JP2000084340A - Gas treating equipment - Google Patents

Gas treating equipment

Info

Publication number
JP2000084340A
JP2000084340A JP10260399A JP26039998A JP2000084340A JP 2000084340 A JP2000084340 A JP 2000084340A JP 10260399 A JP10260399 A JP 10260399A JP 26039998 A JP26039998 A JP 26039998A JP 2000084340 A JP2000084340 A JP 2000084340A
Authority
JP
Japan
Prior art keywords
gas
treated
adsorbent
concentration
contaminant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10260399A
Other languages
Japanese (ja)
Inventor
Yosuke Maeda
洋輔 前田
Shigeo Saiki
茂夫 斉木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Takuma Co Ltd
Original Assignee
Takuma Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Takuma Co Ltd filed Critical Takuma Co Ltd
Priority to JP10260399A priority Critical patent/JP2000084340A/en
Publication of JP2000084340A publication Critical patent/JP2000084340A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To make a purifying device small-sized for a gas treating equipment for removing pollutant in gas by the purifying device. SOLUTION: An adsorbent X or absorbent for absorbing or absorbing a pollutant to decrease the pollutant concn. of a gas G to be treated and sent to a purifying device 2 against an increase in the pollutant concn. of the gas G and discharging the adsorbed or absorbed pollutant to increase the pollutant concn. of the gas G to be sent to the purifying device 2 against a decrease in the pollutant concn. of the gas G is provided in a gas line 3 for introducing the gas G to the purifying device 2. Further, the adsorbent X or absorbent to decrease the pollutant concn. of the gas G to be sent to the purifying device 2 is provided, and gas introducing means 7A and 7B for sending a clean gas A to the purifying device 2 through a part 5 packed with the adsorbent X or absorbent when the delivery of the gas G from its source 1 is stopped are furnished.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、汚染成分(臭気成
分や種々の有害成分)の発生元(以下、単に発生元と称
する)から送られる被処理ガスの含有汚染成分を浄化装
置により除去して、被処理ガスの脱臭や無害化を図るガ
ス処理設備に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a purifier for removing contaminants contained in a gas to be treated sent from a source (hereinafter, simply referred to as a source) of contaminants (odor components and various harmful components). And a gas treatment facility for deodorizing and detoxifying a gas to be treated.

【0002】[0002]

【従来の技術】従来、この種のガス処理設備では、発生
元から送られる被処理ガスの汚染成分濃度が変動する
と、その濃度変動はそのまま浄化装置に及んで浄化装置
における処理負荷の変動になっていた。
2. Description of the Related Art Conventionally, in this type of gas treatment equipment, when the concentration of a pollutant component in the gas to be treated sent from the source fluctuates, the change in the concentration is directly applied to the purification device, resulting in a variation in the processing load in the purification device. I was

【0003】[0003]

【発明が解決しようとする課題】しかし、このような従
来設備では、目的の脱臭や無害化を確実にするのに、発
生元から送られる被処理ガスの汚染成分濃度の変動に対
し、その最高濃度に十分対応できる大きな能力の浄化装
置を装備しておくことが必要であり、発生元から送られ
る被処理ガスの汚染成分濃度が低い通常時には、この浄
化装置が能力過剰の装置となる無駄があった。
However, in such conventional equipment, in order to ensure the desired deodorization and detoxification, the maximum concentration of the contaminant components in the gas to be treated sent from the source is reduced. It is necessary to equip a purification device with a large capacity that can sufficiently cope with the concentration, and when the concentration of the contaminant component of the gas to be treated sent from the source is low, there is no waste when this purification device becomes a device with excessive capacity. there were.

【0004】また同様に、従来設備では、発生元からの
被処理ガスの送り出しが断続的に行われる場合、発生元
から送り出される被処理ガスの汚染成分濃度(変動があ
る場合にはその最高濃度)に対応できるように能力選定
して装備した浄化装置が、ガス送出の停止時に全くの遊
休装置となってしまう無駄もあった。
Similarly, in the conventional equipment, when the gas to be treated is intermittently delivered from the source, the concentration of the contaminant component of the gas to be treated sent from the source (if there is a fluctuation, the maximum There is also a waste that the purifying device equipped with the capability selected so as to be able to cope with the above becomes an entirely idle device when the gas delivery is stopped.

【0005】この実情に鑑み、本発明の主たる課題は、
合理的な構成付加により上記の如き問題を効果的に解消
する点にある。
[0005] In view of this situation, the main problems of the present invention are:
The point is that the above-mentioned problem is effectively solved by adding a rational configuration.

【0006】[0006]

【課題を解決するための手段】〔1〕請求項1に係る発
明では、ガス中の汚染成分を除去する浄化装置へ被処理
ガスを導くガス路に、発生元から送られる被処理ガスの
汚染成分濃度の上昇に対し、そのガス中の汚染成分を吸
着又は吸収して前記浄化装置へ送る被処理ガスの汚染成
分濃度を低下させ、かつ、発生元から送られる被処理ガ
スの汚染成分濃度の低下に対し、吸着又は吸収した汚染
成分を放出して前記浄化装置へ送る被処理ガスの汚染成
分濃度を上昇させる吸着剤又は吸収剤を設ける。
Means for Solving the Problems [1] In the invention according to the first aspect, the contamination of the gas to be treated sent from the generation source to a gas path for guiding the gas to be treated to a purification device for removing polluting components in the gas. In response to the increase in the component concentration, the concentration of the contaminant component of the gas to be treated sent from the source is reduced by adsorbing or absorbing the contaminant component in the gas and sending it to the purification device. An adsorbent or absorbent is provided to release the adsorbed or absorbed contaminants and increase the concentration of the contaminants in the gas to be treated sent to the purification device.

