JP2000076009A - Liquid crystal display enable magnetic flux detection digitizer and production thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To realize an integrated tablet in which a liquid crystal display(LCD) panel and a magnetic flux detection type digitizer are fabricated on a same substrate. SOLUTION: Since a semiconductor layer Hij of an LCD part and a semiconductor layer Lij of a magnetic flux detecting part, a gate line Gj of the LCD part and a detecting gate line Kj of the magnetic flux detecting part and a source line Si and drain line Dij of the LCD part and input lines Pi, output line Ji and drain line Eij of the magnetic flux detecting part are respectively formed on a same substrate 101 by a same process, only by adding a process for forming a magnetic resistor MRij and a process for opening a through hole for connecting the magnetic resistor MRij, the output line Ji and the drain line Eij on a protecting film 105 against a conventional process for preparing a liquid crystal cell, the integrated tablet can be easily realized.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a digitizer technology for detecting a magnetic flux to specify a position, and more particularly to a technology applicable to a liquid crystal display panel.

[0002]

2. Description of the Related Art With the recent diversification of information devices and the progress of handwriting recognition technology, pen input panels called tablets have been proposed. For example, a technology for detecting a magnetic flux to specify a position is introduced in Japanese Patent Application Laid-Open Nos. 7-152474 and 7-301666. These realize an easy-to-operate digitizer in that an input pen that does not require a cord for connecting a pen input panel, such as a permanent magnet, to a plurality of arrangements of magnetoresistive elements can be employed.

[0003]

On the other hand, in recent years, a type which is used also as a panel having a display function and a pen input panel has been developed.
A so-called “hybrid system” in which a display panel is simply overlapped is adopted. However, when the digitizer is simply pasted on a panel having a display function (for example, a liquid crystal display panel), there is a problem that the cost is increased.

Accordingly, the present invention provides a technology for realizing an integrated tablet in which a liquid crystal display panel and a magnetic flux detection type digitizer are formed on the same substrate.

[0005]

Means for Solving the Problems Claim 1 of the present invention
According to the present invention, a liquid crystal display transistor arranged in a matrix, a detection transistor provided corresponding to the liquid crystal display transistor, and a magnetic flux response type magnetic sensing element connected to the detection transistor A magnetic flux detection digitizer that can be displayed on a liquid crystal.

[0006] The invention according to claim 2 is as follows:
2. The digitizer according to claim 1, wherein the detection transistor and the liquid crystal display transistor are provided on the same substrate.

According to the third aspect of the present invention,
3. The magnetic flux detection digitizer capable of displaying liquid crystal according to claim 2, wherein a control electrode of the detection transistor is short-circuited to one of a pair of current electrodes.

According to a fourth aspect of the present invention,
3. The digitizer according to claim 2, further comprising a liquid crystal display electrode connected to the liquid crystal display transistor. The magnetic flux responsive magnetic sensing element is provided on the sensing transistor side with respect to the liquid crystal display electrode.

[0009] According to a fifth aspect of the present invention,
2. The magnetic flux detection digitizer capable of displaying a liquid crystal according to claim 1, wherein the detection transistor includes a first substrate on which the liquid crystal display transistor is provided and a second substrate that sandwiches a liquid crystal driven by the liquid crystal display transistor. A first wiring connected to the control electrode of the detection transistor, a second wiring connected to one of a pair of current electrodes of the detection transistor, and the first and second wirings. Any of a plurality of color filters for liquid crystal display having a mutual boundary above the wiring,
The substrate is further provided.

[0010] The invention according to claim 6 is as follows:
(A) simultaneously forming a liquid crystal display transistor and a detection transistor on a substrate; (b) a pair of wires connected to the liquid crystal display transistor and a pair of wires connected to the detection transistor (C) forming a first protective film covering the liquid crystal display transistor and the detection transistor; and (d) connecting to the liquid crystal display transistor. Forming an electrode on the first protective film, and (e)
Forming a magnetic flux-responsive magnetic sensing element connected to the sensing transistor.

[0011] The present invention according to claim 7 includes:
7. The method according to claim 6, wherein the step (e) precedes the step (c), and the first protective film includes the magnetic flux response type magnetic sensing element. cover.

