JP2000052079A - Laser light radiation method and manufacturing method of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve evenness of annealing due to radiation of a laser light. SOLUTION: According to a device for radiating a laser light having such a beam shape as a linear shape or a square shape against a face to be radiated, a homogenizer has a principle that an original beam discharged from a laser device is passed through two cylindrical lenses 4 and 5, so that the bias of the light strength distribution of the original beam is dispersed. In this case, the directions of both the cylindrical lenses 4 and 5 are not parallel to the moving direction of the beam.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

TECHNICAL FIELD [0001] The invention disclosed in the present specification is:
The present invention relates to an apparatus for performing an annealing process and an exposure process by laser light irradiation. For example, the present invention relates to a laser annealing apparatus that irradiates a large-area beam so as to obtain a uniform irradiation effect. Such a laser annealing apparatus is used in a semiconductor manufacturing process.

[0002]

2. Description of the Related Art Conventionally, a crystallization technique by irradiating an amorphous silicon film with a laser beam has been known. Also,
2. Description of the Related Art A technique of irradiating a laser beam for recovering crystallinity of a silicon film damaged by implantation of impurity ions and activating the implanted impurity ions is known. These are called laser annealing techniques.

A typical example of the latter technique is annealing of the source and drain regions of a thin film transistor. In this method, after implantation of impurity ions typified by phosphorus or boron into the region, annealing of the region is performed by laser light irradiation.

[0004] Such a process using laser light irradiation has a feature that there is almost no thermal damage to the substrate. The feature that there is no problem of thermal damage to the substrate is advantageous in reducing a restriction on a material to be processed and forming a semiconductor element on a substrate having low heat resistance, such as glass. In particular, it is important when manufacturing an active matrix type liquid crystal display device whose use range is expanding in recent years.

In an active matrix type liquid crystal display device, it is desired to use a glass substrate as a substrate in view of cost and a demand for a large area. The glass substrate cannot withstand heat treatment at a high temperature of 600 ° C. or higher or 700 ° C. or higher. As a technique for avoiding this problem, a technique in which the above-described crystallization of the silicon film or annealing after the impurity ions is performed by laser light irradiation is effective.

In the method using laser light irradiation,
Even when a glass substrate is used as the substrate, there is almost no thermal damage to the glass substrate. Therefore, a thin film transistor using a crystalline silicon film can be manufactured even when a glass substrate is used.

However, in general, a laser beam is generated from a laser device (hereinafter referred to as an original beam).
In this case, since the beam area is small, a method of processing a large area by scanning with a laser beam is generally used. In this case, the in-plane uniformity of the processing effect is low, and the processing takes time. Etc. In particular, since a general original beam has a non-uniform light intensity distribution, if it is used as it is, there is a significant problem in terms of uniformity of the processing effect.

Therefore, a technique has been proposed in which the original beam is processed to make the beam as uniform as possible, and the size of the beam is changed according to the shape of the processing area.
The shape of the beam is generally rectangular or linear.
By doing so, uniform laser annealing can be performed over a large area.

FIG. 1 shows an example of a laser irradiation apparatus for processing an original beam. In FIG. 1, reference numeral 1 denotes a laser oscillator. As the laser oscillator 1, for example, an excimer laser or the like is used. This oscillates laser light by decomposing a predetermined gas by high-frequency discharge and creating an excited state called an excimer state.

For example, a KrF excimer laser obtains an excited state of KrF ^* by high-pressure discharge using Kr and F as source gases. This excited state has a lifetime of several nsec.
Although it is not as stable as several μsec, the ground state, KrF, is still more unstable, and there is an inverted distribution in which the density of the excited state is higher than that of the ground state. This results in stimulated radiation,
A relatively high efficiency laser beam can be obtained.

Of course, the laser oscillator 1 is not limited to an excimer laser, but may be another pulse laser or a continuous laser. Generally, a pulse laser is suitable for the purpose of obtaining a high energy density.

The original beam emitted from the laser oscillator 1 is processed into an appropriate size by the concave lens 2 and the convex lens 3. FIG. 1 shows an example in which the original beam is expanded in the vertical direction. Even at this stage, the light intensity of the beam is
Since it keeps the state radiated from the laser oscillator,
It is called the original beam.