【0007】つまり、この構成によれば、汚染成分に対
する吸着剤の吸着量又は吸収剤の吸収量とガス中の汚染
成分濃度との間に存在する正の相関関係、すなわち、ガ
ス中の汚染成分濃度が高くなるほど、その汚染成分に対
する吸着剤の吸着量又は吸収剤の吸収量が増し、また逆
に、ガス中の汚染成分濃度が低くなるほど、その汚染成
分に対する吸着剤の吸着量又は吸収剤の吸収量が減少す
る関係を利用した状態で、発生元から送られる被処理ガ
スの汚染成分濃度の変動に対し、浄化装置に導入する被
処理ガスの汚染成分濃度の変動を抑制して、その導入濃
度を均平化することができる。
That is, according to this configuration, a positive correlation exists between the adsorbed amount of the adsorbent or the absorbed amount of the adsorbent and the concentration of the contaminant in the gas, that is, the contaminant in the gas. The higher the concentration, the higher the amount of adsorbent adsorbed or absorbed by the contaminant, and conversely, the lower the concentration of contaminant in the gas, the lower the amount of adsorbent adsorbed on the contaminant or the amount of adsorbent. Using the relationship where the amount of absorption decreases, the fluctuations in the concentration of pollutants in the gas to be treated introduced into the purification device are suppressed, and the introduction of the fluctuations in the concentration of pollutants in the gas to be treated sent from the source is controlled. The concentration can be leveled.

【0008】すなわち、このことにより、従来、発生元
から送られる被処理ガスの汚染成分濃度が変動する場
合、その変動における最高濃度に対応できる能力の浄化
装置を要していたのに比べ、浄化装置に要求される最大
能力を低減して浄化装置を小型なもので済ませることが
でき、設備コストを安価にすることができる。
That is, when the concentration of the contaminant component of the gas to be treated sent from the source fluctuates, a purifying apparatus capable of coping with the maximum concentration in the fluctuation is required. It is possible to reduce the maximum capacity required of the device, to reduce the size of the purification device, and to reduce the equipment cost.

【0009】〔2〕請求項2に係る発明では、ガス中の
汚染成分を除去する浄化装置へ被処理ガスを導くガス路
に、被処理ガス中の汚染成分を吸着又は吸収して前記浄
化装置へ送る被処理ガスの汚染成分濃度を低下させる吸
着剤又は吸収剤を設けるとともに、発生元からの被処理
ガスの送り出しの停止時に、前記吸着剤又は前記吸収剤
の配設部を通じて清浄ガスを前記浄化装置に送る清浄ガ
ス導入手段を設ける。
[2] According to the second aspect of the present invention, the purifying device is configured to adsorb or absorb the contaminant in the gas to be treated into a gas passage for guiding the gas to be treated to the purifying device for removing the contaminant in the gas. Provide an adsorbent or absorbent to reduce the concentration of contaminant components of the gas to be processed to be sent to, and when the sending of the gas to be processed from the generation source is stopped, the clean gas is passed through the adsorbent or the disposing part of the absorbent. A means for introducing clean gas to be sent to the purification device is provided.

【0010】つまり、この構成によれば、請求項1に係
る発明と同様、汚染成分に対する吸着剤の吸着量又は吸
収剤の吸収量とガス中の汚染成分濃度との間に存在する
正の相関関係を利用した状態で、発生元からの被処理ガ
スの送り出しが断続的であることに対し、発生元からの
被処理ガスの送り出し時には、吸着剤又は吸収剤による
吸着や吸収により浄化装置へ送る被処理ガスの汚染成分
濃度を低下させ、一方発生元からの被処理ガスの送り出
し停止時には、上記清浄ガス導入手段により吸着剤又は
吸収剤の配設部を通じて浄化装置に送る清浄ガスへ吸着
剤又は吸収剤から先に吸着又は吸収した汚染成分を効率
的に放出させて、浄化装置に対する汚染成分含有ガスの
導入を継続できる。
That is, according to this configuration, similarly to the first aspect of the invention, the positive correlation existing between the amount of adsorbent adsorbed on the contaminant or the amount of adsorbent absorbed and the concentration of the contaminant in the gas. In the state where the relationship is used, the supply of the gas to be treated from the source is intermittent, whereas the supply of the gas to be treated from the source is sent to the purification device by adsorption or absorption by the adsorbent or absorbent. When the concentration of the contaminants in the gas to be treated is reduced, and when the delivery of the gas to be treated from the source is stopped, the adsorbent or the adsorbent or the clean gas sent to the purification device through the adsorbent or the absorbent is disposed by the clean gas introducing means. The contaminant component previously adsorbed or absorbed from the absorbent can be efficiently released, and the introduction of the contaminant-containing gas into the purification device can be continued.

【0011】すなわち、このことにより、従来、発生元
からの被処理ガスの送り出しが断続的である場合、発生
元から送り出される被処理ガスの汚染成分濃度(変動が
ある場合にはその最高濃度)に対応できる能力の浄化装
置を要していたのに比べ、請求項1記載の発明と同様、
浄化装置に要求される最大能力を低減して浄化装置を小
型なもので済ませることができ、設備コストを安価にす
ることができる。
In other words, this means that, conventionally, when the gas to be treated is intermittently sent from the source, the concentration of the contaminant component of the gas to be treated sent from the source (if there is a fluctuation, the highest concentration). As compared with the necessity of a purifying device capable of coping with
The purifier can be reduced in size by reducing the maximum capacity required of the purifier, and the equipment cost can be reduced.

【0012】〔3〕請求項3に係る発明では、前記清浄
ガス導入手段を、吸着剤又は吸収剤の配設部に対し、浄
化装置に送る清浄ガスを被処理ガスとは逆向きに通過さ
せる構成にする。
[3] In the invention according to claim 3, the clean gas introducing means allows the clean gas to be sent to the purifying device to pass through the portion where the adsorbent or the absorbent is disposed, in a direction opposite to the gas to be treated. Configure.