[0012] The present invention according to claim 8 includes:
7. The method according to claim 6, wherein the step (e) is performed after the step (c), and the magnetic flux response type magnetic sensing element is formed from the first protective film. The step (c) includes a step (c-1) of annealing the first protective film.

According to a ninth aspect of the present invention, there is provided:
9. The method of manufacturing a magnetic flux detection digitizer capable of displaying a liquid crystal according to claim 8, wherein (f) is performed between the step (d) and the step (e) to cover the first protective film and the electrode. The method further includes a step of forming a second protective film. The step (c) further includes the step of (c-2) roughening the surface of the first protective film, wherein the magnetic flux responsive magnetic sensing element is formed on the second protective film. You.

According to a tenth aspect of the present invention, (a) a pair of wirings, a detecting transistor and a magnetic flux responsive magnetic detecting element connected between the pair of wirings are formed on a substrate. And (b) forming a liquid crystal display color filter that covers the detection transistor and the magnetic flux response type magnetic detection element and exposes the pair of wirings. Manufacturing method.

[0015]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Description of a liquid crystal panel to which the present invention is applied. FIG. 25 shows a structure of a liquid crystal display cell constituting a liquid crystal panel to which the present invention is applied, which is a structure conventionally employed. Here, a type called a reflection type in which display is visually recognized by light incident from a liquid crystal display surface is illustrated. However, it is also possible to apply the present invention to a type called a transmission type in which display is visually recognized by light incident from a surface opposite to the liquid crystal display surface. FIG. 2A is a plan view,
(B) shows a sectional view taken along a cutting line B0-B0. However, the positional relationship of each component in the direction perpendicular to the paper surface in FIG. 3A, that is, the positional relationship in the thickness direction of the digitizer can be grasped as the positional relationship in the vertical direction of the paper surface in FIG. In a), drawing is performed without using hidden lines to avoid complication of the drawing.

Generally, in a liquid crystal display panel, liquid crystal display cells are provided in a matrix at intersections between a plurality of gate lines and a plurality of source lines. In FIG. 25, the gate line G
structure is shown for a liquid crystal display cell provided corresponding to the intersection of the _j and the source line S _i. However, the portion where the liquid crystal is provided has a well-known structure, and is not drawn to avoid complication of the drawing. A liquid crystal is arranged above the sectional structure shown in FIG. 2B, and a substrate provided with a transparent electrode sandwiching the liquid crystal together with the sectional structure shown in FIG. Be placed.

The liquid crystal display panel includes a substrate 101 made of, for example, glass, and an insulating layer 102 laminated thereon. A semiconductor layer H _ij is provided on the insulating layer 102 corresponding to each liquid crystal display cell. The semiconductor layer H _ij has a higher impurity concentration at both ends than near the center, and a part of the source line S _i is connected to the drain line D _ij . A gate insulating film 103 is provided over the semiconductor layer H _ij and the insulating layer 102, and a part of the gate line G _{j faces the} semiconductor layer H _ij as a gate electrode via the gate insulating film 103. Hereinafter referred part of the semiconductor layer H _ij facing the gate line G _j and the gate electrode G _j. These source lines S _i and the drain line D _ij and the gate electrode G _j and the semiconductor layer H _ij constitute a transistor T _ij.

An interlayer insulating film 104 is provided on the gate electrode _Gj and the gate insulating film 103, and a protective film 105 is further provided thereon. However, the source line _Si and the drain line D _ij are provided between the interlayer insulating film 104 and the protective film 105. The source line _Si and the drain line D _ij penetrate the insulating layer 102 and the gate insulating film 103 via the contacts C1 and C2, respectively, and are connected to the semiconductor layer H _ij . A reflective electrode F _ij is provided on the protective film 105 and is connected to the drain line D _ij via a contact C3 penetrating the protective film 105.

[0019] Then the voltage applied to the gate line G _j conduction of transistor T _ij are controlled, signals applied to the source line S _i is transmitted to the reflective electrode F _ij, a liquid crystal (not shown) is driven.

Embodiment 1 FIG. 1 shows a structure of a magnetic flux detection digitizer capable of displaying a liquid crystal according to a first embodiment of the present invention. FIG. 3A is a plan view, and FIG.
The sectional view in -B1 is shown. However, the method of simplifying the description of the drawings is the same as that of FIG.