The original beam then enters an optical device called a homogenizer. This is at least two lens devices having a large number of cylindrical lenses (referred to as a multi-cylindrical lens or a reticular lens).
4 and 5. Generally, as shown in the inset of FIG.
The multi-cylindrical lenses 4 and 5 are arranged so as to be orthogonal to each other.

The number of multi-cylindrical lenses may be one or three or more. With one multi-cylindrical lens, the non-uniformity in one direction of the original beam is dispersed. When two or more multi-cylindrical lenses are formed in the same direction, the same effect as increasing the number of cylindrical lenses can be obtained.

By passing through the homogenizer, the original beam can obtain a highly uniform beam with dispersed energy density. This principle and problems will be described later. Thereafter, the beam is processed into a target shape by various lenses 6, 7, 9 or the direction is changed by a mirror 8, and the beam is irradiated on a sample. (Fig. 1)

[0016]

Next, the principle and problems of the homogenizer will be described. This is the problem to be solved by the present invention. In the following, in order to avoid complexity, optical considerations on one surface will be made. The laser beam (original beam) transmitted through the multi-cylindrical lens is as shown in FIG.

Here, there are three cylindrical lenses, and light incident on each of the cylindrical lenses is refracted by each of the cylindrical lenses. The focal point F ₁ ~F
After converging at ₃ , the beam diverges. At this time, a portion (mixing region) where all the lights transmitted through the cylindrical lenses are mixed is obtained.

By the way, it is assumed that the distribution of the light intensity is unbalanced in the original beam, and the light incident on each cylindrical lens has a different intensity. However, in the mixed area,
Since the lights transmitted through the respective cylindrical lenses are mixed, the bias is dispersed. That is, the light intensity is made uniform. In this way, a beam with a small light intensity distribution can be obtained. (Fig. 2 (A))

When attention is paid to the optical path transmitted through the multi-cylindrical lens, this is light emitted from point light sources F _{1 to} F ₃ arranged at equal intervals. Moreover, the original beam since coherent light, focus, i.e., the light emitted from the point light source F ₁ to F ₃ is also the light having a uniform phase. Such light interferes. That is, depending on the distance x between the irradiation surface and the point light source and the distance 2a between the point light sources, a portion where the light cancels (node) and a portion where the light reinforces (antinode) are generated. (Figure 2
(B))

This means that, contrary to what was intended, the multi-cylindrical lens causes a new non-uniform light intensity. When the number of point light sources is a small number such as two or three, a part where a belly or a node can be formed can be strictly obtained. However, the number of cylindrical lenses in a normal homogenizer is five or more, typically one.
0 to 30, and it is complicated to consider all the interferences of a large number of point light sources. .

When there are two point light sources, the antinode portion is a portion that is equidistant from the point light source regardless of the distance x. This is shown in FIG. That is, when there are point light sources F ₁ and F ₋₁ , at a point A on the irradiated surface, F ₁ A =
F ₋₁ A. In such a point A, regardless of the values of the interval 2a and the distance x of the point light source, the point light source F ₁
Since the light coming from the light source and the light coming from the point light source F- ₁ have the same phase, they reinforce each other.

Next, it is assumed that another point light source F- ₂ is present, and that the light coming from the point light source F- ₂ has the same phase as the light coming from the other point light sources, and a condition for strengthening is considered. this is,
Although depending on a and x, this is the case where the optical path difference F- _2A -F _- 1A is an integral multiple nλ of the wavelength. That is, F ₋₁ A−F ₋₂ A = nλ.

Normally, since a << x, from a simple calculation, F _-1 AF _-2 A = 4a ² / x = nλ. Against dotted line passing through the point A, it is also the same discussed with respect to the light source F ₂ points in the point light source F _-2 symmetrical positions.

