel method, a sputter method, etc.
_The glass substrate laminated with ₂ is relatively low cost,
It can be preferably used.

Here, a surface conduction electron-emitting device is used as the electron-emitting device 5. FIG. 3 is an enlarged schematic view showing a surface conduction electron-emitting device used in the image forming apparatus shown in FIGS. In FIG. 3, the same portions as those shown in FIGS. 1 and 2 are denoted by the same reference numerals as those in FIGS.

In FIG. 3, 31 is a conductive film, 32 is an electron emitting portion, and 12a is an interlayer insulating layer for electrically separating the wiring electrode 7a and the wiring electrode 7b. As the conductive film 31, for example, a fine particle film composed of conductive fine particles having a thickness in the range of 10 ° to 500 ° is preferably used. As a material for forming the conductive film 31, various conductors or semiconductors can be used. In particular, Pd, Pt, A
Pd, Pt, Ag, Au, PdO, etc. obtained by heating and baking an organic compound containing a noble metal element such as g or Au are preferably used. The electron-emitting portion 32 is formed by a high-resistance crack formed in a part of the conductive film 31, and contains therein an element of a material forming the conductive film 31 and carbon,
In some cases, conductive fine particles having a particle size in the range of several to several hundreds containing a carbon compound are present.

As the electrodes 6a and 6b, general conductive materials can be used. This is, for example, Ni, Cr, A
metals or alloys such as u, Mo, W, Pt, Ti, Al, Cu, Pd and Pd, Ag, Au, RuO ₂ , Pd-A
It can be appropriately selected from a printed conductor composed of a metal such as g or a metal oxide and glass, a transparent conductor such as In ₂ O ₃ —SnO ₂ , and a semiconductor conductor material such as polysilicon.

Various arrangements of the electron-emitting devices 5 can be employed. The arrangement described here is a so-called simple matrix arrangement, in which a plurality of electron-emitting devices 5 are arranged in a matrix in the X and Y directions, and a plurality of electron-emitting devices 5 arranged in the same row are arranged. One electrode 6a is commonly connected to a wiring electrode 7a in the X direction, and the other electrode 6b of the plurality of electron-emitting devices 5 arranged in the same row is connected to a wiring electrode 7b in the Y direction.
Are connected in common.

X direction wiring electrode 7a, Y direction wiring electrode 7b
Both can be formed of a conductive metal or the like formed using a vacuum deposition method, a printing method, a sputtering method, or the like. The material, thickness, and width of the wiring are appropriately designed. In addition, interlayer insulating layer 1
2a is a vacuum deposition method, printing method of glass, ceramic, etc.,
This is an insulator layer formed by using a sputtering method or the like. For example, it is formed in a desired shape on the entire surface or a part of the substrate 4 on which the X-direction wiring electrodes 7a are formed.
The film thickness, material, and manufacturing method are appropriately set so as to withstand the potential difference at the intersection of the wiring electrode 7b and the Y-direction wiring electrode 7b.

The X-direction wiring electrode 7a is connected to a modulation signal generating means (not shown) for modulating each row of the electron-emitting devices 5 arranged in the X direction according to an input signal. on the other hand,
A scanning signal applying unit (not shown) for applying a scanning signal for selecting a row of the electron-emitting devices 5 arranged in the Y direction is connected to the Y-direction wiring electrode 7b. The driving voltage applied to each electron-emitting device is supplied as a difference voltage between a scanning signal and a modulation signal applied to the device.

In the above configuration, individual elements can be selected and driven independently by simple matrix driving.

In addition, each of a large number of electron-emitting devices arranged in parallel is connected at both ends, a large number of rows of electron-emitting devices are arranged (referred to as a row direction), and a direction perpendicular to the wiring (column direction) is used. ), In which a control electrode (also referred to as a grid) disposed above the electron-emitting device controls and drives electrons from the electron-emitting device. It is not limited by the arrangement.