The digitizer according to the present invention is incorporated in the liquid crystal display cell shown in FIG. A transistor Q _ij having the same positional relationship in the thickness direction as the transistor T _ij is provided, a part of the reflective electrode F _ij is cut out, and a magnetoresistive element MR as a magnetic flux response type magnetic sensing element is provided.
_ij is provided.

[0022] In particular, the source line S _i parallel to the input line P _i
And the output line J _i and the drain line E _ij are
04 and the protective film 105. The gate insulating film 10 gate line G _j parallel detection gate lines K _j is
3 and an interlayer insulating film 104. Insulation layer 1
02 and the semiconductor layer L _ij is provided between the gate insulating film 103, a part of the detection gate lines K _j denotes a gate insulating film 10
3 and the semiconductor layer _Lij .

[0023] Similar to the semiconductor layer L _ij be the semiconductor layer H _ij, the impurity concentration has also increased from the vicinity of the center, a part of each input line P _i and the drain line E _ij is connected at both ends. The part and the drain line E _ij of input lines P _i, respectively via the contact C4, C5 insulating layer 10
It penetrates through the two gate insulating films 103 and is connected to the semiconductor layer _Lij . A magneto-resistance element MR _ij is provided on the protective film 105, and contacts C6 and C
7 are connected to the drain line E _ij and the output line J _i , respectively.

FIG. 2 is a circuit diagram showing an electrical equivalent circuit of the structure shown in FIG. FIG. 2 also shows a liquid crystal element _Lij not shown in FIG.

According to the present invention, a liquid crystal display portion, that is, a source line S _i , a gate line G _j , a transistor T _ij , a liquid crystal element L
Independently of _ij , a magnetic flux detection portion, that is, an input line P _i , an output line J _i , a detection gate line K _j , a transistor Q _ij , and a magnetoresistive element MR _ij are provided. Therefore independently of the operation of the liquid crystal display cell, a voltage is applied to the detection gate line K _j to control the conduction of transistor Q _ij, the input line P _i and the output line J _i
The position of the input pen that generates a magnetic flux by using, for example, a permanent magnet or an electromagnet can be detected.

FIGS. 3 to 11 are sectional views showing steps of forming the structure shown in FIG. 1 in the order of steps, and show cross sections corresponding to FIG. 1B.

First, on a substrate 101 made of glass,
iO ₂ is deposited by plasma CVD to form an insulating layer 10
2 (FIG. 3). Next, amorphous Si is deposited on the insulating layer 102 by a plasma CVD method and polycrystallized by an excimer laser. Then, the semiconductor layer H is patterned by photolithography and etching.
_ij and _Lij are formed simultaneously (FIG. 4).

As described above, a transistor employing low-temperature polycrystalline Si as a semiconductor layer has a resistance value of 10 kΩ during operation, which is almost the same order as the resistance value of the magnetoresistive element _MRij . Therefore, in order to detect the resistance of the magnetoresistive element MR _ij as compared with a transistor using amorphous Si having a resistance value of several MΩ during operation as a semiconductor layer, low-temperature polycrystalline Si is used as a semiconductor layer. Transistors are more suitable.

Thereafter, a gate insulating film 103 made of SiO ₂ is formed on the entire surface (FIG. 5), and after Cr is deposited by sputtering, this is patterned by photolithography and etching to form a gate line Gj and a gate line _Gj. The detection gate lines _Kj are simultaneously formed. The semiconductor layer H is formed by using the gate line G _j and the detection gate line K _j as a mask.
Phosphorus ions are implanted into both ends of _ij and _Lij by ion implantation to increase conductivity (FIG. 6).

Furthermore the SiO ₂ is deposited by plasma CVD to form an interlayer insulating film 104 on the entire surface, drilling the upper both ends of the semiconductor layer H _ij, L _ij it is patterned by photolithography and etching To obtain a through hole (FIG. 7). Then after depositing a Cr by sputtering, which was patterned by photolithography and etching, forming the source line S _i, the drain line D _ij, input line P _i, the output line J _i, the drain line E _ij simultaneously I do. At this time, the contacts C1, C2, and C in the through holes obtained in the process shown in FIG.
4, C5 are also formed (FIG. 8).

