JP2000057526A - Magneto-resistance effect type magnet sensing element and magnetic head, and their manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enhance magnetic reliability between an MR element and a hard magnetic film and to stabilize the MR element magnetically by controlling the alignment of the hard magnetic film with an underlying layer and eliminating the underlying layer from the joined part of the MR element and the hard magnetic film. SOLUTION: An SV type MR element is such that the side face 11a, 11b which becomes a joined part to a hard magnetic film 12a, 12b are formed obliquely against the substrate 2. The hard magnetic film 12a, 12b are formed on the base film, and is thereby hcp (011) aligned. In addition, no base film is arranged in the joined part of the SV type MR element 11 and the hard magnetic film 12a, 12b, which come into direct contact with each other. Such direct joining can increase magnetic bonding between the SV type MR element 11 and the hard magnetic film 12a, 12b, enabling a vertical bias magnetic field to be imparted to the SV type MR element effectively and stably.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a magneto-resistance effect type magnetic head element, a magneto-resistance effect type magnetic head, and a method of manufacturing the same.

[0002]

2. Description of the Related Art A magnetoresistive element (hereinafter referred to as MR) which senses magnetically recorded data using a magnetoresistance effect.
It is called an element. (Japanese Patent Application Laid-Open Nos. Hei 3-125311, Hei 7-57223, Hei 7-302414, Hei 6-334237, Hei 6-80825) have been studied. No.). The most basic problem in putting a magnetoresistive effect type magnetic head using an MR element (hereinafter, referred to as an MR head) to practical use is Barkhausen noise due to movement of a domain wall inside the MR element.

As a method of solving this problem, a hard magnetic film is disposed adjacent to both ends of an MR element, so that the
It has been proposed to apply a longitudinal bias to the device.

FIG. 10 is a sectional view showing an example of the configuration of a conventional MR head 30. As shown in FIG. This MR head 30 is mounted on the substrate 3
1, a first insulating film 32 formed on a substrate 31, an MR element 33 formed on the first insulating film 32, a base film 34 disposed on both sides of the MR element 33, and a base film. And a hard magnetic film 35a formed on the hard magnetic film 35a.
The lead electrode film 36a formed thereon and the hard magnetic film 35
b, and a second insulating film 37 formed on the lead electrode films 36a and 36b.
And a soft magnetic film 38 formed on the second insulating film 37. Here, in the MR head 30, FIG.
0, the MR element 33 and the hard magnetic films 35a, 35
b to improve electrical reliability.
1 is formed not obliquely but vertically. The diagonally formed bonding surface is formed by ion-etching the MR element 33 using a two-layer resist pattern as a mask, as described later.
No.).

[0005] With the increase in recording density, new problems have been highlighted. The first problem is to increase the sensitivity of the MR element, and the other problem is how to apply a stable vertical bias to the MR element having a reduced width as the track is narrowed. . To increase the sensitivity of the MR element, the use of a spin valve film exhibiting a giant magnetoresistance effect has been proposed. [[1] B. Dieny, VSSperiosu, SM
etin, SSPParkin, BAGurney, P. Baumgart and DRWi
lhoit, J. Appl. Phys. 69, 4774 (1991). [2] B. Dieny, V.
S.Speriosu, SSPParkin, BAGurney, DRWilhoit and
D. Mauri, Phys. Rev. B43, 1297 (1991). [3] B. Dieny,
VSSperiosu, BAGurney, SSPParkin, DRWilhoit,
KPRoche, S.Metin, DTPeterson and S.Nadimi, J.Mag
n.Magn. Master. 93, 101 (1991). [4] B. Dieny, P. Hum
Bert, VSSperiosu, S.Metin, BAGurney, P.Baumgart an
d H. Lefakis, Phys. Rev. B45, 806 (1992).

[0006]

However, there are few reports on effective means for stably applying a longitudinal bias to an MR element even when a narrow track is employed.

The present inventors first analyzed the factors for stabilizing the vertical bias. As a result of the study, in order to stabilize the longitudinal bias and efficiently manufacture an MR head without Barkhausen noise, the crystal orientation of the hard magnetic film is controlled, and the MR element and the hard magnetic film are controlled and closely contacted. It has been found that it is important to bond them.

As a material of the hard magnetic film, a hexagonal fine structure (h
CoC with cp: hexsagonal closest packing)
r, CoPt, CoCrPt and the like have been proposed. The present inventors have focused on the crystal orientation of these hard magnetic materials and analyzed the relationship with the magnetic properties. Indices for measuring the potential of the hard magnetic material include a coercive force (Hc) and a residual susceptibility (Mr / Ms: a ratio between residual magnetization and saturation magnetization in no magnetic field). In order to obtain high controllable Hc or Mr / Ms with good controllability, it is necessary to form a hard magnetic material on a Cr-containing alloy base film and to orient the hard magnetic material in hcp (011) orientation. Here, hcp (011) indicates a state in which the (011) direction of the hexagonal close-packed structure (hcp) is oriented in the thickness direction of the film.

FIG. 11 shows the relationship between the thickness of a Cr-containing underlayer film and the Hc and Mr of a CoPtCr film formed as a hard magnetic film to a thickness of 30 nm on the underlayer film. As shown in FIG. 11, Hc and Mr of the hard magnetic film depend on the thickness of the underlayer.
It can be seen that is significantly deteriorated. As a result of TEM analysis, it was found that when the thickness of the underlayer is 3 nm or less, the hcp (011) orientation of the CoCrPt film formed on the underlayer is disturbed because the underlayer grows in an island shape and does not become a continuous film. .
By setting the thickness of the underlayer to 3 nm or more, Hc required for practical use
And Mr / Ms were obtained. Further, FIG.
It is understood from FIG. 1 that Hc and Mr / Ms gradually increase as the thickness of the underlayer increases.

