JP2000068404A - Substrate for bga package - Google Patents

Substrate for bga package

Info

Publication number
JP2000068404A
JP2000068404A JP10232723A JP23272398A JP2000068404A JP 2000068404 A JP2000068404 A JP 2000068404A JP 10232723 A JP10232723 A JP 10232723A JP 23272398 A JP23272398 A JP 23272398A JP 2000068404 A JP2000068404 A JP 2000068404A
Authority
JP
Japan
Prior art keywords
substrate
region
semiconductor chip
bga package
bond
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10232723A
Other languages
Japanese (ja)
Inventor
Kazuaki Ano
一章 阿野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Japan Ltd
Original Assignee
Texas Instruments Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Japan Ltd filed Critical Texas Instruments Japan Ltd
Priority to JP10232723A priority Critical patent/JP2000068404A/en
Publication of JP2000068404A publication Critical patent/JP2000068404A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Abstract

PROBLEM TO BE SOLVED: To provide a substrate for BGA package that can respond to and mount a plurality of sizes for semiconductor chips. SOLUTION: This substrate 10 has a pattern 11, comprising a plurality of electrically separated conductor lines 12 on its surface on which a semiconductor chip is mounted. Each conductor line has ball bonding regions 12a positioned on a via hole, a first bonding area 12b for wire-bonding a semiconductor chip positioned outside of a region on the substrate, where the via holes are formed and a second bonding region 12c for wire-bonding a semiconductor chip positioned inside a region on the substrate where the via holes are formed.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、BGAパッケージ
用の基板に関し、特に、サイズの異なる複数種類の半導
体チップを実装可能な基板に関する。
The present invention relates to a substrate for a BGA package, and more particularly to a substrate on which a plurality of types of semiconductor chips having different sizes can be mounted.

【0002】[0002]

【従来の技術】BGA(Ball Grid Array)パッケージ
は、パッケージの底面に半田ボールを2次元的に配列し
た表面実装型の半導体パッケージである。QFP(Quad
Flat Package)等のリードフレームを用いたパッケージ
に比して、BGAパッケージは、単位面積当たりの接続
端子数を高めることができ、高密度実装を実現するに適
している。
2. Description of the Related Art A BGA (Ball Grid Array) package is a surface-mount type semiconductor package in which solder balls are two-dimensionally arranged on the bottom surface of a package. QFP (Quad
Compared with a package using a lead frame such as a Flat Package, the BGA package can increase the number of connection terminals per unit area and is suitable for realizing high-density mounting.

【0003】図6は、従来からの一般的なBGAパッケ
ージの半導体装置を示している。半導体装置60は、方
形の絶縁基板61の底面に、複数の半田ボール62を2
次元的に備えている。絶縁基板61の上面には、フォト
リソグラフィ技術により導体パターン63が形成され、
ビアホール61aを通して半田ボール62に電気的に接
続されている。半導体チップ64は、ダイペーストによ
って絶縁基板61上に接着され、ワイヤボンディングで
与えられる導体ワイヤ65で、導体パターン63との電
気的な接続が達成されている。半導体チップ64は、モ
ールド型内に溶融した樹脂を注入して形成される樹脂パ
ッケージ材66に覆われる。
FIG. 6 shows a conventional general BGA package semiconductor device. The semiconductor device 60 includes a plurality of solder balls 62 on a bottom surface of a rectangular insulating substrate 61.
Dimensionally provided. A conductor pattern 63 is formed on the upper surface of the insulating substrate 61 by a photolithography technique,
It is electrically connected to the solder ball 62 through the via hole 61a. The semiconductor chip 64 is adhered on the insulating substrate 61 by a die paste, and the electrical connection with the conductor pattern 63 is achieved by the conductor wires 65 provided by wire bonding. The semiconductor chip 64 is covered with a resin package material 66 formed by injecting a molten resin into a mold.