【0013】つまり、この構成によれば、吸着剤又は吸
収剤の配設部に対する被処理ガスの通過において、その
配設部における上流側部分ほど汚染成分の吸着状態や吸
収状態が濃密になるのに対し、この吸着剤又は吸収剤か
ら汚染成分を放出させる清浄ガスの通気時には、被処理
ガスとは逆向きの清浄ガス通過により、放出汚染成分を
吸着剤又は吸収剤の配設部における内奥部へ極力通過さ
せないようにして再吸着や再吸収による放出効率の低下
を防止した状態で、汚染成分を吸着剤又は吸収剤の配設
部から一層効率的に放出させることができる。
In other words, according to this configuration, in the passage of the gas to be treated through the adsorbent or absorbent arrangement portion, the more the upstream side of the arrangement portion, the denser the adsorption state or absorption state of the contaminant component becomes. On the other hand, when the clean gas for releasing the contaminant component from the adsorbent or the absorbent is ventilated, the discharged contaminant is passed through the clean gas in a direction opposite to the gas to be treated, so that the contaminated component is removed from the inner side of the adsorbent or the absorber. The contaminant can be more efficiently released from the portion where the adsorbent or the absorbent is disposed in a state in which a decrease in the release efficiency due to re-adsorption or re-absorption is prevented by preventing the adsorbent or the absorbent from being passed through as much as possible.

【0014】すなわち、このことにより、発生元からの
被処理ガスの送り出しの停止時にその被処理ガスに代え
て浄化装置に送るガス(放出汚染成分を含んだ上記清浄
ガス)の汚染成分濃度を効率的に上昇させることがで
き、また、次に吸着剤又は吸収剤に汚染成分を吸着又は
吸収させる際の吸着量や吸収量も高めることができ、こ
れらのことから、発生元からの被処理ガスの送り出し時
とその送り出しの停止時とにおける浄化装置導入ガスの
汚染成分濃度の差を小さくすることができて、浄化装置
に要求される最大能力の低減を一層効果的に達成でき
る。
That is, when the supply of the gas to be treated is stopped from the source, the concentration of the pollutant component in the gas (the above-mentioned clean gas containing the polluted pollutant) to be sent to the purifying device in place of the gas to be treated can be efficiently controlled. It is possible to increase the amount of adsorption and absorption when the contaminant is adsorbed or absorbed by the adsorbent or absorbent next. The difference between the concentration of the contaminant component of the gas introduced into the purifying apparatus at the time of feeding and the time when the feeding is stopped can be reduced, and the reduction of the maximum capacity required for the purifying apparatus can be achieved more effectively.

【0015】〔4〕請求項4に係る発明では、減圧によ
り前記吸着剤又は前記吸収剤からの汚染成分の放出を促
進する減圧手段を設ける。
[4] The invention according to claim 4 is provided with a decompression means for promoting the release of the contaminant from the adsorbent or the absorbent by decompression.

【0016】つまり、この構成によれば、発生元から送
られる被処理ガスの汚染成分濃度の低下に対し、先に吸
着又は吸収した汚染成分を吸着剤又は吸収剤から放出さ
せて浄化装置へ送る被処理ガスの汚染成分濃度を上昇さ
せるのに、又は、発生元からの被処理ガスの送り出しの
停止に対し、先に吸着又は吸収した汚染成分を吸着剤又
は吸収剤から前記清浄ガス導入手段による導入清浄ガス
に放出させて浄化装置に対する汚染成分含有ガスの導入
を継続させるのに、吸着剤又は吸収剤からの汚染成分の
放出を上記減圧手段による減圧をもって促進すること
で、これら被処理ガスの汚染成分濃度の低下時や発生元
からの被処理ガスの送り出しの停止時における浄化装置
導入ガスの汚染成分濃度を一層効率的に上昇させること
ができ、また、この放出促進により、次に非減圧下で吸
着剤又は吸収剤に汚染成分を吸着又は吸収させる際の吸
着量や吸収量も高めることができる。
That is, according to this configuration, in response to a decrease in the concentration of the contaminant component of the gas to be processed sent from the source, the contaminant component previously adsorbed or absorbed is released from the adsorbent or the absorbent and sent to the purification device. In order to increase the concentration of the contaminant component of the gas to be treated, or to stop sending out the gas to be treated from the source, the previously adsorbed or absorbed contaminant is removed from the adsorbent or the absorbent by the clean gas introducing means. In order to release the contaminated component-containing gas into the purification device by releasing it into the introduced clean gas, the release of the contaminated component from the adsorbent or the absorbent is promoted by reducing the pressure by the above-described decompression means. It is possible to more efficiently increase the concentration of the contaminant in the gas introduced into the purification device when the concentration of the contaminant decreases or when the supply of the gas to be treated is stopped from the source. By leaving promoting, then contaminant adsorbent or absorbent in the non-reduced pressure can be enhanced adsorption and absorption when adsorbed or absorbed.

【0017】すなわち、このことにより、発生元から送
られる被処理ガスの汚染成分濃度が変動することに対し
ては、浄化装置へ送る被処理ガスの汚染成分濃度を一層
効果的に均平化することができ、また、発生元からの被
処理ガスの送り出しが断続的であることに対しては、発
生元からの被処理ガスの送り出し時とその送り出しの停
止時とにおける浄化装置導入ガスの汚染成分濃度の差を
小さくすることができ、いずれの場合も、浄化装置に要
求される最大能力の低減を一層効果的に達成できる。
That is, with this, even if the concentration of the contaminant component of the gas to be treated sent from the source fluctuates, the concentration of the contaminant component of the gas to be treated sent to the purification device is more effectively leveled. In addition, the intermittent delivery of the gas to be treated from the generation source can be considered as the contamination of the gas introduced into the purification device when the gas to be treated is delivered from the source and when the delivery is stopped. The difference between the component concentrations can be reduced, and in any case, the reduction in the maximum capacity required of the purification device can be more effectively achieved.

【0018】なお、減圧による吸着剤又は吸収剤からの
汚染成分の放出促進は、汚染成分に対する吸着剤の吸着
量又は吸収剤の吸収量とガス圧との間に存在する正の相
関によるものである。
The promotion of the release of the contaminant from the adsorbent or the absorbent due to the reduced pressure is due to a positive correlation existing between the amount of the adsorbent adsorbed on the contaminant or the amount of the absorbent absorbed and the gas pressure. is there.