In order to obtain a stable longitudinal bias effect,
It is preferable that Hc and Mr / Ms of the hard magnetic film be as large as possible. Therefore, it is more preferable that the thickness of the base film is 5 nm or more. Further, in manufacturing the MR head, a heat treatment is required for a magnetic initialization of a magnetic material and a photoresist curing process, but it is necessary to minimize the influence on such a thermal disturbance. This is important for improving the yield. Also in this regard, it is preferable to design Hc and Mr / Ms to be as large as possible.

However, in the conventional MR head shown in FIG. 10, the Hc of the hard magnetic films 35a, 35b
After the MR element 33 is ion-etched, the base film 34 is formed to be sufficiently thick,
Further, when the hard magnetic films 35a and 35b are formed thereon, the MR element 33 formed obliquely and the hard magnetic films 35a and 35b are formed.
Since the base film 34 is also formed thick at the junction with the base 35b, the magnetic continuity between the hard magnetic films 35a and 35b and the MR element 33 is weakened, and a sufficient vertical bias cannot be obtained.

The present invention has been proposed in view of the above-mentioned conventional circumstances, and has a magnetoresistive effect type magnetic head having improved magnetic continuity between a hard magnetic film and an MR element, and a method of manufacturing the same. The aim is to provide a method.

[0013]

According to the present invention, there is provided a magneto-resistance effect type magnetic sensing element, comprising: a magneto-resistance effect element; a hard magnetic film disposed at both ends of the magneto-resistance effect element; And a base film to be formed. In the magneto-resistance effect type magnetic head, the joining surface between the magneto-resistance effect element and the hard magnetic film is formed obliquely with respect to the surface of the magneto-resistance effect element. The semiconductor device is characterized in that the hard magnetic film is bonded to the hard magnetic film without interposing the base film.

In the above-described magnetoresistive element according to the present invention, the magnetoresistive element is magnetically stabilized by the hard magnetic films disposed at both ends of the magnetoresistive element. . Further, in this MR head, since the joining surface between the magnetoresistive element and the hard magnetic film is formed obliquely, the contact area between the magnetoresistive element and the hard magnetic film is increased, and the sense current is hardened. The contact resistance when supplying to the magnetoresistive element via the magnetic film is reduced. Further, in the magneto-resistance effect type magnetic head, since the magneto-resistance effect element and the hard magnetic film are joined without interposing the base film, the magnetic resistance between the magneto-resistance effect element and the hard magnetic film is increased. Increases reliability.

A magnetoresistive head of the present invention is a magnetoresistive head having a magnetoresistive element, wherein the magnetoresistive element has a magnetoresistive element; A hard magnetic film disposed on both ends of the magnetoresistive element; and a base film serving as a base of the hard magnetic film. In the magneto-resistance effect type magnetic head, the joining surface between the magneto-resistance effect element and the hard magnetic film is formed obliquely with respect to the surface of the magneto-resistance effect element. The semiconductor device is characterized in that the hard magnetic film is bonded to the hard magnetic film without interposing the base film.

In the above-described magneto-resistance effect type magnetic head according to the present invention, the magneto-resistance effect element is magnetically stabilized by the hard magnetic films disposed at both ends of the magneto-resistance effect element. Further, in this MR head, since the joining surface between the magnetoresistive element and the hard magnetic film is formed obliquely, the contact area between the magnetoresistive element and the hard magnetic film is increased, and the sense current is hardened. The contact resistance when supplying to the magnetoresistive element via the magnetic film is reduced. Further, in the magneto-resistance effect type magnetic head, since the magneto-resistance effect element and the hard magnetic film are joined without interposing the base film, the magnetic resistance between the magneto-resistance effect element and the hard magnetic film is increased. Increases reliability.

According to the present invention, there is provided a method of manufacturing a magnetoresistive effect type magnetic sensing element, comprising: forming a base film on a substrate; and forming the base film on the base film formed in the base film forming step. A magnetoresistive film forming step of forming a magnetoresistive film serving as the magnetoresistive element, and applying a photoresist on the magnetoresistive film formed in the magnetoresistive film forming step; A patterning step of patterning into a shape,
The magnetoresistive film exposed from the photoresist patterned in the patterning step and a part of the base film are removed by etching to form the magnetoresistive element, and a side surface of the magnetoresistive element is formed. An etching step of forming the substrate obliquely with respect to the substrate,
A hard magnetic film forming step of forming a hard magnetic film on at least both ends of the magnetoresistive effect element formed in the etching step and the base film partially removed in the etching step. It is characterized by having.

In the method of manufacturing a magneto-resistance effect type magnetic sensing element according to the present invention as described above, a base film is formed before a magneto-resistance effect film is formed and etching is performed to form the magneto-resistance effect element. Part of the base film is removed and a hard magnetic film is formed on the base film, so that the hard magnetic film can be formed without interposing the base film at the junction between the magnetoresistive element and the hard magnetic film. A film is formed on the base film.

