JP2000049390A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To form a thermoelectric power generation element which outputs a practical voltage, even at a low temperature difference by a method, wherein a heating means and a heat dissipating means are installed respectively at both ends of a semiconductor pair formed on a semiconductor chip. SOLUTION: A P-type semiconductor 5 and an N-type semiconductor 7 are formed on an intrinsic semiconductor chip 8 by a diffusion operation or the like. A semiconductor pair which is connected in series by an aluminum evaporated interconnection or the like is constituted. A heat conduction band A 3 and a heat conduction band B 9 heat or absorb heat at both ends of the semiconductor pair. In addition, heat is conducted to the outside of a package 6 by a heat conduction metal A 1 and a heat conduction metal B 12 by using a bonding wire 2. For example, when the heat conduction metal A 1 is kept at a high temperature and the heat conduction metal B 12 is kept at a low temperature, the heat conduction band A 3 is set to the side of high temperature, and the heat conduction band B 9 is set to the side of the low temperature by heat conduction. A temperature difference is generated between both ends of the semiconductor pair. Consequently, when the heat conduction metal B 12 is added between an electrode A 11 and an electrode B 13, a DC voltage is generated, and it is possible to form a thermoelectric power generation element which can generate electric power, even with small temperature difference.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention provides a thermoelectric power generation element which outputs a practical voltage even at a low temperature difference by applying a semiconductor integrated circuit technology.

[0002]

2. Description of the Related Art As shown in, for example, "Electronic Physical Properties (Introduction to Materials Science IV)" issued by Iwanami Shoten, power can be generated by heating one end of a semiconductor pair in which a P-type / N-type semiconductor is joined with a metal. The required voltage can be obtained by combining the required number of semiconductor pairs.

[0003]

According to the above-mentioned document,
The output voltage per semiconductor pair is as low as 50 mV with a maximum temperature difference of 100 degrees Celsius, and a high temperature difference, many semiconductor pairs, or both are required to obtain a practical output voltage. Further, a heat source that generates the temperature difference, such as a combustion gas, is required.

[0004]

The present invention focuses on the fact that the generated voltage is proportional to the number of semiconductor pairs, and demonstrates that the number can be dramatically increased by applying semiconductor integrated circuit technology. Discover and apply it to thermoelectric generators.

[0005]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A large number of semiconductor pairs are formed on a semiconductor chip by a fine processing technique of a semiconductor integrated circuit, and heating and heat radiating means are provided at both ends of the semiconductor pair.

[0006]

FIG. 1 is a schematic diagram of an embodiment. 8: A 5: P-type semiconductor and a 7: N-type semiconductor are formed on an intrinsic semiconductor by diffusion or the like, and a semiconductor pair connected in series by aluminum deposition wiring or the like is configured as shown in the figure. 3: heat conduction bands A and 9: heat conduction band B heat or absorb heat at both ends of the semiconductor pair, respectively, and 2: heat conduction metal A and 12: heat conduction metal B by bonding wires. 6: Heat is conducted to the outside of the package. For example, if the heat conduction metal A is kept at a high temperature and the heat conduction metal B is kept at a low tone, the heat conduction band 3 stays on the high temperature side and the heat conduction band B stays on the low temperature side due to heat conduction. Causes a temperature difference between both ends of the semiconductor pair. Therefore, a DC voltage is generated between the 11: electrode A and the 13: electrode B with the 11: electrode A being positive.
FIG. 2 is an external view of the embodiment. In addition to the package, application to a tape carrier, a chip carrier, and the like can be easily considered. Here, considering the number of semiconductor pairs, it is no longer the latest technology.
One semiconductor pair can be formed with a width of 2 μm by a processing technique of 5 μm (1 μm is 1/1000 millimeter, hereinafter referred to as um), so if the width of the effective wiring area is, for example, 5 mm, the configuration of 2500 semiconductor pairs Becomes possible. This is a Peltier device with the same configuration,
Thermo modules used for cooling semiconductor elements, for example, 6300.127.060AM of Sengoku Densho Co., Ltd.
(127 pairs, size is 39.6x39.6x4.1
The number of pairs is about 20 times as large as (6, unit mm). Assuming that the power generation capacity of the semiconductor pair is the same, a voltage of the same magnitude can be output with a temperature difference of about 1/20.

[0007]

According to the present invention, it is possible to provide a thermoelectric power generation element capable of generating power even at a low temperature difference, and to be put in a package, so that the field of application is widened. Radios and radios driven by the electric power are very useful without any danger such as running out of batteries. In addition, since power can be generated at a low temperature difference, it is possible to generate power at a temperature difference between, for example, the surface of seawater and an appropriate depth. For high power, a power module such as a module combining elements or a DC-DC converter is used. This can be handled by using a converter. Waste heat from refuse incineration plants and thermal power plants can also be used for power generation in the same way, and can contribute to the maintenance of the global environment.

[Brief description of the drawings]

FIG. 1 is a schematic diagram of an embodiment of the present invention.

FIG. 2 is an external view of the embodiment.

[Explanation of symbols]

1 heat conduction metal A 2 bonding wire 3 heat conduction band A 4 aluminum wiring 5P type semiconductor 6 package 7N type semiconductor 8 intrinsic semiconductor chip 9 heat conduction band B 10 electrode pad 11 electrode A 12 heat conduction metal B 13 electrode B

Claims (1)

[Claims] A P-type semiconductor and an N-type semiconductor are alternately arranged on an intrinsic semiconductor or a sapphire substrate, and both ends thereof are connected to adjacent P-type and N-type semiconductors, respectively. A semiconductor device having a configuration in which N-type semiconductors are alternately and serially connected, and having means for applying a temperature difference to both ends of the P-type and N-type semiconductors.