【0019】〔5〕請求項5に係る発明では、加熱によ
り前記吸着剤又は前記吸収剤からの汚染成分の放出を促
進する加熱手段を設ける。
[5] In the invention according to claim 5, a heating means is provided for promoting the release of contaminants from the adsorbent or the absorbent by heating.

【0020】つまり、この構成によれば、発生元から送
られる被処理ガスの汚染成分濃度の低下に対し、先に吸
着又は吸収した汚染成分を吸着剤又は吸収剤から放出さ
せて浄化装置へ送る被処理ガスの汚染成分濃度を上昇さ
せるのに、又は、発生元からの被処理ガスの送り出しの
停止に対し、先に吸着又は吸収した汚染成分を吸着剤又
は吸収剤から前記清浄ガス導入手段による導入清浄ガス
に放出させて浄化装置に対する汚染成分含有ガスの導入
を継続させるのに、吸着剤又は吸収剤からの汚染成分の
放出を上記加熱手段による加熱をもって促進すること
で、これら被処理ガスの汚染成分濃度の低下時や発生元
からの被処理ガスの送り出しの停止時における浄化装置
導入ガスの汚染成分濃度を一層効率的に上昇させること
ができ、また、この放出促進により、次に非加熱下で吸
着剤又は吸収剤に汚染成分を吸着又は吸収させる際の吸
着量や吸収量も高めることができる。
That is, according to this configuration, in response to a decrease in the concentration of the contaminant component of the gas to be processed sent from the source, the contaminant component previously adsorbed or absorbed is released from the adsorbent or absorbent and sent to the purification device. In order to increase the concentration of the contaminant component of the gas to be treated, or to stop sending out the gas to be treated from the source, the previously adsorbed or absorbed contaminant is removed from the adsorbent or the absorbent by the clean gas introducing means. In order to release the contaminated component-containing gas into the purification device by releasing it into the introduced clean gas, the release of the contaminated component from the adsorbent or the absorbent is promoted by heating by the above-mentioned heating means, so that the gas to be treated can be discharged. It is possible to more efficiently increase the concentration of the contaminant in the gas introduced into the purification device when the concentration of the contaminant decreases or when the supply of the gas to be treated is stopped from the source. By leaving promoting, then contaminant adsorbent or absorbent in the unheated under can be enhanced adsorption and absorption when adsorbed or absorbed.

【0021】すなわち、このことにより、請求項4に係
る発明と同様、発生元から送られる被処理ガスの汚染成
分濃度が変動することに対しては、浄化装置へ送る被処
理ガスの汚染成分濃度を一層効果的に均平化することが
でき、また、発生元からの被処理ガスの送り出しが断続
的であることに対しては、発生元からの被処理ガスの送
り出し時とその送り出しの停止時とにおける浄化装置導
入ガスの汚染成分濃度の差を小さくすることができて、
いずれの場合も、浄化装置に要求される最大能力の低減
を一層効果的に達成できる。
That is, in the same manner as in the fourth aspect of the present invention, when the concentration of the contaminant component of the gas to be treated sent from the source fluctuates, the concentration of the contaminant component of the gas to be treated sent to the purification device is reduced. Can be more effectively leveled, and the intermittent delivery of the gas to be treated from the generation source can be considered when the delivery of the gas to be processed from the source and the stop of the delivery. The difference between the concentration of the contaminants in the gas introduced into the purifier at the time can be reduced,
In any case, the reduction of the maximum capacity required of the purification device can be achieved more effectively.

【0022】なお、加熱による吸着剤又は吸収剤からの
汚染成分の放出促進は、汚染成分に対する吸着剤の吸着
量又は吸収剤の吸収量と温度との間に存在する負の相関
によるものである。
The promotion of the release of the contaminant from the adsorbent or the absorbent by heating is due to a negative correlation existing between the amount of the adsorbent adsorbed on the contaminant or the amount of the absorbent absorbed and the temperature. .

【0023】上記加熱手段の直接の加熱対象は、吸着剤
や吸収剤の配設部に通過させる汚染成分濃度が低下した
被処理ガス、ないし、前記清浄ガス導入手段による導入
清浄ガス、あるいは、吸着剤や吸収剤自体のいずれであ
ってもよい。
The heating target of the heating means may be a gas to be treated having a reduced concentration of contaminants to be passed through the adsorbent or the absorbent, the clean gas introduced by the clean gas introducing means, or the adsorbed clean gas. Any of the agent and the absorbent itself may be used.

【0024】〔6〕請求項6に係る発明では、前記浄化
装置への導入ガスの汚染成分濃度を検出する濃度センサ
を設け、この濃度センサの検出情報に基づいて、前記清
浄ガス導入手段による清浄ガスの導入量、又は、前記減
圧手段による減圧量、又は、前記加熱手段による加熱量
を調整する制御手段を設ける。
[6] In the invention according to claim 6, a concentration sensor for detecting the concentration of the contaminant component of the gas introduced into the purifying device is provided, and the cleaning by the clean gas introducing means is performed based on information detected by the concentration sensor. Control means is provided for adjusting the amount of gas introduced, the amount of pressure reduction by the pressure reducing means, or the amount of heating by the heating means.

【0025】つまり、この構成によれば、濃度センサの
検出情報に基づく上記制御手段による清浄ガス導入量の
調整又は減圧量の調整又は加熱量の調整により、吸着剤
や吸収剤からの汚染成分の放出状態を調整して、被処理
ガスの汚染成分濃度の低下時や発生元からの被処理ガス
の送り出しの停止時における浄化装置導入ガスの汚染成
分濃度を適切値に自動調整でき、これにより、運転管理
を容易にするとともに設備の運転安定性を効果的に向上
できる。
That is, according to this configuration, the control means adjusts the clean gas introduction amount, the pressure reduction amount, or the heating amount based on the information detected by the concentration sensor, thereby controlling the amount of the contaminant component from the adsorbent or the absorbent. By adjusting the release state, the concentration of the contaminant component of the gas introduced into the purifier can be automatically adjusted to an appropriate value when the concentration of the contaminant component of the gas to be treated decreases or when the delivery of the gas to be treated from the source is stopped. Operation management can be facilitated and the operation stability of the equipment can be effectively improved.