A photosensitive acrylic resin is applied to the structure shown in FIG. 8 by a coating machine to form a protective film 105. Thereafter, a through hole is formed above the drain line D _ij by photolithography (FIG. 9). Further, after depositing Al on the protective film 105 by sputtering, this is patterned by photolithography and etching to obtain a reflective electrode F _ij . At this time, a contact C3 is also formed in the through hole obtained in the step shown in FIG. 9 (FIG. 10). Thereafter, the protective film 10 is again formed.
5 is pierced in the output line J _i and the drain line E _ij to obtain a through hole (FIG. 11).

After depositing a Ni-20 at% Fe alloy by sputtering, this is patterned by photolithography and etching to form a magnetoresistive element _MRij . At this time, the contacts C6 and C7 are also formed in the through holes obtained in the step shown in FIG. 11 (FIG. 1B).

As described above, according to the present invention, the semiconductor layer H _{ij in the} liquid crystal display portion and the semiconductor layer L _{ij in the} magnetic flux detection portion are:
A detection gate line K _j of the gate line G _j and flux detecting portion of the liquid crystal display part, the source line S _i of the liquid crystal display portion, an input line P _i of the drain line D _ij and flux detecting portion, the output line J _i, Since the drain lines E _ij are formed in the same step, the magnetoresistive element MR
_ij and a step of perforating a through-hole for connecting the magnetoresistive element MR _ij with the output line J _i and the drain line E _ij in the protective film 105 to form an integrated tablet. It can be easily realized.

Embodiment 2 FIG. 12 shows a structure of a magnetic flux detection digitizer capable of displaying a liquid crystal according to the second embodiment of the present invention. FIG. 3A is a plan view, and FIG.
FIG. 2B is a sectional view taken along line 2-B2. However, the method of simplifying the description of the drawings is the same as that of FIG.

The digitizer according to the present embodiment has the structure shown in FIG.
Compared to the digitizer shown in FIG.
_The only difference is that _ij is provided between the protective film 105 and the interlayer insulating film 104, and the reflective electrode F _ij extends above the magnetoresistive element MR _ij . Even in such a structure, the equivalent circuit is the same as that shown in FIG. 2, but there is an effect that the liquid crystal display area can be increased by enlarging the reflective electrode F _ij .

FIGS. 13 and 14 are cross-sectional views showing a manufacturing process for obtaining the digitizer according to the present embodiment in the order of steps, and show a cross section corresponding to FIG. 1B.

First, after obtaining the structure shown in FIG. 8, FIG.
1B, a film formation process of a Ni-20 at% Fe alloy, which is performed when the structure is shifted to the structure shown in FIG. 1B, is performed (FIG. 13). Then, in the same manner as in the step shown in FIG. 9, a photosensitive acrylic resin is applied by a coating machine, and a through-hole is formed above the drain line D _ij by a photolithography technique to form a protective film 105 ( FIG.
4). Therefore, it is not necessary to provide the contacts C6 and C7, and the step shown in FIG. 11 is not necessary.

Therefore, this embodiment has advantageous effects in that the manufacturing process is simplified as compared with the first embodiment and that the liquid crystal display area can be increased.

Conversely, the structure of the first embodiment has some advantages over this embodiment. The protective film 105 needs to be annealed after coating, and the temperature is generally 200
° C or higher. In this embodiment, since forms a magnetoresistive element MR _ij before the formation of the protective film 105, to form a magnetoresistive element MR _ij after the formation of the Embodiment 1, the protective film 105 of embodiment, the magnetoresistive element MR _ij performance Embodiment 1 is more preferable from the viewpoint that a material that requires annealing can be used as the material of the protective film 105 without deteriorating the quality.

Embodiment 3 FIG. 15 shows a structure of a magnetic flux detection digitizer capable of displaying a liquid crystal according to the third embodiment of the present invention. FIG. 3A is a plan view, and FIG.
The sectional view in 3-B3 is shown. However, the method of simplifying the description of the drawings is the same as that of FIG.