The face plate 2 is an anode substrate having a transparent electrode 9 and a phosphor film 10 formed on the surface of a substrate 8.
It goes without saying that the substrate 8 is transparent,
The one having the same mechanical strength and thermophysical properties as the rear plate substrate 4 is preferable, and when configuring a large screen display panel,
A blue plate glass, a potassium glass, a glass substrate in which SiO ₂ is laminated on a blue plate glass by a liquid phase growth method, a sol-gel method, a sputtering method, or the like can be preferably used. A positive high voltage Va is applied to the transparent electrode 9 from an external power supply (not shown). As a result, the electrons emitted from the electron-emitting device 5 are attracted to the face plate 2, accelerated, and irradiated on the phosphor film 10. At this time, if the incident electrons have energy sufficient to cause the phosphor film 10 to emit light, a bright spot can be obtained there.

Generally, in a phosphor used in a CRT for a color TV, electrons are accelerated and irradiated with an acceleration voltage of several kV to several tens kV to obtain good brightness and color. C
Since the phosphor for RT has very high performance while being relatively inexpensive, it can be preferably used in the present invention. As a general technique, the phosphor film 10 is used.
A thin aluminum film called a metal back (not shown) may be formed on the surface of the substrate. The purpose of providing the metal back is to improve the brightness by mirror-reflecting the light emitted from the phosphor toward the rear plate 1 toward the face plate 2, and to reduce the negative ions generated in the envelope (vacuum container). Protection of the phosphor from damage due to collision of the electron beam, etc., but it can also function as an electrode for applying an electron beam acceleration voltage. In this case, the transparent electrode 9 may not be particularly necessary. The present invention can be used in any case.

The outer frame 3 is connected to the rear plate 1 and the face plate 2 to form an envelope. The connection between the outer frame 3 and the rear plate 1 and the face plate 2 depends on the material constituting the rear plate 1, the face plate 2 and the outer frame 3, but when glass is used as an example, the connection is made using a glass frit. You can wear it.

Since the electrons emitted from the electron-emitting device 5 have a finite divergence angle, if the distance d between the rear plate 1 and the face plate 2 is too large, overlapping with adjacent pixels occurs, causing color mixing and contrast reduction. May occur. Therefore, it is desirable to set a distance d of several hundred μm to several mm for Va of several kV to several tens kV.

X direction wiring electrode 7a and Y direction wiring electrode 7
The insulating layer 12b formed on the wiring electrode b is formed for the purpose of preventing self-sustained discharge from the convex portion of the wiring electrode. Suitable materials for the insulating layer 12b include a polyimide resin and a polybenzimidazole resin, and the pattern can be formed by photolithography, a thick film printing method, or the like. Some of these materials have photosensitivity to the material itself. When the insulating layer 12b is formed by photolithography, a normal resist process is not required, the process is simple, and the cost is advantageous. It is. The required properties of the insulating layer 12b include heat resistance, high insulation properties, step coverage, fine workability, and low emission gas properties.

The antistatic layer 13 coated on the rear plate 1 is formed for the purpose of suppressing charge-up of the substrate 4 and preventing spark discharge between the rear plate 1 and the face plate 2. Materials suitable for the antistatic layer 13 include:
Examples include conductive fine particles such as graphite, zinc oxide, barium sulfate / tin oxide, aluminum borate / tin oxide, ATO, and ITO. The film is easily formed by spin coating, aero coating, or the like. Necessary characteristics of the antistatic layer 13 include high dispersibility in a solvent and electrical stability. The resistance value of the antistatic layer 13 is appropriately set within a range that does not cause a short circuit between wirings.

[0035]

EXAMPLES Hereinafter, the present invention will be described in detail with reference to specific examples, but the present invention is not limited to these examples, and each element within a range in which the object of the present invention is achieved. This also includes those in which substitutions or design changes have been made.

[Embodiment 1] The basic configuration of an image forming apparatus according to the present embodiment is the same as that shown in FIGS. 1 and 2, and FIG. 4 shows an overall view. 4, the same parts as those shown in FIGS. 1 and 2 are denoted by the same reference numerals. In the figure, 41 is a metal back.