Next, besides, point light sources F ₂ , F ₃ ,
F ₄ , F _-3 . . . Consider the case where exists. At this time,
Optical path difference F ₃ A-F ₂ A and F ₄ A-F ₃ A, _{respectively, F 3 A-F 2 A} = 2 (4a 2 / x) = 2nλ, F 4 A-F 3 A = 3 (4a ² / x) = 3nλ. (FIG. 3 (C))

More generally, as shown in FIG.
Thus, the m-th point light source F from the point A _mAnd the (m + 1) th
Eye point light source F_{m + 1}At the optical path difference F_{m + 1}AF_mA
Is F_{m + 1}AF_mA = 4ma^Two/ X and 4a^Two/ X = nλ, so that F_{m + 1}AF_mA = 4ma^Two/ X = mnλ,

That is, if the light from the point light source F ₂ has the same phase as that of the light from the point light source F ₁ , the point light sources F ₃ , F ₄ ,. . .
F _m , F _{m + 1,.} . . Light from all the point light sources also reinforces each other at the same phase. The intensity of light from a point light source is inversely proportional to its distance, but in the above discussion, since a << x, the distance between each point light source and point A is approximately the same, One can conclude that point sources are almost equally constructive. Assuming that the intensity of light from each point light source is i, the intensity I of light at point A is I = Ni, where N is the number of point light sources.

Next, let us consider a case where the light from the point light source F- ₂ cancels the light from the point light source F- _{1 at the} point A. This is realized when the optical path difference is an odd multiple of half a wavelength. That is, F ₋₁ A−F ₋₂ A = 4a ² / x = (n + ／) λ. (FIG. 4 (A))

In this case, the light from the point light sources F ₁ and F ₋₁ is canceled by the light of the opposite phase from the point F _−2, and the light intensity I at the point A is I = 2i−i = i. is there. Furthermore, as shown in FIG. 4 (B), when the light source F ₂ another point exists, since an opposite phase to the light from the light also point light source F ₁ from the point source, at point A The light intensity becomes 0. (FIG. 4 (B))

Next, the point light source F_Three, F_Fourthink about
And the optical path difference F_ThreeAF_TwoA and F_FourAF_ThreeA is
Each F_ThreeAF_TwoA = 2 (4a^Two/ X) = (2n + 1) λ, F_FourAF_ThreeA = 3 (4a^Two/ X) = (3n + 1 + 1 /
2) λ, That is, the point light source F_ThreeThe light from is F_TwoLight from
In phase (ie, F ₁Out of phase with the light from
Also, a point light source F_FourThe light from is F_ThreeOut of phase with light from
That is, F₁In phase with the light from (FIG. 4
(C))

More generally, the m-th point light source from point A
F_mAnd the (m + 1) th point light source F _{m + 1}At the light path
Difference F_{m + 1}AF_mA is F_{m + 1}AF_mA = 4ma^Two/ X = m (n + 1/2)
λ, Here, the point light source F_mF of light from₁To the light from
Consider the phase for this.

F ₂ A−F ₁ A = (n + ／) λ F ₃ A−F ₂ A = (2n + 1) λ, F ₄ A−F ₃ A = (3n + 3/2) λ,. . . . . . . . . . . . F _m A−F _m−1 A = (m−1) (n + ／) λ,

Taking the sum of the above equations, (left side) = F _m −F ₁ , (right side) = [m (m−1)] (n + ／) λ ÷ 2.

M = 4, 5, 8, 9,. . . , 4k, 4k
+1,. . . , The optical path difference F _m-F₁Is F_m-F₁= K (4k-1) (2n + 1) λ (m
= 4k) or F_m-F₁= 4k^Two(4n + 2) λ (m
= 4k + 1) and the point light source F_mThe light from is F₁In phase with the light from
Become. In other cases, the phases are opposite to each other.

Although complicated, the light intensity I at the point A fluctuates between 0 and 2i. In any case, this is sufficiently lower than the light intensity in the case of FIG.

A similar example is the case in which each point light source hangs on the surface to be illuminated.
It can also be seen at the foot of the line, point B. Point B is the irradiated surface
At a point light source F₀Is the closest point to Point light
Source F ₀Another point light source F on both sides of₁, F_-1Think there is
Then, of course, F₁B = F_-1B, regardless of a, x, and λ, the point B
Light source F₁From the light and F_-1Light from each other strengthens. If F
₁BF₀If B = nλ, at point B, a point light source
F₀The light from F is₁Is in phase with the light from
Is represented by I = 3i.