The digitizer according to this embodiment has the structure shown in FIG.
As compared with the digitizer shown in FIG.
_j has a protruding portion that exists between the gate insulating film 103 and the interlayer insulating film 104 in proximity to the semiconductor layer L _ij, the source line S _i and were arranged in parallel input line P _i is detection gate is replaced by the connecting line P _ij for connecting the lines K _j and the semiconductor layer L _ij, the contact C8 connecting the connecting line P _ij and the projection of the detection gate lines K _j are different in that added. That is, the detection gate line _Kj is also connected to the source of the transistor _Qij via the contacts C4 and C8.

In the present embodiment, the detection gate line K _{j is used.}
Can be formed in the process shown in FIG.
Gate line K for detecting through-hole for obtaining contact C8
Perforating the interlayer insulating film 104 above the protrusion of _j can be performed in the step shown in FIG.
As described above, for example, since the materials of the interlayer insulating film 104 and the detection gate line _Kj are SiO ₂ and Cr, respectively, the former can be etched using the latter as a stopper. And it is not necessary to provide the wiring of the long dimension of the input line P _i.

FIG. 16 is a circuit diagram showing an electrical equivalent circuit of the digitizer according to the present embodiment. Embodiment 1
Similarly, also independently of the operation of the liquid crystal display cell in this embodiment, it is possible to control the conduction of transistor Q _ij by applying a voltage to the detection gate line K _j and. For example, if the transistor Q _ij is an NMOS transistor, the transistor Q _ij can be made conductive by grounding the output line J _i and applying a positive potential to the detection gate line K _j . Since a positive potential is applied to the source of the transistor Q _ij , a change in the resistance of the magnetoresistive element MR _ij is detected by detecting a current flowing between the input line P _i and the output line J _i. Can be.

Embodiment 4 FIG. FIG. 17 shows a structure of a magnetic flux detection digitizer capable of displaying a liquid crystal according to the fourth embodiment of the present invention. FIG. 3A is a plan view, and FIG.
FIG. 4 shows a cross-sectional view taken along 4-B4. However, the method of simplifying the description of the drawings is the same as that of FIG.

The digitizer according to the present embodiment has the structure shown in FIG.
Compared to the digitizer shown in FIG. 5, the magnetoresistive element M
R _ij is provided between the protective film 105 and the interlayer insulating film 104,
The only difference is that the reflective electrode F _ij extends above the magnetoresistive element MR _ij . Even in such a structure, the equivalent circuit is the same as that shown in FIG. 16, but there is an effect that the reflective electrode F _ij can be enlarged to increase the liquid crystal display area. Further, as compared with the third embodiment, the manufacturing process is simplified, which is advantageous in that the liquid crystal display area can be increased. From the viewpoint of not deteriorating the performance of the magnetoresistive element _MRij, the third embodiment is more preferable than the fourth embodiment, like the first embodiment is more preferable than the second embodiment.

Embodiment 5 FIG. 18 to 20 are cross-sectional views showing the steps for forming the digitizer according to the present embodiment in the order of steps, and show cross sections corresponding to FIG. 1B.

First, the structure shown in FIG.
Irregularities are formed on the surface of the substrate 05 by, for example, a photolithography technique (FIG. 18). Thereafter, the reflective electrode F _ij is formed in the same manner as in the step shown in FIG. _{Irregularities} occur on the surface of the reflective electrode F _ij reflecting the irregularities on the surface of the protective film 105 (FIG. 19). By roughening the surface of the reflective electrode _{Fij in} this way, incident light is irregularly reflected, and the visibility of liquid crystal display in a reflective liquid crystal display cell can be improved.

However, if a Ni-20 at% Fe alloy is deposited on the surface of the protective film 105 by sputtering as it is, the magnetoresistive element MR _ij due to the unevenness of the protective film 105.
Performance as bad.

Therefore, the protective film 1 is formed in the same manner as the protective film 105.
06 is formed on the protective film 105 by, for example, application. The protective film 106 can make unevenness of the surface of the protective film 105 flat. Then, as in the step shown in FIG.
Drill through holes for C6 and C7 (FIG. 20).

Since the outermost surface of the structure obtained in this manner is a flat protective film 106, Ni is deposited by sputtering.
In -20at% Fe alloy deposited is obtained by forming a magnetoresistive element MR _ij structurally (Figure 21), characteristics of the magnetoresistive element MR _ij is not degraded.