FIGS. 5 and 6 show a method of manufacturing the image forming apparatus according to this embodiment. Hereinafter, a basic configuration and a manufacturing method of the image forming apparatus will be described with reference to FIGS. Although FIGS. 5 and 6 show the manufacturing process in the vicinity of a small number of electron-emitting devices for simplicity, this embodiment is directed to an image forming apparatus in which a large number of surface conduction electron-emitting devices are arranged in a simple matrix. This is an example.

Step-a The device electrodes 6a and 6b were formed on the washed blue glass substrate by offset printing. The thick film paste material used here is a MOD paste and the metal component is Pt.
After printing, drying was performed at 70 ° C. for 10 minutes, and then main firing was performed. The firing temperature is 550 ° C. and the peak retention time is about 8 minutes.
The film thickness after printing and baking was ~ 0.3 µm.

Step-b Next, an electrode wiring layer (signal side) 7a was formed by a thick film screen printing method. The paste material used was Ag-containing thick film paste NP-4035CA manufactured by Noritake Company. The firing temperature is 400 ° C and the peak retention time is about 13
Minutes. The film thickness after printing and firing was ７7 μm.

Step-c Next, an interlayer insulating layer 12a was formed by a thick film screen printing method. The paste material is a mixture of PbO as a main component and a glass binder. Firing temperature is 480
At C, the peak retention time is about 13 minutes. The film thickness after printing and firing was ３６36 μm. Normally, the insulating layer is printed and fired three times to ensure insulation between the upper and lower layers. Since the film formed by the thick film paste is usually a porous film, the porous state of the film is buried by repeating printing and baking a plurality of times to ensure insulation.

Step-d Next, an electrode wiring layer (scanning side) 7b was formed by a thick film screen printing method. The paste material used was Ag-containing thick film paste NP-4035CA manufactured by Noritake Company. The firing temperature is 400 ° C and the peak retention time is about 13
Minutes. The film thickness after printing and baking was １1 μm.

The matrix wiring is completed by the above steps.

Step-e Next, an insulating layer 12b was formed on the electrode wires 7a and 7b. In this embodiment, the photosensitive polyimide coating agent:
Apply Photo Nice (Toray) with a spinner,
After prebaking at 80 ° C for 120 minutes, exposure, development and rinsing are performed, and finally 140 ° C, 300 ° C, and 400 ° C for
Cure for 0 minutes to remove unnecessary portions other than the wiring. The film thickness of the thus formed insulating layer 12b after curing was 10 μm.

Step-f The mask of the conductive film 31 of the electron-emitting device involved in this step is a mask having an opening over the device electrodes 6a and 6b. Using this mask, a 100 nm-thick Cr film is formed by vacuum evaporation. After deposition and patterning, organic Pd (ccp4230 / Okuno Pharmaceutical Co., Ltd.) was spin-coated with a spinner and heated and baked at 300 ° C. for 10 minutes. The conductive film formed of fine particles of Pd as the main element thus formed had a thickness of 10 nm and a sheet resistance of 5 × 10 ⁴ Ω / □. This conductive film and C
The r film was etched with an acid etchant to form a conductive film 31 having a desired pattern.

Step-g Next, an antistatic film 13 was formed. In this embodiment, the outer frame 3
Using a mask formed inside, HITAZO
L GA66M 1.0% sol. Was applied by aero coat. The antistatic film 13 thus formed was an island-shaped fine particle film, and had a sheet resistance of 8 × 10 ⁸ Ω / □.

The rear plate 1 is completed by the above steps.

Step-h The outer frame 3 is placed on the rear plate 1 formed as described above. At this time, frit glass is applied to the joint between the rear plate 1 and the outer frame 3 in advance. The face plate 2 (formed by forming the fluorescent film 10 and the metal back 41 on the inner surface of the glass substrate 8) is arranged via the outer frame 3, and the joint between the face plate 2 and the outer frame 3 is provided in advance. Each frit glass is applied. The rear plate 1, the support frame 3, and the face plate 2 are bonded together and held at 100 ° C. for 10 minutes in the air, then heated to 300 ° C., held at 300 ° C. for 1 hour, and further heated to 400 ° C. The temperature was raised and baked for 10 minutes to seal.