The method of manufacturing a magnetoresistive head according to the present invention is a method of manufacturing a magnetoresistive head having a magnetoresistive element, wherein a base film is formed on a substrate. A base film forming step, and a magnetoresistive film forming step of forming a magnetoresistive film serving as the magnetoresistive element on the base film formed in the base film forming step;
A patterning step of applying a photoresist on the magnetoresistive film formed in the magnetoresistive film forming step and patterning the photoresist into a predetermined shape; and a magnetic layer exposed from the photoresist patterned in the patterning step. An etching step of forming the magnetoresistive element by removing the resistive film and a part of the base film by etching, and forming a side surface of the magnetoresistive element obliquely with respect to the substrate; A step of forming a hard magnetic film on both ends of the magnetoresistive element formed in the etching step, and forming a hard magnetic film on the base film partially removed in the etching step. It is characterized by.

In the method of manufacturing a magneto-resistance effect type magnetic head according to the present invention as described above, a base film is formed before a magneto-resistance effect film is formed, and when a magneto-resistance effect element is formed by etching. Since the hard magnetic film is formed on the base film by removing a part of the base film, the hard magnetic film can be lowered without sandwiching the base film at the junction between the magnetoresistive element and the hard magnetic film. It is formed on the ground film.

[0021]

Embodiments of the present invention will be described below.

FIG. 1 is a sectional view showing an example of the configuration of an MR head according to the present invention. FIG. 1 is a cross-sectional view of the MR head 1 in a plane parallel to a surface facing the magnetic recording medium, and shows only an enlarged portion near a portion to be a magnetic sensing portion. This MR head 1 includes a substrate 2, a first insulating film 3 formed on the substrate 2, and a M 2 formed on the first insulating film 3.
An MR head element 4 serving as a magnetic sensing element of the R head 1;
It comprises a second insulating film 5 formed on the head element 4 and a soft magnetic film 6 formed on the second insulating film 5.

The substrate 2 serves as a lower shield of the MR head 1. The substrate 2 is made of a hard soft magnetic material such as Ni-Zn ferrite or Mn-Zn ferrite. The first insulating film 3 serves as a lower layer gap of the MR head 1, and the second insulating film 5 serves as an upper layer gap of the MR head 1. For the first insulating film 3 and the second insulating film 5, for example, Al ₂ O ₃ is used. Soft magnetic film 6
Are the upper shields of the MR head 1. The soft magnetic film 6 is made of, for example, NiFe.

The MR head element 4 is sandwiched between the substrate 2 and the soft magnetic film 6 via the first insulating film 3 and the second insulating film 5.

FIG. 2 is a plan view showing an example of the configuration of the MR head element 4 used in the MR head 1. As shown in FIGS. 1 and 2, the MR head element 4
A spin-valve MR element (hereinafter, referred to as an SV-type MR element 11) formed on the base film 10 and arranged in a manner that its longitudinal direction is substantially parallel to the surface facing the magnetic recording medium and is substantially rectangular in a plane. .) 11, hard magnetic films 12a and 12b formed on the underlying film 10 at both longitudinal ends of the SV type MR element 11, an extraction electrode film 13a connected to the hard magnetic film 12a, and a hard magnetic film 12a. And a lead electrode film 13b connected to the magnetic film 12b. And this MR head 1
Is a so-called horizontal MR head which is arranged so that the longitudinal direction of the SV type MR element 11 is substantially parallel to the surface facing the magnetic recording medium. In FIG. 2, only the vicinity of the characteristic SV type MR element 11 is enlarged.

The base film 10 is a base of the hard magnetic films 12a and 12b provided at both ends in the longitudinal direction of the SV type MR element 11, and controls the orientation of the hard magnetic films 12a and 12b. For the base film 10, Cr or a Cr alloy is used. By forming the hard magnetic films 12a and 12b on the base film 10 containing Cr, the hard magnetic films 12a and 12b are formed.
12b is oriented in hcp (011) to obtain high Hc and Mr.
/ Ms.

From the viewpoint of controlling the orientation of the hard magnetic films 12a and 12b, the effect is reduced as compared with the case of using Cr. However, in addition to Cr, a metal such as Au or Fe or an alloy thereof is used. Can also. By using Au, Fe, or the like for the base film 10, the yield of the MR head 1 can be improved.

The thickness of the underlayer 10 is preferably 3 nm or more, and more preferably 5 nm or more. As described above, if the thickness of the base film 10 is 3 nm or less, the base film 10 grows in an island shape and does not become a continuous film, so that the orientation of the hard magnetic films 12a and 12b formed on the base film 10 is disturbed. I will. Therefore, by setting the thickness of the base film 10 to 3 nm or more, the base film 10 becomes a continuous film and the hard magnetic film 12
The orientations of a and 12b can be controlled. Further, by setting the thickness of the base film 10 to 5 nm or more, the base film 10
The orientation of the hard magnetic films 12a and 12b formed thereon can be controlled more, and the Hc and Mc of the hard magnetic films 12a and 12b can be controlled.
r / Ms increases, and a stable longitudinal bias effect can be obtained.

The SV type MR element 11 basically has a first
Has a four-layer structure in which a ferromagnetic layer, a nonmagnetic layer, a second ferromagnetic layer, and an antiferromagnetic layer are stacked in this order. The first ferromagnetic layer and the second ferromagnetic layer are separated by a nonmagnetic layer, and an antiferromagnetic layer is provided on the second magnetic layer, so that the second magnetic layer in contact with the antiferromagnetic layer Is magnetized in a certain direction (hereinafter, such a ferromagnetic layer is referred to as a pinned layer).
On the other hand, the magnetization direction of the first magnetic layer separated by the nonmagnetic layer rotates even with a weak external magnetic field (hereinafter, such a ferromagnetic layer is referred to as a free layer).