As described above, according to the present embodiment, the surface of the reflective electrode F _ij is roughened without deteriorating the characteristics of the magnetoresistive element MR _ij , thereby improving the visibility of the liquid crystal display. be able to.

Embodiment 6 FIG. In the first to fifth embodiments, the mode in which the liquid crystal display portion and the magnetic sensing portion of the liquid crystal display cell are provided on the same substrate 101 has been described. However, it is also possible to incorporate the magnetic sensing portion in a substrate provided with a counter electrode sandwiching the liquid crystal together with the reflective electrode F _ij of the liquid crystal display portion.

FIG. 22 shows a structure of a magnetic flux detecting digitizer capable of displaying a liquid crystal according to the sixth embodiment of the present invention. FIG. 3A is a plan view, and FIG. 3B is a cross-sectional view taken along a cutting line B5-B5. However, the method of simplifying the description of the drawings is the same as that of FIG.

The digitizer according to the present invention is provided on a substrate 201 facing a liquid crystal display cell shown in FIG. 25 with a liquid crystal not shown interposed therebetween. The positional relationship among the semiconductor layer L _ij , the transistor Q _ij , the input line P _i , the detection gate line K _j , the output line J _i , the magnetoresistive element MR _ij , and the contacts C4 and C5 is the same as in the second embodiment. However, the substrate 10
1, insulating layer 102, gate insulating film 103, interlayer insulating film 1
Instead of 04, the corresponding substrate 201, insulating layer 202, gate insulating film 203, and interlayer insulating film 204 are respectively formed of the same material.

Unlike the first embodiment, instead of the protective film 105, the color filters 205b and 205r are composed of a semiconductor layer L _ij , a transistor Q _ij , an input line P _i , a detection gate line K _j , an output line J _i , and a magnetic field. It is provided above the resistance element _MRij . For example, the color filters 205b and 205r are blue and red filters. Although not shown, a green filter is also provided as a color filter.

The color filter is formed by applying, developing and post-baking steps for each color. However, the input line P _i, does not form a color filter above the detection gate lines K _j, the input line P _i, exposing the detection gate lines K _j. In order for the input line P _i and the detection gate line K _j to also serve as the black matrix for the color filter, the boundary between the color filters is defined by the input line P _i ,
It exists above the detection gate line _Kj .

After that, an overcoat layer 206 made of a transparent resin is formed on the entire surface, and a transparent electrode 207 for applying a voltage to the liquid crystal together with the reflective electrode _Fij is formed of, for example, ITO.

In the configuration thus obtained, the magnetic flux can be detected independently of the liquid crystal display portion, and the same effect as in the first embodiment can be obtained. Further, there is no need to separately form a black matrix due to the presence of the input line _Pi and the detection gate line _Kj .

Other variations. 23 and 24 are mesh LCs each showing a set of liquid crystal display portions for each cell.
FIG. 7 is a conceptual diagram showing correspondence between a magnetic flux detection portion and a mesh MD indicating a set of cells for each cell.

The magnetic flux detecting portions shown in the first to fifth embodiments can be provided one-to-one with the cells of the liquid crystal display portion as shown in FIG. 23, or as shown in FIG. It is also possible to thin out the cells of the liquid crystal display part.

[0061]

According to the magnetic flux detecting digitizer capable of displaying a liquid crystal according to the first aspect of the present invention, the resistance of the magnetic flux responding type magnetic detecting element arranged corresponding to the transistor for liquid crystal display is measured. Since the position of the input pen such as a permanent magnet can be detected, an integrated tablet can be realized.

According to the liquid crystal display magnetic flux detection digitizer according to the second aspect of the present invention, the detection transistor and the liquid crystal display transistor can be formed in the same step on the same substrate, so that it is easy. Thus, it is possible to realize the magnetic flux detection digitizer capable of displaying a liquid crystal according to the first aspect.

According to a third aspect of the present invention, there is provided a magnetic flux detecting digitizer capable of displaying a liquid crystal according to the second aspect of the present invention, while reducing the number of wires to be laid on the substrate by one. The effect can be obtained.