At this time, 2a ² / x = nλ.
(FIG. 5A) On the other hand, if F ₁ B−F ₀ B = (n + ／) λ, then
At point B, the light from point light source F _{0 is} out of phase with the light from F ₁ , so the light cancels out and the light intensity at point B is I
= I. At this time, 2a ² / x = (n + 1 /
2) λ. (FIG. 5 (A)) (FIG. 6 (A))

Next, another point light source, F ₂ , F _-2 , F ₃ , F
_-3,. . . Consider the case where there is. In the condition of FIG. 5 (A), an _{F 2 B-F 1 B =} 3 (2a 2 / x) = 3nλ F 3 B-F 2 B = 5 (2a 2 / x) = 5nλ. (FIG. 5 (B))

More generally, as shown in FIG. 7B, the m-th point light source F _m from the point light source F ₀ and (m +
1) At the point light source F _{m + 1} , the optical path difference F _{m + 1} BF
_m B is: F _{m + 1} B−F _m B = 2 (2m + 1) a ² / x = (2m +
1) nλ,

That is, if the light from the point light source F ₁ has the same phase as the light from the point light source F ₀ , the point light sources F ₂ , F ₃ ,. . .
F _m , F _{m + 1,.} . . Light from all the point light sources (ie, all point light sources) also reinforce each other in the same phase, and the light intensity I at the point B is I = Ni, where N is the number of point light sources.

On the other hand, under the conditions of FIG._TwoBF₁B = (3n + 1 + 1/2) λ, F_ThreeBF_TwoB = (5n + 2 + 1/2) λ. That is, the point light source F_TwoThe light from is F₁Light from
And out of phase (ie, F ₁In phase with the light from
Also, a point light source F_ThreeThe light from is F_TwoOut of phase with light from
That is, F₁Phase opposite to the light from (FIG. 6
(B))

More generally, F ₁ B−F ₀ B = (n + ／) λ F ₂ B−F ₁ B = 3 (n + ／) λ, F ₃ B−F ₂ B = 5 (n + 1) / 2) λ,. . . . . . . . . . . . _{F m B-F m-1} B = (2m + 1) (n + 1/2) λ, a, taking the sum of the above formula, (left side) = F _m -F _0, (right side) = [m (m + 2) ] (N + ／) λ.

[0042] That is, when m is an even number of (2k), the optical path difference F _m -F ₀ is _{F m -F 0 = 2k (k} + 1) (2n + 1) λ, the light from the point light source F _m F _{It has the} same phase as the light from ₀ . In other cases, the phases are opposite to each other.

Although thus complicated, the light intensity I at the point B fluctuates between 0 and 2i. In any case, this is sufficiently lower than the light intensity in the case of FIG.
In the above example, the interference conditions at the unique points A and B from a plurality of point light sources were obtained. The points corresponding to points A and B are
There are as many as the number of point light sources (the number of cylindrical lenses). Then, depending on a, x, and λ, the light intensity at the points A and B is extremely strong or approaches zero.

For example, a = 1 mm, x ≒ 1 m = 10 ³ m
If m and λ = 0.25 μm = 0.25 × 10 ⁻³ mm, the light intensity at point A is the case of FIG. 3 (strengthening) at x = 970 mm, and FIG. 4 (cancellation) at x = 985 mm. 3, the interference condition changes abruptly every time the distance from the cylindrical lens to the irradiated surface changes by 15 mm as in the case of FIG.

At point B, half the period (7.5)
mm). The conditions of FIG. 5, 2a ² /
Satisfying x = nλ also satisfies the condition of FIG. 3 at the same time, and both point A and point B become antinodes. But the converse is not true.

Further, the condition of FIG. 6, 2a ² / x = (n +
(1/2) λ is also equivalent to satisfying the condition of FIG. 3. In this case, the point A is an antinode and the point B is a node. Again, the converse is not true.

As described above, the points A and B become nodes or bellies. Now, the appropriate conditions are met,
Assume that a belly appears on the irradiated surface. When the cylindrical lenses are orthogonal as shown in FIG. 1, the portions where the antinodes intersect each other are strengthened, and as shown in FIG. 8 (A), the regular point-like antinodes (the portions with high light intensity) are formed. appear. (FIG. 8
(A)) Depending on the conditions, the spread of the point-like antinode changes, and in some cases, part or all of the point-like antinode may become a point-like node.