【0004】図7は、樹脂パッケージ材66を除去した
状態における半導体装置60の平面図を示している。図
では、半導体チップ64及び導体ワイヤ65の一部を省
略することで、絶縁基板61上の導体パターン63の配
列が明瞭に示されている。導体パターン63を構成する
各線路70の一端は、ビアホール上の領域70aであ
る。各線路70の他端は、絶縁基板61の各辺まで延び
ている。そして、絶縁基板61の各辺に延びた線路70
の途中に、絶縁基板の辺に沿ってボンド領域70bが設
けられている。ワイヤボンディングの工程で、半導体チ
ップ64の各電極パッド64aに導体ワイヤ65の一端
がボンディングされ、外側に引き延ばされて、その他端
側が上記ボンド領域70bにボンディングされる。
FIG. 7 is a plan view of the semiconductor device 60 with the resin package material 66 removed. In the figure, the arrangement of the conductor patterns 63 on the insulating substrate 61 is clearly shown by omitting a part of the semiconductor chip 64 and the conductor wires 65. One end of each line 70 constituting the conductor pattern 63 is a region 70a on the via hole. The other end of each line 70 extends to each side of the insulating substrate 61. The line 70 extending to each side of the insulating substrate 61
Is provided with a bond region 70b along the side of the insulating substrate. In the wire bonding step, one end of the conductor wire 65 is bonded to each electrode pad 64a of the semiconductor chip 64, extended outward, and the other end is bonded to the bond region 70b.

【0005】一方、半導体チップは、内部に作り込まれ
る回路素子の数、回路設計及び設計ルールの違いによ
り、異なるサイズのものが多数供給されている。BGA
パッケージにおいて、同種の絶縁基板上に異なるサイズ
の半導体チップを搭載できれば、チップサイズ毎に絶縁
基板を用意する必要がなく、製造コストが大幅に削減で
きるという利点がある。ワイヤボンディングを用いた半
導体チップの実装方法では、導体ワイヤの長さを調整す
ることにより、これに対応することが可能である。
On the other hand, a large number of semiconductor chips of different sizes are supplied depending on the number of circuit elements to be built therein, circuit designs, and differences in design rules. BGA
In a package, if semiconductor chips of different sizes can be mounted on the same type of insulating substrate, there is no need to prepare an insulating substrate for each chip size, and there is an advantage that the manufacturing cost can be greatly reduced. A semiconductor chip mounting method using wire bonding can cope with this by adjusting the length of the conductor wire.

【0006】[0006]

【発明が解決しようとする課題】しかしながら、絶縁基
板のサイズに比して小さいサイズの半導体チップを実装
する場合、1つの問題が生じる。半導体チップのサイズ
が小さくなると、電極パッドからボンド領域までの距離
が長くなり、従って、これらを結ぶ導体ワイヤの長さが
長くなる。モールド成型時に、溶融したモールド樹脂の
流れによって各導体ワイヤは、圧力を受け変形する。導
体ワイヤの長さが長ければ、圧力による変形量は大きく
なり、隣り合う導体ワイヤ同士が接触し、ショートする
危険性が増大する。また、長い導体ワイヤは、その電気
的特性を低下させるので、できるだけ電極パッドとボン
ド領域との距離を短くすることが好ましい。
However, when a semiconductor chip having a size smaller than the size of the insulating substrate is mounted, one problem occurs. As the size of the semiconductor chip decreases, the distance from the electrode pad to the bond region increases, and therefore, the length of the conductor wire connecting them increases. At the time of molding, each conductor wire is deformed under pressure by the flow of the molten mold resin. If the length of the conductor wire is long, the amount of deformation due to pressure increases, and the risk of short-circuiting increases due to contact between adjacent conductor wires. Further, since a long conductor wire deteriorates its electrical characteristics, it is preferable to shorten the distance between the electrode pad and the bond region as much as possible.

【0007】そこで本発明の目的は、複数のサイズの半
導体チップに対応し、これを実装することができるBG
Aパッケージ用の基板を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a BG that can be mounted on a plurality of semiconductor chips.
An object of the present invention is to provide a substrate for an A package.