The SV type MR element 11 having the above configuration
When an external magnetic field is applied to the substrate, the magnetization direction of the free layer is determined according to the intensity of the external magnetic field. When the magnetization direction of the free layer is 180 ° opposite to the magnetization direction of the pinned layer, the SV type MR element 1
The resistance of 1 is maximum. On the other hand, when the magnetization directions of the free layer and the pinned layer are the same, the resistance of the SV type MR element 11 becomes minimum. Therefore, in the above-mentioned MR head element 4, the external magnetic field is detected by utilizing the resistance change of the SV type MR element 11.

As the free layer and the pinned layer, known soft magnetic materials can be used. Specifically, NiFe, Co
Fe, NiFeCo, permalloy NiFe-X (X
Are Ta, Cr, Nb, Rh, Zr, Mo, Al, Au,
There are Pd, Pt, Si and the like. Further, X may contain a plurality of these elements. ) And the like. Further, as the nonmagnetic layer, Cu, CuNi, CuAg, or the like can be used. As the antiferromagnetic layer, IrMn, R
hMn, PtMn, FeMn, CrMnPt, NiO,
NiCoO or the like can be used.

The SV type MR element may be provided with a base layer, a protective layer and the like. For example, Ta or the like is used for these underlayers and protective layers.

Here, the SV type MR element 11 has a side surface 11a serving as a joint with the hard magnetic film 12a and the hard magnetic film 1a.
The side surface 11b serving as a joint with the substrate 2b is formed not obliquely to the substrate 2 but obliquely. Side view 1 of MR element 11
The oblique formation of 1a, 11b increases the bonding area between the hard magnetic films 12a, 12b disposed in these portions, and increases the electrical coupling between the SV type MR element 11 and the hard magnetic films 12a, 12b and the magnetic field. The coupling is improved.

The hard magnetic films 12a and 12b are made of SV type M
The hard magnetic film 1 is provided at both ends in the longitudinal direction of the R element 11.
Since the magnetization distribution of the free layer is stabilized to a single magnetic domain state due to the influence of the longitudinal bias magnetic field from 2a and 12b, the SV
The magnetoresistive characteristics of the type MR element 11 can be made stable without any hysteresis.

Then, as described above, this hard magnetic film 1
2a and 12b are formed on the base film 10, whereby the hard magnetic films 12a and 12b are hcp (011) oriented. The SV type MR element 11 and the hard magnetic film 12
The base film 10 is not disposed at the junction with the hard magnetic films 12a and 12b, and the SV type MR element 11 is in direct contact with the hard magnetic films 12a and 12b. SV type MR element 11 and hard magnetic film 12
a and 12b are directly joined to form the SV type MR element 1
1 and the hard magnetic films 12a and 12b can be enhanced in magnetic coupling. Therefore, in the MR head 1, a longitudinal bias magnetic field can be effectively and stably applied to the SV type MR element 11.

Since the hard magnetic films 12a and 12b have conductivity, in the MR head element 4, sense current flows from the extraction electrode films 13a and 13b via the hard magnetic films 12a and 12b to the SV type. It is supplied to the MR element 11. The portion which becomes the magnetic sensing portion for actually detecting the magnetic field from the magnetic recording medium is the SV type MR element 11 provided between the hard magnetic films 12a and 12b. Accordingly, the interval between the hard magnetic films 12a and 12b is the track width, and the track width is regulated by the hard magnetic films 12a and 12b.

The extraction electrode films 13a and 13b are made of a conductive film, and include the SV type MR element 11 and the hard magnetic film 12a.
This is an electrode for supplying a sense current to 12b. The extraction electrode film 13a is connected to the hard magnetic film 12a, the extraction electrode film 13b is connected to the hard magnetic film 12b, and the hard magnetic film 12 is connected through the extraction electrode films 13a and 13b.
A sense current is supplied to a, 12b and the SV type MR element 11. Further, terminals (not shown) for making electrical connection with the outside are formed on the extraction electrode films 13a and 13b.

When an information signal is read from a magnetic recording medium using such an MR head 1, the extraction electrode film 1 is used.
3a and 13b through the hard magnetic films 12a and 12b
A sense current is supplied to the MR element 11 and a sense current flows in the longitudinal direction of the SV MR element 11. The sense current causes S to be generated by the magnetic field from the magnetic recording medium.
The resistance change of the V-type MR element 11 is detected, and thereby the information signal from the magnetic recording medium is reproduced. And this M
In the R head 1, the hard magnetic films 12a and 12b
Since the free layer of the type MR element 11 has a single magnetic domain,
The occurrence of Barkhausen noise due to the movement of the domain wall can be prevented.

At this time, in the MR head 1, since the hard magnetic films 12a and 12b are formed on the base film 10, the orientation of the hard magnetic films 12a and 12b is enhanced, and the SV type MR element is more effectively used. 11 can be magnetically stabilized. Further, in the MR head 1, since the bonding surface between the SV type MR element 11 and the hard magnetic films 12a and 12b is formed obliquely with respect to the substrate 2, the sense current flows through the hard magnetic films 12a and 12b. As a result, the electrical reliability when supplying to the SV type MR element 11 increases. Further, in the MR head 1, the SV type MR element 11 and the hard magnetic films 12a, 12a
Since the base film 10 is not disposed at the joint portion with b,
The magnetic reliability between the V-type MR element 11 and the hard magnetic films 12a and 12b can be improved.

Next, a method of manufacturing such an MR head 1 will be described.