According to the magnetic flux detection digitizer capable of displaying a liquid crystal according to the fourth aspect of the present invention, it is possible to increase the size of the electrode for the liquid crystal display and the area capable of displaying the liquid crystal.

According to a fifth aspect of the present invention, a liquid crystal displayable magnetic flux detecting digitizer according to the fifth aspect of the present invention provides the first effect of the liquid crystal displayable magnetic flux detecting digitizer according to the first aspect.
The second wiring also serves as a black matrix.

According to the method for manufacturing a magnetic flux detecting digitizer capable of displaying a liquid crystal according to the sixth aspect of the present invention, the liquid crystal display transistor and the detecting transistor and the wiring connected thereto are simultaneously formed. So
An integrated tablet can be realized in a small number of steps.

According to the method of manufacturing a magnetic flux detecting digitizer capable of displaying a liquid crystal according to claim 7 of the present invention, the magnetic flux detecting digitizer capable of displaying a liquid crystal according to claim 4 can be manufactured.

According to the method of manufacturing a magnetic flux detecting digitizer capable of displaying a liquid crystal according to the present invention, the first protective film is annealed while avoiding annealing of the magnetic flux responsive type magnetic sensing element. The material of the first protective film that needs to be annealed can be adopted without deteriorating the characteristics of the magnetic sensing element.

According to the method of manufacturing a magnetic flux detecting digitizer capable of displaying a liquid crystal according to the ninth aspect of the present invention, the surface of the first protective film is roughened, so that the electrodes formed thereon are also roughened. Be surfaced. Since this electrode diffusely reflects incident light, the visibility of the liquid crystal display is improved. On the other hand, since the magnetic flux response type magnetic sensing element is formed with the second protective film interposed between the first protective film and the first protective film, even if the surface of the first protective film is roughened, It does not degrade the characteristics of the responsive magnetic sensing element.

According to the method of manufacturing a magnetic flux detection digitizer capable of displaying a liquid crystal according to the tenth aspect of the present invention, a pair of wirings connected to the detection transistor can also function as a black matrix for a color filter.

[Brief description of the drawings]

1A and 1B are a plan view and a cross-sectional view illustrating a structure according to a first embodiment of the present invention.

FIG. 2 is a circuit diagram showing an electrical equivalent circuit of the structure shown in FIG.

FIG. 3 is a cross-sectional view showing a manufacturing step of the structure shown in FIG. 1 in the order of steps;

FIG. 4 is a cross-sectional view showing a manufacturing step of the structure shown in FIG. 1 in the order of steps;

FIG. 5 is a cross-sectional view showing a manufacturing step of the structure shown in FIG. 1 in the order of steps;

FIG. 6 is a cross-sectional view showing a manufacturing step of the structure shown in FIG. 1 in the order of steps;

FIG. 7 is a cross-sectional view showing a step of manufacturing the structure shown in FIG. 1 in the order of steps;

FIG. 8 is a cross-sectional view showing a manufacturing step of the structure shown in FIG. 1 in the order of steps;

FIG. 9 is a cross-sectional view showing a manufacturing step of the structure shown in FIG. 1 in the order of steps;

FIG. 10 is a cross-sectional view showing a step of manufacturing the structure shown in FIG. 1 in the order of steps;

11 is a cross-sectional view showing a manufacturing step of the structure shown in FIG. 1 in the order of steps;

FIG. 12 is a plan view and a cross-sectional view illustrating a structure according to a second embodiment of the present invention.

13 is a cross-sectional view showing a manufacturing step of the structure shown in FIG. 12 in the order of steps;

14 is a cross-sectional view showing a manufacturing step of the structure shown in FIG. 12 in the order of steps;

15A and 15B are a plan view and a cross-sectional view illustrating a structure according to a third embodiment of the present invention.

FIG. 16 is a circuit diagram showing an electrical equivalent circuit of the structure shown in FIG.

17A and 17B are a plan view and a sectional view showing a structure according to a fourth embodiment of the present invention.

18 is a cross-sectional view showing a manufacturing step of the structure shown in FIG. 21 in the order of steps;

19 is a cross-sectional view showing a manufacturing step of the structure shown in FIG. 21 in the order of steps;

20 is a cross-sectional view showing a manufacturing step of the structure shown in FIG. 21 in the order of steps;

21A and 21B are a plan view and a cross-sectional view illustrating a structure according to a fifth embodiment of the present invention.