【0008】本発明の別の目的は、実装される半導体チ
ップのサイズに拘わらず、導体ワイヤの長さを一定以下
に保つことができるBGAパッケージ用の基板を提供す
ることにある。
Another object of the present invention is to provide a substrate for a BGA package capable of keeping the length of a conductor wire constant or less irrespective of the size of a semiconductor chip to be mounted.

【0009】[0009]

【課題を解決するための手段】本発明は、第1又は第2
のサイズの半導体チップを実装可能なBGAパッケージ
用の基板に関する。本発明の基板は、上記半導体チップ
を実装する第1の面と、複数の半田ボールを2次元的に
実装する第2の面とを有する絶縁性の基材であって、上
記半田ボールの実装位置に対応してビアホールを有する
ものと、上記基材の第1の面に形成され、電気的に分離
された複数の導体線路からなるパターンを備える。本発
明において上記各導体線路は、上記ビアホール上に配置
され該ビアホールを介して上記半田ボールと電気的に接
続されるボール接続領域と、上記ビアホールを形成した
基材上の領域よりも外側に配置される上記第1のサイズ
の半導体チップをワイヤボンディングするための第1の
ボンド領域であって、相互に上記基材の辺に沿って並べ
られるものと、上記ビアホールを形成した基材上の領域
内に配置される上記第2のサイズの半導体チップをワイ
ヤボンディングするための第2のボンド領域であって、
相互に上記基材の辺に沿って並べられるものとを備え
る。
SUMMARY OF THE INVENTION The present invention is directed to a first or second embodiment.
The present invention relates to a substrate for a BGA package on which a semiconductor chip having a size of 2.times. A substrate according to the present invention is an insulating base material having a first surface on which the semiconductor chip is mounted and a second surface on which a plurality of solder balls are two-dimensionally mounted, wherein the mounting of the solder ball is performed. It has a via hole corresponding to a position, and a pattern formed on a first surface of the base material and formed of a plurality of electrically separated conductor lines. In the present invention, each of the conductor lines is disposed on the via hole and electrically connected to the solder ball via the via hole, and is disposed outside a region on the substrate on which the via hole is formed. A first bond area for wire bonding the semiconductor chip of the first size, wherein the first bond area is arranged along a side of the base material, and a first bond area is formed on the base material in which the via hole is formed. A second bond region for wire bonding the semiconductor chip of the second size disposed therein.
Ones arranged along the sides of the base material with each other.

【0010】本発明はまた、上記各導体線路が、上記第
2のボンド領域の列よりも更に内側に配置される第3の
サイズの半導体チップをワイヤボンディングするための
第3のボンド領域であって、相互に上記基材の辺に沿っ
て並べられるものを更に備えることができる。
According to the present invention, each of the conductor lines is a third bond region for wire bonding a semiconductor chip of a third size disposed further inside than the row of the second bond region. In addition, it is possible to further include ones that are mutually arranged along the side of the base material.

【0011】[0011]

【発明の実施の形態】以下、本発明の実施形態を図面に
沿って説明する。図1は、本発明の一実施形態に係る14
4ピン対応のBGAパッケージに用いられる基板の平面
図である。図において、方形の絶縁基板10の表面に、
銅その他の金属からなる導体パターン11が規則的に配
列されている。導体パターン11は、絶縁基板10上に
金属箔をラミネートし、フォトリソグラフィ技術により
不要部分を除去する一般的方法により得ることができ
る。なお、上記絶縁基板10は、一つの実施例で、可撓
性、例えばポリイミド樹脂フィルムによるものである
が、硬質、例えばガラスエポキシ樹脂によるものであっ
ても良い。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows one embodiment of the present invention.
FIG. 3 is a plan view of a substrate used for a 4-pin compatible BGA package. In the figure, on the surface of a rectangular insulating substrate 10,
Conductor patterns 11 made of copper or another metal are regularly arranged. The conductor pattern 11 can be obtained by a general method of laminating a metal foil on the insulating substrate 10 and removing unnecessary portions by a photolithography technique. Although the insulating substrate 10 is made of a flexible material such as a polyimide resin film in one embodiment, it may be made of a hard material such as a glass epoxy resin.