The fluorescent film 10 is made of only a phosphor in the case of monochrome, but in the present embodiment, the phosphor has a stripe shape, and a black stripe is formed first.
Each of the gaps was coated with a phosphor of each color. As a material of the black stripe, a material mainly containing graphite, which is generally used, is used. A slurry method was used as a method of applying the phosphor on the glass substrate 8.

The metal back 41 on the inner surface side of the fluorescent film 10 is subjected to a smoothing process (usually called filming) of the inner surface of the fluorescent film after the fluorescent film is formed.
1 is formed by vacuum evaporation.

The face plate 2 is further provided with a fluorescent film 10.
In some cases, a transparent electrode is provided on the outer surface side of the fluorescent film 10 in order to increase the conductivity of the phosphor film 10. However, in the present embodiment, a sufficient conductivity was obtained only by using the metal back, so that the description was omitted.

When the above-mentioned sealing is performed, in the case of color, since the phosphors of each color must correspond to the electron-emitting devices, sufficient alignment is performed.

The atmosphere in the glass container (panel) completed as described above is evacuated by a vacuum pump through an exhaust pipe (not shown), and after reaching a sufficient degree of vacuum, a terminal D outside the container is provided.
A voltage was applied between the electrodes 6a and 6b of the electron-emitting device 5 through xo1 to Doxm and Doy1 to Doyn, and the conductive film 31 was formed by forming, thereby forming the electron-emitting portion 32. Furthermore, toluene was introduced into the panel from the panel exhaust pipe through a slow leak valve,
All electron-emitting devices 5 under an atmosphere of 1.3 × 10 ⁻³ Pa
Was driven to perform an activation process.

Next, the inside of the panel was evacuated to a degree of vacuum of about 1.3 × 10 ⁻⁴ Pa, and an exhaust pipe (not shown) was welded by heating with a gas burner to seal the panel.

Finally, in order to maintain the degree of vacuum after sealing,
Getter treatment was performed by a high-frequency heating method. In the image display device of the present embodiment completed as described above, the external terminals Dox1 to Doxm and Doy1 are connected to the respective electron-emitting devices.
Through Doyn, a scanning signal and a modulation signal are applied from a signal generation means (not shown) to emit electrons, and a high voltage Va is applied to the metal back 41 through the high voltage terminal Hv to accelerate the electron beam, thereby accelerating the electron beam. An image can be displayed by causing the light to collide with and excite and emit light.

In the image forming apparatus of this embodiment, although the high voltage Va was increased to 8.0 kV, no discharge or the like was observed, and an image with high luminance and good color expression was stably obtained.

[Example 2] In this example, the same steps as in Example 1 were performed except for step-e and step-g. Step-e and step-g in this example are as follows.

Step-e An insulating layer 12b was formed on the electrode wires 7a and 7b. In the present embodiment, a wholly aromatic polyimide varnish: Trenis #
3000 (manufactured by Toray Industries, Inc.) is applied using a spinner,
The curing was performed for 10 minutes at 200 ° C. and 20 minutes at 300 ° C. Next, a photoresist (AZ1500, manufactured by Hoechst) was formed for the patterns of the electrode wirings 7a and 7b, and the resist was removed after performing dry etching with O ₂ gas. At this time, since the O ₂ dry etching is not selective with respect to the trainee, it is necessary to form a photoresist thicker than the trainee. The thickness of the insulating layer 12b thus formed was 3 μm.

Step-g Next, an antistatic film 13 was formed. In this embodiment, the outer frame 3
Using a mask such as that formed inside, paste transformer T
YPE ・ (Mitsui Metal Mining) 1.0% sol. Was applied by aero coat. The antistatic film thus formed was an island-shaped fine particle film, and had a sheet resistance of 4 × 10 ⁸ Ω /
It was □.