First, the substrate 2 is prepared, and its surface is subjected to mirror finishing. The substrate 2 is made of a hard soft magnetic material. Next, as shown in FIG. 3, a first insulating film 3 serving as a lower gap is formed on the substrate 2 by sputtering or the like. As a material of the first insulating film 3, for example, Al ₂ O ₃ is used.

Next, as shown in FIG. 4, an MR head element 4 is formed on the first insulating film 3. In order to form the MR head element 4, a base film 10 containing Cr is formed on the entire surface of the first insulating film 3.

At this time, the thickness of the base film 10 is preferably 3 nm or more, more preferably 5 nm or more.
If the thickness of the base film 10 is less than 3 nm, the continuity of the base film 10 cannot be obtained because the Cr crystal grows in an island shape.
By setting the thickness of the base film 10 to 3 nm or more, Cr crystals can be continuously grown, and continuity of the base film 10 can be obtained. By setting the thickness of the base film 10 to 5 nm or more, the surface of the base film 10 can be made flatter.

Next, as shown in FIG. 5, a spin valve film 11c to be the SV type MR element 11 is formed on the base film 10. Specifically, Ta layer / NiFe layer / CoFe layer /
A Cu layer / CoFe layer / RhMn layer / Ta layer are formed in this order.

Next, as shown in FIG. 6, a photoresist is applied on the spin valve film 11c, and a predetermined resist pattern 20 is formed by a photolithography technique. Specifically, a resist pattern having openings in portions that will eventually become the hard magnetic films 12a and 12b and the lead electrode films 13a and 13b is used.

At this time, as shown in FIG. 6, the resist pattern 20 is divided into a lower resist pattern 20a and an upper resist pattern formed on the lower resist pattern 20a and remaining over a wider area than the lower resist pattern 20a. 20b.

The resist pattern 3 having such a two-layer structure
0 is formed, for example, as follows. First, a first resist is applied on the spin valve film 11c. next,
Drawing is performed by irradiating the first resist with an exposure line in a predetermined pattern, and a predetermined pattern latent image is formed in the first resist.

Next, a second resist is applied on the first resist on which the pattern latent image has been formed. Then, drawing is performed by irradiating the second resist with an exposure line in a predetermined pattern, and a predetermined pattern latent image is formed in the second resist.

Next, the second resist having the predetermined pattern latent image formed thereon is developed to form an upper resist pattern 20b. When the second resist is a positive resist in which the solubility of the portion irradiated with the exposure light to the developing solution is increased, the resist of the portion irradiated with the exposure light is dissolved and removed in the developing solution, and the exposed light is removed. The resist in the portion that has not been irradiated remains, and the upper resist pattern 20b is formed.

Next, the lower resist pattern 20a is formed by developing the first resist having the predetermined pattern latent image formed thereon. When the second resist is a positive resist, the portion of the resist irradiated with the exposure light is dissolved in a developing solution and removed, and the resist of the portion not irradiated with the light remains, and the lower resist pattern 20a is left. Is formed. Thus, a resist pattern 20 having a two-layer structure as shown in FIG. 6 is formed.

Next, as shown in FIG. 7, ion beam etching using Ar ions is performed using the resist pattern 20 as a mask, and the spin-valve film 11c and the underlying film 10 are exposed from the mask. Remove the part. At this time, when the etching is performed, the etching is terminated in a state where the underlying film 10 is partially left, instead of removing the entire underlying film 10. The remaining base film 10
Is not particularly limited as long as its surface is flat.

Further, since the resist pattern 20 is formed in two layers, when the MR film is etched using the resist pattern as a mask, the SV type MR element 11
Are formed diagonally with respect to the substrate 2.

Next, as shown in FIG. 8, while the resist pattern 20 is left, the hard magnetic films 12a, 12a
The hard magnetic material film 12 to be b is formed. At this time, the hard magnetic material film 12 is formed on the base film 10 with a part left, but at the junction with the SV type MR element 11, the SV type MR element 11 is not interposed. Directly joined with.

As the hard magnetic material film 12, for example, CoC
r, CoPt, CoCrPt, etc. are used. By forming the hard magnetic material as described above on the underlayer 10 containing Cr, the orientation of the hard magnetic material film 12 is changed to hcp (01).
1) The orientation can be controlled.

Further, as shown in FIG. 8, on the hard magnetic material film 12, a conductive film 13 to be the extraction electrode films 13a and 13b is formed. Then, as shown in FIG. 9, the resist applied on the spin valve film 11c is removed together with the hard magnetic material film 12 and the conductive film 13 formed on the resist. As a result, the hard magnetic films 12a and 12b and the extraction electrode films 13a and
The MR head element 4 is formed in a state of being arranged on both sides of the V-type MR element 11.

As described above, when forming the hard magnetic films 12a and 12b, the base film 10 is formed in advance before forming the spin valve film 11c instead of forming the base film 10. The hard magnetic films 12a and 12b are formed on the base film 10 by forming the hard magnetic films 12a and 12b on the base film 10 with a part remaining during the etching, but the hard magnetic films 12a and 12b are formed. An MR head element 4 having a structure in which the base film 10 is not interposed at the junction between the substrate and the SV type MR element 11 is formed.

Next, a second insulating film 5 serving as an upper layer gap is formed on the MR head element 4 by sputtering or the like. As a material of the second insulating film 5, for example, Al
₂ O ₃ or the like is used. Finally, a soft magnetic film 6 serving as an upper shield is formed. As a material of the soft magnetic film 6, for example, NiFe or the like is used. Through the above steps, the MR head 1 as shown in FIG. 1 is formed.