【0012】導体パターン11は、基本的には、相互に
電気的に分離された多数の線路12で構成される。各線
路12は、絶縁基板10に形成されたビアホール10a
上に位置する方形の領域、すなわちボール接続領域12
aを有する。幾つかの線路12(特に、基板中央寄りの
線路)では、ボール接続領域12aは線路の一端に位置
するが、他の幾つかの線路12(特に、基板の周辺寄り
の線路)では、線路の途中に位置している。従って、見
方を変えれば、ボール接続領域12aから1又は2本の
細い線路が延びている。
The conductor pattern 11 is basically composed of a large number of lines 12 electrically separated from each other. Each line 12 has a via hole 10 a formed in the insulating substrate 10.
The upper rectangular area, ie ball connection area 12
a. In some lines 12 (especially lines near the center of the substrate), the ball connection area 12a is located at one end of the lines, while in some other lines 12 (especially lines near the periphery of the substrate), It is located on the way. Therefore, from a different point of view, one or two narrow lines extend from the ball connection region 12a.

【0013】ボール接続領域12aから延びる1本の細
い線路は、他のボール接続領域12aの間を通って、絶
縁基板10の四辺に達しており、その線路上に、第1の
ボンド領域12bが形成されている。第1のボンド領域
12bは、最も外側のボール接続領域12aの列よりも
外側で、一列に並んで配置されている。なお、第1のボ
ンド領域12bの外側に延びる線路の部分は、基板上に
搭載された半導体チップの電気的特性テストの際にプロ
ーブを接触させるために用いられる。一つの実施例で、
12mm角の絶縁基板に対し、基板の辺から0.625mm(基板の
中央から5.375mm)の位置に、上記第1のボンド領域12
bを配置した。良好なワイヤボンディングを実現するた
めに、基板上に実装される半導体チップの辺から第1の
ボンド領域12bまでの距離は、少なくとも0.3mm必要
である。そのため、第1のボンド領域12bを用いてワ
イヤボンディングを行う場合、およそ10.15mm角までの
半導体チップが実装可能である。
One narrow line extending from the ball connection region 12a passes between the other ball connection regions 12a and reaches four sides of the insulating substrate 10, and a first bond region 12b is formed on the line. Is formed. The first bond regions 12b are arranged in a line outside the row of the outermost ball connection areas 12a. The portion of the line extending outside the first bond region 12b is used for contacting a probe at the time of an electrical characteristic test of a semiconductor chip mounted on a substrate. In one embodiment,
The first bonding region 12 is placed at a position 0.625 mm from the side of the substrate (5.375 mm from the center of the substrate) with respect to the 12 mm square insulating substrate.
b. In order to realize good wire bonding, the distance from the side of the semiconductor chip mounted on the substrate to the first bond region 12b needs to be at least 0.3 mm. Therefore, when wire bonding is performed using the first bond region 12b, a semiconductor chip up to about 10.15 mm square can be mounted.