【0026】[0026]

【発明の実施の形態】図1は工場における生産・加工部
などの発生元1から排出される被処理ガスGを脱臭する
ガス処理設備を示し、2はガス中の汚染成分(本例では
臭気成分)を除去する浄化装置としての脱臭装置であ
り、この脱臭装置2では、燃焼や放電により臭気成分を
酸化処理する等の適当な脱臭方式をもって導入ガスを連
続的に処理する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows a gas treatment facility for deodorizing a gas G to be treated discharged from a source 1 such as a production / processing section in a factory. Reference numeral 2 denotes a pollutant component (in this example, odorous gas) in the gas. This is a deodorizing device as a purifying device for removing the component), and the deodorizing device 2 continuously processes the introduced gas by an appropriate deodorizing method such as oxidizing an odorous component by burning or discharging.

【0027】被処理ガスGを上記脱臭装置2に導くガス
路3には、発生元1から送り出される被処理ガスGの臭
気成分濃度の変動や、発生元1からの被処理ガス排出の
断続に対して脱臭装置2における処理負荷の変動を抑制
する安定化槽4を設けてあり、この安定化槽4の内部に
は、変動抑制用の緩衝手段として活性炭やゼオライト等
の適当な吸着剤Xを構成材とする通気性の吸着層5を設
けてある。
The gas path 3 for guiding the gas to be treated G to the deodorizing device 2 is used for changing the concentration of the odor component of the gas to be treated G sent out from the source 1 and for intermittent discharge of the gas to be treated from the source 1. On the other hand, a stabilizing tank 4 for suppressing the fluctuation of the processing load in the deodorizing device 2 is provided. Inside the stabilizing tank 4, a suitable adsorbent X such as activated carbon or zeolite is used as a buffer means for suppressing fluctuation. A breathable adsorption layer 5 is provided as a constituent material.

【0028】この安定化槽4には、発生元1からの被処
理ガスGを導入する主ガス導入口6A、及び、吸着層5
を通過させた被処理ガスGを脱臭装置2に送る主ガス導
出口6Bを、吸着層5を挟んで槽の一端側と他端側とに
振り分けて設けるのに加え、清浄ガスを吸着層5に対し
被処理ガスGとは逆向きに通過させた上で脱臭装置2に
送る清浄ガス導入手段として、外部の清浄空気A(清浄
ガスの一例)を槽内に導入する清浄ガス導入口7A、及
び、吸着層5を通過させた清浄空気Aを脱臭装置2に送
る清浄ガス導出口7Bを、主ガス導入口6A及び主ガス
導出口6Bとは導入側と導出側との位置関係を反対にし
た状態で吸着層5を挟んで槽の一端側と他端側とに振り
分けて設け、また、これら各口6A,6B,7A,7B
を開閉するダンパD1〜D4を装備してある。
The stabilizing tank 4 has a main gas inlet 6A for introducing the gas G to be treated from the generator 1 and an adsorbing layer 5
In addition to providing a main gas outlet 6B for sending the gas to be treated G that has passed through the deodorizing device 2 to one end and the other end of the tank with the adsorption layer 5 interposed therebetween, clean gas is supplied to the adsorption layer 5 On the other hand, as a clean gas introducing means that is passed in the opposite direction to the gas to be treated G and then sent to the deodorizing device 2, a clean gas inlet 7A for introducing external clean air A (an example of a clean gas) into the tank is provided. Further, the clean gas outlet 7B that sends the clean air A that has passed through the adsorption layer 5 to the deodorizing device 2 is changed so that the main gas inlet 6A and the main gas outlet 6B are opposite in the positional relationship between the inlet side and the outlet side. In a state in which the adsorption layer 5 is interposed between the two ends 6A, 6B, 7A, 7B
Are provided with dampers D1 to D4 for opening and closing.

【0029】この構成により、発生元1からの被処理ガ
スGの排出時には、主ガス導入口6A及び主ガス導出口
6Bに対するダンパD1,D4を開き、かつ、清浄ガス
導入口7A及び清浄ガス導出口7Bに対するダンパD
3,D2を閉じた状態にして、発生元1からの被処理ガ
スGを吸着層5に通過させた上で脱臭装置2に送るよう
にし、これにより、発生元1からの被処理ガスGの臭気
成分濃度の上昇に対しては、吸着剤Xによる吸着により
被処理ガスGの臭気成分濃度を低下させ、一方、発生元
1からの被処理ガスGの臭気成分濃度の低下に対して
は、先に吸着した臭気成分の吸着剤Xから放出(いわゆ
る脱着)により被処理ガスGの臭気成分濃度を上昇させ
るようにして、脱臭装置2に送る被処理ガスGの臭気成
分濃度を均平化する。
With this configuration, when the gas G to be treated is discharged from the source 1, the dampers D1 and D4 for the main gas inlet 6A and the main gas outlet 6B are opened, and the clean gas inlet 7A and the clean gas inlet 6A are opened. Damper D for exit 7B
3, D2 is closed, and the gas G to be treated from the source 1 is passed through the adsorption layer 5 and then sent to the deodorizer 2, whereby the gas G to be treated from the source 1 is removed. With respect to the increase in the concentration of the odor component, the concentration of the odor component of the gas G to be treated is reduced by adsorption with the adsorbent X. On the other hand, with the decrease in the concentration of the odor component of the gas G to be treated from the generation source 1, The concentration of the odor component of the gas G to be sent to the deodorizing device 2 is equalized by increasing the concentration of the odor component of the gas G to be treated by releasing the adsorbed odor component from the adsorbent X (so-called desorption). .