In the MR head manufactured by the manufacturing method according to the present embodiment as described above, it was confirmed that the hard magnetic film was well oriented to hcp (011).
It is also found that the degree of orientation of hcp (011) of the hard magnetic film does not depend on the thickness of the underlying film left on the substrate, but on the flatness of the surface of the underlying film left after etching. Was.

By increasing the flatness of the underlayer film surface, the orientation of hcp (011) of the hard magnetic bias film is improved, and the SV
The longitudinal bias effect on the type MR film could be improved.
Therefore, it was found that even when the track width was 1 μm, an MR head element free of Barkhausen noise could be obtained, and the yield could be significantly improved.

On the other hand, as a comparative example, an MR head was manufactured by changing the base film thickness by a conventional method. Here, FIG.
FIG. 15 is a diagram schematically showing a conventional manufacturing process of the MR head 30 as shown in FIG.

First, as shown in FIG. 12, a first insulating film 32 serving as a lower gap is formed on a substrate 31 made of a soft magnetic material, and an MR element 33 is formed on the first insulating film 32.
A spin valve film 33a was formed. In particular,
A Ta layer / NiFe layer / CoFe layer / Cu layer / CoFe layer / RhMn layer / Ta layer were formed in this order to form a spin valve film 33a.

Next, as shown in FIG. 13, a photoresist was applied on the spin valve film 33a, and a predetermined resist pattern 40 was formed by a photolithography technique. Specifically, a resist pattern having openings in portions that will eventually become the hard magnetic films 35a and 35b and the extraction electrode film was used. At this time, as shown in FIG. 13, the resist pattern 40 is formed from a lower resist pattern 40a and an upper resist pattern 40b formed on the lower resist pattern 40a and having a wider area than the lower resist pattern 40a. The resulting resist pattern had a two-layer structure.

Next, as shown in FIG. 14, ion beam etching using Ar ions was performed using the resist pattern 40 as a mask to remove a portion of the spin valve film exposed from the mask. At this time, since the resist pattern 40 has a two-layer structure, the side surface of the SV type MR element 33 is formed obliquely with respect to the substrate 31. S
The track width defined by the width of the V-type MR element 33 is 1 μm
And

Next, as shown in FIG. 15, a Cr-containing base film 34 is formed with the resist pattern 40 remaining, and the hard magnetic films 35a, 35a are formed on the base film 34.
A hard magnetic material film 35 to be b was formed. Further, on the hard magnetic material film 35, a conductive film 36 to be the lead electrode films 36a and 36b was formed.

Then, as shown in FIG. 16, the resist applied on the spin valve film 33a is peeled off together with the hard magnetic film 35 and the conductive film 36 formed on the resist, thereby forming the MR element 31. Hard magnetic film 35 on both sides
a, 35b and the extraction electrode films 36a, 36b were formed to form an MR head element 39.

Finally, a second insulating film 37 serving as an upper gap is formed on the MR head element 39, and a soft magnetic film 38 serving as an upper shield is formed on the MR head element 39, as shown in FIG. The head 30 was manufactured.

FIG. 17 shows the relationship between the thickness of the base film of the MR head manufactured by such a conventional manufacturing method and the yield.

FIG. 17 shows that the yield rate is significantly reduced when the thickness of the underlayer is 3 nm or less. This is due to the disorder of the hcp (011) orientation of the hard magnetic bias film due to the fact that the underlying film is not formed as a continuous film but is distributed in an island shape.

FIG. 17 shows that when the underlayer thickness is 3 nm or more, the yield decreases almost in inverse proportion to the underlayer thickness. This is because the underlying film formed at the joint between the SV type MR element and the hard magnetic film is formed by the hard magnetic film and the SV type MR film.
This is probably because the magnetic continuity between the device and the element was weakened, and a sufficient longitudinal bias magnetic field could not be obtained.

Therefore, the MR head has a structure in which no underlying film is disposed between the SV type MR element and the hard magnetic film,
It has been found that the magnetic continuity between the hard magnetic film SV type MR element can be enhanced and a sufficient vertical bias magnetic field can be obtained.

In the above-described embodiment, a so-called horizontal MR head, in which the MR element is arranged so that the longitudinal direction of the MR element is substantially parallel to the surface facing the magnetic recording medium, is taken as an example. Although described, the present invention is not limited to this, the MR element is arranged such that the longitudinal direction of the MR element is substantially perpendicular to the surface facing the magnetic recording medium,
It is also applicable to a so-called vertical MR head.
Further, the magnetoresistive effect type magnetic sensing element of the present invention is not limited to a magnetic head that senses a magnetic field from a magnetic recording medium, but can be widely applied to a magnetic sensor that senses a magnetic field.

Further, in the above-described embodiment, an SV type MR element having a giant magnetoresistance effect has been described as an example of the MR element, but the present invention is not limited to this. The present invention is also applicable to an MR element having a film made of a soft magnetic material having a magnetoresistive effect and a giant magnetoresistive element other than the SV type MR element.

[0073]

According to the present invention, the orientation of the hard magnetic film is controlled by the under film, and the under film is not disposed at the junction between the MR element and the hard magnetic film. Increase the magnetic reliability between the magnetic film and M
The R element can be magnetically stabilized.

Therefore, according to the present invention, an excellent MR head free of Barkhausen noise can be realized even in an MR head narrowed in track for the next-generation high-density recording.

In the present invention, an MR film is formed on a base film,
Since the hard magnetic film is formed on the base film that is partially left when the MR film is etched, an MR head having no base film at the junction between the MR element and the hard magnetic film is used. Obtainable.