【0014】本発明において、各線路12は、更に第2
のボンド領域12cを有する。第2のボンド領域12c
は、外側から2列目及び3列目のボール接続領域12a
の列の間に、一列に並んで配置されている。一つの実施
例で、基板中央から3.6mmの位置に、上記第2のボンド
領域12cを配置した。この場合、上記第2のボンド領
域12cは、およそ6.6mm角以下のサイズの半導体チッ
プをボンディングするために用いることができる。幾つ
かの線路では、第2のボンド領域12cは、ボール接続
領域12aから延びる上記第1のボンド領域12bを配
置した線路上、すなわちボール接続領域12aと第1の
ボンド領域12bとの間に配置され、他の幾つかの線路
では、ボール接続領域12aから延びるもう一方の線路
の先端に配置される。なお、実施例で、各線路12の幅
は30μm、ボール接続領域12aのサイズは0.475×0.47
5mm、第1及び第2のボンド領域12b、12cのサイ
ズは0.1×0.15mmである。
In the present invention, each line 12 further includes a second
Has a bonding region 12c. Second bond region 12c
Are ball connection areas 12a in the second and third rows from the outside
Are arranged side by side in a row. In one embodiment, the second bond region 12c is arranged at a position 3.6 mm from the center of the substrate. In this case, the second bond region 12c can be used for bonding a semiconductor chip having a size of about 6.6 mm square or less. In some lines, the second bond region 12c is disposed on the line on which the first bond region 12b extending from the ball connection region 12a is disposed, that is, between the ball connection region 12a and the first bond region 12b. In some other lines, it is arranged at the tip of the other line extending from the ball connection area 12a. In the embodiment, the width of each line 12 is 30 μm, and the size of the ball connection region 12a is 0.475 × 0.47.
5 mm, the size of the first and second bond regions 12b and 12c is 0.1 × 0.15 mm.

【0015】図2及び図3は、外側のボンド領域、すな
わち第1のボンド領域12bを用いて、半導体チップ1
3を絶縁基板10上に実装する例を示したものである。
図において、半導体チップ13は、第2のボンド領域1
2cで囲まれる領域よりも大きい平面的サイズを有して
いる。半導体チップ13の各電極パッド13aは、導体
ワイヤ14により、第1のボンド領域12bに電気的に
接続されている。
FIGS. 2 and 3 show a semiconductor chip 1 using an outer bond region, that is, a first bond region 12b.
3 shows an example in which the device 3 is mounted on an insulating substrate 10.
In the figure, the semiconductor chip 13 is in the second bond region 1
It has a larger planar size than the area surrounded by 2c. Each electrode pad 13a of the semiconductor chip 13 is electrically connected to the first bond region 12b by a conductor wire 14.

【0016】一方、図4及び図5は、内側のボンド領
域、すなわち第2のボンド領域12cを用いて、半導体
チップ13を絶縁基板10上に実装する例を示したもの
である。図において、半導体チップ13は、内側の第2
のボンド領域12cで囲まれる領域よりも更に小さい平
面的サイズを有している。半導体チップ13の各電極パ
ッド13aは、導体ワイヤ14により、第2のボンド領
域12cに電気的に接続されている。
FIGS. 4 and 5 show an example in which the semiconductor chip 13 is mounted on the insulating substrate 10 using the inner bond region, that is, the second bond region 12c. In the figure, the semiconductor chip 13
Has a smaller planar size than the region surrounded by the bond region 12c. Each electrode pad 13a of the semiconductor chip 13 is electrically connected to the second bond region 12c by a conductor wire 14.

【0017】以上、本発明の実施形態を図面に沿って説
明した。本発明の適用範囲が、上記実施形態において示
した事項に限定されないことは明らかである。実施形態
においては、内側及び外側、すなわち第1及び第2のボ
ンド領域を備えた基板を示したが、更にその内側に第3
のボンド領域を形成することによって、より小さいサイ
ズの半導体チップを実装可能なように基板を構成するこ
ともできる。また、上記実施形態で示した導体パターン
の配列、形状、寸法等は、本発明の一実施形態に過ぎ
ず、半田ボールの数や配置等によって種々変更すること
ができる。例えば、ボール接続領域12aをビアホール
10aの近傍において絶縁基板10における半田ボール
の実装面側、すなわちボンド領域12b及び12cの形
成面側と反対側に形成し、ここに半田ボールを実装する
ようにしても良い。この場合、ボール接続領域12aと
各ボンド領域とはビアホール10aを介して電気的に接
続されることとなる。
The embodiment of the present invention has been described with reference to the drawings. Obviously, the scope of application of the present invention is not limited to the items shown in the above embodiment. In the embodiment, the substrate having the inside and outside, that is, the substrate having the first and second bond regions is shown.
By forming the bond region of the above, the substrate can be configured so that a semiconductor chip of a smaller size can be mounted. Further, the arrangement, shape, dimensions, and the like of the conductor patterns shown in the above embodiment are merely embodiments of the present invention, and can be variously changed depending on the number and arrangement of the solder balls. For example, the ball connection region 12a is formed in the vicinity of the via hole 10a on the surface of the insulating substrate 10 on which the solder balls are mounted, that is, on the side opposite to the surface on which the bond regions 12b and 12c are formed, and the solder balls are mounted thereon. Is also good. In this case, the ball connection region 12a and each bond region are electrically connected via the via hole 10a.