【0030】また、発生元1からの被処理ガス排出の停
止時には、反対に、主ガス導入口6A及び主ガス導出口
6Bに対するダンパD1,D4を閉じ、かつ、清浄ガス
導入口7A及び清浄ガス導出口7Bに対するダンパD
3,D2を開いた状態にして、発生元1からの被処理ガ
スGに代え、清浄空気Aを吸着層5に通過させた上で脱
臭装置2に送るようにし、これにより、先に吸着した臭
気成分を清浄空気Aに放出させて清浄空気Aとともに脱
臭装置2に導入する形態で、脱臭装置2での臭気成分含
有ガスの処理を継続する。
On the other hand, when the discharge of the gas to be treated from the source 1 is stopped, the dampers D1 and D4 for the main gas inlet 6A and the main gas outlet 6B are closed, and the clean gas inlet 7A and the clean gas Damper D for outlet 7B
3. With D2 opened, the clean air A was passed through the adsorption layer 5 and sent to the deodorizer 2 instead of the gas G to be treated from the generation source 1, whereby the gas was adsorbed first. The processing of the odorous component-containing gas in the deodorizing device 2 is continued in a form in which the odorous component is released into the clean air A and introduced into the deodorizing device 2 together with the clean air A.

【0031】すなわち、このガス処理設備では、発生元
1からの被処理ガスGの臭気成分濃度が高いときに吸着
剤Xによる吸着をもって脱臭装置2に送る被処理ガスG
の臭気成分濃度を低下させる一方、吸着させた臭気成分
については、発生元1からの被処理ガスGの臭気成分濃
度が低いときや、発生元1からの被処理ガス排出の停止
時を利用して脱臭装置2で処理するようにし、これによ
り、脱臭装置2における処理負荷の変動を抑制して脱臭
装置2を小型なもので済ませられるようにしてある。
That is, in this gas treatment equipment, when the concentration of the odor component of the gas G to be treated from the source 1 is high, the gas G to be treated is sent to the deodorizing device 2 by adsorption with the adsorbent X.
For the adsorbed odor component, the concentration of the odor component of the gas G to be treated from the source 1 is low or the discharge of the gas to be treated from the source 1 is stopped. In this way, the deodorizing device 2 is used for processing, whereby fluctuations in the processing load on the deodorizing device 2 are suppressed and the deodorizing device 2 can be reduced in size.

【0032】8は清浄ガス導入口7Aから導入した清浄
空気Aを吸着層5に通過させるに先立ち加熱して吸着剤
Xからの臭気成分放出を促進する加熱手段(例えば、電
熱ヒータや高温流体コイル)、9は脱臭装置導入ガスの
臭気成分濃度を検出する濃度センサ、10は発生元1か
らの被処理ガス排出の断続に連係して各ダンパD1〜D
4の開閉切り換え操作を自動的に行うとともに、清浄空
気Aの導入時には上記濃度センサ9の検出情報に基づき
加熱手段8の加熱量を自動調整することで、吸着剤Xか
らの臭気成分放出を調整して脱臭装置導入ガスの臭気成
分濃度を設定値に保つ制御手段である。
Reference numeral 8 denotes heating means (eg, an electric heater or a high-temperature fluid coil ), 9 are concentration sensors for detecting the concentration of the odor component of the gas introduced into the deodorizing device, and 10 is each of the dampers D1 to D in connection with the intermittent discharge of the gas to be treated from the generation source 1.
In addition to automatically performing the switching operation of the open / close operation of the heating unit 4 and automatically adjusting the heating amount of the heating means 8 based on the detection information of the concentration sensor 9 when introducing the clean air A, the release of the odor component from the adsorbent X is adjusted. Control means for keeping the concentration of the odor component of the gas introduced into the deodorizing device at a set value.

【0033】また、11は発生元1からの被処理ガスG
の排出時には、その被処理ガスGを安定化槽4を通じて
脱臭装置2に導入し、また、清浄空気Aの導入時には清
浄空気Aを安定化槽4から脱臭装置2に導入する吸引フ
ァンである。
Reference numeral 11 denotes the gas G to be treated from the source 1
Is a suction fan that introduces the gas to be treated G into the deodorizing device 2 through the stabilizing tank 4 when discharging the gas, and introduces the clean air A from the stabilizing tank 4 into the deodorizing device 2 when introducing the clean air A.

【0034】〔別実施形態〕次に別実施形態を列記す
る。発生元からの被処理ガスの汚染成分濃度の上昇や発
生元からの被処理ガスの送り出しに対し浄化装置への導
入ガスの汚染成分濃度を低下させ、かつ、発生元からの
被処理ガスの汚染成分濃度の低下や発生元からの被処理
ガスの送り出しの停止に対し浄化装置への導入ガスの汚
染成分濃度を上昇させるのに、前述の実施形態の如く吸
着剤を用いる場合、その吸着剤には活性炭、添着活性
炭、ゼオライト、活性アルミナなど、ガス中の汚染成分
濃度と吸着量との間に正の相関関係を有するものであれ
ば種々の材質のものを適用できる。
[Another Embodiment] Next, another embodiment will be described. In response to an increase in the concentration of the contaminant component of the gas to be treated from the source or the sending of the gas to be treated from the source, the concentration of the contaminant component in the gas introduced into the purification device is reduced, and the contamination of the gas to be treated from the source. When the adsorbent is used as in the above-described embodiment to increase the concentration of the contaminated components of the gas introduced into the purification device in response to the decrease in the component concentration or the stoppage of the delivery of the gas to be treated from the generation source, Various materials such as activated carbon, impregnated activated carbon, zeolite, and activated alumina can be used as long as they have a positive correlation between the concentration of contaminants in the gas and the amount of adsorption.

【0035】また、吸着剤の他、例えば脱臭目的におい
て純水や各種の水溶液を用いるなど、ガス中の汚染成分
濃度と吸収量との間に正の相関関係を有し、かつ汚染成
分の放出が容易な種々の吸収剤を用いてもよい。
In addition to the adsorbent, for example, pure water or various aqueous solutions are used for the purpose of deodorization, and there is a positive correlation between the concentration of the pollutant component in the gas and the amount absorbed, and the release of the pollutant component. May be used.

【0036】ガス処理の目的は脱臭に限られるものでは
なく、脱臭以外の無害化を目的とするものであってもよ
い。
The purpose of the gas treatment is not limited to deodorization, but may be a detoxification purpose other than deodorization.