Therefore, according to the present invention, a narrow track MR head corresponding to next-generation high-density recording can be manufactured economically and with sufficiently accurate steps without largely changing the conventional manufacturing equipment.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing one configuration example of an MR head of the present invention.

FIG. 2 is a plan view showing a configuration example of an MR head element of the MR head of FIG.

FIG. 3 is a diagram illustrating a method for manufacturing the MR head, and is a cross-sectional view illustrating a state where a first insulating film is formed on a substrate.

FIG. 4 is a diagram for explaining a method of manufacturing the MR head, and is a cross-sectional view showing a state where a base film is formed on a first insulating film.

FIG. 5 is a view for explaining the method of manufacturing the MR head, and is a cross-sectional view showing a state in which a spin valve film is formed on a base film.

FIG. 6 is a diagram illustrating a method for manufacturing the MR head, and is a cross-sectional view illustrating a state where a resist pattern is formed on the spin valve.

FIG. 7 is a diagram for explaining the method of manufacturing the MR head, and is a cross-sectional view showing a state where the spin valve film and a part of the base film are etched using the resist pattern as a mask.

FIG. 8 is a diagram illustrating a method for manufacturing the MR head, and is a cross-sectional view illustrating a state in which a hard magnetic material film and a conductive film are formed with a resist pattern remaining.

FIG. 9 is a view for explaining the method for manufacturing the MR head, and is a cross-sectional view showing a state where the resist pattern is removed.

FIG. 10 is a cross-sectional view showing one configuration example of a conventional MR head.

FIG. 11 is a diagram showing a relationship between a base film thickness and Hc and Mr / Ms of a hard magnetic film.

FIG. 12 is a diagram illustrating a conventional method for manufacturing an MR head, and is a cross-sectional view showing a state where a first insulating film and a spin valve film are formed on a substrate.

FIG. 13 is a view for explaining a method for manufacturing a conventional MR head, and is a cross-sectional view showing a state where a resist pattern is formed on a spin valve.

FIG. 14 is a diagram illustrating a conventional method for manufacturing an MR head, and is a cross-sectional view showing a state where a spin valve film is etched using a resist pattern as a mask.

FIG. 15 is a view for explaining a conventional method for manufacturing an MR head, and is a cross-sectional view showing a state in which a hard magnetic material film and a conductive film are formed with a resist pattern remaining.

FIG. 16 is a view for explaining the conventional method for manufacturing the MR head, and is a cross-sectional view showing a state where the resist pattern has been peeled off.

FIG. 17 shows a relationship between a base film thickness and MR in a conventional MR head.
FIG. 4 is a diagram illustrating a relationship with a head yield rate.

[Explanation of symbols]

1 MR head, 2 substrate, 3 first insulating film,
Reference Signs List 4 MR head element, 5 second insulating film, 6 soft magnetic film, 10 base film, 11 SV type MR element, 12
a, 12b Hard magnetic film, 13a, 13b Leader electrode film

[Procedure amendment]

[Submission date] September 10, 1998 (1998.9.1)
0)

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] 0008

[Correction method] Change

[Correction contents]

As a material of the hard magnetic film, a hexagonal fine structure (h
CoC with cp: hexsagonal closest packing)
r, CoPt, CoCrPt and the like have been proposed. The present inventors have focused on the crystal orientation of these hard magnetic materials and analyzed the relationship with the magnetic properties. Indices for measuring the potential of the hard magnetic material include a coercive force (Hc) and a residual susceptibility (Mr / Ms: a ratio between residual magnetization and saturation magnetization in no magnetic field). In order to obtain high controllable Hc and Mr / Ms with good controllability, it is necessary to form a hard magnetic material on a Cr-containing alloy base film and hcp (011) orient the hard magnetic material. Here, the hcp (011) orientation indicates a state in which the (011) orientation of the hexagonal close-packed structure (hcp) is oriented in the thickness direction of the film.

[Procedure amendment 2]

[Document name to be amended] Statement

[Correction target item name] 0013

[Correction method] Change

[Correction contents]

[0013]

According to the present invention, there is provided a magneto-resistance effect type magnetic sensing element, comprising: a magneto-resistance effect element; a hard magnetic film disposed at both ends of the magneto-resistance effect element; And a base film to be formed. In the magneto-resistance effect type magnetic head, the joining surface between the magneto-resistance effect element and the hard magnetic film is formed obliquely to the surface of the magneto-resistance effect element, and The semiconductor device is characterized in that the hard magnetic film is bonded to the hard magnetic film without interposing the base film.

[Procedure amendment 3]

[Document name to be amended] Statement

[Correction target item name] 0015

[Correction method] Change

[Correction contents]

A magnetoresistive head of the present invention is a magnetoresistive head having a magnetoresistive element, wherein the magnetoresistive element has a magnetoresistive element; A hard magnetic film disposed on both ends of the magnetoresistive element; and a base film serving as a base of the hard magnetic film. In the magneto-resistance effect type magnetic head, the joining surface between the magneto-resistance effect element and the hard magnetic film is formed obliquely to the surface of the magneto-resistance effect element, and The semiconductor device is characterized in that the hard magnetic film is bonded to the hard magnetic film without interposing the base film.

[Procedure amendment 4]

[Document name to be amended] Statement

[Correction target item name] 0058

[Correction method] Change

[Correction contents]

In the MR head manufactured by the manufacturing method according to the present embodiment as described above, it was confirmed that the hard magnetic film was well oriented in hcp (011). It is also found that the degree of orientation of hcp (011) of the hard magnetic film does not depend on the thickness of the underlying film left on the substrate, but on the flatness of the surface of the underlying film left after etching. Was.