FIG. 22 is a plan view and a cross-sectional view showing a structure according to a sixth embodiment of the present invention.

FIG. 23 is a conceptual diagram showing a modification of the first to sixth embodiments of the present invention.

FIG. 24 is a conceptual diagram showing a modification of the first to sixth embodiments of the present invention.

25A and 25B are a plan view and a cross-sectional view illustrating a structure of a liquid crystal display cell to which the present invention is applied.

[Explanation of symbols]

101, 201 substrate, 105, 106 protective film, 20
5b, 205r Color filter, MR _ij magnetoresistive element, Q _ij , T _ij transistor, F _ij reflective electrode, S
_i source line, G _j gate line, K _j detection gate line,
P _i input line, J _i output line.

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Shosuke Ohtsuru 2-3-2 Marunouchi, Chiyoda-ku, Tokyo Mitsui Electric Co., Ltd. (72) Inventor Taku Yamamoto 2-3-2 Marunouchi, Chiyoda-ku, Tokyo 3 F-term in Ryo Denki Co., Ltd. CC13 CC14 CC15 CC16 CC32

Claims (10)

[Claims] 1. A liquid crystal display transistor arranged in a matrix, a detection transistor provided corresponding to the liquid crystal display transistor, and a magnetic flux responsive magnetic detection element connected to the detection transistor. Equipped with a liquid crystal display capable magnetic flux detection digitizer. 2. The detection transistor and the liquid crystal display transistor are provided on the same substrate.
2. The digitizer according to claim 1, wherein the magnetic flux is detected by a liquid crystal display. 3. The digitizer according to claim 2, wherein a control electrode of the detection transistor and one of a pair of current electrodes are short-circuited. 4. The liquid crystal display electrode further comprising a liquid crystal display electrode connected to the liquid crystal display transistor, wherein the magnetic flux response type magnetic sensing element is provided on the detection transistor side with respect to the liquid crystal display electrode. Flux detection digitizer that can display liquid crystal. 5. The detection transistor is provided on a second substrate sandwiching a liquid crystal driven by the liquid crystal display transistor, together with a first substrate on which the liquid crystal display transistor is provided. A first wiring connected to the control electrode; a second wiring connected to one of the pair of current electrodes of the detection transistor; and a plurality of wirings each having a mutual boundary above the first and second wirings. Any of the liquid crystal display color filters described above is further provided on the second substrate,
2. The digitizer according to claim 1, wherein the magnetic flux is detected by a liquid crystal display. 6. A step of forming simultaneously a transistor for liquid crystal display and a transistor for detection on a substrate; and (b) a pair of wirings connected to the transistor for liquid crystal display, and the transistor for detection. (C) forming a first protective film covering the liquid crystal display transistor and the detection transistor; and (d) forming the first protective film covering the liquid crystal display transistor and the detection transistor. Forming an electrode connected to the first transistor on the first protective film; and (e) forming a magnetic flux responsive magnetic sensing element connected to the first transistor. Manufacturing method of magnetic flux detection digitizer. 7. The liquid crystal display capable magnetic flux detection digitizer according to claim 6, wherein the step (e) precedes the step (c), and the first protective film also covers the magnetic flux response type magnetic sensing element. Manufacturing method. 8. The step (e) follows the step (c), the magnetic flux responsive magnetic sensing element is formed above the first protective film, and the step (c) includes the step (c). 7) The method of manufacturing a liquid crystal display capable magnetic flux detection digitizer according to claim 6, further comprising the step of: annealing said first protective film. 9. (f) the step (d) and the step (e)
And forming a second protection film covering the first protection film and the electrode, wherein the step (c) is performed during the step (c-2) of forming a surface of the first protection film. The method according to claim 8, further comprising a step of roughening, wherein the magnetic flux response type magnetic sensing element is formed on the second protective film. 10. A step of forming, on a substrate, a pair of wires, a detecting transistor and a magnetic flux responsive magnetic detecting element connected between the pair of wires, and Forming a color filter for liquid crystal display that covers a transistor and the magnetic flux responsive magnetic sensing element and exposes the pair of wirings.