【0037】前述の実施形態では、発生元から送り出さ
れる被処理ガスの汚染成分濃度の変動と、発生元からの
被処理ガスの送り出しの断続との両方に対応する例を示
したが、清浄ガス導入手段を省略して、発生元から送り
出される被処理ガスの汚染成分濃度の変動にのみ対応す
る形態を採ってもよく、また逆に、発生元からの被処理
ガス送出の断続にのみ対応する形態を採ってもよい。
In the above-described embodiment, an example is shown in which both the fluctuation of the concentration of the contaminant component of the gas to be processed sent from the source and the intermittent supply of the gas to be processed from the source are described. The introduction means may be omitted, and a form corresponding to only the fluctuation of the concentration of the contaminant component of the gas to be processed sent from the generation source may be adopted, and conversely, only the intermittent supply of the processing gas from the generation source may be supported. It may take a form.

【0038】清浄ガス導入手段により吸着剤又は吸収剤
の配設部を通じて浄化装置に送る清浄ガスは外部空気に
限られるものではなく、例えば水蒸気や窒素ガスなど、
その他、種々の気体を使用できる。
The clean gas sent to the purifier by the clean gas introduction means through the adsorbent or absorbent arrangement portion is not limited to external air, and may be, for example, water vapor or nitrogen gas.
In addition, various gases can be used.

【0039】前述の実施形態では、新鮮ガス導入手段に
より導入する清浄ガスを加熱することで吸着剤からの汚
染成分放出を促進したが、汚染成分濃度が低下した被処
理ガスを加熱することで吸着剤や吸収剤からの汚染成分
放出を促進したり、また、吸着剤や吸収剤そのものを加
熱することでそれら吸着剤や吸収剤からの汚染成分放出
を促進するようにしてもよい。
In the above-described embodiment, the release of the contaminant from the adsorbent is promoted by heating the clean gas introduced by the fresh gas introducing means. The release of the contaminant from the agent or the absorbent may be promoted, or the release of the contaminant from the adsorbent or the absorbent may be promoted by heating the adsorbent or the absorbent itself.

【0040】また、加熱による放出促進の他、例えば前
述の実施形態において、発生元からの被処理ガスGの汚
染成分濃度(臭気成分濃度)の低下時に、主ガス導入口
6Aに対するダンパD1の開度調整や吸引ファン11の
出力調整により安定化槽4の槽内を減圧して、吸着剤X
からの汚染成分(臭気成分)の放出を促進したり、ま
た、清浄ガスA(清浄空気)の導入時に清浄ガス導入口
7Aに対するダンパD3の開度調整や吸引ファン11の
出力調整により安定化槽4の槽内を減圧して、吸着剤X
からの汚染成分(臭気成分)の放出を促進するなど、適
当な減圧手段による減圧をもって吸着剤又は吸収剤から
の汚染成分放出を促進するようにしてもよい。
In addition to the emission promotion by heating, for example, in the above-described embodiment, when the concentration of the contaminant component (odor component) of the gas G to be treated from the source decreases, the damper D1 is opened with respect to the main gas inlet 6A. The pressure inside the stabilizing tank 4 is reduced by adjusting the temperature and adjusting the output of the suction fan 11, and the adsorbent X
Of the pollutant component (odor component) from the air, and the stabilization tank by adjusting the opening of the damper D3 with respect to the clean gas inlet 7A and the output of the suction fan 11 when the clean gas A (clean air) is introduced. The pressure in the tank of No. 4 is reduced, and the adsorbent X
The release of the contaminant component from the adsorbent or the absorbent may be promoted by reducing the pressure by an appropriate decompression means, such as by promoting the release of the contaminant component (odor component) from the water.

【0041】前述実施形態の如く、加熱手段の加熱量を
濃度センサの検出情報に基づき自動調整して吸着剤又は
吸収剤からの汚染成分放出を調整するに他、濃度センサ
の検出情報に基づき清浄ガス導入手段による清浄ガス導
入量や上記減圧手段による減圧量を自動調整して吸着剤
又は吸収剤からの汚染成分放出を調整するようにしても
よい。
As in the above-described embodiment, the amount of heating of the heating means is automatically adjusted based on the detection information of the concentration sensor to adjust the release of contaminant components from the adsorbent or the absorbent. The release of the contaminant component from the adsorbent or the absorbent may be adjusted by automatically adjusting the amount of the clean gas introduced by the gas introducing unit and the amount of the reduced pressure by the decompressing unit.

【0042】吸着剤や吸収剤は、前述実施形態の如く固
定層にしてガス路に配設する形態に限らず、循環移動層
の形態にしたり、循環散布する形態にしてもよい。
The adsorbent and the absorbent are not limited to the form in which the adsorbent and the absorbent are disposed in the gas path as fixed layers as in the above-described embodiment, but may be in the form of a circulating moving bed or in the form of circulating spray.

【0043】浄化装置は燃焼法や触媒燃焼法によるも
の、また、放電法や洗浄法あるいは生物処理法や吸着法
によるものなど、除去対象とする汚染成分に応じ、どの
ような方式のものであってもよい。
The purifier may be of any type, depending on the contaminant to be removed, such as a combustion method or a catalytic combustion method, or a discharge method, a cleaning method, a biological treatment method or an adsorption method. You may.

【図面の簡単な説明】[Brief description of the drawings]

【図1】実施形態を設備構成図FIG. 1 is a diagram showing a configuration of an embodiment.