【0018】[0018]

【発明の効果】以上の如く本発明によれば、BGAパッ
ケージ用の基板において、複数のサイズの半導体チップ
に対応し、これを実装することができる。複数種類の半
導体チップに対して共通の基板を用いることによって、
半導体装置の量産コストを低減することができる。
As described above, according to the present invention, a semiconductor chip of a plurality of sizes can be mounted on a substrate for a BGA package. By using a common substrate for multiple types of semiconductor chips,
The mass production cost of the semiconductor device can be reduced.

【0019】この場合に、半導体チップのサイズに応じ
て第1又は第2のボンド領域を使い分けることで、導体
ワイヤ長を一定以下に保つことができ、モールド注入時
におけるワイヤ間ショートの問題が回避される。また、
短い導体ワイヤは、長い導体ワイヤに比して電気的特性
に優れるので好適である。
In this case, by properly using the first or second bond region according to the size of the semiconductor chip, the length of the conductor wire can be kept to a certain value or less, and the problem of short-circuit between wires during mold injection is avoided. Is done. Also,
Short conductor wires are preferred because they have better electrical properties than long conductor wires.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施形態に係るBGAパッケージに
用いられる基板の平面図である。
FIG. 1 is a plan view of a substrate used for a BGA package according to an embodiment of the present invention.

【図2】外側のボンド領域を用いて、半導体チップを絶
縁基板上に実装する例を示した平面図である。
FIG. 2 is a plan view showing an example in which a semiconductor chip is mounted on an insulating substrate using an outer bond region.

【図3】図2に対応する半導体パッケージの断面図であ
る。
FIG. 3 is a sectional view of the semiconductor package corresponding to FIG. 2;

【図4】内側のボンド領域を用いて、半導体チップを絶
縁基板上に実装する例を示した平面図である。
FIG. 4 is a plan view showing an example in which a semiconductor chip is mounted on an insulating substrate using an inner bond region.

【図5】図4に対応する半導体パッケージの断面図であ
る。
FIG. 5 is a sectional view of the semiconductor package corresponding to FIG. 4;

【図6】従来からの一般的なBGAパッケージの半導体
装置の断面図である。
FIG. 6 is a cross-sectional view of a conventional general BGA package semiconductor device.

【図7】樹脂パッケージ材を除去した状態における図6
の半導体装置の平面図である。
FIG. 7 shows a state where a resin package material is removed;
3 is a plan view of the semiconductor device of FIG.

【符号の説明】[Explanation of symbols]

10 絶縁基板 10a ビアホール 11 導体パターン 12 線路 12a ボール接続領域 12b 第1のボンド領域 12c 第2のボンド領域 13 半導体チップ 13a 電極パッド 14 導体ワイヤ DESCRIPTION OF SYMBOLS 10 Insulating substrate 10a Via hole 11 Conductor pattern 12 Line 12a Ball connection region 12b First bond region 12c Second bond region 13 Semiconductor chip 13a Electrode pad 14 Conductor wire