When the beam is shaped into a line, that is, when the beam is compressed (reduced) in the moving direction (scanning direction) of the beam and enlarged in the direction perpendicular to the moving direction, the result is as shown in FIG.
The light intensity at the belly becomes stronger than necessary. Conversely, the light intensity approaches zero at the node. In any case, such a portion causes a defect in the annealing process. In particular, if the light intensity changes rapidly, this is a serious problem.
(FIG. 8 (B))

When laser annealing is performed using such a beam, two problems occur. First
Is non-uniformity due to overlapping beam spots. This is caused by irradiating a laser beam while moving the beam and irradiating a part of the first beam (beam spot 1 in FIG. 8C) with the next beam (beam spot 2). As a practical matter, it is impossible to irradiate without overlapping beams. However, the effects can be sufficiently reduced by optimizing the energy density and the number of irradiation pulses.

On the other hand, the problem of beam non-uniformity due to interference caused by the above principle is more serious. As shown in FIG. 8C, a defect caused by beam non-uniformity due to interference occurs in one beam spot in a spot shape. Moreover, the defect 1 formed in the beam spot 1 and the defect 2 formed in the beam spot 2
Are lined up in a line. This is because the moving direction of the beam and at least one direction of the multi-cylindrical lens are parallel. In a linear beam, the lengthwise direction of the beam is perpendicular to at least one direction of the multi-cylindrical lens. (FIG. 8
(C))

Here, the direction of the multi-cylindrical lens is a direction of a straight line formed at the focal point of the incident light. That is, the direction of the multi-cylindrical lens in FIG. 2 is a direction perpendicular to the paper surface. Further, the moving direction of the beam is not a mere spatial moving direction but a higher concept. This is because, in a normal laser annealing apparatus, the optical path may be changed several times by the mirror from the homogenizer to the laser irradiation surface.

Thus, when the substrate is processed by the conventional laser annealing apparatus, as shown in FIG. 8D, a defect perpendicular to the beam moving direction and a defect parallel to the beam moving direction are generated. The former is a linear defect due to overlapping beams, and the latter is a defect due to uneven intensity due to interference. (FIG. 8 (D))

Such a defect extending in the vertical and horizontal directions is particularly fatal in a matrix element (for example, an active matrix circuit or a memory circuit). Because
This is because defects occur over one row and become conspicuous. This is a particularly serious defect when the drive circuit is also provided on the substrate.

[0054]

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems. A first aspect of the present invention is characterized in that the moving direction of the beam is not parallel to any of the multiple cylindrical lens directions. A second feature of the present invention is that, in a linear beam, the long direction of the beam is not perpendicular to the direction of any of the multi-cylindrical lenses.

[0055]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The concept of the present invention will be described with reference to FIG. For example, consider a homogenizer having two multi-cylindrical lenses 4, 5 as shown in FIG. Conventionally, the direction of the multi-cylindrical lens 4 is shown in FIG.
As shown in (B), it is perpendicular to the moving direction of the beam. On the other hand, the direction of the multi-cylindrical lens 5 is parallel to the moving direction of the beam. (The double arrow indicates the direction of the multi-cylindrical lens.) (FIG. 9B)

Problems brought about by such a configuration are as described above. On the other hand, in the present invention, for example, even if the multi-cylindrical lens 4 is arranged in the same direction as the conventional one, the multi-cylindrical lens 5 is
The beam is tilted so that it is not parallel to the moving direction of the beam.
This satisfies the requirement of the present invention that the direction of any of the multi-cylindrical lenses is not parallel to the beam movement direction. (FIG. 9A)

In the homogenizer having such a configuration, point-like defects (defect 1 and defect 2) caused by non-uniformity due to interference appear obliquely with respect to the moving direction of the beam as shown in FIG. 9C. . Since the defects 1 and 2 generally do not need to be formed on the same straight line, the result is not a linear defect. (FIG. 9 (C))

It should be noted here that, in special cases, the defect 1 and the defect 2 are formed on a straight line.
When a straight line on which a point-like defect appears is drawn as shown in FIG. 9D, the distance d between the upper end of the straight line and the lower end of any other straight line is 0. In that case, the point-like defects are arranged diagonally. (FIG. 9 (D))

This is not only between adjacent straight lines,
There is a problem between other straight lines, for example, FIG.
Even in the case of (E), it is necessary to avoid that d becomes 0. (FIG. 9 (E)) However, in the case of a matrix, in particular, a point defect on a diagonal straight line is not parallel to the arrangement direction of the matrix, so that there are few cases where a clear linear defect occurs.