[Procedure amendment 5]

[Document name to be amended] Statement

[Correction target item name] 0065

[Correction method] Change

[Correction contents]

Then, as shown in FIG. 16, the resist applied on the spin valve film 33a is peeled off together with the hard magnetic film 35 and the conductive film 36 formed on the resist to form the MR element 33. Hard magnetic film 35 on both sides
a, 35b and the extraction electrode films 36a, 36b were formed to form an MR head element 39.

[Procedure amendment 6]

[Document name to be amended] Drawing

[Correction target item name] Fig. 1

[Correction method] Change

[Correction contents]

FIG.

Claims (16)

[Claims] A magnetoresistive element, a hard magnetic film disposed at both ends of the magnetoresistive effect element, and a base film serving as a base of the hard magnetic film. The bonding surface with the magnetic film is formed obliquely with respect to the surface of the magnetoresistive element, and the magnetoresistive element and the hard magnetic film are bonded without the base film. Characteristic magneto-resistance effect type magnetic sensing element. 2. The magneto-resistance effect element is a spin valve element having at least a first ferromagnetic layer, a non-magnetic layer, a second ferromagnetic layer, and an antiferromagnetic layer laminated. The magneto-resistance effect type magnetic sensing element according to claim 1, wherein: 3. The magneto-resistance effect type magneto-sensitive element according to claim 1, wherein the underlayer contains Cr. 4. A magnetoresistive effect type magnetic sensing element according to claim 1, wherein said underlayer has a thickness of 3 nm or more. 5. A magnetoresistive head having a magnetoresistive element, wherein the magnetoresistive element is disposed at both ends of the magnetoresistive element and the magnetoresistive element. A hard magnetic film, and a base film serving as a base of the hard magnetic film, wherein a joining surface between the magnetoresistive element and the hard magnetic film is formed obliquely to a surface of the magnetoresistive element. And a magneto-resistance effect type magnetic head, wherein the magneto-resistance effect element and the hard magnetic film are joined without interposing the base film. 6. The magnetoresistive element is a spin valve element comprising at least a first ferromagnetic layer, a nonmagnetic layer, a second ferromagnetic layer, and an antiferromagnetic layer laminated. 6. A magnetoresistive head according to claim 5, wherein: 7. The magnetoresistive head according to claim 5, wherein the underlayer contains Cr. 8. The magnetoresistive head according to claim 5, wherein the underlayer has a thickness of 3 nm or more. 9. A method of manufacturing a magneto-resistance effect type magnetic sensing element having a magneto-resistance effect type magnetic sensing element, comprising: a base film forming step of forming a base film on a substrate; A magnetoresistive film forming step of forming a magnetoresistive film serving as the magnetoresistive element on the formed base film, and a magnetoresistive film formed in the magnetoresistive film forming step A patterning step of applying a photoresist on top and patterning into a predetermined shape; and removing a part of the magnetoresistive film and the base film exposed from the photoresist patterned in the patterning step by etching. An etching step of forming the magnetoresistive element and forming a side surface of the magnetoresistive element at an angle to the substrate; and forming at least the etching step. A hard magnetic film forming step of forming a hard magnetic film on both ends of the magnetoresistive element, the hard magnetic film being partially removed in the etching step. A method for manufacturing a resistance effect type magnetic sensing element. 10. The method of manufacturing a magnetoresistive magneto-sensitive element according to claim 9, wherein in the underlayer film forming step, the underlayer contains Cr. 11. The method of manufacturing a magnetoresistive effect type magnetic sensing element according to claim 9, wherein in said underlayer film forming step, said underlayer film is formed to a thickness of 3 nm or more. 12. In the step of forming a magnetoresistive film, the magnetoresistive film includes at least a first ferromagnetic layer, a nonmagnetic layer, a second ferromagnetic layer, and an antiferromagnetic layer. 10. The method according to claim 9, wherein the magnetoresistive element is a spin valve film formed by lamination. 13. A method of manufacturing a magnetoresistive magnetic head having a magnetoresistive magnetosensitive element, comprising: a base film forming step of forming a base film on a substrate; and a base film forming step. A magnetoresistive film forming step of forming a magnetoresistive film serving as the magnetoresistive element on the formed base film, and a magnetoresistive film formed in the magnetoresistive film forming step. Applying a photoresist to the photoresist and patterning the photoresist into a predetermined shape; and etching and removing a part of the magnetoresistive film and the underlayer exposed from the photoresist patterned in the patterning step. An etching step of forming a magnetoresistive element and forming a side surface of the magnetoresistive element at an angle to the substrate; and forming at least the etching step. And a hard magnetic film forming step of forming a hard magnetic film on the base film, a part of which is removed in the etching step, at both ends of the magnetoresistive effect element. A method for manufacturing a magnetoresistive head. 14. The method according to claim 13, wherein in the step of forming the underlayer film, the underlayer film contains Cr.
A manufacturing method of the magnetoresistive effect type magnetic head described in the above. 15. The method of manufacturing a magnetoresistive head according to claim 13, wherein in the underlayer film forming step, the underlayer is formed to a thickness of 3 nm or more. 16. In the step of forming a magnetoresistive film, the magnetoresistive film includes at least a first ferromagnetic layer, a nonmagnetic layer, a second ferromagnetic layer, and an antiferromagnetic layer. 14. The method for manufacturing a magnetoresistive head according to claim 13, wherein the spin valve film is a laminated spin valve film.