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 第1又は第2のサイズの半導体チップを
実装可能なBGAパッケージ用の基板であって、 上記半導体チップを実装する第1の面と、複数の半田ボ
ールを2次元的に実装する第2の面とを有する絶縁性の
基材であって、上記半田ボールに対応してビアホールを
有するものと、 電気的に分離された複数の導体線路からなるパターンで
あって、上記各導体線路が、 上記半田ボールと電気的に接続されるボール接続領域
と、 上記ビアホールを形成した基材上の領域よりも外側に配
置される上記第1のサイズの半導体チップをワイヤボン
ディングするための第1のボンド領域であって、相互に
上記基材の辺に沿って並べられるものと、 上記ビアホールを形成した基材上の領域内に配置される
上記第2のサイズの半導体チップをワイヤボンディング
するための第2のボンド領域であって、相互に上記基材
の辺に沿って並べられるものと、を備えたBGAパッケ
ージ用の基板。
1. A BGA package substrate on which a semiconductor chip of a first or second size can be mounted, wherein a first surface on which the semiconductor chip is mounted and a plurality of solder balls are two-dimensionally mounted. An insulating base material having a second surface and a via hole corresponding to the solder ball, and a pattern comprising a plurality of electrically separated conductor lines, A first line for wire-bonding a semiconductor chip of the first size, in which a line is disposed outside a region on the substrate on which the via hole is formed, and a ball connection region electrically connected to the solder ball. A first bond region, which is arranged along the side of the base material and a second size semiconductor chip disposed in the region on the base material where the via hole is formed; A second bonding area for loading a substrate for a BGA package which includes a those arranged along the sides of each other on the substrate, the.
【請求項2】 上記各導体線路が、上記第2のボンド領
域の列よりも更に内側に配置される第3のサイズの半導
体チップをワイヤボンディングするための第3のボンド
領域であって、相互に上記基材の辺に沿って並べられる
ものを更に備えた請求項1記載のBGAパッケージ用の
基板。
2. The semiconductor device according to claim 1, wherein each of the conductor lines is a third bond region for wire bonding a semiconductor chip of a third size disposed further inside than a row of the second bond region. 2. The substrate for a BGA package according to claim 1, further comprising a substrate arranged along a side of said base material.
【請求項3】 上記ボール接続領域が、上記ビアホール
を覆う略方形の領域であり、上記各ボンド領域が、上記
ボール接続領域と細い線路により結ばれている請求項1
又は2記載のBGAパッケージ用の基板。
3. The ball connection region is a substantially rectangular region covering the via hole, and each of the bond regions is connected to the ball connection region by a thin line.
Or the substrate for a BGA package according to 2.
【請求項4】 上記第2のボンド領域の列が、隣り合う
ボール接続領域の列の間に配置されている請求項3記載
のBGAパッケージ用の基板。
4. The substrate for a BGA package according to claim 3, wherein the rows of the second bond areas are arranged between rows of adjacent ball connection areas.
【請求項5】請求項1、2、3又は4記載の基板を備え
たBGAパッケージ。
5. A BGA package comprising the substrate according to claim 1, 2, 3 or 4.
JP10232723A 1998-08-19 1998-08-19 Substrate for bga package Pending JP2000068404A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10232723A JP2000068404A (en) 1998-08-19 1998-08-19 Substrate for bga package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10232723A JP2000068404A (en) 1998-08-19 1998-08-19 Substrate for bga package

Publications (1)

Publication Number Publication Date
JP2000068404A true JP2000068404A (en) 2000-03-03

Family

ID=16943786

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10232723A Pending JP2000068404A (en) 1998-08-19 1998-08-19 Substrate for bga package

Country Status (1)

Country Link
JP (1) JP2000068404A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7151316B2 (en) 2003-07-09 2006-12-19 Renesas Technology Corp. Semiconductor device
JP2008124520A (en) * 1998-09-11 2008-05-29 Fujitsu Ltd Universal multichip interconnect system

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008124520A (en) * 1998-09-11 2008-05-29 Fujitsu Ltd Universal multichip interconnect system
JP4598836B2 (en) * 1998-09-11 2010-12-15 富士通株式会社 General-purpose multichip interconnection system
US7151316B2 (en) 2003-07-09 2006-12-19 Renesas Technology Corp. Semiconductor device

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