The atmosphere in the glass container (panel) completed as described above is evacuated by a vacuum pump through an exhaust pipe, and after a sufficient degree of vacuum is reached, the forming process and the activation are performed in the same manner as in Example 1. Treatment. Next, after evacuation and sealing, a getter treatment was performed by a high-frequency heating method. In the image display device of the present embodiment completed as described above, similarly to the first embodiment, the electron beam collides with the fluorescent film, and the
An image can be displayed by emitting light.

In the image forming apparatus of this embodiment, although the high voltage Va was increased to 7.0 kV, no discharge or the like was observed, and an image with high luminance and good color expression was stably obtained.

Comparative Example This comparative example is the same as Example 1 except that Step-e and Step-g were omitted from Example 1.

The atmosphere in the completed glass container (panel) is evacuated by a vacuum pump through an exhaust pipe to reach a sufficient degree of vacuum.
An activation process was performed. Next, after performing evacuation and sealing, getter processing was performed by a high-frequency heating method.

In the image display device completed as described above, similarly to the first embodiment, the electron beam is made to collide with the fluorescent film,
An image was displayed by excitation and light emission.

In the image forming apparatus of this comparative example, when the high voltage Va was increased to 5.2 kV, element deterioration due to discharge was observed, and the image was evaluated by lowering Va to 4.0 kV. However, the color expression was not enough. Further, the image was disturbed within a few minutes, and stable display could not be performed.

[0065]

As described above, according to the image forming apparatus of the present invention, it is possible to provide an image forming apparatus capable of holding a good image for a long time, and to provide a high quality image forming apparatus such as a color flat television. Can be realized.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram illustrating an example of an image forming apparatus of the present invention.

FIG. 2 is a cross-sectional view illustrating an example of the image forming apparatus of the present invention.

FIG. 3 is a schematic view of a surface conduction electron-emitting device that can be used in the image forming apparatus of the present invention.

FIG. 4 is a partial cutaway configuration diagram of the image forming apparatus according to the embodiment of the present invention.

FIG. 5 is a manufacturing method diagram of the image forming apparatus according to the embodiment of the present invention.

FIG. 6 is a manufacturing method diagram of the image forming apparatus according to the embodiment of the present invention.

FIG. 7 is a schematic configuration diagram of a conventional flat electron beam display panel.

FIG. 8 is a sectional view of a conventional flat electron beam display panel.

DESCRIPTION OF SYMBOLS 1 Rear plate (electron source substrate) 2 Face plate (anode substrate) 3 Outer frame 4 Substrate serving as base of rear plate 5 Electron emitting elements 6a, 6b Electrodes (element electrodes) 7a, 7b Electrode wiring 8 Face Plate (anode substrate) 9 Transparent electrode 10 Fluorescent film 12a Interlayer insulating layer 12b Insulating layer on wiring 13 Antistatic film 31 Conductive film 32 Electron emission part 41 Metal back

Claims (7)

[Claims] 1. A vacuum vessel includes at least an electron source substrate having a plurality of electron-emitting devices and an anode substrate having an image forming member that emits light by irradiation of electrons emitted from the electron-emitting devices to form an image. A flat image forming apparatus, wherein an insulating layer is formed on a plurality of wirings connected to both ends of the electron-emitting device, and the surface of the electron source substrate including the insulating layer is an antistatic layer. An image forming apparatus, characterized in that the image forming apparatus is coated with: 2. The image forming apparatus according to claim 1, wherein said electron-emitting device is a cold cathode electron-emitting device. 3. The image forming apparatus according to claim 2, wherein said cold cathode electron-emitting device is a surface conduction electron-emitting device. 4. The image forming apparatus according to claim 1, wherein the insulating layer formed on the wiring is a polyimide resin. 5. The method according to claim 1, wherein the insulating layer formed on the wiring is a polybenzimidazole resin.
The image forming apparatus according to any one of claims 1 to 3. 6. The image forming apparatus according to claim 1, wherein the insulating layer formed on the wiring is formed from a photosensitive material. 7. The image forming apparatus according to claim 1, wherein the antistatic layer covering the electron source substrate is made of conductive fine particles.