The above discussion is completely the same even if "the moving direction of the beam" is read as "the direction (or the short direction) perpendicular to the long direction (in the case of a linear beam)". The multi-cylindrical lens 4 does not need to be perpendicular to the beam movement direction, and may be any condition that is not parallel to the beam movement direction. That is, similarly to the conventional homogenizer, in a homogenizer having two multi-cylindrical lenses orthogonal to each other, the configuration of the present invention can also be achieved by shifting the angle with respect to the optical axis of the laser, thereby obtaining the effects of the present invention. Can be.

[0061]

[Embodiment 1] An optical system of this embodiment will be described. The basic configuration of the laser irradiation apparatus of this embodiment is the same as that of FIG. 1, except that the angle of the multi-cylindrical lens in the homogenizer with respect to the optical axis is changed. The shape of the original beam before entering the homogenizer is 6 cm × 5 cm. Hereinafter, the homogenizer will be particularly described.

In the configuration shown in this embodiment, the multi-cylindrical lens 5 is composed of 12 cylindrical lenses (5 mm in width), and divides the incident laser light into approximately 10 parts. In this embodiment, the length of the linear laser beam finally irradiated is 12c in the longitudinal direction.
m. The direction of the multi-cylindrical lens 5 is
The angle is set to 45 ° with respect to the moving direction of the beam. On the other hand, the direction of the multi-cylindrical lens 4 is parallel to the moving direction of the beam. (See FIG. 9A)

Thereafter, the beam from the homogenizer is directed by the optical system so that the direction parallel to the moving direction of the beam is 0.2 mm.
cm, that is, 1/25, and the direction perpendicular to the beam movement direction is expanded by 12 cm, that is, double. That is, a linear beam is obtained.

[Embodiment 2] FIG. 10 shows a schematic configuration of this embodiment.

In this embodiment, a rectangular laser beam 801 output from a laser oscillator (not shown) is applied to an irradiation surface via multi-cylindrical lenses 802 and 803, cylindrical lenses 804 and 805, mirror 806, and cylindrical lens 807. Irradiate as linear laser light.

The configuration shown in FIG. 10 is characterized in that two multi-cylindrical lenses 802 and 803 are arranged at an angle of 45 ° with respect to the scanning direction of the beam and the longitudinal direction (longitudinal direction) of the beam. It is characterized by the following.

Here, an example in which two multi-cylindrical lenses are arranged is shown, but a structure in which more multi-cylindrical lenses are arranged may be adopted.

[0068]

By using the invention disclosed in this specification, it is possible to provide a technique capable of performing uniform annealing over a large area in a laser process used for manufacturing a semiconductor device or the like. .

[Brief description of the drawings]

FIG. 1 is a view schematically showing an optical system of a laser irradiation apparatus.

FIG. 2 is a schematic diagram showing an optical path and interference of a multi-cylindrical lens.

FIG. 3 is a diagram showing interference conditions caused by coherent light from a plurality of point light sources.

FIG. 4 is a diagram showing interference conditions caused by coherent light from a plurality of point light sources.

FIG. 5 is a diagram showing interference conditions caused by coherent light from a plurality of point light sources.

FIG. 6 is a diagram showing interference conditions caused by coherent light from a plurality of point light sources.

FIG. 7 is a diagram showing a calculation formula and the like of optical path differences from a plurality of point light sources.

FIG. 8 is a view showing factors and circumstances of a conventional defect generation by a beam.

FIG. 9 is a diagram showing the configuration of the present invention and a conventional multi-cylindrical lens, the state of defects, and the like.

FIG. 10 is a diagram schematically illustrating an optical system of a laser irradiation apparatus.