【符号の説明】[Explanation of symbols]

1 発生元 2 浄化装置 3 ガス路 7A,7B 清浄ガス導入手段 8 加熱手段 9 濃度センサ 11 制御手段 G 被処理ガス X 吸着剤(又は吸収剤) DESCRIPTION OF SYMBOLS 1 Source 2 Purifier 3 Gas path 7A, 7B Clean gas introduction means 8 Heating means 9 Concentration sensor 11 Control means G Gas to be treated X Adsorbent (or absorbent)

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 4D002 AB02 AC10 BA03 BA04 BA05 BA07 CA07 DA35 DA41 DA45 DA46 EA02 EA08 EA09 EA13 FA10 GA02 GA03 GB02 GB03 GB04 GB06 HA01 4D012 CA09 CB12 CD02 CD03 CD04 CD05 CD07 CE01 CE02 CF02 CF03 CF05 CF08 CG01  ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4D002 AB02 AC10 BA03 BA04 BA05 BA07 CA07 DA35 DA41 DA45 DA46 EA02 EA08 EA09 EA13 FA10 GA02 GA03 GB02 GB03 GB04 GB06 HA01 4D012 CA09 CB12 CD02 CD03 CD04 CD05 CD07 CE01 CE02 CF02 CF03 CF05 CF08 CG01

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 ガス中の汚染成分を除去する浄化装置へ
被処理ガスを導くガス路に、 汚染成分の発生元から送られる被処理ガスの汚染成分濃
度の上昇に対し、そのガス中の汚染成分を吸着又は吸収
して、前記浄化装置へ送る被処理ガスの汚染成分濃度を
低下させ、 かつ、汚染成分の発生元から送られる被処理ガスの汚染
成分濃度の低下に対し、吸着又は吸収した汚染成分を放
出して、前記浄化装置へ送る被処理ガスの汚染成分濃度
を上昇させる吸着剤又は吸収剤を設けてあるガス処理設
備。
1. A gas passage for guiding a gas to be treated to a purification device for removing the polluting component in the gas. The components are adsorbed or absorbed to reduce the concentration of the contaminant components of the gas to be treated sent to the purification device, and the concentration of the contaminant components of the gas to be treated sent from the source of the contaminants is absorbed or absorbed. A gas treatment facility provided with an adsorbent or an absorbent that releases pollutants and increases the concentration of the pollutants in the gas to be treated sent to the purification device.
【請求項2】 ガス中の汚染成分を除去する浄化装置へ
被処理ガスを導くガス路に、 被処理ガス中の汚染成分を吸着又は吸収して前記浄化装
置へ送る被処理ガスの汚染成分濃度を低下させる吸着剤
又は吸収剤を設けるとともに、 汚染成分の発生元からの被処理ガスの送り出しの停止時
に、前記吸着剤又は前記吸収剤の配設部を通じて清浄ガ
スを前記浄化装置に送る清浄ガス導入手段を設けてある
ガス処理設備。
2. A contaminant concentration of a gas to be treated, which is adsorbed or absorbed in a gas path for guiding the gas to be treated to a purification device for removing the pollutants in the gas and sent to the purification device. An adsorbent or an absorbent that reduces the amount of contaminants, and when the sending of the gas to be treated is stopped from the source of the contaminant component, the clean gas that sends the clean gas to the purifying device through the adsorbent or the absorbent. Gas processing equipment provided with introduction means.
【請求項3】 前記清浄ガス導入手段を、前記吸着剤又
は前記吸収剤の配設部に対し、前記浄化装置に送る清浄
ガスを被処理ガスとは逆向きに通過させる構成にしてあ
る請求項2記載のガス処理設備。
3. The cleaning gas introducing means is configured to pass a cleaning gas to be sent to the purification device in a direction opposite to a gas to be processed, to a portion where the adsorbent or the absorbent is provided. 2. The gas processing equipment according to 2.
【請求項4】 減圧により前記吸着剤又は前記吸収剤か
らの汚染成分の放出を促進する減圧手段を設けてある請
求項1〜3のいずれか1項に記載のガス処理設備。
4. The gas processing facility according to claim 1, further comprising a pressure reducing means for promoting the release of the contaminant from the adsorbent or the absorbent by reducing the pressure.
【請求項5】 加熱により前記吸着剤又は前記吸収剤か
らの汚染成分の放出を促進する加熱手段を設けてある請
求項1〜4のいずれか1項に記載のガス処理設備。
5. The gas treatment facility according to claim 1, further comprising a heating means for heating to release a contaminant from the adsorbent or the absorbent.
【請求項6】 前記浄化装置への導入ガスの汚染成分濃
度を検出する濃度センサを設け、 この濃度センサの検出情報に基づいて、前記清浄ガス導
入手段による清浄ガスの導入量、又は、前記減圧手段に
よる減圧量、又は、前記加熱手段による加熱量を調整す
る制御手段を設けてある請求項2〜5のいずれか1項に
記載のガス処理設備。
6. A concentration sensor for detecting a concentration of a contaminant component of a gas introduced into the purifying device, wherein the amount of the clean gas introduced by the clean gas introducing means or the pressure reduction based on information detected by the concentration sensor. The gas processing equipment according to any one of claims 2 to 5, further comprising control means for adjusting a reduced pressure amount by means or a heating amount by the heating means.
JP10260399A 1998-09-14 1998-09-14 Gas treating equipment Pending JP2000084340A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10260399A JP2000084340A (en) 1998-09-14 1998-09-14 Gas treating equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10260399A JP2000084340A (en) 1998-09-14 1998-09-14 Gas treating equipment

Publications (1)

Publication Number Publication Date
JP2000084340A true JP2000084340A (en) 2000-03-28

Family

ID=17347382

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10260399A Pending JP2000084340A (en) 1998-09-14 1998-09-14 Gas treating equipment

Country Status (1)

Country Link
JP (1) JP2000084340A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007301480A (en) * 2006-05-11 2007-11-22 Hitachi Plant Technologies Ltd Treatment apparatus of voc gas and treatment method of voc gas using the apparatus
JP2012245488A (en) * 2011-05-30 2012-12-13 Mitsubishi Heavy Industries Environmental & Chemical Engineering Co Ltd Biological deodorization system
JP2013244431A (en) * 2012-05-24 2013-12-09 Chubu Electric Power Co Inc Deodorizing method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007301480A (en) * 2006-05-11 2007-11-22 Hitachi Plant Technologies Ltd Treatment apparatus of voc gas and treatment method of voc gas using the apparatus
JP2012245488A (en) * 2011-05-30 2012-12-13 Mitsubishi Heavy Industries Environmental & Chemical Engineering Co Ltd Biological deodorization system
JP2013244431A (en) * 2012-05-24 2013-12-09 Chubu Electric Power Co Inc Deodorizing method

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