[Description of Signs] 1 Laser oscillator 2 Lens 3 Lens 4 Multi-cylindrical lens 5 Multi-cylindrical lens 6 Lens 7 Lens 8 Mirror 9 Lens

Claims (15)

[Claims] 1. A method for irradiating a linear or rectangular laser light, wherein the laser irradiating device for generating the linear or rectangular laser light has a homogenizer including at least one multi-cylindrical lens, The method of irradiating a laser beam, wherein the cylindrical lens comprises a plurality of cylindrical lenses, and a direction of the multi-cylindrical lens is not parallel to a moving direction of the laser beam. 2. A method for irradiating a linear or rectangular laser light, wherein the laser irradiating device for generating the linear or rectangular laser light has a homogenizer including at least one multi-cylindrical lens, The method of irradiating laser light, wherein the multi-cylindrical lens comprises a plurality of cylindrical lenses, and a direction of the multi-cylindrical lens is not perpendicular to a longitudinal direction of the laser light. 3. A method according to claim 1, wherein the direction of the multi-cylindrical lens is a linear direction formed at a focal point of the laser light incident on the multi-cylindrical lens. 4. The laser beam irradiation method according to claim 1, wherein the homogenizer has at least two multi-cylindrical lenses, and the two multi-cylindrical lenses are arranged orthogonal to each other. . 5. The homogenizer according to claim 1, wherein the homogenizer has at least two multi-cylindrical lenses, and one of the two multi-cylindrical lenses forms an angle of 45 ° with the other. Laser light irradiation method. 6. A method for manufacturing a semiconductor device, comprising: a step of generating a linear or square laser beam with a laser irradiation device; and a step of annealing while moving the laser beam. A laser irradiation device that generates a laser beam having a shape has a homogenizer including at least one multi-cylindrical lens, wherein the multi-cylindrical lens includes a plurality of cylindrical lenses, and a direction of the multi-cylindrical lens is a moving direction of the laser light. A method for manufacturing a semiconductor device, which is not parallel to the semiconductor device. 7. A method for manufacturing a semiconductor device, comprising: a step of generating a linear or square laser beam with a laser irradiation device; and a step of irradiating a semiconductor film with the laser beam while moving the laser beam to crystallize the semiconductor device. The laser irradiation device that generates the linear or rectangular laser light has a homogenizer including at least one multi-cylindrical lens, the multi-cylindrical lens includes a plurality of cylindrical lenses, and a direction of the multi-cylindrical lens. Is not parallel to the direction of movement of the laser light. 8. A method for manufacturing a semiconductor device, comprising: a step of generating a linear or square laser beam with a laser irradiation device; and a step of annealing while moving the laser beam. A laser irradiation device that generates a laser beam having a shape has a homogenizer including at least one multi-cylindrical lens, wherein the multi-cylindrical lens is composed of a plurality of cylindrical lenses, and a direction of the multi-cylindrical lens is a longitudinal direction of the laser light. A method for manufacturing a semiconductor device, which is not perpendicular to the semiconductor device. 9. A method for manufacturing a semiconductor device, comprising: a step of generating linear or rectangular laser light with a laser irradiation apparatus; and a step of irradiating a semiconductor film with the laser light while moving to crystallize the semiconductor film. The laser irradiation device that generates the linear or rectangular laser light has a homogenizer including at least one multi-cylindrical lens, the multi-cylindrical lens includes a plurality of cylindrical lenses, and a direction of the multi-cylindrical lens. Is not perpendicular to the longitudinal direction of the laser beam. 10. The method according to claim 6, wherein
A method of manufacturing a semiconductor device, wherein a direction of the multi-cylindrical lens is a linear direction formed at a focal point of laser light incident on the multi-cylindrical lens. 11. The method according to claim 6, wherein
The method of manufacturing a semiconductor device, wherein the homogenizer has at least two multi-cylindrical lenses, and the two multi-cylindrical lenses are arranged orthogonal to each other. 12. The method according to claim 6, wherein
The method of manufacturing a semiconductor device, wherein the homogenizer has at least two multi-cylindrical lenses, and one of the two multi-cylindrical lenses forms an angle of 45 ° with the other. 13. The method according to claim 6, wherein
The method for manufacturing a semiconductor device, wherein the semiconductor device is a thin film transistor. 14. The method according to claim 6, wherein
The method for manufacturing a semiconductor device, wherein the semiconductor device is an active matrix display device. 15. The method according to claim 6, wherein
A method for manufacturing a semiconductor device, wherein the semiconductor device is an active matrix liquid crystal display device.